CN105869807A - Preparation method of zinc oxide-bismuth oxide thin film varistor - Google Patents
Preparation method of zinc oxide-bismuth oxide thin film varistor Download PDFInfo
- Publication number
- CN105869807A CN105869807A CN201610286553.7A CN201610286553A CN105869807A CN 105869807 A CN105869807 A CN 105869807A CN 201610286553 A CN201610286553 A CN 201610286553A CN 105869807 A CN105869807 A CN 105869807A
- Authority
- CN
- China
- Prior art keywords
- oxide
- thin film
- zinc
- film
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
- H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a preparation method of a zinc oxide-bismuth oxide thin film varistor, and belongs to the technical field of preparation and application of electronic information materials. The preparation method includes the steps that with non-stoichiometric sintered ZnOn (n<1) as a matrix target and other metals or oxides thereof as doped targets, deposition is carried out on a conductive substrate with a radio-frequency magnetron sputtering method and an optimized sputtering technology, and a low-resistivity zinc oxide thin film is obtained; then, the zinc oxide thin film is buried in bismuth oxide powder for hot dipping, and the zinc oxide-bismuth oxide thin film varistor is obtained. The thin film varistor has the advantages of being excellent in nonlinear property, controllable in varistor voltage, small in leak current and the like, and has broad application prospects in overvoltage protection of large-scale or super-large-scale integrated circuits. According to the method, thin film deposition and hot dipping conditions are strict and controllable, technological repeatability is good, the thin film device uniform in composition, structure and thickness can be obtained on the large-area substrate, and the method is suitable for large-scale production.
Description
Technical field
The present invention relates to the preparation method of a kind of zinc oxide-bismuth oxide thin film piezoresitive device, belong to electronic information material
Preparation and applied technical field thereof.
Background technology
Piezoresistor (Varistor) be at a certain temperature with in particular voltage range, by its electric current along with executing
The semiconductor material devices that the voltage added increases and is increased dramatically, is widely used in suppressing the valve element of transmission line of electricity surge
Over-voltage protection element etc. with various electronic devices and components.
At present, business-like piezoresistor is mainly with ZnO-Bi2O3Composite ceramic material electronic component for base.
And this ZnO varistor material is with zinc oxide, bismuth oxide and other additive metal oxides multiple mixing
Sintering forms, such as (F.Jiang, the et al.Journal of Advanced such as nickel oxide, manganese oxide and rare-earth oxide
Ceramics,2013,2:201-212.).The key structure of this piezo-resistance is that the zinc oxide grain of semiconduction is by high electricity
The Bi of resistance2O3Grain boundary layer is coated with, and the two is mutually combined closely and forms double Schottky barrier between crystal grain, becomes one
Piezo-resistance unit, the most multiple piezo-resistance unit are by being composed in series a piezoresistor.In other words,
ZnO-Bi2O3The pressure-sensitive character of ceramic varistor device is from its grain boundary effect, and its typical structure is zinc oxide grain quilt
Bismuth oxide film is coated with the effective crystal boundary of formation completely；Grain resistance is the lowest, and grain boundary structure is the most complete or resistance is the highest,
Piezo-resistance non-linear the best.
Along with developing rapidly of electronic technology, the size of electronic device constantly reduces, to the small form factor requirements of element day by day
Strongly, operating voltage constantly reduces, and the piezoresistor as protection semiconductor element also must be towards low pressure direction
Development.Realize ZnO-Bi2O3The main path of ceramic varistor device low pressure and miniaturization is: control ZnO brilliant
Particle size and reduction piezo-resistance thickness.Conventional method has solid sintering technology, the tape casting etc..But, solid-phase sintering
Method prepares low-voltage ZnO-Bi2O3Piezoresistor is difficult to minimize further due to the limitation of technology；And prepared by the tape casting
Low-voltage ZnO-Bi2O3Piezoresistor complex technical process, homogeneity of product is poor.On the other hand, due to Surface Engineering
The development of technology, filming becomes an effective way of piezoresistor miniaturization, causes extensive concern.As
Suzuoki etc. utilize rf magnetron sputtering sputtering method to deposited ZnO/Bi on a glass substrate2O3Bilayer film, thickness
Being respectively l μm/0.3 μm, device pressure sensitive voltage is less than 10V, and have bigger nonlinear factor (Y.Suzuoki,
et al.Journal of Physics D,1987,20:511-517).Additionally, use other thin film techniques, such as Sol-Gel
Spray heating decomposition, pulsed laser deposition etc. also can prepare various ZnO polycrystal film piezoresistor.These grind
Studying carefully and show, filming is the effective means of exploitation low-voltage piezoresistor, and filming is conducive to miniaturization of components and collection
Cheng Hua.
In numerous membrane deposition methods, magnetron sputtering method is the film preparing technology of a kind of maturation, is widely used；With
Other method is compared, and it is good that magnetron sputtering method deposited thin film material has tack, and consistency is high, and growth temperature is low, heavy
Long-pending speed is fast, can in different growth atmospheres the advantage such as large-area preparation of thin film material, be considered to be very suitable for
Large-scale industrial production.But, owing to magnetron sputtering method prepares composite zinc oxide-bismuth oxide laminated film and multilayer
The process of zinc oxide/bismuth oxide film piezo-resistance is relative complex or is difficult to build ZnO-Bi2O3Piezoresistor
Typical structure, the ZnO-Bi of preparation hitherto2O3The nonlinear factor of thin film piezoresitive is the most relatively low.
Therefore, the present invention utilizes radio frequency magnetron sputtering method, with the sintering ZnO of non-stoichiometricn(n < 1) is base
Matter target, other metals or its oxide are doping target, under the magnetron sputtering technique optimized, on conductive substrate
Deposition obtains the zinc-oxide film of low-resistivity, is then imbedded and carries out hot dipping in bismuth oxide powder, to building tool
There is the ZnO-Bi of complete crystal boundary2O3The typical structure of piezoresistor, it is thus achieved that high performance zinc oxide-bismuth oxide is thin
Film pressure-sensitive resistance.The thin film piezoresitive device prepared in this way, the composition with material is controlled, simple in construction,
Piezoresistor device shape and film thickness is controlled, compact structure, non-linear behaviour are excellent, pressure sensitive voltage is controlled, electric leakage
Flow the features such as little, have wide practical use in the extensive or overvoltage protection of super large-scale integration.And use
It is the most controlled that this method prepares zinc oxide-bismuth oxide thin film piezoresitive, thin film deposition and hot dipping condition, and technique can
Reproducible, composition, structure and thin-film device in uniform thickness can be obtained on large area substrates, be suitable for scale
Produce.
Summary of the invention
It is an object of the invention to propose the preparation method of a kind of zinc oxide-bismuth oxide thin film piezoresitive.Use this side
Thin film piezoresitive device prepared by method, the zinc oxide grain in rheostat film is oxygen-starved zinc oxide or doping oxidation
Zinc, resistivity is low；And zinc oxide grain oxidized bismuth thin layer is coated with completely, grain boundary structure is complete, defines effective crystalline substance
Boundary, the non-linear behaviour of obtained zinc oxide-bismuth oxide piezo-resistance is excellent.This thin film piezoresitive device,
The composition with material is controlled, simple in construction, piezoresistor device shape and film thickness is controlled, compact structure, non-thread
Property excellent performance, the feature such as pressure sensitive voltage is controlled, leakage current is little, in the extensive or overvoltage of super large-scale integration
Protection has wide practical use.And prepare zinc oxide-bismuth oxide thin film piezoresitive, film in this way
Deposition and hot dipping condition the most controlled, process repeatability is good, can obtain on large area substrates composition, structure and
Thin-film device in uniform thickness, is suitable for large-scale production.
The preparation method of the zinc oxide-bismuth oxide thin film piezoresitive that the present invention proposes, it is characterised in that described method
Utilize radio frequency magnetron sputtering method, use the sintering ZnO of non-stoichiometricn(n < 1) is matrix target, other gold
Belonging to or its oxide is doping target, under the magnetron sputtering technique optimized, on conductive substrate, deposition obtains low resistance
The zinc-oxide film of rate, is then imbedded and is carried out hot dipping in bismuth oxide powder, it is thus achieved that high performance zinc oxide-oxidation
Bismuth thin film piezo-resistance.
The preparation method of the zinc oxide-bismuth oxide thin film piezoresitive that the present invention proposes, comprises the following steps and content:
(1) in magnetron sputtering apparatus, with the sintering ZnO of non-stoichiometricn(n < 1) is matrix target, its
His metal or its oxide are doping target, are fixed on target position by target；Cleaning substrate is fixed on sample stage；
Opening mechanical pump and be evacuated to low vacuum, system vacuum reaches to open molecular pump, until the vacuum of system reaches during 0.1Pa
To 2 × 10-4More than Pa.
(2) it is passed through argon working gas, first carries out pre-sputtering, remove the pollutant of target material surface with this；Work as brightness
After light settles out, start the sputtering sedimentation of zinc-oxide film.
(3) from magnetron sputtering apparatus, take out prepared film sample, the zinc-oxide film prepared is embedded in
Bi2O3Powder carries out hot dipping.After hot dipping, sample is cooled to room temperature with stove.
(4) upper and lower surface (film and substrate) of the sample containing zinc oxide-bismuth oxide laminated film at gained is upper respectively
By electrode, i.e. obtain described piezoresistor.
In above-mentioned preparation method, the magnetron sputtering apparatus in described step (1) is rf magnetron sputtering device.
In above-mentioned preparation method, the sintering ZnO of the non-stoichiometric in described step (1)nMiddle n is at 0.6-0.99
Between.
In above-mentioned preparation method, the doping target in described step (1) be metal Fe, Co, Ni, Mn and
One or more in oxide.
In above-mentioned preparation method, the substrate in described step (1) is in highly doped conductive silicon chip, copper sheet, platinized platinum
One.
In above-mentioned preparation method, in described step (1), the method for substrate cleaning treatment is: first substrate is put into third
Ketone, ethanol are used Ultrasonic Cleaning 10min respectively, removes greasy dirt and other pollutants of substrate surface；Then, warp
Deionized water rinsing；Finally, with being dried N2Vacuum chamber is quickly put into after air-blowing is dry.
In above-mentioned preparation method, the purity of the argon gas in described step (2) is at more than 99.99vol.%.
In above-mentioned preparation method, in described step (2), the argon gas pre-sputtering time is 2-10min.
In above-mentioned preparation method, the zinc-oxide film sputtering sedimentation condition in described step (2) is: with Ar for spattering
Emanate body, at Ar or Ar/O2In mixed gas, at ambient temperature, sputtering ZnOnTarget and doping metals or oxidation
Thing target, sputtering power is 60-220W, and sputtering pressure is 0.4-4.0Pa, and sedimentation time is 20-75min.
In above-mentioned preparation method, in described step (2) when thin film sputtering deposits, the purity of the oxygen used
At more than 99.99vol.%, O2In/Ar mixed gas, the volume ratio of the two is 1-2.
In above-mentioned preparation method, the zinc-oxide film that in described step (2), sputtering sedimentation is obtained is when undoped p
For oxygen-starved zinc-oxide film, it is doping zinc-oxide film when doping.
Bi in above-mentioned preparation method, in described step (3)2O3Powder is that commercially available analysis is pure.
In above-mentioned preparation method, the hot-dip process condition in described step (3) is: in Muffle furnace, temperature is
200-600 DEG C, temperature retention time is 20-120min.
In above-mentioned preparation method, the electrode material in described step (4) is in silver, aluminium, palladium, platinum, gold
Kind.
Using zinc oxide-bismuth oxide thin film piezoresitive device prepared by this technology, the composition with material is controlled, structure
Simply, piezoresistor device shape and film thickness is controlled, compact structure, non-linear behaviour are excellent, pressure sensitive voltage is controlled,
The features such as leakage current is little, have wide practical use in the extensive or overvoltage protection of super large-scale integration.And
And because the thickness of film is controlled, this piezoresistor is either on high working voltage or low-work voltage electrical equipment
Can use.Additionally, prepare zinc oxide-bismuth oxide thin film piezoresitive, thin film deposition and hot dipping in this way
Condition is the most controlled, and process repeatability is good, can obtain composition, structure and in uniform thickness on large area substrates
Thin-film device, is suitable for large-scale production.
Accompanying drawing explanation
Fig. 1 is zinc oxide-bismuth oxide thin film piezoresitive device schematic diagram proposed by the invention
Fig. 2 is THIN COMPOSITE in the oxygen-starved zinc oxide-bismuth oxide thin film piezoresitive device obtained by the embodiment of the present invention 1
The SEM photograph of film
Fig. 3 is the E-J curve of the oxygen-starved zinc oxide-bismuth oxide thin film piezoresitive device obtained by the embodiment of the present invention 1
Fig. 4 is laminated film in the doping zinc-oxide obtained by the embodiment of the present invention 2-bismuth oxide film piezoresistor
SEM photograph
Fig. 5 is the E-J curve of the doping zinc-oxide obtained by the embodiment of the present invention 2-bismuth oxide film piezoresistor
Detailed description of the invention
Below in conjunction with embodiment, technical scheme is described further.
The preparation method of the zinc oxide-bismuth oxide thin film piezoresitive that the present invention proposes, it is characterised in that described method
Utilize radio frequency magnetron sputtering method, use the sintering ZnO of non-stoichiometricn(n < 1) is matrix target, other gold
Belonging to or its oxide is doping target, under the magnetron sputtering technique optimized, on conductive substrate, deposition obtains low resistance
The zinc-oxide film of rate, is then imbedded and is carried out hot dipping in bismuth oxide powder, it is thus achieved that high performance zinc oxide-oxidation
Bismuth thin film piezo-resistance.
The preparation method of the zinc oxide-bismuth oxide thin film piezoresitive that the present invention proposes, comprises the following steps and content:
(1) in rf magnetron sputtering equipment, with the sintering ZnO of non-stoichiometricn(n=0.6-0.99) it is base
One or more in matter target, metal Fe, Co, Ni, Mn and oxide thereof are doping target, are fixed by target
On target position；Cleaning substrate is fixed on sample stage；Opening mechanical pump and be evacuated to low vacuum, system vacuum reaches
Molecular pump is opened, until the vacuum of system reaches 2 × 10 during 0.1Pa-4More than Pa.
(2) it is passed through the argon working gas that purity is more than 99.99vol.%, first carries out pre-sputtering 2-10min,
The pollutant of target material surface is removed with this；After aura settles out, start the sputtering sedimentation of zinc-oxide film.
(3) from magnetron sputtering apparatus, prepared film sample is taken out, in Muffle furnace, the oxidation prepared
Zinc film is embedded in the pure Bi of commercially available analysis2O3Carrying out hot dipping in powder, hot dipping temperature is 200-600 DEG C, temperature retention time is
20-120min.After hot dipping, sample is cooled to room temperature with stove.
(4) one during described substrate is highly doped conductive silicon chip, copper sheet, platinized platinum, the method for its cleaning treatment is:
First substrate is put in acetone, ethanol and use Ultrasonic Cleaning 10min respectively, remove greasy dirt and other dirts of substrate surface
Dye thing；Then, through deionized water rinsing；Finally, with being dried N2Vacuum chamber is quickly put into after air-blowing is dry.
(5) the sputtering sedimentation condition of described zinc-oxide film is: with Ar as sputter gas, at Ar or Ar/O2Mixed
Close in gas, at ambient temperature, sputter ZnOnTarget and doping metals or oxide target, sputtering power is 60-220W,
Sputtering pressure is 0.4-4.0Pa, and sedimentation time is 20-75min.And when thin film sputtering deposits, the oxygen used
Purity at more than 99.99vol.%, O2In/Ar mixed gas, the volume ratio of the two is 1-2；The zinc oxide obtained
Film is oxygen-starved zinc-oxide film when undoped p, is doping zinc-oxide film when doping.
(6) upper and lower surface (film and substrate) of the sample containing zinc oxide-bismuth oxide laminated film at gained is upper respectively
By electrode, i.e. obtain described piezoresistor (see Fig. 1).
(7) one during described electrode material is silver, aluminium, palladium, platinum, gold.
Obtained piezo-resistance film is bluish violet film in appearance.
Under a scanning electron microscope, it may be observed that the surface compact pore-free of gained zinc oxide-bismuth oxide laminated film,
Crystal grain is uniform and circularity is high.Current-voltage performance test shows, the film of this structure has good pressure-sensitive
Characteristic.
In a word, high performance zinc oxide-bismuth oxide thin film piezoresitive device can be obtained by this technology.
Embodiment 1: by ZnO0.78Target and the highly doped conductive silicon substrate of cleaning are fixed on the phase of rf magnetron sputtering equipment
Answer on position, close chamber, first open mechanical pump and be evacuated to low vacuum 0.1Pa, be then turned on molecular pump and be evacuated to high vacuum
2×10-4Pa.It is passed through high-purity argon gas, pre-sputtering 10min.Deposit at ambient temperature, then pass to Ar/O2Than being
The mixed gas of 1:1, sputtering power is 220W, and sputtering pressure is 1.0Pa, and sedimentation time is 20min.Obtain
Oxygen-starved zinc-oxide film.Then, the zinc-oxide film prepared is embedded in analytically pure Bi2O3Powder carries out hot dipping,
Temperature is 400 DEG C, temperature retention time 40min, after sample is cooled to room temperature with stove.It is coated with silver slurry in sample upper and lower surface
As electrode, lead-in wire of burn-oning, i.e. obtain piezoresistor, test its voltage-dependent characteristic.
The oxygen-starved zinc oxide-bismuth oxide laminated film surface compact pore-free obtained, crystal grain is uniformly and circularity
High (see Fig. 2), nonlinear characteristic is excellent (see Fig. 3), and nonlinear factor is 15.1, leakage current minimum 0.0223
mA/cm2, pressure sensitive voltage is 0.0176V/nm.
Embodiment 2: by ZnO0.99Target, pure Fe target and clean highly doped conductive silicon substrate and be fixed on magnetron sputtering and set
On standby relevant position, close chamber, first open mechanical pump and be evacuated to low vacuum 0.1Pa, be then turned on molecular pump and be evacuated to height
Vacuum 2 × 10-4Pa.It is passed through high-purity argon gas, pre-sputtering 2min.Deposit at ambient temperature, the most logical argon gas, simultaneously
Open ZnO0.99Target and pure Fe target, sputtering power is 60W, and sputtering pressure is 2.0Pa, and sedimentation time is 60min.
Obtain Fe2O3 doping zinc-oxide film.Then, the zinc-oxide film prepared is embedded in analytically pure Bi2O3Powder is carried out
Hot dipping, temperature is 500 DEG C, temperature retention time 60min, after sample is cooled to room temperature with stove.In sample upper and lower surface
It is coated with silver to starch as electrode, lead-in wire of burn-oning, i.e. obtains piezoresistor, test its voltage-dependent characteristic.
Oxygen-starved zinc oxide-bismuth oxide laminated film surface compact pore-free (see Fig. 4) obtained, nonlinear characteristic
Excellent (see Fig. 5), nonlinear factor is 11.8, the minimum 0.0306mA/cm of leakage current2, pressure sensitive voltage is 0.0137
V/nm。
Claims (4)
1. the preparation method of a zinc oxide-bismuth oxide thin film piezoresitive device, it is characterised in that described method utilizes radio frequency
Magnetically controlled sputter method, uses the sintering ZnO of non-stoichiometricn(n < 1) is matrix target, other metals or its oxide
For doping target, under the magnetron sputtering technique optimized, on conductive substrate, deposition obtains the zinc-oxide film of low-resistivity,
Then imbedded and bismuth oxide powder carried out hot dipping, it is thus achieved that high performance zinc oxide-bismuth oxide thin film piezoresitive, including with
Lower step:
(1) in rf magnetron sputtering equipment, with the sintering ZnO of non-stoichiometricnFor matrix target, metal
One or more in Fe, Co, Ni, Mn and oxide thereof are doping target, are fixed on target position by target；Will
Cleaning substrate is fixed on sample stage；Opening mechanical pump and be evacuated to low vacuum, system vacuum reaches to open during 0.1Pa to divide
Sub-pump, until the vacuum of system reaches 2 × 10-4More than Pa；
(2) it is passed through argon working gas, first carries out pre-sputtering 2-10min, remove the pollution of target material surface with this
Thing；After aura settles out, at ambient temperature, at argon gas or in argon gas and oxygen mix atmosphere, start oxygen
Change the sputtering sedimentation of zinc film；
(3) from magnetron sputtering apparatus, prepared film sample is taken out, in Muffle furnace, the oxidation prepared
Zinc film is embedded in the pure Bi of commercially available analysis2O3Powder carries out hot dipping；After hot dipping, sample is cooled to room temperature with stove；
(4) upper and lower surface (film and substrate) of the sample containing zinc oxide-bismuth oxide laminated film at gained is upper respectively
By electrode, i.e. obtain described piezoresistor.
2. according to the preparation method described in claim 1, it is characterised in that the ZnO in described step (1)nMatrix target
N value in material is between 0.6-0.99；Described doping target is the one in metal Fe, Co, Ni, Mn and oxide thereof
Or it is multiple；Described substrate is the one in highly doped conductive silicon chip, copper sheet, platinized platinum；Argon gas in described step (2) and
Oxygen is high-purity gas, and purity is at more than 99.99vol.%；Bi in described step (3)2O3Powder is commercially available analysis
Pure；Electrode material in described step (4) is the one in silver, aluminium, palladium, platinum, gold.
3. according to the preparation method described in claim 1, it is characterised in that in described step (2), zinc-oxide film spatters
Penetrating sedimentary condition is: with Ar as sputter gas, at Ar or Ar/O2In mixed gas, at ambient temperature, sputtering ZnOn
Target and doping metals or oxide target, sputtering power is 60-220W, and sputtering pressure is 0.4-4.0Pa, and sedimentation time is 20-75
min；And when thin film sputtering deposits, O2In/Ar mixed gas, the volume ratio of the two is 1-2；The zinc-oxide film obtained
It is oxygen-starved zinc-oxide film when undoped p, is doping zinc-oxide film when doping.
4. according to the preparation method described in claim 1, it is characterised in that zinc-oxide film in described step (3)
Hot-dip process condition is: hot dipping temperature is 200-600 DEG C, and temperature retention time is 20-120min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610286553.7A CN105869807B (en) | 2016-05-03 | 2016-05-03 | A kind of preparation method of zinc oxide bismuth thin film piezoresistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610286553.7A CN105869807B (en) | 2016-05-03 | 2016-05-03 | A kind of preparation method of zinc oxide bismuth thin film piezoresistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105869807A true CN105869807A (en) | 2016-08-17 |
| CN105869807B CN105869807B (en) | 2017-11-24 |
Family
ID=56630178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610286553.7A Expired - Fee Related CN105869807B (en) | 2016-05-03 | 2016-05-03 | A kind of preparation method of zinc oxide bismuth thin film piezoresistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105869807B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106448975A (en) * | 2016-11-16 | 2017-02-22 | 中国地质大学（北京） | Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor |
| CN107293384A (en) * | 2017-06-28 | 2017-10-24 | 中国地质大学（北京） | A kind of preparation method of tin oxide base thin film piezoresistor |
| CN114235904A (en) * | 2021-12-17 | 2022-03-25 | 电子科技大学 | Ppb-level hydrogen sensor and preparation method thereof |
| WO2024055355A1 (en) * | 2022-09-15 | 2024-03-21 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Preparation method for bismuth oxide film and reconfigurable photoelectric logic gate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01259504A (en) * | 1988-04-11 | 1989-10-17 | Empire Airport Service Co Ltd | Manufacture of laminated thin film with resistance nonlinear in voltage |
| CN1564270A (en) * | 2004-04-05 | 2005-01-12 | 广州新日电子有限公司 | Low-temperature sintered ZnO multilayer chip piezoresistor and manufacturing method thereof |
| CN101246770A (en) * | 2008-03-25 | 2008-08-20 | 华东师范大学 | Preparation of high-potential gradient ZnO thick film piezoresistor |
| CN101845615A (en) * | 2010-05-26 | 2010-09-29 | 广东志成冠军集团有限公司 | Method for preparing single crystal transparent ZnO film by adopting RF (Radio Frequency) magnetron sputtering |
| JP2010225725A (en) * | 2009-03-23 | 2010-10-07 | Murata Mfg Co Ltd | Thin film varistor and method of manufacturing the same |
| CN102324291A (en) * | 2011-06-10 | 2012-01-18 | 杭州电子科技大学 | Flexible low-voltage voltage-dependent resistor and production method thereof |
| CN104051100A (en) * | 2014-06-23 | 2014-09-17 | 中国地质大学（北京） | Titanium oxide multilayer thin film varistor and preparation method for same |
-
2016
- 2016-05-03 CN CN201610286553.7A patent/CN105869807B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01259504A (en) * | 1988-04-11 | 1989-10-17 | Empire Airport Service Co Ltd | Manufacture of laminated thin film with resistance nonlinear in voltage |
| CN1564270A (en) * | 2004-04-05 | 2005-01-12 | 广州新日电子有限公司 | Low-temperature sintered ZnO multilayer chip piezoresistor and manufacturing method thereof |
| CN101246770A (en) * | 2008-03-25 | 2008-08-20 | 华东师范大学 | Preparation of high-potential gradient ZnO thick film piezoresistor |
| JP2010225725A (en) * | 2009-03-23 | 2010-10-07 | Murata Mfg Co Ltd | Thin film varistor and method of manufacturing the same |
| CN101845615A (en) * | 2010-05-26 | 2010-09-29 | 广东志成冠军集团有限公司 | Method for preparing single crystal transparent ZnO film by adopting RF (Radio Frequency) magnetron sputtering |
| CN102324291A (en) * | 2011-06-10 | 2012-01-18 | 杭州电子科技大学 | Flexible low-voltage voltage-dependent resistor and production method thereof |
| CN104051100A (en) * | 2014-06-23 | 2014-09-17 | 中国地质大学（北京） | Titanium oxide multilayer thin film varistor and preparation method for same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106448975A (en) * | 2016-11-16 | 2017-02-22 | 中国地质大学（北京） | Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor |
| CN107293384A (en) * | 2017-06-28 | 2017-10-24 | 中国地质大学（北京） | A kind of preparation method of tin oxide base thin film piezoresistor |
| CN107293384B (en) * | 2017-06-28 | 2019-10-01 | 中国地质大学（北京） | A kind of preparation method of tin oxide base thin film piezoresistor |
| CN114235904A (en) * | 2021-12-17 | 2022-03-25 | 电子科技大学 | Ppb-level hydrogen sensor and preparation method thereof |
| WO2024055355A1 (en) * | 2022-09-15 | 2024-03-21 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Preparation method for bismuth oxide film and reconfigurable photoelectric logic gate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105869807B (en) | 2017-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhou et al. | Effects of dopants and hydrogen on the electrical conductivity of ZnO | |
| CN105869807A (en) | Preparation method of zinc oxide-bismuth oxide thin film varistor | |
| Yang et al. | Radio frequency sputter deposition of single phase cuprous oxide using Cu2O as a target material and its resistive switching properties | |
| Lee et al. | Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories | |
| JP2014005538A (en) | Zinc oxide-based sputtering target, method of manufacturing the same, and thin film transistor having shield film evaporated through the same | |
| CN105873881A (en) | Oxide sintered body, method for producing the sintered body, and sputtering target | |
| JP2010030824A (en) | Metal phase-containing indium oxide sintered compact and method for producing the same | |
| TW200403189A (en) | Oxide sintered body | |
| CN104051100B (en) | Titanium oxide multilayer thin film varistor and preparation method for same | |
| CN107293384B (en) | A kind of preparation method of tin oxide base thin film piezoresistor | |
| Niu et al. | High performance and low power consumption resistive random access memory with Ag/Fe2O3/Pt structure | |
| CN110911352B (en) | Diffusion barrier layer for Cu interconnection and preparation method and application thereof | |
| CN112151671B (en) | Organic spin valve device based on two-dimensional metal organic framework thin film material and preparation method | |
| CN110106485B (en) | Negative temperature coefficient thermosensitive film and preparation method thereof | |
| Chen et al. | Effects of preparation parameters on growth and properties of β-Ga2O3 film | |
| Lai et al. | Temperature dependence of resistive switching characteristics in NiO (111) films on metal layer | |
| CN106448975A (en) | Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor | |
| CN107240466B (en) | Voltage nonlinear resistance element and manufacturing method thereof | |
| Hu et al. | Nonvolatile resistive switching and physical mechanism in LaCrO3 thin films | |
| Young et al. | Mg doping effect on the microstructural and optical properties of ZnO nanocrystalline films | |
| Wang et al. | High‐performance varistors prepared by hot‐dipping tin oxide thin films in Sb2O3 powder: Influence of temperature | |
| KR101512819B1 (en) | ZnO BASED SPUTTERING TARGET, METHOD OF FABRICATING THEREOF AND THIN FILM TRANSISTOR HAVING SHIELDING LAYER DEPOSITED BY THE SAME | |
| KR20140006700A (en) | Zno based sputtering target, method of fabricating thereof and thin film transistor having shielding layer deposited by the same | |
| KR102171177B1 (en) | Resistance change memory device with bi-directional rectification characteristics and fabrication method for the same | |
| Koltai et al. | Segregation phenomena in thin NiCr layers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171124 Termination date: 20180503 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |