CN106785292A - Based on graphene film structure Terahertz wave coupler - Google Patents
Based on graphene film structure Terahertz wave coupler Download PDFInfo
- Publication number
- CN106785292A CN106785292A CN201611234619.4A CN201611234619A CN106785292A CN 106785292 A CN106785292 A CN 106785292A CN 201611234619 A CN201611234619 A CN 201611234619A CN 106785292 A CN106785292 A CN 106785292A
- Authority
- CN
- China
- Prior art keywords
- graphene film
- rectangular
- curl
- length
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
Graphene film structure Terahertz wave coupler is based on the invention discloses one kind.It includes base basalis, silicon dioxide layer, the trapezoidal graphene film of curl, rectangular graphene film, zigzag graphene film, upper arc graphene film, arc lower graphene film, signal input part, the first signal output part, secondary signal output end；When without applying bias, terahertz signal is input into from signal input part, from the output of the first signal output part；When there is applying bias, terahertz signal is input into from signal input part, from the output of secondary signal output end.Change the outgoing route of THz wave by adjusting bias direct current supply voltage, realize routing function.The present invention has simple and compact for structure, and size is small, the advantages of design principle is simple.
Description
Technical field
The present invention relates to THz wave coupler, more particularly to one kind is based on the coupling of graphene film structure Terahertz wave
Device.
Background technology
Terahertz Technology is a kind of new technology that twentieth century grows up the end of the eighties.The unique frequency model of THz wave
Molecular vibration and the rotation spectrum for covering most macromolecular substances are enclosed (be located between microwave frequency band and optical frequencies), thus it is most
Macromolecular substances all have obvious fingerprint spectral property in Terahertz frequency range its absorption spectra, reflectance spectrum or emission spectra, this
Any is not available for microwave.Terahertz pulse light source has many unique properties compared with conventional light source, such as：Transient state
Property, broadband property, coherence, low energy etc., these features determine Terahertz Technology in many basic research fields, commercial Application
There is considerable application prospect in field, medical domain, the communications field and biological field.Therefore Terahertz Technology and too
The research of hertz device is increasingly becoming focus widely studied in world wide.
The development of Terahertz Technology and application in recent years persistently drives the demand to THz devices.Past 20
Nian Li, the research to THz devices is concentrated mainly in the generation and detection of Terahertz.As in Terahertz communication system
Primary Component, Terahertz coupler is increasingly received significant attention.THz wave coupler is a kind of input by different wave length
The device that the power output decay of THz wave is adjusted, in actual applications, adjustable THz wave coupler is Terahertz
One of essential device in communication system, it is therefore necessary to which design is a kind of simple and compact for structure, and size is small, design principle letter
The need for the adjustable THz wave coupler of list and function admirable is to meet following THz wave communication technology application.
The content of the invention
The present invention is in order to overcome prior art not enough, there is provided one kind is based on graphene film structure Terahertz wave coupler.
In order to achieve the above object, technical scheme is as follows：
Basalis, silicon dioxide layer, the trapezoidal Graphene of curl are included based on graphene film structure Terahertz wave coupler
Film, rectangular graphene film, zigzag graphene film, upper arc graphene film, arc lower graphene film, signal are defeated
Enter end, the first signal output part, secondary signal output end；The upper strata of basalis is silicon dioxide layer, the upper strata of silicon dioxide layer
It is covered with the trapezoidal graphene film of curl, rectangular graphene film, zigzag graphene film, upper arc graphene film, lower arc
Shape graphene film, left end and rectangular graphene film and the right-hand member of zigzag graphene film of the trapezoidal graphene film of curl
It is connected, the left end of rectangular graphene film is connected with the right-hand member of upper arc graphene film, the left end of zigzag graphene film
It is connected with arc lower graphene film, the left end of upper arc graphene film is provided with signal input part, arc lower graphene film
Left end be provided with secondary signal output end, the right-hand member of the trapezoidal graphene film of curl is provided with the first signal output part；Without additional
During bias, terahertz signal is input into from signal input part, from the output of the first signal output part.Basalis is distinguished with graphene film
When connecting the two poles of the earth of dc source, THz wave is input into from signal input part, from the output of secondary signal output end, realizes route work(
Energy.
The material of described basalis be P-type silicon material, length be 29~31 μm, width be 13~15 μm, thickness be 2~
4μm.The length of described silicon dioxide layer is 29~31 μm, and width is 13~15 μm, and thickness is 2~4 μm.Described curl ladder
Shape graphene film is made up of a curl right-angled trapezium graphene film with a horizontal rectangular graphene film, wherein curl
The upper bottom length of trapezoidal graphene film is 3~4 μm, and bottom length is 5~7 μm, is highly 4~6 μm, horizontal rectangular graphene
The length of film is 5~8 μm, and width is 3~4 μm.The length of described rectangular graphene film is 29~31 μm, and width is 13
~15 μm.Described zigzag graphene film respectively equidistantly distributes eight rectangular slots of shape size all same up and down, its
The total length (the overall spacing in length direction both sides of the edge of the unit, similarly hereinafter) of middle zigzag graphene film is 9~13 μm,
Overall width (the overall spacing in width both sides of the edge of the unit, similarly hereinafter) is 4~6 μm, the length of rectangular slot for 1~
1.5 μm, width is 1~1.5 μm, and spacing is 1~1.5 μm.Described upper arc graphene film and arc lower graphene film
Shape size all same, total length be 12~15 μm, overall width be 2~3 μm.
Brief description of the drawings：
Fig. 1 is the three dimensional structure diagram based on graphene film structure Terahertz wave coupler；
Fig. 2 is the vertical view based on graphene film structure Terahertz wave coupler；
Fig. 3 is the first signal output part output power curve；
Fig. 4 is secondary signal output end output power curve.
Specific embodiment
As shown in Fig. 1~2, based on graphene film structure Terahertz wave coupler include basalis 1, silicon dioxide layer 2,
The trapezoidal graphene film 3 of curl, rectangular graphene film 4, zigzag graphene film 5, upper arc graphene film 6, lower arc
Shape graphene film 7, signal input part 8, the first signal output part 9, secondary signal output end 10；The upper strata of basalis 1 is two
Silicon oxide layer 2, the upper strata of silicon dioxide layer 2 is covered with the trapezoidal graphene film 3 of curl, rectangular graphene film 4, zigzag graphite
Alkene film 5, upper arc graphene film 6, arc lower graphene film 7, left end and the rectangle stone of the trapezoidal graphene film 3 of curl
Black alkene film 4 is connected with the right-hand member of zigzag graphene film 5, and the left end of rectangular graphene film 4 is thin with upper arc Graphene
The right-hand member of film 6 is connected, and the left end of zigzag graphene film 5 is connected with arc lower graphene film 7, upper arc graphene film
6 left end is provided with signal input part 8, and the left end of arc lower graphene film 7 is provided with secondary signal output end 10, the trapezoidal stone of curl
The right-hand member of black alkene film 3 is provided with the first signal output part 9；When without applied voltage, terahertz signal is defeated from signal input part 8
Enter, exported from the first signal output part 9.When can load bias direct current supply voltage between basalis 1 and graphene film, terahertz
Hereby ripple is input into from signal input part 8, is exported from secondary signal output end 10, realizes routing function.
The material of described basalis 1 is P-type silicon material, and length is 29~31 μm, and width is 13~15 μm, and thickness is 2
~4 μm.The length of described silicon dioxide layer 2 is 29~31 μm, and width is 13~15 μm, and thickness is 2~4 μm.Described song
The trapezoidal graphene film 3 in side is made up of a curl right-angled trapezium graphene film with a horizontal rectangular graphene film, its
The upper bottom length of the middle trapezoidal graphene film of curl is 3~4 μm, and the side with horizontal rectangular graphene film is connected, curl ladder
The bottom length of shape graphene film is 5~7 μm, is highly 4~6 μm, and the length of horizontal rectangular graphene film is 5~8 μm,
Width is 3~4 μm.The length of described rectangular graphene film 4 is 29~31 μm, and width is 13~15 μm.Described sawtooth
Shape graphene film respectively equidistantly distributes eight rectangular slots of shape size all same about 5, wherein zigzag Graphene is thin
The total length of film is 9~13 μm, and overall width is 4~6 μm, and the length of rectangular slot is 1~1.5 μm, and width is 1~1.5 μm,
Away from being 1~1.5 μm.Described upper arc graphene film 6 and the shape size all same of arc lower graphene film 7, overall length
It is 12~15 μm to spend, and overall width is 2~3 μm.
Embodiment 1
Based on graphene film structure Terahertz wave coupler：
As shown in Fig. 1~2, based on graphene film structure Terahertz wave coupler include basalis 1, silicon dioxide layer 2,
The trapezoidal graphene film 3 of curl, rectangular graphene film 4, zigzag graphene film 5, upper arc graphene film 6, lower arc
Shape graphene film 7, signal input part 8, the first signal output part 9, secondary signal output end 10；The upper strata of basalis 1 is two
Silicon oxide layer 2, the upper strata of silicon dioxide layer 2 is covered with the trapezoidal graphene film 3 of curl, rectangular graphene film 4, zigzag graphite
Alkene film 5, upper arc graphene film 6, arc lower graphene film 7, left end and the rectangle stone of the trapezoidal graphene film 3 of curl
Black alkene film 4 is connected with the right-hand member of zigzag graphene film 5, and the left end of rectangular graphene film 4 is thin with upper arc Graphene
The right-hand member of film 6 is connected, and the left end of zigzag graphene film 5 is connected with arc lower graphene film 7, upper arc graphene film
6 left end is provided with signal input part 8, and the left end of arc lower graphene film 7 is provided with secondary signal output end 10, the trapezoidal stone of curl
The right-hand member of black alkene film 3 is provided with the first signal output part 9；Bias direct current power supply is connected between basalis 1 and each graphene film
The two poles of the earth, load bias direct current supply voltage.The parameter and material of each element are as follows：
The material of basalis is P-type silicon material, and length is 29 μm, and width is 13 μm, and thickness is 2 μm.Silicon dioxide layer
Length is 29 μm, and width is 13 μm, and thickness is 2 μm.The trapezoidal graphene film of curl is thin by a curl right-angled trapezium Graphene
Film and a horizontal rectangular graphene film composition, the wherein upper bottom length of curl right-angled trapezium graphene film is 3 μm, bottom
Length is 5 μm, is highly 4 μm, and the length of horizontal rectangular graphene film is 5 μm, and width is 3 μm.Rectangular graphene film
Length is 29 μm, and width is 13 μm.Zigzag graphene film respectively equidistantly distributes eight squares of shape size all same up and down
Shape is slotted, and wherein the total length of zigzag graphene film is 9 μm, and overall width is 4 μm, and the length of rectangular slot is 1 μm, width
It it is 1 μm, spacing is 1 μm.The shape size all same of upper arc graphene film and arc lower graphene film, total length is 12
μm, overall width is 2 μm.The property indices for being based on graphene film structure Terahertz wave coupler use COMSOL
Multiphysics softwares are tested, and Fig. 3 is the first signal output part output power curve, it can be seen that when being not powered on pressure,
THz wave power output in the range of 6.12THz~6.32THz is between 93%~96%；After making alive, in f=
During 6.216THz, THz wave power output is 6%；Fig. 4 is secondary signal output end output power curve, it can be seen that not
During making alive, the THz wave power output in the range of 6.12THz~6.32THz is between 1.7%~5.5%；After making alive,
In f=6.216THz, THz wave power output is 92%.To sum up it can be seen that, the THz wave for f=6.216THz
Signal, when being not powered on pressure, terahertz wave signal is exported from the first signal output part；After making alive, THz wave is from secondary signal
Output end is exported, and realizes routing function.
Claims (7)
1. it is a kind of to be based on graphene film structure Terahertz wave coupler, it is characterised in that including basalis (1), silicon dioxide layer
(2), the trapezoidal graphene film of curl (3), rectangular graphene film (4), zigzag graphene film (5), upper arc Graphene
Film (6), arc lower graphene film (7), signal input part (8), the first signal output part (9), secondary signal output end
(10)；The upper strata of basalis (1) is silicon dioxide layer (2), and the upper strata of silicon dioxide layer (2) is covered with the trapezoidal graphene film of curl
(3), rectangular graphene film (4), zigzag graphene film (5), upper arc graphene film (6), arc lower Graphene are thin
Film (7), left end and rectangular graphene film (4) and the right side of zigzag graphene film (5) of the trapezoidal graphene film of curl (3)
End is connected, and the left end of rectangular graphene film (4) is connected with the right-hand member of upper arc graphene film (6), and zigzag Graphene is thin
The left end of film (5) is connected with arc lower graphene film (7), and the left end of upper arc graphene film (6) is provided with signal input part
(8), the left end of arc lower graphene film (7) is provided with secondary signal output end (10), the right side of the trapezoidal graphene film of curl (3)
End is provided with the first signal output part (9)；When without applied voltage, terahertz signal is input into from signal input part (8), from the first letter
The output of number output end (9)；When basalis (1) loads bias direct current voltage and graphene film between, terahertz signal is from letter
Number input (8) input, from secondary signal output end (10) output.
2. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
Basalis (1) material be P-type silicon material, length be 29~31 μm, width be 13~15 μm, thickness be 2~4 μm.
3. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
Silicon dioxide layer (2) length be 29~31 μm, width be 13~15 μm, thickness be 2~4 μm.
4. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
The trapezoidal graphene film of curl (3) by the horizontal rectangular graphene film group of a curl right-angled trapezium graphene film and
Into wherein the upper bottom length of the trapezoidal graphene film of curl is 3~4 μm, and bottom length is 5~7 μm, is highly 4~6 μm, horizontal
It it is 5~8 μm to the length of rectangular graphene film, width is 3~4 μm.
5. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
Rectangular graphene film (4) length be 29~31 μm, width be 13~15 μm.
6. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
Zigzag graphene film (5) respectively equidistantly distribute eight rectangular slots of shape size all same, wherein zigzag up and down
The total length of graphene film is 9~13 μm, and overall width is 4~6 μm, and the length of rectangular slot is 1~1.5 μm, width is 1~
1.5 μm, spacing is 1~1.5 μm.
7. it is according to claim 1 a kind of based on graphene film structure Terahertz wave coupler, it is characterised in that described
Upper arc graphene film (6) and arc lower graphene film (7) shape size all same, total length be 12~15 μm,
Overall width is 2~3 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234619.4A CN106785292A (en) | 2016-12-28 | 2016-12-28 | Based on graphene film structure Terahertz wave coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234619.4A CN106785292A (en) | 2016-12-28 | 2016-12-28 | Based on graphene film structure Terahertz wave coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106785292A true CN106785292A (en) | 2017-05-31 |
Family
ID=58925183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611234619.4A Pending CN106785292A (en) | 2016-12-28 | 2016-12-28 | Based on graphene film structure Terahertz wave coupler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106785292A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109075415A (en) * | 2018-06-12 | 2018-12-21 | 东莞理工学院 | Based on the adjustable communication function device of dynamic |
| CN111610155A (en) * | 2020-06-02 | 2020-09-01 | 西安交通大学 | Terahertz device for capturing and detecting circulating tumor cells |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485501A (en) * | 2014-11-27 | 2015-04-01 | 中国计量学院 | Adjustable terahertz wave coupler with graphene three-output-port structure |
| CN105914253A (en) * | 2016-04-07 | 2016-08-31 | 浙江大学 | Polarization controllable nanometer light source and microscopic system thereof, and photon chip system |
-
2016
- 2016-12-28 CN CN201611234619.4A patent/CN106785292A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104485501A (en) * | 2014-11-27 | 2015-04-01 | 中国计量学院 | Adjustable terahertz wave coupler with graphene three-output-port structure |
| CN105914253A (en) * | 2016-04-07 | 2016-08-31 | 浙江大学 | Polarization controllable nanometer light source and microscopic system thereof, and photon chip system |
Non-Patent Citations (1)
| Title |
|---|
| JASON R. GARNER等: ""Design Study of a Fundamental Mode Input Coupler for a 372-GHz Gyro-TWA I:Rectangular-to-Circular Coupling Methods"", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109075415A (en) * | 2018-06-12 | 2018-12-21 | 东莞理工学院 | Based on the adjustable communication function device of dynamic |
| WO2019237250A1 (en) * | 2018-06-12 | 2019-12-19 | 东莞理工学院 | Dynamically adjustable communication function device |
| CN111610155A (en) * | 2020-06-02 | 2020-09-01 | 西安交通大学 | Terahertz device for capturing and detecting circulating tumor cells |
| CN111610155B (en) * | 2020-06-02 | 2022-04-05 | 西安交通大学 | Terahertz device for capturing and detecting circulating tumor cells |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Baehr-Jones et al. | Nonlinear polymer-clad silicon slot waveguide modulator with a half wave voltage of 0.25 V | |
| Salamin et al. | Direct conversion of free space millimeter waves to optical domain by plasmonic modulator antenna | |
| Brida et al. | An extremely low-noise heralded single-photon source: A breakthrough for quantum technologies | |
| CN103197486B (en) | A kind of Terahertz modulated amplifier based on graphene waveguide structure | |
| CN104795411B (en) | Grid-control graphene nanobelt array THz detectors and tuning methods | |
| Yang et al. | Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers | |
| Dühring et al. | Plasmonic versus dielectric enhancement in thin-film solar cells | |
| WO2009134506A3 (en) | Enhanced silicon all-optical modulator | |
| CN106602184B (en) | Based on graphene period fluting THz wave tunable filter | |
| Yang et al. | Hybrid structure laser based on semiconductor nanowires and a silica microfiber knot cavity | |
| CN106785292A (en) | Based on graphene film structure Terahertz wave coupler | |
| CN103454784A (en) | TeraHertz wave tunable optical control switch based on artificial electromagnetic materials | |
| CN205691892U (en) | Based on the adjustable terahertz wave attenuator of molybdenum disulfide film structure | |
| CN103682541B (en) | THz wave one point of four power splitter of unsymmetric structure | |
| Anderson et al. | Photon-assisted tunneling in carbon nanotube optical rectennas: Characterization and modeling | |
| Meziani et al. | Room temperature generation of terahertz radiation from a grating-bicoupled plasmon-resonant emitter: Size effect | |
| CN104485501B (en) | Adjustable terahertz wave coupler with graphene three-output-port structure | |
| Ho Wu et al. | Coherent and incoherent terahertz beams measured from a terahertz photoconductive antenna | |
| CN103682542B (en) | Symmetrical multi-grid THz wave power splitter | |
| Zhang et al. | Improvement of amplified spontaneous emission performance of conjugated polymer waveguides with a low loss cladding | |
| Luo et al. | Ultra-efficient modulation of BaTiO3 crystal thin film waveguide with a two-dimensional optic-electric field matching scheme | |
| Gacemi et al. | Identification of several propagation regimes for terahertz surface waves guided by planar Goubau lines | |
| Malik et al. | THz generation by laser coupling to carbon nanotube array | |
| CN205691814U (en) | Molybdenum bisuphide ribbon structure is adjustable THz wave power splitter | |
| CN104317118A (en) | Graphene-based electric-control liquid crystal light-converging micro-lens array chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |