CN105870886A - Short-circuit protection device of solid-state switch - Google Patents

Short-circuit protection device of solid-state switch Download PDF

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Publication number
CN105870886A
CN105870886A CN201610190216.8A CN201610190216A CN105870886A CN 105870886 A CN105870886 A CN 105870886A CN 201610190216 A CN201610190216 A CN 201610190216A CN 105870886 A CN105870886 A CN 105870886A
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China
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circuit
short
solid
protection
state switch
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CN105870886B (en
Inventor
叶辰之
李霄
付炜亮
李福生
王云
杨建波
曹碧颖
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Shanghai Electric Group Corp
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Shanghai Electric Group Corp
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/22Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices
    • H02H7/222Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices for switches
    • H02J13/0006
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation

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  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention belongs to the technical field of power electronics, and particularly relates to a short-circuit protection device of a solid-state switch. The short-circuit protection device of the solid-state switch comprises a power device switch unit, an intelligent detection and protection unit and a buffer circuit unit, wherein the power device switch unit is connected to a main circuit system and is used for achieving on/off function of a main circuit; the intelligent detection and protection unit comprises a near-end short-circuit protection module and a remote-end short-circuit protection module and is used for sending out a shut-off signal to the power device switch unit when in a near-end short-circuit or a remote-end short-circuit; and the buffer circuit unit is connected to two ends of the power device switch unit and is used for absorbing over-voltages generated at two ends when the short-circuit is shut off and the power device switch unit is turned off. A corresponding solving method is provided from three aspects of near-end short-circuit protection, remote-end short-circuit protection, over-voltage protection and the like; the condition that the solid-state switch can be safely and reliably turned off under different short-circuit conditions is ensured; meanwhile, no maloperation of the solid-state switch in an intense electromagnetic interference environment is ensured; the short-circuit protection device of the solid-state switch has good reliability; and the short-circuit protection of the solid-state switch can be effectively achieved.

Description

A kind of short-circuit protection of solid-state switch
Technical field
The invention belongs to electric and electronic technical field, particularly relate to a kind of short-circuit protection.
Background technology
Along with the fast development of power system, modern power systems faces a series of new contradiction and problem. A large amount of accesses of distributed energy, a large amount of appearance of microgrid, the speed of action of switch is proposed increasingly High requirement.Traditional mechanical switch speed of action is slow, arc extinguishing difficulty, in supper-fast on-load switch, limit Stream chopper, the occasion higher to switching speed requirements such as seamless switching switch, it is increasingly difficult to suitable Should.Solid-state switch power electronic devices instead of traditional mechanical switch, is to utilize power electronics device Part, as the contactless switching device of switch module, has and cut-offs speed soon, and silent, without electric arc, longevity The advantages such as life is long, but with IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar Transistor npn npn) be that the power electronic devices of representative is applied to solid-state switch field, exist shove ability and The problems such as voltage endurance capability difference, due to drawbacks described above so that solid-state switch can not have when short circuit occurs Effect ground protection, it is easy to be damaged.
Summary of the invention
For above technical problem, the present invention provides the short-circuit protection of a kind of solid-state switch, to solve The defect that the solid-state switch of prior art can not effectively be protected when short circuit occurs;
Concrete technical scheme is as follows:
A kind of short-circuit protection of solid-state switch, wherein, including:
Power device switch element, is connected in a main circuit system, for realizing the break-make merit of main circuit Energy;
Intelligent Measurement and protected location, protect module including a near-end short circuit protection module and a far end short, In order to the short circuit of described power device switch element generation near-end to be detected or during far end short to described power device Part switch element sends a cut-off signals;
Buffering circuit unit, is connected to the two ends of described power device switch element, is used for absorbing short circuit pass The overvoltage that when described power device switch element turns off time disconnected, both sides produce.
The short-circuit protection of above-mentioned solid-state switch, described near-end short circuit protection module includes,
One diode, described diode is connected between a reference C point and a saturation voltage drop test point, institute State and be connected with the negative electrode of described diode with reference to C point;
One anti-clutter circuit, is connected between described diode and described saturation voltage drop test point, is used for pressing down Make the impact on described saturation voltage drop test point of the described high-frequency interferencing signal with reference to C point, described with reference to C Point is drawn from described power device switch element.
The short-circuit protection of above-mentioned solid-state switch, described anti-clutter circuit includes:
One stabilivolt, is connected between described saturation voltage drop test point and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity at described stabilivolt two ends by one and is series at described With reference to the 4th resistance composition between C point and described saturation voltage drop test point.
The short-circuit protection of above-mentioned solid-state switch, described far end short protection module includes:
Current sensor, is connected in the circuit branch at described power device switch element place, is used for feeling Flow measurement is through the current signal of described power device switch element;
Modulate circuit, is connected with described current sensor, for the electricity detected by described current sensor Stream signal is converted to corresponding current sampling data;
Comparison circuit, is connected with described modulate circuit, for the current amplitude according to described current sampling data And/or the climbing of described current sampling data determines whether short circuit generation;
CPLD controller, is connected with described comparison circuit, produces according to the comparative result of described comparison circuit Raw execution timing and calculating, to produce described cut-off signals.
The short-circuit protection of above-mentioned solid-state switch, described comparison circuit includes:
First comparator, for comparing described current sampling data and a first threshold, and in described A high level signal is produced to drive described CPLD controller when current sampling data is more than described first threshold Start timing;
Second comparator, for being more than the Second Threshold of described first threshold to described current sampling data and one Compare, and when described current sampling data is more than described Second Threshold, produce another high level signal To drive described CPLD controller to stop timing;
3rd comparator, for comparing, in institute described current sampling data and a current protection threshold value State current sampling data and start timing more than during described current protection threshold value with the described CPLD controller of driving.
The short-circuit protection of above-mentioned solid-state switch, described comparison circuit also includes that a threshold value arranges circuit, For described first threshold, described Second Threshold and described current protection threshold value are configured.
The short-circuit protection of above-mentioned solid-state switch, described buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor.
The short-circuit protection of above-mentioned solid-state switch, described buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor;
Second diode, is parallel to the two ends of described first resistance.
The short-circuit protection of above-mentioned solid-state switch, described power device switch element uses based on IGBT Anti-series structure or coordinate IGBT structure or based on IGBT inverse parallel structure based on diode rectification.
Beneficial effect: above technical scheme proximally short-circuit protection, far end short protection, overvoltage protection etc. Three aspects propose corresponding solution, it is ensured that solid-state switch can complete under different Short-circuit Working Conditions Safe and reliable shutoff, ensure that solid-state switch does not occur malfunction in the environment of strong electromagnetic simultaneously, There is good reliability, it is possible to be effectively realized the short-circuit protection of solid-state switch.
Accompanying drawing explanation
Fig. 1 is assembly of the invention structural representation;
Fig. 2 is the near-end short circuit protection module schematic diagram of the present invention;
Fig. 3 is the far end short protection module diagram of the present invention;
Fig. 4 is the electrical block diagram of a kind of specific embodiment of the present invention;
Fig. 5 is the electrical block diagram of the another kind of specific embodiment of the present invention;
Fig. 6 is the electrical block diagram of another specific embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making The every other embodiment obtained on the premise of going out creative work, broadly falls into the scope of protection of the invention.
It should be noted that in the case of not conflicting, the embodiment in the present invention and the spy in embodiment Levy and can be mutually combined.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as the present invention's Limit.
The ability of shoving refers to that power electronic devices tolerates the ability of big electric current, and solid-state switch is when short circuit occurs The short circuit current of more than 10 times of rated current can be flow through, and power electronic devices can only tolerate several times in short-term Rated current;If can not turn off in time after short circuit occurs, power device can be caused to lose efficacy, switch loses Spirit, causes serious consequence.Voltage endurance capability then refers to that power electronic devices bears the ability of overvoltage, opens Closing device when off, switch both sides can produce overvoltage.This overvoltage size is mainly by two factors Determining, one is the value of circuit emotional resistance, another one be off during the rate of change of electric current.Line The emotional resistance on road is the biggest, and in turn off process, the rate of change of electric current is the biggest, and overvoltage is the biggest.Electric power electricity As switch series in the line, the emotional resistance on circuit is bigger for sub-device, simultaneously because power electronics The speed that device turns off, the current changing rate in whole turn off process is very big, therefore closes at switch Can produce the highest overvoltage at power electronic devices two ends time disconnected, power electronic devices bears overvoltage Ability is the most weak, only needs a due to voltage spikes the shortest to be possible to damage device, causes switch failure. These defects existed due to power electronic devices, solid-state switch is protected effectively at short circuit generation needs Protecting, guarantee solid-state switch, while turning off, will not be damaged.
Reference Fig. 1, the short-circuit protection of a kind of solid-state switch, including:
Power device switch element 1, is connected in a main circuit system, for realizing the break-make of main circuit Function;
Intelligent Measurement and protected location 2, protect including a near-end short circuit protection module 21 and a far end short Module 22, in order to detect that power device switch element 1 occurs near-end short circuit or during far end short to power Devices switch unit 1 sends a cut-off signals;
Buffering circuit unit 3, is connected to the two ends of power device switch element 1, for absorption dynamometer The overvoltage that when part switch element turns off, both sides produce.
According to the distance of short dot range switch distance, short circuit can be divided into near-end short circuit and far end short. Near-end short circuit represents that the point of short circuit generation is close with solid-state switch, the impedance ratio of the circuit of whole short-circuit loop Less, there is the climbing of after current very greatly in short circuit, generally higher than 50A/us.Far end short represents short circuit The point occurred is away from solid-state switch, and the line impedance of whole short-circuit loop is bigger, and short circuit occurs after current Climbing is smaller compared to near-end short circuit, typically at several A/us to 50A/us.Open for existing solid-state Close defect existing when short circuit occurs and the fault type of short circuit, the Intelligent Measurement of the present invention and protection Unit includes far end short protection module and near-end short circuit protection module, in order to detect that power device switchs A cut-off signals is sent to power device switch element when the short circuit of unit generation near-end or far end short;Can Ensure that solid-state switch can be protected under different Short-circuit Working Conditions effectively.
The short-circuit protection of above-mentioned solid-state switch, near-end short circuit protection module 21 may include that
One diode D1, diode D1 are connected to one with reference to C point and a saturation voltage drop test point DESAT Between, it is connected with the negative electrode of diode D1 with reference to C point;
One anti-clutter circuit 211, is connected between diode D1 and saturation voltage drop test point DESAT, For suppressing the impact on saturation voltage drop test point DESAT of high-frequency interferencing signal with reference to C point, reference C point is drawn from power device switch element 1.
The short-circuit protection of above-mentioned solid-state switch, anti-clutter circuit 211 can be as in Fig. 2 dotted line frame Shown in, including:
One stabilivolt ZD1, is connected between saturation voltage drop test point DESAT and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity C3 at stabilivolt ZD1 two ends by one and is series at With reference to the 4th resistance R4 composition between C point and saturation voltage drop test point DESAT.
Tradition IGBT moves back saturated protection middle controller by detection saturation voltage drop test point DESAT point Voltage judges whether short circuit occurs.Rise rapidly with reference to C point current potential when short circuit occurs, saturation voltage drop The current potential of test point DESAT point rises simultaneously, thinks generation when exceeding controller after certain threshold value Short circuit, turns off pulse and protects.Owing to solid-state switch application scenario electromagnetic environment is relatively more severe, solid-state The current potential switching normal reference C point also there will be the due to voltage spikes of high frequency, when spike occurs, The current potential of saturation voltage drop test point DESAT point occurs spike the most therewith, and controller is just mistakenly considered short circuit and sends out Give birth to and protect, cause solid-state switch misoperation.After adding anti-clutter circuit, with reference to the electricity of C point Pressure signal is by wave filter, and the disturbing signal of high frequency is filtered out, and restrained effectively and does with reference to C point high frequency Disturb the signal impact on saturation voltage drop test point DESAT point current potential, it is ensured that the reliability that short circuit judges. The stabilivolt ZD1 the most in parallel with electric capacity C3 can stablize the electricity of saturation voltage drop test point DESAT point Pressure, prevents the overtension of DESAT point from causing damage controller.
Near-end short circuit current climbing is big, and general current sensor is difficult to detect, and needs to utilize The saturated characteristic of moving back of IGBT detects the generation of short circuit and protects.This guard method is comparatively close to Protection during IGBT shoot through in conventional current transformer.The protection speed that IGBT moves back saturated protection is fast, but It is easier to be disturbed by electromagnetic signal, compared to the application scenario of current transformer, the application of solid-state switch Occasion electromagnetic environment is more severe, moves back, with traditional, the problem that saturation protecting method there will be protection misoperation. Traditional current transformer protection, even if there is the problem protected by mistake, only there will be shutdown self-inspection, does not have assorted Ill effect.But in the application scenario of solid-state switch, misoperation can bring a series of use frequently Electricity problem, reduces the quality of power supply, affects stablizing of electrical network, directly affects what solid-state switch normally worked Reliability.The present invention is directed to tradition IGBT move back saturated protection and deposited on solid-state switch near-end short-circuit protection Problem, it is proposed that the near-end short-circuit protection method of a kind of electromagnetism interference.The method can be effectively Solution conventional near-end short-circuit protection is easily subject to electromagnetic interference and causes the problem of solid-state switch misoperation, can Ensure that solid-state switch has the protective capability of near-end electric current, also can guarantee that solid-state switch not malfunction, it is ensured that The reliability of solid-state switch.
The short-circuit protection of above-mentioned solid-state switch, far end short protection module 22 as shown in Figure 3, May include that
Current sensor 220, is connected in the circuit branch at power device switch element 1 place, is used for Sensing flows through the current signal of power device switch element 1;
Modulate circuit 221, is connected with current sensor 220, for the electricity detected by current sensor Stream signal is converted to corresponding current sampling data;
Comparison circuit 223, is connected with modulate circuit 221, for the current amplitude according to current sampling data And/or the current-rising-rate of current sampling data i determines whether short circuit generation;
CPLD controller 224, is connected with comparison circuit 223, according to the comparison knot of comparison circuit 223 Fruit produces and performs timing and calculating, to produce cut-off signals.
The short-circuit protection of above-mentioned solid-state switch, comparison circuit includes:
First comparator, for current sampling data Is and first threshold ILCompare, and in electricity Stream sampled value Is is more than first threshold ILTime produce a high level signal to drive CPLD controller 224 Start timing;
Second comparator, for being more than first threshold I to current sampling data Is andLSecond Threshold IH Compare, and in current sampling data Is more than Second Threshold IHTime produce another high level signal to drive Dynamic CPLD controller 224 stops timing;
3rd comparator, for current sampling data Is and current protection threshold value ImaxCompare, in Current sampling data Is is more than current protection threshold value ImaxTime with drive CPLD controller 224 start timing.
The short-circuit protection of above-mentioned solid-state switch, comparison circuit also includes that a threshold value arranges circuit 2231, for first threshold IL, Second Threshold IHAnd current protection threshold value ImaxIt is configured.
In the distal embolic protection short circuit protection module 22 of the present invention, current sensor 220 detects current signal, Compare after being converted to suitable signal by modulate circuit 221 and incoming CPLD controller 224 Carrying out signal processing, CPLD controller 224 is when judgement detects that short circuit occurs, to solid-state switch Send cut-off signals to complete to turn off.
The specific works process of above-mentioned comparison circuit is as follows, when current sampling data Is is more than first threshold IL Time, comparison circuit 223 sends a road high level signal to CPLD controller 224, simultaneously CPLD control Device 224 processed starts timing;When current sampling data Is is more than Second Threshold IHTime, comparison circuit 223 Another road high level signal is given to stop timing to CPLD controller 224, CPLD controller 224, meter Time time be calculated as Ts.The computational methods of current-rising-rate di/dt are (IH-IL)/T, wherein Second Threshold IH, First threshold ILFor artificial setting value, therefore the value by obtaining Ts can obtain a corresponding electric current Climbing ks.Current-rising-rate ka and the kb of correspondence in like manner can be obtained by being manually set Ta and Tb. When current-rising-rate ks of detection meets the condition of ka < ks < kb, namely detection time Ts is full Foot Tb < Ts < Ta, CPLD controller 224 is thought generation far end short, is sent pass to solid-state switch Break signal, i.e. realizes judging far end short according to current-rising-rate.
Current sampling data Is is compared by above-mentioned comparison circuit 223 with current protection value Imax, as Really current sampling data Is is more than current protection value Imax, comparison circuit one high level of transmission to CPLD Controller 224, CPLD controller 224 starts timing simultaneously.Electric current once occurs in timing course Sampled value Is is less than the situation of current protection value Imax, and CPLD controller 224 timing terminates at once, Wait that next high level arrives the most again to count.When timing time Ts is more than setting value Tb, namely It is consistently greater than current protection value Imax at Tb current sampling data Is during this period of time, crosses stream and exist all the time, this Time CPLD controller 224 judge that far end short occurs, send cut-off signals to solid-state switch.Wherein Tb value is for being manually set, extraneous dry by avoiding on the premise of arranging rational Tb value and can ensure that quick-action Disturb the malfunction caused, i.e. judge far end short according to current amplitude.
Far end short current-rising-rate is relatively low, and the rising characteristic of electric current is similar to the situation of overload.Pass The overload protection of system is realized by software, samples current signal by current sensor, and software leads to Cross judgement current signal and send shutoff instruction.The application scenario electromagnetic interference of switch is relatively big, current sensor It is the biggest to there is burr in collection signal out.If using single-point to judge, although to ensure that judgement Rapidity, but also result in erroneous judgement simultaneously, cause the misoperation of switch;If using multiple spot to judge, soft Part is limited by the cycle time of signal sampling, and whole fault determining time can be caused long, on short circuit current It is raised to the biggest value, causes the infringement of solid-state switch.The present invention is directed to tradition overload protection and be applied to solid-state The problem of switch, it is proposed that a kind of guard method based on hardware circuit.Utilize hardware circuit chip CPLD Controller, can carry out dual judgement to the climbing of the amplitude of electric current and electric current, both can guarantee that judgement Rapidity, also can guarantee that the reliability of judgement, it is possible to efficiently solve solid-state switch and send out at far end short Protection problem time raw.The method judging far end short in the present invention is current-rising-rate and current amplitude Dual judgement.Wherein be judged as main with current-rising-rate, current amplitude is judged as auxiliary.Risen by electric current Far end short can be made a distinction by the judgement of rate significantly with situations such as near-end short circuit, overloads.Once cannot Correctly being judged by current-rising-rate, current amplitude judges to have an effect as a kind of security mechanism, Ensure that solid-state switch turns off under the electric current that can turn off.Just because of this judgment mechanism, the guarantor of the present invention The situation such as electromagnetic noise, overload can be distinguished by maintaining method effectively with far end short, it is ensured that opens Close the not malfunction when normal work, it is ensured that the reliability of switch.Owing to CPLD controller is at a high speed , there is not the restriction in sampling period in hardware circuit compared with software, the speed of detection is more faster than software, The time that detection judges can be greatly shortened, it is ensured that solid-state switch completed to close electric current is relatively low when Disconnected, effectively ensure the solid-state switch safe shutdown when far end short.
The short-circuit protection of above-mentioned solid-state switch, buffering circuit unit 3 can include electric capacity, two poles Pipe, resistance, varistor etc., it is possible to absorb the overvoltage that when short circuit turns off, switch both sides produce.As Fig. 4, Shown in Fig. 6, buffering circuit unit can include,
Varistor MOV, is connected to the two ends of power device switch element 1;
The branch road of the first resistance Rs and the first electric capacity Cs series connection, in parallel with varistor MOV.
In traditional current transformer occasion, the loop emotional resistance at IGBT place is less, and IGBT turns off Be all the electric current of below rated current, cut-off current is less, and the shutoff voltage produced when therefore turning off is relatively Little, just can suppress to turn off the overvoltage produced with simple c-type or RC type buffer circuit.But Solid-state switch occasion, IGBT place circuit emotional resistance is very big, and IGBT turns off when short circuit occurs Be the short circuit current far above rated current, cut-off current is the biggest.Therefore the energy that in circuit, inductance stores Amount is very big, cannot absorb fully with traditional buffer circuit, causes the generation turning off overvoltage.Due to The proof voltage ability of IGBT is the most weak, causes solid-state switch during turning off short circuit current because closing Disconnected overtension and be damaged.The present invention is directed to solid-state switch occasion IGBT short circuit and turn off overvoltage relatively High problem, adds varistor on the basis of traditional buffer circuit, for perception in absorption circuit The energy that impedance produces, in combination with the technology of slow shutoff, it is ensured that solid-state switch is turning off short circuit electricity Overvoltage protection during stream.
The short-circuit protection of above-mentioned solid-state switch, buffering circuit unit can also be as it is shown in figure 5, wrap Include one second diode Ds1, be parallel to the two ends of the first resistance Rs.When IGBT turns off, the two or two pole Pipe Ds1 turns on, and owing to electric capacity both end voltage can not be suddenlyd change, voltage slowly rises;When voltage exceedes pressure-sensitive During resistive voltage, varistor turns on the energy on further absorption circuit inductance, and IGBT two ends Voltage is restricted to below the clamp voltage of varistor, it is ensured that IGBT two ends electricity in whole turn off process Press not overvoltage, it is ensured that solid-state switch safety in short circuit turn off process.Except buffer circuit, this The bright method applying slow shutoff during turning off, by improving gate leve in IGBT turn off process Voltage, the turn-off speed of IGBT when having delayed to turn off short circuit current, it is possible to effectively reduce the change of electric current Rate, reduces the overvoltage turned off.
The power device switch element 1 of the present invention is mainly by IGCT, IGBT, IGCT (Integrated Gate Commutated Thyristors, integrated gate commutated thyristor) etc. power electronic devices composition, Realize the on-off function of whole main circuit.Short-circuit protection below in conjunction with the present invention is used for several solid-states Switch topology is combined explanation:
The first specific embodiment, as shown in Figure 4, is applied in three-phase four-wire system, wherein power Devices switch unit 1 uses anti-series structure based on IGBT, and energy can be with two-way flow.Buffering electricity Road unit is made up of the first resistance Rs, the first electric capacity Cs and varistor MOV.Near-end short circuit is protected Protecting the realization of module 21 as shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the One resistance Rs charges to the first electric capacity Cs, because capacitance voltage can not suddenly change, limits IGBT The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Anti-series structure based on IGBT includes:
First IGBT device IGBT1, the colelctor electrode of the first IGBT device IGBT1 concatenates with emitter stage In a phase line of three-phase four-wire system;
Second IGBT device IGBT2, the emitter stage of the second IGBT device IGBT2 and an IGBT The emitter stage of device IGBT1 connects, and forms an anti-series type structure with the first IGBT device.
The second specific embodiment: as it is shown in figure 5, be applied in three-phase four-wire system, wherein power Devices switch unit 1 uses and coordinates IGBT structure based on diode rectification, and energy can be with two-way flow. Buffering circuit unit is by the first resistance Rs, the first electric capacity Cs, the second diode Ds1 and varistor MOV forms.Buffer circuit is made up of resistance, electric capacity, diode and varistor.Near-end short circuit As shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3 in the realization of protection module 21.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the Two diode Ds charge to the first electric capacity Cs, because capacitance voltage can not suddenly change, limit IGBT The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Based on diode rectification coordinate IGBT structure include: bridge rectifier, by diode D1, two Pole pipe D2, diode D3 and diode D4 composition;The negative electrode of diode D1 and diode D2 connects, The anode of diode D2 is connected with the negative electrode of diode D3, diode D3 and the anode of diode D4 Connecting, the anode of diode D1 is connected with the negative electrode of diode D4;
3rd IGBT device IGBT, the colelctor electrode of the 3rd IGBT device and diode D1 and diode The negative electrode of D2 connects, the emitter stage of the 3rd IGBT device and the anode of diode D3 and diode D4 Anode connect.
The third specific embodiment: as shown in Figure 6, is applied in three-phase four-wire system, wherein power Devices switch unit 1 uses based on IGBT inverse parallel structure, and energy can be with two-way flow;Buffer circuit Unit is made up of the first resistance Rs, the first electric capacity Cs and varistor MOV.Near-end short-circuit protection As shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3 in the realization of module 21.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the One resistance Rs charges to the first electric capacity Cs, because capacitance voltage can not suddenly change, limits IGBT The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Above-mentioned includes based on IGBT inverse parallel structure:
4th IGBT device IGBT4, the colelctor electrode of the 4th IGBT device IGBT4 concatenates with emitter stage In phase line;
5th IGBT device IGBT5, with the 4th IGBT device IGBT4 inverse parallel, the 4th IGBT The emitter stage of device IGBT4 and the colelctor electrode of the 5th IGBT device IGBT5 connect, the 4th IGBT device The colelctor electrode of part and the emitter stage of the 5th IGBT device connect.
The present invention can suppress the electromagnetic interference interference to near-end short-circuit detecting effectively, it is ensured that solid-state is opened Close energy trouble-free operation in the case of nominal situation, substantially increase the reliability of solid-state switch.Use with hard The far end short guard method of part circuit realiration, it is possible to take into account rapidity and the reliability of protection, significantly carry The high performance of solid-state switch far end short protection.And propose and a kind of on buffer circuit, add pressure-sensitive electricity Resistance, and use the slow method turned off, it is possible to the mistake that suppression solid-state switch produces when short circuit turns off effectively Voltage, improves the reliability that solid-state switch short circuit turns off, it is ensured that peace when solid-state switch short circuit turns off Entirely.
These are only preferred embodiment of the present invention, not thereby limit embodiments of the present invention and protection Scope, to those skilled in the art, it should can appreciate that all utilization description of the invention and figure Show the equivalent done by content and the scheme obtained by obvious change, all should be included in this In the protection domain of invention.

Claims (9)

1. the short-circuit protection of a solid-state switch, it is characterised in that including:
Power device switch element, is connected in a main circuit system, for realizing the break-make merit of main circuit Energy;
Intelligent Measurement and protected location, protect module including a near-end short circuit protection module and a far end short, In order to the short circuit of described power device switch element generation near-end to be detected or during far end short to described power device Part switch element sends a cut-off signals;
Buffering circuit unit, is connected to the two ends of described power device switch element, is used for absorbing short circuit pass The overvoltage that when described power device switch element turns off time disconnected, both sides produce.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described Near-end short circuit protection module includes,
One diode, described diode is connected between a reference C point and a saturation voltage drop test point, institute State and be connected with the negative electrode of described diode with reference to C point;
One anti-clutter circuit, is connected between described diode and described saturation voltage drop test point, is used for pressing down Make the impact on described saturation voltage drop test point of the described high-frequency interferencing signal with reference to C point, described with reference to C Point is drawn from described power device switch element.
The short-circuit protection of solid-state switch the most according to claim 2, it is characterised in that described Anti-clutter circuit includes:
One stabilivolt, is connected between described saturation voltage drop test point and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity at described stabilivolt two ends by one and is series at described With reference to the 4th resistance composition between C point and described saturation voltage drop test point.
The short-circuit protection of solid-state switch the most according to claim 3, it is characterised in that described Far end short protection module includes:
Current sensor, is connected in the circuit branch at described power device switch element place, is used for feeling Flow measurement is through the current signal of described power device switch element;
Modulate circuit, is connected with described current sensor, for the electricity detected by described current sensor Stream signal is converted to corresponding current sampling data;
Comparison circuit, is connected with described modulate circuit, for the current amplitude according to described current sampling data And/or the climbing of described current sampling data determines whether short circuit generation;
CPLD controller, is connected with described comparison circuit, produces according to the comparative result of described comparison circuit Raw execution timing and calculating, to produce described cut-off signals.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described Comparison circuit includes:
First comparator, for comparing described current sampling data and a first threshold, and in described A high level signal is produced to drive described CPLD controller when current sampling data is more than described first threshold Start timing;
Second comparator, for being more than the Second Threshold of described first threshold to described current sampling data and one Compare, and when described current sampling data is more than described Second Threshold, produce another high level signal To drive described CPLD controller to stop timing;
3rd comparator, for comparing, in institute described current sampling data and a current protection threshold value State current sampling data and start timing more than during described current protection threshold value with the described CPLD controller of driving.
The short-circuit protection of solid-state switch the most according to claim 5, it is characterised in that described Comparison circuit also includes that a threshold value arranges circuit, for described first threshold, described Second Threshold and institute State current protection threshold value to be configured.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described Buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described Buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor;
Second diode, is parallel to the two ends of described first resistance.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described Power device switch element uses anti-series structure based on IGBT or coordinates based on diode rectification IGBT structure or based on IGBT inverse parallel structure.
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CN111308167A (en) * 2018-12-12 2020-06-19 惠州市蓝微电子有限公司 Short circuit and overcurrent detection method
CN112113018A (en) * 2019-06-22 2020-12-22 无锡水表有限责任公司 Scheme for opening and closing electromechanical integrated water meter valve
CN117220653A (en) * 2023-09-13 2023-12-12 上海正泰智能科技有限公司 Solid-state switch control method, solid-state switch system, control unit and storage medium

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CN106786430A (en) * 2017-01-19 2017-05-31 上海电气集团股份有限公司 A kind of discriminating conduct of short circuit malfunction
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CN117220653A (en) * 2023-09-13 2023-12-12 上海正泰智能科技有限公司 Solid-state switch control method, solid-state switch system, control unit and storage medium

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