CN205616991U - Gaseous spray assembly of photovoltaic cell silicon chip surface passivation and gaseous passivation equipment - Google Patents

Abstract

The utility model proposes a photovoltaic battery silicon wafer surface passivation gas spray assembly, which includes a spray plate device and an exhaust device placed below it. The vent hole connected to the generator, the gas uniform flow plate assembly arranged inside the casing and connected to the casing, the fixed plate and the baffle arranged on the side of the casing; the exhaust device is placed directly under the spray plate, The silicon wafers to be processed pass between the spray plate device and the exhaust device. The gas spray assembly of the gas passivation equipment on the surface of silicon wafers of photovoltaic cells of the utility model adopts three-stage gas uniform flow, which can ensure the uniformity of gas between silicon wafers and in the wafer; the design of adjustable height is convenient for practical application It is adjusted according to the specific conditions of the production line to improve its application adaptability; in addition, through the height-adjustable baffle design, it avoids the interference of external gas on the reaction gas and thus affects the quality of silicon wafer passivation. The gas spray assembly and the passivation equipment of the utility model can greatly improve the passivation effect of the silicon chip, improve the yield rate of the silicon chip processing, and save the production cost.

Description

A photovoltaic battery silicon wafer surface passivation gas spray assembly and gas passivation equipment

technical field

The utility model relates to the technical field of photovoltaic solar cell manufacturing, in particular to a photovoltaic cell surface passivation gas spray assembly and gas passivation equipment.

Background technique

With the increasingly serious environmental problems caused by the large-scale use of traditional fossil fuels, clean energy such as photovoltaic power generation using solar energy has attracted more and more attention from various countries, and has developed rapidly in recent years, but in countries like China In developing countries, the total amount of photovoltaic power generation is still very small compared with the total amount of traditional thermal power generation. Compared with traditional thermal power generation, an important reason affecting the rapid popularization of photovoltaic power generation is that the cost of power generation is still relatively high, and an important way to reduce the cost of photovoltaic power generation is to improve the efficiency of photovoltaic power generation.

At present, silicon substrate solar cells are the most used in the field of photovoltaics. The power generation efficiency of silicon substrate solar cells is directly related to the amount of sunlight that can be absorbed by the surface of the silicon substrate. Since silicon is an indirect bandgap semiconductor, its reflectivity to sunlight is generally above 30%. Therefore, how to reduce the reflectivity of sunlight on the surface of the silicon wafer so that the surface of the silicon wafer absorbs as much sunlight as possible becomes a problem. A key factor in improving the power generation efficiency of silicon-based solar cells. In the current process, the most commonly used process is to use strong acid to corrode the silicon surface to form a "worm" structure on the silicon surface to reduce the reflectivity of the silicon wafer surface. This process is low in cost but not particularly effective. In addition, strong acid It will also bring about problems in safe production; in recent years, reactive ion etching (RIE etching) and plasma etching processes have been used more and more. The silicon wafer textured structure formed by this etching method Less reflective to light. In order to improve the conversion efficiency of solar cells, it is necessary to effectively passivate the silicon wafers after surface texture, and form a silicon dioxide film on the silicon surface by oxidation. At present, the most commonly used process is to use ozone gas to passivate silicon wafers. , that is, use gas spraying equipment to spray reaction gas onto the surface of silicon wafers to treat the surface. In-line etching equipment generally has 5 or more equipment. The uniformity of gas spraying includes uniformity between wafers and wafers. Internal uniformity is the key factor affecting the effect of surface treatment; in addition, the spray equipment should try to avoid the influence of external airflow on the spray reaction gas.

Utility model content

Aiming at the use requirements in the existing technology and meeting the technological requirements of silicon chip passivation in the solar cell manufacturing process, the purpose of this utility model is to provide a photovoltaic cell silicon chip etching gas spray assembly and gas passivation equipment, which can greatly Improve the uniformity of gas spraying and avoid the influence of external gas, thereby improving the quality of passivation treatment on the surface of silicon wafers and improving the conversion efficiency of batteries.

In order to achieve the purpose of the utility model, the utility model proposes a photovoltaic cell silicon chip surface passivation gas spray assembly, the gas spray assembly includes a spray plate device and an exhaust device placed below it, the spray The plate device includes a shell, which is provided with a vent hole connected to the reaction gas generator, a gas uniform flow plate assembly arranged inside the shell and connected to the shell, a fixed plate and a baffle set on the side of the shell, The housing and the gas uniform flow plate assembly are fixed by screws and are provided with bolts for adjusting the height of the gas uniform flow plate assembly; Walk between the air exhaust device and the air exhaust device, which is in the shape of a box. The edge of the upper cover plate of the box body is provided with an air exhaust groove. There is an air outlet connected to the exhaust fan on the front or rear cover plate; the reaction gas sprayed from the spray plate is sucked away by the exhaust device below it to avoid gas leakage after treating the surface of the silicon wafer.

Preferably, the gas uniform flow plate assembly includes a primary uniform flow plate, a secondary uniform flow plate and a tertiary uniform flow plate, between the primary uniform flow plate and the secondary uniform flow plate and between the secondary uniform flow plate and the secondary uniform flow plate The tertiary leveling plates are fixed by bonding or welding.

More preferably, the length and width of the first-stage uniform flow plate are smaller than the length and width of the second-stage uniform flow plate and the third-stage uniform flow plate, and the width and length of the second-stage uniform flow plate and the third-stage uniform flow plate are the same .

More preferably, the baffle is provided with an oval slot for adjusting the height of the baffle.

More preferably, the first-stage uniform flow plate includes a hollow part, a blind-hole air groove, and symmetrically arranged air holes arranged in the middle of the air groove, and the air holes communicate with the air holes on the housing.

More preferably, the secondary uniform flow plate includes a plurality of blind hole ventilation parts arranged in a rectangular shape and evenly arranged, the ventilation hole arranged in the middle of the blind hole ventilation part and the two sides of the secondary uniform flow plate and the blind hole. The screw fixing holes between the ventilation parts of the holes, the ventilation holes communicate with the air grooves of the first level flow plate.

More preferably, the edge of the upper cover plate of the box body of the ventilation device is also provided with a plurality of small ventilation holes.

More preferably, the third-stage uniform flow plate is in the shape of a concave thin plate, and a plurality of micro-ventilation holes and screw fixing columns are evenly distributed on it, and the micro-ventilation holes communicate with the ventilation part of the second-stage uniform flow plate.

More preferably, the materials of the shell, the flow plate, the baffle and the ventilation device include polypropylene, polyvinyl chloride, chlorinated polyvinyl chloride, polyvinylidene fluoride, perfluoroalkoxy resin, polytetrafluoroethylene, Aluminum alloy or stainless steel material.

According to another purpose of the utility model, the utility model proposes a photovoltaic cell silicon wafer surface gas passivation equipment, the passivation equipment includes the above-mentioned gas spray assembly and a control box, the control box includes a control panel, a reaction A gas generator, a gas outlet connected to the reactive gas generator, the gas outlet is connected to the vent hole on the casing of the gas spray assembly through a vent pipe, and the gas spray assembly is fixed on a silicon wafer etching machine, to be processed The silicon wafer is driven by the conveying device of the silicon wafer etching machine to pass between the spray plate device and the exhaust device of the gas spray assembly.

The beneficial effect of the utility model is that the gas spray assembly of the silicon chip surface gas passivation device of the photovoltaic cell adopts a three-stage gas uniform flow, which can ensure the uniformity of the gas between the silicon chips and in the chip; The design is convenient to adjust according to the specific conditions of the etching machine in actual application, and improves its application adaptability; in addition, through the height-adjustable baffle design, it avoids the interference of external gas on the reaction gas and thus affects the passivation of silicon wafers. quality. The gas spray assembly and the passivation equipment of the utility model can greatly improve the passivation effect of the silicon chip, improve the yield rate of the silicon chip processing, and save the production cost.

Description of drawings

The foregoing and other objects, features and advantages of the present invention will become apparent from the following detailed description in conjunction with the accompanying drawings. in:

Fig. 1 shows the structural representation of the spray plate of the photovoltaic cell silicon chip surface passivation gas spray assembly of an embodiment of the present utility model;

Fig. 2 is a schematic structural view of an exhaust device of a photovoltaic cell silicon wafer surface passivation gas spray assembly according to an embodiment of the present invention;

The front view of an embodiment of the ventilation device of Fig. 2 shown in Fig. 2A;

The front view of another embodiment of the ventilation device of Fig. 2 shown in Fig. 2B;

Figure 3 is a schematic diagram of the overall structure of the gas leveling plate assembly of the photovoltaic cell silicon wafer surface passivation gas spray assembly of Figure 1;

Fig. 4 shows the front view of the even flow plate of Fig. 3;

Figure 4A is a schematic cross-sectional view of Figure 4;

Figure 4B shows the right side view of Figure 4;

Fig. 5 shows the structural representation of the first-level flow uniform plate;

Fig. 6 shows the schematic diagram of the structure of the two-pole uniform flow plate;

Figure 6A is a schematic cross-sectional view of Figure 6;

Fig. 7 shows the structural representation of the three-stage uniform flow plate;

FIG. 7A is a schematic cross-sectional view of FIG. 7;

Figure 7B shows the right side view of Figure 7;

FIG. 8 is a schematic view showing the structure of a gas passivation device on the surface of a photovoltaic cell silicon wafer according to an embodiment of the present invention.

detailed description

Referring to the schematic diagram of the equipment structure of the photovoltaic cell silicon wafer surface passivation gas spray assembly shown in Figure 1 according to an embodiment of the present invention, the spray assembly includes a spray plate device 10 and an exhaust device 20 placed below it (As shown in Figure 2), the spray plate device includes a housing 101, on which a vent hole 102 is provided, a gas uniform flow plate assembly 30 (see Figure 2) that is arranged inside the housing and connected with the housing, The fixing plate 104 and the baffle plate 120 are arranged on the side of the casing 101 , the casing 101 and the gas flow plate assembly 30 are fixed by screws 133 and a bolt 131 for adjusting the height of the gas flow plate assembly is provided. The gas shower assembly is fixed on the silicon wafer etching machine through the fixing parts 1040 at both ends of the fixing plate 104 during use. In some applications, for example, when there are many silicon wafer passes, that is, when the length direction of the spray assembly is relatively large, in order to ensure the rigidity of the spray assembly and avoid the bending deformation of the middle part due to the difference between the gas spray distance and There are differences in the edge parts that make the surface treatment of the silicon wafers different. The fixed plate 104 adopts an integral design; The size is relatively small, in order to save the use of raw materials, the fixing plate 104 can adopt a split design, and it is only necessary to install fixing plates with fixing parts 1040 on both ends of the spray assembly.

As shown in FIG. 3 and FIG. 4 , FIG. 4A , and FIG. 4B , the gas uniform flow plate assembly 30 includes a primary flow uniform plate 31 , a secondary flow uniform plate 32 and a tertiary flow uniform plate 33 . In a preferred embodiment, the said flow plate is a flow plate of polyvinyl chloride (PVC) material, and the hardness of the flow plate of this material is high, which is much higher than that of common polypropylene (PP) material. Bonding process is adopted between the first-level flow plate 31 and the second-level flow plate 32 and between the second-level flow plate 32 and the third-level flow plate 33. No welding is required and no thermal stress is required to ensure the flatness of the spray plate.

As shown in Figures 2 and 2A, the air exhaust device 20 of an embodiment of the present invention is placed directly below the spray plate device 10, and the silicon wafers to be processed walk between the spray plate device 10 and the air exhaust device 20. However, the air exhaust device 20 is in the shape of a box, the edge of the upper cover plate 201 of the box body is provided with an air exhaust groove 205, and the cover plates on the left and right sides of the box body are provided with a plurality of air exhaust holes 203, and the front side of the box body Or the rear side cover is provided with an air outlet 202 connected to the exhaust device; the reaction gas ejected from the shower plate device 10 is sucked away by the exhaust device 20 below it to avoid gas leakage after treating the surface of the silicon wafer. In order to achieve a better ventilation effect, in another preferred embodiment, as shown in FIG. 2B , a plurality of small ventilation holes 204 are provided on the edge of the box upper cover 201 of the ventilation device 20 .

As shown in Fig. 4A and Fig. 4B, the length and the width of the first-stage uniform flow plate 31 are smaller than the second-stage uniform flow plate 32 and the third-stage uniform flow plate 33, and the second-stage uniform flow plate 32 and the third-stage uniform flow plate 33 has the same overall width and length. The size of the specific gas uniform flow plate assembly 30 can be designed corresponding to the size of the etching machine. For example, corresponding to a 5-channel etching machine, the size of the uniform flow plate can be 850-940mm long and 50-500mm wide; each level of uniform flow plate The thickness is the same, and the thickness value is between 8 and 30mm.

In order to improve the suitability of the spray assembly in different process lines, the height of the gas uniform flow plate assembly of the utility model can be adjusted by adjusting the bolt 131, so that it is convenient for the spray assembly to be used according to the actual etching machine conditions during actual process application. Make adjustments to get the best processing effect. Therefore, in the design of this utility model, as shown in Figure 1, in the connectors at both ends of the housing, two screws 133 on the outside are connected to the internal gas uniform flow plate assembly 30 for fixing the uniform flow plate, and the middle two bolts 131 is used for adjusting the height of the even flow plate. When the uniform flow plate needs to be raised, turn the two outer screws up n turns, and the middle bolt also turn up n turns, and the method of lowering the height is reversed. The baffles 120 on both sides of the casing are used to block the external gas to prevent it from interfering with the passivation treatment gas of the jet flow and affect the passivation effect. The baffle 120 is provided with an oval screw slot 121, which is adjusted corresponding to the adjustment of the height of the uniform flow plate.

The gas uniform flow plate assembly 30 adopts three-stage uniform flow, so as to ensure uniform air flow between each channel and in the sheet. Specifically, please refer to Fig. 5 first, which is a schematic structural view of the first-level uniform flow plate 31, which includes a hollowed out part 313, a blind hole air groove 311, and a symmetrically arranged air hole 302 arranged in the middle of the air groove 311. The air hole 302 communicates with the air hole 102 on the casing 101 , and the air grooves are designed symmetrically up and down, left and right, and communicate with each other.

6 and the schematic diagram of the structure of the secondary uniform flow plate 32 shown in FIG. The screw fixing holes 323 between the ventilation parts of the blind holes, and the ventilation holes 322 communicate with the air grooves 311 of the first-stage uniform flow plate. Preferably, the blind hole ventilation parts are in a rectangular configuration and are evenly arranged.

Referring to Fig. 7 and Fig. 7A, Fig. 7B shown in Fig. 7A, the schematic diagram of the structure of the three-stage uniform flow plate 33, it is a concave thin plate-shaped design, on which a plurality of micro ventilation holes 331 and screw fixing columns 333 are evenly distributed, and the micro vent holes 331 are evenly distributed. The ventilation hole 331 is in communication with the ventilation part 321 of the secondary uniform flow plate. The diameter of the micro-ventilation hole 331 is 0.3-1.5 mm, and in a preferred embodiment, the diameter of the micro-ventilation hole is 0.4-0.8 mm.

The gas uniform flow plate assembly of this embodiment adopts three-stage uniform flow, and the gas is sprayed to the surface of the silicon wafer after passing through the slender air slots, multiple block-shaped ventilation parts, and countless micro-ventilation holes evenly arranged on the entire surface. The passivation treatment process can ensure the uniformity of the processing gas between the silicon wafers and the uniformity of the wafer, so that different silicon wafer surfaces and all parts of the same silicon wafer surface can get the same process conditions as much as possible, and improve the silicon performance. The passivation effect of the sheet.

In the above-mentioned embodiments of the present utility model, all vent holes can be processed by CNC, or by processing equipment such as engraving machines. The shell, flow plate, baffle and exhaust device can be made of PVC material, or polypropylene, chlorinated polyvinyl chloride (CPVC), polyvinylidene fluoride (PVDF), perfluoroalkoxy resin (PFA), Polytetrafluoroethylene (PTFE), aluminum alloy or stainless steel; the equalizer plates can be fixed to each other by bonding or welding.

According to another purpose of the present utility model, see FIG. 8 for a schematic diagram of the structure of a gas passivation device on the surface of a photovoltaic cell silicon wafer according to an embodiment of the present invention, the passivation device includes the above-mentioned gas spray assembly and Control box 100, described control box comprises control panel 110, reaction gas generator (not shown), and the gas outlet hole 120 that is connected with reaction gas generator, and described gas outlet hole 120 is sprayed through vent pipe 200 and gas spray assembly. The vent hole 102 on the housing 101 of the shower plate device 10 is connected, and the gas shower assembly is fixed on the silicon wafer etching machine through the fixing parts 1040 at both ends of the fixing plate 104 .

The gas spray assembly of the gas passivation equipment on the silicon wafer surface of the photovoltaic cell of the utility model adopts a three-stage gas uniform flow, which can ensure the uniformity of the gas between the silicon wafers and in the wafer; the height-adjustable design is convenient for practical application. It is adjusted according to the specific conditions of the etching machine to improve its application adaptability; in addition, through the height-adjustable baffle design, it avoids the interference of external gas on the reaction gas and thus affects the quality of passivation of silicon wafers. The gas spray assembly and the passivation equipment of the utility model can greatly improve the passivation effect of the silicon chip, improve the yield rate of the silicon chip processing, and save the production cost.

The utility model is not limited to the described embodiments, those skilled in the art can still make some amendments or changes without departing from the spirit of the utility model, that is, within the scope of disclosure, so the scope of protection of the utility model is defined in the claims The scope of the book shall prevail.

Claims (10)

1. a photovoltaic cell silicon wafer surface passivation gas shower assembly, it is characterised in that described Gas shower assembly includes shower plate device and the extractor fan being arranged below, described shower plate Device includes housing, which is provided with the passage being connected with reacting gas generator, is arranged on shell Internal portion and the gas even flow plate assembly being connected with housing, be arranged on housing side fixed plate and Baffle plate, described housing and gas even flow plate assembly are screwed and are provided with gas even flow plate The bolt of component height regulation；Described extractor fan is placed in the underface of shower plate, pending Silicon chip is passed by between shower plate device and extractor fan, and described extractor fan is box body shape, box The edge part of the upper cover plate of body is provided with convulsion groove, and box body left and right sides cover plate is provided with multiple convulsion Aperture, front side or the rear side cover plate of box body are provided with the gas outlet being connected with air exhauster；From spray Plate ejection reacting gas silicon chip surface is processed after by extractor fan below siphon away with Gas is avoided to leak.

2. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 1, its Be characterised by, described gas even flow plate assembly include one-level even flow plate, two grades of even flow plates and Three grades of even flow plates, between one-level even flow plate and two grades of even flow plates and two grades of even flow plates and three grades even The mode of bonding or welding is used to fix between stream plate.

3. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 2, its Being characterised by, the length and width of described one-level even flow plate is respectively less than two grades of even flow plates and three grades The length and width of even flow plate, the width of two grades of even flow plates and three grades of even flow plates is identical with length.

4. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 1 or 2, It is characterized in that, described baffle plate is provided with the oval elongated hole of controllable register height.

5. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 1 or 2, It is characterized in that, described one-level even flow plate includes openwork part, blind hole wind groove and being arranged on Symmetrically arranged passage in the middle part of wind groove, described passage communicates with the passage on housing.

6. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 5, its Being characterised by, two grades of described even flow plates include multiple rectangular setting and the blind hole of uniformly arrangement Ventilation unit, is arranged on the passage in the middle of blind hole ventilation unit and is arranged on two grades of even flow plate both sides And the wind groove of the screw fixing hole between blind hole ventilation unit, described passage and one-level even flow plate Communicate.

7. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 6, its Being characterised by, it is little that the edge part of the box body upper cover plate of described extractor fan is additionally provided with multiple convulsion Hole.

8. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 6, its Being characterised by, three grades of described even flow plates are that spill is lamellar, it are evenly distributed with multiple micro- Post fixed by passage and screw, and the ventilating part of described micro-passage and two grades of even flow plates communicates.

9. photovoltaic cell silicon wafer surface passivation gas shower assembly as claimed in claim 1, its Being characterised by, the material of described shell, even flow plate, baffle plate and extractor fan includes polypropylene, Polrvinyl chloride, chliorinated polyvinyl chloride, Kynoar, perfluoroalkoxy resin, polytetrafluoroethyl-ne Alkene, aluminium alloy or stainless steel material.

10. a photovoltaic cell silicon wafer surface gas paralysis facility, described paralysis facility include as Gas shower assembly described in any one of claim 1-9 and control chamber, described control chamber includes The gas outlet that control panel, reacting gas generator are connected with reacting gas generator, described Gas outlet is connected with the passage on gas shower assembly housing by breather, described gas Spray assemblies is fixed on silicon chip erosion machine by described fixed plate, and pending silicon chip is by silicon chip The transporter of etching machine drives between shower plate device and the extractor fan of gas shower assembly Pass by.