CN104264111B - Preparation method of tellurium-based composite thin-film and application thereof in MIM (metal injection molding) capacitor - Google Patents
Preparation method of tellurium-based composite thin-film and application thereof in MIM (metal injection molding) capacitor Download PDFInfo
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Abstract
The invention provides a tellurium-based composite thin-film and application thereof in an MIM (metal injection molding) capacitor. The tellurium-based composite thin-film is prepared from Zn2Te3O8 and TiTe3O8 which are composited in a mass ratio of 100:(10-50), and the tellurium-based composite thin-film also can be applied to a capacitor insulating layer in the MIM thin-film capacitor. The tellurium-based composite thin-film disclosed by the invention can be annealed at a low annealing temperature so as to obtain a thin-film capacitor with good performances or the thin-film capacitor is obtained under the condition of no heat treatment implementation, so that the influences caused by high-temperature annealing on the oxidation and the like of metal electrodes can be avoided, thereby simplifying the process, and reducing the production cost, and meanwhile, the thin-film can be compatible with an MMIC (monolithic microwave integrated circuit) low-temperature process; and the obtained tellurium-based composite thin-film disclosed by the invention can achieve the performance requirements of MIM capacitor materials specified in the International Technology Roadmap for Semiconductors (ITRS).
Description
Technical field
The present invention relates to a kind of ceramic membrane and preparation method thereof, particularly to a kind of telluro laminated film and its in mim
Application in (metal-insulator-metal type) electric capacity.
Background technology
Modern microwave communication technology (mobile communication, satellite communication, military radar, GPS (gps), indigo plant
Tooth technology, WLAN etc.) fast development and extensive integrated, miniaturization, the high stable applied, promote communication equipment
Property and cost degradation.Microwave-medium ceramics are a kind of new function electronic ceramics developing rapidly over more than 30 year, and it has
The advantages of loss is low, frequency-temperature coefficient is little, dielectric constant is high.But, microwave-medium ceramics are limited it is impossible to meet by size
The performance requirement of integrated, miniaturization electronic product, limits the application on microwave dielectric properties.Research shows, if
Microwave dielectric film materials application in microwave integrated circuit, it is special by having the lossy microwave lower than its bulk material
Property, and coupled characteristic also can improve.Thin film circuit includes thin film integrated circuit, thickness/thin film hybrid IC and various thin
Film passive component (as thin film resistor, capacitor, inductor, ptc resistance, ntc resistance, piezo-resistance), thin film circuit is
By certain technique in base substrate deposited thin film material, form various components and parts and/or electronic circuit (or network)
Arrive.
Ceramic membrane refers to use special process technology, ceramic material is made thickness and remains to keep pottery below several microns
One class ceramic material of porcelain superior function.Ceramic membrane is in microelectronics, photoelectronics, integrated optics and microelectromechanical systems
It is with a wide range of applications in field, be one of the forward position studied in the world at present and focus.Its preparation method can be divided into two
Big class: (1) physical method, including vacuum thermal evaporation, direct current and radio-frequency sputtering (inclusion ion beam), laser evaporation and molecular beam
Epitaxy technology；(2) chemical method, including spray pyrolysis, chemical gaseous phase deposition (cvd), sol-gel (sol-gel) and metal
Organic vapor phase deposition (mocvd) method etc..Every kind of method is required to provide suitable atomic current on substrate the composition so that needing
Film in substrate surface controllable growth.Various preparation methods all respectively have its merits and demerits, but can be according to different materials
Object and application target select suitable technology.
Microwave-medium ceramics are widely used in the block device such as dielectric resonator, diectric antenna, dielectric filter, multiplexer
Part, but the filming research of microwave-medium ceramics and application are still rare.In view of the dielectric loss of film, it is mainly based upon one
The research of the film of class porcelain, including sino (ε～4-7), al2o3(ε～10), hfo2(ε～22) and ta2o5(ε～25) etc., it
There is suitable dielectric constant and the loss lower than high dielectric material, but according to semiconductor International Technology Roadmap
(itrs) it is desirable to simulation and RF IC capacitance density are more than 10ff/ μm2, need to keep excellent electrology characteristic: leakage simultaneously
Electric current is less than 10na cm-2@5v, non-linear to voltage is less than 100ppm/v2, quality factor q is more than 50@1ghz.And report now
The dielectric material that much can be used for mim electric capacity is all unable to reach requirement in one aspect.For example, al2o3Film has low-leakage current,
But it has larger voltage coefficient of capacitance (vcc about 2000ppm/v2)；Mix ta2o5Al2o3Film has high capacitance density and low
Leakage current, but q value relatively low (about 40)；hfo2Film and hfo2-al2o3Multilayer film shows high capacitance density and low-leakage current, but
Their vcc is high, and the high frequency q factor is not yet studied.Therefore, in order to obtain good microwave dielectric property, thin-film material needs
The heat treatment of higher temperature to be carried out, for example, tio2(550～700 DEG C), ta2o5(500～800 DEG C), al2o3(600～800
DEG C), bnst (780～850 DEG C) etc..But when preparing device on the semiconductors such as gaas or pcb, often require that can not have too high
Treatment temperature, in addition the oxidizing temperature of most of metal electrode is relatively low, such as al (500 DEG C), cu (200 DEG C), au (400 DEG C),
Mo (300 DEG C), ni (400 DEG C), high heat treatment temperature can lead to the oxidation of metal electrode, so be badly in need of find one kind have good
The K cryogenic treatment thin-film material of good microwave dielectric property.
Content of the invention
The present invention is directed to the defect that background technology exists it is proposed that a kind of telluro laminated film and its in mim (metal-absolutely
Edge body-metal) application in thin-film capacitor, the telluro laminated film that the present invention provides can be annealed at low temperature, does not even pass through
Obtain the thin-film capacitor of function admirable under conditions of heat treatment, simplify technique, reduce cost.
Technical scheme is as follows:
A kind of telluro laminated film is it is characterised in that described telluro laminated film is zn2te3o8And tite3o8It is compounded to form
Film.
Further, described zn2te3o8And tite3o8Mass percent than for 100:(10～50).
A kind of mim thin-film capacitor, is followed successively by bottom electrode metal level, capacitive insulating layer, upper electrode metal layer from top to bottom, its
It is characterised by, described capacitive insulating layer is telluro laminated film, described telluro laminated film is zn2te3o8And tite3o8Complex
The film becoming.
Further, described zn2te3o8And tite3o8Mass percent than for 100:(10～50).
Further, described upper and lower electrode metal layer is the conductive materials such as gold.
A kind of preparation method of telluro laminated film, comprises the following steps:
Step 1: zn is prepared using solid sintering technology2te3o8-tite3o8Composite ceramics target: by zno2With teo2In molar ratio
2:3 weighing mixes, and a ball milling is simultaneously dried, tio2With teo21:3 weighing in molar ratio mixes, and a ball milling is simultaneously dried, after drying
Zno2-teo2Powder pre-burning at 500 DEG C obtains zn2te3o8, tio after drying2-teo2Powder pre-burning at 570 DEG C obtains
tite3o8；By zn2te3o8Powder and tite3o8Powder weighing mixes and carries out secondary ball milling, granulates and dries；By above-mentioned drying
Powder pressing be disk sintering, obtain zn2te3o8-tite3o8Composite ceramics target；
Step 2: sputtered film: the zn being obtained using step 12te3o8-tite3o8Composite ceramics target as target, 5 ×
10-4The back end vacuum of pa, volume flow ratio are the o of 1:0.2～52Under the mixed-gas atmosphere of ar, sputtering power be 200～
Under conditions of 300w, operating air pressure are 0.48pa, sputter using the method for rf magnetron sputtering that to obtain telluro compound on substrate
Film.
Wherein, the zn described in step 12te3o8Powder and tite3o8The mass ratio of powder is 1:0.1～0.5.
A kind of preparation method of mim thin-film capacitor, comprises the following steps:
Step 1: cleaning substrate；
Step 2: prepare hearth electrode；
Step 3: the preparation of telluro laminated film: the mass percent being prepared using solid sintering technology is than for 100:
The zn of (10～50)2te3o8And tite3o8Compound ceramic target as target, 5 × 10-4The back end vacuum of pa, volume flow
Than the o for 1:0.2～52Under the mixed-gas atmosphere of ar, sputtering power is 200～300w, operating air pressure is the bar of 0.48pa
Under part, the telluro laminated film obtaining that thickness is 20～1000nm is sputtered on hearth electrode using the method for rf magnetron sputtering.
Step 4: preparation Top electrode.
Further, following steps can also be added before above-mentioned steps 3 and step 4: the band telluro that step 3 is obtained
The substrate of laminated film is placed in batch-type furnace, and anneal at 300～400 DEG C 60～90min, then with 0.5～1.5 DEG C/min's
After rate of temperature fall is down to 200 DEG C, naturally cool to room temperature.
Wherein, the substrate described in step 1 is the modified aluminas (al being crossed by glaze2o3), monocrystalline silicon (si), lanthanum aluminate
(laalo3), sapphire (α-al2o3) etc..
The invention has the benefit that the telluro laminated film in the present invention can be annealed in relatively low annealing temperature, or
Without the thin-film capacitor obtaining function admirable under conditions of Overheating Treatment, high annealing can be avoided to shadows such as the oxidations of metal electrode
Ring, simplify technique, reduce production cost, meanwhile, can be compatible with mmic (monolithic integrated microwave circuit) low temperature process；This
The performance that the bright telluro laminated film obtaining can reach the mim capacitance material that semiconductor International Technology Roadmap (itrs) specifies will
Ask.
Brief description
The eds figure of the telluro laminated film that Fig. 1 obtains for the embodiment of the present invention 1.
The sem figure of the telluro laminated film that Fig. 2 obtains for the embodiment of the present invention 1.
The electrical property of the telluro laminated film that Fig. 3 obtains for the embodiment of the present invention 1.
The matched curve of the voltage coefficient of capacitance (vcc) of the telluro laminated film that Fig. 4 obtains for the embodiment of the present invention 1.
The electrical property of the telluro laminated film that Fig. 5 obtains for the embodiment of the present invention 2.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment describe in detail technical scheme.
A kind of telluro laminated film is it is characterised in that described telluro laminated film is zn2te3o8And tite3o8It is compounded to form
Film.
Further, described zn2te3o8And tite3o8Mass percent than for 100:(10～50).
A kind of mim thin-film capacitor, is followed successively by bottom electrode metal level, capacitive insulating layer, upper electrode metal layer from top to bottom,
It is characterized in that, described capacitive insulating layer is telluro laminated film, and described telluro laminated film is zn2te3o8And tite3o8Compound
The film being formed.
Further, described zn2te3o8And tite3o8Mass percent than for 100:(10～50).
Further, described upper and lower electrode metal layer is the conductive materials such as gold.
A kind of preparation method of telluro laminated film, comprises the following steps:
Step 1: zn is prepared using solid sintering technology2te3o8-tite3o8Composite ceramics target: by zno2With teo2In molar ratio
2:3 weighing mixes, and a ball milling 24h is simultaneously dried, tio2With teo21:3 weighing in molar ratio mixes, and a ball milling 24h is simultaneously dried,
Zno after drying2-teo2Powder pre-burning at 500 DEG C obtains zn2te3o8Powder, the tio after drying2-teo2Powder is at 570 DEG C
Lower pre-burning obtains tite3o8Powder；By zn2te3o8Powder and tite3o8Powder mixes than weighing according to the quality of 1:0.1～0.5
And carry out secondary ball milling, add paraffin granulation after drying, be subsequently placed in 160 DEG C～165 DEG C drying 30min of baking oven, cooling；Will be upper
The powder pressing stating drying is diameter 147mm, thickness is the disk of 7mm；Then the disk obtaining compacting is sintered:
Rise to 600 DEG C with the speed of 2 DEG C/min, be incubated 120min, finally Temperature fall after 200 DEG C be down to the speed of 0.5 DEG C/min.
Step 2: sputtered film: the zn being obtained using step 12te3o8-tite3o8Composite ceramics target as target, 5 ×
10-4The back end vacuum of pa, volume flow ratio are the o of 1:0.2～52Under the mixed-gas atmosphere of ar, sputtering power be 200～
Under conditions of 300w, operating air pressure are 0.48pa, sputter using the method for rf magnetron sputtering that to obtain telluro compound on substrate
Film.
A kind of preparation method of mim thin-film capacitor, comprises the following steps:
Step 1: the process of substrate and cleaning: the silicon chip cleaning up is adopted one layer of 500nm thickness of wet oxidation
sio2；Then place the substrate in acetone and boil 5 minutes, after drying, deionized water is rinsed；Boil 5 minutes in alcohol,
Dried up with nitrogen afterwards；
Step 2: prepare hearth electrode: load onto respectively in evaporated device vacuum interior and be wound with spun gold and (increase gold with nickel chromium triangle
Adhesive force) silk tungsten filament, in substrate frame installation steps 1 cleaning after substrate, back end vacuum be 5 × 10-3Pa, 250 DEG C
At a temperature of, on substrate, gold evaporation thickness is the au/nicr hearth electrode of 100nm；
Step 3: the preparation of telluro laminated film: the mass percent being prepared using solid sintering technology is than for 100:
The zn of (10～50)2te3o8And tite3o8Compound ceramic target as target, 5 × 10-4The back end vacuum of pa, volume flow
Than the o for 1:0.2～52Under the mixed-gas atmosphere of ar, sputtering power is 200～300w, operating air pressure is the bar of 0.48pa
Under part, the telluro laminated film that thickness is 20～1000nm is prepared on hearth electrode using the method for rf magnetron sputtering.
Step 4: preparation Top electrode: (boil in acetone 5 minutes, then boil in alcohol after the substrate cleaning that step 3 is obtained
Boiling 5 minutes) it is placed in the substrate frame of evaporation vacuum interior, load onto respectively in evaporated device vacuum interior and be wound with spun gold and nickel chromium triangle
The tungsten filament of (increasing the adhesive force of gold) silk, is 5 × 10 in back end vacuum-3Pa, at a temperature of 250 DEG C, on substrate, gold evaporation is thick
Spend the au/nicr Top electrode for 100nm.
Wherein, following steps can also be added before step 4 preparation Top electrode: the band telluro that step 3 is obtained is combined
The substrate of film is placed in batch-type furnace, and anneal under air conditionses, at 300～400 DEG C 60～90min, then with 0.5～1.5
DEG C/after the rate of temperature fall of min is down to 200 DEG C, naturally cool to room temperature.
Further, the substrate described in step 1 is the modified aluminas (al being crossed by glaze2o3), monocrystalline silicon (si), aluminic acid
Lanthanum (laalo3), sapphire (α-al2o3) etc..
Embodiment 1
A kind of telluro laminated film, described telluro laminated film is zn2te3o8And tite3o8It is 100 by mass percentage:
30 films being compounded to form.
A kind of mim thin-film capacitor, is followed successively by bottom electrode metal level, capacitive insulating layer, upper electrode metal layer from top to bottom, its
It is characterised by, described capacitive insulating layer is telluro laminated film, described telluro laminated film is zn2te3o8And tite3o8By quality
The film that percentage is compounded to form for 100:30.
A kind of preparation method of telluro laminated film, comprises the following steps:
Step 1: zn is prepared using solid sintering technology2te3o8-tite3o8Composite ceramics target: by zno2With teo2In molar ratio
2:3 weighing mixes, and a ball milling 24h is simultaneously dried, tio2With teo21:3 weighing in molar ratio mixes, and a ball milling 24h is simultaneously dried,
Zno after drying2-teo2Powder pre-burning at 500 DEG C obtains zn2te3o8Powder, the tio after drying2-teo2Powder is at 570 DEG C
Lower pre-burning obtains tite3o8Powder；By zn2te3o8Powder and tite3o8Powder is gone forward side by side than weighing mixing according to the quality of 1:0.3
Row secondary ball milling, adds the paraffin of 7% mass percent to granulate after drying, be subsequently placed in 160 DEG C～165 DEG C drying of baking oven
30min, cooling；2min that the powder of above-mentioned drying is pressurizeed under 120mpa is compressed to diameter 147mm, thickness is the disk of 7mm；
Then the disk that obtains of compacting is sintered: rise to 600 DEG C with the speed of 2 DEG C/min, be incubated 120min, finally with
The speed of 0.5 DEG C/min be down to 200 DEG C after Temperature fall.
Step 2: sputtered film: the zn being obtained using step 12te3o8-tite3o8Composite ceramics target as target, 5 ×
10-4The back end vacuum of pa, volume flow ratio are the o of 1:22Under the mixed-gas atmosphere of ar, sputtering power is 200w, work gas
Under conditions of pressing as 0.48pa, sputtered on substrate using the method for rf magnetron sputtering and obtain the telluro for 800nm for the thickness again
Close film.
A kind of preparation method of mim thin-film capacitor, comprises the following steps:
Step 1: the process of substrate and cleaning: using p-type (100) monocrystalline silicon (thickness is 0.5mm) as substrate, wet method oxygen
Change the thick sio of one layer of 500nm2；Then place the substrate in acetone and boil 5 minutes, after drying, deionized water is rinsed；In alcohol
In boil 5 minutes, finally dried up with nitrogen；
Step 2: prepare hearth electrode: load onto respectively in evaporated device vacuum interior and be wound with spun gold and (increase gold with nickel chromium triangle
Adhesive force) silk tungsten filament, in substrate frame installation steps 1 cleaning after substrate, back end vacuum be 5 × 10-3Pa, 250 DEG C
At a temperature of, on substrate, gold evaporation thickness is the au/nicr hearth electrode of 100nm；
Step 3: the preparation of telluro laminated film: the mass percent being prepared using solid sintering technology is than for 100:30
Zn2te3o8And tite3o8Compound ceramic target as target, 5 × 10-4The back end vacuum of pa, volume flow ratio are 1:2
O2Under the mixed-gas atmosphere of ar, sputtering power be 200w, operating air pressure be 0.48pa under conditions of, using radio frequency magnetron
The method of sputtering prepares the telluro laminated film that thickness is 800nm on hearth electrode；
Step 4: preparation Top electrode: (boil in acetone 5 minutes, then boil in alcohol after the substrate cleaning that step 3 is obtained
Boiling 5 minutes) it is placed in the substrate frame of evaporation vacuum interior, load onto respectively in evaporated device vacuum interior and be wound with spun gold and nickel chromium triangle
The tungsten filament of (increasing the adhesive force of gold) silk, is 5 × 10 in back end vacuum-3Pa, at a temperature of 250 DEG C, on substrate, gold evaporation is thick
Spend the au/nicr Top electrode for 100nm.
The eds figure of the telluro laminated film that Fig. 1 prepares for embodiment 1.As shown in Figure 1, the telluro preparing is multiple
The composition closing film is essentially identical with ceramic component.The sem figure of the telluro laminated film that Fig. 2 obtains for embodiment 1.Can by Fig. 2
Know, the telluro laminated film preparing is fine and close, surfacing.The electrical property of the film that Fig. 3 obtains for embodiment 1.Can by Fig. 3
Know, the telluro laminated film thickness that embodiment 1 obtains is about 800nm, and thin-film electro is functional, dielectric constant is about 27.5, damage
Consumption is about 1%.The matched curve of the voltage coefficient of capacitance (vcc) of the telluro laminated film that Fig. 4 obtains for embodiment 1.Can by Fig. 4
Know, the non-linear to voltage of the telluro laminated film that embodiment 1 obtains is less than 8.0ppm/v2, it is entirely capable of reaching mim capacitance material
Require.
Embodiment 2
A kind of telluro laminated film, described telluro laminated film is zn2te3o8And tite3o8It is 100 by mass percentage:
30 films being compounded to form.
A kind of mim thin-film capacitor, is followed successively by bottom electrode metal level, capacitive insulating layer, upper electrode metal layer from top to bottom, its
It is characterised by, described capacitive insulating layer is telluro laminated film, described telluro laminated film is zn2te3o8And tite3o8By quality
The film that percentage is compounded to form for 100:30.
A kind of preparation method of telluro laminated film, comprises the following steps:
Step 1: zn is prepared using solid sintering technology2te3o8-tite3o8Composite ceramics target: by zno2With teo2In molar ratio
2:3 weighing mixes, and a ball milling 24h is simultaneously dried, tio2With teo21:3 weighing in molar ratio mixes, and a ball milling 24h is simultaneously dried,
Zno after drying2-teo2Powder pre-burning at 500 DEG C obtains zn2te3o8Powder, the tio after drying2-teo2Powder is at 570 DEG C
Lower pre-burning obtains tite3o8Powder；By zn2te3o8Powder and tite3o8Powder is gone forward side by side than weighing mixing according to the quality of 1:0.3
Row secondary ball milling, adds the paraffin of 7% mass percent to granulate after drying, be subsequently placed in 160 DEG C～165 DEG C drying of baking oven
30min, cooling；2min that the powder of above-mentioned drying is pressurizeed under 120mpa is compressed to diameter 147mm, thickness is the disk of 7mm；
Then the disk that obtains of compacting is sintered: rise to 600 DEG C with the speed of 2 DEG C/min, be incubated 120min, finally with
The speed of 0.5 DEG C/min be down to 200 DEG C after Temperature fall.
Step 2: sputtered film: the zn being obtained using step 12te3o8-tite3o8Composite ceramics target as target, 5 ×
10-4The back end vacuum of pa, volume flow ratio are the o of 1:22Under the mixed-gas atmosphere of ar, sputtering power is 200w, work gas
Under conditions of pressing as 0.48pa, sputtered on substrate using the method for rf magnetron sputtering and obtain the telluro for 800nm for the thickness again
Close film.
Step 3: the substrate with telluro laminated film that step 2 is obtained is placed in batch-type furnace, in air atmosphere,
At the uniform velocity it is warmed up to 400 DEG C by room temperature in 400 minutes, be incubated 60min, be then down to 200 DEG C with the rate of temperature fall of 0.5 DEG C/min
Afterwards, naturally cool to room temperature, that is, obtain described telluro laminated film.
A kind of preparation method of mim thin-film capacitor, comprises the following steps:
Step 1: the process of substrate and cleaning: using p-type (100) monocrystalline silicon (thickness is 0.5mm) as substrate, wet method oxygen
Change the thick sio of one layer of 500nm2；Then place the substrate in acetone and boil 5 minutes, after drying, deionized water is rinsed；In alcohol
In boil 5 minutes, finally dried up with nitrogen；
Step 2: prepare hearth electrode: load onto respectively in evaporated device vacuum interior and be wound with spun gold and (increase gold with nickel chromium triangle
Adhesive force) silk tungsten filament, in substrate frame installation steps 1 cleaning after substrate, back end vacuum be 5 × 10-3Pa, 250 DEG C
At a temperature of, on substrate, gold evaporation thickness is the au/nicr hearth electrode of 100nm；
Step 3: the preparation of telluro laminated film: the mass percent being prepared using solid sintering technology is than for 100:30
Zn2te3o8And tite3o8Compound ceramic target as target, 5 × 10-4The back end vacuum of pa, volume flow ratio are 1:2's
Enter o2Under the mixed-gas atmosphere of ar, sputtering power be 200w, operating air pressure be 0.48pa under conditions of, using radio frequency magnetron
The method of sputtering prepares the telluro laminated film that thickness is 800nm on hearth electrode.
Step 4: the substrate with telluro ceramic thin sheet that step 3 is obtained is placed in batch-type furnace, in air atmosphere,
At the uniform velocity it is warmed up to 400 DEG C by room temperature in 400 minutes, be incubated 60min, be then down to 200 DEG C with the rate of temperature fall of 0.5 DEG C/min
Afterwards, naturally cool to room temperature.
Step 5: preparation Top electrode: (boil in acetone 5 minutes, then boil in alcohol after the substrate cleaning that step 4 is obtained
Boiling 5 minutes) it is placed in the substrate frame of evaporation vacuum interior, load onto respectively in evaporated device vacuum interior and be wound with spun gold and nickel chromium triangle
The tungsten filament of (increasing the adhesive force of gold) silk, is 5 × 10 in back end vacuum-3Pa, at a temperature of 250 DEG C, on substrate, gold evaporation is thick
Spend the au/nicr Top electrode for 100nm.
The electrical property of the telluro laminated film that Fig. 5 obtains for embodiment 2.As shown in Figure 5, obtain after embodiment 2 annealing
Telluro laminated film dielectric constant is basically unchanged, and loss is micro- reduction, and curve is smooth-out, slightly carries than unannealed film performance
Rise.
Finally it should be noted that above example is only in order to illustrate technical scheme rather than restriction technologies side
Case, although applicant has been described in detail to the present invention with reference to preferred embodiment, those of ordinary skill in the art should manage
Solution, those are modified to technical scheme or equivalent, the objective without deviating from the technical program and scope,
All should cover in the middle of scope of the presently claimed invention.
Claims (5)
1. a kind of preparation method of telluro laminated film, comprises the following steps:
Step 1: zn is prepared using solid sintering technology2te3o8-tite3o8Composite ceramics target: by zno2With teo22:3 claims in molar ratio
Material mixing, a ball milling is simultaneously dried, tio2With teo21:3 weighing in molar ratio mixes a ball milling and dries, after drying
zno2-teo2Powder pre-burning at 500 DEG C obtains zn2te3o8, tio after drying2-teo2Powder pre-burning at 570 DEG C obtains
tite3o8；By zn2te3o8Powder and tite3o8Powder weighing mixes and carries out secondary ball milling, granulates and dries；By above-mentioned drying
Powder pressing be disk sintering, obtain zn2te3o8-tite3o8Composite ceramics target；
Step 2: sputtered film: the zn being obtained using step 12te3o8-tite3o8Composite ceramics target as target, 5 × 10-4pa
Back end vacuum, volume flow ratio be 1:0.2～5 o2Under the mixed-gas atmosphere of ar, sputtering power be 200～300w,
Under conditions of operating air pressure is 0.48pa, is sputtered on substrate using the method for rf magnetron sputtering and obtain telluro laminated film.
2. the preparation method of telluro laminated film according to claim 1 is it is characterised in that described in step 1
zn2te3o8Powder and tite3o8The mass ratio of powder is 1:0.1～0.5.
3. a kind of preparation method of mim thin-film capacitor, comprises the following steps:
Step 1: cleaning substrate；
Step 2: prepare hearth electrode；
Step 3: the preparation of telluro laminated film: the mass percent being prepared using solid sintering technology than for 100:(10～
50) zn2te3o8And tite3o8Compound ceramic target as target, 5 × 10-4The back end vacuum of pa, volume flow ratio are 1:
0.2～5 o2Under the mixed-gas atmosphere of ar, sputtering power be 200～300w, operating air pressure be 0.48pa under conditions of,
The telluro laminated film obtaining that thickness is 20～1000nm is sputtered on hearth electrode using the method for rf magnetron sputtering；
Step 4: preparation Top electrode.
4. mim thin-film capacitor according to claim 3 preparation method it is characterised in that described step 3 and step 4 it
Between add following steps: the substrate with telluro laminated film that step 3 is obtained is placed in batch-type furnace, moves back at 300～400 DEG C
Fiery 60～90min, is then down to after 200 DEG C with the rate of temperature fall of 0.5～1.5 DEG C/min, naturally cools to room temperature.
5. the preparation method of mim thin-film capacitor according to claim 3 is it is characterised in that the substrate described in step 1 is
The modified aluminas crossed by glaze, monocrystalline silicon, lanthanum aluminate, sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479808.2A CN104264111B (en) | 2014-09-18 | 2014-09-18 | Preparation method of tellurium-based composite thin-film and application thereof in MIM (metal injection molding) capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410479808.2A CN104264111B (en) | 2014-09-18 | 2014-09-18 | Preparation method of tellurium-based composite thin-film and application thereof in MIM (metal injection molding) capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104264111A CN104264111A (en) | 2015-01-07 |
| CN104264111B true CN104264111B (en) | 2017-01-18 |
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