CN105826301A - Backside illuminated image sensor and preparation method thereof - Google Patents
Backside illuminated image sensor and preparation method thereof Download PDFInfo
- Publication number
- CN105826301A CN105826301A CN201610182183.2A CN201610182183A CN105826301A CN 105826301 A CN105826301 A CN 105826301A CN 201610182183 A CN201610182183 A CN 201610182183A CN 105826301 A CN105826301 A CN 105826301A
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- Prior art keywords
- metal material
- image sensor
- isolated part
- back side
- groove
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000007769 metal material Substances 0.000 claims abstract description 55
- 238000002955 isolation Methods 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005286 illumination Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000012774 insulation material Substances 0.000 abstract 6
- 230000005764 inhibitory process Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The present invention relates to a backside illuminated image sensor and a preparation method thereof. The backside illuminated image sensor comprises a silicon substrate with deep channel isolation, an insulation material isolation part is generated at the bottom of the groove of the deep channel isolation generates an insulation material isolation part through filling insulation materials, a metal material isolation part is generated at the upper portion of the groove of the deep channel isolation through filling metal material, the lower surface of the metal material isolation part is tightly contacted with the upper surface of the insulation material isolation part, and the upper surface of the metal material isolation part is at the same plane with the upper surface of the silicon substrate. The backside illuminated image sensor and the preparation method thereof are able to effectively employ the inhibition performance of the metal material isolation part on light crosstalk and the inhibition performance of the insulation material isolation part on electronic crosstalk; the bottom of the groove is filled with insulation materials, the technology is simple, and the filling of a deep groove is realized, so that the electronic crosstalk is inhibited, and the long-wave and long-light quantum efficiency is maintained; and moreover, the pixel performance of the backside illuminated image sensor is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of back side illumination image sensor and preparation method thereof.
Background technology
There is the crosstalk of three kinds of forms, respectively spectra overlap, light crosstalk and cross talk of electrons in the image sensor.Spectra overlap is caused by the feature of chromatic colour optical filter.Light crosstalk is owing to light is to caused by neighbor；Although by rear end formula storehouse in back side illumination image sensor, reflection or the diffraction of light are improved, but in a silicon substrate owing to light crosstalk can not be suppressed by doping isolation, therefore light crosstalk remains serious problems in a silicon substrate.Cross talk of electrons refers to electrons spread or floats to other pixels；Challenge is there is also, because having difficulties in terms of controlling deep silicon area Impurity Distribution by doping isolation suppression cross talk of electrons.
The good isolation characteristic that deep trench isolation (DTI) has compared to doping isolation due to it, and it is considered as a kind of optimum structure suppressing light crosstalk and cross talk of electrons.But, deep trench isolation in front end is limited by layout, and deep trench isolation in back is an effective solution.Using back deep trench isolation shaping to make the isolation of simple grid deep trench be achieved, its crosstalk noise is significantly changed, and is favorably improved quantum efficiency peak value.
Summary of the invention
It is an object of the present invention to provide a kind of back side illumination image sensor and preparation method thereof, it can preferably reduce light crosstalk and cross talk of electrons, and does not affect quantum efficiency.
Research finds the light crosstalk of suppression long wavelength, and improves quantum efficiency peak value, needs the deep trench isolation that the metal material of the 0.5um degree of depth is filled.But, preferably reducing cross talk of electrons needs 1.5um or the deep trench isolation filled more than the insulant of the 1.5um degree of depth.But, the deep trench isolation that the insulant of the 1.5um degree of depth is filled can not meet the deep trench filled such as metal material and isolate the optical crosstalk rejection condition needed for the superior isolation performance provided.Although it addition, the deep trench isolation that deep metal material is filled can reduce normal light crosstalk, but, the deep trench isolation that deep metal material is filled adds complex process degree and reduces the quantum efficiency of long wavelength's light, have impact on pixel performance.
The technical scheme is that
A kind of back side illumination image sensor, including silicon substrate, described silicon substrate has deep trench isolation, the bottom of the groove of described deep trench isolation generates insulant isolated part by fill insulant, the top of the groove of described deep trench isolation generates metal material isolated part by filler metal material, the lower surface of described metal material isolated part is in close contact with the upper surface of described insulant isolated part, and the upper surface of described metal material isolated part and the upper surface of silicon substrate maintain an equal level.
The invention has the beneficial effects as follows: insulant isolated part and metal material isolated part are combined, the bottom of groove generates insulant isolated part by fill insulant, and the top of groove generates metal material isolated part by filler metal material；Can effectively use metal material isolated part to the rejection of light crosstalk and the insulant isolated part rejection to cross talk of electrons；And the bottom of groove uses insulant fill process simple, it is possible to realize the filling of deeper groove, thus preferably suppress cross talk of electrons, and keep the quantum efficiency of long wavelength's light；Can comprehensively improve the pixel performance of back side illumination image sensor.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the degree of depth of described groove is more than or equal to 1.5um, and the height of described metal material isolated part is 0.5um.
Using above-mentioned further scheme to provide the benefit that: the degree of depth of groove can preferably suppress cross talk of electrons more than or equal to 1.5um, a length of 0.5um of metal material isolated part can effectively take into account and reduces light crosstalk and keep the quantum efficiency of long wavelength's light.
Further, described insulant is oxide.
Further, described oxide is silicon oxide.
Further, described metal material is copper, aluminum, tungsten or stannum.
Further, the upper surface of described metal material isolated part is provided with Pad layer.
Another technical scheme of the present invention is as follows:
The preparation method of a kind of back side illumination image sensor, comprises the steps:
Step 1, carries out mask deposition on the silicon substrate of back-illuminated type illumination PROCESS FOR TREATMENT successively and obtains the composition of deep trench isolation, and perform etching the groove generating deep trench isolation；
Step 2, uses insulant to be filled with described groove；
Step 3, performs etching the insulant having been filled with, and generates the insulant isolated part with preset height；
Step 4, uses metal material to be filled with described groove again；
Step 5, removes unnecessary metal material, makes the upper surface of the metal material isolated part of generation and the upper surface of silicon substrate maintain an equal level.
On the basis of technique scheme, the present invention can also do following improvement.
Further, also including step 6, the upper surface at described metal material isolated part generates Pad layer.
Further, the degree of depth of described groove is more than or equal to 1.5um, and the height of described metal material isolated part (212) is 0.5um.
Further, the employing that implements of the metal material that described removal is unnecessary chemically-mechanicapolish polishes (CMP) technique.
Accompanying drawing explanation
Fig. 1 is the plan structure schematic diagram of the deep trench isolation of a kind of back side illumination image sensor of the present invention；
Fig. 2 is the A-A sectional structure schematic diagram of the deep trench isolation of a kind of back side illumination image sensor of the present invention；
Fig. 3 is the method flow diagram of the preparation method of a kind of back side illumination image sensor of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1, silicon substrate, 2, deep trench isolation, 21, groove, 211, insulant isolated part, 212, metal material isolated part.
Detailed description of the invention
Being described principle and the feature of the present invention below in conjunction with accompanying drawing, example is served only for explaining the present invention, is not intended to limit the scope of the present invention.
As depicted in figs. 1 and 2, a kind of back side illumination image sensor, including silicon substrate 1, described silicon substrate 1 has deep trench isolation 2, the bottom of the groove 21 of described deep trench isolation 2 generates insulant isolated part 211 by fill insulant, the top of the groove 21 of described deep trench isolation 2 generates metal material isolated part 212 by filler metal material, the lower surface of described metal material isolated part 212 is in close contact with the upper surface of described insulant isolated part 211, and the upper surface of described metal material isolated part 212 and the upper surface of silicon substrate 1 maintain an equal level.
The degree of depth of described groove 21 is more than or equal to 1.5um, and the height of described metal material isolated part 212 is 0.5um.
Described insulant is oxide, such as silicon oxide.Described metal material is copper, aluminum, tungsten or stannum.
The upper surface of described metal material isolated part 212 is provided with Pad layer.
As it is shown on figure 3, the preparation method of a kind of back side illumination image sensor, comprise the steps:
Step 1, carries out mask deposition on the silicon substrate 1 of back-illuminated type illumination PROCESS FOR TREATMENT successively and obtains the composition of deep trench isolation 2, and perform etching the groove 21 generating deep trench isolation 2；
Step 2, uses insulant to be filled with described groove 21；
Step 3, performs etching the insulant having been filled with, and generates the insulant isolated part 211 with preset height；
Step 4, uses metal material to be filled with described groove 21 again；
Step 5, removes unnecessary metal material, makes the upper surface of the metal material isolated part 212 of generation and the upper surface of silicon substrate 1 maintain an equal level；The metal material that described removal is unnecessary implement employing CMP process；
Step 6, after the upper surface of metal material isolated part 212 and the upper surface of silicon substrate 1 maintain an equal level, then the upper surface generation Pad layer at described metal material isolated part 212.
The degree of depth of described groove 21 is more than or equal to 1.5um, and the height of described metal material isolated part (212) is 0.5um.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all within the spirit and principles in the present invention, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (10)
1. a back side illumination image sensor, it is characterized in that, including silicon substrate (1), described silicon substrate (1) has deep trench isolation (2), the bottom of the groove (21) of described deep trench isolation (2) generates insulant isolated part (211) by fill insulant, the top of the groove (21) of described deep trench isolation (2) generates metal material isolated part (212) by filler metal material, the lower surface of described metal material isolated part (212) is in close contact with the upper surface of described insulant isolated part (211), the upper surface of described metal material isolated part (212) and the upper surface of silicon substrate (1) maintain an equal level.
A kind of back side illumination image sensor, it is characterised in that the degree of depth of described groove (21) is more than or equal to 1.5um, and the height of described metal material isolated part (212) is 0.5um.
A kind of back side illumination image sensor, it is characterised in that described insulant is oxide.
A kind of back side illumination image sensor, it is characterised in that described oxide is silicon oxide.
A kind of back side illumination image sensor, it is characterised in that described metal material is copper, aluminum, tungsten or stannum.
6. according to the arbitrary described a kind of back side illumination image sensor of claim 1 to 5, it is characterised in that the upper surface of described metal material isolated part (212) is provided with Pad layer.
7. the preparation method of a back side illumination image sensor, it is characterised in that comprise the steps:
Step 1, carries out mask deposition on the silicon substrate (1) of back-illuminated type illumination PROCESS FOR TREATMENT successively and obtains the composition of deep trench isolation (2), and perform etching the groove (21) generating deep trench isolation (2)；
Step 2, uses insulant to be filled with described groove (21)；
Step 3, performs etching the insulant having been filled with, and generates the insulant isolated part (211) with preset height；
Step 4, uses metal material to be filled with described groove (21) again；
Step 5, removes unnecessary metal material, makes the upper surface of the metal material isolated part (212) of generation and the upper surface of silicon substrate (1) maintain an equal level.
The preparation method of a kind of back side illumination image sensor, it is characterised in that also include step 6, the upper surface described metal material isolated part (212) generates Pad layer.
The preparation method of a kind of back side illumination image sensor, it is characterised in that the degree of depth of described groove (21) is more than or equal to 1.5um, and the height of described metal material isolated part (212) is 0.5um.
10. according to the preparation method of the arbitrary described a kind of back side illumination image sensor of claim 7 to 9, it is characterised in that the metal material that described removal is unnecessary implement employing CMP process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610182183.2A CN105826301A (en) | 2016-03-28 | 2016-03-28 | Backside illuminated image sensor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610182183.2A CN105826301A (en) | 2016-03-28 | 2016-03-28 | Backside illuminated image sensor and preparation method thereof |
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| CN105826301A true CN105826301A (en) | 2016-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610182183.2A Pending CN105826301A (en) | 2016-03-28 | 2016-03-28 | Backside illuminated image sensor and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845624A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | A kind of imaging sensor and forming method thereof |
| CN107845652A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | A kind of imaging sensor and forming method thereof |
| CN108281448A (en) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | The manufacturing method of back side illumination image sensor |
| CN109585479A (en) * | 2018-11-30 | 2019-04-05 | 长江存储科技有限责任公司 | A kind of semiconductor devices and forming method thereof |
| CN109728011A (en) * | 2017-10-31 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Back-illuminated type BSI imaging sensor |
| CN110634898A (en) * | 2019-09-23 | 2019-12-31 | 上海华力微电子有限公司 | Deep silicon groove for back-illuminated image sensor and forming method thereof |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728011A (en) * | 2017-10-31 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Back-illuminated type BSI imaging sensor |
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| CN107845652A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | A kind of imaging sensor and forming method thereof |
| CN108281448A (en) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | The manufacturing method of back side illumination image sensor |
| CN109585479A (en) * | 2018-11-30 | 2019-04-05 | 长江存储科技有限责任公司 | A kind of semiconductor devices and forming method thereof |
| CN110634898A (en) * | 2019-09-23 | 2019-12-31 | 上海华力微电子有限公司 | Deep silicon groove for back-illuminated image sensor and forming method thereof |
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Application publication date: 20160803 |