CN105803391A - Mask fixture for forming electrode layer by splashing coating film on zinc oxide ceramic substrate - Google Patents
Mask fixture for forming electrode layer by splashing coating film on zinc oxide ceramic substrate Download PDFInfo
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- CN105803391A CN105803391A CN201610365133.8A CN201610365133A CN105803391A CN 105803391 A CN105803391 A CN 105803391A CN 201610365133 A CN201610365133 A CN 201610365133A CN 105803391 A CN105803391 A CN 105803391A
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- CN
- China
- Prior art keywords
- zinc oxide
- electrode layer
- oxide ceramics
- ceramics substrate
- cope match
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a mask fixture for forming an electrode layer by splashing a coating film on a zinc oxide ceramic substrate. The mask fixture is characterized by comprising an upper template and a lower template connected with the upper template, wherein the lower surface of the upper template is formed with cylindrical sinking intervals for arranging the zinc oxide ceramic substrate and cylindrical through holes positioned above the cylindrical sinking intervals; and the sectional areas of the cylindrical through holes are smaller than the sectional areas of the cylindrical sinking intervals.
Description
Technical field
The present invention relates to zinc oxide varistor technology of preparing.
Background technology
Zinc oxide varistor is with Zinc oxide powder for base, idiosome is become according to different ratio blended metal oxide high temperature sintering, on idiosome surface coated with electrode layer, welding electrode goes between and makes again, it includes zinc oxide-based ceramic idiosome, is arranged in the electrode layer of ceramic surface and is welded on contact conductor three part of electrode layer surface, electrode layer is used for producing Ohmic contact with pottery, and lead-in wire is used for extraction electrode to be connected with circuit.
Contact point as varistor, its electrode layer and contact conductor needs to bear the surge current of several thousand even several Wan An trainings in moment, and electrode layer and lead-in wire are proposed the requirement of harshness by this.The Zinc-oxide piezoresistor of correlation technique, the contact conductor welded with electrode layer is copper straight line seal wire, the silver layer that electrode layer then re-sinters for silk screen printing, operating current and surge current flow through electrode layer by this root straight line seal wire, not burning electrode layer during for making powerful surge current by electrode layer, silver electrode layer thickness has to reach tens microns of microns even up to a hundred.Obviously, the varistor of correlation technique also exists shortcomings, and especially, the silk-screen silver of electrode layer slurry needs tunnel cave high temperature sintering, and energy consumption is big and technical process exists and pollutes；There is also the unauthorized substances such as lead in silver slurry, product does not meet RoSH standard.
Summary of the invention
It is contemplated that one of technical problem solved at least to a certain extent in correlation technique.
For this, it is an object of the present invention to propose that a kind of energy consumption is low, the mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate of environmental protection..
The mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate according to embodiments of the present invention, including cope match-plate pattern and the lower bolster that is connected with described cope match-plate pattern, wherein, described cope match-plate pattern lower surface is formed: cylinder for arranging zinc oxide ceramics substrate heavy every；And be positioned at the heavy cylindrical hole every top of described cylinder, wherein, the sectional area of described cylindrical hole heavy less than described cylinder every.
Mask clamping fixture according to embodiments of the present invention, it is possible to form electrode layer in ceramic substrate surface by sputtering method, such that it is able to greatly reduce energy consumption, and is capable of producing in enormous quantities.
It addition, mask clamping fixture according to the above embodiment of the present invention, it is also possible to there is following additional technical characteristic:
In some embodiments of the invention, the upper end of described cylindrical hole is formed with chamfering.
In some embodiments of the invention, described cope match-plate pattern is connected by screw with described lower bolster.
In some embodiments of the invention, described lower bolster is also formed with respectively heavy with the described cylinder in described cope match-plate pattern every and the corresponding cylinder of described cylindrical hole heavy every and cylindrical hole.
In some embodiments of the invention, described cope match-plate pattern and described lower bolster are respectively formed with multiple heavy every the group constituted with described cylindrical hole by described cylinder.
Accompanying drawing explanation
Fig. 1 is the cross sectional representation of zinc oxide varistor prepared by mask clamping fixture according to embodiments of the present invention, wherein: 1 zinc oxide pressure-sensitive ceramic substrate, 2 electrode layers, 21 transition zones, 22 barrier layers, 23 weld layers, 3 contact conductors；
Fig. 2 is the partial top view of zinc oxide varistor prepared by mask clamping fixture according to embodiments of the present invention, and wherein, (a) contact conductor 3 is incense coil shape, and (b) contact conductor 3 is hook-shaped, and (c) contact conductor 3 is pellet electrode；
Fig. 3 is the preparation method flow chart of zinc oxide varistor；
Fig. 4 is the mask clamping fixture schematic diagram of the embodiment of the present invention, and wherein, 1 zinc oxide ceramics substrate, 7 cope match-plate patterns, 71 is heavy every, 72 through holes, 73 chamferings, 74 screws, 8 lower bolsters.
Detailed description of the invention
Below in conjunction with accompanying drawing and specific implementation method, the invention will be further described, but summary of the invention is not limited to accompanying drawing.
First, with reference to accompanying drawing 1, zinc oxide varistor prepared by mask clamping fixture according to embodiments of the present invention is described.
As it is shown in figure 1, this zinc oxide varistor comprises: zinc oxide-based ceramic substrate 1, be arranged on the electrode layer 2 on described ceramic substrate 1 surface and be arranged on the contact conductor 3 on described electrode layer 2.Herein, it should be noted that, Fig. 1 illustrates and has been each formed with electrode layer 2 and the situation of contact conductor 3 in zinc oxide ceramics substrate 1 both sides, but the invention is not restricted to this, electrode layer 2 and contact conductor 3 only can also be formed in the side of zinc oxide ceramics substrate 1, can also is that and be formed with electrode layer 2 and contact conductor 3 in side, and form other electrode material layer and pin configurations etc. at opposite side.
Wherein, electrode layer 2 can be by transition zone 21, is positioned at the barrier layer 22 outside transition zone 21 and is positioned at the three-decker sputtered film that outermost weld layer 23 is constituted, it is also possible to be the two-layer structure sputtered film being made up of transition zone 21 and weld layer 23.
Specifically, transition zone 21 can select the one relatively active metal material of nickel, chromium, titanium, aluminum, copper or its alloy to prepare, and its thickness is 10nm 200nm.This transition zone 21 can make to be firmly combined with between the two between electrode layer and ceramic substrate so that the tensile strength of electrode layer can bring up to 40N, is significantly larger than the adhesion of the piezoresistor of correlation technique；And make between electrode layer and ceramic substrate, to form good Ohmic contact, its ohmic contact resistance can be reduced to zero point several ohm, thus electrode layer Joule heat under surge current has been greatly reduced, improves the negotiability of electrode layer itself；Meanwhile, this transition zone can also stop the metals such as the silver in weld layer to ceramic substrate diffusion inside effectively.
The weld layer 23 on surface is prepared by gold, silver, copper or its alloy material.In the assembly of thin films electrode film prepared by the present invention, its thickness is that 50nm 500nm can meet performance requirement.
In three-decker, the barrier layer 22 of centrally located layer, selection and bottom transition zone 21 and surface soldered layer 23 all can form the material of good combination and prepare, such as, the alloy can being made up of the element in described transition zone and the element in described weld layer 23 is formed, can also consider from adhesion angle, be formed between the element between the element and the element of weld layer 23 of transition zone 21 selected from element property in periodic chart.The thickness on barrier layer 22 is 300nm 5000nm.The effect on middle barrier layer 22 has two, and one is save cost, reduces the consumption of the precious metals such as silver, and two is the corrosion being blocked in subsequent soldering processes high-temperature solder.Owing to the solid solubility of gold silver Yu scolding tin is very big, it is difficult to bear high-temperature solder corrosion, if not having intermediate barrier layers 22 metallic film, then the thickness of surface soldered layer 23 metallic film needs several microns even tens microns just can bear the corrosion of high temperature scolding tin, and this can cause that cost increases considerably；Intermediate barrier layers 22 prepared by the materials such as relatively thin and cheap nichrome, monel just can effectively stop the corrosion of high temperature scolding tin, and considerably reduces cost.It addition, in the present invention, the gross thickness of the electrode layer 2 of zinc oxide varistor only has 2-4 microns, as long as and just can reach excellent performance with a small amount of silver, therefore the comparable prior art of production cost saves more than 60%.
As contact conductor 3, it can be the pellet electrode lead-in wire shown in incense coil shape, the hook-shaped copper wire electrode lead-in wire of Fig. 2 (b) and Fig. 2 (c) gone out as shown in Figure 2 (a) shows, further, it is also possible to be such as copper wire electrodes lead-in wire (not shown) such as Y shape, trianglees.The contact conductor 3 of the shapes such as incense coil shape can effective scattered current density, make surge current be evenly distributed whole electrode layer, such that it is able to improve the resistance to surge shock resistance of the zinc oxide varistor of the present invention further.
Below, with reference to Fig. 1 ~ Fig. 4 preparation method that zinc oxide varistor is described.
As it is shown on figure 3, this preparation method comprises the steps:
A) zinc oxide ceramics substrate is provided.
This zinc oxide ceramics substrate 1 can be the zinc oxide ceramics substrate that zinc oxide varistor is prepared in commercially available being generally used for, it is also possible to be the zinc oxide ceramics substrate prepared voluntarily according to the method for prior art.
B) at the surface configuration electrode layer of described zinc oxide ceramics substrate.
When arranging electrode layer 2, it is possible to including: b-1) at the surface configuration transition zone 21 of described zinc oxide ceramics substrate 1；And b-2) on described transition zone 21, weld layer 23 is set.
In addition, it can include b-11) after forming described transition zone 21 and before described weld layer 23 is set, on described transition zone 21 surface configuration barrier layer 22.
That is, it is possible to as it is shown in figure 1, sputter coating transition zone 21, barrier layer 22 and weld layer 23 successively in the both sides of zinc oxide ceramics substrate 1 respectively；Can also only sputter coating transition zone 21 and weld layer 23.
About the concrete material of transition zone 21, barrier layer 22 and weld layer 23 and film forming thickness with reference to the above-mentioned explanation for resistor, do not repeat them here.
Method at the surface configuration electrode layer 2 of zinc oxide ceramics substrate 1 can have multiple, for instance printing-sintering process etc..Preferably, in an embodiment of the present invention, sputtering method vapor deposition forming is adopted.
When carrying out sputtering method vapor deposition forming, it is possible to use mask clamping fixture as shown in Figure 4.
As shown in Figure 4, this mask clamping fixture includes cope match-plate pattern 7 and the lower bolster 8 being connected with described cope match-plate pattern 7, wherein, is formed on described cope match-plate pattern 7 lower surface:
Cylinder for arranging zinc oxide ceramics substrate 1 is heavy every 71；And
Being positioned at the heavy cylindrical hole 72 above 71 of described cylinder, wherein, the sectional area of described cylindrical hole 72 is heavy less than described cylinder every 71.The upper end of described cylindrical hole 72 can also be formed with chamfering 73.Preferably, lower bolster 8 is also formed with every 71 and described cylindrical hole 72 corresponding cylinder heavy with the described cylinder in described cope match-plate pattern 7 respectively heavy every and cylindrical hole.Cope match-plate pattern 7 can pass through screw 74 with described lower bolster 8 and be connected.
It is multiple heavy every 71 groups constituted with described cylindrical hole 72 by described cylinder to be respectively formed with in described cope match-plate pattern 7 and described lower bolster 8, such that it is able to arrange electrode layer 2 on multiple zinc oxide ceramics substrates simultaneously.
Below, to arrange transition zone, carry out sputtering explanation to specifically how using this mask clamping fixture.
First, zinc oxide ceramics substrate 1 is arranged on the lower bolster 8 of mask clamping fixture heavy every in, then cope match-plate pattern 7 is closed correspondingly (making this zinc oxide ceramics substrate 1 insert sinking in 71 corresponding to cope match-plate pattern 7), hereafter with screw 74, cope match-plate pattern 7 and lower bolster 8 are fastened, to clamp this zinc oxide ceramics substrate 1.Hereafter, be arranged in sputtering chamber by this mask clamping fixture, sputter for target center with buffer layer material, then the buffer layer material sputtered is deposited on zinc oxide ceramics substrate 1 by this cylindrical hole 72, thus forming transition zone 21 on zinc oxide ceramics substrate 1.
About barrier layer 22 and weld layer 23, it is possible to completed by similar method, as long as changing target center material, and the concrete technology condition suitably adjusting in sputtering method plated film according to the material used.
After sputter coating completes, in cavity, be filled with air, when in cavity consistent with external atmospheric pressure time open valve, take out workpiece, then obtaining surface configuration has the zinc oxide ceramics substrate 1 of electrode layer 2.
C) contact conductor is set on described electrode layer.
After setting up electrode layer, finally, also need to arrange contact conductor on described electrode layer 2.
Contact conductor 3 be curve-like copper wire electrode lead-in wire (such as, incense coil shape, Y shape, triangle or hook-shaped) or pellet electrode lead-in wire.
Contact conductor 3 can be arranged on the surface of electrode layer 2 by the mode welded.
By above-mentioned preparation process, then obtain zinc oxide varistor.
Whole preparation process environmental protection, electrode layer is without unauthorized substances；Energy resource consumption is low, and comparable prior art reduces power consumption more than 45%；This process consistency is reproducible, is suitable for producing in enormous quantities.
Below, by specific embodiment, the present invention is further described.
Embodiment 1
In the present embodiment, being Ф 10mm at diameter dimension, thickness is 2mm model is that the Zinc-oxide piezoresistor ceramics surface sputtering of 10471K prepares three-decker electrode layer.Wherein, the transition zone of bottom adopts chromium, and middle barrier layer adopts monel, and the weld layer on surface adopts silver.
In order to remove zinc oxide ceramics substrate surface impurity, zinc oxide ceramics substrate is put into ball mill rolls washing 30 minutes, then respectively ultrasonic cleaning 20 minutes in tap water and deionized water successively, put in baking oven 120 DEG C after drying and dry dry 20 minutes.
Zinc oxide ceramics substrate after cleaning, drying is loaded in special mask clamping fixture, then mask clamping fixture is installed on work rest；Work rest is sent in many target sputtering equipments, and by equipment cavity evacuation, makes vacuum in cavity reach 5 × 10- 3Pa；Being filled with high purity argon in vacuum cavity, in dynamic maintenance vacuum chamber, the pressure of argon is 5 × 10-1Pa；Sputter bottom transition zone successively in many target sputtering equipments cavity, material is chromium film, and thickness is 200nm, intermediate barrier layers, and material is monel film, and thickness is 1400nm, surface soldered layer, and material is silverskin, and thickness is 200nm.
After having sputtered, take out workpiece.
Use the zinc oxide varistor that above-mentioned technique prepares, ohmic contact resistance value < 1 Ω of substrate and electrode, welding pulling force is >=2kg, pressure sensitive voltage is 440v 480v, nonlinear factor >=53, leakage current≤6uA, discharge capacity reaches the level of equivalent specifications silver ink firing anodizing zinc piezoresistor, and production cost can save more than 60%.
Claims (5)
1. form a mask clamping fixture for electrode layer for sputter coating on zinc oxide ceramics substrate, including cope match-plate pattern and the lower bolster that is connected with described cope match-plate pattern, wherein, described cope match-plate pattern lower surface be formed:
Cylinder for arranging zinc oxide ceramics substrate heavy every；And
Be positioned at the heavy cylindrical hole every top of described cylinder, wherein, the sectional area of described cylindrical hole heavy less than described cylinder every.
2. the mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate as claimed in claim 1, it is characterised in that the upper end of described cylindrical hole is formed with chamfering.
3. the mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate as claimed in claim 1, it is characterised in that described cope match-plate pattern is connected by screw with described lower bolster.
4. the mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate as claimed in claim 1, it is characterized in that, described lower bolster is also formed with respectively heavy with the described cylinder in described cope match-plate pattern every and the corresponding cylinder of described cylindrical hole heavy every and cylindrical hole.
5. the as claimed in claim 4 mask clamping fixture forming electrode layer for sputter coating on zinc oxide ceramics substrate, it is characterised in that described cope match-plate pattern and be respectively formed with multiple being sunk by described cylinder every the group constituted with described cylindrical hole in described lower bolster.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365133.8A CN105803391A (en) | 2016-05-30 | 2016-05-30 | Mask fixture for forming electrode layer by splashing coating film on zinc oxide ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610365133.8A CN105803391A (en) | 2016-05-30 | 2016-05-30 | Mask fixture for forming electrode layer by splashing coating film on zinc oxide ceramic substrate |
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| Publication Number | Publication Date |
|---|---|
| CN105803391A true CN105803391A (en) | 2016-07-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610365133.8A Pending CN105803391A (en) | 2016-05-30 | 2016-05-30 | Mask fixture for forming electrode layer by splashing coating film on zinc oxide ceramic substrate |
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| CN (1) | CN105803391A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8192901B2 (en) * | 2010-10-21 | 2012-06-05 | Asahi Glass Company, Limited | Glass substrate-holding tool |
| CN204125521U (en) * | 2014-08-14 | 2015-01-28 | 昆山萬豐電子有限公司 | A kind of mask clamping fixture for magnetron sputtering technique |
| CN204265842U (en) * | 2014-12-09 | 2015-04-15 | 南京中电熊猫晶体科技有限公司 | Be applicable to the coating clamp of SMD small-size product |
| CN206069986U (en) * | 2016-05-30 | 2017-04-05 | 苏州米盟智能装备科技有限公司 | The mask clamping fixture of electrode layer is formed for the sputter coating on zinc oxide ceramics substrate |
-
2016
- 2016-05-30 CN CN201610365133.8A patent/CN105803391A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8192901B2 (en) * | 2010-10-21 | 2012-06-05 | Asahi Glass Company, Limited | Glass substrate-holding tool |
| CN204125521U (en) * | 2014-08-14 | 2015-01-28 | 昆山萬豐電子有限公司 | A kind of mask clamping fixture for magnetron sputtering technique |
| CN204265842U (en) * | 2014-12-09 | 2015-04-15 | 南京中电熊猫晶体科技有限公司 | Be applicable to the coating clamp of SMD small-size product |
| CN206069986U (en) * | 2016-05-30 | 2017-04-05 | 苏州米盟智能装备科技有限公司 | The mask clamping fixture of electrode layer is formed for the sputter coating on zinc oxide ceramics substrate |
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Application publication date: 20160727 |
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| RJ01 | Rejection of invention patent application after publication |