CN105914172A - Substrate etching monitoring method - Google Patents
Substrate etching monitoring method Download PDFInfo
- Publication number
- CN105914172A CN105914172A CN201610419140.1A CN201610419140A CN105914172A CN 105914172 A CN105914172 A CN 105914172A CN 201610419140 A CN201610419140 A CN 201610419140A CN 105914172 A CN105914172 A CN 105914172A
- Authority
- CN
- China
- Prior art keywords
- substrate
- eps
- monitoring method
- base plate
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses a substrate etching monitoring method. The method is characterized in that an EPS sensor is arranged at the position corresponding to one side edge of an etched substrate, and at least one EPS sensor is arranged at the position corresponding to the other side edge of the etched substrate. According to the invention, the plurality of EPS sensors are utilized to monitor the etching condition of the substrate, the current state of the substrate is accurately reflected, and the incomplete etching condition is avoided.
Description
Technical field
The present invention relates to a kind of method that base plate carving and corrosion is monitored.
Background technology
Use an EPS that the etching situation of substrate is monitored during TFT-LCD etching, but EPS can only the etching situation in a little scope in monitoring substrate, progress along with TFE-LCD manufacturing process, substrate area is increasing, in substrate, film thickness distribution is difficult to control, and the etching situation in a little scope cannot etching situation in the whole substrate of accurate response.Etching situation in substrate little scope is only monitored by prior art with an EPS.In this little scope possible during EPS detection, in substrate, other region also has film not caused etching residue by etching completely.
Summary of the invention
It is an object of the invention to provide a kind of monitoring method, it is possible to accurate judgement substrate can be optionally.
It is an object of the invention to be achieved through the following technical solutions:
A kind of monitoring method for base plate carving and corrosion, it is arranging an EPS sensor with the substrate that is etched position that side is corresponding, is arranging at least one EPS sensor in the position corresponding with another side of substrate that is etched.
Wherein, respectively this EPS sensor is arranged on the oscillation center of its substrate regions monitored.And, respectively this EPS sensor be located at the substrate that is etched pattern outside position on.
When the minima in the signal value that each EPS sensor obtains is more than or equal to threshold value, then it is assumed that base plate carving and corrosion is complete.
The most progressive effect of the present invention is: utilize multiple EPS sensor to be monitored the etching situation of substrate, it is possible to the state that accurate reflection substrate is current, it is to avoid occur etching incomplete situation.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the embodiment of the present invention.
Detailed description of the invention
Provide present pre-ferred embodiments below in conjunction with the accompanying drawings, to describe technical scheme in detail.
A kind of monitoring method for base plate carving and corrosion, it arranges an EPS sensor 2 in the position corresponding with a side of the substrate 1 that is etched, arranges a 2nd EPS sensor 3 in the position corresponding with another side of substrate 1 that is etched.Multiple EPS sensor 2 and the 2nd EPS sensor 3 can also be set.Oneth EPS sensor and the 2nd EPS sensor are identical devices.
Wherein, respectively this EPS sensor is arranged on the oscillation center of its substrate regions monitored (as shown in dotted line in Fig. 1).And, respectively this EPS sensor be located at the substrate that is etched pattern (as shown in Fig. 1 chain lines) outside position on.
When the minima in the signal value that each EPS sensor obtains is more than or equal to threshold value, then it is assumed that base plate carving and corrosion is complete.
Claims (4)
1. a monitoring method for base plate carving and corrosion, it is arranging an EPS with the substrate that is etched position that side is corresponding
Sensor, it is characterised in that at least one EPS sensor is set in the position corresponding with another side of substrate that is etched.
2. according to the monitoring method for base plate carving and corrosion described in claim 1, it is characterised in that respectively this EPS sensor is arranged on the oscillation center of its substrate regions monitored.
3. according to the monitoring method for base plate carving and corrosion described in claim 2, it is characterised in that respectively this EPS sensor be located at the substrate that is etched pattern outside position on.
4. according to the monitoring method for base plate carving and corrosion described in claim 3, it is characterised in that when the minima in the signal value that each EPS sensor obtains is more than or equal to threshold value, then it is assumed that base plate carving and corrosion is complete.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419140.1A CN105914172A (en) | 2016-06-15 | 2016-06-15 | Substrate etching monitoring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610419140.1A CN105914172A (en) | 2016-06-15 | 2016-06-15 | Substrate etching monitoring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914172A true CN105914172A (en) | 2016-08-31 |
Family
ID=56750963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610419140.1A Withdrawn CN105914172A (en) | 2016-06-15 | 2016-06-15 | Substrate etching monitoring method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105914172A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359132A (en) * | 2017-07-24 | 2017-11-17 | 深圳市华星光电技术有限公司 | The supervising device and lithographic method of etching apparatus |
| CN109087873A (en) * | 2018-08-14 | 2018-12-25 | 京东方科技集团股份有限公司 | A kind of detection substrate, detection device and detection device |
| CN110426451A (en) * | 2019-07-15 | 2019-11-08 | 深圳市华星光电技术有限公司 | The method for measurement of etch-rate measuring equipment and lateral etch rate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996566A (en) * | 2005-12-28 | 2007-07-11 | 上海广电Nec液晶显示器有限公司 | A monitoring method for base plate carving and corrosion |
| US20140346647A1 (en) * | 2011-12-13 | 2014-11-27 | Csmc Technologies Fab1 Co.,Ltd | Monitoring structure and monitoring method for silicon wet etching depth |
-
2016
- 2016-06-15 CN CN201610419140.1A patent/CN105914172A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996566A (en) * | 2005-12-28 | 2007-07-11 | 上海广电Nec液晶显示器有限公司 | A monitoring method for base plate carving and corrosion |
| US20140346647A1 (en) * | 2011-12-13 | 2014-11-27 | Csmc Technologies Fab1 Co.,Ltd | Monitoring structure and monitoring method for silicon wet etching depth |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107359132A (en) * | 2017-07-24 | 2017-11-17 | 深圳市华星光电技术有限公司 | The supervising device and lithographic method of etching apparatus |
| CN109087873A (en) * | 2018-08-14 | 2018-12-25 | 京东方科技集团股份有限公司 | A kind of detection substrate, detection device and detection device |
| CN109087873B (en) * | 2018-08-14 | 2020-11-17 | 京东方科技集团股份有限公司 | Detection substrate, detection device and detection equipment |
| CN110426451A (en) * | 2019-07-15 | 2019-11-08 | 深圳市华星光电技术有限公司 | The method for measurement of etch-rate measuring equipment and lateral etch rate |
| CN110426451B (en) * | 2019-07-15 | 2021-12-24 | Tcl华星光电技术有限公司 | Etching rate measuring device and lateral etching rate measuring method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20160831 |
|
| WW01 | Invention patent application withdrawn after publication |