CN105870555A - Adjustable bandstop filter - Google Patents
Adjustable bandstop filter Download PDFInfo
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- CN105870555A CN105870555A CN201610462927.6A CN201610462927A CN105870555A CN 105870555 A CN105870555 A CN 105870555A CN 201610462927 A CN201610462927 A CN 201610462927A CN 105870555 A CN105870555 A CN 105870555A
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- Prior art keywords
- line
- stop filter
- slot line
- tunable band
- crack
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
Abstract
The embodiment of the invention discloses an adjustable bandstop filter. The filter comprises a metal layer, a substrate, a resonator unit, a low-voltage external electrode and a high-resistance offset line, wherein two first crack lines are used for dividing the metal layer into a signal line and two earth lines located on the two sides of the signal line respectively; the adjustable bandstop filter is symmetrical relative to the transverse central line of the signal line; the resonator unit comprises a plurality of crack rings, a plurality of crack connection lines and a plurality of integrated switching units, which are arranged on the earth line on the same side; the plurality of crack rings are distributed at intervals along the extending direction of the first crack line and are communicated in sequence through the crack connection lines; each integrated switching unit comprises a second crack line and an MEMS (Micro-electromechanical Systems) switch; each MEMS switch comprises a bridge pier, a cantilever beam, a contact body and a high-voltage external electrode; and the plurality of integrated switching units of the resonator unit are arranged at intervals along the extending direction of the first crack lines. With the adoption of the embodiment of the invention, the functions that the central frequency of the bandstop filter can be adjusted and the bandstop filter can be used as a through transmission line can be realized, and the reliability of adjusting the central frequency can be improved.
Description
Technical field
The present invention relates to radio-frequency micro electromechanical system technical field, particularly to a kind of tunable band-stop filter.
Background technology
Wave filter is the core component of communication system, band elimination filter (bandstop filters is called for short BSF)
Refer to by most of frequency components, but the frequency component of some scope is decayed to the filtering of extremely low level
Device.Tunable band-stop filter can replace multiple non-dimmable band elimination filter function, and system cost is greatly reduced,
Based on the co-planar waveguide tunable band-stop filter of MEMS technology there is low cost, small size, be easily integrated
Advantage, be the study hotspot in international communication field.
Traditional co-planar waveguide tunable band-stop filter is that to realize resonator humorous by changing mems switch height
The change of vibration frequency, so design cause: the degree of regulation of mid frequency is along with the increase of access times, anxious
Falling sharply low, the reliability of wave filter work is relatively low.This is primarily due to: the regulation of mems switch height is
Being realized by the deformation of switch beam, repeatedly after regulation, switch beam easily produces fatigue, switchs depth of beam
Positioning precision drastically declines.Meanwhile, existing tunable filter uses only as wave filter, it is impossible to as
Straight-through transmission line uses, and so brings a lot of inconvenience to use.
Summary of the invention
The purpose of the embodiment of the present invention is to provide a kind of tunable band-stop filter, to realize band elimination filter
Regulable center frequency, and the function that can use as straight-through transmission line, and mid frequency regulation can be improved
Reliability.
For reaching above-mentioned purpose, the embodiment of the invention discloses a kind of tunable band-stop filter, technical scheme is such as
Under:
A kind of tunable band-stop filter, including metal level, substrate, resonator element, low pressure external electrode and
High resistant offset line；
Described metal level covers over the substrate, and described metal level is provided with two the first slot line, described
Article two, the first slot line described metal level is divided into holding wire and two lay respectively at described holding wire both sides
Ground wire；
Described tunable band-stop filter is symmetrical about the cross central line of described holding wire；
Described resonator element includes: be arranged on multiple gaps ring on the ground wire of the same side, multiple gaps connecting line
With multiple integrated switch unit；
Multiple described gaps ring is spaced apart along described first slot line bearing of trend and passes sequentially through gap connection
Line connects；
Integrated switch unit includes the second slot line and mems switch, described second slot line and close the
One slot line surrounds isolated island, and the second slot line connects with arbitrary gap connecting line；
Described mems switch includes bridge pier, cantilever beam, contact, high pressure external electrode；The first of bridge pier
End and contact are separately fixed at the two ends of cantilever beam the same side, and the second end of bridge pier is fixed on ground wire, edge
First slot line bearing of trend, cantilever beam is across described second slot line and isolated island；
High pressure external electrode is connected one to one with described isolated island by high resistant offset line, and low pressure external electrode leads to
Cross high resistant offset line to be connected with described ground wire；
Multiple integrated switch unit of described resonator element are arranged along the first slot line bearing of trend interval.
Preferably, the quantity of the resonator element being positioned on the ground wire of the same side is multiple, and along the first slot line
Bearing of trend is spaced setting successively；
Between arbitrary two adjacent described resonator elements, the equivalent electric length at interval is default electrical length.
Preferably, described resonator element has symmetrical structure, and the plane of symmetry extends with described first slot line
Line of direction is vertical.
Preferably, described gap ring is rectangular aperture ring.
Preferably, any one during described substrate is High Resistivity Si, glass, aluminium oxide, GaAs.
Preferably, described tunable band-stop filter is made by surface sacrificial process or body processing technology.
Preferably, appointing during described metal level uses gold, aluminum, copper, silicon-aluminum mixture, titanium alloy, platinum
One is made.
Preferably, described high resistant offset line is formed by the series connection of polylith square resistance.
Preferably, outside described high resistant offset line, it is covered with silicon nitride medium layer, to isolate described metal level and institute
State high resistant offset line.
In summary, a kind of tunable band-stop filter that the embodiment of the present invention provides, signal two-way component is respectively
From the gap ring transmission of the first slot line resonator unit, produce phase contrast, form resonance circuit, resonance
Point is 1/2nd wavelength, thus realizes the function of band elimination filter.Outside by high pressure external electrode and low pressure
Putting electrode and control ground wire corresponding to mems switch and the pressure reduction of isolated island, cantilever beam deforms upon or recovers, making
Contact and ground contact or separate, it is achieved the break-make of mems switch.By to multiple integrated switch lists
The combination of the mems switch of unit controls, thus it is possible to vary component of signal path-length in the ring of gap,
Change the phase contrast of two paths of signals component, thus realize the adjustment of filter centre frequency.As all MEMS
When switch contacts is all with ground contact, component of signal can not enter gap ring transmission, now, can realize straight
The function of logical transmission line.By then passing through control contact and ground contact or separating and realize filter center frequency
The regulation of rate, realizes mid frequency relative in prior art by the switch beam height of control mems switch
Regulation, it is possible to increase filter centre frequency regulation reliability.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to enforcement
In example or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that, describe below
In accompanying drawing be only some embodiments of the present invention, for those of ordinary skill in the art, do not paying
On the premise of going out creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The structural representation of a kind of tunable band-stop filter that Fig. 1 provides for the embodiment of the present invention；
Structural representation when Fig. 2 is not load mems switch in Fig. 1；
Fig. 3 is that the A-A in Fig. 2 is to sectional structure schematic diagram；
Fig. 4 is the B portion enlarged drawing in Fig. 3；
A kind of tunable band-stop filter structural representation that Fig. 5 provides for another embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clearly
Chu, be fully described by, it is clear that described embodiment be only a part of embodiment of the present invention rather than
Whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making creation
The every other embodiment obtained under property work premise, broadly falls into the scope of protection of the invention.
With reference to Fig. 1-4, the structure of a kind of tunable band-stop filter that the embodiment of the present invention shown in Fig. 1 provides is shown
It is intended to, structural representation when Fig. 2 is not load mems switch in Fig. 1；Fig. 3 is the A-A in Fig. 2
To sectional structure schematic diagram；Fig. 4 is the B portion enlarged drawing in Fig. 3.This tunable band-stop filter includes metal
Layer 1, substrate 2, resonator element 3, low pressure external electrode 4 and high resistant offset line 5；Wherein, substrate 2
For any one in High Resistivity Si, glass, aluminium oxide, GaAs, it addition, metal level 1 use gold, aluminum,
Any one in copper, silicon-aluminum mixture, titanium alloy, platinum is made, and does not do restriction further at this.
Metal level 1 covers on the substrate 2, and metal level 1 is provided with two the first slot line 6, these two first seams
Metal level 1 is divided into holding wire 101 and two ground wires 102 laying respectively at these holding wire 101 both sides by gap line 6；
Tunable band-stop filter is symmetrical about the cross central line of holding wire 101；Wherein, laterally refer in Fig. 1
Left and right directions, is longitudinally with the most vertical direction.
Resonator element 3 includes: be arranged on multiple gaps ring 31 on the same side ground wire 102, multiple gap connects
Line 32 and multiple integrated switch unit 33；Multiple gaps ring 31 spaced apart along the first slot line 6 bearing of trend and
Pass sequentially through gap connecting line 32 to connect, for transmitted signal component after connection；
It should be noted that owing to tunable band-stop filter is symmetrical about the cross central line of holding wire 101, institute
With the quantity at least two of resonator element 3, and it is symmetricly set on the ground wire 102 of both sides.
Integrated switch unit 33 includes the second slot line 331 and mems switch 332, the second slot line 331 with lean on
The first near slot line 6 surrounds isolated island 7, and the second slot line 331 connects with arbitrary gap connecting line 32；
Mems switch 332 includes bridge pier 3321, cantilever beam 3322, contact 3323, high pressure external electrode
3324；First end of bridge pier 3321 and contact 3323 are separately fixed at the two ends of cantilever beam 3322 the same side,
Second end of bridge pier 3321 is fixed on ground wire 102, and along the first slot line 6 bearing of trend, cantilever beam 3322 is horizontal
Across the second slot line 331 and isolated island 7；
Here mems switch 332 belongs to cantilever beam 3322 and switchs, by the second slot line on ground wire 102
331 cut out isolated island 7, are to be disconnected with isolated island 7 by ground wire 102, when being embodied as, naturally it is also possible to logical
Cross other modes and form isolated island 7, such as, the ground wire 102 corresponding to the lower section of cantilever beam 3322 covers one
Layer silicon nitride layer, silicon nitride layer arranges one piece of sheet metal as isolated island 7, does not limits at this.
High pressure external electrode 3324 is connected one to one with isolated island 7 by high resistant offset line 5, low pressure external electrode 4
It is connected with ground wire 102 by high resistant offset line 5；Multiple integrated switch unit 33 of resonator element 3 are along the first seam
Gap line 6 bearing of trend interval is arranged.When being embodied as, resonator element 3 includes two integrated switch unit 33,
Two integrated switch unit 33 are arranged along the first slot line 6 bearing of trend interval, these two integrated switch unit 33
The second corresponding slot line 331 is all connected with same gap connecting line 32.
It should be noted that high pressure external electrode 3324 and low pressure external electrode 4 are inclined by different high resistants respectively
Put line 5, be connected with isolated island 7 and ground wire 102 respectively, isolated island 7 and ground wire 102 can be loaded high-potential voltage respectively
And low-potential voltage, so that produce pressure reduction between isolated island 7 and ground wire 102, owing to cantilever beam 3322 passes through bridge pier
3321 are connected with ground wire 102 so that also produce pressure reduction between cantilever beam 3322 and ground wire 102.A certain MEMS
Switch after the isolated island 7 of 332 correspondences exists pressure reduction with ground wire 102, formed quiet between isolated island 7 and cantilever beam 3322
Electric power, under the adsorption of electrostatic force, the cantilever beam 3322 of mems switch 332 is bent downwardly deformation, makes
Contact 3323 contacts connection, i.e. mems switch 332 and closes with ground wire 102.Now, the component of signal
Gap ring 31 cannot be entered, as all MEMS by the second slot line 331 of this mems switch 332 correspondence
When the contact of switch 332 all contacts connection with ground wire 102, the component of signal cannot be transmitted by gap ring 31,
All mems switch 332 is in closure state, can only be transmitted by the first slot line 6, now, and this
Bright embodiment does not have filter function, is only equivalent to transmit the straight-through transmission line of signal.
During signal transmission, if the cantilever beam 3322 of certain mems switch 332 is in free state, contact
3323 do not contact connection, i.e. mems switch 332 with ground wire 102 disconnects, and the part component of signal is by being somebody's turn to do
Second slot line 331 of mems switch 332 correspondence enters gap ring 31 and transmits, and mems switch 332 is in disconnected
Open state, by between component of signal and the component of signal by the first slot line 6 transmission of gap ring 31 transmission
Produce phase contrast, form resonance, thus filter function can be realized.By adjusting multiple mems switches 332
Guan Bi or disconnection can change the path-length of signal, and then can change phase contrast such that it is able to real
The adjustment of existing filter centre frequency.
During it should be noted that adjust mid frequency each time or be switched to transmission line state, it is required for every
Individual resonator element 3 does identical adjustment, i.e. their whole mems switches 332 and closes or off-state phase
With.Such as, first mems switch 332 of a resonator element 3 is in disconnection, second MEMS
Switch 332 is in Guan Bi, then first mems switch 332 of other resonator elements 3 and second MEMS
Switch 332 is also required to be adjusted to the most respectively disconnect and Guan Bi, when being embodied as, and can be by each resonator
Unit 3 coordinated signals, can do identical operation to each resonator element 3 simultaneously, certainly, be not limited to this.
In summary, a kind of tunable band-stop filter that the embodiment of the present invention provides, component of signal is respectively from the
The gap ring 31 of one slot line 6 resonator unit 3 transmits, and produces phase contrast, forms resonance circuit, humorous
Shaking is a little 1/2nd wavelength, thus realizes the function of band elimination filter.By high pressure external electrode and low pressure
External electrode 4 controls ground wire 102 and the pressure reduction of isolated island 7 of mems switch 332 correspondence, cantilever beam 3322
Deform upon or recover so that contact 3323 contacts with ground wire 102 or separates, it is achieved mems switch
The Guan Bi of 332 or disconnection.Controlled by the combination of the mems switch 332 to multiple integrated switch unit 33,
Component of signal path-length in gap ring 31 can be changed, change the phase contrast of two paths of signals component,
Thus realize the adjustment of filter centre frequency.When all mems switch 332 contacts 3323 all with ground
When line 102 contacts, component of signal can not enter gap ring 31 and transmit, and now, can realize straight-through transmission line
Function.Contacted with ground wire 102 or separate realize filter centre frequency by then passing through control contact 3323
Regulation, relative in prior art by control mems switch switch beam height realize mid frequency
Regulation, it is possible to increase the reliability of filter centre frequency regulation.
A kind of tunable band-stop filter structural representation provided for another embodiment of the present invention with reference to Fig. 5, Fig. 5,
This embodiment the difference is that only with embodiment illustrated in fig. 1: in the present embodiment, on the same side ground wire 102,
Arranging multiple resonator element 3, these multiple resonator elements 3 are spaced successively along the first slot line 6 bearing of trend and set
Put；Between arbitrary two adjacent resonator elements 3, the equivalent electric length at interval is default electrical length.Specifically
During enforcement, default electrical length can be set to 90 degree.Mems switch 332 in resonator element 3 correspondence
When being completely in disconnection, the corresponding natural frequency of resonator element 3, wavelength corresponding to this natural frequency is λ0,
Then arranging the length of transmission line i.e. between them of the physical separation between two resonator elements 3 is λ0π/2.This
Sample is disposed to make the embodiment of the present invention be obtained in that more preferable amplitude-versus-frequency curve so that it is have more rectangle
Property.
In the present embodiment, resonator element 3 has a symmetrical structure, and the plane of symmetry and the first slot line 6 side of extension
Vertical to line, the filtering performance that can improve wave filter is so set.
In the present embodiment, gap ring 31 is rectangular aperture ring, certainly, in other embodiments, it is also possible to will
Gap ring 31 is arranged to ellipse or circle, concrete what shape of employing, does not do restriction further at this.
During the manufacturing, tunable band-stop filter is made by surface sacrificial process or body processing technology.
When being embodied as, in order to reduce the electric current in high resistant offset line 5, high resistant offset line 5 is set by polylith
Square resistance series connection is formed, it addition, the total resistance value of high resistant line is 100～200k Ω, concrete, high resistant is inclined
Put and outside line 5, be covered with silicon nitride medium layer, with isolating metal layer 1 and high resistant offset line 5.
It should be noted that in this article, the relational terms of such as first and second or the like be used merely to by
One entity or operation separate with another entity or operating space, and not necessarily require or imply these
Relation or the order of any this reality is there is between entity or operation.And, term " includes ", " comprising "
Or its any other variant is intended to comprising of nonexcludability, so that include the mistake of a series of key element
Journey, method, article or equipment not only include those key elements, but also other including being not expressly set out
Key element, or also include the key element intrinsic for this process, method, article or equipment.Do not having
In the case of more restrictions, statement " including ... " key element limited, it is not excluded that including described wanting
Process, method, article or the equipment of element there is also other identical element.
Each embodiment in this specification all uses relevant mode to describe, phase homophase between each embodiment
As part see mutually, what each embodiment stressed is the difference with other embodiments.
For device embodiment, owing to it is substantially similar to embodiment of the method, so the comparison described
Simply, relevant part sees the part of embodiment of the method and illustrates.
One of ordinary skill in the art will appreciate that all or part of step realizing in said method embodiment
The program that can be by completes to instruct relevant hardware, and described program can be stored in computer-readable
Take in storage medium, the storage medium obtained designated herein, such as: ROM/RAM, magnetic disc, CD etc..
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit protection scope of the present invention.
All any modification, equivalent substitution and improvement etc. made within the spirit and principles in the present invention, are all contained in
In protection scope of the present invention.
Claims (9)
1. a tunable band-stop filter, it is characterised in that include metal level, substrate, resonator element,
Low pressure external electrode and high resistant offset line；
Described metal level covers over the substrate, and described metal level is provided with two the first slot line, described
Article two, the first slot line described metal level is divided into holding wire and two lay respectively at described holding wire both sides
Ground wire；
Described tunable band-stop filter is symmetrical about the cross central line of described holding wire；
Described resonator element includes: be arranged on multiple gaps ring on the ground wire of the same side, multiple gaps connecting line
With multiple integrated switch unit；
Multiple described gaps ring is spaced apart along described first slot line bearing of trend and passes sequentially through gap connection
Line connects；
Integrated switch unit includes the second slot line and mems switch, described second slot line and close the
One slot line surrounds isolated island, and the second slot line connects with arbitrary gap connecting line；
Described mems switch includes bridge pier, cantilever beam, contact, high pressure external electrode；The first of bridge pier
End and contact are separately fixed at the two ends of cantilever beam the same side, and the second end of bridge pier is fixed on ground wire, edge
First slot line bearing of trend, cantilever beam is across described second slot line and isolated island；
High pressure external electrode is connected one to one with described isolated island by high resistant offset line, and low pressure external electrode leads to
Cross high resistant offset line to be connected with described ground wire；
Multiple integrated switch unit of described resonator element are arranged along the first slot line bearing of trend interval.
Tunable band-stop filter the most according to claim 1, it is characterised in that be positioned at the same side ground wire
On the quantity of resonator element be multiple, and be spaced setting successively along the first slot line bearing of trend；
Between arbitrary two adjacent described resonator elements, the equivalent electric length at interval is default electrical length.
3. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described humorous
The device unit that shakes has symmetrical structure, and the plane of symmetry is vertical with described first slot line bearing of trend line.
4. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described seam
Gap ring is rectangular aperture ring.
5. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described lining
The end is any one in High Resistivity Si, glass, aluminium oxide, GaAs.
6. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described can
Band elimination filter is adjusted to be made by surface sacrificial process or body processing technology.
7. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described gold
Belonging to layer uses any one in gold, aluminum, copper, silicon-aluminum mixture, titanium alloy, platinum to make.
8. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described height
Resistance offset line is formed by the series connection of polylith square resistance.
9. according to the tunable band-stop filter described in any one of claim 1 or 2, it is characterised in that described height
It is covered with silicon nitride medium layer, to isolate described metal level and described high resistant offset line outside resistance offset line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462927.6A CN105870555B (en) | 2016-06-23 | 2016-06-23 | A kind of tunable band-stop filter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610462927.6A CN105870555B (en) | 2016-06-23 | 2016-06-23 | A kind of tunable band-stop filter |
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| Publication Number | Publication Date |
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| CN105870555A true CN105870555A (en) | 2016-08-17 |
| CN105870555B CN105870555B (en) | 2018-09-28 |
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| CN201610462927.6A Active CN105870555B (en) | 2016-06-23 | 2016-06-23 | A kind of tunable band-stop filter |
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| WO2010077311A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Multi-port mechanical resonating devices and related methods |
| CN101777677A (en) * | 2010-01-21 | 2010-07-14 | 北京邮电大学 | Tunable bandpass filter based on MEMS (microelectronics mechanical system) technology |
| US20120105175A1 (en) * | 2010-11-02 | 2012-05-03 | Raytheon Company | Surface acoustic wave resonator mounting with low acceleration sensitivity |
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2016
- 2016-06-23 CN CN201610462927.6A patent/CN105870555B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010077311A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Multi-port mechanical resonating devices and related methods |
| CN101777677A (en) * | 2010-01-21 | 2010-07-14 | 北京邮电大学 | Tunable bandpass filter based on MEMS (microelectronics mechanical system) technology |
| US20120105175A1 (en) * | 2010-11-02 | 2012-05-03 | Raytheon Company | Surface acoustic wave resonator mounting with low acceleration sensitivity |
Non-Patent Citations (1)
| Title |
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| 樊森: "硅基共面波导RF MEMS开关设计关键技术研究", 《中国博士学位论文全文数据库》 * |
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| CN105870555B (en) | 2018-09-28 |
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