CN105855213A - 硅晶片脱胶工艺 - Google Patents

硅晶片脱胶工艺 Download PDF

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Publication number
CN105855213A
CN105855213A CN201610200158.2A CN201610200158A CN105855213A CN 105855213 A CN105855213 A CN 105855213A CN 201610200158 A CN201610200158 A CN 201610200158A CN 105855213 A CN105855213 A CN 105855213A
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grooves
trough
silicon wafer
water temperature
groove
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Inventor
白青松
张力峰
田利中
邹文龙
梁会宁
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SUZHOU JINGYING PHOTOELECTRIC TECHNOLOGY CO LTD
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SUZHOU JINGYING PHOTOELECTRIC TECHNOLOGY CO LTD
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Priority to CN201610200158.2A priority Critical patent/CN105855213A/zh
Publication of CN105855213A publication Critical patent/CN105855213A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00

Abstract

本发明公开了一种同一晶托上的胶体一起脱落的硅晶片脱胶工艺，采用如下脱胶机，该脱胶机包括一号槽、二号槽、三号槽、四号槽、五号槽和六号槽，一号槽和二号槽的水温是25～30℃，三号槽和四号槽的水温是30℃，五号槽里的是乳酸溶液且温度为65～70℃，乳酸与水的质量比是1∶1.5，六号槽的水温40～45℃，硅晶片先在一号槽和二号槽内分别喷淋550s，然后将硅晶片放到三号槽和四号槽中分别超声处理90s，之后将硅晶片放入五号槽中浸泡450s～500s，最后将硅晶片放入六号槽浸泡50s后取出。本发明的优点是：乳酸的软化胶体就能保证所有硅晶片上的胶体一起脱落，从而避免在脱胶的过程中部分硅晶片氧化。

Description

硅晶片脱胶工艺
技术领域
本发明涉及到一种硅晶片脱胶工艺。
背景技术
硅晶片是由硅棒用胶体黏在晶托上后切割而成的，切割好后的硅晶片需要进行脱胶处理，常规的脱胶工艺存在脱胶不完善，有残胶导致硅晶片报废，或者脱胶的时候，第一片硅晶片脱离开始至最后一片硅晶片脱落的时间过长，在脱胶过程中又不能将先脱好的取出，这样就会导致先脱落硅晶片发生氧化反应，从而使得先脱落的硅晶片报废。
发明内容
本发明所要解决的技术问题是：提供一种同一晶托上的胶体一起脱落的硅晶片脱胶工艺。
为解决上述技术问题，本发明采用的技术方案为：一种硅晶片脱胶工艺，车间温度25±3℃，湿度30～60％，采用如下脱胶机，该脱胶机包括一号槽、二号槽、三号槽、四号槽、五号槽和六号槽，一号槽和二号槽的水温是25～30℃，三号槽和四号槽的水温是30℃，五号槽里的是乳酸溶液且温度为65～70℃，乳酸与水的质量比是1∶1.5，六号槽的水温40～45℃，硅晶片先在一号槽和二号槽内分别喷淋550s，喷淋时，硅晶片两侧的喷头上下摆动，确保硅晶片上的胶体至硅晶片中部之间的部位都被喷到，然后将硅晶片放到三号槽和四号槽中分别超声处理90s，之后将硅晶片放入五号槽中浸泡450s～500s，最后将硅晶片放入六号槽浸泡50s后取出，其中所述胶体含有如下质量比的组分，改性丙烯酸脂树脂25～30％，甲基丙烯酸羟乙酯35～50％，过氧化氢异丙苯1～5％，邻磺酰苯甲酰亚胺0.1～0.4％，N,N-二甲基苯胺0.1～0.2％，硅微粉30～40％。
本发明的有益效果是：通过前续处理后，再经过乳酸的软化胶体就能保证所有硅晶片上的胶体一起脱落，从而避免在脱胶的过程中部分硅晶片氧化，从而提高硅晶片的合格率，降低生产成本。
具体实施方式
本发明所述的硅晶片脱胶工艺，车间温度25±3℃，湿度30～60％，采用如下脱胶机，该脱胶机包括一号槽、二号槽、三号槽、四号槽、五号槽和六号槽，一号槽和二号槽的水温是25～30℃，三号槽和四号槽的水温是30℃，五号槽里的是乳酸溶液且温度为65～70℃，乳酸与水的质量比是1∶1.5，乳酸溶液的温度和浓度直接影响胶体能否一起脱落的关键要素，一号槽至四号槽确保在软化胶体之前保证硅晶片干净，避免杂质影响硅晶片上胶体的软化。六号槽的水温40～45℃，硅晶片先在一号槽和二号槽内分别喷淋550s，喷淋时，硅晶片两侧的喷头上下摆动，确保硅晶片上的胶体至硅晶片中部之间的部位都被喷到，然后将硅晶片放到三号槽和四号槽中分别超声处理90s，之后将硅晶片放入五号槽中浸泡450s～500s，该时间保证了胶体的软化，同时又避免了时间过长带来的硅晶片表面氧化问题，最后将硅晶片放入六号槽浸泡50s后取出。其中所述胶体含有如下质量比的组分，改性丙烯酸脂树脂25～30％，甲基丙烯酸羟乙酯35～50％，过氧化氢异丙苯1～5％，邻磺酰苯甲酰亚胺0.1～0.4％，N,N-二甲基苯胺0.1～0.2％，硅微粉30～40％。利用乳酸软化上述胶体效果十分明显，能保证胶体一起脱落。

Claims (1)

1.硅晶片脱胶工艺，其特征在于：车间温度25±3℃，湿度30～60％，采用如下脱胶机，该脱胶机包括一号槽、二号槽、三号槽、四号槽、五号槽和六号槽，一号槽和二号槽的水温是25～30℃，三号槽和四号槽的水温是30℃，五号槽里的是乳酸溶液且温度为65～70℃，乳酸与水的质量比是1：1.5，六号槽的水温40～45℃，硅晶片先在一号槽和二号槽内分别喷淋550s，喷淋时，硅晶片两侧的喷头上下摆动，确保硅晶片上的胶体至硅晶片中部之间的部位都被喷到，然后将硅晶片放到三号槽和四号槽中分别超声处理90s，之后将硅晶片放入五号槽中浸泡450s～500s，最后将硅晶片放入六号槽浸泡50s后取出，其中所述胶体含有如下质量比的组分，改性丙烯酸脂树脂25～30％，甲基丙烯酸羟乙酯35～50％，过氧化氢异丙苯1～5％，邻磺酰苯甲酰亚胺0.1～0.4％，N，N-二甲基苯胺0.1～0.2％，硅微粉30～40％。
CN201610200158.2A 2016-03-31 2016-03-31 硅晶片脱胶工艺 Pending CN105855213A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111014161A (zh) * 2019-12-09 2020-04-17 东莞市日和自动化设备有限公司 一种料盘脱胶摆盘工艺

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DE10142073C1 (de) * 2001-08-29 2003-06-12 Infineon Technologies Ag Verfahren und Vorrichtung zum Verbinden und Trennen von Systemwafern und Trägerwafern
JP2011132050A (ja) * 2009-12-22 2011-07-07 Shinryo Corp 精製シリコン含有粉末回収方法
CN102275233A (zh) * 2011-09-06 2011-12-14 太仓协鑫光伏科技有限公司 一种切割170μm硅片的方法
CN102327882A (zh) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 单晶硅片的清洗工艺
CN102698989A (zh) * 2012-06-11 2012-10-03 协鑫阿特斯（苏州）光伏科技有限公司 硅片预清洗方法
CN102723403A (zh) * 2012-06-25 2012-10-10 江苏协鑫硅材料科技发展有限公司 籽晶脱胶工艺
CN103464418A (zh) * 2013-09-18 2013-12-25 天津市环欧半导体材料技术有限公司 一种半导体硅片脱胶工艺

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10142073C1 (de) * 2001-08-29 2003-06-12 Infineon Technologies Ag Verfahren und Vorrichtung zum Verbinden und Trennen von Systemwafern und Trägerwafern
JP2011132050A (ja) * 2009-12-22 2011-07-07 Shinryo Corp 精製シリコン含有粉末回収方法
CN102327882A (zh) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 单晶硅片的清洗工艺
CN102275233A (zh) * 2011-09-06 2011-12-14 太仓协鑫光伏科技有限公司 一种切割170μm硅片的方法
CN102698989A (zh) * 2012-06-11 2012-10-03 协鑫阿特斯（苏州）光伏科技有限公司 硅片预清洗方法
CN102723403A (zh) * 2012-06-25 2012-10-10 江苏协鑫硅材料科技发展有限公司 籽晶脱胶工艺
CN103464418A (zh) * 2013-09-18 2013-12-25 天津市环欧半导体材料技术有限公司 一种半导体硅片脱胶工艺

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111014161A (zh) * 2019-12-09 2020-04-17 东莞市日和自动化设备有限公司 一种料盘脱胶摆盘工艺

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Application publication date: 20160817