CN105845741A - Resonant tunneling diode based on InGaAs/AlAs material - Google Patents
Resonant tunneling diode based on InGaAs/AlAs material Download PDFInfo
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- CN105845741A CN105845741A CN201510014328.3A CN201510014328A CN105845741A CN 105845741 A CN105845741 A CN 105845741A CN 201510014328 A CN201510014328 A CN 201510014328A CN 105845741 A CN105845741 A CN 105845741A
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Abstract
The invention relates to the technical field of diodes, especially a resonant tunneling diode based on an InGaAs/AlAs material. An In0.53AlxGa0.47-xAs/InP composite current collection structure is employed in a composite current collection region, thereby reducing the transit time of electrons in the diode, and improving the working speed. Strain InxGal-xAs is employed as a potential well material, and the In0.53AlyGa0.47-yAs serves as a transmission layer, thereby reducing the start voltage and the peak voltage. Non-doped InAlGaAs and InGaAs layers are respectively deposited between the transmission layer and a first barrier layer, and between the composite current collection region and a second barrier layer, and an isolation region is formed, thereby preventing foreign matters in a heavily-doped region from diffusing towards a DBS region. The diode can be applied to a high-speed digital circuit, a high-frequency oscillation device and the assembly of a high-quality display more effectively.
Description
Technical field
The present invention relates to nano-device technical field, particularly a kind of based on resonance tunnel-through diode.
Background technology
According to Moore's Law, constantly reduce device feature size with the silica-based electronic technology as representative, face
The physics limit of device, technological limits and the device architecture limit.Under these maximum conditions, with quantum tunneling
Nano electron device based on effect arises at the historic moment.Wherein, resonance tunnel-through diode has the differential of uniqueness
Negative resistance phenomenon, thus have the spy that fast response time, operating frequency high-low voltage, low-power consumption etc. attract people's attention
Point, particularly when realizing equal function, required device number is greatly lowered, and is conducive to reducing chip face
Long-pending so that it has broad application prospects at the aspect such as high frequency generator and high-speed digital circuit.Additionally,
Along with metal organic chemical compound vapor deposition and film growth techniques that molecular beam epitaxy is representative and electron beam light
Developing rapidly of the Technologies such as quarter, the preparation of nano electron device and fabrication and processing technique are the most ripe.
Therefore resonance tunnel-through diode becomes one of the most potential nano electron device.
In recent years, many research institutions and electronics corporation throw in terms of the research of resonance tunnel-through diode in the world
Having entered a lot of energy, obtained developing rapidly, but still suffered from frequency and be not high enough to, output is relatively low
Etc. problem.Additionally, domestic resonance tunnel-through diode device correlational study is also being carried out, but also have very with external
Big gap, the performance being primarily due to single RTD element is the lowest, causes integral device performance gap
It is relatively big, so the structure design of resonance tunnel-through diode also needs to constantly optimize.
At present, resonance tunnel-through diode has multiple material system, such as GeSi/Si material, InAlN/GaN material
Material etc..But, compared to InGaAs/AlAs material, the electronics of Ge/Si and InAlN/GaN material system
Mobility and saturated velocity are the least, can only make frequency or the relatively low resonance tunnel-through diode of operating rate.
The In matched with InP substrate latticexGa1-xAs (wherein x=0.53) material electronics mobility is up to 13800
cm2/ V s, considerably beyond GaN (440cm2/ V s) and Si (1400cm2/ V s) material, so with InP being
Substrate can design work speed and the highest high-performance resonance tunnel-through of frequency based on InGaAs/AlAs material
Diode.
Summary of the invention
For overcoming the deficiencies in the prior art, it is achieved high frequency and the nano electron device of operating rate, this
Invention proposes a kind of resonance tunnel-through diode based on InGaAs/AlAs material, and its structure is the most successively
Including: cell contacts, emission layer, the first isolation at the bottom of InP substrate layer, InGaAs cushion, InGaAs
Layer, AlAs the first barrier layer, potential well layer, AlAs the second barrier layer, InGaAs the second sealing coat, compound
Collecting zone, table top contact electrode layer, collecting region contact electrode layer；Described collecting region contact electrode layer surface sets
Passivation layer, described passivation layer is had to extend into cell contacts surface, the described end；Cell contacts surface, the described end
It is provided with emission layer contact electrode layer；The table top electrode that described passivation layer surface is provided with contacts electricity with described collecting region
Pole layer connects；Cell contacts surface, the described end is provided with emission layer contact electrode layer, is arranged at described InP substrate
The underlayer electrode on layer surface contacts electrode layer and connects with described emission layer；
Wherein, if described composite collector the most also includes dried layer In0.53AlxGa0.47-xAs hierarchical layer, 0.05
≤x≤0.3；Described In0.53AlxGa0.47-xAs hierarchical layer x from bottom to top is gradually increased 0.05～0.1 successively.
Further, described composite collector includes four hierarchical layer from bottom to top, is respectively as follows:
In0.53Alx1Ga0.47-x1As sublayer, In0.53Alx2Ga0.47-x2As sublayer, In0.53Alx3Ga0.47-x3As sublayer, InP
Sublayer；Wherein, described x1, x2, x3 are followed successively by 0.05≤x1≤0.1,0.1≤x2≤0.2,0.15≤x3
≤0.3；
Further, the thickness of described InP sublayer is 10～25nm；In0.53Alx1Ga0.47-x1As sublayer,
In0.53Alx2Ga0.47-x2As sublayer, In0.53Alx3Ga0.47-x3The thickness of As sublayer is 2～4nm.
Further, the thickness of described first barrier layer is not more than the thickness of described second barrier layer.
Further, the material of described potential well layer is InyGa1-yAs, wherein 0.53≤y≤1.
Further, the material of emission layer is In0.53AlmGa0.47-mAs, wherein 0≤m≤0.15；Described first
The material of sealing coat is In0.53AlpGa0.47-pAs, p=m.
Further, the material of described table top contact electrode layer is InnGa1-nAs, n=0.7
Beneficial effect:
The present invention uses In at composite collector0.53AlxGa0.47-xAs/InP is combined current collecting, can reduce electricity
Son, in the transition time within diode, improves operating rate；Use strain InyGa1-yAs(0.53≤x≤1)
For potential well material, starting voltage and crest voltage can be reduced；Respectively at emission layer and the first barrier layer, multiple
Close and between collecting zone and the second barrier layer, deposit undoped p InGaAs layer, form isolation area, can stop heavily doped
The impurity in miscellaneous district spreads to DBS district, forms sub-potential well at emission layer simultaneously, is become by 3D-2D resonance tunnel-through
2D-2D resonance tunnel-through, increases pv curren ratio, improves operating frequency with this；Contact electrode layer uses N-shaped
Heavy doping InGaAs, and use high In component, low resistance Ohmic contact can be formed.The useful effect of the present invention
Fruit is at room temperature it is observed that obvious differential negative resistance phenomenon, obtains the resonance of extremely high frequency and operating rate
Tunnel-through diode, can be more effectively applied to the field such as high-speed digital circuit and higher-order of oscillation wave device.
Accompanying drawing explanation
Fig. 1 is the resonance tunnel-through diode mesa structure schematic diagram of embodiment of the present invention InGaAs/AlAs.
Fig. 2 be embodiment of the present invention InGaAs/AlAs resonance tunnel-through diode in emission layer hierarchical layer knot
Structure schematic diagram.
Fig. 3 is the resonance tunnel-through diode of the embodiment of the present invention InGaAs/AlAs conduction band when applying bias
Energy level schematic diagram.
Fig. 4 is the current-voltage correlation curve of the resonance tunnel-through diode of embodiment of the present invention InGaAs/AlAs
Schematic diagram.
Detailed description of the invention
The present invention in order to realize the nano electron device of high frequency and operating rate, propose a kind of based on
The resonance tunnel-through diode of InGaAs/AlAs material, uses N-shaped InP to do substrate；With heavy doping InGaAs
Form emission layer and collecting region；With strain InGaAs layer as SQW, AlAs does potential barrier, forms double potential barrier
Unipotential well structure (DBS)；The mesa structure formed with N-shaped heavy doping high In ingredient InGaAs, and respectively
Substrate and table top are formed Au/Pi/Ti metal electrode.
Below in conjunction with accompanying drawing, technical scheme is further described.
Fig. 1 show resonance tunnel-through diode mesa structure schematic diagram based on InGaAs/AlAs.
This resonance tunnel-through diode based on InGaAs/AlAs, includes the most successively:
InP substrate layer 1；
Thickness is that the undoped p InGaAs layer of 200nm is as InGaAs cushion 2；
Thickness is about the InGaAs layer of 400nm as end cell contacts 3；
Thickness is about 20nm, Si doping content more than 1.0 × 1018cm-3In0.53AlxGa0.47-xAs layer is as transmitting
Layer 4.Emission layer uses and is slightly above In with InP substrate Lattice Matching and conduction level0.53Ga0.47As's
In0.53AlmGa0.47-mAs, wherein 0≤m≤0.15 (being preferably m=0.11 in the present embodiment).
Thickness is about eigen I n of 2nm0.53AlpGa0.47-pAs (p=m, preferably p=0.11) layer as first every
Absciss layer 5.Wherein, the material of the first sealing coat is consistent with emission layer material component, and simply emission layer is attached most importance to
Doping, and the first sealing coat undoped p.
Thickness is that the intrinsic AlAs layer of 1.0～1.4nm is as the first barrier layer 6；
Thickness is the strain In of 4nmyGa1-yAs layer (preferred y=0.8 in 0.53≤y≤1, this enforcement) conduct
InGaAs potential well layer 7；
Thickness is that the intrinsic AlAs layer of 1.2nm is as the second barrier layer 8；Wherein, the thickness of the first barrier layer 6
Degree is conducive to improving pv curren ratio less than or equal to the thickness of the second barrier layer.
Thickness is that the eigen I nGaAs layer of 2nm is as the second sealing coat 9.
Thickness is 25nm composite collector 10, and described composite collector uses intrinsic material.
Wherein, shown in Fig. 2, described composite collector 10 includes four layers of In from bottom to top0.53AlxGa0.47-xAs
Hierarchical layer, is respectively as follows: In0.53Alx1Ga0.47-x1As sublayer 101, In0.53Alx2Ga0.47-x2As sublayer 102,
In0.53Alx3Ga0.47-x3As sublayer 103, InP sublayer 104；Wherein, described x1, x2, x3 are followed successively by 0.05
≤ x1≤0.1,0.1≤x2≤0.2,0.15≤x3≤0.3；In the present embodiment, the numerical value of x1, x2, x3
It is particularly preferred as: 0.1,0.2,0.3.The thickness of described InP sublayer 104 is 16nm；In0.53Alx1Ga0.47-x1As
Sublayer 101, In0.53Alx2Ga0.47-x2As sublayer 102, In0.53Alx3Ga0.47-x3The thickness of As sublayer 103 is
3nm。
The described resonance tunnel-through diode of the present embodiment uses heavy doping In at emission layer 40.53AlxGa0.47-xAs material
Material scalable conduction level structure, reduces cut-in voltage and the crest voltage of diode.At composite collector 10
The InAlGaAs/InP using different Al component forms compound current collecting, can reduce the transition time of electronics.
Further, respectively at emission layer and the first barrier layer, undoped p between composite collector and the second barrier layer, is deposited
InAlGaAs and InGaAs, forms isolation area, prevents impurity from building well structure from collecting region to double potential barrier unipotential
(DBS) district's diffusion.
It is more than 1.0 × 10 that continued growth thickness is about 10nm, Si doping content19cm-3High In ingredient
InnGa1-nAs layer (n is preferably 0.7) is as table top contact electrode layer 11, in order to make table top contact conductor,
Advantageously form the Ohmic contact of low-resistivity；
And, the collecting region contact electrode layer 12 that AuPbTi material is made；Described collecting region contact electrode layer 12
Surface is provided with passivation layer 13 and extends into cell contacts of the described end 3 surface；Described passivation layer 13 surface sets
Some table top electrodes 14 contact electrode layer 12 with described collecting region and connect；Cell contacts 3 surface, the described end
It is provided with emission layer contact electrode layer 15；It is arranged at the underlayer electrode 16 on described InP substrate layer 1 surface with described
Emission layer contact electrode layer 15 connects.
The resonance diode of the present invention can use metal organic chemical compound vapor deposition or molecular beam epitaxial method system
Standby.The resonance tunnel-through diode preparation process of the InGaAs/AlAs of the present embodiment is described below, including as follows
Step:
1. in the N-shaped InP substrate cleaned and dry, deposit 2～10 layer membrane materials；
2. evaporation or sputtering AuPbTi metal contact electrode layer as collecting region；
3. make protective layer with AuPbTi metal level, go out transmitting aspect with wet etching；
4. evaporation or sputtering AuPbTi metal contact electrode layer as emission layer；
5. corrode big table top, and deposit with plasma chemical vapor deposition (PECVD) method such as Fig. 1
SiO2Passivation layer；
6. lithography fair lead, evaporates TiPtAu, photoetching, corrodes and table top electrode and underlayer electrode, and alloy
Change.
Fig. 3 is the conduction level schematic diagram of described resonance tunnel-through diode when being applying bias.From the figure 3, it may be seen that
Owing to AlAs is bigger than the energy gap of InGaAs material, so AlAs does barrier layer, strain InGaAs does
Potential well layer, 5～7 layers constitute double potential barrier unipotential well structure (DBS).According to quantum-mechanical theory, quantum well
Discrete energy levels can be formed in Ceng；Potential well layer is nanoscale, close to the de Broglie wavelength magnitude of electronics, permissible
There is quantum tunneling effect.Emission layer is due to for heavy doping, fermi level EfHigher than conduction level Ec, to carry
Power supply component.In conjunction with shown in Fig. 4, under external bias V, conduction level is downward-sloping, when increasing to
Cut-in voltage VTTime, potential well ground state level E0(according to quantum mechanics, one dimensional well self-energy is quantum
Changing, form discrete, discontinuous bound level, wherein lowest energy level is ground state level, is designated as E0)
With emission layer fermi level EfWhen flushing, emission layer electronics starts tunnelling and enters potential well area；Along with V increases,
Tunnelling current I increases.To reaching crest voltage VpTime, E0With emission layer conduction level EcWhen flushing, tunnelling
Electric current reaches maximum.Continuing to increase bias voltage, emission layer electronics cannot occur tunnelling, and electric current drastically subtracts
Little.Valley point current is mostly derived from the electric current component of excess carriers, and it increases with bias voltage V and increases.
When V increases to valley point voltage VvTime, resonance tunnel-through diode total current is valley point current.Described resonance tunnel-through
The current-voltage correlation figure of diode is as shown in Figure 4.Described diode is based on quantum tunneling effect, tunnelling
Effect is the ratio physical effect faster such as diffusion, drift, and determining resonance tunnel-through diode has the highest frequency
Rate and operating rate.
Further, for realizing high frequency and operating rate, thus it is possible to vary emission layer Si element doping concentration
With collecting region and the thickness of sealing coat, when implementing, the present invention is not restricted；In order to adapt to processing technology
Requirement, table top electrode and underlayer electrode can select the alloy materials such as AuGeNi or CrAu, passivation layer
Si or Si can be used3N4Deng insulant, when implementing, the present invention is not restricted.
Claims (6)
1. a resonance tunnel-through diode based on InGaAs/AlAs, it is characterised in that the most successively
Including: cell contacts, emission layer, the first isolation at the bottom of InP substrate layer, InGaAs cushion, InGaAs
Layer, AlAs the first barrier layer, potential well layer, AlAs the second barrier layer, InGaAs the second sealing coat, compound
Collecting zone, table top contact electrode layer, collecting region contact electrode layer；Described collecting region contact electrode layer surface sets
Passivation layer, described passivation layer is had to extend into cell contacts surface, the described end；Cell contacts surface, the described end
It is provided with emission layer contact electrode layer；The table top electrode that described passivation layer surface is provided with contacts electricity with described collecting region
Pole layer connects；Cell contacts surface, the described end is provided with emission layer contact electrode layer, is arranged at described InP substrate
The underlayer electrode on layer surface contacts electrode layer and connects with described emission layer；
Wherein, if described composite collector the most also includes dried layer In0.53AlxGa0.47-xAs hierarchical layer,
0.05≤x≤0.3；Described In0.53AlxGa0.47-xAs hierarchical layer x from bottom to top is gradually increased 0.05～0.1 successively；
Resonance tunnel-through diode the most according to claim 1, it is characterised in that described composite collector is certainly
Under supreme include four hierarchical layer, be respectively as follows: In0.53Alx1Ga0.47-x1As sublayer, In0.53Alx2Ga0.47-x2As
Layer, In0.53Alx3Ga0.47-x3As sublayer, InP sublayer；Wherein, described x1, x2, x3 be followed successively by 0.05≤
X1≤0.1,0.1≤x2≤0.2,0.15≤x3≤0.3；
The thickness of described InP sublayer is 10～25nm；In0.53Alx1Ga0.47-x1As sublayer,
In0.53Alx2Ga0.47-x2As sublayer, In0.53Alx3Ga0.47-x3The thickness of As sublayer is 2～4nm.
Resonance tunnel-through diode the most according to claim 1 or claim 2, it is characterised in that described emission layer
Material is In0.53AlmGa0.47-mAs, wherein 0≤m≤0.15；The material of described first sealing coat is
In0.53AlpGa0.47-pAs, p=m.
Resonance tunnel-through diode the most according to claim 1 or claim 2, it is characterised in that described first potential barrier
The thickness of layer is not more than the thickness of described second barrier layer.
Resonance tunnel-through diode the most according to claim 1 or claim 2, it is characterised in that described potential well layer
Material is InyGa1-yAs, wherein 0.53≤y≤1.
Resonance tunnel-through diode the most according to claim 1 or claim 2, it is characterised in that described table top electrode
The material of contact layer is InnGa1-nAs, n=0.7.
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Cited By (2)
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| CN106298978A (en) * | 2016-10-08 | 2017-01-04 | 天津大学 | Imbalance feeding slot antenna RTO Terahertz wave source and processing technology |
| CN110085682A (en) * | 2019-05-05 | 2019-08-02 | 西安电子科技大学 | A kind of resonance tunnel-through diode and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298978A (en) * | 2016-10-08 | 2017-01-04 | 天津大学 | Imbalance feeding slot antenna RTO Terahertz wave source and processing technology |
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| CN110085682A (en) * | 2019-05-05 | 2019-08-02 | 西安电子科技大学 | A kind of resonance tunnel-through diode and preparation method thereof |
| CN110085682B (en) * | 2019-05-05 | 2021-05-07 | 西安电子科技大学 | Resonant tunneling diode and manufacturing method thereof |
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