CN105914253A - Polarization controllable nanometer light source and microscopic system thereof, and photon chip system - Google Patents
Polarization controllable nanometer light source and microscopic system thereof, and photon chip system Download PDFInfo
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- CN105914253A CN105914253A CN201610212532.0A CN201610212532A CN105914253A CN 105914253 A CN105914253 A CN 105914253A CN 201610212532 A CN201610212532 A CN 201610212532A CN 105914253 A CN105914253 A CN 105914253A
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- 230000010287 polarization Effects 0.000 title claims abstract description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000002356 single layer Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000013307 optical fiber Substances 0.000 claims abstract description 10
- 230000005540 biological transmission Effects 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000002127 nanobelt Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000033228 biological regulation Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
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- 238000001914 filtration Methods 0.000 claims description 2
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- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
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- 150000001336 alkenes Chemical class 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a polarization controllable nanometer light source, comprising a substrate, a single layer grapheme arranged on the substrate, a first electrode and a second electrode which are respectively arranged on the rim of the graphene and the substrate, a semiconductor nanometer band placed on the single layer graphene, an optical fiber which introduces exciting light to irradiate one end of the semiconductor nanometer band, wherein the optical signal is outputted from the other end of the semiconductor nanometer band, and an external signal source for changing application voltage between the first electrode and the second electrode in order to regulate and control the output light polarization. The invention also discloses the microscopic system having the polarization controllable nanometer light source and the photon chip system. The invention provides a miniaturization and integration polarization controllable nanometer light source, which regulates the graphene Fermi energy level through the electric signal, changes the support state on the transmission light and thus realizes the polarization control on the semiconductor nanometer light source.
Description
Technical field
The present invention relates to micronano optical and integrated optics field, especially relate to a kind of polarization controllable nano
Light source and microscopic system, photon chip system.
Background technology
Along with the development of microelectric technique progressively reaches its physics limit, photon technology becomes Information technology
New breakthrough point.The miniaturization of photonic device and integrated be the important development direction in this field at present.
The miniaturization relative maturity of passive photonic device, and the miniaturization of active device especially light source is with integrated
Change is main bugbear, and this also becomes the problem of focus of international research.Semiconductor nano-strip/line is a kind of
Very good nanometers light, optic communication on sheet, super-resolution sensing micro-, highly sensitive and high score rate
The aspects such as display have important application.Although, semiconductor nano-strip/line source is the most in the world by success
Realizing, but it also has the biggest distance with actual application, main restricting factor is sending out of these nanometers light
Light characteristic is difficult to regulation and control such as polarization, wavelength, pattern, intensity etc..
Graphene, can be with traditional integrated circuit process compatible as a kind of New Two Dimensional material, and easily
In miniaturization.The more important thing is, the physical property of Graphene uniqueness makes it can support specifically to polarize
Light is transmitted, and provides new method for realizing Polarization Control.At present, Graphene has been used to realize
The patent of Polarization Control and research report, but these methods are all to be combined with waveguiding structure by Graphene,
Change the polarization state transmitting light in waveguide.And the direct regulation and control to light source luminescent polarization could not be realized.
Meanwhile, these existing Graphene wave-guide polarizations control device and are both near infrared light (wavelength is more than
1000nm), also not used for the Polarization Control device of visible ray, and these devices are at display, one-tenth
There is important application in the fields such as picture, sensing.Polarize if Graphene can be used to realize visible light source luminescence
Direct regulation and control will assist in the realization of Parameter adjustable nanometers light and miniaturization thereof, integrated.
Summary of the invention
It is an object of the invention to provide a kind of polarization using Graphene direct regulation and control visible ray controlled
Nanometers light, utilize applied electronic signal regulate Graphene fermi level, change Graphene to TE TM inclined
Shake the status of support of light, and the luminous polarization finally realizing nanometers light can be between TE/TM two states
Switching.
The concrete technical scheme of the present invention is as follows:
A kind of polarization controllable nano light source, including substrate be positioned at suprabasil single-layer graphene；Respectively
It is arranged on graphene edge and suprabasil first electrode and the second electrode；It is placed on single-layer graphene
Semiconductor nano-strip；Introduce the optical fiber of semiconductor nano-strip one end described in excitation light irradiation, and in institute
State semiconductor nano-strip other end output optical signal；And for changing between the first electrode and the second electrode
Apply the voltage external signal source with regulation and control output light polarization.
In the present invention, use stripping method to prepare single-layer graphene material, and transfer in substrate；At stone
Difference depositing electrode on ink alkene edge and substrate；Partly led by chemical gaseous phase deposition (CVD) method preparation
Body nano belt, uses micro-nano operation that single nano belt is transferred to above-mentioned substrate, and is placed on monolayer stone
On ink alkene；Use optical fiber that external excitation light is radiated at semiconductor nano-strip one end；Semiconductor nano-strip
The luminescence of the other end uses as polarized light.
It addition, in the polarization controllable nano light source of the present invention, due to semiconductor nano-strip self banding
Construction features so that it is intrinsic luminescence presents different polarization state more.When system no applied voltage or voltage
Not up to during some strength, Graphene fermi level is near dirac point, only supports TE polarized light
Transmission, TM polarized light decayed in a large number, and now nano belt light source luminescent presents TE polarization；When
When applying certain voltage between two electrodes, the fermi level of Graphene is changed, and only supports TM polarized light
Transmission, TE polarized light decayed in a large number, and now nano belt light source luminescent presents TM polarization.Therefore,
Alive size can be executed by change and realize the nanometers light that polarization is controlled.
Wherein, described semiconductor nano carrying material is Group II-VI semiconductor material, and thickness is 80nm
To 120nm, emission wavelength is at visible light wave range.
In the present invention, the light source of described exciting light can be that 355nm, 405nm, 532nm etc. are continuous
Or pulse laser.
Described electrode is the conductive materials such as platinum, gold, silver, copper, aluminum, titanium, nickel, cobalt, palladium.
Described substrate is silicon oxide layer deposited or silicon nitride layer on silicon materials.
Further, polarization controllable nano light source of the present invention can use based on microscopic system,
Can also use based on integrated photon chip, specifically include:
A kind of microscopic system with above-mentioned polarization controllable nano light source, in conjunction with described in polarization controlled receive
Meter Guang Yuan, also includes:
Laser instrument, sends the exciting light being coupled into described optical fiber；
Microcobjective, for being collected described output light；
Optical filter, for filtering the part exciting light collected.
In the microscopic system of the present invention, collected the output light of nano belt by microcobjective.
Wherein, described microscopic system also include being positioned at the analyzer on optical filter emitting light path and for
Polarization state detection light detection device, wherein light detection device can be spectrogrph, light power meter or
Photo-detector etc..
A kind of photon chip system with above-mentioned polarization controllable nano light source, in conjunction with described in polarization can
Control nanometers light, also includes: waveguide coupling grating or waveguide coupler, is positioned at described quasiconductor and receives
Rice band end and be used for transmit described output light；Passive photonic device, is used for receiving described waveguide
Coupling grating or the output light of waveguide coupler transmission.
In integrated photon chip system in the present invention, by waveguide coupling grating or waveguide evanscent field
Semiconductor nano-strip is exported light and introduces in photonic device by the modes such as coupling.
The present invention provides a kind of brand-new Miniaturizable, integrated polarization controllable nano light source, passes through
Signal of telecommunication regulation Graphene fermi level, changes its status of support to transmission light, thus realizes half-and-half
The regulation and control of conductor nanometers light output polarization.
Accompanying drawing explanation
Fig. 1 is the polarization controllable nano light source device schematic diagram designed by the present invention；Wherein, 1 for using
In the optical fiber of introducing exciting light, 2 is semiconductor nano-strip, and 3 is single-layer graphene, and 4 is deposited oxide
Silicon layer or silicon nitride layer, 5 is silicon base, and 6 is electrode, and 7 is the electrode on Graphene, and 8 is nanometer
Light source output optical signal, 9 is external signal source；
Fig. 2 is the polarization controllable nano light source microscopic system figure designed by the present invention；Wherein, 10 is filter
Mating plate, 11 is analyzer, and 12 is light detection device, and 13 is laser instrument, and 14 is microcobjective.
Fig. 3 is the polarization controllable nano light source monolithic collection based on waveguide optical grating coupling designed by the present invention
Become photon chip；Wherein, 15 is silicon base, and 16 is the silicon nitride layer of deposition, and 17 is wave of silicon nitride
Leading coupling grating, 18 is passive photonic device.
Fig. 4 is the polarization controllable nano light source monolithic based on evanscent field waveguide coupling designed by the present invention
Integrated photon chip；Wherein, 19 is silicon nitride waveguides bonder.
Detailed description of the invention
The polarization controllable nano light source of structure as shown in Figure 1, including the optical fiber 1 for introducing exciting light,
Semiconductor nano-strip 2, single-layer graphene 3, silicon oxide layer deposited or silicon nitride layer 4, silicon base 5,
Electrode 6, the electrode 7 on Graphene, nanometers light output optical signal 8 and external signal source 9.
In the present embodiment, semiconductor nano-strip 2 is CdSe nano belt, and concrete employing chemical gaseous phase is sunk
Long-pending (CVD) method grows CdSe nano belt under the conditions of specified temp, air pressure, air-flow etc., and right
Its optical property characterizes, as the active material of Graphene Polarization Control nanometers light.
Use stripping method to prepare single-layer graphene, and transfer to deposit silica layer or silicon nitride layer
In silicon base；Or use CVD method directly in deposition silica layer or the silicon base of silicon nitride layer
Upper growth single-layer graphene.
Use focused-ion-beam lithography (FIB) depositing electrode or adopt on the silicon layer of Graphene and substrate
Electrode is prepared with the method conductive silver paste of micro-nano operation.Electrode can be platinum, gold, silver, copper, aluminum,
The conductive materials such as titanium, nickel, cobalt, palladium.By micro-nano operation, single semiconductor nano-strip is transferred to list
On layer graphene.Operating process is it is ensured that nano belt stands intact.
As in figure 2 it is shown, the exciting light that laser instrument 13 sends to be coupled to optical fiber, and by micro-dress
Put the hot spot adjusting optical fiber output so that it is irradiation is in one end of nano belt.
Semiconductor nano-strip at the irradiating luminescence of exciting light, use high x Microscope Objective 14 (100 times or
50 times) nano belt the other end to output light be collected detection.Output light is after object lens, logical
Cross the part exciting light that object lens are collected by optical filter 10 to filter, and enter light by analyzer 11 and visit
Survey device 12 and carry out the detection of polarization state, maybe output light is introduced external circuits system.Wherein light
Detection device can be spectrogrph, light power meter or photo-detector etc..
In the present embodiment, between device two electrode, apply the signal of telecommunication by outside source, regulate and control graphite
The fermi level of alkene.When signal source output voltage is 0 or less than particular voltage level VthTime, Graphene
Only support that TE polarized light is propagated, now light source output TE polarized light；When signal source output voltage is high
In particular voltage level VthTime, Graphene only supports that TM polarized light is propagated, now light source output TM
Polarized light.By changing the voltage of external control signal, Graphene Polarization Control nanometer light can be realized
Source.
The polarization controllable nano light source of the present invention both can be as polarized fluorescence light source, it is also possible to as partially
Shake LASER Light Source.This depends on the selection of exciting light.
It is integrated that the nanometers light of the present embodiment can realize with photon chip, selects based on silicon nitride material
Visible ray can be transmitted and process by the photon chip of material.As shown in Figure 3 and Figure 4, at photon
In chip, waveguide is utilized to carry out evanscent field coupling (silicon nitride waveguides bonder 19) or by waveguide coupling
Close grating (silicon nitride waveguides coupling grating 17) to couple, by Graphene Polarization Control nanometers light
Output light imports in other passive photonic devices 18 (such as resonator cavity, waveguide beam splitter etc.) in chip.
Meanwhile, light can be realized in conjunction with CMOS integrated circuit technique and be electrically integrated chip, at visible light communication
And there is important application prospect in display field.
The foregoing is only the preferable implementation example of the present invention, be not limited to the present invention, all at this
Within spirit and principle, any modification, equivalent substitution and improvement etc. made, should be included in
Within protection scope of the present invention.
Claims (7)
1. a polarization controllable nano light source, it is characterised in that including:
Substrate；
It is positioned at suprabasil single-layer graphene；
It is separately positioned on graphene edge and suprabasil first electrode and the second electrode；
The semiconductor nano-strip being placed on single-layer graphene；
Introduce the optical fiber of semiconductor nano-strip one end described in excitation light irradiation, and at described semiconductor nano
Band other end output optical signal；
And apply voltage between the first electrode and the second electrode with regulation and control output light polarization for changing
External signal source.
2. polarization controllable nano light source as claimed in claim 1, it is characterised in that described partly leads
Body nano belt uses Group II-VI semiconductor material, and thickness is 80nm to 120nm.
3. polarization controllable nano light source as claimed in claim 1, it is characterised in that two electrodes
Material is platinum, gold, silver, copper, aluminum, titanium, nickel, cobalt or palladium.
4. polarization controllable nano light source as claimed in claim 1, it is characterised in that described substrate
For deposition silica layer or the silicon materials of silicon nitride layer.
5. one kind has the micro-system polarizing controllable nano light source as described in any one of Claims 1 to 4
System, it is characterised in that also include:
Laser instrument, sends the exciting light being coupled into described optical fiber；
Microcobjective, for being collected described output light；
Optical filter, for filtering the part exciting light collected.
6. microscopic system as claimed in claim 5, it is characterised in that described microscopic system is also wrapped
Include the analyzer being positioned on optical filter emitting light path and the light detection device for polarization state detection.
7. one kind has the photon chip polarizing controllable nano light source as described in any one of Claims 1 to 4
System, it is characterised in that also include:
Waveguide coupling grating or waveguide coupler, be positioned at described semiconductor nano-strip end and for
Output light described in transmission；
Passive photonic device, defeated for receive described waveguide coupling grating or waveguide coupler to transmit
Go out light.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785292A (en) * | 2016-12-28 | 2017-05-31 | 中国计量大学 | Based on graphene film structure Terahertz wave coupler |
| CN110133799A (en) * | 2019-04-23 | 2019-08-16 | 天津大学 | The integrated polarization photo-coupler and preparation method thereof of waveguide based on graphene |
| CN112433082A (en) * | 2020-10-30 | 2021-03-02 | 国网山东省电力公司青岛供电公司 | Optical fiber voltage measuring system and method |
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| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103105644A (en) * | 2013-01-16 | 2013-05-15 | 浙江大学 | Metal nanowire surface plasma modulator based on grapheme two-dimension material |
| CN104730738A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Polarization controller based on graphene |
| CN105140314A (en) * | 2015-08-10 | 2015-12-09 | 上海交通大学 | Micro-nanofiber structure based wide-spectrum graphene photoconductive detector |
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2016
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| CN102882125A (en) * | 2012-09-19 | 2013-01-16 | 浙江大学 | Method for continuously and linearly adjusting output laser polarization direction of semiconductor nanowire |
| CN103105644A (en) * | 2013-01-16 | 2013-05-15 | 浙江大学 | Metal nanowire surface plasma modulator based on grapheme two-dimension material |
| CN104730738A (en) * | 2015-03-10 | 2015-06-24 | 电子科技大学 | Polarization controller based on graphene |
| CN105140314A (en) * | 2015-08-10 | 2015-12-09 | 上海交通大学 | Micro-nanofiber structure based wide-spectrum graphene photoconductive detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106785292A (en) * | 2016-12-28 | 2017-05-31 | 中国计量大学 | Based on graphene film structure Terahertz wave coupler |
| CN110133799A (en) * | 2019-04-23 | 2019-08-16 | 天津大学 | The integrated polarization photo-coupler and preparation method thereof of waveguide based on graphene |
| CN110133799B (en) * | 2019-04-23 | 2021-04-06 | 天津大学 | Waveguide integrated polarized light coupler based on graphene and manufacturing method thereof |
| CN112433082A (en) * | 2020-10-30 | 2021-03-02 | 国网山东省电力公司青岛供电公司 | Optical fiber voltage measuring system and method |
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| CN105914253B (en) | 2017-09-12 |
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