CN105845779A - Lift-type silicon chip gas passivation treatment device - Google Patents
Lift-type silicon chip gas passivation treatment device Download PDFInfo
- Publication number
- CN105845779A CN105845779A CN201610340076.8A CN201610340076A CN105845779A CN 105845779 A CN105845779 A CN 105845779A CN 201610340076 A CN201610340076 A CN 201610340076A CN 105845779 A CN105845779 A CN 105845779A
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- Prior art keywords
- silicon chip
- gas
- cylinder
- plate
- lift
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000872 buffer Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 12
- 230000000740 bleeding effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000013386 optimize process Methods 0.000 abstract 1
- 238000004381 surface treatment Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 53
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a lift-type silicon chip gas passivation treatment device, which comprises a support, a cylinder, a gas spray assembly and air-extracting devices. The support is bridged across a silicon chip etcher; an upper cross beam of the support is fixedly provided with a cylinder fixation plate; the cylinder is fixedly arranged to the cylinder fixation plate; a piston rod of the cylinder and a gas spray assembly fixation plate are fixed; one end of each lift rod is fixedly connected with the gas spray assembly fixation plate, and the other end thereof is fixed connected with a lift plate; the lift plate is arranged above the cylinder fixation plate and is provided with a plurality of buffers thereon; a seal space is formed between the gas spray assembly and the upper cross beam, and is formed by a frame and transparent plates fixedly installed thereto; the air-extracting devices are arranged under the gas spray assembly; and silicon chip transfer rollers are arranged therebetween. According to the lift-type silicon chip gas passivation treatment device, the distance between the gas spray assembly and a silicon chip can be adjusted conveniently through lifting of the cylinder to optimize process conditions for surface treatment of the silicon chip; and through the support design, the lift-type silicon chip gas passivation treatment device is also easy to operate and adjust when a silicon chip treatment process production line is reformed and adjusted.
Description
Technical field
The present invention relates to photovoltaic solar cell manufacturing technology field, particularly to photovoltaic cell silicon
A kind of Liftable type gas Passivation Treatment equipment in sheet surface passivating treatment technique.
Background technology
The environmental problem caused along with the large-scale use of traditional fossil fuel is increasingly serious, clearly
The photovoltaic generation that the clean energy such as utilizes solar energy to carry out generating electricity increasingly is paid attention to by various countries, closely
In the past few years obtain quick development, but at developing country as Chinese, photovoltaic generation
Total amount the least compared with traditional thermal power generation total amount.Firepower traditional compared with is sent out
Electricity, the major reason affecting photovoltaic generation universal rapidly is exactly that cost of electricity-generating is the highest,
And the important channel reducing photovoltaic generation cost is exactly the efficiency improving photovoltaic generation.
At present using most at photovoltaic art is silicon substrate solar cell, silicon substrate solar cell
The number of the sunshine that generating efficiency is with silicon substrate can absorb directly related.
Owing to silicon is indirect band-gap semiconductor, it is general all more than 30% to the reflectivity of sunshine, because of
How this, reduce the reflectivity of the sunshine of silicon chip surface, allows silicon chip surface suction as much as possible
Receive sunshine and just become to improve the key factor of silicon substrate solar cell generating efficiency.Current work
In skill, the technique being most frequently with is to utilize strong acid to corrode silicon face thus in silicon face shape
Becoming " worm " structure to reduce the reflectivity of silicon chip surface, this process costs is relatively low but effect
Not being especially good, additionally strong acid also brings along the problem in safety in production；Recent years, reaction
Ion etching (RIE etching), plasma etch process have obtained increasing use, this
The silicon wafer suede structure planting lithographic method formation is lower to the reflectivity of light.In order to improve sun electricity
The conversion efficiency in pond, needs effectively to be passivated the silicon chip after surface wool manufacturing, by oxidation
Method forms silica membrane at silicon face, and using relatively more technique at present is to use ozone gas
Body carries out silicon chip passivation, i.e. use gas shower equipment that reacting gas is sprayed onto silicon chip surface pair
Surface processes.Current gas shower equipment, at the silicon chip according to concrete application scenario
It is fixing after the concrete specification installation and debugging of the cell piece etching machine of reason processing line, works as cell piece
Etching machine situation changes, or runs into other situations and need to adjust gas shower equipment
Time whole the most very inconvenient, accordingly, it is desirable to provide one can facilitate, gas shower equipment is entered
The silicon chip surface passivation device of Row sum-equal matrix.
Summary of the invention
For the use demand in existing technique, meet silicon chip passivation in solar cell manufacture process
Technological requirement, it is an object of the invention to provide in photovoltaic cell silicon wafer surface passivating treatment technique
A kind of Liftable type silicon chip gas passivation device, its can according to different product line situations and
Technological requirement adjusts the distance between passivation device and silicon chip easily.
To achieve the object of the present invention, the present invention proposes at a kind of Liftable type silicon chip gas passivation
Reason device, described processing means includes support, cylinder, gas shower assembly and extractor fan,
Described support is arranged across solar battery sheet etching machine, the entablature of described support is fixed setting
Being equipped with air cylinder fixed plate, cylinder is fixed in air cylinder fixed plate, and the piston rod of cylinder sprays with gas
Drenching assembly fixed plate to fix, gas shower assembly is fixed with gas shower assembly by fixed support
Plate connects, and one end of lifting guide pillar is fixed with gas shower assembly fixed plate, the other end and lifting
Plate is fixed, and lifter plate is arranged at the top of air cylinder fixed plate, is provided with multiple buffer,
Gas shower assembly between entablature for sealing space, by framework and install fixing with it
Transparent panel is constituted, and extractor fan is arranged at the lower section of gas shower assembly, and silicon chip delivery roller sets
In between the two.
Preferably, described gas shower assembly includes housing and air admission hole, is provided with gas in housing
Body even flow plate, reacting gas is blown to the silicon of lower section from air admission hole after gas even flow plate equably
Sheet surface.
Further preferably, described extractor fan is set to box body columnar structure, the thereon both sides of cover plate
Position is provided with seam of bleeding, and is provided with multiple aperture of bleeding on left side plate, and front side or rear side set
Having venthole, it is connected with exhaust equipment by pipeline.
The Liftable type silicon chip gas passivation device of the present invention, by gas shower assembly with
Frame is fixed rather than is directly anchored on cell piece etching machine, and by gas shower assembly by solid
The piston rod of the cylinder determining plate and be arranged on support is connected fixing, comes side by the lifting of cylinder
Just the height of regulation gas shower assembly distance silicon chip, thus optimize the technique that silicon chip surface processes
Condition；When the transformation of cell piece etching machine and adjustment, the most flexible.
Accompanying drawing explanation
By detailed description below in conjunction with the accompanying drawings, the present invention is aforesaid and other purpose, spy
Advantage of seeking peace will become clear from.Wherein:
Fig. 1 show the Liftable type silicon chip gas passivation device of one embodiment of the invention
Structural representation；
Fig. 2 show the Liftable type silicon chip gas passivation device of one embodiment of the invention
The structural representation of gas shower assembly；
Fig. 3 show the Liftable type silicon chip gas passivation device of one embodiment of the invention
The structural representation of extractor fan；
The structural representation of the buffer that Fig. 4 show in Fig. 1.
Detailed description of the invention
Liftable type silicon chip gas Passivation Treatment with reference to the one embodiment of the invention shown in Fig. 1
The structural representation of device, described processing means includes support 10, cylinder 14, gas shower group
Part 20 (seeing Fig. 2) and extractor fan 30 (seeing Fig. 3), described support 10 is across solar energy
Cell piece etching machine is arranged, and the entablature 102 of described support 10 is fixedly installed air cylinder fixed plate
12, cylinder 14 is fixed in air cylinder fixed plate 12, piston rod 140 and the gas shower group of cylinder 14
Part fixed plate 22 is fixed, and gas shower assembly 20 is solid with gas shower assembly by fixed support 24
Determining plate 22 to connect, one end of two lifting guide pillars 144 is fixed with gas shower assembly fixed plate 22,
The other end is fixed, so, it is ensured that gas shower assembly 20 is in lift adjustment with lifter plate 142
During holding level be unlikely to tilt；Lifter plate 142 is arranged at the upper of air cylinder fixed plate 12
Side, is provided with multiple buffer 146, for sealing between gas shower assembly 20 to entablature
Space, by framework 16 and install fixing transparent panel with it and constitute, prevents from locating process gases leakage,
Extractor fan 30 is arranged at the lower section of gas shower assembly 20, and silicon chip delivery roller 40 is located at both
Between.
The Liftable type silicon chip gas passivation device of the present invention, by gas shower assembly with
Frame is fixed rather than is directly anchored on cell piece etching machine, and by gas shower assembly by solid
The piston rod of the cylinder determining plate and be arranged on support is connected fixing, comes side by the lifting of cylinder
Just the height of regulation gas shower assembly distance silicon chip, thus optimize the technique that silicon chip surface processes
Condition；When the transformation of cell piece etching machine and adjustment, the most flexible.
In above-described embodiment, the structural representation of described gas shower assembly 20 participates in Fig. 2, its bag
Include housing 20 and air admission hole 201, in housing 20, be provided with gas even flow plate (not shown), reaction
Gas is blown to the silicon chip surface of lower section from air admission hole 201 after gas even flow plate equably；Surface
Gas after process be arranged at extractor fan 30 below take away avoid reveal, extractor fan
The structural representation of 30 sees Fig. 3, and it is set to box body columnar structure, in the both sides of upper cover plate 30
Position is provided with seam 31 of bleeding, and is provided with multiple aperture 33, front side or rear side of bleeding on left side plate
Being provided with venthole 35, it is connected with exhaust equipment, by reacted gas from battery by pipeline
Sheet etching machine is taken away.
Lifter plate 12 arranges lifting guide pillar 144 and gas can be greatly improved with multiple buffers 146
The body spray assemblies stationarity when moving up and down with cylinder, keeps the level of gas shower assembly
Degree.Described buffer 146 can be commercially available air buffer, and its structural representation sees figure
4, its main body 1460 constructs for hollow cylindrical, with external screw thread 1461, which is provided with two and fixes
Nut 1462 and 1463, bottom is shrinking connecting-rod 1465 and abutting portion 1467.
Extractor fan 30 in the embodiment of Fig. 1 is provided with two, and in actual applications, it is permissible
Passage and the size of gas shower assembly according to the silicon chip processed come corresponding design, the application
This is not restricted.
The Liftable type silicon chip gas passivation device of the present invention, comes non-by the lifting of cylinder
Often it is conveniently adjusted the height of gas shower assembly distance silicon chip to optimize the work that silicon chip surface processes
Skill condition；Employing stent-type designs, and when the transformation of cell piece etching machine and adjustment, is also easy to behaviour
Make and adjust.
The invention is not limited in described embodiment, those skilled in the art is without departing from this
In the range of the spirit of invention is i.e. open, still can make some and revise or change, therefore the right of the present invention
Protection domain limits in the range of standard with claims.
Claims (3)
1. a Liftable type silicon chip gas passivation device, it is characterised in that described process
Device includes support, cylinder, gas shower assembly and extractor fan, and described support is across too
Sun can be arranged by cell piece etching machine, and the entablature of described support is fixedly installed air cylinder fixed plate,
Cylinder is fixed in air cylinder fixed plate, and the piston rod of cylinder is fixed with gas shower assembly fixed plate,
One end of lifting guide pillar is fixed with gas shower assembly fixed plate, and the other end is fixed with lifter plate,
Lifter plate is arranged at the top of air cylinder fixed plate, is provided with multiple buffer, gas shower
Assembly between entablature for sealing space, by framework and install fixing transparent panel structure with it
Become, extractor fan is arranged at the lower section of gas shower assembly, silicon chip delivery roller be located at both it
Between.
2. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1, its
Being characterised by, described gas shower assembly includes housing and air admission hole, is provided with gas in housing
Even flow plate, reacting gas is blown to the silicon chip of lower section from air admission hole after gas even flow plate equably
Surface.
3. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1 or 2,
It is characterized in that, described extractor fan is set to box body columnar structure, the thereon both sides of cover plate
Position is provided with seam of bleeding, and is provided with multiple aperture of bleeding on left side plate, and front side or rear side are provided with
Venthole, it is connected with exhaust equipment by pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340076.8A CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340076.8A CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845779A true CN105845779A (en) | 2016-08-10 |
| CN105845779B CN105845779B (en) | 2017-08-25 |
Family
ID=56593068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610340076.8A Active CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105845779B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615794A (en) * | 2018-06-28 | 2018-10-02 | 东方日升（洛阳）新能源有限公司 | A kind of operating method of electrical pumping machine for solar silicon wafers |
| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120152172A1 (en) * | 2009-09-02 | 2012-06-21 | Wonik Ips Co., Ltd. | Gas-discharging device and substrate-processing apparatus using same |
| CN205159348U (en) * | 2015-12-04 | 2016-04-13 | 常州时创能源科技有限公司 | Crystal silicon solar cell's defect passivation treating device |
| CN205282456U (en) * | 2015-12-10 | 2016-06-01 | 杭州力云科技有限公司 | Solar energy silicon chip diffusion equipment |
| CN205621759U (en) * | 2016-05-20 | 2016-10-05 | 苏州中世太新能源科技有限公司 | Liftable gaseous passivation treating device of formula silicon chip |
-
2016
- 2016-05-20 CN CN201610340076.8A patent/CN105845779B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120152172A1 (en) * | 2009-09-02 | 2012-06-21 | Wonik Ips Co., Ltd. | Gas-discharging device and substrate-processing apparatus using same |
| CN205159348U (en) * | 2015-12-04 | 2016-04-13 | 常州时创能源科技有限公司 | Crystal silicon solar cell's defect passivation treating device |
| CN205282456U (en) * | 2015-12-10 | 2016-06-01 | 杭州力云科技有限公司 | Solar energy silicon chip diffusion equipment |
| CN205621759U (en) * | 2016-05-20 | 2016-10-05 | 苏州中世太新能源科技有限公司 | Liftable gaseous passivation treating device of formula silicon chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615794A (en) * | 2018-06-28 | 2018-10-02 | 东方日升（洛阳）新能源有限公司 | A kind of operating method of electrical pumping machine for solar silicon wafers |
| CN108615794B (en) * | 2018-06-28 | 2024-04-16 | 东方日升(安徽)新能源有限公司 | Operation method of electric implanter for solar silicon wafer |
| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105845779B (en) | 2017-08-25 |
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