CN104730738A - Polarization controller based on graphene - Google Patents
Polarization controller based on graphene Download PDFInfo
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- CN104730738A CN104730738A CN201410824188.1A CN201410824188A CN104730738A CN 104730738 A CN104730738 A CN 104730738A CN 201410824188 A CN201410824188 A CN 201410824188A CN 104730738 A CN104730738 A CN 104730738A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a polarization controller based on graphene, and relates to the technical field of photoelectronics. The polarization controller is based on a traditional silicon (SOI) structure on an insulator substrate and comprises a waveguide with the graphene, a vertically embedded graphene layer is arranged on one segment in the waveguide, a horizontally embedded graphene layer is arranged on the other segment of the waveguide, and graphene in the two waveguide segments is connected through two independent electrodes. Absorption of the two waveguide segments on a TM mode (transverse magnetic mode) and a TE mode (transverse electric mode) is regulated and controlled through driving voltage applied to the graphene layers, and therefore selective output on the TE mode and the TM mode is achieved. The polarization controller has the advantages of being small in size, high in extinction ratio, small in inserting loss, high in response speed, wide in work wavelength range and capable of being integrated, and has the important application prospect in optoelectronic integration in the future.
Description
Technical field
The present invention relates to photoelectron technical field, be specifically related to a kind of Polarization Controller based on Graphene, realize exporting the selectivity of TE mould and TM mould.
Background technology
The advantages such as optical fiber communication has series of advantages, and as low in loss, bandwidth, capacity are large solve the crowded the only way of current data service explosive growth, communication road.But when the single-channel transfer rate of optical fiber telecommunications system reaches 10Gbit/s or is higher, the infringement that whole system will produce polarization effect is very responsive, and these infringements comprise the polarization associated modulation etc. in the polarization mode dispersion of optical fiber, the Polarization Dependent Loss of Passive Optical Components, the Polarization-Dependent Gain of image intensifer and photomodulator.These infringements more and more become the bottleneck of fibre system to more high speed development, and to overcome one of this problem method be exactly adopt Polarization Controller to carry out Polarization Control.And Polarization Controller also has application in fields such as coherent light communication, Fibre Optical Sensor and optical fiber measurements, become the Primary Component overcoming Polarization Dependent Loss and monitoring polarization characteristic in optical transmission system at present.
Current existing polarization Polarization Controller mainly comprises the rotary-type and electrooptical modulation type of optical-fiber squeezing type, wave plate.Wherein the Polarization Control of optical-fiber squeezing type applies the external force of different directions to optical fiber mainly through devices such as piezoelectric ceramics, thus generation stress birefrin effect changes polarization state, relatively simple for structure, but there is the factors such as physics fatigue, so unstable properties, can not realize accurately controlling; Wave plate is rotary-type is half-wave plate by more than three and quarter-wave plate cascade, and with major axes orientation that is manual or automatically controlled mode rotating wave plate, to introduce birefringence in different directions, thus reach the object of Polarization Control, this method is more accurate relative to optical-fiber squeezing type, but this method is rotated by the machinery of wave plate, and its response speed is slower; Electrooptical modulation type utilizes the electrooptical effect of crystal introduce the birefringence of different directions thus control polarization state; this class methods control accuracy is higher, speed, but due to the relatively weak electrooptical effect of crystal; usually the size based on the Polarization Controller of electrooptical modulation type is comparatively large, is not easy to integrated.
Graphene is a kind of favose two-dimentional lonsdaleite structured material, relatively large absorption is had (see document Dawlaty J M to the spectrum from ultraviolet light to infrared light, Shivaraman S, Strait J, et al. Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible. Applied Physics Letters, 2008, Vol.93), be extensively studied its application in optoelectronic device, be included in photomodulator, the application of polarizer aspect is (see document Bao Q, Zhang H, Wang B, Ni Z, et al. Broadband graphene polarizer. Nature Photonics, 2011, Vol.5 and document Liu M, Yin X, Ulin-Avila E, et al. A graphene-based broadband optical modulator. Nature, 2011, Vol.474).
Application number is the regulating device of a kind of optical fiber polarization controller of CN201210442437.1, at least comprises: optical fiber polarization controller, marking thumb wheel, exterior panel and base support; Described optical fiber polarization controller at least has an optical fiber ring plate, and an optical fiber ring plate is equipped with a marking thumb wheel; Described marking thumb wheel is annulus wheel-like structure, the optical fiber ring plate of optical fiber polarization controller is positioned at marking thumb wheel, the optical fiber ring plate place plane of optical fiber polarization controller and marking thumb wheel place plane being perpendicular, marking thumb wheel and optical fiber polarization controller optical fiber ring plate interfix, rotating marking thumb wheel can drive optical fiber ring plate to rotate, and the rotation of marking thumb wheel keeps overlapping with the rotation of optical fiber polarization controller optical fiber ring plate; Outer edge surface or the side of marking thumb wheel indicate scale, and scale unit is angular unit or long measure, in order to demarcate the anglec of rotation or the swing offset of optical fiber ring plate; Described exterior panel has rectangular window, and the part outer rim of marking thumb wheel is exposed from the rectangular window of exterior panel, is convenient to regulate optical fiber ring plate from exterior panel outside; Exterior panel is carved with optical fiber ring plate near the appropriate location at rectangular window edge and rotates reading mark, be convenient to the anglec of rotation or the swing offset of determining optical fiber ring plate; Described base support is used for fixing whole regulating device, keeps the position relationship between each parts in regulating device.
Above-mentioned optical fiber polarization controller, that the mode of manually spin fiber ring plate obtains different optical polarizations, exist following not enough in actual applications: (1) optical fiber polarization controller is because do not have can the scale marker of reference, can only regulate with feeling during spin fiber ring plate, regulate poor efficiency during polarization state before repeating, be difficult to all optical fiber ring plates to recall to original position simultaneously; (2) place optical fiber polarization controller for a long time, its optical fiber ring plate (in an inclined state) can slowly depart from original position at Action of Gravity Field; (3) optical fiber polarization controller manually reverses the angle regulating optical fiber ring plate, is unsuitable for directly carrying out erecting of panel.
Summary of the invention
For above-mentioned prior art, the object of the present invention is to provide a kind of Polarization Controller based on Graphene, the technical matters being intended to solve is: the rotary-type Polarization Controller of existing wave plate is rotated by the machinery of wave plate, and its response speed is slower; And the size of the Polarization Controller of electrooptical modulation type is comparatively large, be not easy to integrated.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of Polarization Controller based on Graphene, it is characterized in that, comprise semiconductor substrate layer, insulation course, graphene layer, spacer medium layer, electrode and waveguide, described insulation course is positioned on semiconductor substrate layer, electrode is positioned at the both sides on insulation course, waveguide to be placed on insulation course and to be positioned at center, described electrode comprises the first electrode, second electrode, 3rd electrode and the 4th electrode, described waveguide comprises first paragraph waveguide, second segment waveguide, 3rd section of waveguide, 4th section of waveguide, graphene layer comprises the first graphene layer, second graphene layer, 3rd graphene layer, 4th graphene layer, described spacer medium layer comprises the first spacer medium layer, second spacer medium layer, 3rd spacer medium layer, 4th spacer medium layer, 5th spacer medium layer and the 6th spacer medium layer, described first graphene layer, the second graphene layer parallel, horizontal embed in waveguide, and the first graphene layer is isolated by the second spacer medium layer and the 3rd spacer medium layer, and the second graphene layer is isolated by the first spacer medium layer, the second spacer medium layer, 3rd graphene layer, the 4th graphene layer are vertical respectively to be embedded in waveguide, and the 3rd graphene layer is isolated by the 4th spacer medium layer, the 5th spacer medium layer, and the 4th graphene layer is isolated by the 5th spacer medium layer and the 6th spacer medium layer,
First graphene layer, the second graphene layer extend out from two of waveguide sides respectively and connect described first electrode and the 3rd electrode; Connection second electrode and the 4th electrode is extended respectively to both sides after 3rd graphene layer, the 4th graphene layer extend out from the upper surface of waveguide.
In the present invention, also comprise the first filled media layer and the second filled media layer, described 3rd graphene layer, the 4th graphene layer (44) are positioned on the first filled media layer and the second filled media layer to the part that both sides extend.
In the present invention, the described all or part of overlap of first and second graphene layer in the waveguide, all or part of overlap of third and fourth graphene layer in the waveguide.
In the present invention, the material of described semiconductor substrate layer and waveguide is silicon, germanium, germanium-silicon alloy, one of Group III-V semiconductor or II-IV race semiconductor.
In the present invention, described insulation course, spacer medium layer and the first filled media layer, the second filled media layer material are semiconductor oxide materials, as Si oxide, silicon oxides of nitrogen, boron nitride or six side's boron nitrides.
In the present invention, described first electrode, the 3rd electrode, one of them ground connection, another connects positive electrode; Described second electrode, the 4th electrode, one of them ground connection, another connects positive electrode; First to fourth electrode material is metal, as gold, silver, copper, platinum, aluminium, titanium, nickel, cobalt or palladium.
Principle of work of the present invention is:
Polarization Controller provided by the invention is based on traditional silicon-on-insulator (SOI) structure, comprise the waveguide with Graphene, one section is wherein had to have the vertical graphene layer embedded in waveguide, other one section of graphene layer having level and embed, the Graphene in two sections of waveguides is respectively by two independently Electrode connection.Carried out the optical conductivity of tuning Graphene by bias voltage, thus control the change of waveguide effective index.The effective refractive index of waveguide comprises real part and imaginary part, and real part can affect the phase information of light signal, and imaginary part corresponds to the absorption of light.Apply suitable voltage, effectively can control the absorption of waveguide to TM mould there is level embedding in the waveguide of Graphene, and almost transparent to TE mould, thus can filtering TM mould, export TE mould; Effectively can control the absorption of waveguide to TE mould having vertical embedding in the waveguide of Graphene, and almost transparent to TM mould, thus can filtering TE mould, export TM mould.Like this, regulate and control two sections of waveguides respectively to the absorption of TM and TE mould by the driving voltage being applied to graphene layer, thus realize exporting the selectivity of TE and TM mould.Graphene has relatively large light absorption to the spectrum from ultraviolet light to infrared light, and does not have traditional Si Influence of Carriers, and the electron mobility of self quickly, thus can realize the TE-TM mould Polarization Controller of small size, wide spectral, two-forty.
Compared with prior art, the present invention has following beneficial effect:
One, waveguide is set in the center of insulator substrate, one section is wherein had to have the vertical graphene layer embedded in waveguide, other one section of graphene layer that there is level and embed, Graphene in two sections of waveguides is respectively by two independently Electrode connection, regulate and control the absorption of two sections of waveguides to TM transverse magnetic wave and TE transverse electric mode mould respectively by the driving voltage being applied to graphene layer, thus realize exporting the selectivity of TE and TM mould;
Two, to have size little in the present invention, and extinction ratio is high, and insertion loss is little, fast response time, and operating wavelength range is wide, compatible with CMOS technology, is easy to integrated advantage.
Accompanying drawing explanation
Fig. 1 is the perspective view of the Polarization Controller based on Graphene provided by the invention;
Fig. 2 is the right TV structure schematic diagram of the Polarization Controller based on Graphene provided by the invention;
Fig. 3 is the left TV structure schematic diagram of the Polarization Controller based on Graphene provided by the invention;
Fig. 4 is that in the embodiment of the present invention, lambda1-wavelength is 1.55 μm and embeds in level the absorption coefficient of light figure that TE mould and TM mould in Graphene waveguide change along with the change of the chemical potential energy of Graphene;
Fig. 5 be in the embodiment of the present invention lambda1-wavelength be 1.55 μm at the vertical absorption coefficient of light figure embedding TE mould and TM mould in Graphene waveguide and change along with the change of the chemical potential energy of Graphene;
Fig. 6 is that when exporting TE mode light based on the Polarization Controller selection of Graphene in the embodiment of the present invention, TE, TM mould is along with the normalization Output optical power of transmission range;
Fig. 7 is that when exporting TM mode light based on the Polarization Controller selection of Graphene in the embodiment of the present invention, TE, TM mould is along with the normalization Output optical power of transmission range;
Reference numeral is:
1-semiconductor substrate layer, 2-insulation course, 3-waveguide, the waveguide of 31-first paragraph, the waveguide of 32-second segment, 33-the 3rd section of waveguide, 34-the 4th section of waveguide, 41-first graphene layer, 42-second graphene layer, 43-the 3rd graphene layer, 44-the 4th graphene layer, 51-first electrode, 52-second electrode, 53-the 3rd electrode, 54-the 4th electrode, 61-first spacer medium layer, 62-second spacer medium layer, 63-the 3rd spacer medium layer, 64-the 4th spacer medium layer, 65-the 5th spacer medium layer, 66-the 6th spacer medium layer, 71-first filled media layer, 72-second filled media layer.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
Embodiment
Structural representation as described in Figure 1, a kind of Polarization Controller based on Graphene, comprises insulation course 2, is positioned on semiconductor substrate layer 1, and waveguide 3 comprises first paragraph waveguide 31, second segment waveguide 32, the 3rd section of waveguide 33, the 4th section of waveguide 34; First graphene layer 41, second graphene layer 42 respectively level embeds in waveguide 3, and is isolated by the first spacer medium layer 61, second spacer medium layer 62 and the 3rd spacer medium layer 63 successively; 3rd graphene layer 43, the 4th graphene layer 44 are vertical respectively to be embedded in waveguide 3, and is isolated by the 4th spacer medium layer 64, the 5th spacer medium layer 65 and the 6th spacer medium layer 66 successively; First graphene layer 41, second graphene layer 42 extends out from two of waveguide 3 sides connection first electrode and the 3rd electrode 53 respectively; Connection second electrode 52 and the 4th electrode 54 is extended respectively to both sides after 3rd graphene layer 43, the 4th graphene layer 44 extend out from the upper surface of waveguide 3; 3rd graphene layer 43, the 4th graphene layer 44 are positioned on the first filled media layer 71 and the second filled media layer 72 to the part that both sides extend.
The wide of waveguide 3 is 0.4 μm, height is 0.34 μm, first to fourth graphene layer 41,42,43,44 length is 5 μm, the first to six spacer medium layer 61,62,63,64,65,66 material is hBN, waveguide 3 material is Si, and insulation course 20 and first and second filled media layer 71,72 material are SiO
2, first and second electrode 51,52 connects positive polarity, third and fourth electrode 53,54 ground connection, and the chemical potential of Graphene can be changed by impressed voltage, and wavelength is that the communication wavelengths of 1.55 μm substitutes into simulation calculation.
Fig. 4 to be lambda1-wavelength be 1.55 μm embed in level the absorption coefficient of light figure that TE mould and TM mould in Graphene waveguide change along with the change of the chemical potential energy of Graphene.Embed in Graphene waveguide in level, as Graphene chemical potential μ=0.405eV, TE and TM mode light in the waveguide loss is very little, almost loss-freely can pass through waveguide; As Graphene chemical potential μ=0.51eV, waveguide is very little to the absorption coefficient of TE mould, TE mode light almost can embed the waveguide of Graphene losslessly by level, and waveguide has the higher absorption coefficient of light to TM mould, thus the waveguide of level embedding Graphene can pass through bias voltage effective filtering TM mould, exports TE mould.
Fig. 5 is lambda1-wavelength is 1.55
μm embeds vertical the absorption coefficient of light figure that in Graphene waveguide, TE mould and TM mould change along with the change of the chemical potential energy of Graphene.Embed in Graphene waveguide, when Graphene chemical potential vertical
μduring=0.405eV, TE and TM mode light in the waveguide loss is very little, almost loss-freely can pass through waveguide; When Graphene chemical potential
μduring=0.51eV, waveguide is very little to the absorption coefficient of TM mould, TM mode light almost can losslessly by the vertical waveguide embedding Graphene, and waveguide has the higher absorption coefficient of light to TE mould, thus the waveguide vertically embedding Graphene by bias voltage effective filtering TE mould, can export TM mould.
When Fig. 6 is the Polarization Controller selection output TE mode light based on Graphene, TE, TM mould is along with the normalization Output optical power of transmission range.It is 0.51eV that first electrode 51 controls Graphene chemical potential, and the second electrode 52 controls the normalization Output optical power that Graphene chemical potential is 0.405eV, TE, TM mould changes along with transmission range, Extinction ratio
tE=10*log
10(P
tE/ P
tM)=25dB.
When Fig. 7 is the Polarization Controller selection output TM mode light based on Graphene, TE, TM mould is along with the decay pattern of transmission range.It is 0.405eV that first electrode 51 controls Graphene chemical potential, and the second electrode 52 controls the normalization Output optical power that Graphene chemical potential is 0.51eV, TE, TM mould changes along with transmission range, Extinction ratio
tM=10*log
10(P
tM/ P
tE)=25dB.
Claims (6)
1. based on a Polarization Controller for Graphene, it is characterized in that, comprise semiconductor substrate layer (1), insulation course (2), graphene layer, spacer medium layer, electrode and waveguide (3), described insulation course is positioned on semiconductor substrate layer, and electrode is positioned at the both sides on insulation course, and waveguide to be placed on insulation course and to be positioned at center, and described electrode comprises the first electrode (51), second electrode (52), 3rd electrode (53) and the 4th electrode (54), described waveguide (3) comprises first paragraph waveguide (31), second segment waveguide (32), 3rd section of waveguide (33), 4th section of waveguide (34), graphene layer comprises the first graphene layer (41), second graphene layer (42), 3rd graphene layer (43), 4th graphene layer (44), described spacer medium layer comprises the first spacer medium layer (61), second spacer medium layer (62), 3rd spacer medium layer (63), 4th spacer medium layer (64), 5th spacer medium layer (65) and the 6th spacer medium layer (66), described first graphene layer (41), the second graphene layer (42) parallel, horizontal embed in waveguide (3), first graphene layer (41) is by the second spacer medium layer (62) and the isolation of the 3rd spacer medium layer (63), and the second graphene layer (42) is by the first spacer medium layer (61), the second spacer medium layer isolation, 3rd graphene layer (43), the 4th graphene layer (44) vertically embed in waveguide (3) respectively, 3rd graphene layer (43) is by the 4th spacer medium layer (64), the 5th spacer medium layer (65) isolation, and the 4th graphene layer (44) is by the 5th spacer medium layer (65) and the isolation of the 6th spacer medium layer (66),
First graphene layer (41), the second graphene layer (42) extend out from two sides of waveguide (3) respectively and connect described first electrode (51) and the 3rd electrode (53); Connection second electrode (52) and the 4th electrode (54) is extended respectively to both sides after 3rd graphene layer (43), the 4th graphene layer (44) extend out from the upper surface of waveguide (3).
2. the Polarization Controller based on Graphene according to claim 1, it is characterized in that, also comprise the first filled media layer (71) and the second filled media layer (72), described 3rd graphene layer (43), the 4th graphene layer (44) are positioned on the first filled media layer (71) and the second filled media layer (72) to the part that both sides extend.
3. the Polarization Controller based on Graphene according to claim 1, it is characterized in that, described first and second graphene layer (41,42) all or part of overlap in waveguide (3), third and fourth graphene layer (43,44) all or part of overlap in waveguide (3).
4. the Polarization Controller based on Graphene according to claim 1, is characterized in that, the material of described semiconductor substrate layer (1) and waveguide (3) is silicon, germanium, germanium-silicon alloy, one of Group III-V semiconductor or II-IV race semiconductor.
5. the Polarization Controller based on Graphene according to claim 1-2, it is characterized in that, described insulation course (2), spacer medium layer and the first filled media layer, the second filled media layer material are semiconductor oxide materials, as Si oxide, silicon oxides of nitrogen, boron nitride or six side's boron nitrides.
6. the Polarization Controller based on Graphene according to claim 1, is characterized in that, described first electrode (51), the 3rd electrode (53), one of them ground connection, and another connects positive electrode; Described second electrode (52), the 4th electrode (54), one of them ground connection, another connects positive electrode; First to fourth electrode (51,52,53,54) material is metal, as gold, silver, copper, platinum, aluminium, titanium, nickel, cobalt or palladium.
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| CN201410824188.1A CN104730738A (en) | 2015-03-10 | 2015-03-10 | Polarization controller based on graphene |
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| CN201410824188.1A CN104730738A (en) | 2015-03-10 | 2015-03-10 | Polarization controller based on graphene |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914253A (en) * | 2016-04-07 | 2016-08-31 | 浙江大学 | Polarization controllable nanometer light source and microscopic system thereof, and photon chip system |
| CN105974510A (en) * | 2016-05-12 | 2016-09-28 | 上海理工大学 | Graphene based passive depolarizer and preparation method thereof |
| CN106209257A (en) * | 2016-07-14 | 2016-12-07 | 浙江大学 | A kind of high linearity method of microwave photon link based on the silica-based MZ Mach-Zehnder of dual-polarization |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN110133799A (en) * | 2019-04-23 | 2019-08-16 | 天津大学 | The integrated polarization photo-coupler and preparation method thereof of waveguide based on graphene |
| CN112880546A (en) * | 2021-01-11 | 2021-06-01 | 于孟今 | Device and system for monitoring optical fiber distortion |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1463378A (en) * | 2001-06-15 | 2003-12-24 | 内莫普蒂克公司 | Liquid crystal-based electrooptical device forming, in particular, switch |
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN104181707A (en) * | 2014-07-30 | 2014-12-03 | 电子科技大学 | Graphene-based polarization insensitive optical modulator |
-
2015
- 2015-03-10 CN CN201410824188.1A patent/CN104730738A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1463378A (en) * | 2001-06-15 | 2003-12-24 | 内莫普蒂克公司 | Liquid crystal-based electrooptical device forming, in particular, switch |
| CN103064200A (en) * | 2011-10-19 | 2013-04-24 | 三星电子株式会社 | Optical modulator including graphene |
| CN104181707A (en) * | 2014-07-30 | 2014-12-03 | 电子科技大学 | Graphene-based polarization insensitive optical modulator |
Non-Patent Citations (3)
| Title |
|---|
| KENG-TE LIN ET AL: "Silicon-based broadband antenna for high responsivity and polarization-insensitive photodetection at telecommunication wavelengths", 《NATURE COMMUNICATIONS》 * |
| KINAM KIM ET AL: "A role for graphene in silicon-based semiconductor devices", 《NATURE》 * |
| QIAOLIANG BAO ET AL: "Broadband graphene polarizer", 《NATURE PHOTONICS》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105914253A (en) * | 2016-04-07 | 2016-08-31 | 浙江大学 | Polarization controllable nanometer light source and microscopic system thereof, and photon chip system |
| CN105914253B (en) * | 2016-04-07 | 2017-09-12 | 浙江大学 | Polarize controllable nano light source and its microscopic system, photon chip system |
| CN105974510A (en) * | 2016-05-12 | 2016-09-28 | 上海理工大学 | Graphene based passive depolarizer and preparation method thereof |
| CN106209257A (en) * | 2016-07-14 | 2016-12-07 | 浙江大学 | A kind of high linearity method of microwave photon link based on the silica-based MZ Mach-Zehnder of dual-polarization |
| CN106547121A (en) * | 2017-01-19 | 2017-03-29 | 中南林业科技大学 | A kind of light polarization transducer based on Graphene |
| CN106547121B (en) * | 2017-01-19 | 2019-05-17 | 中南林业科技大学 | A kind of light polarization converter based on graphene |
| CN110133799A (en) * | 2019-04-23 | 2019-08-16 | 天津大学 | The integrated polarization photo-coupler and preparation method thereof of waveguide based on graphene |
| CN112880546A (en) * | 2021-01-11 | 2021-06-01 | 于孟今 | Device and system for monitoring optical fiber distortion |
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Application publication date: 20150624 |