CN105895734A - 刻蚀图案套印高精度对位方法及装置 - Google Patents
刻蚀图案套印高精度对位方法及装置 Download PDFInfo
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- CN105895734A CN105895734A CN201610095279.5A CN201610095279A CN105895734A CN 105895734 A CN105895734 A CN 105895734A CN 201610095279 A CN201610095279 A CN 201610095279A CN 105895734 A CN105895734 A CN 105895734A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 39
- 239000010703 silicon Substances 0.000 claims abstract description 39
- 230000000007 visual effect Effects 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 16
- 238000009499 grossing Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 24
- 238000004587 chromatography analysis Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000007639 printing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610095279.5A CN105895734B (zh) | 2016-02-22 | 2016-02-22 | 刻蚀图案套印高精度对位方法及装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610095279.5A CN105895734B (zh) | 2016-02-22 | 2016-02-22 | 刻蚀图案套印高精度对位方法及装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105895734A true CN105895734A (zh) | 2016-08-24 |
CN105895734B CN105895734B (zh) | 2017-07-28 |
Family
ID=57014065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610095279.5A Active CN105895734B (zh) | 2016-02-22 | 2016-02-22 | 刻蚀图案套印高精度对位方法及装置 |
Country Status (1)
Country | Link |
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CN (1) | CN105895734B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275496A (ja) * | 1993-01-21 | 1994-09-30 | Nikon Corp | 位置合わせ方法 |
JP2000012433A (ja) * | 1998-06-23 | 2000-01-14 | Fujitsu Ltd | X線マスク、x線露光装置、x線露光方法、及び、x線転写歪測定方法 |
CN1841208A (zh) * | 2005-03-28 | 2006-10-04 | Asml荷兰有限公司 | 光刻装置、湿浸式投影装置和器件制造方法 |
CN1869819A (zh) * | 2005-05-26 | 2006-11-29 | 国际商业机器公司 | 用于光学临近修正的方法和系统 |
CN101025575A (zh) * | 2006-02-21 | 2007-08-29 | 株式会社Orc制作所 | 基板曝光装置及基板曝光方法 |
CN101529199A (zh) * | 2006-09-28 | 2009-09-09 | 株式会社尼康 | 线宽计测方法、像形成状态检测方法、调整方法、曝光方法以及设备制造方法 |
CN103454852A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | 一种掩膜版及套刻精度的测量方法 |
-
2016
- 2016-02-22 CN CN201610095279.5A patent/CN105895734B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275496A (ja) * | 1993-01-21 | 1994-09-30 | Nikon Corp | 位置合わせ方法 |
JP2000012433A (ja) * | 1998-06-23 | 2000-01-14 | Fujitsu Ltd | X線マスク、x線露光装置、x線露光方法、及び、x線転写歪測定方法 |
CN1841208A (zh) * | 2005-03-28 | 2006-10-04 | Asml荷兰有限公司 | 光刻装置、湿浸式投影装置和器件制造方法 |
CN1869819A (zh) * | 2005-05-26 | 2006-11-29 | 国际商业机器公司 | 用于光学临近修正的方法和系统 |
CN101025575A (zh) * | 2006-02-21 | 2007-08-29 | 株式会社Orc制作所 | 基板曝光装置及基板曝光方法 |
CN101529199A (zh) * | 2006-09-28 | 2009-09-09 | 株式会社尼康 | 线宽计测方法、像形成状态检测方法、调整方法、曝光方法以及设备制造方法 |
CN103454852A (zh) * | 2012-06-05 | 2013-12-18 | 中芯国际集成电路制造(上海)有限公司 | 一种掩膜版及套刻精度的测量方法 |
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Publication number | Publication date |
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CN105895734B (zh) | 2017-07-28 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |