CN105895687B - 一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法及GaN HEMT器件 - Google Patents
一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法及GaN HEMT器件 Download PDFInfo
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Abstract
本发明涉及的是一种基于微电子工艺，一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，具体实施步骤包括(1)生长高阻缓冲层/超晶格结构；(2)生长SiO2；(3)定义欧姆接触区域；(4)制备Ni刻蚀阻挡层；(5)刻蚀SiO、超晶格层；(6)去除Ni刻蚀阻挡层；(7)生长AlGaN/GaN异质结；(8)去除SiO2；(9)定义欧姆接触区域；(10)蒸发/剥离/低温退火形成欧姆接触。本发明针对现有GaN HEMT欧姆接触金属形貌差、接触电阻率高等缺点，提出在欧姆接触区域引入超晶格结构解决上述问题，具有(1)接触电阻率低；(2)欧姆接触金属表面形貌质量高的优点。
Description
技术领域
本发明属于半导体器件制备技术领域，尤其是一种GaN HEMT(氮化镓高电子迁移率晶体管)上利用刻蚀和扩散技术实现降低欧姆接触退火温度的方法。
背景技术
GaN作为第三代半导体材料在功率器件中的应用受到了广泛的关注，其中基于AlGaN/GaN异质结结构的HEMT具有高频、高功率密度以及高工作温度的优点，是固态微波功率器件和功率电子器件的发展方向。优异的欧姆接触是实现高性能GaN器件的基础，包括低的欧姆接触电阻率和良好的欧姆接触形貌。Ti/Al/Ni/Au是应用最广泛的GaN HEMT欧姆接触金属结构之一，通过合金与GaN形成欧姆接触。但传统欧姆合金温度一般在800℃以上。由于金属Al的熔点为660.4℃，因此合金过程中，Al处于熔融状态；并且部分Al会与Au形成AlAu2或AlAu4等晶粒颗状物，使得欧姆金属表面粗糙。对于功率电子器件，粗糙的欧姆接触边缘会导致尖峰电场的出现，从而使得器件击穿特性下降。对于微波器件，还会引起电流分布不均匀以及高的信号衰减。器件在大电流工作时，还可能导致欧姆接触金属表面凸起处开裂，从而影响器件可靠性。
故而，需要一种新的技术方案可以降低欧姆接触金属外溢以及金属体系中合金的形成，从而提高欧姆金属表面平整度以及边缘质量。
发明内容
本发明针对现有GaN HEMT器件欧姆制作工艺中采用高温退火导致欧姆接触金属表面形貌差，的问题，提供一种基于刻蚀和扩散技术降低GaN HEMT器件欧姆接触退火温度的方法，该方法能有效降低GaN HEMT欧姆接触退火温度，提高欧姆接触金属表面形貌，可广泛应用于各类GaN HEMT器件的研制生产中。
为达到上述目的，本发明可采用如下技术方案：
一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，包括以下步骤：
(1)、在半绝缘衬底上依次外延生长出高阻缓冲层以及超晶格结构；
(2)、在超晶格结构表面生长一层SiO2掩模层；
(3)、在SiO2掩模层表面形成欧姆接触区域；
(4)、在欧姆接触区域形成Ni刻蚀阻挡层；
(5)、利用Ni刻蚀阻挡层作为刻蚀掩模而刻蚀SiO2掩模层及刻蚀超晶格结构，露出高阻缓冲层；
(6)、去除Ni刻蚀阻挡层；
(7)、在露出的高阻缓冲层区域外延生长AlGaN/GaN异质结；
(8)、去除SiO2掩模层；
(9)、形成欧姆接触区域；
(10)、在欧姆接触区域形成Ti/Al基欧姆接触金属，利用低温合金的方法获得欧姆接触。
有益效果：(1)在欧姆区域引入了i-AlN/n-GaN或i-AlGaN/n-GaN超晶格结构，有利于提升Si杂质在材料中的离化率，提升掺杂浓度，有利于降低欧姆接触的合金温度，并利于形成低接触电阻的欧姆接触；(2)将AlGaN/GaN异质结生长放在GaN掺杂结构之后生长，可以降低后续高温生长工艺对AlGaN/GaN异质结性能的影响，避免了在二次生长中无法采用低温获得高质量掺杂外延层的问题；(3)欧姆接触电阻率降低，欧姆接触金属表面形貌提高。
而为达到上述目的，本发明还提供一种GaN HEMT器件的技术方案：
GaN HEMT器件，包括板绝缘衬底、自板绝缘衬底延生长出的高阻缓冲层以及超晶格结构；还包括在高阻缓冲层区域外延生长AlGaN/GaN异质结以及形成于AlGaN/GaN异质结表面的Ti/Al基欧姆接触金属。
有益效果：在刻蚀欧姆接触通孔时采用SiCl4刻蚀，增加了材料中Si的浓度；且采用通孔形式进行Si扩散，工艺容差大；并且在退火实现欧姆接触时降低了欧姆合金的至500-600℃温度，实现低温合金欧姆接触工艺可以降低欧姆接触金属外溢以及金属体系中合金的形成，从而提高欧姆金属表面平整度以及边缘质量，从而有效的提高了欧姆接触表面形貌。
附图说明
图1为本发明GaN HEMT器件结构示意图。
图2为再生长GaN HEMT欧姆接触工艺步骤(1)流程图。
图3为再生长GaN HEMT欧姆接触工艺步骤(2)流程图。
图4为再生长GaN HEMT欧姆接触工艺步骤(3)流程图。
图5为再生长GaN HEMT欧姆接触工艺步骤(4)流程图。
图6为再生长GaN HEMT欧姆接触工艺步骤(5)流程图。
图7为再生长GaN HEMT欧姆接触工艺步骤(6)流程图。
图8为再生长GaN HEMT欧姆接触工艺步骤(7)流程图。
图9为再生长GaN HEMT欧姆接触工艺步骤(8)流程图。
图10为再生长GaN HEMT欧姆接触工艺步骤(9)流程图。
图11为再生长GaN HEMT欧姆接触工艺步骤(10)流程图。
具体实施方式
下面结合附图进一步描述本发明的技术方案；
本发明是一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，包括生长高阻缓冲层/超晶格结构；生长SiO2；定义欧姆接触区域；制备Ni刻蚀阻挡层；刻蚀SiO、超晶格层；去除Ni刻蚀阻挡层；生长AlGaN/GaN异质结；去除SiO2；定义欧姆接触区域；蒸发/剥离/低温退火形成欧姆接触。具体方法如下：
(1)在半绝缘SiC衬底1上依次外延生长GaN层高阻缓冲层2、i-AlN/n-GaN超晶格结构3，如图2所示。其中，所述半绝缘衬底1为SiC或Si或蓝宝石衬底。所述高阻缓冲层2为GaN层或AlGaN层。所述超晶格结构3为i-AlN(本征AlN)/n-GaN(n型掺杂GaN)超晶格结构或i-AlGaN(本征AlGaN)/n-GaN(n型掺杂GaN)超晶格结构。
(2)采用PECVD在样品表面生长一层SiO2掩模层4，如图3所示；
(3)通过常规光刻、显影工艺形成欧姆接触区域5，如图4所示；
(4)通过常规蒸发、剥离工艺在欧姆接触区域5形成Ni刻蚀阻挡层6，如图5所示；
(5)利用Ni刻蚀阻挡层6作为刻蚀掩模，利用ICP刻蚀工艺，采用氟基气体刻蚀SiO2掩模层4，采用氯基气体刻蚀i-AlN/n-GaN超晶格结构3，露出GaN层高阻缓冲层2，如图6所示；
(6)利用Ni刻蚀液，去除Ni刻蚀阻挡层6，如图7所示；
(7)在露出的高阻缓冲层2区域外延生长AlGaN/GaN异质结7，如图8所示；
(8)利用HF缓冲液去除SiO2掩模层4，如图9所示；
(9)通过常规光刻、显影工艺形成欧姆接触区域5，如图10所示；
(10)通过常规蒸发、剥离工艺在欧姆接触区域5形成Ti/Al基欧姆接触金属8，利用低温合金的方法获得欧姆接触，所述低温合金为退火温度为300℃-500℃，在本实施方式中优选的合金温度为450℃，如图11所示。
而请再结合图1所示，在本发明公开的上述基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法实施例的基础上，本发明还公开了一种可以采用上述方法制成的一种GaN HEMT器件的实施例。
该GaN HEMT器件包括板绝缘衬底1、自板绝缘衬底延生长出的高阻缓冲层2以及超晶格结构3；还包括在高阻缓冲层2区域外延生长AlGaN/GaN异质结7以及形成于AlGaN/GaN异质结7表面的Ti/Al基欧姆接触金属8。其中，所述半绝缘衬底1为SiC或Si或蓝宝石衬底。所述高阻缓冲层2为GaN层或AlGaN层。所述超晶格结构3为i-AlN/n-GaN超晶格结构或i-AlGaN/n-GaN超晶格结构。
该GaN HEMT器件中，在欧姆区域引入了i-AlN/n-GaN或i-AlGaN/n-GaN超晶格结构，有利于提升Si杂质在材料中的离化率，提升掺杂浓度，有利于降低欧姆接触的合金温度，并利于形成低接触电阻的欧姆接触。从而在制造过程中，欧姆接触电阻率降低，欧姆接触金属表面形貌提高。本实施方式的GaN HEMT器件可以采用本发明中公开的方法制作，也可以采用其他的方式制作，结构符合本实施例中的GaN HEMT器件均可。
另外，本发明的具体实现方法和途径很多，以上所述仅是本发明的优选实施方式。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。本实施例中未明确的各组成部分均可用现有技术加以实现。
Claims (8)
1.一种基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，其特征是，包括以下步骤：
(1)、在半绝缘衬底(1)上依次外延生长出高阻缓冲层(2)以及超晶格结构(3)；
(2)、在超晶格结构(3)表面生长一层SiO2掩模层(4)；
(3)、在SiO2掩模层(4)表面形成欧姆接触区域(5)；
(4)、在欧姆接触区域(5)形成Ni刻蚀阻挡层(6)；
(5)、利用Ni刻蚀阻挡层(6)作为刻蚀掩模而刻蚀SiO2掩模层(4)及刻蚀超晶格结构(3)，露出高阻缓冲层(2)；
(6)、去除Ni刻蚀阻挡层(6)；
(7)、在露出的高阻缓冲层(2)区域外延生长AlGaN/GaN异质结(7)；
(8)、去除SiO2掩模层(4)；
(9)、形成欧姆接触区域(5)；
(10)、在欧姆接触区域(5)形成Ti/Al基欧姆接触金属(8)，利用低温合金的方法获得欧姆接触。
2.如权利要求1所述的基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，其特征是，在步骤(1)中，所述半绝缘衬底(1)为SiC或Si或蓝宝石衬底。
3.如权利要求1所述的基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，其特征是，在步骤(1)、(5)、(7)中，所述高阻缓冲层(2)为GaN层或AlGaN层。
4.如权利要求1所述的基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，其特征是，在步骤(1)、(5)中，所述超晶格结构(3)为i-AlN/n-GaN超晶格结构或i-AlGaN/n-GaN超晶格结构。
5.如权利要求1所述的基于再生长技术降低GaN HEMT器件欧姆接触电阻的方法，其特征是，在步骤(10)中，所述低温合金为退火温度为300℃-500℃。
6.一种GaN HEMT器件，其特征是，包括半绝缘衬底(1)、自半绝缘衬底外延生长出的高阻缓冲层(2)以及超晶格结构(3)；还包括在高阻缓冲层(2)区域外延生长AlGaN/GaN异质结(7)以及形成于超晶格结构(3)上方的的Ti/Al基欧姆接触金属(8)；所述超晶格结构(3)为i-AlN/n-GaN超晶格结构或
i-AlGaN/n-GaN超晶格结构。
7.如权利要求6所述的GaN HEMT器件，其特征是，所述半绝缘衬底(1)为SiC或Si或蓝宝石衬底。
8.如权利要求7所述的GaN HEMT器件，其特征是，所述高阻缓冲层(2)为GaN层或AlGaN层。
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Application publication date: 20160824 Assignee: Nanjing Zhongdian Core Valley High Frequency Device Industry Technology Research Institute Co., Ltd. Assignor: China Electronics Technology Group Corporation No.55 Research Institute Contract record no.: X2020980000164 Denomination of invention: Regrowth technology-based method for reducing ohmic contact resistance of GaN HEMT device, and GaN HEMT device Granted publication date: 20190305 License type: Common License Record date: 20200119 |