CN102324291A - Flexible low-voltage voltage-dependent resistor and production method thereof - Google Patents
Flexible low-voltage voltage-dependent resistor and production method thereof Download PDFInfo
- Publication number
- CN102324291A CN102324291A CN 201110155887 CN201110155887A CN102324291A CN 102324291 A CN102324291 A CN 102324291A CN 201110155887 CN201110155887 CN 201110155887 CN 201110155887 A CN201110155887 A CN 201110155887A CN 102324291 A CN102324291 A CN 102324291A
- Authority
- CN
- China
- Prior art keywords
- film
- bottom electrode
- electrode film
- flexible
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a flexible low-voltage voltage-dependent resistor and a production method thereof. The conventional voltage-dependent resistor is large and cannot be bent, and thereby cannot be applied in flexible devices. The flexible low-voltage voltage-dependent resistor is of a layered structure, and sequentially comprises a flexible substrate, a lower electrode film, a ZnO film and an upper electrode film, the surfaces of the upper and the lower electrode films are respectively connected with an upper electrode lead and a lower electrode lead, the flexible substrate is a PET (polyester) film, and the upper and the lower electrode films are Pt films. The specific production method includes the following steps: a layer of Pt film is deposited on the surface of one side of the flexible substrate to serve as the lower electrode film; by means of the masking technology, part of the lower electrode film is covered, a layer of ZnO film is deposited on the exposed part of the lower electrode film, and the lower electrode lead is bonded; a layer of Pt film is deposited on the ZnO film to serve as the upper electrode film, and the upper electrode lead is bonded. The process of the method is simple, and the produced flexible low-voltage voltage-dependent resistor has unique flexibility and extensibility, and can be bent.
Description
Technical field
The invention belongs to electronic technology field, relate to a kind of low voltage varistor of flexible, and the preparation method of this low voltage varistor.
Background technology
Along with electronic device develops to portability, panelized, flexible, foldable electronic device is more and more received scientific and technical personnel's attention, and flexible electronic device has become research and development focus in recent years.Flexible electronic device is flexible display, flexible triode even flexible existing reports such as mobile phone for example, and numerous instrument and equipment for example cardiac pacemaker, Medical Devices, video camera, hearing aids, printer, scanner etc. all needs the Electronic Protection element of flexible.Yet, also have no talent up to now and propose the Electronic Protection components and parts of flexible.As a kind of protection component, piezo-resistance used widely with various protective circuits in, yet common piezo-resistance volume is big and inflexibility, can not be applied in the equipment of flexible.
Summary of the invention
The object of the invention is exactly the deficiency to prior art, a kind of low voltage varistor of flexible is provided, and the preparation method of this low voltage varistor is provided.
Flexible low voltage varistor of the present invention is a layer structure; Comprise flexible base, board, bottom electrode film, ZnO film and upper electrode film successively, the bottom electrode film covers fully that flexible base, board, ZnO film partly cover the bottom electrode film, upper electrode film covers on the ZnO film; The upper electrode film surface is connected with the top electrode lead-in wire, and the bottom electrode film surface is connected with the bottom electrode lead-in wire;
Described flexible base, board is PET (PETG) film; Described upper electrode film and bottom electrode film are the thick Pt of 15～50nm (platinum) film; Described top electrode lead-in wire and bottom electrode lead-in wire are spun gold or aluminium wire, and the thickness of described ZnO (zinc oxide) film is 10～100nm.
The manufacture method of this flexibility low voltage varistor is following:
Step (1) is chosen flexible PET film as flexible base, board, utilizes the Pt film of magnetron sputtering method deposition one deck 15～50nm at flexible base, board one side surface, as the bottom electrode film; The bottom electrode film covers a side surface of PET film fully;
Step (2) through the mask technique shield portions as the Pt film of bottom electrode film, expose as the Pt film of bottom electrode film on ZnO film through reaction magnetocontrol sputtering deposition one deck 10～100nm; With the bottom electrode wire bonding on the surface that does not deposit ZnO film as the Pt film portion of bottom electrode film;
Step (3) is utilized the Pt film of magnetron sputtering method deposition one deck 15～50nm on ZnO film, as upper electrode film, with the top electrode wire bonding on surface as the Pt film of upper electrode film.
The inventive method technology is simple; The flexible low voltage varistor of making has unique flexibility, ductility; Can be crooked; Can have wide application prospect in fields such as information, the energy, medical treatment, national defence,, have very strong realistic meaning like flexible electronic displays, Organic Light Emitting Diode OLED, printing RFID, thin-film solar cell panel etc.
Description of drawings
Fig. 1 is the structural representation of flexible low voltage varistor of the present invention.
Embodiment
Shown in accompanying drawing 1, a kind of flexible low voltage varistor of layer structure comprises flexible base, board 1, bottom electrode film 2, ZnO film 3 and upper electrode film 4 successively, and bottom electrode film 2 covers flexible base, board 1 fully, ZnO film 3 parts cover bottom electrode film 2; Upper electrode film 4 surfaces are connected with top electrode lead-in wire 5, and bottom electrode film 2 surfaces are connected with bottom electrode lead-in wire 6.
Wherein flexible base, board 1 adopts the PET film, and upper electrode film 4 adopts the thick Pt film of 15～50nm with bottom electrode film 2, and top electrode lead-in wire 5 adopts spun gold or aluminium wire with bottom electrode lead-in wire 6, and the thickness of ZnO film is 10～100nm.
The manufacture method of this flexibility low voltage varistor is following:
Step (1) is chosen flexible PET film as flexible base, board, utilizes the Pt film of magnetron sputtering method deposition one deck 15～50nm at flexible base, board one side surface, as the bottom electrode film; The bottom electrode film covers a side surface of PET film fully;
Step (2) through the mask technique shield portions as the Pt film of bottom electrode film, expose as the Pt film of bottom electrode film on ZnO film through reaction magnetocontrol sputtering deposition one deck 10～100nm; With the bottom electrode wire bonding on the surface that does not deposit ZnO film as the Pt film portion of bottom electrode film;
Step (3) is utilized the Pt film of magnetron sputtering method deposition one deck 15～50nm on ZnO film, as upper electrode film, with the top electrode wire bonding on surface as the Pt film of upper electrode film.
Claims (3)
1. flexible low voltage varistor; It is characterized in that this flexibility low voltage varistor is a layer structure; Comprise flexible base, board, bottom electrode film, ZnO film and upper electrode film successively, the bottom electrode film covers fully that flexible base, board, ZnO film partly cover the bottom electrode film, upper electrode film covers on the ZnO film; The upper electrode film surface is connected with the top electrode lead-in wire, and the bottom electrode film surface is connected with the bottom electrode lead-in wire;
Described flexible base, board is the PET film, and described upper electrode film and bottom electrode film are the Pt film, and described top electrode lead-in wire and bottom electrode lead-in wire are spun gold or aluminium wire.
2. the method for preparing flexible low voltage varistor as claimed in claim 1 is characterized in that the concrete steps of this method are:
Step (1) is chosen flexible PET film as flexible base, board, utilizes the Pt film of magnetron sputtering method deposition one deck 15～50nm at flexible base, board one side surface, as the bottom electrode film; The bottom electrode film covers a side surface of PET film fully;
Step (2) through the mask technique shield portions as the Pt film of bottom electrode film, expose as the Pt film of bottom electrode film on ZnO film through reaction magnetocontrol sputtering deposition one deck 10～100nm; With the bottom electrode wire bonding on the surface that does not deposit ZnO film as the Pt film portion of bottom electrode film;
Step (3) is utilized the Pt film of magnetron sputtering method deposition one deck 15～50nm on ZnO film, as upper electrode film, with the top electrode wire bonding on surface as the Pt film of upper electrode film.
3. a kind of flexible low voltage varistor as claimed in claim 1 is characterized in that: the thickness of described upper electrode film is 15～50nm, and the thickness of described bottom electrode film is 15～50nm, and the thickness of described ZnO film is 10～100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110155887 CN102324291B (en) | 2011-06-10 | 2011-06-10 | Production method of flexible low-voltage voltage-dependent resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110155887 CN102324291B (en) | 2011-06-10 | 2011-06-10 | Production method of flexible low-voltage voltage-dependent resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102324291A true CN102324291A (en) | 2012-01-18 |
| CN102324291B CN102324291B (en) | 2013-03-27 |
Family
ID=45452013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110155887 Active CN102324291B (en) | 2011-06-10 | 2011-06-10 | Production method of flexible low-voltage voltage-dependent resistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102324291B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869807A (en) * | 2016-05-03 | 2016-08-17 | 中国地质大学（北京） | Preparation method of zinc oxide-bismuth oxide thin film varistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083789A (en) * | 1973-11-28 | 1975-07-07 | ||
| US20060163563A1 (en) * | 2005-01-24 | 2006-07-27 | Kurt Ulmer | Method to form a thin film resistor |
| CN201204106Y (en) * | 2008-06-17 | 2009-03-04 | 杭州电子科技大学 | Low-voltage film piezoresistor with adjustable threshold voltage |
| CN202110901U (en) * | 2011-06-10 | 2012-01-11 | 杭州电子科技大学 | Flexible low-voltage piezoresistor |
-
2011
- 2011-06-10 CN CN 201110155887 patent/CN102324291B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5083789A (en) * | 1973-11-28 | 1975-07-07 | ||
| US20060163563A1 (en) * | 2005-01-24 | 2006-07-27 | Kurt Ulmer | Method to form a thin film resistor |
| CN201204106Y (en) * | 2008-06-17 | 2009-03-04 | 杭州电子科技大学 | Low-voltage film piezoresistor with adjustable threshold voltage |
| CN202110901U (en) * | 2011-06-10 | 2012-01-11 | 杭州电子科技大学 | Flexible low-voltage piezoresistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105869807A (en) * | 2016-05-03 | 2016-08-17 | 中国地质大学（北京） | Preparation method of zinc oxide-bismuth oxide thin film varistor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102324291B (en) | 2013-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022104974A (en) | Display device | |
| JP2021036334A (en) | Light-emitting device | |
| CN205375505U (en) | Fingerprint sensor module | |
| CN204808363U (en) | Fingerprint sensor module, has this portable electronic equipment | |
| JP2021168397A (en) | Display device | |
| CN110429089A (en) | Drive backboard and preparation method thereof, display device | |
| CN108475698A (en) | Display device, display module and electronic equipment | |
| CN109075079A (en) | The manufacturing method of stripping means and flexible apparatus | |
| EP2472590A3 (en) | Electrode, photovoltaic device, and method of making | |
| CN106354341B (en) | A kind of touch-control display panel | |
| CN109213366A (en) | Display device and its manufacturing method with integrated touch screen | |
| CN109411513A (en) | Flexible display panels and flexible display apparatus | |
| KR20150092625A (en) | Embedded printed circuit substrate | |
| US10910510B2 (en) | Encapsulated flexible electronic device, and corresponding manufacturing method | |
| CN105405958A (en) | Piezoelectric thin film package structure and self-power-generating flexible display screen | |
| CN202110901U (en) | Flexible low-voltage piezoresistor | |
| CN106648210B (en) | Display panel, preparation method thereof and display device | |
| CN102324291B (en) | Production method of flexible low-voltage voltage-dependent resistor | |
| US20160057858A1 (en) | Touch panel, preparing method thereof, and ag-pd-nd alloy for touch panel | |
| CN106383614A (en) | Touch display panel | |
| CN108365118A (en) | Flexible Displays module | |
| CN102184928A (en) | Display element and method for manufacturing the same | |
| CN111081746A (en) | OLED display panel and manufacturing method thereof | |
| JP5400737B2 (en) | Solar cell module and method for manufacturing solar cell module | |
| CN207560514U (en) | Cover plate assembly and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181107 Address after: 313000 industrial zone of Donglin Town, Wuxing District, Huzhou, Zhejiang Patentee after: Zhejiang far new material Co., Ltd. Address before: 310018 2 street, Xiasha Higher Education Park, Hangzhou, Zhejiang Patentee before: Hangzhou Electronic Science and Technology Univ |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191211 Address after: No.146, Shuangjin Road, Xiannv Town, Jiangdu District, Yangzhou City, Jiangsu Province Patentee after: Yangzhou Zhonggui Motor Technology Co., Ltd Address before: 313000 Zhejiang Province, Huzhou city Wuxing District East Town Industrial Zone Patentee before: Zhejiang far new material Co., Ltd. |