CN105845797A - Light-emitting diode (LED) epitaxial structure and fabrication method thereof - Google Patents
Light-emitting diode (LED) epitaxial structure and fabrication method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
The invention provides a light-emitting diode (LED) epitaxial structure. The LED epitaxial structure comprises a substrate and a semiconductor epitaxial layer, wherein the semiconductor epitaxial layer is arranged on the substrate and comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer, and an electron speed reduction layer is further arranged between the light-emitting layer and the N-type semiconductor layer, is used for reducing escaped electrons and is formed by laminating n layers of AlInGaN with thickness of 1-20 nanometers. The electron speed reduction layer is arranged between the light-emitting layer and an N-type semiconductor, is used for reducing the escaped electrons and is formed by laminating n layers of AlInGaN with the thickness of 1-20 nanometers, and thus, the electron speed can be effectively reduced.
Description
Technical field
The invention provides a kind of LED epitaxial structure and preparation method thereof.
Background technology
Light emitting diode (Light-Emitting Diode, LED) is a kind of semiconductor electronic that can be luminous
Element.This electronic component occurred as far back as 1962, can only send the ruddiness of low luminosity in early days, send out afterwards
Putting on display other monochromatic versions, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet
Line, luminosity also brings up to suitable luminosity.And purposes is also by the beginning as indicator lamp, display board etc.；With
The continuous progressive of technology, light emitting diode has been widely used in display, television set daylighting decoration
And illumination.
UV LED (UV Light Emitting Diode, UV-LED) be one can directly by
Electric energy is converted into the semiconductor devices of the solid-state of ultraviolet light.Along with the development of technology, ultra-violet light-emitting two pole
Pipe is in biologic medical, authentication, purification (water, air etc.) field, computer data storage and military affairs
Etc. aspect have wide market application foreground.In addition, ultraviolet LED is the most increasingly by illumination city
The concern of field.Because exciting three primary colors fluorescent powder by ultraviolet LED, the white light of general lighting can be obtained.
Presently commercially available white light LEDs is to excite the fluorescent material of gold-tinted to obtain by blue led mostly, Qi Zhonghong
Coloured light composition is more weak.
Near ultraviolet LED refers to emission wavelength and is positioned at the LED of 355 to 405nm wavelength band.At present
In the research of LED with to use in producing also be at most that the energy gap of most potential material GaN is
3.4eV, corresponding emission wavelength is 365nm.InGaN LED uses different In components to obtain
The black light of 365 to 405nm.But, under high electric current drives, InGaN LED luminous efficiency meeting
It is decreased obviously.This phenomenon causing light efficiency quickly to reduce due to chip current density increase is referred to as droop
Effect.Although the mechanism that droop produces has a variety of, nearest substantial amounts of experiment confirms Carrier Leakage
(Carrier leakage) is one of topmost reason.Especially in powerful device, solve carrier
Leakage just seems even more important.
Summary of the invention
The present invention is directed to the problem that prior art exists, its object is to provide one can reduce electron escape
LED epitaxial structure and preparation method thereof.
For achieving the above object, the invention provides a kind of LED epitaxial structure, described LED epitaxial structure bag
Include: substrate；It is positioned at the semiconductor epitaxial layers on described substrate, including n type semiconductor layer, luminescent layer and P
Type semiconductor layer；It is additionally provided with to reduce the electronics of electron escape between described luminescent layer and N-type semiconductor
Deceleration layer, described photoelectrons slow layer is formed by the AlInGaN layer stack that n-layer thickness is 1 to 20nm is folded.
As a further improvement on the present invention, wherein 2≤n≤10.
As a further improvement on the present invention, described photoelectrons slow layer ground floor is Alx1Iny1Ga1-x1-y1N, the
Two layers is Alx2Iny2Ga1-x2-y2N ..., n-th layer is AlxnInynGa1-xn-ynN, wherein,
0.4 >=x1 >=x2 >=... >=xn >=0,0≤y1≤y2≤...≤yn≤0.2.
As a further improvement on the present invention, the doping content of described n type semiconductor layer is 5E18 to 2E19
(cm-3)；The doping content of described p type semiconductor layer is 1E18 to 1E20 (cm-3), and carrier is dense
Degree is 5E16 to 2E17 (cm-3)。
As a further improvement on the present invention, described semiconductor epitaxial layers also includes the buffering being arranged on substrate
Layer, the uGaN layer being arranged between cushion and n type semiconductor layer, is arranged at luminescent layer and p-type is partly led
Electronic barrier layer between body layer.
As a further improvement on the present invention, the doping content of described electronic barrier layer is 1E18 to 1E20
(cm-3), carrier concentration is 5E16 to 2E17 (cm-3)。
For achieving the above object, the invention provides the preparation method of a kind of LED epitaxial structure: S1: will lining
The end, is placed on the load plate in MOCVD reative cell, high-temperature process 5-10 minute at 1080 to 1100 DEG C；
S2: at 1040 to 1070 DEG C, in the environment of 100 to 200Torr, at the N of Grown 2 to 4um
Type semiconductor layer, doping content is 5E18 to 2E19 (cm-3)；S3: 750 to 900 DEG C, 200 to
Under the conditions of 300Torr, on n type semiconductor layer make photoelectrons slow layer, i.e. growth n-layer thickness be 1 to
The AlInGaN layer of 20nm, wherein 2≤n≤10.Ground floor is Alx1Iny1Ga1-x1-y1N, the second layer is
Alx2Iny2Ga1-x2-y2N ..., n-th layer is AlxnInynGa1-xn-ynN.Wherein, 0.4 >=x1 >=x2 >=... >=xn >=0,
0≤y1≤y2≤...≤yn≤0.2；S4: 750 to 900 DEG C, under the conditions of 200 to 300Torr, at photoelectrons slow
Low temperature AI GaN quantum barrier layer and the low temperature InGaN quantum well layer of 2 to 4nm of 6 to 12nm is grown on layer,
Wherein, the Al component in low temperature AI GaN quantum barrier layer is 0.05 to 0.25,6 to 10 week of repeated growth
Phase, the In component in regulation low temperature InGaN quantum well layer, forming emission wavelength is the low of 365 to 405nm
Temperature InGaN/AlGaN ultra-violet light-emitting layer；S5: at 800 to 1000 DEG C, 100 to 400Torr, at luminescent layer
The p-type semiconductor layer of upper growth 30 to 50nm.
As a further improvement on the present invention, described preparation method also includes: at 500-550 DEG C,
200-500Torr, in the GaN layer of Grown 10-30nm or AlGaN layer as cushion；With/
Or at 1040-1100 DEG C, 100-300Torr, grow the uGaN layer of 2-4um on the buffer layer；And/or
800-1000 DEG C, 100-400Torr, luminescent layer grows the electronic barrier layer of 30-60nm.
As a further improvement on the present invention, in above-mentioned S3 step, n is 3, then ground floor is 5nm's
Al0.3In0.01Ga0.69N, the second layer is the Al of 5nm0.2In0.05Ga0.75N, third layer is 5nm's
Al0.1In0.1Ga0.8N。
As a further improvement on the present invention, in above-mentioned S3 step, n is 4, then ground floor is thickness 3nm
Al0.3In0.01Ga0.69N, the second layer is the Al of thickness 5nm0.2In0.05Ga0.75N, third layer be thickness be 7nm
Al0.1In0.1Ga0.8N, the 4th layer is the Al of thickness 9nm0.05In0.12Ga0.83N。
Beneficial effects of the present invention: be additionally provided with to reduce electronics between luminescent layer and N-type semiconductor and escape
The photoelectrons slow layer of ease, and described photoelectrons slow layer is the AlInGaN of 1 to 20nm by n-layer thickness
Layer stack is folded to be formed, and can effectively reduce the speed of electronics.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments described in the present invention, for those of ordinary skill in the art
From the point of view of, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
If Fig. 1 is the structural representation of LED chip in one embodiment of the invention.
Detailed description of the invention
For the technical scheme making those skilled in the art be more fully understood that in the present invention, below in conjunction with
Accompanying drawing in the embodiment of the present invention, clearly and completely retouches the technical scheme in the embodiment of the present invention
State, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole enforcement
Example.Based on the embodiment in the present invention, those of ordinary skill in the art are not before making creative work
Put the every other embodiment obtained, all should belong to the scope of protection of the invention.
For the ease of describing, space relative terms here can be used, as " ... on ", " ... on
Side ", " at ... upper surface ", " above " etc., be used for describing as a device shown in the figure or feature with
Other devices or the spatial relation of feature.It should be appreciated that space relative terms be intended to comprise except
Different azimuth in use or operation outside the orientation that device is described in the drawings.Such as, if accompanying drawing
In device be squeezed, then be described as " other devices or structure above " or " other devices or structure on "
Device after will be positioned as " other devices or structure below " or " other devices or structure under ".Cause
And, exemplary term " in ... top " can include " in ... top " and " in ... lower section " two kinds of orientation.Should
Device can also other different modes location (90-degree rotation or be in other orientation), and to being made here
Space relatively describe and make respective explanations.
Additionally, the label or sign repeated may be used in various embodiments.These repeat only for
Simply clearly describe the present invention, do not represent have between different embodiments and/or the structure discussed any
Relevance.
Show the sectional structure schematic diagram of heretofore described LED epitaxial structure according to Fig. 1, from lower and
Upper for epitaxial growth direction, along epitaxial growth direction, described LED epitaxial structure includes: substrate, set
The semiconductor epitaxial layers being placed on substrate, described semiconductor epitaxial layers include n type semiconductor layer, described half
Conductor epitaxial layer includes n type semiconductor layer, photoelectrons slow layer, luminescent layer and p type semiconductor layer.
In the present embodiment, the material of described substrate is sapphire, certainly, according to other materials, as Si,
SiC, GaN, ZnO etc. also can meet the condition of the present invention.
Described n type semiconductor layer can be N-shaped GaN etc., the doping content of described n type semiconductor layer
For 5E18 to 2E19cm-3。
Described photoelectrons slow layer includes that the AlInGaN layer stack that n-layer thickness is 1～20nm is folded and forms, wherein
2≤n≤10.Different energy rank are formed so that electronics is the coldest by the AlInGaN of design various combination
But get off.In the present embodiment, described photoelectrons slow layer ground floor is Alx1Iny1Ga1-x1-y1N, second
Layer is Alx2Iny2Ga1-x2-y2N ..., n-th layer is AlxnInynGa1-xn-ynN, wherein,
0.4 >=x1 >=x2 >=... >=xn >=0,0≤y1≤y2≤...≤yn≤0.2.
Described luminescent layer is SQW by InGaN and AlGaN is that quantum is built stacking and formed, its luminous ripple
A length of 365～405nm.
Described p type semiconductor layer can be p-type GaN etc., the doping content of described p type semiconductor layer
For 1E18～1E20cm-3, carrier concentration is 5E16～2E17cm-3。
Certainly, in the present embodiment, described semiconductor epitaxial layers also includes the buffering being arranged on substrate
Layer, the uGaN layer being arranged on cushion, the electronic barrier layer being arranged on luminescent layer.
The material of described electronic barrier layer can be AlGaN, AlInGaN, and doping content is
1E18～1E20cm-3, carrier concentration is 5E16～2E17cm-3。
Concrete, the preparation method of a kind of LED epitaxial structure of the present invention comprises the following steps:
Step1: Sapphire Substrate be positioned on the load plate in MOCVD reative cell, at 1080 DEG C～1100 DEG C
Lower high-temperature process 5-10 minute, wherein Sapphire Substrate can be plain film or patterned substrate.
Step2: at 500～550 DEG C, under conditions of 200～500Torr, at Grown 10～30nm
GaN layer or AlInGaN layer are as cushion, 1Torr=133.3Pa.
Step3: at 1040～1100 DEG C, under conditions of 100～300Torr, grows 2～4um on the buffer layer
UGaN layer.
Step4: at 1040～1070 DEG C, under conditions of 100～200Torr, grows 2～4um on uGaN
N type semiconductor layer.
Step5: at 750～900 DEG C, under conditions of 200～300Torr, grows n on n type semiconductor layer
Layer thickness be the AlInGaN layer of 1～20nm as photoelectrons slow layer, wherein 2≤n≤10., described
AlInGaN layer ground floor is Alx1Iny1Ga1-x1-y1N, the second layer is Alx2Iny2Ga1-x2-y2N ...,
N-th layer is AlxnInynGa1-xn-ynN, wherein, 0.4 >=x1 >=x2 >=... >=xn >=0,0≤y1≤y2≤...≤yn≤0.2.
Step6: at 750～900 DEG C, under conditions of 200～300Torr, grows 6～12nm on photoelectrons slow layer
Low temperature AI GaN quantum barrier layer and the low temperature InGaN quantum well layer of 2～4nm, wherein, low temperature AI GaN
The component of the Al in quantum barrier layer is 0.05～0.25, repeated growth 6～10 cycles, and regulates low temperature
In component in InGaN quantum well layer, forms the low temperature InGaN/AlGaN that emission wavelength is 365～405nm
Ultra-violet light-emitting layer.
Step7: at 800～1000 DEG C, under conditions of 100～400Torr, grows 30～60nm on luminescent layer
Electronic barrier layer.
Step8: at 800～1000 DEG C, under conditions of 100～400Torr, grows on electronic barrier layer
The p type semiconductor layer of 30～50nm.
Preferably, the invention provides following 2 kinds of preferred embodiments:
The first preferred embodiment, described photoelectrons slow layer, is to include the AlInGaN that 3 layer thicknesses are 5nm
Layer stack is folded to be formed.Ground floor is Al0.3In0.01Ga0.69N, the second layer is Al0.2In0.05Ga0.75N, for the third time
For Al0.1In0.1Ga0.8N。
Corresponding preparation method is:
Step1: be placed on by graphical sapphire substrate on the load plate in MOCVD reative cell, at 1100 DEG C
Lower high-temperature process 5 minutes.
Step2: at 530 DEG C, under conditions of 400Torr, the GaN layer of growth 20nm is as cushion.
Step3: at 1080 DEG C, under conditions of 200Torr, the uGaN layer of growth 3um.
Step4: at 1060 DEG C, under conditions of 150Torr, the n-type GaN layer of growth 3um, doping content
For 1E19cm-3。
Step5: at 850 DEG C, under conditions of 250Torr, growth thickness is 5nm's successively
Al0.3In0.01Ga0.69N, Al0.2In0.05Ga0.75N, Al0.1In0.1Ga0.8N。
Step6: 750～900 DEG C, under conditions of 250Torr, the low temperature AI GaN quantum of growth 10nm is built
Layer and the low temperature InGaN quantum well layer of 3nm, wherein, the Al component in low temperature AI GaN quantum barrier layer
It is 0.15,9 cycles of repeated growth, the In component in regulation low temperature InGaN quantum well layer, formed
Emission wavelength is the low temperature InGaN/AlGaN ultra-violet light-emitting layer of 390nm.
Step7: at 850 DEG C, under conditions of 300Torr, the electronic barrier layer of growth 40nm.
Step8: at 950 DEG C, under conditions of 400Torr, the p-type GaN layer of growth 50nm.
The second preferred embodiment, described photoelectrons slow layer, is to include the AlInGaN that 4 layer thicknesses are different
Layer stack is folded to be formed.Ground floor is the Al of thickness 3nm0.3In0.01Ga0.69N, the second layer is thickness 5nm's
Al0.2In0.05Ga0.75N, third layer be thickness be the Al of 7nm0.1In0.1Ga0.8N, the 4th layer is thickness 9nm's
Al0.05In0.12Ga0.83N。
Corresponding preparation method is:
Step1: be placed on by graphical sapphire substrate on the support plate in MOCVD reative cell, at 1100 DEG C
Lower high-temperature process 5 minutes.
Step2: at 530 DEG C, under conditions of 400Torr, the GaN layer of growth 20nm is as cushion.
Step3: at 1080 DEG C, under conditions of 200Torr, the uGaN layer of growth 3um.
Step4: at 1060 DEG C, under conditions of 150Torr, the n-type GaN layer of growth 3um, doping content
For 1E19cm-3。
Step5: at 850 DEG C, under conditions of 250Torr, grow the Al of 3nm successively0.3In0.01Ga0.69N, 5nm
Al0.2In0.05Ga0.75The Al of N, 7nm0.1In0.1Ga0.8The Al of N, 9nm0.05In0.12Ga0.83N。
Step6: 750～900 DEG C, under conditions of 250Torr, the low temperature AI GaN quantum of growth 10nm is built
Layer and the low temperature InGaN quantum well layer of 3nm, wherein, the Al component in low temperature AI GaN quantum barrier layer
It is 0.15,9 cycles of repeated growth, the In component in regulation low temperature InGaN quantum well layer, formed
Emission wavelength is the low temperature InGaN/AlGaN ultra-violet light-emitting layer of 390nm.
Step7: at 850 DEG C, under conditions of 300Torr, the electronic barrier layer of growth 40nm.
Step8: at 950 DEG C, under conditions of 400Torr, the p-type GaN layer of growth 50nm.
Therefore, the described LED epitaxial structure of the present invention is by between luminescent layer and n type semiconductor layer
Insert one layer of photoelectrons slow layer, the luminous efficiency of uv-LED device can be promoted.Further, described electronics subtracts
Speed layer is made up of the AlInGaN layer that n-layer thickness is 1～20nm, thus, inject from n type semiconductor layer
High energy electron can be slowed down step by step after the AlInGaN layer on rank by different, general with reduce that carrier reveals
Rate, thus slow down droop effect.Although using the near ultraviolet photophore of this structure at high current density
Driving under, it is possible to obtain higher electricity conversion.
It is obvious to a person skilled in the art that the invention is not restricted to the thin of above-mentioned one exemplary embodiment
Joint, and without departing from the spirit or essential characteristics of the present invention, it is possible to other concrete shape
Formula realizes the present invention.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary,
And be nonrestrictive, the scope of the present invention is limited by claims rather than described above, because of
This is intended to include in the present invention all changes fallen in the implication of equivalency and scope of claim
In.Should not be considered as limiting involved claim by any reference in claim.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, but the most each reality
Mode of executing only comprises an independent technical scheme, and this narrating mode of specification is only for understand
Seeing, those skilled in the art should be using specification as an entirety, and the technical scheme in each embodiment is also
Other embodiments that it will be appreciated by those skilled in the art that can be formed through appropriately combined.
Claims (10)
1. a LED epitaxial structure, it is characterised in that: described LED epitaxial structure includes:
Substrate；
It is positioned at the semiconductor epitaxial layers on described substrate, including n type semiconductor layer, luminescent layer and p type semiconductor layer；
It is additionally provided with to reduce the photoelectrons slow layer of electron escape between described luminescent layer and N-type semiconductor, described
Photoelectrons slow layer is formed by the AlInGaN layer stack that n-layer thickness is 1 to 20nm is folded.
LED epitaxial structure the most according to claim 1, it is characterised in that: wherein 2≤n≤10.
LED epitaxial structure the most according to claim 1, it is characterised in that: described photoelectrons slow layer ground floor
For Alx1Iny1Ga1-x1-y1N, the second layer is Alx2Iny2Ga1-x2-y2N ..., n-th layer is AlxnInynGa1-xn-ynN,
Wherein, 0.4 >=x1 >=x2 >=... >=xn >=0,0≤y1≤y2≤...≤yn≤0.2.
LED epitaxial structure the most according to claim 1, it is characterised in that: mixing of described n type semiconductor layer
Miscellaneous concentration is 5E18 to 2E19 (cm-3)；The doping content of described p type semiconductor layer is 1E18 to 1E20
(cm-3), and carrier concentration is 5E16 to 2E17 (cm-3)。
LED epitaxial structure the most according to claim 1, it is characterised in that: described semiconductor epitaxial layers also wraps
Include the cushion being arranged on substrate, the uGaN layer being arranged between cushion and n type semiconductor layer, if
It is placed in the electronic barrier layer between luminescent layer and p-type semiconductor layer.
LED epitaxial structure the most according to claim 1, it is characterised in that: the doping of described electronic barrier layer
Concentration is 1E18 to 1E20 (cm-3), carrier concentration is 5E16 to 2E17 (cm-3)。
7. the preparation method of a LED epitaxial structure:
S1: substrate is placed on the load plate in MOCVD reative cell, high-temperature process at 1080 to 1100 DEG C
5-10 minute；
S2: at 1040 to 1070 DEG C, in the environment of 100 to 200Torr, at the N of Grown 2 to 4um
Type semiconductor layer, doping content is 5E18 to 2E19 (cm-3)；
S3: 750 to 900 DEG C, under the conditions of 200 to 300Torr, n type semiconductor layer makes photoelectrons slow
Layer, i.e. growth n-layer thickness are the AlInGaN layer of 1 to 20nm, wherein 2≤n≤10.Ground floor is
Alx1Iny1Ga1-x1-y1N, the second layer is Alx2Iny2Ga1-x2-y2N ..., n-th layer is AlxnInynGa1-xn-ynN。
Wherein, 0.4 >=x1 >=x2 >=... >=xn >=0,0≤y1≤y2≤...≤yn≤0.2；
S4: 750 to 900 DEG C, under the conditions of 200 to 300Torr, photoelectrons slow layer grows 6 to 12nm
Low temperature AI GaN quantum barrier layer and the low temperature InGaN quantum well layer of 2 to 4nm, wherein, low temperature AI GaN
Al component in quantum barrier layer is 0.05 to 0.25,6 to 10 cycles of repeated growth, regulates low temperature InGaN
In component in quantum well layer, forms the low temperature InGaN/AlGaN that emission wavelength is 365 to 405nm purple
Outer luminescent layer；
S5: at 800 to 1000 DEG C, 100 to 400Torr, the p-type growing 30 to 50nm on luminescent layer is partly led
Body layer.
The preparation method of a kind of LED epitaxial structure the most according to claim 7, it is characterised in that:
Described preparation method also includes:
At 500-550 DEG C, 200-500Torr, GaN layer or AlGaN layer at Grown 10-30nm are made
For cushion；
And/or at 1040-1100 DEG C, 100-300Torr, grow the uGaN layer of 2-4um on the buffer layer；
And/or at 800-1000 DEG C, 100-400Torr, luminescent layer grows the electronic barrier layer of 30-60nm.
The preparation method of LED epitaxial structure the most according to claim 7, it is characterised in that: above-mentioned S3 walks
In Zhou, n is 3, then ground floor is the Al of 5nm0.3In0.01Ga0.69N, the second layer is 5nm's
Al0.2In0.05Ga0.75N, third layer is the Al of 5nm0.1In0.1Ga0.8N。
The preparation method of LED epitaxial structure the most according to claim 7, it is characterised in that: above-mentioned S3
In step, n is 4, then ground floor is the Al of thickness 3nm0.3In0.01Ga0.69N, the second layer is thickness 5nm
Al0.2In0.05Ga0.75N, third layer be thickness be the Al of 7nm0.1In0.1Ga0.8N, the 4th layer is thickness 9nm
Al0.05In0.12Ga0.83N。
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| CN109659409A (en) * | 2018-12-05 | 2019-04-19 | 湖北深紫科技有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN109768130A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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| CN108447952A (en) * | 2018-03-26 | 2018-08-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108447952B (en) * | 2018-03-26 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109346583A (en) * | 2018-08-31 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109860357A (en) * | 2018-10-30 | 2019-06-07 | 华灿光电(苏州）有限公司 | A kind of gallium nitride based LED epitaxial slice and its growing method |
| CN109860357B (en) * | 2018-10-30 | 2021-08-03 | 华灿光电(苏州）有限公司 | Gallium nitride-based light emitting diode epitaxial wafer and growth method thereof |
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| CN109360879A (en) * | 2018-11-27 | 2019-02-19 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109659409B (en) * | 2018-12-05 | 2020-06-30 | 湖北深紫科技有限公司 | LED epitaxial structure and preparation method thereof |
| CN109659409A (en) * | 2018-12-05 | 2019-04-19 | 湖北深紫科技有限公司 | A kind of LED epitaxial structure and preparation method thereof |
| CN109768130A (en) * | 2018-12-28 | 2019-05-17 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109860344A (en) * | 2019-01-18 | 2019-06-07 | 湘能华磊光电股份有限公司 | A kind of LED extension quantum-well growing method |
| CN110112270A (en) * | 2019-05-10 | 2019-08-09 | 马鞍山杰生半导体有限公司 | Deep ultraviolet LED epitaxial wafer and preparation method thereof and deep ultraviolet LED |
| CN111244237A (en) * | 2020-01-15 | 2020-06-05 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN111244237B (en) * | 2020-01-15 | 2021-04-30 | 圆融光电科技股份有限公司 | Ultraviolet LED epitaxial structure and growth method thereof |
| CN112993097A (en) * | 2021-01-21 | 2021-06-18 | 华灿光电(苏州）有限公司 | Preparation method of light emitting diode epitaxial wafer |
| CN112993102A (en) * | 2021-05-11 | 2021-06-18 | 东南大学 | Ultraviolet light-emitting diode with electronic speed reduction layer structure |
| CN113394319A (en) * | 2021-06-15 | 2021-09-14 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet light-emitting element and preparation method thereof |
| CN114284409A (en) * | 2022-03-08 | 2022-04-05 | 江西兆驰半导体有限公司 | Light emitting diode and preparation method thereof |
| CN114284409B (en) * | 2022-03-08 | 2022-05-24 | 江西兆驰半导体有限公司 | Light emitting diode and preparation method thereof |
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