CN105845779B - A kind of Liftable type silicon chip gas passivation device - Google Patents
A kind of Liftable type silicon chip gas passivation device Download PDFInfo
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- CN105845779B CN105845779B CN201610340076.8A CN201610340076A CN105845779B CN 105845779 B CN105845779 B CN 105845779B CN 201610340076 A CN201610340076 A CN 201610340076A CN 105845779 B CN105845779 B CN 105845779B
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- gas
- silicon chip
- fixed
- gas shower
- cylinder
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 238000002161 passivation Methods 0.000 title claims abstract description 20
- UIIMBOGNXHQVGW-UHFFFAOYSA-M buffer Substances [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims description 11
- 238000005086 pumping Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 230000003628 erosive Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 53
- 210000004027 cells Anatomy 0.000 description 15
- 238000002310 reflectometry Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000002381 Plasma Anatomy 0.000 description 1
- 210000002268 Wool Anatomy 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative Effects 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention proposes a kind of Liftable type silicon chip gas passivation device, it includes support, cylinder, gas shower component and extractor fan, the support is set across silicon chip erosion machine, air cylinder fixed plate is fixedly installed on the entablature of the support, cylinder is fixed in air cylinder fixed plate, the piston rod of cylinder is fixed with gas shower component fixed plate, one end of lifting guide pillar is fixed with gas shower component fixed plate, the other end is fixed with lifter plate, lifter plate is arranged at the top of air cylinder fixed plate, it is provided with multiple buffers, gas shower component between entablature be sealing space, by framework and fixed transparent panel is installed with it to constitute, extractor fan is arranged at the lower section of gas shower component, silicon chip delivery roller is located between the two.The Liftable type silicon chip gas passivation device of the present invention, easily adjusts gas shower component apart from the height of silicon chip to optimize the process conditions that silicon chip surface is handled by the lifting of cylinder；Designed using stent-type, when silicon chip handling process producing line is transformed and is adjusted, be also easy to operate and adjust.
Description
Technical field
The present invention relates to photovoltaic solar cell manufacturing technology field, more particularly to photovoltaic cell silicon wafer surface passivating treatment
A kind of Liftable type gas Passivation Treatment equipment in technique.
Background technology
As the environmental problem that the large-scale use of traditional fossil fuel is caused is increasingly serious, clean energy resource is as using too
The photovoltaic generation that sun can be generated electricity increasingly is paid attention to by various countries, and quick development has been obtained in recent years, but as in
Developing country as state, the total amount of photovoltaic generation is still very small compared with traditional thermal power generation total amount.The biography compared with
The thermal power generation of system, the major reason that influence photovoltaic generation is popularized rapidly is exactly that cost of electricity-generating is still higher, and is reduced
One important channel of photovoltaic generation cost is exactly the efficiency for improving photovoltaic generation.
At present photovoltaic art using it is most be silicon substrate solar cell, the generating efficiency of silicon substrate solar cell be with
The number for the sunshine that silicon substrate can be absorbed to is directly related.Because silicon is indirect band-gap semiconductor, it is to the sun
How therefore the reflectivity of light is general, reduces the reflectivity of the sunshine of silicon chip surface all more than 30%, allows silicon chip surface to use up
Absorption sunshine more than possible is just into the key factor for improving silicon substrate solar cell generating efficiency.In current technique, most
Frequently with technique be that corrosion is carried out to silicon face using strong acid so as to reducing silicon chip table in silicon face formation " worm " structure
The reflectivity in face, this process costs are relatively low but effect is not especially good, the problem of strong acid is also brought along in safety in production in addition；
Recent years, reactive ion etching (RIE etchings), plasma etch process have obtained more and more using, this etching
The silicon wafer suede structure of method formation is lower to the reflectivity of light.In order to improve the conversion efficiency of solar cell, it is necessary to surface
Silicon chip after making herbs into wool is effectively passivated, by oxidizing process in silicon face formation silica membrane, at present using relatively more
Technique be using ozone gas carry out silicon chip passivation, i.e. reacting gas is sprayed onto silicon chip surface pair using gas shower equipment
Surface is handled.Current gas shower equipment, in battery a moment of the silicon chip handling process line according to concrete application occasion
It is fixed after the The concrete specification installation and debugging of erosion machine, when cell piece etching machine situation is changed, or runs into other situations
It is just very inconvenient when needing to be adjusted gas shower equipment, accordingly, it is desirable to provide one kind can facilitate to gas shower
The silicon chip surface passivation device that equipment is adjusted.
The content of the invention
For the use demand in existing process, the technological requirement that silicon chip is passivated in solar cell manufacture process is met, this
The purpose of invention is to provide a kind of Liftable type silicon chip gas Passivation Treatment dress in photovoltaic cell silicon wafer surface passivating treatment technique
Put, it can easily adjust the distance between passivation device and silicon chip according to different producing line situations and technological requirement.
To achieve the object of the present invention, the present invention proposes a kind of Liftable type silicon chip gas passivation device, the place
Managing device includes support, cylinder, gas shower component and extractor fan, and the support is set across solar battery sheet etching machine
Put, air cylinder fixed plate is fixedly installed on the entablature of the support, cylinder is fixed in air cylinder fixed plate, the piston rod of cylinder
Fix, gas shower component is connected by fixed support with gas shower component fixed plate, rise with gas shower component fixed plate
One end of drop guide rod is fixed with gas shower component fixed plate, and the other end is fixed with lifter plate, and lifter plate is arranged at cylinder and fixed
The top of plate, is provided with multiple buffers, gas shower component to being sealing space between entablature, by framework and with
It is installed fixed transparent panel and constituted, and extractor fan is arranged at the lower section of gas shower component, and silicon chip delivery roller is located at both
Between.
It is preferred that, the gas shower component includes being provided with gas even flow plate, reaction gas in housing and air admission hole, housing
Body is equably blown to the silicon chip surface of lower section from air admission hole after gas even flow plate.
Further preferably, the extractor fan is set to box body columnar structure, and the both sides position of its upper cover plate is provided with pumping
Seam, is provided with multiple pumping apertures on left side plate, and front side or rear side are provided with venthole, and it passes through pipeline and exhaust equipment phase
Even.
The Liftable type silicon chip gas passivation device of the present invention, gas shower component and support is fixed rather than directly
Connect and be fixed on cell piece etching machine, and gas shower component is passed through into fixed plate and the piston rod for the cylinder being arranged on support
It is connected, height of the gas shower component apart from silicon chip is conveniently adjusted by the lifting of cylinder, so as to optimize silicon chip surface
The process conditions of processing；It is also very flexible when cell piece etching machine is transformed and is adjusted.
Brief description of the drawings
By detailed description below in conjunction with the accompanying drawings, the present invention is foregoing will to be become with other objects, features and advantages
Obviously.Wherein：
Fig. 1 show the structural representation of the Liftable type silicon chip gas passivation device of one embodiment of the invention；
Fig. 2 show the gas shower component of the Liftable type silicon chip gas passivation device of one embodiment of the invention
Structural representation；
Fig. 3 show the knot of the extractor fan of the Liftable type silicon chip gas passivation device of one embodiment of the invention
Structure schematic diagram；
Fig. 4 show the structural representation of the buffer in Fig. 1.
Embodiment
The structural representation of the Liftable type silicon chip gas passivation device of one embodiment of the invention shown in reference picture 1
Figure, the processing unit include support 10, cylinder 14, gas shower component 20 (referring to Fig. 2) and extractor fan 30 are (referring to figure
3), the support 10 is set across solar battery sheet etching machine, and cylinder is fixedly installed on the entablature 102 of the support 10
Fixed plate 12, cylinder 14 is fixed in air cylinder fixed plate 12, and piston rod 140 and the gas shower component fixed plate 22 of cylinder 14 are consolidated
Fixed, gas shower component 20 is connected by fixed support 24 with gas shower component fixed plate 22, and the one of two lifting guide pillars 144
End is fixed with gas shower component fixed plate 22, and the other end is fixed with lifter plate 142, so, it is ensured that gas shower component
20 during lift adjustment holding level be unlikely to tilt；Lifter plate 142 is arranged at the top of air cylinder fixed plate 12, thereon
Multiple buffers 146 are provided with, gas shower component 20 is installed to being sealing space between entablature by framework 16 and with it
Fixed transparent panel is constituted, and prevents processing gas from leaking, and extractor fan 30 is arranged at the lower section of gas shower component 20, and silicon chip is passed
Roller 40 is sent located between the two.
The Liftable type silicon chip gas passivation device of the present invention, gas shower component and support is fixed rather than directly
Connect and be fixed on cell piece etching machine, and gas shower component is passed through into fixed plate and the piston rod for the cylinder being arranged on support
It is connected, height of the gas shower component apart from silicon chip is conveniently adjusted by the lifting of cylinder, so as to optimize silicon chip surface
The process conditions of processing；It is also very flexible when cell piece etching machine is transformed and is adjusted.
In above-described embodiment, the structural representation of the gas shower component 20 participates in Fig. 2, and it includes housing 20 and air inlet
Be provided with gas even flow plate (not shown) in hole 201, housing 20, reacting gas from air admission hole 201 after gas even flow plate
The silicon chip surface of lower section is blown to evenly；The extractor fan 30 that gas after surface treatment is arranged at below, which is taken away, to be avoided letting out
Dew, the structural representation of extractor fan 30 is referring to Fig. 3, and it is set to box body columnar structure, is set at the both sides position of upper cover plate 30
Have pumping seam 31, provided with multiple pumping apertures 33 on left side plate, front side or rear side are provided with venthole 35, its by pipeline with
Exhaust equipment is connected, and reacted gas is taken away from cell piece etching machine.
Set lifting guide pillar 144 and multiple buffers 146 to greatly improve gas shower component on lifter plate 12 to exist
Stationarity when being moved up and down with cylinder, keeps the levelness of gas shower component.Described buffer 146 can be commercially available
Air buffer, its structural representation is constructed for hollow cylindrical referring to Fig. 4, its main body 1460, with external screw thread 1461, set thereon
There are two fixing nuts 1462 and 1463, bottom is shrinking connecting-rod 1465 and abutting portion 1467.
Extractor fan 30 in Fig. 1 embodiment is provided with two, in actual applications, and it can be according to the silicon chip of processing
Passage and the size of gas shower component designed to correspond to, the application is not restricted to this.
The Liftable type silicon chip gas passivation device of the present invention, gas is easily adjusted by the lifting of cylinder
Body spray assemblies optimize the process conditions of silicon chip surface processing apart from the height of silicon chip；Designed using stent-type, in cell piece
When etching machine is transformed and adjusted, it is also easy to operate and adjusts.
The invention is not limited in described embodiment, those skilled in the art is not departing from the spirit i.e. public affairs of the present invention
In the range of opening, can still make some amendments or change, thus the scope that is limited using claims of the scope of the present invention as
It is accurate.
Claims (3)
1. a kind of Liftable type silicon chip gas passivation device, it is characterised in that the processing unit includes support, cylinder,
Gas shower component and extractor fan, the support are set across solar battery sheet etching machine, the entablature of the support
On be fixedly installed air cylinder fixed plate, cylinder is fixed in air cylinder fixed plate, and piston rod and the gas shower component of cylinder are fixed
Plate is fixed, and gas shower component is connected by fixed support with gas shower component fixed plate, one end of lifting guide pillar and gas
Spray assemblies fixed plate is fixed, and the other end is fixed with lifter plate, and lifter plate is arranged at the top of air cylinder fixed plate, is provided with
Multiple buffers, gas shower component installs fixed transparent panel to being sealing space between entablature by framework and with it
Constitute, extractor fan is arranged at the lower section of gas shower component, and silicon chip delivery roller is located between the two.
2. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1, it is characterised in that the gas spray
Drenching component includes being provided with gas even flow plate in housing and air admission hole, housing, and reacting gas passes through gas even flow plate from air admission hole
The silicon chip surface of lower section is equably blown to afterwards.
3. a kind of Liftable type silicon chip gas passivation device as claimed in claim 1 or 2, it is characterised in that described to take out
Wind apparatus is set to box body columnar structure, pumping seam is provided with the both sides position of its upper cover plate, provided with multiple on left side plate
Aperture is evacuated, front side or rear side are provided with venthole, and it is connected by pipeline with exhaust equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340076.8A CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610340076.8A CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105845779A CN105845779A (en) | 2016-08-10 |
| CN105845779B true CN105845779B (en) | 2017-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610340076.8A Active CN105845779B (en) | 2016-05-20 | 2016-05-20 | A kind of Liftable type silicon chip gas passivation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109830573A (en) * | 2019-03-22 | 2019-05-31 | 南京林业大学 | A kind of improved slot type ozone treating system for solar cell silicon wafer processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101625078B1 (en) * | 2009-09-02 | 2016-05-27 | 주식회사 원익아이피에스 | Gas injecting device and Substrate processing apparatus using the same |
| CN205159348U (en) * | 2015-12-04 | 2016-04-13 | 常州时创能源科技有限公司 | Crystal silicon solar cell's defect passivation treating device |
| CN205282456U (en) * | 2015-12-10 | 2016-06-01 | 杭州力云科技有限公司 | Solar energy silicon chip diffusion equipment |
| CN205621759U (en) * | 2016-05-20 | 2016-10-05 | 苏州中世太新能源科技有限公司 | Liftable gaseous passivation treating device of formula silicon chip |
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