CN105837032B - A kind of CIGS thin film glass substrate used for solar battery - Google Patents
A kind of CIGS thin film glass substrate used for solar battery Download PDFInfo
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- CN105837032B CN105837032B CN201610411356.3A CN201610411356A CN105837032B CN 105837032 B CN105837032 B CN 105837032B CN 201610411356 A CN201610411356 A CN 201610411356A CN 105837032 B CN105837032 B CN 105837032B
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- glass substrate
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- solar battery
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
The present invention discloses a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 70.1~72%2, 1.1~2% Al2O3, 0.01~0.09% ZrO2, 1.31~3.9% K2O, 10.3~13% Na2O, the SnO of 6~7.9% MgO, 1.1~1.5% CaO, 3~7% BaO and 0.1~0.5%, the wherein value of MgO/CaO are 5~7, Na2O/K2The value of O is 2.5~10;Above-mentioned each component is pressed after glass preparation technique melt molding up to the glass substrate;Glass substrate obtained heat distortion amount during high temperature thermal process is smaller, because the strain point of this glass is at least at 560 DEG C, higher than the soda-lime glass substrate of conventional CIGS batteries, and since fusion temperature is less than 1500 DEG C, the cost of fuel will not be increased and reduce the service life of refractory material, and coefficient of thermal expansion is within the temperature range of 25~300 DEG C
Description
Technical field
The present invention relates to special glass technical field, specifically a kind of CIGS thin film glass substrate used for solar battery.
Background technology
At present, for the glass substrate of thin-film solar cells mainly based on soda lime glass, technology of preparing is ripe,
Manufacture it is at low cost, but with the laboratory research of thin-film solar cells and the propulsion of industrialization process, CIGS thin film solar energy
The high efficiency of battery gradually occupy the leading position of field of thin film solar cells, and process temperatures highest is about 550 DEG C, this
For traditional soda lime glass of about 510 DEG C of strain point, it will necessarily be made in solar cell device processing procedure process
Deformation and warpage into glass, and then the quality of film layer is influenced, so as to decline entire solar cell device performance indicator, limit
The further promotion of thin-film solar cell photoelectric transfer efficiency is made.
Invention content
The purpose of the present invention is to provide a kind of CIGS thin film glass substrate used for solar battery, at 550 DEG C or so
In CIGS solar battery process heat treatment processes, glass substrate deformation is small, and good stability of the dimension, flatness are high, and will not
Influence film quality.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of CIGS thin film glass substrate used for solar battery includes the SiO of mass percent 70.1~72%2, 1.1~
2% Al2O3, 0.01~0.09% ZrO2, 1.31~3.9% K2O, 10.3~13% Na2O, 6~7.9% MgO, 1.1~
The value of the SnO of 1.5% CaO, 3~7% BaO and 0.1~0.5%, wherein MgO/CaO are 5~7;Above-mentioned each component presses glass
Up to the glass substrate after preparation process melt molding.
Further, the Na2O/ K2The value of O is 2.5~10.
Further, the SiO2、Al2O3With ZrO2Mass percentage content summation be 72.1~73%.
Further, the mass percentage content summation of described MgO, CaO and BaO are 12~14.8%.
The invention has the advantages that compared with common soda-lime-silica glass, the present invention has adjusted MgO/CaO and Na2O/
K2The ratio of O,, can by adjusting their ratio in the scope of the present invention because their influences to strain point of glass are notable
To realize the purpose for increasing strain point and reducing coefficient of thermal expansion;In addition, improve Na2O and K2The content of O is also beneficial to glass
Fusing;While the proportioning lower glass substrate of the present invention is in realization raising heat resistance and mechanical strength, it also can reach and be easy to molten
The purpose of change.
Specific embodiment
Embodiment one
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, including mass percent 71.39%
SiO2, 1.1% Al2O3, 0.01% ZrO2, 3.9% K2O, 11.5% Na2O, 7.5% MgO, 1.5% CaO, 3% BaO
With 0.1% SnO;The value of MgO/CaO is 5;Na2O/ K2The value of O is 2.9;Above-mentioned each component is melt by glass preparation technique
Up to the glass substrate after type.
Embodiment two
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 70.5%2、
1.6% Al2O3, 0.08% ZrO2, 2.22% K2O, 13.0% Na2O, 6.2% MgO, 1.2% CaO, 5.2% BaO with
0.2% SnO;The value of MgO/CaO is 6;Na2O/ K2The value of O is 5.9;Above-mentioned each component presses glass preparation technique melt molding
Afterwards up to the glass substrate.
Embodiment three
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 70.5%2、
1.6% Al2O3, 0.08% ZrO2, 2.42% K2O, 13.0% Na2O, 6% MgO, 1.2% CaO, 5.2% BaO with
0.2% SnO;The value of MgO/CaO is 5;Na2O/ K2The value of O is 5.4;Above-mentioned each component presses glass preparation technique melt molding
Afterwards up to the glass substrate.
Example IV
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 70.1%2、
2% Al2O3, 0.09% ZrO2, 1.31% K2O, 11.5% Na2O, 7.7% MgO, 1.1% CaO, 6% BaO and 0.2%
SnO;The value of MgO/CaO is 7;Na2O/ K2The value of O is 8.8;Above-mentioned each component press glass preparation technique melt molding after i.e.
Obtain the glass substrate.
Embodiment five
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 71%2、
1.1% Al2O3, 0.09% ZrO2, 1.31% K2O, 10.5% Na2O, 7.7% MgO, 1.1% CaO, 7% BaO with
0.2% SnO;The value of MgO/CaO is 7;Na2O/ K2The value of O is 8.8;Above-mentioned each component presses glass preparation technique melt molding
Afterwards up to the glass substrate.
Embodiment six
The present invention provides a kind of CIGS thin film glass substrate used for solar battery, includes the SiO of mass percent 71.9%2、
1.1% Al2O3, 0.09% ZrO2, 1.31% K2O, 10.3% Na2O, 7.9% MgO, 1.1% CaO, 5.8% BaO with
0.5% SnO;The value of MgO/CaO is 7.2;Na2O/ K2The value of O is 7.9;Above-mentioned each component is melt by glass preparation technique
Up to the glass substrate after type.
By the glass substrate as made from embodiment one to six with being carried out by the property indices of traditional components soda-lime glass
Comparison, including coefficient of thermal expansion, strain point, liquidus temperature, fusion temperature, brittleness index and body resistivity, is specifically shown in down
Table:
As seen from the above table, the coefficient of thermal expansion of one to six glass substrate of embodiment existsBetween,
Strain point meets the performance requirement of CIGS thin film glass substrate used for solar battery at 560 DEG C or more.The heat of traditional soda-lime glass
The coefficient of expansion is met the requirements, but strain point is at 510 DEG C or so, in this way under 550~600 DEG C of baking, the dimensionally stable of glass
Property will significantly reduce, while the film layer of glass substrate upper surface can be come off due to glass deformation.
For glass metal viscosity be 10Pa.s when fusion temperature, the present invention in fusion temperature be less than 1500 DEG C, with sodium
Lime glass approaches, therefore difficulty and melted cost height etc. are clarified as caused by high temperature viscometrics there is no traditional glass substrate component and is asked
Topic.
In embodiment one to six, the value of MgO/CaO is 5~7.2, and brittleness index increases to 6500~6900m-1/2, this
The influence for meaning to scrape, scratch caused by extraneous factor can greatly reduce;And the brittleness index of traditional soda-lime glass reaches
To 7100~7530m-1/2, this is the easy range for generating and scraping and scratching, and traditional soda-lime glass is due to part caused by scuffing
Defect may increase with preparation process with last handling process.
In embodiment one to six, work as Na2O/K2When the value of O is more than 2.9, body resistivity reaches 1012.1~1013 ;
And traditional soda-lime glass body resistivity is 108.9~1011.7 , so the present invention is by adjusting Na2O/K2O values can make body electric
Resistance rate reaches the level of conventional glass substrate, while can effectively inhibit reacting between alkali metal and CIGS thin film material.
Na2O is fluxing agent, since it has larger impact to coefficient of thermal expansion, can effectively adjust the coefficient of thermal expansion of glass.This
Na in invention2O content is 10.3~13%, if content is less than 10.3%, meltbility is deteriorated, and homogenizing becomes difficult;If contain
Higher than 13%, coefficient of thermal expansion increases amount, and strain point reduces, and water resistance and chemical resistance are deteriorated, and suitable content is 10.3~
13%。
K2O is the composition for adjusting glass component high temperature and low temperature viscometric property, it by with Na2The melange effect control alkali metal of O
The migration of ion in glass influences the conductivity of glass.K in the present invention2The content of O is 1.31~3.9%, for practical glass
The strain point of glass improves the temperature with reducing glass melting, Na2O/ K2The value of O is preferably 2.5~10.
MgO can reduce the high temperature viscometrics of glass composition, increase low temperature viscometric property, can also increase the strain of glass composition
Point, the content of MgO if content is more than 6%, due to the reduction of high temperature viscometrics, can to clarify for 6~7.9% in the present invention
Process carries out at a lower temperature;If content is higher than 7.9%, since the reduction of high temperature viscometrics may cause glass liquidus curve
The increase of temperature, coefficient of thermal expansion can also reduce, and suitable ranging from 6~7.9%.
The effect of CaO is to MgO is similar, can also reduce the high temperature viscometrics of glass metal.If the content of MgO exists in a component
More than 6%, then the optimum range of CaO is 0~1.5%, if content is higher than 1.5%, glass metal easily crystallizes, model preferably
Enclose is 1.1~1.5%.
The optimum range of MgO/CaO is 5~7, if beyond this range, the scraping and wiping resistance performance of glass, i.e. brittleness refer to
Number can be reduced, and glass network is better than other alkaline earths to the affinity of MgO due to the Ar ion mixing effect between MgO and CaO
Metal oxide and small ionic radius can reduce the density of glass.
The above described is only a preferred embodiment of the present invention, not make limitation in any form to the present invention;Appoint
What those skilled in the art, without departing from the scope of the technical proposal of the invention, all using the side of the disclosure above
Method and technology contents make technical solution of the present invention many possible changes and modifications or are revised as the equivalent reality of equivalent variations
Apply example.Therefore, every content without departing from technical solution of the present invention, technical spirit according to the present invention do above example
Any simple modification, equivalent replacement, equivalence changes and modification, still fall within technical solution of the present invention protection in the range of.
Claims (4)
1. a kind of CIGS thin film glass substrate used for solar battery, which is characterized in that including mass percent 70.1~72%
SiO2, 1.1~2% Al2O3, 0.01~0.09% ZrO2, 1.31~3.9% K2O, 10.3~13% Na2O, 6~7.9%
MgO, 1.1~1.5% CaO, 3~7% BaO and 0.1~0.5% SnO, wherein the value of MgO/CaO be 5~7;It is above-mentioned each
Component is pressed after glass preparation technique melt molding up to the glass substrate.
A kind of 2. CIGS thin film glass substrate used for solar battery according to claim 1, which is characterized in that the Na2O/
K2The value of O is 2.5~10.
A kind of 3. CIGS thin film glass substrate used for solar battery according to claim 1, which is characterized in that the SiO2、
Al2O3With ZrO2Mass percentage content summation be 72.1~73%.
4. a kind of CIGS thin film glass substrate used for solar battery according to claim 1, which is characterized in that the MgO,
The mass percentage content summation of CaO and BaO is 12~14.8%.
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CN201610411356.3A CN105837032B (en) | 2016-06-12 | 2016-06-12 | A kind of CIGS thin film glass substrate used for solar battery |
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CN201610411356.3A CN105837032B (en) | 2016-06-12 | 2016-06-12 | A kind of CIGS thin film glass substrate used for solar battery |
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CN105837032B true CN105837032B (en) | 2018-06-29 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102417295A (en) * | 2010-09-27 | 2012-04-18 | 旭硝子株式会社 | Glass composition for substrate |
CN102985382A (en) * | 2010-07-12 | 2013-03-20 | 日本电气硝子株式会社 | Glass plate |
JP2013180903A (en) * | 2012-02-29 | 2013-09-12 | Nippon Electric Glass Co Ltd | Building glass block and method for manufacturing the same |
CN103319074A (en) * | 2012-03-23 | 2013-09-25 | 旭硝子株式会社 | Glass substrate for plasma display panel and method for making the glass substrate |
-
2016
- 2016-06-12 CN CN201610411356.3A patent/CN105837032B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102985382A (en) * | 2010-07-12 | 2013-03-20 | 日本电气硝子株式会社 | Glass plate |
CN102417295A (en) * | 2010-09-27 | 2012-04-18 | 旭硝子株式会社 | Glass composition for substrate |
JP2013180903A (en) * | 2012-02-29 | 2013-09-12 | Nippon Electric Glass Co Ltd | Building glass block and method for manufacturing the same |
CN103319074A (en) * | 2012-03-23 | 2013-09-25 | 旭硝子株式会社 | Glass substrate for plasma display panel and method for making the glass substrate |
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