CN205621759U - Liftable gaseous passivation treating device of formula silicon chip - Google Patents
Liftable gaseous passivation treating device of formula silicon chip Download PDFInfo
- Publication number
- CN205621759U CN205621759U CN201620467629.1U CN201620467629U CN205621759U CN 205621759 U CN205621759 U CN 205621759U CN 201620467629 U CN201620467629 U CN 201620467629U CN 205621759 U CN205621759 U CN 205621759U
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- fixed
- gas
- cylinder
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 54
- 239000010703 silicon Substances 0.000 title claims abstract description 54
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000000872 buffer Substances 0.000 claims abstract description 8
- 230000000740 bleeding effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 abstract description 9
- 238000009434 installation Methods 0.000 abstract description 2
- 238000004381 surface treatment Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 53
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The utility model provides a liftable gaseous passivation treating device of formula silicon chip, it includes the support, the cylinder, gaseous spray assembly and updraft ventilator, the support spanes solar wafer sculpture machine setting, the fixed cylinder fixed plate that is provided with on the entablature of support, the cylinder is fixed on the cylinder fixed plate, the piston rod of cylinder is fixed with gaseous spray assembly fixed plate, the one end of lifting guide pillar is fixed with gaseous spray assembly fixed plate, the other end is fixed with the lifter plate, the lifter plate sets up in the top of cylinder fixed plate, be provided with a plurality of buffers on it, gaseous spray assembly is to being confined space between the entablature, constitute through the frame and rather than the fixed transparent plate of installation, updraft ventilator sets up in gaseous spray assembly's below, the silicon chip delivery roller is located between the two. The utility model discloses a liftable gaseous passivation treating device of formula silicon chip, the process consideration of highly optimizing silicon chip surface treatment of gaseous spray assembly apart from the silicon chip is adjusted in lift through the cylinder very conveniently, adopt a posture design, when the silicon wafer etching machine is transformed with the adjustment, also easily operation and adjustment.
Description
Technical field
The utility model relates to photovoltaic solar cell manufacturing technology field, particularly to photovoltaic electric
A kind of Liftable type gas Passivation Treatment equipment in the silicon chip surface passivation process of pond.
Background technology
The environmental problem causing with the large-scale use of traditional fossil fuel is increasingly serious, clearly
The photovoltaic generation that the clean energy such as utilizes solar energy to generate electricity increasingly is paid attention to by various countries, closely
In the past few years obtain quick development, but at developing country as Chinese, photovoltaic generation
Total amount still very little compared with traditional thermal power generation total amount.Firepower traditional compared with is sent out
Electricity, affecting a universal rapidly major reason of photovoltaic generation is exactly that cost of electricity-generating is still higher,
And the important channel reducing photovoltaic generation cost is exactly the efficiency improving photovoltaic generation.
At present using most at photovoltaic art is silicon substrate solar cell, silicon substrate solar cell
The number of the sunshine that generating efficiency is with silicon substrate can absorb directly related.
Owing to silicon is indirect band-gap semiconductor, it is general all more than 30% to the reflectivity of sunshine, because of
How this, reduce the reflectivity of the sunshine of silicon chip surface, allows silicon chip surface suction as much as possible
Receive sunshine and just become to improve the key factor of silicon substrate solar cell generating efficiency.Current work
In skill, the technique being most frequently with is to utilize strong acid to carry out corroding thus silicon face in silicon face shape
Becoming " worm " structure to reduce the reflectivity of silicon chip surface, this process costs is relatively low but effect
Not being especially good, additionally strong acid also brings along the problem in safety in production；Recent years, reaction
Ion etching (RIE etching), plasma etch process have obtained increasing use, this
The silicon wafer suede structure planting lithographic method formation is lower to the reflectivity of light.In order to improve sun electricity
The conversion efficiency in pond, needs effectively to be passivated the silicon chip after surface wool manufacturing, by oxidation
Method forms silica membrane at silicon face, uses relatively more technique to be to use ozone gas at present
Body carries out silicon chip passivation, i.e. use gas shower equipment that reacting gas is sprayed onto silicon chip surface pair
Surface is processed.Current gas shower equipment, at the silicon chip according to concrete application scenario
It is fixing after the concrete specification installation and debugging of the cell piece etching machine of reason processing line, work as cell piece
Etching machine situation changes, or runs into other situations and need to adjust gas shower equipment
When whole just very inconvenient, accordingly, it is desirable to provide one can facilitate, gas shower equipment is entered
The silicon chip surface passivation device that row adjusts.
Utility model content
For the use demand in existing technique, meet silicon chip passivation in solar cell manufacture process
Technological requirement, the purpose of this utility model is to provide photovoltaic cell silicon wafer surface passivating treatment work
A kind of Liftable type silicon chip gas passivation device in skill, they can be according to different product line feelings
Condition and technological requirement adjust the distance between passivation device and silicon chip easily.
For reaching the purpose of this utility model, the utility model proposes a kind of Liftable type silicon chip gas
Body passivation device, described processing means includes support, cylinder, gas shower assembly and
Extractor fan, described support is arranged across solar battery sheet etching machine, the upper horizontal stroke of described support
Being fixedly installed air cylinder fixed plate on beam, cylinder is fixed in air cylinder fixed plate, the piston of cylinder
Bar is fixed with gas shower assembly fixed plate, and gas shower assembly is sprayed with gas by fixed support
Drenching assembly fixed plate to connect, one end of lifting guide pillar is fixed with gas shower assembly fixed plate, separately
One end is fixed with lifter plate, and lifter plate is arranged at the top of air cylinder fixed plate, is provided with many
Individual buffer, between gas shower assembly to entablature for seal space, by framework and and its
Installing fixing sheet material to constitute, extractor fan is arranged at the lower section of gas shower assembly, and silicon chip passes
Roller is sent to be located between the two.
Preferably, described gas shower assembly includes housing and air admission hole, is provided with gas in housing
Body even flow plate, reacting gas is blown to the silicon of lower section from air admission hole after gas even flow plate equably
Piece surface.
Further preferably, described extractor fan is set to box body columnar structure, in the both sides of its upper cover plate
Position is provided with seam of bleeding, and is provided with multiple aperture of bleeding on left side plate, and front side or rear side set
Having venthole, it is connected with exhaust equipment by pipeline.
The beneficial effects of the utility model are, described Liftable type silicon chip gas passivation device,
Gas shower assembly and support are fixed rather than be directly anchored on cell piece etching machine, and will
Gas shower assembly is connected fixing by the piston rod of fixed plate and the cylinder being arranged on support,
Conveniently regulated the height of gas shower assembly distance silicon chip by the lifting of cylinder, thus optimize
The process conditions that silicon chip surface is processed；When the transformation of cell piece etching machine and adjustment, also very clever
It is convenient to live.
Brief description
By detailed description below in conjunction with the accompanying drawings, the utility model aforesaid and other purpose,
Feature and advantage will become clear from.Wherein:
Fig. 1 show the Liftable type silicon chip gas Passivation Treatment of an embodiment of the present utility model
The structural representation of device；
Fig. 2 show the Liftable type silicon chip gas Passivation Treatment of an embodiment of the present utility model
The structural representation of the gas shower assembly of device；
Fig. 3 show the Liftable type silicon chip gas Passivation Treatment of an embodiment of the present utility model
The structural representation of the extractor fan of device；
The structural representation of the buffer that Fig. 4 show in Fig. 1.
Detailed description of the invention
Liftable type silicon chip gas passivation with reference to the embodiment of the present utility model shown in Fig. 1
The structural representation of processing means, described processing means includes support 10, cylinder 14, and gas sprays
Drenching assembly 20 (seeing Fig. 2) and extractor fan 30 (seeing Fig. 3), described support 10 is across too
Sun can cell piece etching machine be arranged, and the entablature 102 of described support 10 is fixedly installed cylinder solid
Determining plate 12, cylinder 14 is fixed in air cylinder fixed plate 12, the piston rod 140 of cylinder 14 and gas spray
Drenching assembly fixed plate 22 to fix, gas shower assembly 20 is by fixed support 24 and gas shower group
Part fixed plate 22 connects, and one end of two lifting guide pillars 144 is solid with gas shower assembly fixed plate 22
Fixed, the other end is fixed with lifter plate 142, so, it is ensured that gas shower assembly 20 is in lifting
During adjustment, holding level is unlikely to tilt；Lifter plate 142 is arranged at air cylinder fixed plate 12
Top, is provided with multiple buffer 146, is close between gas shower assembly 20 to entablature
Envelope space, installs fixing transparent panel composition by framework 16 and with it, and the place's of preventing process gases is let out
Leakage, extractor fan 30 is arranged at the lower section of gas shower assembly 20, and silicon chip delivery roller 40 is located at
Between the two.
Liftable type silicon chip gas passivation device of the present utility model, by gas shower assembly
Fix with support rather than be directly anchored on cell piece etching machine, and gas shower assembly is led to
The piston rod of the cylinder crossed fixed plate and be arranged on support is connected fixing, by the lifting of cylinder
Conveniently regulate the height of gas shower assembly distance silicon chip, thus optimize what silicon chip surface was processed
Process conditions；When the transformation of cell piece etching machine and adjustment, also very flexible.
In above-described embodiment, the structural representation of described gas shower assembly 20 participates in Fig. 2, its bag
Include housing 20 and air admission hole 201, in housing 20, be provided with gas even flow plate (not shown), reaction
Gas is blown to the silicon chip surface of lower section from air admission hole 201 after gas even flow plate equably；Surface
Gas after process be arranged at extractor fan 30 below take away avoid reveal, extractor fan
The structural representation of 30 sees Fig. 3, and it is set to box body columnar structure, in the both sides of upper cover plate 30
Position is provided with seam 31 of bleeding, and is provided with multiple aperture 33, front side or rear side of bleeding on left side plate
Being provided with venthole 35, it is connected with exhaust equipment, by reacted gas from battery by pipeline
Piece etching machine is taken away.
Lifter plate 12 arranges lifting guide pillar 144 and gas can be greatly improved with multiple buffers 146
The stationarity when moving up and down with cylinder for the body spray assemblies, keeps the level of gas shower assembly
Degree.Described buffer 146 can be commercially available air buffer, and its structural representation sees figure
4, its main body 1460 constructs for hollow cylindrical, with external screw thread 1461, which is provided with two and fixes
Nut 1462 and 1463, bottom is shrinking connecting-rod 1465 and abutting portion 1467.
Extractor fan 30 in the embodiment of Fig. 1 is provided with two, and in actual applications, it is permissible
The size of the passage according to the silicon chip processing and gas shower assembly comes corresponding design, the application
This is not restricted.
Liftable type silicon chip gas passivation device of the present utility model, by the lifting of cylinder
Regulate the height of gas shower assembly distance silicon chip easily to optimize silicon chip surface process
Process conditions；Use stent-type design, when the transformation of cell piece etching machine and adjustment, also easily
In operation and adjustment.
The utility model is not limited to described embodiment, and those skilled in the art is not taking off
In the range of spirit of the present utility model i.e. discloses, still can make some and revise or change, therefore this reality
Limit in the range of standard with claims by novel rights protection scope.
Claims (3)
1. a Liftable type silicon chip gas passivation device, it is characterised in that described process
Device includes support, cylinder, gas shower assembly and extractor fan, and described support is across too
Sun can cell piece etching machine be arranged, and the entablature of described support is fixedly installed air cylinder fixed plate,
Cylinder is fixed in air cylinder fixed plate, and the piston rod of cylinder is fixed with gas shower assembly fixed plate,
Gas shower assembly is connected with gas shower assembly fixed plate by fixed support, lifting guide pillar
One end is fixed with gas shower assembly fixed plate, and the other end is fixed with lifter plate, and lifter plate is arranged
It in the top of air cylinder fixed plate, is provided with multiple buffer, the supreme horizontal stroke of gas shower assembly
For sealing space between beam, by framework and with it, fixing sheet material composition, extractor fan are installed
Being arranged at the lower section of gas shower assembly, silicon chip delivery roller is located between the two.
2. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1, its
Being characterised by, described gas shower assembly includes housing and air admission hole, is provided with gas in housing
Even flow plate, reacting gas is blown to the silicon chip of lower section from air admission hole after gas even flow plate equably
Surface.
3. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1 or 2,
It is characterized in that, described extractor fan is set to box body columnar structure, in the both sides of its upper cover plate
Position is provided with seam of bleeding, and is provided with multiple aperture of bleeding on left side plate, and front side or rear side are provided with
Venthole, it is connected with exhaust equipment by pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620467629.1U CN205621759U (en) | 2016-05-20 | 2016-05-20 | Liftable gaseous passivation treating device of formula silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620467629.1U CN205621759U (en) | 2016-05-20 | 2016-05-20 | Liftable gaseous passivation treating device of formula silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205621759U true CN205621759U (en) | 2016-10-05 |
Family
ID=57024362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620467629.1U Withdrawn - After Issue CN205621759U (en) | 2016-05-20 | 2016-05-20 | Liftable gaseous passivation treating device of formula silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205621759U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845779A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Lift-type silicon chip gas passivation treatment device |
| CN112582501A (en) * | 2020-12-14 | 2021-03-30 | 张家港博佑光电科技有限公司 | Silicon solar cell RENA polycrystalline texturing processing method |
-
2016
- 2016-05-20 CN CN201620467629.1U patent/CN205621759U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845779A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Lift-type silicon chip gas passivation treatment device |
| CN112582501A (en) * | 2020-12-14 | 2021-03-30 | 张家港博佑光电科技有限公司 | Silicon solar cell RENA polycrystalline texturing processing method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20161005 Effective date of abandoning: 20170825 |
|
| AV01 | Patent right actively abandoned |