CN105870886A - Short-circuit protection device of solid-state switch - Google Patents
Short-circuit protection device of solid-state switch Download PDFInfo
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- CN105870886A CN105870886A CN201610190216.8A CN201610190216A CN105870886A CN 105870886 A CN105870886 A CN 105870886A CN 201610190216 A CN201610190216 A CN 201610190216A CN 105870886 A CN105870886 A CN 105870886A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/22—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices
- H02H7/222—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for distribution gear, e.g. bus-bar systems; for switching devices for switches
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- H02J13/0006—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
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Abstract
The invention belongs to the technical field of power electronics, and particularly relates to a short-circuit protection device of a solid-state switch. The short-circuit protection device of the solid-state switch comprises a power device switch unit, an intelligent detection and protection unit and a buffer circuit unit, wherein the power device switch unit is connected to a main circuit system and is used for achieving on/off function of a main circuit; the intelligent detection and protection unit comprises a near-end short-circuit protection module and a remote-end short-circuit protection module and is used for sending out a shut-off signal to the power device switch unit when in a near-end short-circuit or a remote-end short-circuit; and the buffer circuit unit is connected to two ends of the power device switch unit and is used for absorbing over-voltages generated at two ends when the short-circuit is shut off and the power device switch unit is turned off. A corresponding solving method is provided from three aspects of near-end short-circuit protection, remote-end short-circuit protection, over-voltage protection and the like; the condition that the solid-state switch can be safely and reliably turned off under different short-circuit conditions is ensured; meanwhile, no maloperation of the solid-state switch in an intense electromagnetic interference environment is ensured; the short-circuit protection device of the solid-state switch has good reliability; and the short-circuit protection of the solid-state switch can be effectively achieved.
Description
Technical field
The invention belongs to electric and electronic technical field, particularly relate to a kind of short-circuit protection.
Background technology
Along with the fast development of power system, modern power systems faces a series of new contradiction and problem.
A large amount of accesses of distributed energy, a large amount of appearance of microgrid, the speed of action of switch is proposed increasingly
High requirement.Traditional mechanical switch speed of action is slow, arc extinguishing difficulty, in supper-fast on-load switch, limit
Stream chopper, the occasion higher to switching speed requirements such as seamless switching switch, it is increasingly difficult to suitable
Should.Solid-state switch power electronic devices instead of traditional mechanical switch, is to utilize power electronics device
Part, as the contactless switching device of switch module, has and cut-offs speed soon, and silent, without electric arc, longevity
The advantages such as life is long, but with IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar
Transistor npn npn) be that the power electronic devices of representative is applied to solid-state switch field, exist shove ability and
The problems such as voltage endurance capability difference, due to drawbacks described above so that solid-state switch can not have when short circuit occurs
Effect ground protection, it is easy to be damaged.
Summary of the invention
For above technical problem, the present invention provides the short-circuit protection of a kind of solid-state switch, to solve
The defect that the solid-state switch of prior art can not effectively be protected when short circuit occurs;
Concrete technical scheme is as follows:
A kind of short-circuit protection of solid-state switch, wherein, including:
Power device switch element, is connected in a main circuit system, for realizing the break-make merit of main circuit
Energy;
Intelligent Measurement and protected location, protect module including a near-end short circuit protection module and a far end short,
In order to the short circuit of described power device switch element generation near-end to be detected or during far end short to described power device
Part switch element sends a cut-off signals;
Buffering circuit unit, is connected to the two ends of described power device switch element, is used for absorbing short circuit pass
The overvoltage that when described power device switch element turns off time disconnected, both sides produce.
The short-circuit protection of above-mentioned solid-state switch, described near-end short circuit protection module includes,
One diode, described diode is connected between a reference C point and a saturation voltage drop test point, institute
State and be connected with the negative electrode of described diode with reference to C point;
One anti-clutter circuit, is connected between described diode and described saturation voltage drop test point, is used for pressing down
Make the impact on described saturation voltage drop test point of the described high-frequency interferencing signal with reference to C point, described with reference to C
Point is drawn from described power device switch element.
The short-circuit protection of above-mentioned solid-state switch, described anti-clutter circuit includes:
One stabilivolt, is connected between described saturation voltage drop test point and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity at described stabilivolt two ends by one and is series at described
With reference to the 4th resistance composition between C point and described saturation voltage drop test point.
The short-circuit protection of above-mentioned solid-state switch, described far end short protection module includes:
Current sensor, is connected in the circuit branch at described power device switch element place, is used for feeling
Flow measurement is through the current signal of described power device switch element;
Modulate circuit, is connected with described current sensor, for the electricity detected by described current sensor
Stream signal is converted to corresponding current sampling data;
Comparison circuit, is connected with described modulate circuit, for the current amplitude according to described current sampling data
And/or the climbing of described current sampling data determines whether short circuit generation;
CPLD controller, is connected with described comparison circuit, produces according to the comparative result of described comparison circuit
Raw execution timing and calculating, to produce described cut-off signals.
The short-circuit protection of above-mentioned solid-state switch, described comparison circuit includes:
First comparator, for comparing described current sampling data and a first threshold, and in described
A high level signal is produced to drive described CPLD controller when current sampling data is more than described first threshold
Start timing;
Second comparator, for being more than the Second Threshold of described first threshold to described current sampling data and one
Compare, and when described current sampling data is more than described Second Threshold, produce another high level signal
To drive described CPLD controller to stop timing;
3rd comparator, for comparing, in institute described current sampling data and a current protection threshold value
State current sampling data and start timing more than during described current protection threshold value with the described CPLD controller of driving.
The short-circuit protection of above-mentioned solid-state switch, described comparison circuit also includes that a threshold value arranges circuit,
For described first threshold, described Second Threshold and described current protection threshold value are configured.
The short-circuit protection of above-mentioned solid-state switch, described buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor.
The short-circuit protection of above-mentioned solid-state switch, described buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor;
Second diode, is parallel to the two ends of described first resistance.
The short-circuit protection of above-mentioned solid-state switch, described power device switch element uses based on IGBT
Anti-series structure or coordinate IGBT structure or based on IGBT inverse parallel structure based on diode rectification.
Beneficial effect: above technical scheme proximally short-circuit protection, far end short protection, overvoltage protection etc.
Three aspects propose corresponding solution, it is ensured that solid-state switch can complete under different Short-circuit Working Conditions
Safe and reliable shutoff, ensure that solid-state switch does not occur malfunction in the environment of strong electromagnetic simultaneously,
There is good reliability, it is possible to be effectively realized the short-circuit protection of solid-state switch.
Accompanying drawing explanation
Fig. 1 is assembly of the invention structural representation;
Fig. 2 is the near-end short circuit protection module schematic diagram of the present invention;
Fig. 3 is the far end short protection module diagram of the present invention;
Fig. 4 is the electrical block diagram of a kind of specific embodiment of the present invention;
Fig. 5 is the electrical block diagram of the another kind of specific embodiment of the present invention;
Fig. 6 is the electrical block diagram of another specific embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The every other embodiment obtained on the premise of going out creative work, broadly falls into the scope of protection of the invention.
It should be noted that in the case of not conflicting, the embodiment in the present invention and the spy in embodiment
Levy and can be mutually combined.
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, but not as the present invention's
Limit.
The ability of shoving refers to that power electronic devices tolerates the ability of big electric current, and solid-state switch is when short circuit occurs
The short circuit current of more than 10 times of rated current can be flow through, and power electronic devices can only tolerate several times in short-term
Rated current;If can not turn off in time after short circuit occurs, power device can be caused to lose efficacy, switch loses
Spirit, causes serious consequence.Voltage endurance capability then refers to that power electronic devices bears the ability of overvoltage, opens
Closing device when off, switch both sides can produce overvoltage.This overvoltage size is mainly by two factors
Determining, one is the value of circuit emotional resistance, another one be off during the rate of change of electric current.Line
The emotional resistance on road is the biggest, and in turn off process, the rate of change of electric current is the biggest, and overvoltage is the biggest.Electric power electricity
As switch series in the line, the emotional resistance on circuit is bigger for sub-device, simultaneously because power electronics
The speed that device turns off, the current changing rate in whole turn off process is very big, therefore closes at switch
Can produce the highest overvoltage at power electronic devices two ends time disconnected, power electronic devices bears overvoltage
Ability is the most weak, only needs a due to voltage spikes the shortest to be possible to damage device, causes switch failure.
These defects existed due to power electronic devices, solid-state switch is protected effectively at short circuit generation needs
Protecting, guarantee solid-state switch, while turning off, will not be damaged.
Reference Fig. 1, the short-circuit protection of a kind of solid-state switch, including:
Power device switch element 1, is connected in a main circuit system, for realizing the break-make of main circuit
Function;
Intelligent Measurement and protected location 2, protect including a near-end short circuit protection module 21 and a far end short
Module 22, in order to detect that power device switch element 1 occurs near-end short circuit or during far end short to power
Devices switch unit 1 sends a cut-off signals;
Buffering circuit unit 3, is connected to the two ends of power device switch element 1, for absorption dynamometer
The overvoltage that when part switch element turns off, both sides produce.
According to the distance of short dot range switch distance, short circuit can be divided into near-end short circuit and far end short.
Near-end short circuit represents that the point of short circuit generation is close with solid-state switch, the impedance ratio of the circuit of whole short-circuit loop
Less, there is the climbing of after current very greatly in short circuit, generally higher than 50A/us.Far end short represents short circuit
The point occurred is away from solid-state switch, and the line impedance of whole short-circuit loop is bigger, and short circuit occurs after current
Climbing is smaller compared to near-end short circuit, typically at several A/us to 50A/us.Open for existing solid-state
Close defect existing when short circuit occurs and the fault type of short circuit, the Intelligent Measurement of the present invention and protection
Unit includes far end short protection module and near-end short circuit protection module, in order to detect that power device switchs
A cut-off signals is sent to power device switch element when the short circuit of unit generation near-end or far end short;Can
Ensure that solid-state switch can be protected under different Short-circuit Working Conditions effectively.
The short-circuit protection of above-mentioned solid-state switch, near-end short circuit protection module 21 may include that
One diode D1, diode D1 are connected to one with reference to C point and a saturation voltage drop test point DESAT
Between, it is connected with the negative electrode of diode D1 with reference to C point;
One anti-clutter circuit 211, is connected between diode D1 and saturation voltage drop test point DESAT,
For suppressing the impact on saturation voltage drop test point DESAT of high-frequency interferencing signal with reference to C point, reference
C point is drawn from power device switch element 1.
The short-circuit protection of above-mentioned solid-state switch, anti-clutter circuit 211 can be as in Fig. 2 dotted line frame
Shown in, including:
One stabilivolt ZD1, is connected between saturation voltage drop test point DESAT and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity C3 at stabilivolt ZD1 two ends by one and is series at
With reference to the 4th resistance R4 composition between C point and saturation voltage drop test point DESAT.
Tradition IGBT moves back saturated protection middle controller by detection saturation voltage drop test point DESAT point
Voltage judges whether short circuit occurs.Rise rapidly with reference to C point current potential when short circuit occurs, saturation voltage drop
The current potential of test point DESAT point rises simultaneously, thinks generation when exceeding controller after certain threshold value
Short circuit, turns off pulse and protects.Owing to solid-state switch application scenario electromagnetic environment is relatively more severe, solid-state
The current potential switching normal reference C point also there will be the due to voltage spikes of high frequency, when spike occurs,
The current potential of saturation voltage drop test point DESAT point occurs spike the most therewith, and controller is just mistakenly considered short circuit and sends out
Give birth to and protect, cause solid-state switch misoperation.After adding anti-clutter circuit, with reference to the electricity of C point
Pressure signal is by wave filter, and the disturbing signal of high frequency is filtered out, and restrained effectively and does with reference to C point high frequency
Disturb the signal impact on saturation voltage drop test point DESAT point current potential, it is ensured that the reliability that short circuit judges.
The stabilivolt ZD1 the most in parallel with electric capacity C3 can stablize the electricity of saturation voltage drop test point DESAT point
Pressure, prevents the overtension of DESAT point from causing damage controller.
Near-end short circuit current climbing is big, and general current sensor is difficult to detect, and needs to utilize
The saturated characteristic of moving back of IGBT detects the generation of short circuit and protects.This guard method is comparatively close to
Protection during IGBT shoot through in conventional current transformer.The protection speed that IGBT moves back saturated protection is fast, but
It is easier to be disturbed by electromagnetic signal, compared to the application scenario of current transformer, the application of solid-state switch
Occasion electromagnetic environment is more severe, moves back, with traditional, the problem that saturation protecting method there will be protection misoperation.
Traditional current transformer protection, even if there is the problem protected by mistake, only there will be shutdown self-inspection, does not have assorted
Ill effect.But in the application scenario of solid-state switch, misoperation can bring a series of use frequently
Electricity problem, reduces the quality of power supply, affects stablizing of electrical network, directly affects what solid-state switch normally worked
Reliability.The present invention is directed to tradition IGBT move back saturated protection and deposited on solid-state switch near-end short-circuit protection
Problem, it is proposed that the near-end short-circuit protection method of a kind of electromagnetism interference.The method can be effectively
Solution conventional near-end short-circuit protection is easily subject to electromagnetic interference and causes the problem of solid-state switch misoperation, can
Ensure that solid-state switch has the protective capability of near-end electric current, also can guarantee that solid-state switch not malfunction, it is ensured that
The reliability of solid-state switch.
The short-circuit protection of above-mentioned solid-state switch, far end short protection module 22 as shown in Figure 3,
May include that
Current sensor 220, is connected in the circuit branch at power device switch element 1 place, is used for
Sensing flows through the current signal of power device switch element 1;
Modulate circuit 221, is connected with current sensor 220, for the electricity detected by current sensor
Stream signal is converted to corresponding current sampling data;
Comparison circuit 223, is connected with modulate circuit 221, for the current amplitude according to current sampling data
And/or the current-rising-rate of current sampling data i determines whether short circuit generation;
CPLD controller 224, is connected with comparison circuit 223, according to the comparison knot of comparison circuit 223
Fruit produces and performs timing and calculating, to produce cut-off signals.
The short-circuit protection of above-mentioned solid-state switch, comparison circuit includes:
First comparator, for current sampling data Is and first threshold ILCompare, and in electricity
Stream sampled value Is is more than first threshold ILTime produce a high level signal to drive CPLD controller 224
Start timing;
Second comparator, for being more than first threshold I to current sampling data Is andLSecond Threshold IH
Compare, and in current sampling data Is more than Second Threshold IHTime produce another high level signal to drive
Dynamic CPLD controller 224 stops timing;
3rd comparator, for current sampling data Is and current protection threshold value ImaxCompare, in
Current sampling data Is is more than current protection threshold value ImaxTime with drive CPLD controller 224 start timing.
The short-circuit protection of above-mentioned solid-state switch, comparison circuit also includes that a threshold value arranges circuit
2231, for first threshold IL, Second Threshold IHAnd current protection threshold value ImaxIt is configured.
In the distal embolic protection short circuit protection module 22 of the present invention, current sensor 220 detects current signal,
Compare after being converted to suitable signal by modulate circuit 221 and incoming CPLD controller 224
Carrying out signal processing, CPLD controller 224 is when judgement detects that short circuit occurs, to solid-state switch
Send cut-off signals to complete to turn off.
The specific works process of above-mentioned comparison circuit is as follows, when current sampling data Is is more than first threshold IL
Time, comparison circuit 223 sends a road high level signal to CPLD controller 224, simultaneously CPLD control
Device 224 processed starts timing;When current sampling data Is is more than Second Threshold IHTime, comparison circuit 223
Another road high level signal is given to stop timing to CPLD controller 224, CPLD controller 224, meter
Time time be calculated as Ts.The computational methods of current-rising-rate di/dt are (IH-IL)/T, wherein Second Threshold IH,
First threshold ILFor artificial setting value, therefore the value by obtaining Ts can obtain a corresponding electric current
Climbing ks.Current-rising-rate ka and the kb of correspondence in like manner can be obtained by being manually set Ta and Tb.
When current-rising-rate ks of detection meets the condition of ka < ks < kb, namely detection time Ts is full
Foot Tb < Ts < Ta, CPLD controller 224 is thought generation far end short, is sent pass to solid-state switch
Break signal, i.e. realizes judging far end short according to current-rising-rate.
Current sampling data Is is compared by above-mentioned comparison circuit 223 with current protection value Imax, as
Really current sampling data Is is more than current protection value Imax, comparison circuit one high level of transmission to CPLD
Controller 224, CPLD controller 224 starts timing simultaneously.Electric current once occurs in timing course
Sampled value Is is less than the situation of current protection value Imax, and CPLD controller 224 timing terminates at once,
Wait that next high level arrives the most again to count.When timing time Ts is more than setting value Tb, namely
It is consistently greater than current protection value Imax at Tb current sampling data Is during this period of time, crosses stream and exist all the time, this
Time CPLD controller 224 judge that far end short occurs, send cut-off signals to solid-state switch.Wherein
Tb value is for being manually set, extraneous dry by avoiding on the premise of arranging rational Tb value and can ensure that quick-action
Disturb the malfunction caused, i.e. judge far end short according to current amplitude.
Far end short current-rising-rate is relatively low, and the rising characteristic of electric current is similar to the situation of overload.Pass
The overload protection of system is realized by software, samples current signal by current sensor, and software leads to
Cross judgement current signal and send shutoff instruction.The application scenario electromagnetic interference of switch is relatively big, current sensor
It is the biggest to there is burr in collection signal out.If using single-point to judge, although to ensure that judgement
Rapidity, but also result in erroneous judgement simultaneously, cause the misoperation of switch;If using multiple spot to judge, soft
Part is limited by the cycle time of signal sampling, and whole fault determining time can be caused long, on short circuit current
It is raised to the biggest value, causes the infringement of solid-state switch.The present invention is directed to tradition overload protection and be applied to solid-state
The problem of switch, it is proposed that a kind of guard method based on hardware circuit.Utilize hardware circuit chip CPLD
Controller, can carry out dual judgement to the climbing of the amplitude of electric current and electric current, both can guarantee that judgement
Rapidity, also can guarantee that the reliability of judgement, it is possible to efficiently solve solid-state switch and send out at far end short
Protection problem time raw.The method judging far end short in the present invention is current-rising-rate and current amplitude
Dual judgement.Wherein be judged as main with current-rising-rate, current amplitude is judged as auxiliary.Risen by electric current
Far end short can be made a distinction by the judgement of rate significantly with situations such as near-end short circuit, overloads.Once cannot
Correctly being judged by current-rising-rate, current amplitude judges to have an effect as a kind of security mechanism,
Ensure that solid-state switch turns off under the electric current that can turn off.Just because of this judgment mechanism, the guarantor of the present invention
The situation such as electromagnetic noise, overload can be distinguished by maintaining method effectively with far end short, it is ensured that opens
Close the not malfunction when normal work, it is ensured that the reliability of switch.Owing to CPLD controller is at a high speed
, there is not the restriction in sampling period in hardware circuit compared with software, the speed of detection is more faster than software,
The time that detection judges can be greatly shortened, it is ensured that solid-state switch completed to close electric current is relatively low when
Disconnected, effectively ensure the solid-state switch safe shutdown when far end short.
The short-circuit protection of above-mentioned solid-state switch, buffering circuit unit 3 can include electric capacity, two poles
Pipe, resistance, varistor etc., it is possible to absorb the overvoltage that when short circuit turns off, switch both sides produce.As Fig. 4,
Shown in Fig. 6, buffering circuit unit can include,
Varistor MOV, is connected to the two ends of power device switch element 1;
The branch road of the first resistance Rs and the first electric capacity Cs series connection, in parallel with varistor MOV.
In traditional current transformer occasion, the loop emotional resistance at IGBT place is less, and IGBT turns off
Be all the electric current of below rated current, cut-off current is less, and the shutoff voltage produced when therefore turning off is relatively
Little, just can suppress to turn off the overvoltage produced with simple c-type or RC type buffer circuit.But
Solid-state switch occasion, IGBT place circuit emotional resistance is very big, and IGBT turns off when short circuit occurs
Be the short circuit current far above rated current, cut-off current is the biggest.Therefore the energy that in circuit, inductance stores
Amount is very big, cannot absorb fully with traditional buffer circuit, causes the generation turning off overvoltage.Due to
The proof voltage ability of IGBT is the most weak, causes solid-state switch during turning off short circuit current because closing
Disconnected overtension and be damaged.The present invention is directed to solid-state switch occasion IGBT short circuit and turn off overvoltage relatively
High problem, adds varistor on the basis of traditional buffer circuit, for perception in absorption circuit
The energy that impedance produces, in combination with the technology of slow shutoff, it is ensured that solid-state switch is turning off short circuit electricity
Overvoltage protection during stream.
The short-circuit protection of above-mentioned solid-state switch, buffering circuit unit can also be as it is shown in figure 5, wrap
Include one second diode Ds1, be parallel to the two ends of the first resistance Rs.When IGBT turns off, the two or two pole
Pipe Ds1 turns on, and owing to electric capacity both end voltage can not be suddenlyd change, voltage slowly rises;When voltage exceedes pressure-sensitive
During resistive voltage, varistor turns on the energy on further absorption circuit inductance, and IGBT two ends
Voltage is restricted to below the clamp voltage of varistor, it is ensured that IGBT two ends electricity in whole turn off process
Press not overvoltage, it is ensured that solid-state switch safety in short circuit turn off process.Except buffer circuit, this
The bright method applying slow shutoff during turning off, by improving gate leve in IGBT turn off process
Voltage, the turn-off speed of IGBT when having delayed to turn off short circuit current, it is possible to effectively reduce the change of electric current
Rate, reduces the overvoltage turned off.
The power device switch element 1 of the present invention is mainly by IGCT, IGBT, IGCT (Integrated
Gate Commutated Thyristors, integrated gate commutated thyristor) etc. power electronic devices composition,
Realize the on-off function of whole main circuit.Short-circuit protection below in conjunction with the present invention is used for several solid-states
Switch topology is combined explanation:
The first specific embodiment, as shown in Figure 4, is applied in three-phase four-wire system, wherein power
Devices switch unit 1 uses anti-series structure based on IGBT, and energy can be with two-way flow.Buffering electricity
Road unit is made up of the first resistance Rs, the first electric capacity Cs and varistor MOV.Near-end short circuit is protected
Protecting the realization of module 21 as shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out
Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the
One resistance Rs charges to the first electric capacity Cs, because capacitance voltage can not suddenly change, limits IGBT
The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads
Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Anti-series structure based on IGBT includes:
First IGBT device IGBT1, the colelctor electrode of the first IGBT device IGBT1 concatenates with emitter stage
In a phase line of three-phase four-wire system;
Second IGBT device IGBT2, the emitter stage of the second IGBT device IGBT2 and an IGBT
The emitter stage of device IGBT1 connects, and forms an anti-series type structure with the first IGBT device.
The second specific embodiment: as it is shown in figure 5, be applied in three-phase four-wire system, wherein power
Devices switch unit 1 uses and coordinates IGBT structure based on diode rectification, and energy can be with two-way flow.
Buffering circuit unit is by the first resistance Rs, the first electric capacity Cs, the second diode Ds1 and varistor
MOV forms.Buffer circuit is made up of resistance, electric capacity, diode and varistor.Near-end short circuit
As shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3 in the realization of protection module 21.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out
Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the
Two diode Ds charge to the first electric capacity Cs, because capacitance voltage can not suddenly change, limit IGBT
The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads
Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Based on diode rectification coordinate IGBT structure include: bridge rectifier, by diode D1, two
Pole pipe D2, diode D3 and diode D4 composition;The negative electrode of diode D1 and diode D2 connects,
The anode of diode D2 is connected with the negative electrode of diode D3, diode D3 and the anode of diode D4
Connecting, the anode of diode D1 is connected with the negative electrode of diode D4;
3rd IGBT device IGBT, the colelctor electrode of the 3rd IGBT device and diode D1 and diode
The negative electrode of D2 connects, the emitter stage of the 3rd IGBT device and the anode of diode D3 and diode D4
Anode connect.
The third specific embodiment: as shown in Figure 6, is applied in three-phase four-wire system, wherein power
Devices switch unit 1 uses based on IGBT inverse parallel structure, and energy can be with two-way flow;Buffer circuit
Unit is made up of the first resistance Rs, the first electric capacity Cs and varistor MOV.Near-end short-circuit protection
As shown in Figure 2, the realization of far end short protection module 22 is as shown in Figure 3 in the realization of module 21.
When near-end short circuit occurs, IGBT is closed in near-end short circuit protection module 21 action.Far end short is sent out
Time raw, IGBT is closed in far end short protection module 22 action.Turning off after IGBT, electric current will be by the
One resistance Rs charges to the first electric capacity Cs, because capacitance voltage can not suddenly change, limits IGBT
The climbing of both end voltage, when voltage exceedes varistor MOV voltage, varistor MOV leads
Logical absorption excess energy, prevents IGBT from puncturing because of overvoltage.
Above-mentioned includes based on IGBT inverse parallel structure:
4th IGBT device IGBT4, the colelctor electrode of the 4th IGBT device IGBT4 concatenates with emitter stage
In phase line;
5th IGBT device IGBT5, with the 4th IGBT device IGBT4 inverse parallel, the 4th IGBT
The emitter stage of device IGBT4 and the colelctor electrode of the 5th IGBT device IGBT5 connect, the 4th IGBT device
The colelctor electrode of part and the emitter stage of the 5th IGBT device connect.
The present invention can suppress the electromagnetic interference interference to near-end short-circuit detecting effectively, it is ensured that solid-state is opened
Close energy trouble-free operation in the case of nominal situation, substantially increase the reliability of solid-state switch.Use with hard
The far end short guard method of part circuit realiration, it is possible to take into account rapidity and the reliability of protection, significantly carry
The high performance of solid-state switch far end short protection.And propose and a kind of on buffer circuit, add pressure-sensitive electricity
Resistance, and use the slow method turned off, it is possible to the mistake that suppression solid-state switch produces when short circuit turns off effectively
Voltage, improves the reliability that solid-state switch short circuit turns off, it is ensured that peace when solid-state switch short circuit turns off
Entirely.
These are only preferred embodiment of the present invention, not thereby limit embodiments of the present invention and protection
Scope, to those skilled in the art, it should can appreciate that all utilization description of the invention and figure
Show the equivalent done by content and the scheme obtained by obvious change, all should be included in this
In the protection domain of invention.
Claims (9)
1. the short-circuit protection of a solid-state switch, it is characterised in that including:
Power device switch element, is connected in a main circuit system, for realizing the break-make merit of main circuit
Energy;
Intelligent Measurement and protected location, protect module including a near-end short circuit protection module and a far end short,
In order to the short circuit of described power device switch element generation near-end to be detected or during far end short to described power device
Part switch element sends a cut-off signals;
Buffering circuit unit, is connected to the two ends of described power device switch element, is used for absorbing short circuit pass
The overvoltage that when described power device switch element turns off time disconnected, both sides produce.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described
Near-end short circuit protection module includes,
One diode, described diode is connected between a reference C point and a saturation voltage drop test point, institute
State and be connected with the negative electrode of described diode with reference to C point;
One anti-clutter circuit, is connected between described diode and described saturation voltage drop test point, is used for pressing down
Make the impact on described saturation voltage drop test point of the described high-frequency interferencing signal with reference to C point, described with reference to C
Point is drawn from described power device switch element.
The short-circuit protection of solid-state switch the most according to claim 2, it is characterised in that described
Anti-clutter circuit includes:
One stabilivolt, is connected between described saturation voltage drop test point and VE point;
One RC filter circuit, is parallel to the 3rd electric capacity at described stabilivolt two ends by one and is series at described
With reference to the 4th resistance composition between C point and described saturation voltage drop test point.
The short-circuit protection of solid-state switch the most according to claim 3, it is characterised in that described
Far end short protection module includes:
Current sensor, is connected in the circuit branch at described power device switch element place, is used for feeling
Flow measurement is through the current signal of described power device switch element;
Modulate circuit, is connected with described current sensor, for the electricity detected by described current sensor
Stream signal is converted to corresponding current sampling data;
Comparison circuit, is connected with described modulate circuit, for the current amplitude according to described current sampling data
And/or the climbing of described current sampling data determines whether short circuit generation;
CPLD controller, is connected with described comparison circuit, produces according to the comparative result of described comparison circuit
Raw execution timing and calculating, to produce described cut-off signals.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described
Comparison circuit includes:
First comparator, for comparing described current sampling data and a first threshold, and in described
A high level signal is produced to drive described CPLD controller when current sampling data is more than described first threshold
Start timing;
Second comparator, for being more than the Second Threshold of described first threshold to described current sampling data and one
Compare, and when described current sampling data is more than described Second Threshold, produce another high level signal
To drive described CPLD controller to stop timing;
3rd comparator, for comparing, in institute described current sampling data and a current protection threshold value
State current sampling data and start timing more than during described current protection threshold value with the described CPLD controller of driving.
The short-circuit protection of solid-state switch the most according to claim 5, it is characterised in that described
Comparison circuit also includes that a threshold value arranges circuit, for described first threshold, described Second Threshold and institute
State current protection threshold value to be configured.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described
Buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described
Buffering circuit unit includes,
Varistor, is connected to the two ends of described power device switch element;
By the first resistance and the branch road of the first capacitances in series, in parallel with described varistor;
Second diode, is parallel to the two ends of described first resistance.
The short-circuit protection of solid-state switch the most according to claim 1, it is characterised in that described
Power device switch element uses anti-series structure based on IGBT or coordinates based on diode rectification
IGBT structure or based on IGBT inverse parallel structure.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106786430A (en) * | 2017-01-19 | 2017-05-31 | 上海电气集团股份有限公司 | A kind of discriminating conduct of short circuit malfunction |
CN109714033A (en) * | 2019-02-22 | 2019-05-03 | 无锡瓴芯电子科技有限公司 | The driving device and method of power device |
CN110445359A (en) * | 2018-05-03 | 2019-11-12 | 北京北秦安全技术有限公司 | A kind of power circuit of single-phase active arc extinguishing type short-circuit protection |
CN111308167A (en) * | 2018-12-12 | 2020-06-19 | 惠州市蓝微电子有限公司 | Short circuit and overcurrent detection method |
CN112113018A (en) * | 2019-06-22 | 2020-12-22 | 无锡水表有限责任公司 | Scheme for opening and closing electromechanical integrated water meter valve |
CN117220653A (en) * | 2023-09-13 | 2023-12-12 | 上海正泰智能科技有限公司 | Solid-state switch control method, solid-state switch system, control unit and storage medium |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6104149A (en) * | 1997-02-28 | 2000-08-15 | International Rectifier Corp. | Circuit and method for improving short-circuit capability of IGBTs |
CN101478244A (en) * | 2009-01-12 | 2009-07-08 | 浙江大学 | Voltage falling generator for wind power electricity generation |
CN102594104A (en) * | 2012-02-22 | 2012-07-18 | 武汉正远铁路电气有限公司 | Digital intelligent driving device of high-power IGBT (insulated gate bipolar translator) |
CN202550515U (en) * | 2012-04-01 | 2012-11-21 | 上海市电力公司 | High-power IGBT (insulated gate bipolar transistor) comprehensive overcurrent protection circuit |
-
2016
- 2016-03-29 CN CN201610190216.8A patent/CN105870886B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6104149A (en) * | 1997-02-28 | 2000-08-15 | International Rectifier Corp. | Circuit and method for improving short-circuit capability of IGBTs |
CN101478244A (en) * | 2009-01-12 | 2009-07-08 | 浙江大学 | Voltage falling generator for wind power electricity generation |
CN102594104A (en) * | 2012-02-22 | 2012-07-18 | 武汉正远铁路电气有限公司 | Digital intelligent driving device of high-power IGBT (insulated gate bipolar translator) |
CN202550515U (en) * | 2012-04-01 | 2012-11-21 | 上海市电力公司 | High-power IGBT (insulated gate bipolar transistor) comprehensive overcurrent protection circuit |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106786430A (en) * | 2017-01-19 | 2017-05-31 | 上海电气集团股份有限公司 | A kind of discriminating conduct of short circuit malfunction |
CN106786430B (en) * | 2017-01-19 | 2018-12-18 | 上海电气集团股份有限公司 | A kind of discriminating conduct of short circuit malfunction |
CN110445359A (en) * | 2018-05-03 | 2019-11-12 | 北京北秦安全技术有限公司 | A kind of power circuit of single-phase active arc extinguishing type short-circuit protection |
CN111308167A (en) * | 2018-12-12 | 2020-06-19 | 惠州市蓝微电子有限公司 | Short circuit and overcurrent detection method |
CN109714033A (en) * | 2019-02-22 | 2019-05-03 | 无锡瓴芯电子科技有限公司 | The driving device and method of power device |
CN112113018A (en) * | 2019-06-22 | 2020-12-22 | 无锡水表有限责任公司 | Scheme for opening and closing electromechanical integrated water meter valve |
CN117220653A (en) * | 2023-09-13 | 2023-12-12 | 上海正泰智能科技有限公司 | Solid-state switch control method, solid-state switch system, control unit and storage medium |
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