CN105822808A - Diversion valve drive circuit of water-jet loom - Google Patents

Abstract

The invention discloses a diversion valve drive circuit of a water-jet loom, and belongs to the field of electromechanical control. The diversion valve drive circuit comprises a control signal input end, a time sequence generation circuit, an H bridge drive circuit and a diversion valve connector end. The control signal input end comprises an input end IN1 and an input end IN2. The diversion valve connector end comprises an output end OUT1 and an output end OUT2. The time sequence generation circuit comprises four resistors, two NPN type triodes, a 74HC132 type integrated circuit chip and a capacitor. The H bridge drive circuit comprises twelve resistors, four NPN type triodes, two PNP type Darlington triodes, two diodes and two MOS pipes. An H bridge drive input time sequence logic circuit is formed by four NAND gates of the integrated circuit chip, the situation that a one-side bridge arm is directly connected during H bridge drive can be completely avoided, and the defect that it is difficult to guarantee that a drive time sequence is completely accurate when drive control is conducted in the prior art is overcome.

Description

A kind of water-jet loom switching valve drive circuit

Technical field

The present invention relates to a kind of water-jet loom switching valve drive circuit, weave cotton cloth in production for water-jet loom, belong to electromechanical control field.

Background technology

Development along with industrial electric automation, mechanical part in conventional water jet loom picking motion is replaced by electromechanical device, switching valve is exactly the key device introduced in the process, these electromechanical devicies make the pattern of water-jet loom select latitude alternately to be selected latitude by 2 colors in past, and that develops into 4 current colors or even more polychrome selects latitude.The critical component that switching valve is belonging in weft insertion mechanism of water jet loom, the switching of passage of spraying water during being responsible for wefting insertion.By controlling the switching of switching valve regularly, the passage of wefting insertion can be changed as required, such that it is able to realize abundant cloth style.

Switching valve belongs to electromagnetic mechanism, compares traditional mechanical mechanism, has the advantages such as control is flexible, be swift in response.Owing to needing stronger driving electric current when switching valve switches, and different turning to driving voltage direction different, so needing specially designed circuit to be driven, general selecting bridge circuit to drive.Traditional drive circuit, when driving control, it is difficult to ensures the entirely accurate of driver' s timing, it is possible that the situation of unilateral brachium pontis conducting, has potential harmful effect for the reliability of system and the life-span of equipment.

Summary of the invention

The present invention is directed to prior art when driving control, it is difficult to ensure the defect of driver' s timing entirely accurate, it is proposed that a kind of driver' s timing that can produce switching valve exactly, be effectively prevented from the water-jet loom switching valve drive circuit that unilateral brachium pontis conducting situation occurs.

A kind of water-jet loom switching valve drive circuit, including control signal input, timing generator circuit, H-bridge drive circuit, switching valve interface end；

Control signal input includes input IN1 and input IN2；Described input IN1 and input IN2 input is the logical signal of 5V or 3.3V level, namely 5V (3.3V) counterlogic " 1 ", 0V counterlogic " 0 ", two terminals can form 4 kinds of input conditions altogether, combination used in the present invention includes " 00 ", " 10 ", " 01 ", and " 11 " are combined in inapplicable input；

Switching valve interface end includes outfan OUT1 and outfan OUT2, and during use, described outfan OUT1 and outfan OUT2 is connected with two lead-in wires of switching valve respectively；

Timing generator circuit includes the first resistance R1, the second resistance R2, the first NPN type triode NPN1, the 3rd resistance R3, the 4th resistance R4, the second NPN type triode NPN2,74HC132 type the first IC chip U1, the first electric capacity C1；One end of the first described resistance R1 connects 5V power supply, the other end and the colelctor electrode of the first NPN type triode NPN1,1 foot of the first IC chip U1,2 feet and 13 feet and connects, and forms circuit network CH1_DLT；One end of second resistance R2 is connected with input IN1；The other end of the second resistance R2 and the base stage of the first NPN type triode NPN1 connect；The emitter stage of the first NPN type triode NPN1 is connected with power supply ground；One end of 3rd resistance R3 connects 5V power supply, the other end and the colelctor electrode of the second NPN type triode NPN2,9 feet of the first IC chip U1,10 feet and 5 feet and connects, and forms circuit network CH2_DLT；One end of 4th resistance R4 is connected with input IN2；The other end of the 4th resistance R4 and the base stage of the second NPN type triode NPN2 connect；The emitter stage of the second NPN type triode NPN2 is connected with power supply ground；3 feet of the first IC chip U1 and 4 feet connect；8 feet of the first IC chip U1 and 12 feet connect；The 6 foot output signals of the first IC chip U1 form circuit network CH1_MOS;The 11 foot output signals of the first IC chip U1 form circuit network CH2_MOS；14 feet of the first IC chip U1 are connected with one end of 5V power supply, the first electric capacity C1；7 feet of the first IC chip U1 are connected with power supply ground, the other end of the first electric capacity C1；

H-bridge drive circuit includes the tenth resistance R10, 4th NPN type triode NPN4, 8th resistance R8, 6th resistance R6, first positive-negative-positive Darlington triode DLT1, first diode D1, second diode D2, second positive-negative-positive Darlington triode DLT2, 5th resistance R5, 7th resistance R7, 3rd NPN type triode NPN3, 9th resistance R9, 13rd resistance R13, 16th resistance R16, 14th resistance R14, 6th NPN type triode NPN6, first metal-oxide-semiconductor Q1, second metal-oxide-semiconductor Q2, 11st resistance R11, 12nd resistance R12, 5th NPN type triode NPN5, 15th resistance R15；One end of the tenth described resistance R10 is connected with circuit network CH1_DLT, and the base stage of the other end and the 4th NPN type triode NPN4 connects；The emitter stage of the 4th NPN type triode NPN4 is connected with power supply ground, and one end of colelctor electrode and the 8th resistance R8 connects；The base stage of the other end of the 8th resistance R8 and one end of the 6th resistance R6, the first positive-negative-positive Darlington triode DLT1 connects；The other end of the 6th resistance R6 is connected with 48V power supply, the emitter stage of the first positive-negative-positive Darlington triode DLT1, the negative pole of the first diode D1；The drain electrode of the colelctor electrode of the first positive-negative-positive Darlington triode DLT1 and the positive pole of the first diode D1, the first metal-oxide-semiconductor Q1 connects, and forms the circuit network OUT1 with outfan OUT1；One end of 13rd resistance R13 is connected with 12V power supply, and one end of the other end and the colelctor electrode of the 6th NPN type triode NPN6, the 14th resistance R14 connects；One end of 16th resistance R16 is connected with circuit network CH1_MOS；The other end of the 16th resistance R16 and the base stage of the 6th NPN type triode NPN6 connect；The emitter stage of the 6th NPN type triode NPN6 is connected with power supply ground；The other end of the 14th resistance R14 and the grid of the first metal-oxide-semiconductor Q1 connect；The source electrode of the first metal-oxide-semiconductor Q1 is connected with power supply ground；One end of 9th resistance R9 is connected with circuit network CH2_DLT, and the base stage of the other end and the 3rd NPN type triode NPN3 connects；The emitter stage of the 3rd NPN type triode NPN3 is connected with power supply ground, and one end of colelctor electrode and the 7th resistance R7 connects；The base stage of the other end of the 7th resistance R7 and one end of the 5th resistance R5, the second positive-negative-positive Darlington triode DLT2 connects；The other end of the 5th resistance R5 is connected with 48V power supply, the emitter stage of the second positive-negative-positive Darlington triode DLT2, the negative pole of the second diode D2；The drain electrode of the colelctor electrode of the second positive-negative-positive Darlington triode DLT2 and the positive pole of the second diode D2, the second metal-oxide-semiconductor Q2 connects, and forms the circuit network OUT2 of outfan OUT2；One end of 12nd resistance R12 is connected with 12V power supply；One end of the other end of the 12nd resistance R12 and the colelctor electrode of the 5th NPN type triode NPN5, the 11st resistance R11 connects；One end of 15th resistance R15 is connected with circuit network CH2_MOS, and the base stage of the other end and the 5th NPN type triode NPN5 connects；The emitter stage of the 5th NPN type triode NPN5 is connected with power supply ground；The other end of the 11st resistance R11 and the grid of the second metal-oxide-semiconductor Q2 connect；The source electrode of the second metal-oxide-semiconductor Q2 is connected with power supply ground.

Compared with prior art, it is an advantage of the current invention that: 4 NAND gate employing the first IC chip U1 construct a H bridge driving input timing logic circuit, the generation of one side bridge arm direct pass situation when H bridge can be avoided completely to drive, safety and service life for device provide reliable guarantee；The present invention is in use, have only to directly or indirectly be connected to by input IN1 and IN2 on two common I/O port of microcontroller, then by the two I/O port output logical combination " 00 " of microcontroller, " 10 ", " 11 ", just can control switching and the stopping of switching valve, be easy to use and flexibly；Having only to a piece of IC chip 74HC132 owing to introducing 4 NAND gate, attached hardware cost is extremely low, substantially can ignore.

Accompanying drawing explanation

Fig. 1 is the circuit diagram of the present invention.

Detailed description of the invention

As it is shown in figure 1, the present invention includes control signal input 1, timing generator circuit 2, H-bridge drive circuit 3, switching valve interface end 4, totally 4 parts.

Control signal input includes input IN1 and input IN2；Described input IN1 and input IN2 is the logical signal of 5V or 3.3V level, namely 5V (3.3V) counterlogic " 1 ", 0V counterlogic " 0 ", two terminals can form 4 kinds of input conditions altogether, combination used in the present invention includes " 00 ", " 10 ", " 01 ", and " 11 " are combined in inapplicable input；In use, two inputs can be connected on two common I/O port of microcontroller by directly or indirectly mode, be realized switching and the stopping of switching valve by 3 kinds of logical combinations of output.Switching valve interface end 4 includes outfan OUT1 and outfan OUT2, and during use, described outfan OUT1 and outfan OUT2 is connected with two lead-in wires of switching valve respectively.

Timing generator circuit 2 includes the first resistance R1(470 Ω), the second resistance R2(10K Ω), the first NPN type triode NPN1(S8050), the 3rd resistance R3(470 Ω), the 4th resistance R4(10K Ω), the second NPN type triode NPN2(S8050), 74HC132 type the first IC chip U1, the first electric capacity C1(0.1uF)；One end of the first described resistance R1 is connected with 5V power supply；The other end of the first resistance R1 and the colelctor electrode of the first NPN type triode NPN1,1 foot of the first IC chip U1,2 feet and 13 feet connect, and form circuit network CH1_DLT；One end of second resistance R2 is connected with input IN1；The other end of the second resistance R2 and the base stage of the first NPN type triode NPN1 connect；The emitter stage of the first NPN type triode NPN1 is connected with power supply ground；One end of 3rd resistance R3 is connected with 5V power supply；The other end of the 3rd resistance R3 and the colelctor electrode of the second NPN type triode NPN2,9 feet of the first IC chip U1,10 feet and 5 feet connect, and form circuit network CH2_DLT；One end of 4th resistance R4 is connected with input IN2；The other end of the 4th resistance R4 and the base stage of the second NPN type triode NPN2 connect；The emitter stage of the second NPN type triode NPN2 is connected with power supply ground；3 feet of the first IC chip U1 and 4 feet connect；8 feet of the first IC chip U1 and 12 feet connect；The 6 foot output signals of the first IC chip U1 form circuit network CH1_MOS;The 11 foot output signals of the first IC chip U1 form circuit network CH2_MOS；14 feet of the first IC chip U1 are connected with one end of 5V power supply, the first electric capacity C1；7 feet of the first IC chip U1 are connected with power supply ground, the other end of the first electric capacity C1.

nullH-bridge drive circuit 3 includes the tenth resistance R10(10K Ω)、4th NPN type triode NPN4(MMBT5551)、8th resistance R8(11K Ω)、6th resistance R6(680 Ω)、First positive-negative-positive Darlington triode DLT1(BD680A)、First diode D1(SK5B)、Second diode D2(SK5B)、Second positive-negative-positive Darlington triode DLT2(BD680A)、5th resistance R5(680 Ω)、7th resistance R7(11K Ω)、3rd NPN type triode NPN3(MMBT5551)、9th resistance R9(10K Ω)、13rd resistance R13(22K Ω)、16th resistance R16(10K Ω)、14th resistance R14(100 Ω)、6th NPN type triode NPN6(MMBT5551)、First metal-oxide-semiconductor Q1(IRFR120N)、Second metal-oxide-semiconductor Q2(IRFR120N)、11st resistance R11(100 Ω)、12nd resistance R12(22K Ω)、5th NPN type triode NPN5(MMBT5551)、15th resistance R15(10K Ω)；One end of the tenth described resistance R10 is connected with circuit network CH1_DLT；The other end of the tenth resistance R10 and the base stage of the 4th NPN type triode NPN4 connect；The emitter stage of the 4th NPN type triode NPN4 is connected with power supply ground；The colelctor electrode of the 4th NPN type triode NPN4 and one end of the 8th resistance R8 connect；The base stage of the other end of the 8th resistance R8 and one end of the 6th resistance R6, the first positive-negative-positive Darlington triode DLT1 connects；The other end of the 6th resistance R6 is connected with 48V power supply, the emitter stage of the first positive-negative-positive Darlington triode DLT1, the negative pole of the first diode D1；The drain electrode of the colelctor electrode of the first positive-negative-positive Darlington triode DLT1 and the positive pole of the first diode D1, the first metal-oxide-semiconductor Q1 connects, and forms band outfan OUT1 circuit network OUT1；One end of 13rd resistance R13 is connected with 12V power supply；One end of the other end of the 13rd resistance R13 and the colelctor electrode of the 6th NPN type triode NPN6, the 14th resistance R14 connects；One end of 16th resistance R16 is connected with circuit network CH1_MOS；The other end of the 16th resistance R16 and the base stage of the 6th NPN type triode NPN6 connect；The emitter stage of the 6th NPN type triode NPN6 is connected with power supply ground；The other end of the 14th resistance R14 and the grid of the first metal-oxide-semiconductor Q1 connect；The source electrode of the first metal-oxide-semiconductor Q1 is connected with power supply ground；One end of 9th resistance R9 is connected with circuit network CH2_DLT；The other end of the 9th resistance R9 and the base stage of the 3rd NPN type triode NPN3 connect；The emitter stage of the 3rd NPN type triode NPN3 is connected with power supply ground；The colelctor electrode of the 3rd NPN type triode NPN3 and one end of the 7th resistance R7 connect；The base stage of the other end of the 7th resistance R7 and one end of the 5th resistance R5, the second positive-negative-positive Darlington triode DLT2 connects；The other end of the 5th resistance R5 is connected with 48V power supply, the emitter stage of the second positive-negative-positive Darlington triode DLT2, the negative pole of the second diode D2；The drain electrode of the colelctor electrode of the second positive-negative-positive Darlington triode DLT2 and the positive pole of the second diode D2, the second metal-oxide-semiconductor Q2 connects, and forms the circuit network OUT2 with outfan OUT2；One end of 12nd resistance R12 is connected with 12V power supply；One end of the other end of the 12nd resistance R12 and the colelctor electrode of the 5th NPN type triode NPN5, the 11st resistance R11 connects；One end of 15th resistance R15 is connected with circuit network CH2_MOS；The other end of the 15th resistance R15 and the base stage of the 5th NPN type triode NPN5 connect；The emitter stage of the 5th NPN type triode NPN5 is connected with power supply ground；The other end of the 11st resistance R11 and the grid of the second metal-oxide-semiconductor Q2 connect；The source electrode of the second metal-oxide-semiconductor Q2 is connected with power supply ground.

The operation principle of the present invention is: microcontroller transmits control command, the command in combination existed totally 4 kinds from input IN1 and input IN2, is respectively " 00 ", " 10 ", " 01 ", " 11 "；When input is combined as " 00 ", timing generator circuit produce 4 circuit network CH1_DLT, CH2_DLT, CH1_MOS, CH2_MOS level logics be respectively " 0 ", " 0 ", " 1 ", " 1 ", the conducting state of H bridge is that 4 transistors are all not turned on, final control effect is, outfan OUT1 and outfan OUT2 is high-impedance state；When input is combined as " 10 ", timing generator circuit produce 4 circuit network CH1_DLT, CH2_DLT, CH1_MOS, CH2_MOS level logics be respectively " 1 ", " 0 ", " 1 ", " 0 ", the conducting state of H bridge is upper left and two, bottom right transistor turns, and lower-left and two transistors of upper right are not turned on, final control effect is, outfan OUT1 connects 48V power supply, and outfan OUT2 connects power supply ground；When input is combined as " 01 ", timing generator circuit produce 4 circuit network CH1_DLT, CH2_DLT, CH1_MOS, CH2_MOS level logics be respectively " 0 ", " 1 ", " 0 ", " 1 ", the conducting state of H bridge is lower-left and two transistor turns of upper right, and upper left and two, bottom right transistor are not turned on, final control effect is, outfan OUT1 connects power supply ground, and outfan OUT2 connects 48V power supply；When input is combined as " 11 ", timing generator circuit produce 4 circuit network CH1_DLT, CH2_DLT, CH1_MOS, CH2_MOS level logics be respectively " 1 ", " 1 ", " 1 ", " 1 ", the conducting state of H bridge is upper left and two transistor turns of upper right, and lower-left and two, bottom right transistor are not turned on, final control effect is, outfan OUT1 and outfan OUT2 connects 48V power supply；The control effect of whole input logic is as shown in table 1.

Table 1 input logic controls effect table

IN1	IN2	CH1_DLT	CH2_DLT	CH1_MOS	CH2_MOS	Control effect
							0	0	0	0	1	1	OUT1 high resistant, OUT2 high resistant
1	0	1	0	1	0	OUT1 meets 48V, OUT2 and meets AGND
							0	1	0	1	0	1	OUT1 meets AGND, OUT2 and meets 48V
1	1	1	1	1	1	OUT1 meets 48V, OUT2 and meets 48V

As can be seen from the table, when input is combined as " 00 ", outfan OUT1 and outfan OUT2 can be assumed that into and disconnects with circuit；When input is combined as " 10 ", the outfan OUT1 voltage difference relative to outfan OUT2 is 48V；When input is combined as " 01 ", the outfan OUT1 voltage difference relative to outfan OUT2 is-48V；When input is combined as " 11 ", the outfan OUT1 voltage difference relative to outfan OUT2 is 0V；All input conditions are impossible to produce the situation of unilateral brachium pontis conducting；In actual use, when needs switching switching valve direction, switching valve is made to be switched to required orientation, then by combination " 00 ", switching valve be disconnected with power supply by input combination " 10 " or " 01 ", to save the energy, and combine " 11 " and use less than；By analysis it can be seen that input command in combination produces 4 by 4 NAND gate controls logical signals, control the conducting state of 4 respective transistor the most again, thus the outfan driving voltage required for realizing, to drive the action of switching valve.

Claims (1)

1. a water-jet loom switching valve drive circuit, it is characterised in that: described water-jet loom switching valve drive circuit includes control signal input, timing generator circuit, H-bridge drive circuit, switching valve interface end；

Control signal input includes input IN1 and input IN2, input IN1 and input IN2 input is the logical signal of 5V or 3.3V level, 5V or 3.3V counterlogic " 1 ", 0V counterlogic " 0 ", logical signal composition " 00 ", " 10 ", " 01 " three kinds of combinations of two inputs；Switching valve interface end includes outfan OUT1 and outfan OUT2；

Timing generator circuit includes the first resistance R1, the second resistance R2, the first NPN type triode NPN1, the 3rd resistance R3, the 4th resistance R4, the second NPN type triode NPN2,74HC132 type the first IC chip U1, the first electric capacity C1；One end of the first described resistance R1 connects 5V power supply, the other end and the colelctor electrode of the first NPN type triode NPN1,1 foot of the first IC chip U1,2 feet and 13 feet and connects, and forms circuit network CH1_DLT；One end of second resistance R2 is connected with input IN1；The other end of the second resistance R2 and the base stage of the first NPN type triode NPN1 connect；The emitter stage of the first NPN type triode NPN1 is connected with power supply ground；One end of 3rd resistance R3 connects 5V power supply, the other end and the colelctor electrode of the second NPN type triode NPN2,9 feet of the first IC chip U1,10 feet and 5 feet and connects, and forms circuit network CH2_DLT；One end of 4th resistance R4 is connected with input IN2；The other end of the 4th resistance R4 and the base stage of the second NPN type triode NPN2 connect；The emitter stage of the second NPN type triode NPN2 is connected with power supply ground；3 feet of the first IC chip U1 and 4 feet connect；8 feet of the first IC chip U1 and 12 feet connect；The 6 foot output signals of the first IC chip U1 form circuit network CH1_MOS;The 11 foot output signals of the first IC chip U1 form circuit network CH2_MOS；14 feet of the first IC chip U1 are connected with one end of 5V power supply, the first electric capacity C1；7 feet of the first IC chip U1 are connected with power supply ground, the other end of the first electric capacity C1；

H-bridge drive circuit includes the tenth resistance R10, 4th NPN type triode NPN4, 8th resistance R8, 6th resistance R6, first positive-negative-positive Darlington triode DLT1, first diode D1, second diode D2, second positive-negative-positive Darlington triode DLT2, 5th resistance R5, 7th resistance R7, 3rd NPN type triode NPN3, 9th resistance R9, 13rd resistance R13, 16th resistance R16, 14th resistance R14, 6th NPN type triode NPN6, first metal-oxide-semiconductor Q1, second metal-oxide-semiconductor Q2, 11st resistance R11, 12nd resistance R12, 5th NPN type triode NPN5, 15th resistance R15；One end of the tenth described resistance R10 is connected with circuit network CH1_DLT, and the base stage of the other end and the 4th NPN type triode NPN4 connects；The emitter stage of the 4th NPN type triode NPN4 is connected with power supply ground, and one end of colelctor electrode and the 8th resistance R8 connects；The base stage of the other end of the 8th resistance R8 and one end of the 6th resistance R6, the first positive-negative-positive Darlington triode DLT1 connects；The other end of the 6th resistance R6 is connected with 48V power supply, the emitter stage of the first positive-negative-positive Darlington triode DLT1, the negative pole of the first diode D1；The drain electrode of the colelctor electrode of the first positive-negative-positive Darlington triode DLT1 and the positive pole of the first diode D1, the first metal-oxide-semiconductor Q1 connects, and forms the circuit network OUT1 with outfan OUT1；One end of 13rd resistance R13 is connected with 12V power supply, and one end of the other end and the colelctor electrode of the 6th NPN type triode NPN6, the 14th resistance R14 connects；One end of 16th resistance R16 is connected with circuit network CH1_MOS；The other end of the 16th resistance R16 and the base stage of the 6th NPN type triode NPN6 connect；The emitter stage of the 6th NPN type triode NPN6 is connected with power supply ground；The other end of the 14th resistance R14 and the grid of the first metal-oxide-semiconductor Q1 connect；The source electrode of the first metal-oxide-semiconductor Q1 is connected with power supply ground；One end of 9th resistance R9 is connected with circuit network CH2_DLT, and the base stage of the other end and the 3rd NPN type triode NPN3 connects；The emitter stage of the 3rd NPN type triode NPN3 is connected with power supply ground, and one end of colelctor electrode and the 7th resistance R7 connects；The base stage of the other end of the 7th resistance R7 and one end of the 5th resistance R5, the second positive-negative-positive Darlington triode DLT2 connects；The other end of the 5th resistance R5 is connected with 48V power supply, the emitter stage of the second positive-negative-positive Darlington triode DLT2, the negative pole of the second diode D2；The drain electrode of the colelctor electrode of the second positive-negative-positive Darlington triode DLT2 and the positive pole of the second diode D2, the second metal-oxide-semiconductor Q2 connects, and forms the circuit network OUT2 of outfan OUT2；One end of 12nd resistance R12 is connected with 12V power supply；One end of the other end of the 12nd resistance R12 and the colelctor electrode of the 5th NPN type triode NPN5, the 11st resistance R11 connects；One end of 15th resistance R15 is connected with circuit network CH2_MOS, and the base stage of the other end and the 5th NPN type triode NPN5 connects；The emitter stage of the 5th NPN type triode NPN5 is connected with power supply ground；The other end of the 11st resistance R11 and the grid of the second metal-oxide-semiconductor Q2 connect；The source electrode of the second metal-oxide-semiconductor Q2 is connected with power supply ground.