CN105845779B - A kind of Liftable type silicon chip gas passivation device - Google Patents
A kind of Liftable type silicon chip gas passivation device Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000002161 passivation Methods 0.000 title claims abstract description 21
- 239000000872 buffer Substances 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 36
- 239000007921 spray Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 20
- 230000003628 erosive effect Effects 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 47
- 238000010248 power generation Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
技术领域technical field
本发明涉及光伏太阳能电池制造技术领域，特别涉及光伏电池硅片表面钝化处理工艺中的一种可升降式气体钝化处理设备。The invention relates to the technical field of photovoltaic solar cell manufacturing, in particular to a liftable gas passivation treatment equipment in the surface passivation treatment process of silicon wafers of photovoltaic cells.
背景技术Background technique
随着传统的石化燃料的大规模使用造成的环境问题日益严峻，清洁能源如利用太阳能进行发电的光伏发电越来越受到各国的重视，近几年来得到了快速的发展，但在像中国这样的发展中国家，光伏发电的总量与传统的火力发电总量相比仍然非常小。与相比传统的火力发电，影响光伏发电迅速普及的一个重要原因就是发电成本仍然比较高，而降低光伏发电成本的一个重要途径就是提高光伏发电的效率。With the increasingly serious environmental problems caused by the large-scale use of traditional fossil fuels, clean energy such as photovoltaic power generation using solar energy has attracted more and more attention from various countries, and has developed rapidly in recent years, but in countries like China In developing countries, the total amount of photovoltaic power generation is still very small compared with the total amount of traditional thermal power generation. Compared with traditional thermal power generation, an important reason affecting the rapid popularization of photovoltaic power generation is that the cost of power generation is still relatively high, and an important way to reduce the cost of photovoltaic power generation is to improve the efficiency of photovoltaic power generation.
目前在光伏领域使用最多的是硅基板太阳电池，硅基板太阳电池的发电效率是与硅基板表面能够吸收到的太阳光的多少直接相关的。由于硅是间接带隙半导体，其对太阳光的反射率一般都在30％以上，因此，如何降低硅片表面的太阳光的反射率，让硅片表面尽可能多的吸收太阳光就成了提高硅基板太阳电池发电效率的关键因素。目前的工艺中，最常采用的工艺是利用强酸对硅表面进行腐蚀从而在硅表面形成“蠕虫”结构来降低硅片表面的反射率，这种工艺成本较低但效果不是特别好，另外强酸也会带来安全生产上的问题；最近几年，反应离子刻蚀(RIE刻蚀)、等离子体刻蚀工艺得到了越来越多的使用，这种刻蚀方法形成的硅片绒面结构对光的反射率更低。为了提高太阳电池的转换效率，需要对表面制绒后的硅片进行有效的钝化，通过氧化法在硅表面形成二氧化硅薄膜，目前采用比较多的工艺是采用臭氧气体进行硅片钝化，即，使用气体喷淋设备将反应气体喷到硅片表面对表面进行处理。目前的气体喷淋设备，在根据具体应用场合的硅片处理工艺线的电池片刻蚀机的具体规格安装调试后是固定的，当电池片刻蚀机状况发生变更，或者遇到其他情况需要对气体喷淋设备进行调整时就非常不方便，因此，需要提供一种可以方便对气体喷淋设备进行调整的硅片表面钝化处理装置。At present, silicon substrate solar cells are the most used in the field of photovoltaics. The power generation efficiency of silicon substrate solar cells is directly related to the amount of sunlight that can be absorbed by the surface of the silicon substrate. Since silicon is an indirect bandgap semiconductor, its reflectivity to sunlight is generally above 30%. Therefore, how to reduce the reflectivity of sunlight on the surface of the silicon wafer so that the surface of the silicon wafer absorbs as much sunlight as possible becomes a problem. A key factor in improving the power generation efficiency of silicon-based solar cells. In the current process, the most commonly used process is to use strong acid to corrode the silicon surface to form a "worm" structure on the silicon surface to reduce the reflectivity of the silicon wafer surface. This process is low in cost but not particularly effective. In addition, strong acid It will also bring about problems in safe production; in recent years, reactive ion etching (RIE etching) and plasma etching processes have been used more and more. The silicon wafer textured structure formed by this etching method Less reflective to light. In order to improve the conversion efficiency of solar cells, it is necessary to effectively passivate the silicon wafers after surface texture, and form a silicon dioxide film on the silicon surface by oxidation. At present, the most commonly used process is to use ozone gas to passivate silicon wafers. , That is, the reaction gas is sprayed onto the surface of the silicon wafer using a gas spraying device to treat the surface. The current gas spray equipment is fixed after installation and commissioning according to the specific specifications of the cell etching machine in the silicon wafer processing process line of the specific application. It is very inconvenient to adjust the spraying equipment. Therefore, it is necessary to provide a silicon wafer surface passivation treatment device that can easily adjust the gas spraying equipment.
发明内容Contents of the invention
针对现有工艺中的使用需求，满足太阳电池制造工艺中硅片钝化的工艺要求，本发明的目的是提供光伏电池硅片表面钝化处理工艺中一种可升降式硅片气体钝化处理装置，其可以根据不同的产线情况和工艺要求方便地调整钝化处理装置与硅片之间的距离。Aiming at the use requirements in the existing process and meeting the process requirements of silicon wafer passivation in the solar cell manufacturing process, the purpose of the present invention is to provide a liftable silicon wafer gas passivation treatment process in the silicon wafer surface passivation treatment process of photovoltaic cells device, which can conveniently adjust the distance between the passivation treatment device and the silicon wafer according to different production line conditions and process requirements.
为达到本发明的目的，本发明提出一种可升降式硅片气体钝化处理装置，所述处理装置包括支架，气缸，气体喷淋组件以及抽风装置，所述支架横跨太阳能电池片刻蚀机设置，所述支架的上横梁上固定设置有气缸固定板，气缸固定在气缸固定板上，气缸的活塞杆与气体喷淋组件固定板固定，气体喷淋组件通过固定支架与气体喷淋组件固定板连接，升降导杆的一端与气体喷淋组件固定板固定，另一端与升降板固定，升降板设置于气缸固定板的上方，其上设置有多个缓冲器，气体喷淋组件至上横梁之间为密封空间，通过框架及与其安装固定的透明板构成，抽风装置设置于气体喷淋组件的下方，硅片传送滚轮设于两者之间。In order to achieve the purpose of the present invention, the present invention proposes a liftable silicon wafer gas passivation processing device, which includes a support, a cylinder, a gas spray assembly and an exhaust device, and the support spans the solar cell etching machine The upper beam of the bracket is fixed with a cylinder fixing plate, the cylinder is fixed on the cylinder fixing plate, the piston rod of the cylinder is fixed to the gas spray assembly fixing plate, and the gas spray assembly is fixed to the gas spray assembly through the fixed bracket Plate connection, one end of the lifting guide rod is fixed to the fixed plate of the gas spray assembly, and the other end is fixed to the lifting plate. The room is a sealed space, which is composed of a frame and a transparent plate installed and fixed with it. The exhaust device is arranged under the gas spray assembly, and the silicon wafer conveying roller is arranged between the two.
优选的，所述气体喷淋组件包括壳体和进气孔，壳体内设置有气体匀流板，反应气体从进气孔经过气体匀流板后均匀地吹至下方的硅片表面。Preferably, the gas spray assembly includes a housing and an air inlet, and a gas uniform flow plate is arranged in the housing, and the reaction gas is evenly blown from the air inlet through the gas uniform flow plate to the surface of the silicon wafer below.
再优选的，所述抽风装置设置为盒体状构造，在其上盖板的两侧部位设置有抽气缝，在左右侧板上设有多个抽气小孔，前侧或后侧设有出气孔，其通过管道与抽风设备相连。More preferably, the air exhaust device is set in a box-like structure, air extraction slots are provided on both sides of the upper cover plate, a plurality of air extraction small holes are provided on the left and right side plates, and air extraction holes are provided on the front or rear side. There is an air outlet, which is connected with the ventilation equipment through a pipeline.
本发明的可升降式硅片气体钝化处理装置，将气体喷淋组件与支架固定而不是直接固定在电池片刻蚀机上，并将气体喷淋组件通过固定板与设置在支架上的气缸的活塞杆连接固定，通过气缸的升降来方便调节气体喷淋组件距离硅片的高度，从而优化硅片表面处理的工艺条件；在电池片刻蚀机改造和调整时，也非常灵活方便。The liftable silicon wafer gas passivation processing device of the present invention fixes the gas spray assembly and the bracket instead of directly fixing it on the cell etching machine, and passes the gas spray assembly through the fixed plate and the piston of the cylinder arranged on the bracket The rod is connected and fixed, and the height of the gas spray assembly from the silicon wafer can be adjusted conveniently through the lifting of the cylinder, so as to optimize the process conditions of the surface treatment of the silicon wafer; it is also very flexible and convenient when the cell etching machine is modified and adjusted.
附图说明Description of drawings
通过下面结合附图的详细描述，本发明前述的和其他的目的、特征和优点将变得显而易见。其中：The foregoing and other objects, features and advantages of the present invention will become apparent from the following detailed description in conjunction with the accompanying drawings. in:
图1所示为本发明的一实施例的可升降式硅片气体钝化处理装置的结构示意图；Fig. 1 is a schematic structural view of a liftable silicon wafer gas passivation treatment device according to an embodiment of the present invention;
图2所示为本发明的一实施例的可升降式硅片气体钝化处理装置的气体喷淋组件的结构示意图；FIG. 2 is a schematic structural view of a gas shower assembly of a liftable silicon wafer gas passivation treatment device according to an embodiment of the present invention;
图3所示为本发明的一实施例的可升降式硅片气体钝化处理装置的抽风装置的结构示意图；FIG. 3 is a schematic structural view of an exhaust device of a liftable silicon wafer gas passivation treatment device according to an embodiment of the present invention;
图4所示为图1中的缓冲器的结构示意图。FIG. 4 is a schematic structural diagram of the buffer in FIG. 1 .
具体实施方式detailed description
参照图1所示的本发明的一实施例的可升降式硅片气体钝化处理装置的结构示意图，所述处理装置包括支架10，气缸14，气体喷淋组件20(参见图2)以及抽风装置30(参见图3)，所述支架10横跨太阳能电池片刻蚀机设置，所述支架10的上横梁102上固定设置有气缸固定板12，气缸14固定在气缸固定板12上，气缸14的活塞杆140与气体喷淋组件固定板22固定，气体喷淋组件20通过固定支架24与气体喷淋组件固定板22连接，两个升降导杆144的一端与气体喷淋组件固定板22固定，另一端与升降板142固定，如此，可以保证气体喷淋组件20在升降调整的过程中保持水平不至于倾斜；升降板142设置于气缸固定板12的上方，其上设置有多个缓冲器146，气体喷淋组件20至上横梁之间为密封空间，通过框架16及与其安装固定的透明板构成，防止处理气体泄漏，抽风装置30设置于气体喷淋组件20的下方，硅片传送滚轮40设于两者之间。With reference to the schematic structural view of the liftable silicon chip gas passivation processing device of an embodiment of the present invention shown in Fig. 1, described processing device comprises support 10, cylinder 14, gas shower assembly 20 (referring to Fig. 2) and draft Device 30 (see FIG. 3 ), the support 10 is arranged across the solar cell etching machine, the upper beam 102 of the support 10 is fixedly provided with a cylinder fixing plate 12, the cylinder 14 is fixed on the cylinder fixing plate 12, and the cylinder 14 The piston rod 140 is fixed to the gas spray assembly fixing plate 22, the gas spray assembly 20 is connected to the gas spray assembly fixing plate 22 through the fixing bracket 24, and one end of the two lifting guide rods 144 is fixed to the gas spray assembly fixing plate 22 , the other end is fixed with the lifting plate 142, so that the gas spray assembly 20 can be kept horizontal and not tilted during the lifting adjustment process; the lifting plate 142 is arranged above the cylinder fixing plate 12, and a plurality of buffers are arranged on it 146, between the gas spray assembly 20 and the upper cross beam is a sealed space, which is formed by the frame 16 and a transparent plate fixed therewith to prevent leakage of the processing gas. set in between.
本发明的可升降式硅片气体钝化处理装置，将气体喷淋组件与支架固定而不是直接固定在电池片刻蚀机上，并将气体喷淋组件通过固定板与设置在支架上的气缸的活塞杆连接固定，通过气缸的升降来方便调节气体喷淋组件距离硅片的高度，从而优化硅片表面处理的工艺条件；在电池片刻蚀机改造和调整时，也非常灵活方便。The liftable silicon wafer gas passivation processing device of the present invention fixes the gas spray assembly and the bracket instead of directly fixing it on the cell etching machine, and passes the gas spray assembly through the fixed plate and the piston of the cylinder arranged on the bracket The rod is connected and fixed, and the height of the gas spray assembly from the silicon wafer can be adjusted conveniently through the lifting of the cylinder, so as to optimize the process conditions of the surface treatment of the silicon wafer; it is also very flexible and convenient when the cell etching machine is modified and adjusted.
上述实施例中，所述气体喷淋组件20的结构示意图参加图2，其包括壳体20和进气孔201，壳体20内设置有气体匀流板(未图示)，反应气体从进气孔201经过气体匀流板后均匀地吹至下方的硅片表面；表面处理后的气体被设置于其下方的抽风装置30抽走避免泄露，抽风装置30的结构示意图参见图3，其设置为盒体状构造，在上盖板30的两侧部位设置有抽气缝31，在左右侧板上设有多个抽气小孔33，前侧或后侧设有出气孔35，其通过管道与抽风设备相连，将反应后的气体从电池片刻蚀机抽走。In the above-mentioned embodiment, the structural diagram of the gas spray assembly 20 is shown in Fig. 2, which includes a housing 20 and an air inlet 201. A gas uniform flow plate (not shown) is arranged in the housing 20, and the reaction gas flows from the inlet The air holes 201 are evenly blown to the surface of the silicon wafer below after passing through the gas uniform flow plate; the surface-treated gas is sucked away by the ventilation device 30 arranged below it to avoid leakage. It is a box-shaped structure, with air extraction slots 31 arranged on both sides of the upper cover plate 30, a plurality of air extraction small holes 33 on the left and right side plates, and air outlet holes 35 on the front or rear side, which pass through The pipeline is connected with the ventilation equipment, and the gas after the reaction is sucked away from the cell etching machine.
在升降板12上设置升降导杆144与多个缓冲器146可以大幅提高气体喷淋组件在随气缸上下运动时的平稳性，保持气体喷淋组件的水平度。所述的缓冲器146可以是市售的空气缓冲器，其结构示意图参见图4，其主体1460为中空柱形构造，带有外螺纹1461，其上设有两个固定螺母1462和1463，下部为伸缩连杆1465以及抵接部位1467。Setting the lifting guide rod 144 and multiple buffers 146 on the lifting plate 12 can greatly improve the stability of the gas spray assembly when it moves up and down with the cylinder, and maintain the levelness of the gas spray assembly. The buffer 146 can be a commercially available air buffer. Its structural diagram is shown in FIG. It is the telescopic link 1465 and the abutment part 1467 .
图1的实施例中的抽风装置30设置有两个，在实际应用中，其可以根据处理的硅片的道次以及气体喷淋组件的尺寸来对应设计，本申请对此不作限制。There are two exhaust devices 30 in the embodiment of FIG. 1 . In practical applications, they can be designed correspondingly according to the number of silicon wafers to be processed and the size of the gas shower assembly, which is not limited in this application.
本发明的可升降式硅片气体钝化处理装置，通过气缸的升降来非常方便地调节气体喷淋组件距离硅片的高度来优化硅片表面处理的工艺条件；采用支架式设计，在电池片刻蚀机改造和调整时，也易于操作和调整。The liftable silicon wafer gas passivation treatment device of the present invention can adjust the height of the gas spray assembly from the silicon wafer very conveniently through the lifting of the cylinder to optimize the process conditions for the surface treatment of the silicon wafer; It is also easy to operate and adjust when the erosion machine is modified and adjusted.
本发明并不局限于所述的实施例，本领域的技术人员在不脱离本发明的精神即公开范围内，仍可作一些修正或改变，故本发明的权利保护范围以权利要求书限定的范围为准。The present invention is not limited to the described embodiment, and those skilled in the art can still make some amendments or changes without departing from the spirit of the present invention, that is, within the disclosed scope, so the protection scope of the present invention is defined by the claims range prevails.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
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| CN205159348U (en) * | 2015-12-04 | 2016-04-13 | 常州时创能源科技有限公司 | Crystal silicon solar cell's defect passivation treating device |
| CN205282456U (en) * | 2015-12-10 | 2016-06-01 | 杭州力云科技有限公司 | Solar energy silicon chip diffusion equipment |
| CN205621759U (en) * | 2016-05-20 | 2016-10-05 | 苏州中世太新能源科技有限公司 | Liftable gaseous passivation treating device of formula silicon chip |
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