CN105824179B - A kind of optical projection system - Google Patents

A kind of optical projection system Download PDF

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Publication number
CN105824179B
CN105824179B CN201610323828.XA CN201610323828A CN105824179B CN 105824179 B CN105824179 B CN 105824179B CN 201610323828 A CN201610323828 A CN 201610323828A CN 105824179 B CN105824179 B CN 105824179B
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CN
China
Prior art keywords
laser diode
light
projection system
light source
green
Prior art date
Application number
CN201610323828.XA
Other languages
Chinese (zh)
Other versions
CN105824179A (en
Inventor
詹姆斯·W·拉林
保罗·鲁迪
Original Assignee
天空激光二极管有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US18210509P priority Critical
Priority to US61/182,105 priority
Priority to US12/789,303 priority patent/US8427590B2/en
Priority to US12/789,303 priority
Application filed by 天空激光二极管有限公司 filed Critical 天空激光二极管有限公司
Priority to CN201080023738.XA priority patent/CN102449550B/en
Publication of CN105824179A publication Critical patent/CN105824179A/en
Application granted granted Critical
Publication of CN105824179B publication Critical patent/CN105824179B/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03BAPPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00Projectors or projection-type viewers; Accessories therefor
    • G03B21/14Details
    • G03B21/20Lamp housings
    • G03B21/2006Lamp housings characterised by the light source
    • G03B21/2033LED or laser light sources
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00Details of colour television systems
    • H04N9/12Picture reproducers
    • H04N9/31Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3129Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM] scanning a light beam on the display screen
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00Details of colour television systems
    • H04N9/12Picture reproducers
    • H04N9/31Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
    • H04N9/3141Constructional details thereof
    • H04N9/315Modulator illumination systems
    • H04N9/3161Modulator illumination systems using laser light sources
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Abstract

The present invention relates to a kind of optical projection system, including:Interface, for receiving image or vision signal;Light source, it is included in the green laser diode of 490nm~540nm work in wavelength ranges, the green laser diode is arranged on mounting substrate and a surface, the mounting substrate includes gallium nitride material, and the surface has { 20 21 } half-shadow sexual orientation, the green laser diode has on said surface is orientated the laser strip region characterized by the chamber in the projection in c directions;And power supply, it is electrically connected to the light source.

Description

A kind of optical projection system

The application is that international application no is PCT/US2010/036739, and international filing date is on May 18th, 2010, is entered National Phase in China day is on November 29th, 2011, and Application No. 201080023738.X, entitled " one kind projects system The divisional application of the application of system ", entire contents are hereby expressly incorporated by reference.

The cross reference of related application

This application claims on May 29th, 2009 U.S. Provisional Patent Application submitted the 61/182,105th it is preferential Power.The application is also required in the priority of on the May 27th, 2010 of the U. S. application submitted the 12/789,303rd.

For the statement of the rights and interests of invention carried out under the research and development of government-funded

It can not apply

With reference to " sequence list " (table or computer program list annex submitted by CD)

It can not apply

Technical field

The present invention relates to Display Technique.More specifically, each embodiment of the present invention provides wherein one or more Laser diode and/or LED are used as the projection type display system for being used to illuminate the light source of image.In one group of embodiment, this Invention is provided using using the blueness of the material manufacture containing gallium nitride and/or the projecting apparatus system of green laser.Another In one group of embodiment, the invention provides with the digital light processing engine illuminated by blueness and/or green laser device Optical projection system.In a particular embodiment, the invention provides 3D display system.It there is other embodiments as well.

Background technology

Become increasingly cheaper and digital advertisement in the change of gas station, market and cafe for TV as LCD is shown It must become more and more popular, big display becomes to become more and more popular and it is expected that will become more attractive in the coming years. Coming in the past few years, it is noted that large-screen display (for example, 40 inches of TV) has substantive growth (for example, more than 40%), and And it is also larger display that consumer, which also increasingly gets used on knee and PC,.Although it can be obtained more by hand-held device Content viewable (such as TV, internet and video), but because keyboard, camera and other features are to the competing of space and electric power Strive so that display in hand-held consumption electronic product it is still smaller (<3”).

Therefore, it is desirable to display image and/or the improvement system of video.

The content of the invention

The present invention relates to Display Technique.More specifically, each embodiment of the present invention provides wherein one or more Laser diode is used as the projection type display system for being used to illuminate the light source of image.In one group of embodiment, the present invention provides Using using the blueness of material manufacture containing gallium nitride and/or the projecting apparatus system of green laser.In another group of implementation In mode, the invention provides the optical projection system with the digital light processing engine illuminated by blueness and/or green laser device. It there is other embodiments as well.

According to embodiment, the invention provides optical projection system.The optical projection system includes:Interface, for receive image or Vision signal;Light source, it is included in the green laser diode of 490nm~540nm work in wavelength ranges, the green laser two Pole pipe is arranged on mounting substrate and a surface, and the mounting substrate includes gallium nitride material, and the surface has { 20-21 } Half-shadow sexual orientation, the green laser diode has on said surface is orientated what is characterized by the chamber in the projection in c directions Laser strip region;And power supply, it is electrically connected to the light source.

According to embodiment, the invention provides optical projection system.The optical projection system includes:Interface, for receive image or Vision signal;Light source, the light source are included in the blue laser diode of 430nm~480nm wave-length coverages work, the blueness Laser diode is arranged on mounting substrate and a surface, and the mounting substrate includes gallium nitride material, and the surface has { 20-21 } half-shadow sexual orientation, the blue laser diode has on said surface to be orientated by the chamber in the projection in c directions The laser strip region of sign;And power supply, it is electrically connected to the light source.

According to embodiment, the invention provides optical projection system.The optical projection system includes being used for the interface for receiving video.Should System also includes being used for the image processor for handling video.The system includes the light source for including multiple laser diodes.It is multiple to swash Optical diode includes blue laser diode.Blue laser diode is manufactured on the gallium nitride material of nonpolar orientation.This is System includes the power supply for being electrically connected to light source.

According to another embodiment, the invention provides optical projection system.The system includes being used for the interface for receiving video.Should System also includes being used for the image processor for handling video.The system includes the light source for including multiple laser diodes.It is multiple to swash Optical diode includes blue laser diode.Blue laser diode is manufactured on the gallium nitride material of half-shadow sexual orientation.This is System also includes the power supply for being electrically connected to light source.

According to the embodiment of the present invention, the invention provides projection arrangement.The projection arrangement includes the shell with opening Body.The device also includes being used for the input interface for receiving one or more picture frames.The device includes video processing module.Separately Outside, the device includes lasing light emitter.Lasing light emitter includes blue laser diode, green laser diode and red laser diode. Blue laser diode is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and has about 430nm~480nm peaks It is worth operation wavelength.Green laser diode is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and has about 490nm ~540nm peak value operation wavelength.Red laser diode is manufactured by AlInGaP.Lasing light emitter is configured as coming from by combination The output of blue laser diode, green laser diode and red laser diode produces laser beam.The device also includes Laser drive module, it is connected to lasing light emitter.Laser drive module is produced based on the pixel from one or more picture frames Raw three driving currents.Each in three driving currents is used to drive laser diode.The device also includes micro electronmechanical System (MEMS) scanning mirror (or " fly mirror (flying mirror) "), it is configured to laser beam projects by opening to specific On position, so as to produce single picture.By raster scanning in two dimensions (raster) pixel, to form complete image.Should Device includes the optical component being arranged in lasing light emitter near zone, and the optical component is used to laser beam being oriented to MEMS scannings Mirror.The device includes the power supply for being electrically connected to lasing light emitter and MEMS scanning mirrors.

According to embodiment, the invention provides projection arrangement.The projection arrangement includes the housing with opening.The device Also include being used for the input interface for receiving one or more picture frames.The device includes video processing module.In addition, the device bag Include lasing light emitter.Lasing light emitter includes blue laser diode, green laser diode and red laser diode.The pole of blue laser two Pipe is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and the peak value operating wave with about 430nm~480nm It is long.Green laser diode is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and has about 490nm~540nm Peak value operation wavelength.In this embodiment, blue laser diode and green laser diode will share same substrate.It is red Color laser diode can be manufactured by AlInGaP.Lasing light emitter is configured as by combination from blue laser diode, green laser The output of diode and red laser diode produces laser beam.The device also includes laser drive module, and it is connected to Lasing light emitter.Laser drive module produces three driving currents based on the pixel from one or more picture frames.Three drivings Each in electric current is used to drive laser diode.The device also includes MEMS scanning mirrors (or " winged mirror "), is configured to lead to Opening is crossed by laser beam projects to ad-hoc location, so as to produce single picture.By raster scanning pixel in two dimensions, come Form complete image.The device includes the optical component being arranged in lasing light emitter near zone, and the optical component is used for laser Beam is oriented to MEMS scanning mirrors.The device includes the power supply for being electrically connected to lasing light emitter and MEMS scanning mirrors.

According to embodiment, the invention provides projection arrangement.The projection arrangement includes the housing with opening.The device Also include being used for the input interface for receiving one or more picture frames.The device includes video processing module.In addition, the device bag Include lasing light emitter.Lasing light emitter includes blue laser diode, green laser diode and red laser diode.The pole of blue laser two Pipe is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and the peak value operating wave with about 430nm~480nm It is long.Green laser diode is manufactured in the substrate containing Ga of nonpolar or semipolar orientation, and has about 490nm~540nm Peak value operation wavelength.Red laser diode can be manufactured by AlInGaP.In this embodiment, two or more different colours Laser will be packaged in together in same packaging part.In the embodiment that this is encapsulated jointly, from blue laser diode, The output of green laser diode and red laser diode will be combined into single light beam.The device also includes laser and driven Module, it is connected to lasing light emitter.Laser drive module produces three drivings based on the pixel from one or more picture frames Electric current.Each in three driving currents is used to drive laser diode.The device also includes MEMS (MEMS) Scanning mirror (or " winged mirror "), it is configured on laser beam projects to ad-hoc location by opening, so as to produce single picture.It is logical Raster scanning pixel in two dimensions is crossed, to form complete image.The device includes the light being arranged in lasing light emitter near zone Department of the Chinese Academy of Sciences's part, the optical component are used to laser beam being oriented to MEMS scanning mirrors.The device includes being electrically connected to lasing light emitter and MEMS is swept Retouch the power supply of mirror.

According to another embodiment, the invention provides projection arrangement.The device includes the housing with opening.The device Also include being used for the input interface for receiving one or more picture frames.The device includes lasing light emitter.Lasing light emitter includes blue laser Diode, green laser diode and red laser diode.Blue laser diode is manufactured in nonpolar or semipolar orientation The substrate containing Ga on, and with about 430nm~480nm peak value operation wavelength.Green laser diode is manufactured in non-pole Property or half-shadow sexual orientation substrate containing Ga on, and with about 490nm~540nm peak value operation wavelength.The pole of red laser two Pipe can be manufactured by AlInGaP.Lasing light emitter is configured to by combination from blue laser diode, green laser diode and red The output of color laser diode produces laser beam.The device includes digital light processing (DLP) chip, and it includes digital micromirror device Part.Digital mirror device includes multiple speculums, and each speculum corresponds to one or more pixels of one or more picture frames. The device includes the power supply for being electrically connected to lasing light emitter and digital light processing chip.Many deformations of the embodiment, example may be present The laser that same substrate or two or more different colours are shared such as blue laser diode and green laser diode is contained in Embodiment in same packaging part.In the embodiment that this is encapsulated jointly, from blue laser diode, green laser two The output of pole pipe and red laser diode will be combined into single light beam.

According to another embodiment, the invention provides projection arrangement.The device includes the housing with opening.The device Including the input interface for receiving one or more picture frames.The device includes lasing light emitter.Lasing light emitter includes blue laser two Pole pipe, green laser diode and red laser diode.Blue laser diode is manufactured in nonpolar or semipolar orientation In substrate containing Ga, and the peak value operation wavelength with about 430nm~480nm.Green laser diode is manufactured in nonpolar Or in the substrate containing Ga of half-shadow sexual orientation, and the peak value operation wavelength with about 490nm~540nm.Red laser diode It can be manufactured by AlInGaP.The device includes digital light processing (DLP) chip, and it includes three digital mirror devices.Digital mirror device In each include multiple speculums, each speculum corresponds to one or more pixels of one or more picture frames.It is color Color beam is projected in digital mirror device respectively.The device includes the electricity for being electrically connected to lasing light emitter and digital light processing chip Source.Many deformations of the embodiment may be present, such as blue laser diode and green laser diode share same substrate Or the laser of two or more different colours is contained in the embodiment in same packaging part.In the embodiment that this is encapsulated jointly In, the output from blue laser diode, green laser diode and red laser diode will be combined into single light beam.

As an example, colour wheel can include the fluorescent material for being used to change the color of the light sent from light source.Specific Embodiment in, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, blueness Deng).In the exemplary embodiment, projecting apparatus includes the light source comprising blue-light source and red light source.Colour wheel includes being used for indigo plant The slit of coloured light and the region containing fluorophor for converting blue light into green light.In operation, blue-light source (example Such as, blue laser diode or blue led) by slit offer blue light, and excite green light from the region containing fluorophor; Red light is provided independently in red light source.Green light transmissive from fluorophor crosses colour wheel, or is reflected back by colour wheel.It is in office In the case of one, green light is collected and is re-oriented to micro-display by optical component.It is also directed at by the blue light of slit Micro-display.Blue-light source can be the laser diode or LED being manufactured on nonpolar or semipolar orientation GaN.Alternatively Ground, the blue laser diode with fluorophor can be substituted using green laser diode to send green light.It is it should be understood that color It is also feasible that color light source combines with other of its colour wheel.

As another example, colour wheel can include a variety of fluorescent materials.For example, colour wheel can include and blue-light source group The green-emitting phosphor and red-emitting phosphors of conjunction.In a particular embodiment, colour wheel includes multiple regions, and each region corresponds to Specific color (for example, red, green, blueness etc.).In the exemplary embodiment, projecting apparatus includes including blue-light source Light source.Colour wheel includes the slit and two regions containing fluorophor for blue laser, and the two contain the region of fluorophor It is respectively used to convert blue light into green light and converts blue light into red light.In operation, blue-light source is (for example, blue Color laser diode or blue led) provide blue light by slit and excite green light and red from the region containing fluorophor Light.Green light and red light from fluorophor can reflect back transmitted through colour wheel, or by colour wheel.In any case, it is green Coloured light and red light are collected and are re-oriented to micro-display by optical component.Blue-light source can be manufactured in it is nonpolar or half Laser diode or LED on polarity orientation GaN.Combined it should be understood that color light source may be present with other of its colour wheel.

As another example, colour wheel can include blue emitting phophor material, green phosphor material and red-emitting phosphors material Material.For example, colour wheel can include blue emitting phophor, green-emitting phosphor and the red-emitting phosphors with ultraviolet (UV) combination of light sources. In specific embodiment, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, indigo plant Color etc.).In the exemplary embodiment, projecting apparatus includes the light source containing UV light sources.Colour wheel contains fluorophor including three Region, these three regions for containing fluorophor are respectively used to UV light being converted into blue light, UV light is converted into green light and UV light is converted into red light.In operation, colour wheel sequentially sends blue light, green light and red from the region containing fluorophor Coloured light.Blue light, green light and red light from fluorophor can reflect back transmitted through colour wheel, or by colour wheel.Any In the case of, blue light, green light and red light are collected and are re-oriented to micro-display by optical component.UV light sources can be system Make in laser diode or LED on nonpolar or semipolar orientation GaN.It should be understood that can be color light source and its colour wheel Other combinations.

According to another embodiment, the invention provides projection arrangement.The device includes the housing with opening.The device Including the input interface for receiving one or more picture frames.The device includes lasing light emitter.Lasing light emitter includes blue laser two Pole pipe, green laser diode and red laser diode.Blue laser diode is manufactured in nonpolar or semipolar orientation In substrate containing Ga, and the peak value operation wavelength with about 430nm~480nm.Green laser diode is manufactured in nonpolar Or in the substrate containing Ga of half-shadow sexual orientation, and the peak value operation wavelength with about 490nm~540nm.Red laser diode It can be manufactured by AlInGaP.Green laser diode has about 490nm~540nm wavelength.Lasing light emitter is configured to pass through combination Output from blue laser diode, green laser diode and red laser diode produces laser beam.The device bag Digital light processing (DLP) chip is included, it includes three digital mirror devices.Each digital mirror device includes multiple speculums, each Speculum corresponds to one or more pixels of one or more picture frames.Column of colour is projected digital mirror device respectively On.The device includes the power supply for being electrically connected to lasing light emitter and digital light processing chip.Many deformations of the embodiment may be present, Such as blue laser diode and green laser diode share the laser receiving of same substrate or two or more different colours Embodiment in same packaging part.In the embodiment that this is encapsulated jointly, from blue laser diode, green laser The output of diode and red laser diode will be combined into single light beam.

As an example, colour wheel can include the fluorescent material for being used to change the color of the light sent from light source.Specific Embodiment in, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, blueness Deng).In the exemplary embodiment, projecting apparatus includes the light source comprising blue-light source and red light source.Colour wheel includes being used for indigo plant The slit of coloured light and the region containing fluorophor for converting blue light into green light.In operation, blue-light source (for example, Blue laser diode or blue led) by slit offer blue light, and excite green light from the region containing fluorophor;It is red Red light is provided independently in light source.Green light from fluorophor reflects back transmitted through colour wheel, or by colour wheel.In either case Under, green light is collected and is re-oriented to micro-display by optical component.Micro-display is also directed at by the blue light of slit. Blue-light source can be the laser diode or LED being manufactured on nonpolar or semipolar orientation GaN.Alternatively, it is possible to make The blue laser diode with fluorophor is substituted with green laser diode to send green light.It should be understood that color light source with Other combinations of its colour wheel are also possible.

As another example, colour wheel can include a variety of fluorescent materials.For example, colour wheel can include and blue-light source group The green-emitting phosphor and red-emitting phosphors of conjunction.In a particular embodiment, colour wheel includes multiple regions, and each region corresponds to Specific color (for example, red, green, blueness etc.).In the exemplary embodiment, projecting apparatus includes containing blue-light source Light source.Colour wheel includes the slit and two regions containing fluorophor for blue laser, and the two contain the region of fluorophor It is respectively used to convert blue light into green light and converts blue light into red light.In operation, blue-light source (for example, Blue laser diode or blue led) provide blue light by slit and excite green light and red from the region containing fluorophor Coloured light.Green light and red light from fluorophor can reflect back transmitted through colour wheel, or by colour wheel.In any case, Green light and red light are collected and are re-oriented to micro-display by optical component.Blue-light source can be manufactured in it is nonpolar or Laser diode or LED on the GaN of half-shadow sexual orientation.It should be understood that can be that color light source combines with other of its colour wheel.

As another example, colour wheel can include blue emitting phophor material, green phosphor material and red-emitting phosphors material Material.For example, colour wheel can include blue emitting phophor, green-emitting phosphor and the red-emitting phosphors with ultraviolet (UV) combination of light sources. In specific embodiment, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, indigo plant Color etc.).In the exemplary embodiment, projecting apparatus includes the light source containing UV light sources.Colour wheel contains fluorophor including three Region, these three regions for containing fluorophor are respectively used to UV light being converted into blue light, UV light is converted into green light and UV light is converted into red light.In operation, colour wheel sequentially sends blue light, green light and red from the region containing fluorophor Coloured light.Blue light, green light and red light from fluorophor can reflect back transmitted through colour wheel, or by colour wheel.Any In the case of, blue light, green light and red light are collected and are re-oriented to micro-display by optical component.UV light sources can be system Make in laser diode or LED on the GaN of nonpolar or semipolar orientation.It should be understood that can be color light source and its colour wheel Other combination.

Using present invention obtains the various advantages better than prior art.Specifically, the present invention is realized using efficiency light The optical projection system of the high performance-price ratio in source.In a particular embodiment, light source can be in a manner of relatively easy and high performance-price ratio Manufacture.According to embodiment, traditional material and/or side known to those of ordinary skill in the art can be used in the present apparatus and method Method manufactures.In one or more embodiments, laser device can have multiple wavelength.Certainly, exist other deformations, Modification and replacement.According to embodiment, one or more of these advantages can be obtained.The advantage of these and other will be in this explanation It is described in book full text, gives description in further detail below.

The present invention realizes these advantages and other advantages under the background of known treatment technology, however, to the present invention Further understanding for nature and advantages can be realized by reference to specification and drawings part later.

Brief description of the drawings

Fig. 1 is the diagram for showing conventional projection system.

Fig. 2A is the simplification figure for showing the projection arrangement according to embodiment of the present invention.

Fig. 2 B are shown according to the detailed of the laser device 200 being manufactured in { 20-21 } substrate of embodiment of the present invention Thin section view.

Fig. 2 C are the simplification figures for showing the projecting apparatus with LED light source.

Fig. 3 A are the replacement diagrammatic illustrations according to the projection arrangement of embodiment of the present invention.

Fig. 3 B are the simplification figures for showing the laser diode being packaged together according to embodiment of the present invention.

Fig. 3 C are the sections for the active area for showing the emission wavelength with classification fire wall according to embodiment of the present invention Diagram.

Fig. 3 D are the simplification figures in the section for showing multiple active areas according to embodiment of the present invention.

Fig. 3 E are the simplification figures for showing the projecting apparatus with LED light source.

Fig. 4 A are the simplification figures for showing the projection arrangement according to embodiment of the present invention.

Fig. 4 B are the simplification figures for showing the laser diode for being integrated into single package according to embodiment of the present invention.

Fig. 5 A are the simplification figures for showing the DLP projection arrangements according to embodiment of the present invention.

Fig. 5 B are the simplification figures for showing the DLP projector according to embodiment of the present invention.

Fig. 6 is the simplification figure for showing the 3 chip DLP projection systems according to embodiment of the present invention.

Fig. 7 is the simplification figure for showing the 3D display for being related to the polarization image by polarising glass filtering.

Fig. 8 is the simplification figure for showing the 3D optical projection systems according to embodiment of the present invention.

Fig. 9 is the simplification figure for showing the LCOS optical projection systems 900 according to embodiment of the present invention.

Embodiment

The present invention relates to Display Technique.More specifically, each embodiment of the present invention provides wherein one or more Laser diode and/or LED are used as the projection type display system for being used to illuminate the light source of image.In one group of embodiment, this Invention is provided using using the blueness of the material manufacture containing gallium nitride and/or the projecting apparatus system of green laser.Another In one group of embodiment, the invention provides with the digital light processing engine illuminated by blueness and/or green laser device Optical projection system.It there is other embodiments as well.

As described above, traditional display type is typically inadequate.Micro projector from handheld device by projecting big Image (reaches more than 60 inches) so that the display that film, net surfing and other images can be to be accustomed to user The same size of size is shared, and solves the problem.Therefore, pocket-sized projector, separate sets micro projector and shifting Embedded micro projector is used more and more in dynamic equipment (e.g., phone).

Currently, the InGaN base lasers of commercialization and LED are grown in the c surface of GaN lattices.It is known that deposition InGaN luminescent layers in traditional GaN orientations are influenceed by the internal electric field related to polarity.In these structures, certainly The electric charge that hair polarization is resulted from GaN bondings is asymmetric, and piezoelectric polarization is the product of stress.In quantum well structure, these Polarization field is spatially separating electron wave function and hole wave functions, so as to reduce their radiativity combined efficiency.Due to pressure Electropolarized stress dependence so that with indium in the luminescent layer required for the laser and LED of blueness and (especially) green The increase of content, these fields insides become more and more stronger.

In addition to the radiativity recombination coefficient of reduction hinders LED luminance, internal electric field promotes in luminescent quantum well layer Produce quantum confined stark effect (QCSE).The effect causes peak emission wavelength with carrier density in quantum well layer Increase and blue shift occurs.Because carrier density increases with the increase of electric current, so blue led or green LED will be with Electric current and occur peak wavelength movement.This wavelength is to the dependence of driving current for LED by the aobvious of current-modulation scheme Show should be used to say that it is undesirable because color will change with electric current.In laser diode, carrier density with Electric current increase and increase, untill the laser threshold when gain in chamber exceedes loss.In order that optical maser wavelength is in indigo plant Color region and green area, the blue shift of the peak wavelength below this threshold value promote to grow luminous with the increase of indium content Layer, to compensate blue shift.It is well known that this increase of indium content will cause the quality of materials of poor quality, because stress Increase and indium fractional condensation.In order to realize efficient blue laser and green laser and LED, it is therefore desirable for be reduction and pole Change relevant electric field or the electric field relevant with polarization is completely eliminated.

Long-term understanding is that device architecture is orientated on (for example, nonpolar a faces or m faces) or between non-in unconventional GaN The growth on semi-polarity face between polar surface and c surface, can eliminate or reduce polarization field.In these novel crystal dignity, outside Prolong structure and device architecture using distinctive design freedom.In addition, it is grown in nonpolar and semi-polarity substrate The anisotropic stress of InGaN films causes effective hole mass to reduce, and the reduction of effective hole mass can make laser two Differential gain increase and transparent current density in pole pipe reduce.The blueness that is such as manufactured on nonpolar and semi-polarity face and The laser of green and LED device are improved performance (higher radiativity combined efficiency, the peak with driving current reduced Value wavelength blue shift, the device design flexibility improved and good epitaxial growth quality) provide exciting possibility.

Canonical projection instrument based on solid state illuminator includes:

Light source (laser or LED),

Optical component,

Such as micro-display of liquid crystal on silicon (LCOS) or DMD (DMD),

Drive plate, and

Power supply (that is, battery or power supply adaptor).

According to application, optical projection system can utilize polarised light or non-polarized light.For example, the optical projection system based on single scanner (for example, micro-projector) and based on DLP system usually using unpolarized light source.For some applications, such as based on LCOS Optical projection system, polarized light source is desired.Generally, the blue led used in conventional projector and green LED (can be Red LED) it is unpolarized (or there is low polarization ratio), so as to cause excessive light because of the optical component dependent on polarization Loss, and the spatial mode quality gone on business is showed, it requires big LCOS or LCD chip, and is not for Miniaturization Design Feasible, because light can not be focused in small region.Due to point of X and Y electrovalence bands on nonpolar and semi-polarity GaN From so that the trimmed book body sent from the device for such as LED being manufactured on these platforms is polarization.By by semi-polarity and/ Or non-polar GaN-based LED is used for using in the projection display equipment of LCOS technologies or other light valves for needing polarised light, with Light loss associated LED will be minimized, the additional component without utilizing such as polarization recycler, and additional component meeting The complexity and cost of increase system.Traditional optical projection system illuminates figure usually using laser and/or LED as light source Picture.Generally, in projection systems, lasing light emitter provides better performance than LED light source.

Fig. 1 is the diagram for showing traditional optical projection system.As illustrated, blue laser, green laser and red laser Laser beam is combined into, then the laser beam is projected onto MEMS scanning mirrors.

In all conventional projection systems of optical projection system as shown in Figure 1, green second_harmonic generation (SHG) laser For providing green laser.Green laser still currently is sent without direct diode solution, this is forced using frequency multiplication 1060nm diode lasers, it is expensive, volume is big, the spectrum that is difficult to High Speed Modulation and sends is narrow and scheming Spot is produced as in.Further, since these devices need to use recurrent pulses lithium niobate (PPLN) to produce second harmonic, institute It is extremely low with the efficiency on the technology.

Firstly, there are the efficiency of 1060nm devices in itself.Secondly there are with directing the light to PPLN and exporting light from PPLN Related light coupling loss.Again, the conversion loss in PPLN be present.Finally there are with part is cooled into accurate temperature Related loss.

In order to manufacture the efficient display that battery life maximizes and cost, size, weight minimize, it is necessary to by system In minimum optical losses.The source of light loss in system includes but is not limited to, and comes from its transmission and is to rely on partially The loss of the optical element to shake.In many small projectors of such as micro projector, the micro- aobvious of high polarization sensitivity is used Show technology, such as LCOS or LCD.High polarization is usually required according to the essence of lcd technology based on LCOS regular display Light source.

In each embodiment, the invention provides blue and green Direct-type diode GaN base laser, and it is provided Height polarization output, single spatial mode formula, in arrive big spectral width, high efficiency and high modulation rate, this is for such as micro- The various projecting apparatus of projecting apparatus, DLP projector, display (for example, liquid crystal on silicon or " LCOS ") based on liquid crystal etc. and display Device is preferable.

It should be understood that by using high polarized light source in the projection display equipment provided by embodiment of the present invention, can incite somebody to action Maximizing optical efficiency, while cost of implementation minimizes and the selection to optical component has maximum flexibility.It is such as unpolarized , it is necessary to which complicated optical component is used to polarize regeneration, so as to improve unpolarized light source in LED traditional lighting source and its system Efficiency.By comparison, by forming blueness and green laser and/or LED on nonpolar or semipolar GaN, light output will By high degree of polarisation, so as to eliminate the needs to the additional optical for handling polarization.

As described in the present invention, the Direct-type diode laser with GaN base laser is used for blueness and green Light source.When laser is less than threshold value, traditional c faces GaN lasers send unpolarized or close to non-polarized light.With electric current Increase laser reach threshold value after, output light be changed into polarization.By comparison, it is non-according to being manufactured in for embodiment of the present invention Laser on polarity or semi-polarity GaN sends polarised light when less than threshold value, and with the increase polarization ratio increase of electric current.It is logical Cross and high polarized light source is used in projection display equipment, light efficiency can be maximized, while cost of implementation minimizes and to optics The selection of part has maximum flexibility.

In order to manufacture the efficient display that battery life maximizes and cost, size, weight minimize, it is necessary to make system In minimum optical losses.For LCOS systems, traditional LCOS generally shrink as far as possible it is small to meet small volume, And it is additionally operable to reduce cost.Therefore, for optical efficiency maximum in display and minimum power consumption, size and weight, Need lasing light emitter that there is high optical space brightness.

The spatial mode quality that traditional LED performances are gone on business, it is therefore desirable to big LCOS or LCD chip, and for small Type design is infeasible, because light can not be focused in small region.By comparison, according to embodiment of the present invention The Direct-type diode GaN base laser of blueness and green shows the single spatial mode formula of maximum throughput.

Embodiments of the present invention additionally provide the advantage for reducing spot.For example, the frequency multiplication used in legacy system 1060nm diode lasers produce narrow spectrum, and this can to produce spot in the picture.Institute in embodiment of the present invention The spectrum increase that the Direct-type diode visible lasers (for example, green laser) used provide is up to>100x, substantially subtract Lack the spot in image, and reduce the needs of the additional large component to costliness.

In addition, the frequency multiplication 1060nm diode lasers used in legacy system are poorly efficient, reason is generation two Subharmonic.Direct-type diode visible lasers used in the present invention provide the possibility of substantial higher efficiency, and With reduction optical component and the advantage of system dimension and weight.

As described above, typical small projector (for example, micro projector) is included with lower component:

Light source (laser or LED),

Optical component,

The micro-display that such as LCOS or DMD are shown,

Drive plate, and

Power supply (that is, battery or power supply adaptor).

Currently, blueness and green (can be red) LED are unpolarized, and this causes excessive light loss, and shows The spatial mode quality gone on business, and this needs big LCOS or LCD chip, and be infeasible for small design, this is Because light can not be focused on small region.Due to the separation of X and Y electrovalence bands on nonpolar and semi-polarity GaN so that from system The trimmed book body that the device made in such as LED on these platforms is sent is polarization.By by semi-polarity and/or non-polar GaN The LED of base is used in projection display equipment or other LCOS technologies, and the light loss related to unpolarized LED will be minimized, and The additional component of such as polarization recycler need not be utilized, and additional component can increase the complexity and cost of system.

Currently, still without the Direct-type diode solution for green laser transmitting, this is forced using frequency multiplication 1060nm diode lasers, and it is expensive, bulky, is difficult to High Speed Modulation and sends narrow spectrum and cause Spot is produced in the picture.Further, since these devices need to use recurrent pulse lithium niobate (PPLN) to produce second harmonic, Therefore the significant inefficiencies related to the technology.First, the efficiency of 1060nm devices in itself, secondly there are with directing the light to PPLN and light is exported into relevant light coupling loss from PPLN, again, the conversion loss in PPLN be present, finally there are with by portion Part is cooled to the relevant loss of accurate temperature.

High polarization is provided according to the Direct-type diode GaN base laser of the blueness of embodiment of the present invention and green Output, single spatial mode formula, in arrive big spectral width, high efficiency and high modulation rate, this is for the display based on liquid crystal Device is preferable.

Conventional method for frequency multiplication realizes high spatial brightness, but it can not conveniently realize high modulating frequency And image artifacts can be produced when attempting to realize.The modulating frequency in source is defined to~100MHz by this, wherein, it is necessary to utilize width Spend (simulation) modulation.As frequency quantity increases to~300MHz, pulse (numeral) can be used to modulate, which simplify system and disappeared Except the needs to look-up table.

Using the Direct-type diode solution provided by embodiment of the present invention, the modulation outside 300MHz can reach Frequency, and digital manipulation can be realized.Nonpolar and/or semi-polarity GaN base laser greatly ensure that the pole of Direct-type two The realization of the scheme of pipe green, therefore, it is possible to realize digital scan projector with micro lens.

Fig. 2A is the simplification figure for showing the projection arrangement according to embodiment of the present invention.The diagram is only example, its It should not unduly limit the scope of claim.One of ordinary skill in the art would recognize that many deformations, substitutions and modifications.Projection System 250 includes MEMS scanning mirrors 251, speculum 252, optical component 254, green laser diode 253, the pole of red laser two Pipe 256 and blue laser diode 255.

As an example, optical projection system 250 is micro projector.In addition to the part shown in Fig. 2A, optical projection system 250 Also include the housing with opening and the input interface for receiving one or more picture frames.Optical projection system 250 also includes Video processing module.In one embodiment, video processing module be electrically connected to for drive laser diode ASIC and MEMS scanning mirrors 251.

In one embodiment, laser diode forms lasing light emitter together with optical component 254.Green laser diode 253 are characterised by that wavelength is about 490nm to 540nm.Lasing light emitter is configured to by combination from blue laser diode, green The output of color laser diode and red laser diode produces laser beam.According to application, various types of light can be used Department of the Chinese Academy of Sciences's part come combine from laser diode output light.For example, the optical component can be color separation lens, prism, convergent lens Deng.In a particular embodiment, the laser beam of combination is polarized.

In one embodiment, laser drive module is set.To be there is provided in addition, laser drive module is used for adjustment Amount to the electric power of laser diode.For example, laser drive module is based on one from one or more picture frames or more Individual pixel produces three driving currents, and each in three driving currents is used to drive laser diode.Specific real Apply in mode, laser drive module is configured to produce the pulse-modulated signal that frequency range is about 50MHz to 300MHz.

MEMS scanning mirrors 251 are configured to laser beam projects to ad-hoc location by opening.For example, MEMS scanning mirrors 251 handle a pixel in special time on ad-hoc location corresponding with the pixel of image.With high frequency, scanned by MEMS The pixel pie graph picture that mirror 251 projects.

MEMS scanning mirrors 251 receive light by speculum 252 from lasing light emitter.As illustrated, the region near lasing light emitter Interior setting speculum 252.In addition, the optical component is used to laser beam being oriented to MEMS scanning mirrors 251.

It should be understood that optical projection system 250 also includes miscellaneous part, lasing light emitter and MEMS scanning mirrors 251 are such as electrically connected to Power supply.Miscellaneous part may include buffer storage, communication interface, network interface etc..

As described above, the key component of optical projection system 250 is LASER Light Source.Compared with traditional optical projection system, the present invention Embodiment use efficient laser diode.In a particular embodiment, blue laser diode is operated with unilateral mould. For example, blue laser diode is characterised by that spectral width is about 0.5nm to 2nm.In a particular embodiment, blueness swashs Optical diode is designed to be integrated in portable use (for example, embedded and set type micro projector), and small-sized 60mW 445nm single-mode output power is shown in TO-38 packaging parts.For example, blue laser efficiently operates, and in width Temperature range on need the power consumption of minimum, meet consumption projection display equipment, protection indicator and lighting device, biological instrument Requirement required for device and treatment and industrial imaging applications.According to each embodiment, blue laser is to be based on indium gallium nitrogen (InGaN) semiconductor technology and be manufactured on GaN base bottom.

In each embodiment, blue laser diode and green laser diode are manufactured using GaN material.Blueness swashs Optical diode can be semi-polarity or nonpolar.Similarly, green laser diode can be semi-polarity or nonpolar.Example Such as, GaAlInP materials can be used to manufacture for red laser diode.Such as, there is provided the following combination of laser diode, but can In the presence of other combinations:

- blue polarity+green non-polar+red * AlInGaP

- blue polarity+green semi-polarity+red * AlInGaP

- blue polarity+green polarity+red * AlInGaP

- blue semi-polarity+green non-polar+red * AlInGaP

- blue semi-polarity+green semi-polarity+red * AlInGaP

- blue semi-polarity+green polarity+red * AlInGaP

- blueness nonpolar+green non-polar+red * AlInGaP

Nonpolar+green semi-polarity+red * AlInGaP of-blueness

Nonpolar+green polarity+red * AlInGaP of-blueness

As an example, blue laser diode and green laser diode can be manufactured on m faces.In specific embodiment In, blue laser diode or green laser diode include the nitridation with the m faceted crystal surface regions for cutting (off-cut) Gallium basal component.In a specific embodiment, the cutting angle (offcut angle) is in -2.0 to -0.5 degree towards c faces Between.In a particular embodiment, gallium nitride substrates component is block GaN base bottom (it is characterized in that having semi-polarity or non-pole Property wafer surface areas) but it is also possible to be other substrates.In a specific embodiment, block GaN base bottom includes nitrogen and had Less than 105cm-2Surface dislocation density.Element nitride crystal or chip can include AlxInyGa1-x-yN, wherein 0≤x, y, x+y ≤1.In a detailed embodiment, element nitride crystal includes GaN but it is also possible to be other crystal.One or more real Apply in mode, GaN base bottom has threading dislocation (threading on substantially orthogonal on surface or inclined direction Dislocation), its density is about 105cm-2To about 108cm-2Between.Due to the orthogonal or tilted alignment of dislocation, so surface Dislocation density is below about 105cm-2.In a particular embodiment, device can be manufactured in the semi-polarity substrate gently cut.

In the embodiment that laser is manufactured in the orientation of { 20-21 } semi-polarity GaN surfaces, device has with cutting A part of overlapping the formed laser strip region for the crystal orientation surface region cut.In a specific embodiment, laser strip area Domain is characterised by chamber orientation in the projection substantially on the c directions substantially vertical with a directions.In specific embodiment In, laser strip region has first end and the second end.In a preferred embodiment, laser cavity is directed to be formed at { 20-21 } The substrate containing nitrogen and gallium on c directions on projection on, the substrate has a pair of cleavage illuminating apparatus structures in the end of chamber.When So, other deformations, modification may be present and replace.

In the embodiment that laser is manufactured in the orientation of non-polar m-surface GaN surface, device, which has to be overlapped in, to be cut The laser strip region that a part for the crystal orientation surface region cut is formed.In a particular embodiment, laser strip region It is characterised by chamber orientation in the projection substantially on the c directions substantially vertical with a directions.In a particular embodiment, Laser strip region has first end and the second end.In a preferred embodiment, laser cavity is directed to be formed contains nitrogen in m faces On the c directions in the substrate of gallium, the substrate has a pair of cleavage mirror structures in the end of chamber.Certainly, other changes may be present Shape, modification and replacement.

In a preferred embodiment, device has the first cleavage surface, is arranged in the first end in laser strip region;Second solution Reason face, it is arranged on second end in laser strip region.In one or more embodiments, the first cleavage surface is arranged essentially parallel to Second cleavage surface.Minute surface is formed in each cleavage surface.First cleavage surface includes the first minute surface.In a preferred embodiment, First minute surface is provided by the line and break process of top great-jump-forward line (cutting).Technique of ruling can use any suitable Technology, such as diamond line laser scribe or its combination.In a particular embodiment, the first minute surface includes reflection Coating.Reflectance coating is selected from silica, hafnium oxide, titanium dioxide, tantalum pentoxide, zirconium oxide and combinations thereof etc..According to Embodiment, the first minute surface may also include anti-reflection coating.Certainly, other deformations, modification may be present and replace.

Equally in a preferred embodiment, the second cleavage surface includes the second minute surface.According to embodiment, the second minute surface The line rule by top great-jump-forward and break process provide.Preferably, line is diamond line or laser scribe etc.. In a particular embodiment, the second minute surface includes reflectance coating, such as silica, hafnium oxide, titanium dioxide, five oxidations Tantalum, zirconium oxide and combinations thereof etc..In a particular embodiment, the second minute surface includes anti-reflection coating.Certainly, other may be present Deformation, modification and replacement.

In a particular embodiment, laser strip has length and width.Length is at about 50 microns to about 3000 microns In the range of.Band is also with the width in the range of about 0.5 micron to about 50 microns but it is also possible to be other sizes.Having In the embodiment of body, although width can vary slightly, the size of width is substantially constant.Usually using existing skill The mask and etching technics that are commonly used in art forms width and length.

In a particular embodiment, the invention provides can launch in ridge laser embodiment 501nm and The replaceable device architecture of bigger light.The device is provided with one or more of following epitaxial growth element, but not office It is limited to this:

N-GaN coating, there is 100nm to 5000nm thickness, and Si doped level is 5E17 to 3E18cm-3

N sides sch layer, is made up of InGaN, wherein the molar fraction of indium be 3% to 10% between, and thickness be 20nm extremely 100nm

Multiple Quantum well active district layers, by being divided by the GaN barrier layers that thickness is more than 2.5nm (alternatively, reaching about 8nm) From at least two 2.0-8.5nm InGaN SQWs composition

P sides sch layer, is made up of InGaN, wherein the molar fraction of indium be 1% to 10% between, and thickness be 15nm extremely 100nm

Electron-blocking layer, it is made up of AlGaN, between wherein the molar fraction of aluminium is 12% to 22%, and thickness is 5nm To 20nm, and doped with Mg

P-GaN coating, there is 400nm to 1000nm thickness, and Mg doped level is 2E17cm-3To 2E19cm-3

P++-GaN contact layers, there is 20nm to 40nm thickness, and Mg doped level is 1E19cm-3To 1E21cm-3

In a particular embodiment, laser device is manufactured in { 20-21 } semi-polarity substrate containing Ga.However, it is understood that Laser device can also be manufactured in other kinds of substrate, for example, in the substrate containing Ga of nonpolar orientation.

Although widely using the white light source based on red source, green source and blue sources, other combinations are also feasible 's.According to the embodiment of the present invention, the light source used in optical projection system by yellow light sources and red light source, green light source and Blue-light source is combined.For example, the addition of yellow light sources improves the chromatic characteristic of the projection of RGB bases and display system (for example, permitting Perhaps broader colour gamut).In a particular embodiment, RGYB light sources are used for optical projection system.Yellow light sources can be by gallium nitride The yellow laser diode of material or AlInGaP material manufactures.In each embodiment, yellow light sources can take with polarity To, it is nonpolar orientation or half-shadow sexual orientation.It should be understood that the light of other colors can also be used according to the optical projection system of the present invention Source.For example, other colors include cyan, carmetta and other colors.In a particular embodiment, the laser of different colours Diode is packaged separately.In another embodiment, the laser diode of two or more different colours is mutually encapsulated into Together.In still another embodiment, the laser diode of two or more different colours is manufactured in identical substrate.

Fig. 2 B are to be manufactured in the detail section according to the laser device 200 in embodiment of the present invention { 20-21 } substrate View.The diagram is only example, should not irrelevantly limit the scope of this paper claims.Those skilled in the art should realize To many deformations, substitutions and modifications.As illustrated, laser device includes gallium nitride substrates 203, under it with n-type metal Back contacts area 201.In a particular embodiment, back metal contact area by it is all as is noted below those and other close Suitable material manufacture.The further detail below of contact zone can describe in further detail below in this specification middle acquisition in the whole text.

In a particular embodiment, device also has the n-type gallium nitride layer 205 being laminated, active area 207 and stacking P-type gallium nitride layer (is configured to laser strip region).In a particular embodiment, each in these regions is had using metal Chemical machine vapour deposition (MOCVD), molecular beam epitaxy (MBE) or other be suitable to GaN growth growth technology at least A kind of epitaxial deposition technique is formed.In a particular embodiment, epitaxial layer is the high quality extension for being laminated n-type gallium nitride layer Layer.In some embodiments, for the high quality layer doped with such as Si or O to form n-type material, wherein doping concentration is about 1016cm-3To 1020cm-3Between.

In a particular embodiment, the depositing n-type Al in substrateuInvGa1-u-vN layers, wherein 0≤u, v, u+v≤1. In specific embodiment, carrier density can be about 1016cm-3To 1020cm-3Between.It can be carried out using MOCVD or MBE Deposition.Certainly, other deformations, modification may be present and replace.

As an example, block GaN base bottom is positioned on the pedestal in MOCVD reactors.Reactor is closed, be evacuated with And after backfill reactor (or being constructed using load lock chamber) to atmospheric pressure, pedestal is heated in the case where the gas containing nitrogen be present Between about 900 degrees Celsius and about 1200 degrees Celsius.In a specific embodiment, in the case where flowing has ammonia Pedestal is heated to about 1100 degrees Celsius.Start in carrier gas such as trimethyl gallium (TMG) or triethyl-gallium (TEG) containing gallium The flowing of metallorganic precursors, total flow velocity are between about 1 to 50 sccms (sccm).Carrier gas can include Hydrogen, helium, nitrogen or argon gas.The flow velocity of Group V precursor (ammonia) and Group III precursor (trimethyl gallium, triethyl-gallium, trimethyl indium, Trimethyl aluminium) flow velocity ratio between growth period is about 2000 to about 12000.Between about 0.1sccm and 10sccm Overall flow rate start carrier gas in disilane flowing.

In a particular embodiment, laser strip region is made up of p-type gallium nitride layer.In a particular embodiment, swash Striation is provided by the etching technics selected from dry etching or wet etching.In a preferred embodiment, etching technics It is dry method but it is also possible to be others.As an example, dry etch process be using chlorine-bearing compound inductivity combined process or It is the reactive ion etching process using similar chemicals.In addition, as an example, chlorine-bearing compound it is generally derivative from chlorine etc. and Come.Device also has the dielectric region of stacking, and it exposes contact zone 213.In a particular embodiment, dielectric region is such as The oxide or silicon nitride of silica are but it is also possible to be others.Contact zone engages with laminated metal layer 215.Laminated metal Layer is the sandwich construction for including palladium and golden (Pd/Au), platinum and gold (Pt/Au), nickel and gold (Ni/Au) but it is also possible to be others. Certainly, other deformations, modification may be present and replace.

In a particular embodiment, laser device has active area 207.It is active according to one or more embodiments Area may include 1 to 20 quantum well regions.As an example, by n-type AluInvGa1-u-vN layers deposit predetermined amount of time and reached pre- After determining thickness, active layer is deposited.Active layer can be made up of multiple SQWs, have 2-10 SQW.SQW can be by InGaN is formed, and GaN barrier layers separate them.In other implementations, well layer (potential well layer) and barrier layer (gesture Barrier layer) include Al respectivelywInxGa1-w-xN and AlyInzGa1-y-zN, wherein, 0≤w, x, y, z, w+x, y+z≤1, wherein w<u,y And/or x>V, z so that the band gap of well layer is less than the band gap of barrier layer and n-layer.Well layer and barrier layer are respectively provided between about 1nm With the thickness between about 20nm.The composition and structure of active layer are selected as providing the luminous of preselected wavelength.Active layer can be Undoped (or unintentionally adulterate), or can be n-type or p-type doping.Of course, it is possible to exist other deformations, modification and Replace.

In a particular embodiment, active area may also include electronics baffle area and separation restricted type heterojunction structure.One In a little embodiments, electron-blocking layer is preferably deposited.Electron-blocking layer can include AlsIntGa1-s-tN, wherein 0≤s, t s + t≤1, and there is the band gap wider than active area, and p-type can be doped to.In a specific embodiment, electron-blocking layer Including AlGaN.In another embodiment, electron-blocking layer includes AlGaN/GaN superlattice structures, and it includes AlGaN and GaN Alternating layer, every layer of thickness having between about 0.2nm and about 5nm.Certainly, other deformations, modification may be present and replace.

It is noted that p-type gallium nitride structure is deposited on electron-blocking layer and active layer.P-type layer can be doped with level Between about 1016cm-3With 1022cm-3Between Mg, and can have thickness between about 5nm and about 1000nm.P-type layer is most The 1-50nm of outside more heavily adulterates than the other parts of this layer, enables to improve electrical contact.In specific embodiment party In formula, laser strip is provided by the etching technics in dry etching or wet etching.In a preferred embodiment, carve Etching technique is dry method but it is also possible to be other types.Device also has the dielectric region of stacking, and it exposes contact zone 213. In specific embodiment, dielectric region be the oxide of such as silica but it is also possible to be other materials, such as nitrogenize Silicon.Certainly, other deformations, modification may be present and replace.

It should be understood that the light source of projecting apparatus 250 can also include one or more LED.Fig. 2 C are shown with LED light source Projecting apparatus simplification figure.The diagram is only example, should not irrelevantly limit the scope of claim.People in the art Member is it is to be realized that many deformations, substitutions and modifications.As an example, blue led and green LED are by the material system containing gallium nitride Make.In a specific embodiment, blue led is characterised by nonpolar orientation.In another embodiment, it is blue LED is characterised by half-shadow sexual orientation.

Fig. 3 A are the alternatives for showing the projection arrangement according to embodiment of the present invention.The diagram is only example, no The scope of claim should irrelevantly be limited.Those skilled in the art will appreciate that many deformations, substitutions and modifications.In Fig. 3 A In, projection arrangement swashs including MEMS scanning mirrors, speculum, light converting member, red laser diode, blue diode and green Optical diode.Shown blue laser diode and green laser diode is integrated into single package.For example, blue laser two Pole pipe and green laser diode share same substrate and surface.It is defeated from blue laser diode and green laser diode Go out out of common surface plane and send.It should be understood that by making blue laser diode and green laser diode package one Rise, can substantially reduce the size and cost (for example, less part) of projection arrangement.

In addition, green laser diode and blue laser diode are characterised by high efficiency.For example, the pole of blue laser two Pipe and green laser diode are by bulk gallium nitride material manufacture.Blue laser diode can be nonpolar or semipolar orientation 's.Can be nonpolar or semi-polar as green laser diode-like.Such as, there is provided laser diode with the following group Close, but other combinations may be present:

- blue polarity+green non-polar+red * AlInGaP

- blue polarity+green semi-polarity+red * AlInGaP

- blue polarity+green polarity+red * AlInGaP

- blue semi-polarity+green non-polar+red * AlInGaP

- blue semi-polarity+green semi-polarity+red * AlInGaP

- blue semi-polarity+green polarity+red * AlInGaP

- blueness nonpolar+green non-polar+red * AlInGaP

Nonpolar+green semi-polarity+red * AlInGaP of-blueness

Nonpolar+green polarity+red * AlInGaP of-blueness

In one embodiment, green laser diode is characterised by wavelength between 480nm~540nm, and this is not It is same as carrying out the traditional mode of production device of frequency multiplication using infra-red laser diode (that is, launch wavelength is about 1060nm) and using SHG Part.

Fig. 3 B are the simplification figures for showing the laser diode being packaged together according to embodiment of the present invention.The diagram Only example, it should not irrelevantly limit the scope of claim.Those skilled in the art will appreciate that many deformations, replacement And modification.As shown in Figure 3 B, two laser diodes are arranged on single package.For example, shown laser 1 is blueness Laser diode, laser 2 are green laser diodes.The output of combination laser device can be carried out using optical component.

The output of two lasers shown in Fig. 3 B can be combined in many ways.For example, such as color separation lens, ripple The optical component led can be used for the output of the laser 1 and laser 2 shown in combination.

In other embodiments, blue laser diode and green laser diode are single chip integrated.Fig. 3 C are to show The diagram in the section of the active area of the emission wavelength that there is classification (gradient) to be distributed according to embodiment of the present invention is gone out.The figure Show only example, should not irrelevantly limit the scope of claim.Those skilled in the art will appreciate that many deform, replace Change and change.As shown in Figure 3 C, for example, using the active area with different transmitting gradients.Ridged at active area different piece Waveguide is used to send different wavelength.

Fig. 3 D are the simplification figures in the section for showing multiple active areas according to embodiment of the present invention.The diagram is only Example, it should not irrelevantly limit the scope of claim.Those skilled in the art will appreciate that many deform, replace and repair Change.In addition, each active area is related to specific wavelength.

It should be understood that the light source of projecting apparatus 300 can also include one or more LED.Fig. 3 E are shown with LED light source Projecting apparatus simplification figure.The diagram is only example, should not irrelevantly limit the scope of claim.People in the art Member is it is to be realized that many deformations, substitutions and modifications.As an example, blue led and green LED are by the material system containing gallium nitride Make.In a specific embodiment, blue led is characterised by nonpolar orientation.In another embodiment, it is blue LED is characterised by half-shadow sexual orientation.

Fig. 4 A are the simplification figures for showing the projection arrangement according to embodiment of the present invention.The diagram is only example, no The scope of claim should irrelevantly be limited.Those skilled in the art will appreciate that many deformations, substitutions and modifications.Such as Fig. 4 A Shown in, blue laser diode, green laser diode and red laser diode are integrated in light source 401.Light source 401 is The combination of the output of each laser diode.Combination light is projected onto on speculum, and combination light is reflexed to MEMS scanning mirrors by it On.It should be understood that by providing laser diode in same packaging part, the size and cost of light source 401 can be reduced.For example, carry Supply following laser diode to combine, but other combinations may be present:

- blue polarity+green non-polar+red * AlInGaP

- blue polarity+green semi-polarity+red * AlInGaP

- blue polarity+green polarity+red * AlInGaP

- blue semi-polarity+green non-polar+red * AlInGaP

- blue semi-polarity+green semi-polarity+red * AlInGaP

- blue semi-polarity+green polarity+red * AlInGaP

- blueness nonpolar+green non-polar+red * AlInGaP

Nonpolar+green semi-polarity+red * AlInGaP of-blueness

Nonpolar+green polarity+red * AlInGaP of-blueness

Fig. 4 A are the simplification figures for showing the laser diode for being integrated into single package according to embodiment of the present invention. The diagram is only example, should not irrelevantly limit the scope of claim.Those skilled in the art will appreciate that many changes Shape, substitutions and modifications.For example, laser 1 can be green laser diode, laser 2 can be red laser diode, with And laser 3 can be blue laser diode.According to application, green laser diode can be manufactured in semi-polarity, it is nonpolar or In the substrate containing gallium of polarity.Similarly, blue laser diode can be formed at semi-polarity, nonpolar or polarity contain gallium Substrate on.

It should be understood that had a wide range of applications according to each optical projection system of the present invention.It is above-mentioned in each embodiment Optical projection system is integrated in cell phone, camera, personal computer, portable computer and other electronic installations.

Fig. 5 A are the simplification figures for showing the DLP projection arrangements according to embodiment of the present invention.The diagram is only example, The scope of claim should not irrelevantly be limited.Those skilled in the art will appreciate that many deformations, substitutions and modifications.Such as figure Shown in 5A, wherein, projection arrangement includes:Light source, convergent lens, colour wheel, shaping lens and Digital Light Processor (DLP) plate with And projecting lens.In addition, DLP board includes processor, memory and DMD (DMD).

As an example, colour wheel can include the fluorescent material for being used to change the color of the light sent from light source. In specific embodiment, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, indigo plant Color etc.).In the exemplary embodiment, projecting apparatus includes the light source containing blue-light source and red light source.Colour wheel includes being used for The slit of blue light and the region containing fluorophor, it is somebody's turn to do the region containing fluorophor and is used to convert blue light into green light. In operation, blue-light source (for example, blue laser diode or blue led) provides blue light and from containing fluorophor by slit Region in excite green light;Red light is provided independently in red light source.Green light transmissive from fluorophor crosses colour wheel, or Reflected back by colour wheel.In any case, green light is collected by light source part and is re-oriented micro-display.Through slit Blue light is also directed at micro-display.Blue-light source can be the laser two being manufactured on the GaN of nonpolar or semipolar orientation Pole pipe and/or LED.In some cases, by the way that blue laser and blue led are combined, chromatic characteristic can be improved.Green light Replaceable light source can include green laser diode and/or green LED, its by nonpolar or semipolar the base containing Ga Bottom manufactures.In some embodiments, including LED, laser and/or to change some combinations of fluorophor of green light be beneficial 's.It should be understood that can be that color light source combines with other of its colour wheel.

As another example, colour wheel can include a variety of fluorescent materials.For example, colour wheel can include and blue-light source group The green-emitting phosphor and red-emitting phosphors of conjunction.In a particular embodiment, colour wheel includes multiple regions, and each region corresponds to Specific color (for example, red, green, blueness etc.).In the exemplary embodiment, projecting apparatus includes containing blue-light source Light source.Colour wheel includes the slit and two regions containing fluorophor for blue laser, and the two contain the region of fluorophor It is respectively used to convert blue light into green light and converts blue light into red light.In operation, blue-light source (for example, Blue laser diode or blue led) provide blue light by slit and excite green light and red from the region containing fluorophor Coloured light.Green light and red light from fluorophor can reflect back transmitted through colour wheel, or by colour wheel.In any case, Green light and red light are collected by optical component and are re-oriented micro-display.Blue-light source can be manufactured in it is nonpolar or half Laser diode or LED on the GaN of polarity orientation.It should be understood that can be that color light source combines with other of its colour wheel.

As another example, colour wheel can include blue emitting phophor material, green phosphor material and red-emitting phosphors material Material.For example, colour wheel can include blue emitting phophor, green-emitting phosphor and the red-emitting phosphors with ultraviolet (UV) combination of light sources. In specific embodiment, colour wheel includes multiple regions, and each region corresponds to specific color (for example, red, green, indigo plant Color etc.).In the exemplary embodiment, projecting apparatus includes the light source containing UV light sources.Colour wheel contains fluorophor including three Region, it is respectively used to that UV light is converted into blue light, UV light is converted into green light and UV light is converted into red light.Grasping In work, colour wheel sequentially sends blue light, green light and red light from the region containing fluorophor.Blueness from fluorophor Light, green light and red light can reflect back transmitted through colour wheel, or by colour wheel.In any case, blue light, green light and Red light is collected by optical component and is re-oriented micro-display.UV light sources can be manufactured in nonpolar or semipolar orientation Laser diode or LED on GaN.It should be understood that can be that color light source combines with other of its colour wheel.

Shown light source can be based on made of laser.In one embodiment, the output from light source is sharp Light beam, the laser beam are characterised by substantially white.In one embodiment, combination of light sources is from the pole of blue laser two The light of pipe, green laser diode and red laser diode output.For example, blue laser diode, green laser diode Single package as described above can be integrated into red laser diode.Others combination is also feasible.For example, blueness swashs Optical diode and green laser diode share a packaging part, and red laser diode is individually packaged.In the embodiment party In formula, laser can be modulated individually, so that color has time sequencing, thus not need colour wheel.Blueness swashs Optical diode can be polarity, semi-polar and nonpolar.Similarly, green laser diode can be polarity, half It is polarity and nonpolar.For example, blueness and/or green diode can be manufactured by the bulk substrate containing gallium nitride material.Example Such as, there is provided following laser diode combination, but other combinations may be present:

- blue polarity+green non-polar+red * AlInGaP

- blue polarity+green semi-polarity+red * AlInGaP

- blue polarity+green polarity+red * AlInGaP

- blue semi-polarity+green non-polar+red * AlInGaP

- blue semi-polarity+green semi-polarity+red * AlInGaP

- blue semi-polarity+green polarity+red * AlInGaP

- blueness nonpolar+green non-polar+red * AlInGaP

Nonpolar+green semi-polarity+red * AlInGaP of-blueness

Nonpolar+green polarity+red * AlInGaP of-blueness

In fig. 5, DLP projection system once projects a kind of color (for example, red, green or blue using colour wheel to DMD Color) light.The reason for needing colour wheel, is that light source continuously provides white light.It should be understood that due in embodiments of the present invention It is middle to use solid-state devices as light source, so not needing the colour wheel shown in Fig. 5 A according to the DLP projector of the present invention.Fig. 5 B are Show the simplification figure of the DLP projector according to embodiment of the present invention.The diagram is only example, should not irrelevantly be limited The scope of claim.Those skilled in the art can be appreciated that many deformations, replace and change.

In interchangeable embodiment, light source includes single laser diode.For example, light source includes output blue laser The blue laser diode of beam.Light source also includes the one or more optical components for being used to change the blue color of laser beam.For example, One or more optical components include fluorescent material.Laser beam excited fluophor material to produce the light emitting source of basic white, It, which turns into, is used for the light source that projection is shown.In this embodiment, it is necessary to which colour wheel arranges blue frame, green frame and red frame To DLP order.

Optical projection system 500 includes light source 501, light source controller 502, optical component 504 and DLP chips 505.Light source 501 are configured as launching colourama to DMD 503 by optical component 504.More specifically, light source 501 includes color laser two Pole pipe.For example, laser diode includes red laser diode, blue laser diode and green laser diode.Predetermined Time interval, single laser diode opened, and other laser diodes are closed, single so as to launch to DMD 503 The laser beam of color.Light source controller 502 provides control signal to light source 501, to be swashed based on predetermined frequency and sequential switching The opening and closing of optical diode.For example, the switching of laser diode is similar to the function of the colour wheel shown in Fig. 5 A.

Fig. 6 is the simplification figure for showing the 3 chip DLP projection systems according to embodiment of the present invention.The diagram is only Example, it should not irrelevantly limit the scope of claim.Those skilled in the art can be appreciated that many deformations, replace and repair Change.As shown in Figure 5 A, 3 chip DLP projection systems include light source, optical component, multiple DMD and color wheel system.As schemed Show, each DMD is related to particular color.

In each embodiment, white light beam includes the basic white laser beam provided by light source.In an implementation In mode, the output from light source is laser beam, and the laser beam is characterised by essentially white.In one embodiment, The light that combination of light sources exports from blue laser diode, green laser diode and red laser diode.For example, blue laser Diode, green laser diode and red laser diode can be integrated into single package as described above.Others combination It is and feasible.For example, blue laser diode and the shared packaging part of green laser diode, and red laser diode It is individually packed.Blue laser diode can be polarity, semi-polar and nonpolar.Similarly, the pole of green laser two Pipe can be polarity, semi-polar and nonpolar.For example, blueness and/or green diode can be by containing gallium nitride material Bulk substrate manufacture.Such as, there is provided following laser diode combination, but other combinations may be present:

- blue polarity+green non-polar+red * AlInGaP

- blue polarity+green semi-polarity+red * AlInGaP

- blue polarity+green polarity+red * AlInGaP

- blue semi-polarity+green non-polar+red * AlInGaP

- blue semi-polarity+green semi-polarity+red * AlInGaP

- blue semi-polarity+green polarity+red * AlInGaP

- blueness nonpolar+green non-polar+red * AlInGaP

Nonpolar+green semi-polarity+red * AlInGaP of-blueness

Nonpolar+green polarity+red * AlInGaP of-blueness

In interchangeable embodiment, light source includes single laser diode.For example, light source includes output blue laser The blue laser diode of beam.Light source also includes the one or more optical components for being used to change the blue color of laser beam.For example, One or more optical components include fluorescent material.

It should be understood that light source can include laser diode and/or LED.In one embodiment, light source includes different face The laser diode of color.For example, light source can additionally include the glimmering of the color for being used for the light that change is sent from laser diode Body of light material.In another embodiment, light source includes one or more color LEDs.In yet another embodiment, light source includes Laser diode and LED.For example, light source can include the fluorophor for being used to change the color of laser diode and/or LED light Material.

In each embodiment, laser diode is used in 3D display application.Generally, 3D display system is dependent on vertical Body displaying principle, wherein, stereo display technique uses discrete device, so that everyone watches left eye and the right eye offer to people The scene of different images.The example of the technology includes stereographic images (anaglyph image) and polarising glass.Fig. 7 is to show The simplification figure for the 3D display for being related to the polarization image after being filtered by polarising glass is gone out.As illustrated, pass through polarising glass, left eye Different images is perceived with right eye.

Generally include by RealD CinemaTMThe conventional polarization glasses of the circular polarization glasses used in many cinemas It is widely accepted.Another image separation is provided by interference light filter technology.For example, in glasses and projecting apparatus in it is special Interference light filter constitute the major part of the technology and thus gain the name.Visual chromatic spectrum is divided into six narrow by filter Two in band-red area;In green area two in two and blue region (in order to which this is described, referred to as R1, R2, G1, G2, B1 and B2).R1, G1 and B1 wavestrip are used for the image of an eyes, and R2, G2 and B2 are used for another eyes.Human eye It is extremely sensitive for this trickle SPECTRAL DIVERSITY, therefore the technology utilizes the only slight aberration between two just can Produce full color 3D rendering.Sometimes, the technology is described as " super stereoscopic photograph ", because it is shone in conventional stereo The advanced form of the spectrum multiplexing of the core of chip technology.In a particular embodiment, using following wavelength group:

Left eye:Red 629nm;Green 532nm;Blue 446nm

Right eye:Red 615nm;Green 518nm;Blue 432nm

In each embodiment, the invention provides the optical projection system for projecting 3D rendering, wherein using laser two Pole pipe provides basic RGB color.Fig. 8 is the simplification figure for showing the 3D optical projection systems according to embodiment of the present invention.Should Diagram is only example, should not irrelevantly limit the scope of claim.Those skilled in the art will appreciate that many deformations, Replace and change.As shown in Figure 8, optical projection system includes projecting apparatus 801.Projecting apparatus 801 is configured as projection and an eyes (for example, left eye) related image.Projecting apparatus 801 includes the first light source.First light source includes first group of laser diode:It is red Laser diode, green laser diode and blue laser diode.Each laser diode is related to specific wavelength.Example Such as, red laser diode is configured as sending the laser beam for being characterised by 629nm wavelength, and green laser diode is configured as The laser beam for being characterised by 532nm wavelength is sent, and blue laser diode is configured as sending and is characterised by 446nm wavelength Laser beam.It should be understood that other wavelength are also feasible.

In each embodiment, blue laser diode is characterised by nonpolar orientation or half-shadow sexual orientation.For example, Blue laser diode is manufactured by the substrate containing gallium nitride.In a specific embodiment, blue laser diode by Bulk substrate materials manufacture.Similarly, green laser diode can also be manufactured by the substrate containing gallium nitride.For example, green swashs Optical diode is characterised by nonpolar orientation or half-shadow sexual orientation.

It should be understood that colourama can also be provided using color LED for projection element.For example, substituted using red LED Red laser diode provides red light.Similarly, the LED of a variety of colors and/or laser diode is interchangeable is used as light source. The light color of the light sent from LED and/or laser diode can be changed using fluorescent material.

Projecting apparatus 802 is configured as projecting the image related to another eyes (for example, right eye).Secondary light source includes second Group laser diode:Red laser diode, green laser diode and blue laser diode.Each laser diode with Specific wavelength is related, and each wavelength is different from the wavelength of the respective laser diodes of the first light source.For example, red laser Diode is configured as sending the laser beam for being characterised by 615nm wavelength, and green laser diode, which is configured as sending feature, to exist It is configured as sending the laser beam for being characterised by 432nm wavelength in the laser beam of 518nm wavelength, and blue laser diode. It should be understood that other wavelength are also feasible.

The projecting apparatus 801 and 802 shown in Fig. 8 is positioned as away from each other, it should be appreciated that two projecting apparatus can be integral Ground is in a housing unit.In addition to light source and image source, projecting apparatus also includes being used for the figure from two projecting apparatus As assembling optical component on the screen at the same.

According to specific application, various types of filters can be used to be carried out by beholder to the image projected Filter.In one embodiment, using bandpass optical filter.For example, bandpass optical filter only allows one group of RGB color wavelength to be delivered to Eyes.In another embodiment, using notch filter, wherein, notch filter will allow except specific group RGB color ripple Essentially all of wavelength outside length is delivered to eyes.There can also be other embodiments.

In some embodiments, the invention provides liquid crystal on silicon (LCOS) optical projection system.Fig. 9 is shown according to this The simplification figure of the LCOS optical projection systems 900 of invention embodiment.The diagram is only example, without should irrelevantly limit right It is required that scope.Those skilled in the art will appreciate that many deformations, replacement and modification.As shown in figure 9, green laser diode By optical splitter 901 green laser is provided to green LCOS;Blue laser diode is provided by optical splitter 903 to blue LCOS Blue laser;And red laser diode provides red laser by optical splitter 904 to red LCOS.Each LCOS is used for shape The image for the predetermined single color that the corresponding laser diodes of Cheng Youqi provide, and x cubic parts 902 combine single color Image.Coloured image after combination is projected onto on lens 906.

In each embodiment, one or more laser diodes used in optical projection system 900 are characterised by Half-shadow sexual orientation or nonpolar orientation.In one embodiment, laser diode is manufactured by bulk substrate.Specifically implementing In mode, blue laser diode and green laser diode are manufactured by the substrate containing gallium nitride.It should be understood that it can also use Color LED to provide colourama for projection element.For example, red LED can be used for replacement red laser diode red to provide Coloured light.Similarly, the LED of a variety of colors and/or laser diode is interchangeable is used as light source.Fluorescent material can be used for change from The light color for the light that LED and/or laser diode are sent.

LCOS optical projection systems 900 include three panels.In alternative embodiments, the invention provides with single The optical projection system of LCOS panel.Red laser diode, green laser diode and blue laser diode are aligned to red Laser beam, green laser beam and blue laser beam are collimated on single LCOS.Laser diode is pulse modulation, from And make it that only one laser diode is powered within the given time, so as to which LCOS is illuminated by single color.It should be understood that due to Using the laser diode of colour, so not needed according to the LCOS optical projection systems of the present invention in traditional LC OS optical projection systems is made Single white light is divided into the beam splitter of the light beam of a variety of colors.In each embodiment, institute in single LCOS optical projection systems The one or more laser diodes used are characterised by half-shadow sexual orientation or nonpolar orientation.In one embodiment, Laser diode is manufactured by bulk substrate.In a particular embodiment, blue laser diode and green laser diode by Substrate manufacture containing gallium nitride.In each embodiment, the construction shown in Fig. 9 is also used in silicon-based ferroelectric liquid crystal (FLCOS) in system.For example, the panel shown in Fig. 9 can be FLCOS panels.

Although being presented above the complete description of embodiment, can use various modifications, replacing structure and Equivalent.Therefore, above description and example should not be considered as limiting the scope of the present invention, and the scope of the present invention is by appended power Profit is required to limit.

Claims (28)

1. a kind of optical projection system, including:
Interface, for receiving image or vision signal;
Light source, it is included in the green laser diode of 490nm~540nm work in wavelength ranges, the green laser diode It is arranged on mounting substrate and a surface, the mounting substrate includes gallium nitride material, and the surface has { 20-21 } half-shadow Sexual orientation, the green laser diode has on said surface is orientated the laser characterized by the chamber in the projection in c directions Bar region;And
Power supply, it is electrically connected to the light source.
2. optical projection system according to claim 1, further comprises:
Light source with one or more light emitting diodes.
3. optical projection system according to claim 1, further comprises:Optical component, swash for combining from the green The output of optical diode and blue laser diode.
4. optical projection system according to claim 1, wherein, in addition to:
Red laser diode.
5. optical projection system according to claim 1, further comprises:MEMS scanning mirrors, it is electrically connected to the power supply.
6. optical projection system according to claim 1, further comprises:
Digital light process chip (DLP), including digital mirror device, the digital light process chip are electrically connected to the power supply.
7. optical projection system according to claim 1, further comprises:Convergent lens, combination come from the green laser two The light output of pole pipe and blue laser diode.
8. optical projection system according to claim 1, further comprises:Color separation lens, combination come from the green laser two The light output of pole pipe and blue laser diode.
9. optical projection system according to claim 1, further comprises:
Wavelength regulation module, including fluorescent material, fluorescent material described in the light source activation is to form colored hair light source.
10. optical projection system according to claim 9, further comprises:
Digital light process chip, including digital mirror device, it is electrically connected to the power supply.
11. optical projection system according to claim 1, further comprises:
One or more liquid crystal on silicon (LCOS) panels, are electrically connected to the power supply.
12. optical projection system according to claim 1, further comprises:
Colour wheel, including multiple wavelength regulation parts, the color for the light that the colour wheel regulation is sent from the light source.
13. optical projection system according to claim 12, wherein, the colour wheel includes fluorescent material, the fluorophor material The color for the light that material regulation is sent from the light source.
14. optical projection system according to claim 1, wherein, the light source is additionally included in 430nm~480nm wave-length coverages The blue laser diode of interior work, the blue laser diode is arranged on the mounting substrate and the surface, described Blue laser diode has on said surface is orientated the laser strip region characterized by the chamber in the projection in c directions.
15. a kind of optical projection system, including:
Interface, for receiving image or vision signal;
Light source, the light source are included in the blue laser diode of 430nm~480nm wave-length coverages work, the blue laser Diode is arranged on mounting substrate and a surface, and the mounting substrate includes gallium nitride material, and the surface has { 20- 21 } half-shadow sexual orientation, the blue laser diode, which has to be orientated by the chamber in the projection in c directions on said surface, to be characterized Laser strip region;And
Power supply, it is electrically connected to the light source.
16. optical projection system according to claim 15, further comprises:
Light source with one or more light emitting diodes.
17. optical projection system according to claim 15, further comprises:Optical component, the blueness is come from for combining The output of laser diode and green laser diode.
18. optical projection system according to claim 15, wherein, in addition to:
Red laser diode.
19. optical projection system according to claim 15, further comprises:MEMS scanning mirrors, it is electrically connected to the power supply.
20. optical projection system according to claim 15, further comprises:
Digital light process chip (DLP), including digital mirror device, the digital light process chip are electrically connected to the power supply.
21. optical projection system according to claim 15, further comprises:Convergent lens, combination come from the blue laser The light output of diode and green laser diode.
22. optical projection system according to claim 15, further comprises:Color separation lens, combination come from the blue laser The light output of diode and green laser diode.
23. optical projection system according to claim 15, further comprises:
Wavelength regulation module, including fluorescent material, fluorescent material described in the light source activation is to form colored hair light source.
24. optical projection system according to claim 23, further comprises:
Digital light process chip, including digital mirror device, it is electrically connected to the power supply.
25. optical projection system according to claim 15, further comprises:
One or more liquid crystal on silicon (LCOS) panels, are electrically connected to the power supply.
26. optical projection system according to claim 15, further comprises:
Colour wheel, including multiple wavelength regulation parts, the color for the light that the colour wheel regulation is sent from the light source.
27. optical projection system according to claim 26, wherein, the colour wheel includes fluorescent material, the fluorophor material The color for the light that material regulation is sent from the light source.
28. optical projection system according to claim 1, wherein, the light source is additionally included in 490nm~540nm wave-length coverages The green laser diode of interior work, the green laser diode is arranged on the mounting substrate and the surface, described Green laser diode has on said surface is orientated the laser strip region characterized by the chamber in the projection in c directions.
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9557013B2 (en) 2012-08-01 2017-01-31 Nec Display Solutions, Ltd. Illumination optical system and projection display apparatus
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
JP2014126753A (en) * 2012-12-27 2014-07-07 Seiko Epson Corp Head-mounted display
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9826203B2 (en) * 2014-09-08 2017-11-21 Intel Corporation Method and system for controlling a laser-based lighting system
US10070016B2 (en) 2016-02-16 2018-09-04 Microvision, Inc. Multi-stripes lasers for laser based projector displays
CN107561725A (en) * 2016-12-07 2018-01-09 北京数科技有限公司 Multiplexing apparatus and the mechanical-optical setup for laser three-dimensional projection
CN108737805A (en) * 2018-07-09 2018-11-02 北京数科技有限公司 A kind of ray machine projecting method, device and smartwatch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101138091A (en) * 2005-03-10 2008-03-05 加利福尼亚大学董事会 Technique for the growth of planar semi-polar gallium nitride
CN101308896A (en) * 2007-05-17 2008-11-19 住友电气工业株式会社 Gan substrate, and epitaxial substrate and semiconductor light-emitting device employing the substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3096638B2 (en) * 1996-07-19 2000-10-10 三洋電機株式会社 Stereoscopic image display device
AU7650198A (en) * 1997-04-30 1998-11-24 Ldt Gmbh & Co. Laser-Display-Technologie Kg Method and facility for light-beam projection of images on screen
JP4601808B2 (en) * 1999-12-06 2010-12-22 パナソニック株式会社 Nitride semiconductor device
US6936488B2 (en) * 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
CN100362374C (en) * 2002-07-12 2008-01-16 X3D科技有限责任公司 Automatic three dimensional projecting device
JP2004071885A (en) * 2002-08-07 2004-03-04 Sanyo Electric Co Ltd Semiconductor light emitting element
US20060279662A1 (en) * 2003-03-16 2006-12-14 Explay Ltd. Projection system and method
JP2004304111A (en) * 2003-04-01 2004-10-28 Sharp Corp Multi-wavelength laser device
GB0412651D0 (en) * 2004-06-07 2004-07-07 Microsharp Corp Ltd Autostereoscopic rear projection screen and associated display system
US7846757B2 (en) * 2005-06-01 2010-12-07 The Regents Of The University Of California Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
AT546757T (en) * 2005-10-04 2012-03-15 Koninkl Philips Electronics Nv Lamp-based laser projection system
JP4670602B2 (en) * 2005-11-16 2011-04-13 セイコーエプソン株式会社 Projection system, projector, and information processing apparatus
EP1984940A4 (en) * 2006-02-10 2010-11-10 Univ California Method for conductivity control of (al,in,ga,b)n
JP5096320B2 (en) * 2006-04-12 2012-12-12 パナソニック株式会社 Image display device
WO2007133766A2 (en) * 2006-05-15 2007-11-22 The Regents Of The University Of California Electrically-pumped (ga,in, ai) n vertical-cavity surface-emitting laser
US7766490B2 (en) * 2006-12-13 2010-08-03 Philips Lumileds Lighting Company, Llc Multi-color primary light generation in a projection system using LEDs
JP2008193057A (en) * 2007-01-09 2008-08-21 Matsushita Electric Ind Co Ltd Wavelength converter and two-dimensional image display unit
JP2008198952A (en) * 2007-02-15 2008-08-28 Rohm Co Ltd Group iii nitride semiconductor light emitting device
US8941566B2 (en) * 2007-03-08 2015-01-27 3M Innovative Properties Company Array of luminescent elements
JP2008288527A (en) * 2007-05-21 2008-11-27 Rohm Co Ltd Laser light-emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101138091A (en) * 2005-03-10 2008-03-05 加利福尼亚大学董事会 Technique for the growth of planar semi-polar gallium nitride
CN101308896A (en) * 2007-05-17 2008-11-19 住友电气工业株式会社 Gan substrate, and epitaxial substrate and semiconductor light-emitting device employing the substrate

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