CN105895751B - 一种提高发光效率的led外延片制备方法 - Google Patents
一种提高发光效率的led外延片制备方法 Download PDFInfo
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- CN105895751B CN105895751B CN201610277446.8A CN201610277446A CN105895751B CN 105895751 B CN105895751 B CN 105895751B CN 201610277446 A CN201610277446 A CN 201610277446A CN 105895751 B CN105895751 B CN 105895751B
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- quantum well
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- epitaxial growth
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 230000012010 growth Effects 0.000 claims abstract description 129
- 238000000926 separation method Methods 0.000 claims abstract description 70
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000003795 desorption Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201610277446.8A CN105895751B (zh) | 2016-04-27 | 2016-04-27 | 一种提高发光效率的led外延片制备方法 |
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CN201610277446.8A CN105895751B (zh) | 2016-04-27 | 2016-04-27 | 一种提高发光效率的led外延片制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105895751A CN105895751A (zh) | 2016-08-24 |
CN105895751B true CN105895751B (zh) | 2018-09-25 |
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CN201610277446.8A Active CN105895751B (zh) | 2016-04-27 | 2016-04-27 | 一种提高发光效率的led外延片制备方法 |
Country Status (1)
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CN (1) | CN105895751B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521258A (zh) * | 2009-03-27 | 2009-09-02 | 武汉华灿光电有限公司 | 一种提高发光二极管外量子效率的方法 |
CN102044598A (zh) * | 2009-10-19 | 2011-05-04 | 大连美明外延片科技有限公司 | 一种GaN基发光二极管外延片及其生长方法 |
CN103337567A (zh) * | 2013-06-20 | 2013-10-02 | 淮安澳洋顺昌光电技术有限公司 | 一种GaN基发光二极管外延片 |
CN104009140A (zh) * | 2014-03-24 | 2014-08-27 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
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2016
- 2016-04-27 CN CN201610277446.8A patent/CN105895751B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521258A (zh) * | 2009-03-27 | 2009-09-02 | 武汉华灿光电有限公司 | 一种提高发光二极管外量子效率的方法 |
CN102044598A (zh) * | 2009-10-19 | 2011-05-04 | 大连美明外延片科技有限公司 | 一种GaN基发光二极管外延片及其生长方法 |
CN103337567A (zh) * | 2013-06-20 | 2013-10-02 | 淮安澳洋顺昌光电技术有限公司 | 一种GaN基发光二极管外延片 |
CN104009140A (zh) * | 2014-03-24 | 2014-08-27 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制作方法 |
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