CN105870555B - A kind of tunable band-stop filter - Google Patents
A kind of tunable band-stop filter Download PDFInfo
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- CN105870555B CN105870555B CN201610462927.6A CN201610462927A CN105870555B CN 105870555 B CN105870555 B CN 105870555B CN 201610462927 A CN201610462927 A CN 201610462927A CN 105870555 B CN105870555 B CN 105870555B
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- line
- tunable band
- stop filter
- slot
- slot line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
Abstract
The embodiment of the invention discloses a kind of tunable band-stop filters, including metal layer, substrate, resonator element, low pressure external electrode and high resistant offset line；Metal layer is divided into signal wire and two ground wires for being located at signal wire both sides by two the first slot lines；Tunable band-stop filter is symmetrical about the cross central line of signal wire；Resonator element includes：Multiple gap rings, multiple gap connecting lines and multiple integrated switch units are set on the ground wire of the same side；Multiple gap rings are spaced apart along the first slot line extending direction and pass sequentially through gap connecting line connection；Integrated switch unit includes the second slot line and mems switch；Mems switch includes bridge pier, cantilever beam, contact, high pressure external electrode；Multiple integrated switch units of resonator element are arranged along the first slot line extending direction interval.The embodiment of the present invention can realize the regulable center frequency of bandstop filter, and can be used as the function that straight-through transmission line uses, and can improve the reliability of centre frequency adjusting.
Description
Technical field
The present invention relates to radio-frequency micro electromechanical system technical field, more particularly to a kind of tunable band-stop filter.
Background technology
Filter is the core component of communication system, and bandstop filter (bandstop filters, abbreviation BSF) refers to energy
By most of frequency components, but the frequency component of certain ranges is decayed to the filter of extremely low level.Tunable band-stop filters
Device can replace multiple non-dimmable bandstop filter functions, system cost be greatly reduced, based on MEMS technology co-planar waveguide
Tunable band-stop filter has low cost, small size, the advantage being easily integrated, and is the research hotspot in international communication field.
Traditional co-planar waveguide tunable band-stop filter is to realize resonator resonant frequency by changing mems switch height
Change, in this way design cause：The degree of regulation of centre frequency is with the increase of number of use, drastically reduce, filter work
Reliability it is relatively low.This is primarily due to：The adjusting of mems switch height is realized by the deformation of switch beam, is repeatedly adjusted
Afterwards, switch beam easy tos produce fatigue, and the altitude location precision of switch beam drastically declines.Meanwhile existing tunable filter can only
It is used as filter, cannot function as straight-through transmission line and use, bring many inconvenience to using in this way.
Invention content
The embodiment of the present invention is designed to provide a kind of tunable band-stop filter, to realize the center frequency of bandstop filter
Rate is adjustable, and can be used as the function that straight-through transmission line uses, and can improve the reliability of centre frequency adjusting.
In order to achieve the above objectives, the embodiment of the invention discloses a kind of tunable band-stop filter, technical solution is as follows：
A kind of tunable band-stop filter, including metal layer, substrate, resonator element, low pressure external electrode and high resistant biasing
Line；
Over the substrate, the metal layer is equipped with two the first slot lines for metal layer covering, described two articles the
The metal layer is divided into signal wire and two ground wires for being located at the signal wire both sides by one slot line；
The tunable band-stop filter is symmetrical about the cross central line of the signal wire；
The resonator element includes：Multiple gap rings, multiple gap connecting lines and multiple are set on the ground wire of the same side
Integrated switch unit；
Multiple gap rings, which are spaced apart along the first slot line extending direction and pass sequentially through gap connecting line, to be connected
It is logical；
Integrated switch unit includes the second slot line and mems switch, second slot line and the first close slot line
Isolated island is surrounded, the second slot line is connected to any gap connecting line；
The mems switch includes bridge pier, cantilever beam, contact, high pressure external electrode；The first end and contact of bridge pier
The both ends of cantilever beam the same side are separately fixed at, the second end of bridge pier is fixed on ground wire, along the first slot line extending direction, is hanged
Arm beam is across second slot line and isolated island；
High pressure external electrode is connected one to one by high resistant offset line and the isolated island, and low pressure external electrode passes through high resistant
Offset line is connect with the ground wire；
Multiple integrated switch units of the resonator element are arranged along the first slot line extending direction interval.
Preferably, the quantity for being located at the resonator element on the ground wire of the same side is multiple, and along the first slot line extension side
To interval setting successively；
The equivalent electrical length being spaced between any two adjacent resonator elements is default electrical length.
Preferably, the resonator element has symmetrical structure, and the plane of symmetry and the first slot line extending direction line
Vertically.
Preferably, the gap ring is rectangular aperture ring.
Preferably, the substrate is any one of High Resistivity Si, glass, aluminium oxide, GaAs.
Preferably, the tunable band-stop filter is made up of surface sacrificial process or body processing technology.
Preferably, the metal layer is made of any one of gold, aluminium, copper, silicon-aluminum mixture, titanium alloy, platinum.
Preferably, the high resistant offset line is connected by polylith square resistance forms.
Preferably, it is covered with silicon nitride medium layer on the outside of the high resistant offset line, the metal layer and the high resistant is isolated
Offset line.
In summary, a kind of tunable band-stop filter provided in an embodiment of the present invention, signal two-way component is respectively from first
The gap ring transmission of slot line resonator unit, generates phase difference, forms resonance circuit, and resonance point is half wavelength,
To realize the function of bandstop filter.The corresponding ground wire of mems switch is controlled by high pressure external electrode and low pressure external electrode
With the pressure difference of isolated island, cantilever beam deforms upon or restores so that contact and ground contact detach, and realize the logical of mems switch
It is disconnected.It is controlled by the combination of the mems switch to multiple integrated switch units, thus it is possible to vary biography of the signal component in the ring of gap
Defeated path length changes the phase difference of two paths of signals component, to realize the adjustment of filter centre frequency.When all MEMS are opened
Close contact with ground contact when, signal component cannot enter gap ring and transmit, at this time, it can be achieved that the work(of straight-through transmission line
Energy.By then passing through control contact and ground contact or detaching the adjusting of realization filter centre frequency, relative to existing skill
The adjusting for realizing centre frequency in art by controlling the switch depth of beam of mems switch, can improve filter centre frequency adjusting
Reliability.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of tunable band-stop filter provided in an embodiment of the present invention；
Fig. 2 is structural schematic diagram when not loading mems switch in Fig. 1；
Fig. 3 is A-A in Fig. 2 to schematic cross-sectional view；
Fig. 4 is the portions the B enlarged drawing in Fig. 3；
Fig. 5 is a kind of tunable band-stop filter structural schematic diagram that another embodiment of the present invention provides.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
A kind of structural schematic diagram of tunable band-stop filter provided in an embodiment of the present invention shown in referring to Fig.1-4, Fig. 1,
Fig. 2 is structural schematic diagram when not loading mems switch in Fig. 1；Fig. 3 is A-A in Fig. 2 to schematic cross-sectional view；Fig. 4 is
The portions B enlarged drawing in Fig. 3.The tunable band-stop filter includes metal layer 1, substrate 2, resonator element 3, low pressure external electrode 4
With high resistant offset line 5；Wherein, substrate 2 is any one of High Resistivity Si, glass, aluminium oxide, GaAs, in addition, metal layer 1 is adopted
It is made of any one of gold, aluminium, copper, silicon-aluminum mixture, titanium alloy, platinum, is not further limited herein.
Metal layer 1 is covered on substrate 2, and metal layer 1 is equipped with two the first slot lines 6, this two the first slot lines 6 will
Metal layer 1 is divided into signal wire 101 and two ground wires 102 for being located at 101 both sides of signal wire；
Tunable band-stop filter is symmetrical about the cross central line of signal wire 101；Wherein, refer to laterally right and left in Fig. 1
To the direction vertical with transverse direction is longitudinal.
Resonator element 3 includes：Multiple gap rings 31, multiple 32 and of gap connecting line are set on the same side ground wire 102
Multiple integrated switch units 33；Multiple gap rings 31 are spaced apart along 6 extending direction of the first slot line and pass sequentially through gap company
Wiring 32 is connected to, and signal component is used for transmission after connection；
It should be noted that since tunable band-stop filter is symmetrical about the cross central line of signal wire 101, so resonance
The quantity at least two of device unit 3, and be symmetricly set on the ground wire 102 of both sides.
Integrated switch unit 33 includes the second slot line 331 and mems switch 332, the second slot line 331 and close the
One slot line 6 surrounds isolated island 7, and the second slot line 331 is connected to any gap connecting line 32；
Mems switch 332 includes bridge pier 3321, cantilever beam 3322, contact 3323, high pressure external electrode 3324；Bridge pier
3321 first end and contact 3323 are separately fixed at the both ends of 3322 the same side of cantilever beam, and the second end of bridge pier 3321 is fixed
On ground wire 102, along 6 extending direction of the first slot line, cantilever beam 3322 is across the second slot line 331 and isolated island 7；
Here mems switch 332 belongs to the switch of cantilever beam 3322, is cut by the second slot line 331 on ground wire 102
Go out isolated island 7, is in order to disconnect ground wire 102 and isolated island 7, when it is implemented, isolated island can certainly be formed by other means
7, for example, covering one layer of silicon nitride layer on ground wire 102 corresponding to the lower section of cantilever beam 3322, one piece is arranged on silicon nitride layer
Sheet metal does not limit herein as isolated island 7.
High pressure external electrode 3324 is connected one to one by high resistant offset line 5 and isolated island 7, and low pressure external electrode 4 passes through
High resistant offset line 5 is connect with ground wire 102；Multiple integrated switch units 33 of resonator element 3 are along 6 extending direction of the first slot line
Interval setting.When it is implemented, resonator element 3 includes two integrated switch units 33, two integrated switch units 33 are along the
One slot line, 6 extending direction interval is arranged, and two integrated switch units, 33 corresponding second slot line 331 is and same seam
Gap connecting line 32 connects.
It should be noted that high pressure external electrode 3324 and low pressure external electrode 4 pass through different high resistant offset lines respectively
5, it is connect respectively with isolated island 7 and ground wire 102, high-potential voltage and low-potential voltage can be loaded respectively to isolated island 7 and ground wire 102,
So as to pressure difference be generated between isolated island 7 and ground wire 102, since cantilever beam 3322 is connect by bridge pier 3321 with ground wire 102 so that outstanding
Pressure difference is also generated between arm beam 3322 and ground wire 102.There are pressure differences with ground wire 102 for 332 corresponding isolated island 7 of a certain mems switch
Afterwards, electrostatic force is formed between isolated island 7 and cantilever beam 3322, under the suction-operated of electrostatic force, the cantilever beam of mems switch 332
3322 are bent downwardly deformation so that contact 3323 is connected with ground wire 102, i.e., mems switch 332 is closed.At this point, signal
Component can not by 332 corresponding second slot line 331 of mems switch enter gap ring 31, when all mems switches 332
Contact when being connected with ground wire 102, the component of signal can not be transmitted by gap ring 31, and whole mems switches 332 are equal
It in closed state, can only be transmitted by the first slot line 6, at this point, the embodiment of the present invention does not have filter function, be only equivalent to
Transmit the straight-through transmission line of signal.
When signal transmission, if the cantilever beam 3322 of some mems switch 332 is in a free state, contact 3323 not with
Ground wire 102 connects, i.e., mems switch 332 disconnects, and the part component of signal is stitched by the mems switch 332 corresponding second
Gap line 331, which enters gap ring 31, to be transmitted, and mems switch 332 is off, the signal component transmitted by gap ring 31 with
Phase difference is generated between the signal component transmitted by the first slot line 6, forms resonance, to realize filter function.Pass through
The closure or disconnection for adjusting multiple mems switches 332 can change the path-length of signal, and then can change phase difference,
So as to realize the adjustment of filter centre frequency.
It should be noted that when adjusting centre frequency each time or being switched to transmission line state, need to be directed to each resonance
Device unit 3 does identical adjustment, i.e., their whole mems switches 332 are closed or off-state is identical.For example, a resonator
First mems switch 332 of unit 3, which is in, to be disconnected, and second mems switch 332, which is in, to be closed, then other resonator elements 3
First mems switch 332 and second mems switch 332 be also required to correspondingly to adjust separately disconnection and be closed, it is specific real
Shi Shi, can be by 3 coordinated signals of each resonator element, you can while identical operation is done to each resonator element 3, when
So, without being limited thereto.
In summary, a kind of tunable band-stop filter provided in an embodiment of the present invention, signal component is respectively from the first gap
The gap ring 31 of 6 resonator unit 3 of line transmits, and generates phase difference, forms resonance circuit, and resonance point is half wavelength,
To realize the function of bandstop filter.It is corresponding that mems switch 332 is controlled by high pressure external electrode and low pressure external electrode 4
The pressure difference of ground wire 102 and isolated island 7, cantilever beam 3322 deform upon or restore so that contact 3323 contacts or divides with ground wire 102
From the closure of realization mems switch 332 or disconnection.Pass through the combination control of the mems switch 332 to multiple integrated switch units 33
System, thus it is possible to vary path-length of the signal component in gap ring 31 changes the phase difference of two paths of signals component, to real
The adjustment of existing filter centre frequency.When 332 contact 3323 of all mems switches is contacted with ground wire 102, signal component
Gap ring 31 cannot be entered to transmit, at this time, it can be achieved that the function of straight-through transmission line.By then passing through control contact 3323 and ground
Line 102 contacts or the adjusting of filter centre frequency is realized in separation, compared with the existing technology in being opened by controlling mems switch
The adjusting that depth of beam realizes centre frequency is closed, the reliability of filter centre frequency adjusting can be improved.
With reference to Fig. 5, Fig. 5 is a kind of tunable band-stop filter structural schematic diagram that another embodiment of the present invention provides, the reality
Example is applied to the difference is that only with embodiment illustrated in fig. 1：In the present embodiment, on the same side ground wire 102, multiple resonators are set
Unit 3, this multiple resonator element 3 are spaced setting successively along 6 extending direction of the first slot line；Any two adjacent resonators
The equivalent electrical length being spaced between unit 3 is default electrical length.When it is implemented, can 90 be set as default electrical length
Degree.When 3 corresponding mems switch 332 of resonator element is completely in disconnection, resonator element 3 corresponds to an intrinsic frequency,
The corresponding wavelength of the intrinsic frequency is λ0, then transmission of the physical separation i.e. between them between two resonator elements 3 is set
Line length is λ0π/2.Setting is to enable the embodiment of the present invention to obtain better amplitude-versus-frequency curve, it is made to have more in this way
There is rectangularity.
In the present embodiment, resonator element 3 has symmetrical structure, and the plane of symmetry and 6 extending direction line of the first slot line hang down
Directly, setting can improve the filtering performance of filter in this way.
In the present embodiment, gap ring 31 is that rectangular aperture ring certainly in other embodiments, can also be by gap ring 31
Ovalisation or circle are set, what shape specifically used, is not further limited herein.
When the manufacturing, tunable band-stop filter is made up of surface sacrificial process or body processing technology.
When it is implemented, in order to reduce the electric current in high resistant offset line 5, setting high resistant offset line 5 is by polylith square resistance
Series connection is formed, in addition, the total resistance value of high resistant line is 100~200k Ω, specifically, 5 outside of high resistant offset line is covered with silicon nitride
Dielectric layer, with isolating metal layer 1 and high resistant offset line 5.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
Each embodiment in this specification is all made of relevant mode and describes, identical similar portion between each embodiment
Point just to refer each other, and each embodiment focuses on the differences from other embodiments.Especially for device reality
For applying example, since it is substantially similar to the method embodiment, so description is fairly simple, related place is referring to embodiment of the method
Part explanation.
One of ordinary skill in the art will appreciate that all or part of step in realization above method embodiment is can
It is completed with instructing relevant hardware by program, the program can be stored in computer read/write memory medium,
The storage medium designated herein obtained, such as：ROM/RAM, magnetic disc, CD etc..
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent replacement, improvement and so within the spirit and principles in the present invention, are all contained in protection scope of the present invention
It is interior.
Claims (9)
1. a kind of tunable band-stop filter, which is characterized in that including metal layer, substrate, resonator element, low pressure external electrode and
High resistant offset line；
Over the substrate, the metal layer is equipped with two the first slot lines, two first seams for the metal layer covering
The metal layer is divided into signal wire and two ground wires for being located at the signal wire both sides by gap line；
The tunable band-stop filter is symmetrical about the cross central line of the signal wire, wherein the cross central line is：Edge
The center line of first slot line extending direction；
The resonator element includes：Multiple gap rings, multiple gap connecting lines and multiple integrated are set on the ground wire of the same side
Switch unit；
Multiple gap rings are spaced apart along the first slot line extending direction and pass sequentially through gap connecting line connection；
Integrated switch unit includes the second slot line and mems switch, and second slot line is surrounded with the first close slot line
Isolated island, the second slot line are connected to any gap connecting line；
The mems switch includes bridge pier, cantilever beam, contact, high pressure external electrode；The first end and contact of bridge pier are distinguished
The both ends of cantilever beam the same side are fixed on, the second end of bridge pier is fixed on ground wire, along the first slot line extending direction, cantilever beam
Across second slot line and isolated island；
High pressure external electrode is connected one to one by high resistant offset line and the isolated island, and low pressure external electrode is biased by high resistant
Line is connect with the ground wire；
Multiple integrated switch units of the resonator element are arranged along the first slot line extending direction interval.
2. tunable band-stop filter according to claim 1, which is characterized in that the resonator list being located on the ground wire of the same side
The quantity of member is multiple, and is spaced setting successively along the first slot line extending direction；
The equivalent electrical length being spaced between any two adjacent resonator elements is default electrical length.
3. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the resonator element tool
There is symmetrical structure, and the plane of symmetry is vertical with the first slot line extending direction line.
4. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the gap ring is rectangle
Gap ring.
5. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the substrate be High Resistivity Si,
Any one of glass, aluminium oxide, GaAs.
6. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the tunable band-stop filtering
Device is made up of surface sacrificial process or body processing technology.
7. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the metal layer use gold,
Any one of aluminium, copper, silicon-aluminum mixture, titanium alloy, platinum are made.
8. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that the high resistant offset line by
Polylith square resistance connects to be formed.
9. according to claims 1 or 2 any one of them tunable band-stop filter, which is characterized in that outside the high resistant offset line
Side is covered with silicon nitride medium layer, the metal layer and the high resistant offset line is isolated.
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| CN201610462927.6A CN105870555B (en) | 2016-06-23 | 2016-06-23 | A kind of tunable band-stop filter |
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| CN201610462927.6A CN105870555B (en) | 2016-06-23 | 2016-06-23 | A kind of tunable band-stop filter |
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| CN105870555B true CN105870555B (en) | 2018-09-28 |
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| WO2010077311A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Multi-port mechanical resonating devices and related methods |
| CN101777677A (en) * | 2010-01-21 | 2010-07-14 | 北京邮电大学 | Tunable bandpass filter based on MEMS (microelectronics mechanical system) technology |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8610517B2 (en) * | 2010-11-02 | 2013-12-17 | Raytheon Company | Surface acoustic wave resonator mounting with low acceleration sensitivity |
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2016
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010077311A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Multi-port mechanical resonating devices and related methods |
| CN101777677A (en) * | 2010-01-21 | 2010-07-14 | 北京邮电大学 | Tunable bandpass filter based on MEMS (microelectronics mechanical system) technology |
Non-Patent Citations (1)
| Title |
|---|
| 硅基共面波导RF MEMS开关设计关键技术研究;樊森;《中国博士学位论文全文数据库》;20150430;全文 * |
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