CN105839058A - Plating method for diamond like carbon film on surface of zinc sulfide matrix and zinc sulfide plate comprising diamond like carbon film - Google Patents
Plating method for diamond like carbon film on surface of zinc sulfide matrix and zinc sulfide plate comprising diamond like carbon film Download PDFInfo
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- CN105839058A CN105839058A CN201610204682.7A CN201610204682A CN105839058A CN 105839058 A CN105839058 A CN 105839058A CN 201610204682 A CN201610204682 A CN 201610204682A CN 105839058 A CN105839058 A CN 105839058A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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Abstract
The invention discloses a plating method for a diamond like carbon film on the surface of a zinc sulfide matrix and a zinc sulfide plate comprising the diamond like carbon film. The area of the zinc sulfide matrix is larger than or equal to 50 cm<2>. The plating method comprises the following step that 1, impurities on the surface of the zinc sulfide matrix are removed; 2, a transition layer is plated on the surface of the zinc sulfide matrix with the surface impurities removed, the transition layer is a Ge film, and the thickness is 60-80 nm; and 3, the diamond like carbon film is plated on the surface of the Ge film, specifically, the surface of the zinc sulfide plate is divided into zones with the area being 1-25 cm<2>, the zones are subjected to diamond like carbon film plating, and the thickness of the diamond like carbon film is 0.1-2[mu]m. The diamond like carbon film plated and prepared through the plating method is good in anti-disengagement performance.
Description
Technical field
The present invention relates to infra-red material surfacecti proteon field, be specifically related to a kind of zinc sulfide-based body surface
The method of face plating diamond film and there is the sulfuration zine plate of diamond-film-like.
Background technology
Infrared technique all has very important status in many fields such as contemporary weaponrys, and
Infrared window and head-shield are the critical components in infrared technique system.Zinc sulfide (ZnS) because of its
Infrared medium wave 3～5um and long wave 8～12um wave band transmitance are the highest, mature preparation process,
The processing request of various sizes optical dome can be met, be presently the most preferable infrared window
And hood material.But infrared technique is not limited only to higher infrared transmittivity to the requirement of material,
Thermal imaging system to be protected resists the erosion of rainwater, dust and hail etc. in high-speed flight,
And the mechanical strength of ZnS material, case hardness and resistance to weathering performance are not ideal enough, limit ZnS
Material is in the application in infrared technique field.
Diamond like carbon film (DLC) film hardness is high, friction resistant wear resistance is strong, has simultaneously
Good optical transmission (at ultraviolet, whole infrared band), chemical inertness, the spy such as anticorrosive
Property, be widely applied to material of infrared window surface, serve preferable surfacecti proteon and
Anti-reflection effect.
DLC film was ground as the existing scientific research personnel of surfacecti proteon film of material of infrared window
Study carefully.Patent application " a kind of DLC infrared antireflective protecting film and preparation method thereof ", (application number
200810045240.8) use non-balance magnetically controlled sputter method, with graphite as target, be passed through hydrocarbon and
Argon mixed gas, is coated with, at ZnSe matrix surface, the DLC film that double-deck refractive index is different, with
Time play protection and anti-reflection effect.Patent application " newly should of diamond-like thin film as optical anti-reflection film
With " (application number 92108354.8) use high-frequency plasma vapour deposition process at HgCdTe material
It is coated with DLC film on material, makes the mean transmissivity of 8～12 mu m wavebands improve 16%.But all
Fail to solve large scale >=50cm2The zinc sulfide plate surface caducous problem of DLC protecting film.
Research finds: sp in DLC3Content is the highest, and hardness is the biggest, and wear Characteristics is the best,
But stress also can be the biggest, and film is the most easy to fall off simultaneously.At present, to use in zinc sulfide-based surface
PECVD plating DLC film, is only coated with sp3Content is relatively low, the DLC film ability that stress is less
Can guarantee that thin film does not comes off, but the wear Characteristics of the DLC film of soft is poor.Greatly
Size sulfuration zine plate (area >=50cm2) to be coated with high rigidity DLC film difficulty the biggest on surface.Because
Matrix size is the biggest, and membrane stress distributing homogeneity is the poorest, is more easily caused demoulding.
Summary of the invention
The method that the invention provides a kind of zinc sulfide-based surface plating diamond film, this
Bright method combines with the method for piecemeal plated film by plating transition zone on zinc sulfide matrix, it is ensured that
The surface stress of DLC film is uniform, can effectively prevent coming off of DLC film.
Present invention also offers a kind of sulfuration zine plate with diamond-film-like.
On the one hand, the invention provides the side of a kind of zinc sulfide-based surface plating diamond film
Method, the area >=50cm of described zinc sulfide matrix2, it is characterised in that comprise the steps:
(1) described zinc sulfide-based surface impurity is removed；
(2) plating of the zinc sulfide-based surface described in surface impurity transition zone is being removed, described
Transition zone is Ge film, and thickness is 60-80nm；
(3) at described Ge film plated surface diamond-film-like: by described zinc sulfide-based body surface
It is 1-25cm that face is divided into area2Region carry out coating diamond-like film, described diamond like carbon respectively
The thickness of film is 0.1-2 μm.
Further, described step (1) specifically includes following steps:
With the zinc sulfide matrix described in the absorbent cotton wiping with petroleum ether and alcohol blend, so
Rear cleaning, is dried.
Further, described step (2) specifically includes following steps:
E-beam evaporation is used to plate institute at the described zinc sulfide plate surface removing surface impurity
The Ge film stated, design parameter is: 80-120 DEG C of baking 30-60min, argon impressed current anode
290-310V, 0.9-1.1A.
Further, described step (3) specifically includes following steps:
Described zinc sulfide plate surface is divided into alternately arranged the first bar-shaped zone and second
Bar-shaped zone, the area of the first described bar-shaped zone is 1-25cm2, described second area
Area is 1-25cm2, first coating diamond-like film on described first area, the most again described
Second area coating diamond-like film.
Further, described first coating diamond-like film on described first area, the most again
Following steps are specifically included at described second area coating diamond-like film:
First being pasted onto described second area with high temperature gummed tape, described high temperature is >=100 DEG C, so
After on described zinc sulfide-based surface coating diamond-like film, i.e. in the plating of described first area
Film, then, takes off described high temperature gummed tape, then is pasted onto the firstth described district with high temperature gummed tape
On territory, again described zinc sulfide-based surface is carried out coating diamond-like film, i.e. described
Plated film on second area, then takes off described high temperature gummed tape and i.e. completes zinc sulfide-based surface class
Being coated with of diamond film.
Further, described first coating diamond-like film on described first area, the most again
Following steps are specifically included at described second area coating diamond-like film:
The first grid cover consistent with described zinc sulfide-based surface profile is used to cover described sulfur
Changing Zinc Matrix surface, described first grid cover includes the metal corresponding with described second area
Screen, for blocking described second area；Then by the described described sulfur being covered with first grid cover
Changing Zinc Matrix surface and carry out coating diamond-like film, i.e. plated film on described first area, takes off institute
State first grid cover；
The second gate cover consistent with described zinc sulfide board substrate surface profile is used to cover described
Zinc sulfide-based surface, described second gate cover includes the gold corresponding with described first area
Belong to screen, for blocking described second area；Then it is covered with described described in second gate cover
Zinc sulfide-based surface carries out coating diamond-like film, and i.e. plated film on described second area, takes off
Described second gate cover i.e. completes being coated with of zinc sulfide-based surface diamond-film-like.
Further, the film plating process that described coating diamond-like film uses is plasma enhancing
Chemical vapour deposition technique, concrete operations are as follows: in air pressure≤3.0 × 10-3Under the conditions of Pa, to plated film
Room is passed through butane or methane gas, and regulation air pressure, to 2-4Pa, starts plated film, and plated film power is
100-200W, automatic bias≤400V, sedimentation time is 10-20min.
On the other hand, the present invention provides a kind of sulfuration zine plate with diamond-film-like, above-mentioned side
Method is prepared, and the described sulfuration zine plate with diamond-film-like includes zinc sulfide matrix, its
On be provided with the Ge film transition zone that thickness is 60-80nm；It is provided with class on described transition zone
Diamond film, described diamond like carbon film thickness is 0.1-2 μm；Described diamond-film-like is by face
Amass as 1-25cm2Diamond-film-like fritter be spliced.
Compared with prior art, the present patent application at least has the advantages that
The present patent application used coating (Ge film) to be possible to prevent due to zinc sulfide matrix and DLC
The DLC film that the nature difference of film causes greatly comes off.
Prior art still uses overall plated film for bigger sheet material, easily causes membrane structure
Integrated stress is uneven, thus causes coming off of DLC film, and the present patent application uses piecemeal plated film
Method, DLC film is made up of multiple fritters, thus solves asking of the Stress non-homogeneity of film
Topic, even and if having fritter film to come off also and not interfering with other parts.
Accompanying drawing explanation
Fig. 1 is in the embodiment of the method 1 of zinc sulfide-based surface of the present invention plating diamond film
The structural representation of first grid cover；
Fig. 2 is in the embodiment of the method 2 of zinc sulfide-based surface of the present invention plating diamond film
The structural representation of second gate cover.
Detailed description of the invention
For clearer elaboration present disclosure and technical scheme, below in conjunction with preferably implementing
Scheme is described in detail, it will be clear that preferred embodiment is intended merely to the most originally
Skilled person is easier to understand technical scheme, is not intended as the present invention program's
Limit.
The principle of the present patent application scheme is to prevent zinc sulfide matrix and DLC film by transition zone
Between the DLC film that causes greatly of physico-chemical property difference come off, use separation method to be coated with DLC simultaneously
Film, the DLC film being possible to prevent unbalanced stress to cause comes off.The present invention uses PECVD,
PECVD device has compared with other filming equipments that simple to operate, equipment is cheap, range
The advantage such as extensively.
Specific embodiment be presented herein below:
Embodiment 1
Step one: clean substrate
The zinc sulfide plectane of a diameter of 200mm is used before plated film and is instilled petroleum ether and alcohol blend
The careful wiped clean of absorbent cotton, ultrasonic cleaning 15min the most in acetone, use defat after taking-up
Cotton rub butt body, finally by alcohol wipe, puts into baking box and dries, stand-by.
Step 2: cross plated film and be coated with
Cleaned zinc sulfide plectane is put into plating optical anti-reflective film in electron beam evaporation deposition machine,
Ge film, as the innermost layer of anti-reflection film system, simultaneously works as the effect of transition zone, and thickness is 60nm.
Taking out zinc sulfide plectane after being coated with, being coated with parameter is: 100 DEG C of baking 40min, argon is auxiliary
Supporing yang pole 300V, 1A.
Step 3: surface segmentation
Fig. 1 is first grid cover structure schematic diagram, as it is shown in figure 1, first grid cover includes that width is
Bonding jumper 1 wide for 1-2cm, the width at interval 2 is 0.5-1cm, with on first grid cover cover first
Alum gate cover used by secondary plating DLC film, it is therefore an objective to zinc sulfide plectane is carried out subregion plated film, so
The STRESS VARIATION of DLC film layer can be reduced, prevent film from coming off, meanwhile, even if occurring that film comes off
The film layer in other regions is not interfered with yet.
Step 4: DLC plated film for the first time
PECVD vacuum film coating chamber put into by zinc sulfide plectane after segmenting.In the feelings not heated
Under condition, when air pressure≤3.0 × 10-3During Pa, it is passed through butane, adjusts stable gas pressure at 4Pa.Start
Plated film, power is 100W, plated film time 20min.
Step 5: DLC plated film for the second time
Fig. 2 is second gate cover structure schematic diagram, as in figure 2 it is shown, second gate cover includes that width is
Bonding jumper 3 wide for 0.5-1cm, the width at interval 4 is 1-2cm, and bonding jumper 3 just can cover
Lid DLC coating film area for the first time, with plating alum gate used by DLC film on first grid cover cover for the first time
Cover, it is therefore an objective to zinc sulfide plectane is carried out subregion plated film, so can reduce DLC film layer
STRESS VARIATION, prevents film from coming off, and meanwhile, does not interferes with other districts even if occurring film to come off also
The film layer in territory.
Prepared by the zinc sulfide preparation of plates method of prepared by the present embodiment have diamond-film-like
Sheet material has the DLC film that bar-shaped zone is spliced, and thickness is 0.1 μm, can reduce DLC
The STRESS VARIATION of film, effectively prevent coming off of DLC film, use the segmentation of grid cover have simple to operate,
Advantage rapidly.
Using such scheme to be coated with the plated film excessively of different-thickness, the thickness being respectively provided with transition zone is
70nm and 80nm, the sulfuration zine plate with diamond-film-like to the transition tunic of different-thickness
Material internal stress is measured, the internal stress that 60nm, 70nm are corresponding with 80nm be respectively 1.6GPa,
1.3GPa and 0.9GPa, illustrates to be continuously increased along with the increase internal stress of thickness.
Embodiment 2:
Step one: clean substrate
The zinc sulfide plectane of a diameter of 250mm is used before plated film and is instilled petroleum ether and alcohol blend
The careful wiped clean of absorbent cotton, ultrasonic cleaning 15min the most in acetone, use defat after taking-up
Cotton rub butt body, finally by alcohol wipe, puts into baking box and dries, stand-by.
Step 2: transition tunic is coated with
Cleaned zinc sulfide plectane is put into plating optical anti-reflective film in electron beam evaporation deposition machine,
Ge film, as the innermost layer of anti-reflection film system, simultaneously works as the effect of transition zone, and thickness is 60nm.
Taking out zinc sulfide plectane after being coated with, 80 DEG C are toasted 60min, argon impressed current anode 310V,
1.1A。
Step 3: surface segmentation
First use 10mm width high temperature gummed tape to zinc sulfide circle when zinc sulfide-based surface is split
Board substrate carries out equidistantly (interval 40mm) segmentation.
Step 4: DLC plated film for the first time
PECVD vacuum film coating chamber put into by zinc sulfide plectane after segmenting.In the feelings not heated
Under condition, when air pressure≤3.0 × 10-3During Pa, it is passed through methane, adjusts stable gas pressure at 4Pa.Start
Plated film, power is 150W, plated film time 15min.
Step 5: DLC plated film for the second time
After having plated first time DLC film, 10mm width high temperature gummed tape of tearing, wider with 40mm
High temperature gummed tape covers coating film area, is coated with DLC by identical coating process and time second time
Film, to make cut-off rule up.Plated film takes out zinc sulfide matrix, high temperature gummed tape of tearing after completing.Plating
Film completes.
Prepared by the zinc sulfide preparation of plates method of prepared by the present embodiment have diamond-film-like
Sheet material has the DLC film that bar-shaped zone is spliced, and thickness is 1 μm, can reduce DLC
The STRESS VARIATION of film, effectively prevent coming off of DLC film, uses high temperature gummed tape to split,
The shapes and sizes of cut zone can be grasped the most flexibly.
Embodiment 3
Step one: clean substrate
The length of side is that the square sulfuration zine plate of 10cm mixes with instillation petroleum ether and ethanol before plated film
Close the careful wiped clean of absorbent cotton of liquid, ultrasonic cleaning 15min the most in acetone, use after taking-up
Matrix dried by absorbent cotton, finally by alcohol wipe, puts into baking box and dries, stand-by.
Step 2: transition tunic is coated with
Cleaned zinc sulfide plectane is put into plating optical anti-reflective film in electron beam evaporation deposition machine,
Ge film, as the innermost layer of anti-reflection film system, simultaneously works as the effect of transition zone, and thickness is 60nm.
Taking out zinc sulfide plectane after being coated with, being coated with parameter is: 120 DEG C of baking 30min, argon is auxiliary
Supporing yang pole 290V, 0.9A.
Step 3: surface segmentation
First use 10mm width high temperature gummed tape to zinc sulfide circle when zinc sulfide-based surface is split
Board substrate carries out equidistantly (interval 10mm) segmentation, and adhesive tape is perpendicular to zinc sulfide sheet material,
Then the high temperature gummed tape being perpendicular to split for the first time with the high temperature gummed tape that 10mm is wide is pasted,
Spacing is 10mm.
Step 4: DLC plated film for the first time
PECVD vacuum film coating chamber put into by zinc sulfide plectane after segmenting.In the feelings not heated
Under condition, when air pressure≤3.0 × 10-3During Pa, it is passed through methane, adjusts stable gas pressure at 3Pa.Start
Plated film, power is 200W, plated film time 10min.
Step 5: DLC plated film for the second time
After having plated first time DLC film, 10mm width high temperature gummed tape of tearing, then be 10mm by the length of side
Square high temperature gummed tape cover coating film area, by identical coating process and the time second time
It is coated with DLC film, to make cut-off rule up.Plated film takes out zinc sulfide matrix, high temperature of tearing after completing
Adhesive tape.Plated film completes.
Prepared by the zinc sulfide preparation of plates method of prepared by the present embodiment have diamond-film-like
Sheet material has the DLC film that square area is spliced, and thickness is that 2 μm regional edge are a length of
10mm, can reduce the STRESS VARIATION of DLC film, effectively prevent coming off of DLC film, adopts
Split with high temperature gummed tape, the shapes and sizes of cut zone can be grasped the most flexibly.
Comparative example
Step one: clean substrate
The length of side is that the square sulfuration zine plate of 10cm mixes with instillation petroleum ether and ethanol before plated film
Close the careful wiped clean of absorbent cotton of liquid, ultrasonic cleaning 15min the most in acetone, use after taking-up
Matrix dried by absorbent cotton, finally by alcohol wipe, puts into baking box and dries, stand-by.
Step 2: DLC plated film
PECVD vacuum film coating chamber put into by zinc sulfide plectane after segmenting.In the feelings not heated
Under condition, when air pressure≤3.0 × 10-3During Pa, it is passed through methane, adjusts stable gas pressure at 4Pa.Start
Plated film, power is 150W, plated film time 15min, and the DLC film thickness obtained is 1 μm.
The zinc sulfide sheet material with diamond-film-like that embodiment and comparative example are obtained high temperature,
Carrying out performance measurement under the conditions of low temperature, damp and hot, salt fog, heavily friction and hot-water soak, result is such as
Shown in table 1.
Table 1 performance measurement contrast table
By table 1 it can be seen that embodiment 1-3 passed the test of above-mentioned all conditions, film is equal
Not falling off, comparative example passed high temperature, damp and hot and salt spray test, but at low temperature, weight
During friction and hot-water soak are tested, comparative example occurs in that film obscission, it follows that this
The zinc sulfide sheet material with diamond-film-like of bright application effectively prevents film from coming off.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is also
Being not limited to this, any those familiar with the art is at the technology model that the invention discloses
In enclosing, change can be readily occurred in or replace, all should contain within protection scope of the present invention.
Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (8)
1. a method for zinc sulfide-based surface plating diamond film, described zinc sulfide-based
Area >=the 50cm of body2, it is characterised in that comprise the steps:
(1) described zinc sulfide-based surface impurity is removed；
(2) plating of the zinc sulfide-based surface described in surface impurity transition zone is being removed, described
Transition zone is Ge film, and thickness is 60-80nm；
(3) at described Ge film plated surface diamond-film-like: by described zinc sulfide-based body surface
It is 1-25cm that face is divided into area2Region carry out coating diamond-like film, described diamond like carbon respectively
The thickness of film is 0.1-2 μm.
The method of zinc sulfide-based surface the most according to claim 1 plating diamond film,
It is characterized in that, described step (1) specifically includes following steps:
With the zinc sulfide matrix described in the absorbent cotton wiping with petroleum ether and alcohol blend, so
Rear cleaning, is dried.
The method of zinc sulfide-based surface the most according to claim 1 plating diamond film,
It is characterized in that, described step (2) specifically includes following steps:
E-beam evaporation is used to plate institute at the described zinc sulfide plate surface removing surface impurity
The Ge film stated, design parameter is: 80-120 DEG C of baking 30-60min, argon impressed current anode
290-310V, 0.9-1.1A.
The method of zinc sulfide-based surface the most according to claim 1 plating diamond film,
It is characterized in that, described step (3) specifically includes following steps:
Described zinc sulfide plate surface is divided into alternately arranged the first bar-shaped zone and second
Bar-shaped zone, the area of the first described bar-shaped zone is 1-25cm2, described second area
Area is 1-25cm2, first coating diamond-like film on described first area, the most again described
Second area coating diamond-like film.
The method of zinc sulfide-based surface the most according to claim 4 plating diamond film,
It is characterized in that described first coating diamond-like film on described first area exists the most again
Described second area coating diamond-like film specifically includes following steps:
First being pasted onto described second area with high temperature gummed tape, described high temperature is >=100 DEG C, so
After on described zinc sulfide-based surface coating diamond-like film, i.e. in the plating of described first area
Film, then, takes off described high temperature gummed tape, then is pasted onto the firstth described district with high temperature gummed tape
On territory, again described zinc sulfide-based surface is carried out coating diamond-like film, i.e. described
Plated film on second area, then takes off described high temperature gummed tape and i.e. completes zinc sulfide-based surface class
Being coated with of diamond film.
The method of zinc sulfide-based surface the most according to claim 4 plating diamond film,
It is characterized in that described first coating diamond-like film on described first area exists the most again
Described second area coating diamond-like film specifically includes following steps:
The first grid cover consistent with described zinc sulfide-based surface profile is used to cover described sulfur
Changing Zinc Matrix surface, described first grid cover includes the metal corresponding with described second area
Screen, for blocking described second area；Then by the described described sulfur being covered with first grid cover
Changing Zinc Matrix surface and carry out coating diamond-like film, i.e. plated film on described first area, takes off institute
State first grid cover；
The second gate cover consistent with described zinc sulfide board substrate surface profile is used to cover described
Zinc sulfide-based surface, described second gate cover includes the gold corresponding with described first area
Belong to screen, for blocking described second area；Then it is covered with described described in second gate cover
Zinc sulfide-based surface carries out coating diamond-like film, and i.e. plated film on described second area, takes off
Described second gate cover i.e. completes being coated with of zinc sulfide-based surface diamond-film-like.
7. according to described in claim 1 or 4 or 5 or 6 any one, there is diamond-film-like
The method of zinc sulfide-based surface plating diamond film, it is characterised in that described plating eka-gold
The film plating process that diamond film uses is plasma enhanced chemical vapor deposition method, and concrete operations are such as
Under: in air pressure≤3.0 × 10-3Under the conditions of Pa, it is passed through butane or methane gas to coating chamber, regulation
Air pressure, to 2-4Pa, starts plated film, and plated film power is 100-200W, automatic bias≤400V, heavy
The long-pending time is 10-20min.
8. there is a sulfuration zine plate for diamond-film-like, by claim 1-7 any one institute
The method stated is prepared, it is characterised in that the described sulfuration zine plate with diamond-film-like
Including zinc sulfide matrix, it is provided with the Ge film transition zone that thickness is 60-80nm；Described
Transition zone on be provided with diamond-film-like, described diamond like carbon film thickness is 0.1-2 μm；Institute
The diamond-film-like stated is 1-25cm by area2Diamond-film-like fritter be spliced.
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| CN109576706A (en) * | 2018-12-21 | 2019-04-05 | 云南北方驰宏光电有限公司 | A kind of silicon base diamond-like protective film and preparation method thereof |
| CN109696716A (en) * | 2019-01-15 | 2019-04-30 | 西安应用光学研究所 | A kind of film structure of ultra-wide multi-angle laser, the high-strength antireflective coating of LONG WAVE INFRARED two waveband |
| CN110846616A (en) * | 2019-12-18 | 2020-02-28 | 杨永亮 | Hood simulation piece for hard film deposition and adjusting device thereof |
| CN111304588A (en) * | 2020-03-26 | 2020-06-19 | 中国建筑材料科学研究总院有限公司 | Infrared germanium carbide film, infrared material with germanium carbide film, and preparation method and application of infrared material |
| CN115094396A (en) * | 2022-06-15 | 2022-09-23 | 北方夜视技术股份有限公司 | Anti-wraping plating method for atomic layer deposition coating |
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