CN105913987A - Zinc oxide pressure sensitive resistor - Google Patents
Zinc oxide pressure sensitive resistor Download PDFInfo
- Publication number
- CN105913987A CN105913987A CN201610365131.9A CN201610365131A CN105913987A CN 105913987 A CN105913987 A CN 105913987A CN 201610365131 A CN201610365131 A CN 201610365131A CN 105913987 A CN105913987 A CN 105913987A
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- Prior art keywords
- zinc oxide
- layer
- electrode layer
- electrode
- transition zone
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/102—Varistor boundary, e.g. surface layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/144—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being welded or soldered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a zinc oxide pressure sensitive resistor which comprises a zinc oxide ceramic substrate, an electrode layer and an electrode lead, wherein the electrode layer is arranged on the surface of the zinc oxide ceramic substrate; the electrode lead is arranged on the electrode layer; the electrode layer comprises a transition layer which is connected with the zinc oxide ceramic substrate and a welded layer positioned on the outer side of the transition layer; the transition layer is made of nickel, chromium, titanium, aluminum, copper or the alloy of the elements; the welded layer is made of gold, silver, copper or the alloy of the elements.
Description
Technical field
The present invention relates to the technology of preparing of zinc oxide varistor.
Background technology
Zinc oxide varistor is with Zinc oxide powder as base, according to different ratio blended metal oxide high temperature sintering
Becoming idiosome, on idiosome surface coated with electrode layer, then welding electrode goes between and makes, and it includes zinc oxide-based ceramic idiosome, layout
At the electrode layer of ceramic surface and be welded on contact conductor three part of electrode layer surface, electrode layer is used for and pottery produces Europe
Nurse contacts, and lead-in wire is used for extraction electrode to be connected with circuit.
As varistor, its electrode layer needs to bear the most several thousand of Wan An training in moment with the contact point of contact conductor
Surge current, this electrode layer and lead-in wire are proposed harshness requirement.The Zinc-oxide piezoresistor of correlation technique, with electricity
The contact conductor of pole layer welding is copper straight line seal wire, the silver layer that electrode layer then re-sinters for silk screen printing, operating current and
Surge current flows through electrode layer by this root straight line seal wire, does not burn electrode during for making powerful surge current by electrode layer
Layer, silver electrode layer thickness has to reach tens microns of microns the most up to a hundred.Obviously, the varistor of correlation technique also exists all
Many shortcomings:
1) contact, so can cause owing to silver broadly falls into not mate with zinc oxide ceramics either engineering properties or electrical properties
Two problems, one, electrode layer is very poor with the adhesion of zinc oxide ceramics, is generally lower than 15N, uses middle electrode layer easily
Coming off, the poor reliability of device, the life-span is short；Its two, ohmic contact resistance is big, the most several ohms, and surge current leads to
When crossing the biggest ohmic contact resistance, produced heat is also corresponding big, easily burns electrode layer；
2) being straight line seal wire due to contact conductor, electric current is concentrated mainly at this seal wire and the linear contact lay of electrode film layer, electricity
Current density distributed pole is uneven, and electrode layer is burnt in powerful surge current easily local, thus causes resistor permanent damage；
3) for preventing electrode layer from burning, its silver electrode layer thickness has to reach tens microns of microns the most up to a hundred, needs to disappear
The a large amount of expensive silver of consumption, production cost is high.
4) the silk-screen silver slurry of electrode layer needs tunnel cave high temperature sintering, and energy consumption is big and technical process exists pollution；Silver slurry
In there is also the unauthorized substances such as lead, product does not meets RoSH standard.
Summary of the invention
It is contemplated that one of technical problem solved the most to a certain extent in correlation technique.
To this end, it is an object of the present invention to propose a kind of have that life-span length, energy consumption be low, the zinc oxide pressure-sensitive electricity of environmental protection
Resistance device.
Zinc oxide varistor according to embodiments of the present invention, described resistor includes: zinc oxide ceramics substrate；Arrange
Electrode layer at described zinc oxide ceramics substrate surface；With the contact conductor being arranged on described electrode layer, wherein, described electrode
Layer includes the transition zone being connected with described zinc oxide ceramics substrate and is positioned at the weld layer outside described transition zone, described transition
Layer is formed by nickel, chromium, titanium, aluminum, copper or its alloy, and described weld layer is formed by gold, silver, copper or its alloy.
Zinc oxide varistor according to embodiments of the present invention, by arranging transition zone, can make electrode layer and pottery
It is firmly combined with between the two between substrate so that the tensile strength of electrode layer can bring up to the pressure of 40N, significantly larger than correlation technique
The adhesion of sensitive resistor；And make between electrode layer and ceramic substrate, to form good Ohmic contact, its ohmic contact resistance
Several ohm of zero point can be reduced to, thus electrode layer Joule heat under surge current has been greatly reduced, improve electrode layer
The negotiability of itself；Meanwhile, this transition zone can also stop the metals such as the silver in weld layer to the internal expansion of ceramic substrate effectively
Dissipate.
It addition, zinc oxide varistor according to the above embodiment of the present invention can also have following additional technology spy
Levy:
In some embodiments of the invention, described electrode layer also includes the resistance between described transition zone and described weld layer
Barrier.
In some embodiments of the invention, described transition zone is formed by by nickel, chromium, titanium, aluminum, the alloy of copper, described weldering
Connecing layer to be formed by gold, silver, copper or its alloy, described barrier layer is formed by monel.
In some embodiments of the invention, described transition zone, described barrier layer and described weld layer are all by sputtering
Film build method is formed.
In some embodiments of the invention, the both side surface up and down at described zinc oxide ceramics substrate is respectively provided with
State electrode layer.
In some embodiments of the invention, described transition region thickness is 10nm 200nm, and described barrier layer thickness is
300nm 4000nm, described weld layer thickness is 50nm 500nm.
In some embodiments of the invention, described contact conductor is curve-like contact conductor or pellet electrode lead-in wire.
In some embodiments of the invention, described contact conductor is incense coil shape, Y shape, triangle or hook-shaped copper thread
Contact conductor.
Each dependent claims is followed by the advantage that respective additional technical feature brings.(can also put and retouch in an embodiment
State)
Accompanying drawing explanation
Fig. 1 is the cross sectional representation of the zinc oxide varistor of the embodiment of the present invention, wherein: 1 zinc oxide pressure-sensitive
Ceramic substrate, 2 electrode layers, 21 transition zones, 22 barrier layers, 23 weld layers, 3 contact conductors；
Fig. 2 is the partial top view of the zinc oxide varistor of the embodiment of the present invention, and wherein, (a) contact conductor 3 is incense coil
Shape, (b) contact conductor 3 is hook-shaped, and (c) contact conductor 3 is pellet electrode；
Fig. 3 is the preparation method flow chart of zinc oxide varistor；
Fig. 4 is mask clamping fixture schematic diagram, wherein, 1 zinc oxide ceramics substrate, 7 cope match-plate patterns, 71 is heavy every, 72 through holes,
73 chamferings, 74 screws, 8 lower bolsters.
Detailed description of the invention
Below in conjunction with accompanying drawing and specific implementation method, the invention will be further described, but summary of the invention is not limited to accompanying drawing.
First, with reference to accompanying drawing 1, zinc oxide varistor according to embodiments of the present invention is described.
As it is shown in figure 1, this zinc oxide varistor comprises: zinc oxide-based ceramic substrate 1, be arranged on described ceramic substrate
The electrode layer 2 on 1 surface and be arranged on the contact conductor 3 on described electrode layer 2.Herein, it should be noted that shown in Fig. 1
It is each formed with electrode layer 2 and the situation of contact conductor 3 in zinc oxide ceramics substrate 1 both sides, but the invention is not restricted to this, also
Only side at zinc oxide ceramics substrate 1 can be formed with electrode layer 2 and contact conductor 3, it is also possible to be to be formed with electricity in side
Pole layer 2 and contact conductor 3, and form other electrode material layer and pin configurations etc. at opposite side.
Wherein, electrode layer 2 can be by transition zone 21, is positioned at the barrier layer 22 outside transition zone 21 and is positioned at outermost
The three-decker sputtered film that the weld layer 23 of side is constituted, it is also possible to be the two layers of knot being made up of transition zone 21 and weld layer 23
Structure sputtered film.
Specifically, transition zone 21 can select the one relatively active metal material system of nickel, chromium, titanium, aluminum, copper or its alloy
, its thickness is 10nm 200nm.This transition zone 21 can make to be firmly combined with between the two between electrode layer and ceramic substrate, makes
The tensile strength of electrode layer can bring up to the adhesion of piezoresistor of 40N, significantly larger than correlation technique；And make electricity
Forming good Ohmic contact between pole layer and ceramic substrate, its ohmic contact resistance can be reduced to several ohm of zero point, thus
Electrode layer Joule heat under surge current is greatly reduced, has improve the negotiability of electrode layer itself；Meanwhile, this transition
Layer can also stop the metals such as the silver in weld layer to ceramic substrate diffusion inside effectively.
The weld layer 23 on surface is prepared by gold, silver, copper or its alloy material.At the assembly of thin films electrode prepared by the present invention
In film, its thickness is that 50nm 500nm can meet performance requirement.
In three-decker, it is positioned at the barrier layer 22 in intermediate layer, selects equal with bottom transition zone 21 and surface soldered layer 23
The material that can form good combination prepares, for example, it is possible to by the element in described transition zone 21 and selected from described welding
The alloy that element in layer 23 is constituted is formed, it is also possible to consider from adhesion angle, is situated between selected from element property in periodic chart
Element between the element and the element of weld layer 23 of transition zone 21 is formed.The thickness on barrier layer 22 is 300nm
5000nm.The effect on middle barrier layer 22 has two, and one is cost-effective, reduces the consumption of the precious metals such as silver, and two is resistance
Gear corrosion of high-temperature solder in subsequent soldering processes.Owing to gold silver is the biggest with the solid solubility of scolding tin, it is difficult to bear high-temperature solder
Corrosion, if not having intermediate barrier layers 22 metallic film, then the thickness of surface soldered layer 23 metallic film needs several microns even ten
The several microns of corrosions that just can bear high temperature scolding tin, this can cause cost to increase considerably；Relatively thin and cheap nickel
Intermediate barrier layers 22 prepared by the material such as evanohm, monel just can effectively stop the corrosion of high temperature scolding tin, and significantly drops
Low cost.It addition, in the present invention, the gross thickness of the electrode layer 2 of zinc oxide varistor only has 2-4 microns, and
As long as just can reach excellent performance with a small amount of silver, therefore production cost saves more than 60% than prior art.
As contact conductor 3, can be that the incense coil shape that goes out as shown in Figure 2 (a) shows, the hook-shaped copper wire electrode of Fig. 2 (b) draw
Pellet electrode lead-in wire shown in line and Fig. 2 (c), further, it is also possible to be such as Y shape, the copper wire electrode such as triangle lead-in wire
(not shown).The contact conductor of the shapes such as incense coil shape can effective scattered current density, make surge current be evenly distributed whole electricity
Pole layer, such that it is able to improve the resistance to surge shock resistance of the zinc oxide varistor of the present invention further.
Below, the preparation method of zinc oxide varistor is described with reference to Fig. 1 ~ Fig. 4.
As it is shown on figure 3, according to this preparation method, comprise the steps:
A) zinc oxide ceramics substrate is provided.
This zinc oxide ceramics substrate 1 can be the commercially available zinc oxide ceramics being generally used for preparing zinc oxide varistor
Substrate, it is also possible to be the zinc oxide ceramics substrate prepared voluntarily according to the method for prior art.
B) at the surface configuration electrode layer of described zinc oxide ceramics substrate.
When arranging electrode layer 2, can be as it is shown in figure 1, respectively in the both sides of zinc oxide ceramics substrate 1 successively sputter coating
Transition zone 21, barrier layer 22 and weld layer 23；Can also only sputter coating transition zone 21 and weld layer 23.
About the concrete material of transition zone 21, barrier layer 22 and weld layer 23 and film forming thickness with reference to above-mentioned for
The explanation of resistor, does not repeats them here.
Method at the surface configuration electrode layer 2 of zinc oxide ceramics substrate 1 can have multiple, such as printing-sintering process etc..
Preferably, in an embodiment of the present invention, sputtering method vapor deposition forming is used.
When carrying out sputtering method vapor deposition forming, it is possible to use mask clamping fixture as shown in Figure 4.
As shown in Figure 4, this mask clamp includes cope match-plate pattern 7 and the lower bolster 8 being connected with described cope match-plate pattern 7, wherein,
It is formed on described cope match-plate pattern 7 lower surface:
Heavy every 71 for arranging the cylinder of zinc oxide ceramics substrate 1；And
Being positioned at the heavy cylindrical hole 72 above 71 of described cylinder, wherein, the sectional area of described cylindrical hole 72 is less than
Described cylinder is heavy every 71.The upper end of described cylindrical hole 72 can also be formed with chamfering 73.Preferably, on lower bolster 8 also
It is formed with every 71 and described cylindrical hole 72 corresponding cylinder heavy with the described cylinder in described cope match-plate pattern respectively
Heavy every and cylindrical hole.Cope match-plate pattern 7 can be connected by screw 74 with described lower bolster 8.
Described cope match-plate pattern 7 and described lower bolster 8 can be respectively formed with multiple by described cylinder heavy every 71 with described
The group that cylindrical hole 72 is constituted, such that it is able to arrange electrode layer 2 simultaneously on multiple zinc oxide ceramics substrates.
Below, as a example by transition zone is set, sputter explanation to specifically how using this mask clamping fixture to carry out.
First, zinc oxide ceramics substrate 1 is arranged on the lower bolster 8 of mask clamp heavy every in, then by cope match-plate pattern 7
Close correspondingly (making this zinc oxide ceramics substrate 1 insert sinking in 71 corresponding to cope match-plate pattern 7), hereafter will with screw 74
Cope match-plate pattern 7 and lower bolster 8 fasten, to clamp this zinc oxide ceramics substrate 1.Hereafter, this mask clamping fixture is arranged on sputtering
Intracavity, sputters with transition zone 21 material for target center, then transition zone 21 material sputtered is sunk by this cylindrical hole 72
Amass on zinc oxide ceramics substrate 1, thus on zinc oxide ceramics substrate 1, form transition zone 21.
About barrier layer 22 and weld layer 23, can be completed by similar method, as long as changing target center material, and root
The concrete technology condition suitably adjusting in sputtering method plated film according to the material used.
After sputter coating completes, in cavity, be filled with air, when in cavity consistent with external atmospheric pressure time open valve
Door, takes out workpiece, then obtaining surface configuration has the zinc oxide ceramics substrate 1 of electrode layer 2.
C) contact conductor is set on described electrode layer.
After setting up electrode layer, finally, also need to arrange contact conductor on described electrode layer 2.
Contact conductor 3 is curve-like copper wire electrode lead-in wire (such as, incense coil shape, Y shape, triangle or hook-shaped) or sheet
Shape contact conductor.
Contact conductor 3 can be arranged on the surface of electrode layer 2 by the way of welding.
By above-mentioned preparation process, then obtain zinc oxide varistor.
Whole preparation process environmental protection, electrode layer does not contains unauthorized substances；Energy resource consumption is low, reduces consumption than prior art
Energy more than 45%；This process consistency is reproducible, is suitable for producing in enormous quantities.
Below, by specific embodiment, the present invention is further described.
Embodiment 1
In the present embodiment, be Ф 10mm at diameter dimension, thickness be 2mm model be the Zinc-oxide piezoresistor ceramics of 10471K
Surface sputtering preparation three-decker electrode layer.Wherein, the transition zone of bottom uses chromium, middle barrier layer to use monel,
The weld layer on surface uses silver.
In order to remove zinc oxide ceramics substrate surface impurity, zinc oxide ceramics substrate is put into rolling washing 30 in ball mill
Minute, respectively ultrasonic cleaning 20 minutes in tap water and deionized water the most successively, put in baking oven 120 DEG C after drying and be dried
Dry 20 minutes.
Zinc oxide ceramics substrate after cleaning, drying is loaded in special mask clamping fixture, then mask clamping fixture is installed to work
On part frame；Work rest is sent in many target sputtering equipments, and by equipment cavity evacuation, in making cavity, vacuum reaches 5 × 10- 3Pa；Being filled with high purity argon in vacuum cavity, in dynamic maintenance vacuum chamber, the pressure of argon is 5 × 10-1Pa；Spatter at many targets
Sputter bottom transition zone successively in jet device cavity, material is chromium film, and thickness is 200nm, intermediate barrier layers, and material is that ambrose alloy closes
Gold film, thickness is 1400nm, surface soldered layer, and material is silverskin, and thickness is 200nm.
After having sputtered, take out workpiece.
Use ohmic contact resistance value ＜ 1 of the zinc oxide varistor that above-mentioned technique prepares, substrate and electrode
Ω, welding pulling force is >=2 kg, and pressure sensitive voltage is 440v 480v, nonlinear factor >=53, leakage current≤6uA, discharge capacity
Reaching the level of equivalent specifications silver ink firing anodizing zinc piezoresistor, production cost can save more than 60%.
Claims (8)
1. a zinc oxide varistor, it is characterised in that described resistor includes:
Zinc oxide ceramics substrate；
It is arranged on the electrode layer of described zinc oxide ceramics substrate surface；With
It is arranged on the contact conductor on described electrode layer,
Wherein, described electrode layer includes the transition zone being connected with described zinc oxide ceramics substrate and is positioned at outside described transition zone
Weld layer, described transition zone is formed by nickel, chromium, titanium, aluminum, copper or its alloy, and described weld layer is by gold, silver, copper or its alloy
Formed.
2. zinc oxide varistor as claimed in claim 1, it is characterised in that described electrode layer also includes being positioned at described mistake
Cross the barrier layer between layer and described weld layer.
3. zinc oxide varistor as claimed in claim 2, it is characterised in that described transition zone by by nickel, chromium, titanium, aluminum,
The alloy of copper is formed, and described weld layer is formed by gold, silver, copper or its alloy, and described barrier layer is formed by monel.
4. zinc oxide varistor as claimed in claim 2, it is characterised in that described transition zone, described barrier layer and
Described weld layer is all formed by spatter film forming method.
5. the zinc oxide varistor as described in any one of claim 1 ~ 4, it is characterised in that at described zinc oxide ceramics base
The both side surface up and down of sheet is respectively arranged with described electrode layer.
6. zinc oxide varistor as claimed in claim 2, it is characterised in that described transition region thickness is 10nm
200nm, described barrier layer thickness is 300nm 4000nm, and described weld layer thickness is 50nm 500nm.
7. zinc oxide varistor as claimed in claim 1, it is characterised in that described contact conductor is that curve-like electrode draws
Line or pellet electrode lead-in wire.
8. zinc oxide varistor as claimed in claim 7, it is characterised in that described contact conductor be incense coil shape, Y shape,
Triangle or hook-shaped copper wire electrode lead-in wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365131.9A CN105913987A (en) | 2016-05-30 | 2016-05-30 | Zinc oxide pressure sensitive resistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365131.9A CN105913987A (en) | 2016-05-30 | 2016-05-30 | Zinc oxide pressure sensitive resistor |
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| CN201610365131.9A Pending CN105913987A (en) | 2016-05-30 | 2016-05-30 | Zinc oxide pressure sensitive resistor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107705942A (en) * | 2017-09-25 | 2018-02-16 | 江苏时瑞电子科技有限公司 | A kind of oxidation resistant ceramic thermal resistance copper electrode |
| CN107768053A (en) * | 2017-09-25 | 2018-03-06 | 江苏时瑞电子科技有限公司 | A kind of ceramic thermistor electrode and preparation method thereof |
| CN108922701A (en) * | 2018-05-23 | 2018-11-30 | 江苏时瑞电子科技有限公司 | A kind of thermistor two-layer electrode and preparation method thereof |
| CN109727738A (en) * | 2018-12-28 | 2019-05-07 | 肇庆鼎晟电子科技有限公司 | A kind of two-sided Heterogeneous Composite electrode heat sensitive chip of high temperature resistant |
| CN111029068A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability composite film electrode thermosensitive chip |
| CN111048271A (en) * | 2019-12-31 | 2020-04-21 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Cr/Ni-Cu-Au composite electrode thermosensitive chip |
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| CN1595551A (en) * | 2004-07-10 | 2005-03-16 | 华中科技大学 | Method for preparing ZnO ceramic film low-voltage piezoresistor |
| CN103400675A (en) * | 2013-07-11 | 2013-11-20 | 苏州求是真空电子有限公司 | Zinc oxide pressure-sensitive resistor and preparation method thereof |
| CN203617055U (en) * | 2013-09-17 | 2014-05-28 | 昆山萬豐電子有限公司 | Zinc oxide pressure-sensitive resistor with composite electrode structure |
| CN204257308U (en) * | 2014-11-03 | 2015-04-08 | 厦门万明电子有限公司 | A kind of zinc oxide varistor |
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| JPS5914603A (en) * | 1982-07-16 | 1984-01-25 | 松下電器産業株式会社 | Voltage nonlinear resistor and method of producing same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107705942A (en) * | 2017-09-25 | 2018-02-16 | 江苏时瑞电子科技有限公司 | A kind of oxidation resistant ceramic thermal resistance copper electrode |
| CN107768053A (en) * | 2017-09-25 | 2018-03-06 | 江苏时瑞电子科技有限公司 | A kind of ceramic thermistor electrode and preparation method thereof |
| CN107768053B (en) * | 2017-09-25 | 2019-04-19 | 江苏时恒电子科技有限公司 | A kind of ceramic thermistor electrode and preparation method thereof |
| CN108922701A (en) * | 2018-05-23 | 2018-11-30 | 江苏时瑞电子科技有限公司 | A kind of thermistor two-layer electrode and preparation method thereof |
| CN109727738A (en) * | 2018-12-28 | 2019-05-07 | 肇庆鼎晟电子科技有限公司 | A kind of two-sided Heterogeneous Composite electrode heat sensitive chip of high temperature resistant |
| WO2020134014A1 (en) * | 2018-12-28 | 2020-07-02 | 肇庆鼎晟电子科技有限公司 | High temperature-resistant dual-sided heterogeneous combined electrode thermosensitive chip |
| US11631511B2 (en) | 2018-12-28 | 2023-04-18 | Dingsense Electronics Technology Co., Ltd | Thermistor chip and preparation method thereof |
| CN111029068A (en) * | 2019-12-31 | 2020-04-17 | 广东爱晟电子科技有限公司 | High-precision and high-reliability composite film electrode thermosensitive chip |
| CN111048271A (en) * | 2019-12-31 | 2020-04-21 | 广东爱晟电子科技有限公司 | High-precision and high-reliability Cr/Ni-Cu-Au composite electrode thermosensitive chip |
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Application publication date: 20160831 |