CN105914245A - Self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell - Google Patents
Self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell Download PDFInfo
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- CN105914245A CN105914245A CN201610195546.6A CN201610195546A CN105914245A CN 105914245 A CN105914245 A CN 105914245A CN 201610195546 A CN201610195546 A CN 201610195546A CN 105914245 A CN105914245 A CN 105914245A
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- 238000001228 spectrum Methods 0.000 title claims abstract description 13
- 238000004140 cleaning Methods 0.000 title claims abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 8
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 6
- 238000009833 condensation Methods 0.000 title abstract description 4
- 230000005494 condensation Effects 0.000 title abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims 2
- 238000010276 construction Methods 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 239000011733 molybdenum Substances 0.000 abstract description 3
- 239000011247 coating layer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000036626 Mental retardation Diseases 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- NHIXZFCJMICYJZ-UHFFFAOYSA-N benzene;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.C1=CC=CC=C1 NHIXZFCJMICYJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell. According to the cell, double-faced fresnel lenses are employed for condensation, a lens surface has a super hydrophilicity self-cleaning TiO2 coating layer, and a Gb3+, Yb3+, Tm3+ and Er3+ co-doped NaYF4 photon upconversion six-direction luminescent layer with thickness of 0.2mum is added between a CGSe absorption layer and a molybdenum (M0) back electrode. According to the cell, excellent photoelectric conversion efficacy is realized. The integral structure of the cell is described as a pattern 1, including (1), a cell module outline drawing; (2), an aluminum heat sink; (3), a box body U-shaped bottom casing; (4), a metal support separator plate; (5), 18 sets of cells; (6), a secondary circular condenser; (7), a TiO2-based self-cleaning coating layer condenser body containing 18 sets of fresnel lenses; and (8), a waterproof conjunction box.
Description
Technical field: the present invention relates to a kind of clean surfaces, two-sided Fresnel Lenses optically focused, utilizing rare earth ion doped photon up-conversion luminescence, strengthen ultraviolet, visible ray, the one of near-infrared photon upconversion mechanism is novel, efficient, wide spectrum CGse thin-film solar cells.
Background technology: the product that CIGS thin film solaode is best performance, technology is the most ripe, but because of the precious metal material that indium (IN) element earth's crust reserves are rare, the each field of each electron trade all uses, as being used in a large number in the manufacturing industry of solaode, thing must have the risk that unit's material lacks in the future.The present invention is exactly cancellation indium (IN) element in CIGS battery, takes precautions against this risk in advance.At molybdenum (M0) between dorsum electrode layer and CGse absorbed layer, increase thick layer 0.2um by rare earth element Gb3+(20%) NayF4 adulterated is the NayF4:yb of base material3+、Tm3+、Er3+Photon upconverting fluorescent material layer.Utilize the layer of nanomaterial of conversion on these photons, two or more mental retardation ultraviolets, near-infrared photon are converted into the characteristic that high energy visible light is sub, widen the solaode response range to each band of light district, thus it is greatly improved the photoelectric transformation efficiency of CGse thin-film solar cells, realize solaode and contain the full solar energy spectral limit of lid, become the New-type wide-spectrum thin-film solar cells on practical significance.
Accompanying drawing illustrates:
Fig. 1 is the population structure schematic diagram in the present invention.
Fig. 2 is the principle assumption diagram of the two-sided Fresnel Lenses light focusing unit of the self-clean type in the present invention.
Fig. 3 is the single chip architecture figure of the CGse wide spectrum thin-film solar cells in the present invention.
Fig. 4 is the CGse wide spectrum thin-film solar cells monomer series-connected electrical system connection figure in the present invention.
Specific implementation method:
Below in conjunction with the accompanying drawing of the present invention, to the technical scheme in the embodiment of the present invention, carry out positive description clear, complete, it is clear that the embodiment of description is only a part of embodiment of invention.Rather than the embodiment all divided.Give embodiment in the present invention, all realistic case of those of ordinary skill in the art's acquisition under not making performing creative labour premise, broadly fall into scope.Population structure schematic diagram in the present invention as shown in Figure 1:
(1) 2000*700*150 (mm) module outline drawing；
(2) aluminum-made heat sink, specification (mm)；3*(1500*100*15)；
(3) the U-shaped bottom shell body of modular tank metallic plate；
(4) self-clean type two-sided Fresnel Lenses group intermediate supports metal partion (metp)；
(5) rare earth Gb3+、yb3+、Tm3+、Er3+Ion doping CGse wide spectrum thin-film solar cells；
(6) secondary circular condenser lens, material is polymethyl benzene methacrylate (PMMA)；
(7) there is surface super hydrophilic TiO2Self-cleaning coat 18 pieces (diameter 200mm) two-sided Fresnel Lenses group body for main material；
(8) water proofing property rosette.
Fig. 2 is the principle assumption diagram of the two-sided Fresnel Lenses light focusing unit of the self-clean type in the present invention:
(1) there is the two-sided Fresnel Lenses of self-cleaning coat with TiO2 as main material；
(2) the intermediate supports metal partion (metp) that battery of lens is overall；
(3) circular secondary condensation lens；
(4) 100*100 (mm) CGse wide spectrum thin film solar cell sheet；
(5) the U-shaped metal base plate of modular tank；
(6) aluminum-made heat sink；
Fig. 3 is the structure chart of the CGSe wide spectrum thin-film solar cells in the present invention:
(1) electrode layer before Graphene；
(2) ZnO Window layer thick for 0.05um；
(3) ZnS cushion thick for 0.05um
(4) CGse absorbed layer thick for 2um；
(5) Gb thick for 0.5um3+、yb3+、Tm3+、Er3+Coating is changed on the NayF4 photon of codope；
(6) 1um thickness molybdenum (Mo) back electrode；
(7) 3mm thickness Na glass substrate；
(8) EVA seal protection layer.
(9) the monolithic train electrical connection schematic diagram of the CGse wide spectrum thin-film solar cells during Fig. 4 is the present invention.
Claims (1)
- Self-clean type two-sided Fersnel lens optically focused the most as shown in Figure 1, rare earth Gb3+、yb3+、Tm3+、Er3+Change CGse wide spectrum thin-film solar cells on codope photon to include:(1) the module totality construction profile size of patent of the present invention:2000×700×15(mm)；(2) aluminum-made heat sink, specification (mm): 3 × (1500 × 100 × 15)；(3) casing ∪ type shell；(4) self-cleaning surface two-sided Fersnel lens group intermediate supports metal partion (metp)；(5) rare earth Gb3+、yb3+、Tm3+、Er3+Codope CGse wide spectrum thin-film solar cells 18 Battery pack sheet；(6) secondary circular condenser lens, material is polymethyl methacrylate (PMMA)；(7) there is surface super hydrophilic TiO2It is 18 groups of overall two-sided Fersnel lens groups of main self-cleaning coat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610195546.6A CN105914245A (en) | 2016-04-01 | 2016-04-01 | Self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610195546.6A CN105914245A (en) | 2016-04-01 | 2016-04-01 | Self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914245A true CN105914245A (en) | 2016-08-31 |
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|---|---|---|---|
| CN201610195546.6A Pending CN105914245A (en) | 2016-04-01 | 2016-04-01 | Self-cleaning double-faced fresnel lens condensation rare earth Gb3+, Yb3+, Tm3+ and Er3+ co-doped photon upconversion CGSe wide spectrum film solar energy cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN105914245A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044585A (en) * | 2009-10-20 | 2011-05-04 | 安科太阳能公司 | Concentrated photovoltaic system modules using iii-v semiconductor solar cells |
| KR20110133537A (en) * | 2004-12-02 | 2011-12-13 | 소니 주식회사 | Reproducing apparatus, reproducing method, and recording medium |
| CN103592701A (en) * | 2012-08-15 | 2014-02-19 | 中国科学院理化技术研究所 | Anti-reflective coating of Fresnel lens surface and preparation method thereof |
-
2016
- 2016-04-01 CN CN201610195546.6A patent/CN105914245A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110133537A (en) * | 2004-12-02 | 2011-12-13 | 소니 주식회사 | Reproducing apparatus, reproducing method, and recording medium |
| CN102044585A (en) * | 2009-10-20 | 2011-05-04 | 安科太阳能公司 | Concentrated photovoltaic system modules using iii-v semiconductor solar cells |
| CN103592701A (en) * | 2012-08-15 | 2014-02-19 | 中国科学院理化技术研究所 | Anti-reflective coating of Fresnel lens surface and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李志强: "新型纳米结构材料制备及其在薄膜太阳电池的应用研究", 《新型纳米结构材料制备及其在薄膜太阳电池的应用研究》 * |
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