CN205691814U - Molybdenum bisuphide ribbon structure is adjustable THz wave power splitter - Google Patents
Molybdenum bisuphide ribbon structure is adjustable THz wave power splitter Download PDFInfo
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- CN205691814U CN205691814U CN201620682542.6U CN201620682542U CN205691814U CN 205691814 U CN205691814 U CN 205691814U CN 201620682542 U CN201620682542 U CN 201620682542U CN 205691814 U CN205691814 U CN 205691814U
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- molybdenum
- bisuphide
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Abstract
The utility model discloses a kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter.It includes the first molybdenum bisuphide band, the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band, the 4th molybdenum bisuphide band, the 5th molybdenum bisuphide band, silicon dioxide layer, basal layer, signal input part, the first signal output part, secondary signal outfan；The upper strata of basal layer is silicon dioxide layer, and silicon dioxide layer is covered with the first molybdenum bisuphide band, the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band, the 4th molybdenum bisuphide band, the 5th molybdenum bisuphide band；It is applied to the second molybdenum bisuphide band and basal layer, the 3rd molybdenum bisuphide band and the bias direct current supply voltage of basal layer by regulation, regulates the effective dielectric constant of curing molybdenum sheet, it is achieved terahertz signal can divide in Power Regulation.The advantages such as this utility model has simple and compact for structure, and size is little, and isolation is high, and design principle is simple.
Description
Technical field
This utility model relates to THz wave power splitter, particularly relates to a kind of adjustable THz wave of molybdenum bisuphide ribbon structure
Power splitter.
Background technology
Terahertz Technology is a kind of new technique that twentieth century grows up the end of the eighties.The frequency model that THz wave is unique
Enclose (between microwave frequency band and optical frequencies) and cover molecular vibration and the rotation spectrum of most macromolecular substances, therefore most
Macromolecular substances all has obvious dactylogram characteristic at its absorption spectra of Terahertz frequency range, reflectance spectrum or emission spectra, this
Any is not available for microwave.Terahertz pulse light source has a lot of unique character compared with conventional light source, such as: transient state
Property, broadband property, coherence, mental retardation etc., these features determine Terahertz Technology in a lot of basic research fields, commercial Application
Field, medical domain, the communications field and biological field have considerable application prospect.Therefore Terahertz Technology and too
The focus that the research of hertz device is widely studied in being increasingly becoming world wide.
THz wave power splitter is the THz wave functional device that a class is important, and THz wave power splitter becomes in recent years
The focus of research both at home and abroad and difficult point.But existing THz wave power splitter mostly also exists that structure is complicated, merit component efficiency is low,
High in cost of production shortcomings, so research structure is simple, merit component efficiency height, low cost, size are little, has the terahertz of tunable performance
Hereby ripple power splitter is significant.
Summary of the invention
This utility model provides a kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter, and technical scheme is as follows:
Molybdenum bisuphide ribbon structure is adjustable, and THz wave power splitter includes basal layer, silicon dioxide layer, the first molybdenum bisuphide
Band, the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band, the 4th molybdenum bisuphide band, the 5th molybdenum bisuphide band, signal
Input, the first signal output part, secondary signal outfan；The upper strata of basal layer is silicon dioxide layer, silicon dioxide layer upper
Layer be covered with the first molybdenum bisuphide band, the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band, the 4th molybdenum bisuphide band, the
Five molybdenum bisuphide bands, the first molybdenum bisuphide band, the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band, the 4th curing
Molybdenum band and the 5th molybdenum bisuphide band are parallel to each other distribution, and the distance of adjacent two parallel stripes is equal, the second curing
Molybdenum band is between the first molybdenum bisuphide band and the 4th molybdenum bisuphide band, and the 3rd molybdenum bisuphide band is positioned at the one or two sulfur
Change between molybdenum band and the 5th molybdenum bisuphide band, the left end of the first molybdenum bisuphide band and the left side central portion phase of silicon dioxide layer
Even, the right-hand member of the 4th molybdenum bisuphide band and the 5th molybdenum bisuphide band is all connected with the right side of silicon dioxide layer, the two or two sulfur
Change on the left of the left end of the distance on the left of left end and the silicon dioxide layer of molybdenum band and the 3rd molybdenum bisuphide band and silicon dioxide layer
Distance equal, the left end of the first molybdenum bisuphide band is provided with signal input part, and the right-hand member of the 4th molybdenum bisuphide band is provided with
One signal output part, the right-hand member of the 5th molybdenum bisuphide band is provided with secondary signal outfan；Terahertz signal is from signal input part
Input, exports from the first signal output part and secondary signal outfan, and the second molybdenum bisuphide band, the 3rd molybdenum bisuphide band divide
Not and it is provided with bias direct current voltage source between substrate, second can be changed in the case of changing applied bias direct voltage source voltage
Molybdenum bisuphide band and the effective dielectric constant of the 3rd molybdenum bisuphide band, such that it is able to control THz wave from the first signal
Outfan and the power of secondary signal outfan output, it is achieved Power Regulation can divide effect.
The material of described basal layer is P-type silicon material, a length of 4.9～5.1 μm, and width is 3.9～4.1 μm, thickness
It is 1～2 μm.A length of 4.9～5.1 μm of described silicon dioxide layer, width is 3.9～4.1 μm, and thickness is 1～2 μm.Institute
The first molybdenum bisuphide band, the 4th molybdenum bisuphide band and the 5th molybdenum bisuphide band stated equivalently-sized, length is 1.9
～2.1 μm, width is 0.01～0.02 μm.Described the second molybdenum bisuphide band, the size phase of the 3rd molybdenum bisuphide band
With, length is 2.9～3.1 μm, and width is 0.01～0.02 μm.Described the first molybdenum bisuphide band, the second curing
Between molybdenum band, the 3rd molybdenum bisuphide band, the 4th molybdenum bisuphide band, the 5th molybdenum bisuphide band between adjacent parallel tapes
Distance is 0.1～0.2 μm.The second described molybdenum bisuphide band and the left end of the 3rd molybdenum bisuphide band and silicon dioxide layer
The distance in left side is 0.9～1.1 μm.
Accompanying drawing illustrates:
Fig. 1 is the three dimensional structure schematic diagram of molybdenum bisuphide ribbon structure adjustable THz wave power splitter；
Fig. 2 is the top view of molybdenum bisuphide ribbon structure adjustable THz wave power splitter；
Fig. 3 be in embodiment 1 power splitter in the THz wave transfer rate of the first signal output part and secondary signal outfan
Surface field intensity distribution when being 1: 1, during transmission；
Fig. 4 be in embodiment 1 power splitter in the THz wave transfer rate of the first signal output part and secondary signal outfan
Surface field intensity distribution when being 1: 3, during transmission；
Fig. 5 be in embodiment 1 power splitter when THz wave all exports from secondary signal outfan, surface during transmission
Electric-field intensity distribution figure；
Fig. 6 be in embodiment 1 power splitter THz wave all from first signal output part output time, surface during transmission
Electric-field intensity distribution figure.
Detailed description of the invention
As shown in Fig. 1～2, molybdenum bisuphide ribbon structure is adjustable, and THz wave power splitter includes basal layer 1, silicon dioxide layer
2, first molybdenum bisuphide band the 3, second molybdenum bisuphide band 4, the 3rd molybdenum bisuphide band 5, the 4th molybdenum bisuphide band 6,
Five molybdenum bisuphide bands 7, signal input part the 8, first signal output part 9, secondary signal outfan 10；The upper strata of basal layer 1 is
Silicon dioxide layer 2, the upper strata of silicon dioxide layer 2 is covered with first molybdenum bisuphide band the 3, second molybdenum bisuphide band the 4, the 3rd 2 sulfur
Change molybdenum band the 5, the 4th molybdenum bisuphide band the 6, the 5th molybdenum bisuphide band 7, first molybdenum bisuphide band the 3, second molybdenum bisuphide
Band the 4, the 3rd molybdenum bisuphide band the 5, the 4th molybdenum bisuphide band 6 and the 5th molybdenum bisuphide band 7 are parallel to each other distribution, and phase
The distance of adjacent two parallel stripes is equal, and the second molybdenum bisuphide band 4 is positioned at the first molybdenum bisuphide band 3 and the 4th molybdenum bisuphide
Between band 6, the 3rd molybdenum bisuphide band 5 between the first molybdenum bisuphide band 3 and the 5th molybdenum bisuphide band 7, first
The left end of molybdenum bisuphide band 3 is connected with the left side central portion of silicon dioxide layer 2, the 4th molybdenum bisuphide band 6 and the 5th curing
The right-hand member of molybdenum band 7 all right sides with silicon dioxide layer 2 are connected, and the left end of the second molybdenum bisuphide band 4 is left with silicon dioxide layer 2
The distance of side and the left end of the 3rd molybdenum bisuphide band 5 are equal with the distance on the left of silicon dioxide layer 2, the first molybdenum bisuphide band
The left end of 3 is provided with signal input part 8, and the right-hand member of the 4th molybdenum bisuphide band 6 is provided with the first signal output part 9, the 5th curing
The right-hand member of molybdenum band 7 is provided with secondary signal outfan 10；Terahertz signal inputs from signal input part 8, from the first signal output
End 9 and secondary signal outfan 10 export, and the second molybdenum bisuphide band the 4, the 3rd molybdenum bisuphide band 5 is respectively and between substrate 1
It is provided with bias direct current voltage source, the second molybdenum bisuphide band can be changed in the case of changing applied bias direct voltage source voltage
4 and the 3rd effective dielectric constant of molybdenum bisuphide band 5, such that it is able to control THz wave from the first signal output part 9 He
The power of secondary signal outfan 10 output, it is achieved Power Regulation can divide effect.
The material of described basal layer 1 is P-type silicon material, a length of 4.9～5.1 μm, and width is 3.9～4.1 μm, thickness
It is 1～2 μm.A length of 4.9～5.1 μm of described silicon dioxide layer 2, width is 3.9～4.1 μm, and thickness is 1～2 μm.Institute
The first molybdenum bisuphide band the 3, the 4th molybdenum bisuphide band 6 of stating and the 5th molybdenum bisuphide band 7 equivalently-sized, length is
1.9～2.1 μm, width is 0.01～0.02 μm.The chi of the second described molybdenum bisuphide band the 4, the 3rd molybdenum bisuphide band 5
Very little identical, length is 2.9～3.1 μm, and width is 0.01～0.02 μm.The first described molybdenum bisuphide band the 3, the 2nd 2
Between molybdenum sulfide band the 4, the 3rd molybdenum bisuphide band the 5, the 4th molybdenum bisuphide band the 6, the 5th molybdenum bisuphide band 7 adjacent, parallel
The distance of bar interband is 0.1～0.2 μm.The second described molybdenum bisuphide band 4 and left end and two of the 3rd molybdenum bisuphide band 5
The distance in the left side of silicon oxide layer 2 is 0.9～1.1 μm.
Embodiment 1
Molybdenum bisuphide ribbon structure is adjustable THz wave power splitter:
As shown in Fig. 1～2, molybdenum bisuphide ribbon structure is adjustable, and THz wave power splitter includes basal layer 1, silicon dioxide layer
2, first molybdenum bisuphide band the 3, second molybdenum bisuphide band 4, the 3rd molybdenum bisuphide band 5, the 4th molybdenum bisuphide band 6,
Five molybdenum bisuphide bands 7, signal input part the 8, first signal output part 9, secondary signal outfan 10；The upper strata of basal layer 1 is
Silicon dioxide layer 2, the upper strata of silicon dioxide layer 2 is covered with first molybdenum bisuphide band the 3, second molybdenum bisuphide band the 4, the 3rd 2 sulfur
Change molybdenum band the 5, the 4th molybdenum bisuphide band the 6, the 5th molybdenum bisuphide band 7, first molybdenum bisuphide band the 3, second molybdenum bisuphide
Band the 4, the 3rd molybdenum bisuphide band the 5, the 4th molybdenum bisuphide band 6 and the 5th molybdenum bisuphide band 7 are parallel to each other distribution, and phase
The distance of adjacent two parallel stripes is equal, and the second molybdenum bisuphide band 4 is positioned at the first molybdenum bisuphide band 3 and the 4th molybdenum bisuphide
Between band 6, the 3rd molybdenum bisuphide band 5 between the first molybdenum bisuphide band 3 and the 5th molybdenum bisuphide band 7, first
The left end of molybdenum bisuphide band 3 is connected with the left side central portion of silicon dioxide layer 2, the 4th molybdenum bisuphide band 6 and the 5th curing
The right-hand member of molybdenum band 7 all right sides with silicon dioxide layer 2 are connected, and the left end of the second molybdenum bisuphide band 4 is left with silicon dioxide layer 2
The distance of side and the left end of the 3rd molybdenum bisuphide band 5 are equal with the distance on the left of silicon dioxide layer 2, the first molybdenum bisuphide band
The left end of 3 is provided with signal input part 8, and the right-hand member of the 4th molybdenum bisuphide band 6 is provided with the first signal output part 9, the 5th curing
The right-hand member of molybdenum band 7 is provided with secondary signal outfan 10；Terahertz signal inputs from signal input part 8, from the first signal output
End 9 and secondary signal outfan 10 export, and the second molybdenum bisuphide band the 4, the 3rd molybdenum bisuphide band 5 is respectively and between substrate 1
It is provided with bias direct current voltage source.
The material of basal layer is P-type silicon material, a length of 5 μm, and width is 4 μm, and thickness is 1 μm.The length of silicon dioxide layer
Degree is 5 μm, and width is 4 μm, and thickness is 1 μm.First molybdenum bisuphide band, the 4th molybdenum bisuphide band and the 5th molybdenum bisuphide article
Carry is equivalently-sized, and length is 2 μm, and width is 0.01 μm.Second molybdenum bisuphide band, the chi of the 3rd molybdenum bisuphide band
Very little identical, length is 3 μm, and width is 0.01 μm.First molybdenum bisuphide band, the second molybdenum bisuphide band, the three or two sulfur
Changing distance between adjacent parallel tapes between molybdenum band, the 4th molybdenum bisuphide band, the 5th molybdenum bisuphide band is 0.15 μm.The
The left end of two molybdenum bisuphide bands and the 3rd molybdenum bisuphide band is 1 μm with the distance in the left side of silicon dioxide layer.Curing
The property indices of molybdenum ribbon structure is adjustable THz wave power splitter uses COMSOL Multiphysics software to survey
Examination, result shows, taking operating frequency is 7THz, by regulating the bias voltage and the three or two on the second molybdenum bisuphide band respectively
Bias voltage on molybdenum sulfide band, the THz wave transfer rate obtaining the first signal output part and secondary signal outfan is 1:
When 1, its surface field intensity is the most as shown in Figure 3；The THz wave of the first signal output part and secondary signal outfan passes
When defeated rate is 1: 3, its surface field intensity is the most as shown in Figure 4；THz wave all when secondary signal outfan exports,
Its surface field intensity is the most as shown in Figure 5；THz wave is all when the first signal output part output, and its surface field is strong
Degree is the most as shown in Figure 6.The isolation of power splitter is up to 39.86dB, it is achieved that can the effect divided of Power Regulation.
Claims (7)
1. a molybdenum bisuphide ribbon structure adjustable THz wave power splitter, it is characterised in that include basal layer (1), silicon dioxide
Layer (2), the first molybdenum bisuphide band (3), the second molybdenum bisuphide band (4), the 3rd molybdenum bisuphide band (5), the 4th curing
Molybdenum band (6), the 5th molybdenum bisuphide band (7), signal input part (8), the first signal output part (9), secondary signal outfan
(10)；The upper strata of basal layer (1) is silicon dioxide layer (2), and the upper strata of silicon dioxide layer (2) is covered with the first molybdenum bisuphide band
(3), the second molybdenum bisuphide band (4), the 3rd molybdenum bisuphide band (5), the 4th molybdenum bisuphide band (6), the 5th molybdenum bisuphide
Band (7), the first molybdenum bisuphide band (3), the second molybdenum bisuphide band (4), the 3rd molybdenum bisuphide band (5), the four or two sulfur
Change molybdenum band (6) and the 5th molybdenum bisuphide band (7) is parallel to each other distribution, and the distance of adjacent two parallel stripes is equal, the
Two molybdenum bisuphide bands (4) are positioned between the first molybdenum bisuphide band (3) and the 4th molybdenum bisuphide band (6), the 3rd curing
Molybdenum band (5) is positioned between the first molybdenum bisuphide band (3) and the 5th molybdenum bisuphide band (7), the first molybdenum bisuphide band (3)
Left end be connected with the left side central portion of silicon dioxide layer (2), the 4th molybdenum bisuphide band (6) and the 5th molybdenum bisuphide band (7)
Right-hand member all right sides with silicon dioxide layer (2) be connected, the left end of the second molybdenum bisuphide band (4) is left with silicon dioxide layer (2)
The distance of side and the left end of the 3rd molybdenum bisuphide band (5) are equal with the distance in silicon dioxide layer (2) left side, the first molybdenum bisuphide
The left end of band (3) is provided with signal input part (8), and the right-hand member of the 4th molybdenum bisuphide band (6) is provided with the first signal output part
(9), the right-hand member of the 5th molybdenum bisuphide band (7) is provided with secondary signal outfan (10)；Terahertz signal is from signal input part (8)
Input, exports from the first signal output part (9) and secondary signal outfan (10).
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
The material of the basal layer (1) stated is P-type silicon material, a length of 4.9～5.1 μm, and width is 3.9～4.1 μm, and thickness is 1～2 μ
m。
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
A length of 4.9～5.1 μm of the silicon dioxide layer (2) stated, width is 3.9～4.1 μm, and thickness is 1～2 μm.
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
The first molybdenum bisuphide band (3), the 4th molybdenum bisuphide band (6) and the 5th molybdenum bisuphide band (7) stated equivalently-sized, long
Degree is 1.9～2.1 μm, and width is 0.01～0.02 μm.
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
The second molybdenum bisuphide band (4) of stating, the 3rd molybdenum bisuphide band (5) equivalently-sized, length is 2.9～3.1 μm, width
It is 0.01～0.02 μm.
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
The first molybdenum bisuphide band (3) of stating, the second molybdenum bisuphide band (4), the 3rd molybdenum bisuphide band (5), the 4th molybdenum bisuphide
Between band (6), the 5th molybdenum bisuphide band (7), the distance between adjacent parallel tapes is 0.1～0.2 μm.
A kind of molybdenum bisuphide ribbon structure adjustable THz wave power splitter the most according to claim 1, it is characterised in that institute
The distance in the left side of the second molybdenum bisuphide band (4) stated and the left end of the 3rd molybdenum bisuphide band (5) and silicon dioxide layer (2)
It is 0.9～1.1 μm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919587A (en) * | 2018-06-12 | 2018-11-30 | 西北大学 | One kind being based on transition metal chalcogenide terahertz sources source and exciting method |
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2016
- 2016-06-22 CN CN201620682542.6U patent/CN205691814U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108919587A (en) * | 2018-06-12 | 2018-11-30 | 西北大学 | One kind being based on transition metal chalcogenide terahertz sources source and exciting method |
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Granted publication date: 20161116 Termination date: 20170622 |