CN105789340A - 一种高强度双层减反膜的制备方法 - Google Patents
一种高强度双层减反膜的制备方法 Download PDFInfo
- Publication number
- CN105789340A CN105789340A CN201610333647.5A CN201610333647A CN105789340A CN 105789340 A CN105789340 A CN 105789340A CN 201610333647 A CN201610333647 A CN 201610333647A CN 105789340 A CN105789340 A CN 105789340A
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- CN
- China
- Prior art keywords
- preparation
- film
- double layer
- titanium oxide
- antireflection film
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- 238000000034 method Methods 0.000 title abstract description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 39
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 48
- 238000002360 preparation method Methods 0.000 claims description 34
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 28
- 239000005357 flat glass Substances 0.000 claims description 22
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 21
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000002156 mixing Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000003756 stirring Methods 0.000 claims description 10
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 7
- 239000012086 standard solution Substances 0.000 claims description 7
- 229960004756 ethanol Drugs 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000000643 oven drying Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000003980 solgel method Methods 0.000 abstract description 4
- 238000000053 physical method Methods 0.000 abstract description 3
- 229910020442 SiO2—TiO2 Inorganic materials 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 230000006872 improvement Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 229910018030 Cu2Te Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610333647.5A CN105789340B (zh) | 2016-05-18 | 2016-05-18 | 一种高强度双层减反膜的制备方法 |
Applications Claiming Priority (1)
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CN201610333647.5A CN105789340B (zh) | 2016-05-18 | 2016-05-18 | 一种高强度双层减反膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105789340A true CN105789340A (zh) | 2016-07-20 |
CN105789340B CN105789340B (zh) | 2017-08-18 |
Family
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Family Applications (1)
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CN201610333647.5A Active CN105789340B (zh) | 2016-05-18 | 2016-05-18 | 一种高强度双层减反膜的制备方法 |
Country Status (1)
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CN (1) | CN105789340B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110407480A (zh) * | 2019-06-21 | 2019-11-05 | 刘其云 | 一种高透光高韧性减反膜的制备方法 |
CN111153600A (zh) * | 2020-01-16 | 2020-05-15 | 焕澄(上海)新材料科技发展有限公司 | 一种高透减反射镀膜玻璃及其制备方法 |
CN111826008A (zh) * | 2020-08-04 | 2020-10-27 | 吴江南玻玻璃有限公司 | 一种减反射镀膜液及其制备方法 |
CN111933721A (zh) * | 2020-09-04 | 2020-11-13 | 安徽天柱绿色能源科技有限公司 | 太阳能电池组件的前板及制备方法和柔性太阳能电池组件 |
CN112382694A (zh) * | 2019-11-07 | 2021-02-19 | 陕西彩虹新材料有限公司 | 一种沙漠地区太阳能电池用减反膜液的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5496621A (en) * | 1993-04-16 | 1996-03-05 | Central Glass Company, Limited | Glass pane with reflectance reducing coating and combiner of head-up display system |
CN101609859A (zh) * | 2009-07-09 | 2009-12-23 | 上海交大泰阳绿色能源有限公司 | 一种晶体硅太阳能电池双层减反射膜的制作方法 |
CN101805135A (zh) * | 2010-04-19 | 2010-08-18 | 中国科学院宁波材料技术与工程研究所 | 镀有双层减反射膜的光伏玻璃及其制备方法 |
CN102910835A (zh) * | 2012-10-25 | 2013-02-06 | 中国科学院宁波材料技术与工程研究所 | 一种在钙钠玻璃表面形成耐久性双层减反射薄膜的方法 |
-
2016
- 2016-05-18 CN CN201610333647.5A patent/CN105789340B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5496621A (en) * | 1993-04-16 | 1996-03-05 | Central Glass Company, Limited | Glass pane with reflectance reducing coating and combiner of head-up display system |
CN101609859A (zh) * | 2009-07-09 | 2009-12-23 | 上海交大泰阳绿色能源有限公司 | 一种晶体硅太阳能电池双层减反射膜的制作方法 |
CN101805135A (zh) * | 2010-04-19 | 2010-08-18 | 中国科学院宁波材料技术与工程研究所 | 镀有双层减反射膜的光伏玻璃及其制备方法 |
CN102910835A (zh) * | 2012-10-25 | 2013-02-06 | 中国科学院宁波材料技术与工程研究所 | 一种在钙钠玻璃表面形成耐久性双层减反射薄膜的方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110407480A (zh) * | 2019-06-21 | 2019-11-05 | 刘其云 | 一种高透光高韧性减反膜的制备方法 |
CN112382694A (zh) * | 2019-11-07 | 2021-02-19 | 陕西彩虹新材料有限公司 | 一种沙漠地区太阳能电池用减反膜液的制备方法 |
CN111153600A (zh) * | 2020-01-16 | 2020-05-15 | 焕澄(上海)新材料科技发展有限公司 | 一种高透减反射镀膜玻璃及其制备方法 |
CN111826008A (zh) * | 2020-08-04 | 2020-10-27 | 吴江南玻玻璃有限公司 | 一种减反射镀膜液及其制备方法 |
CN111933721A (zh) * | 2020-09-04 | 2020-11-13 | 安徽天柱绿色能源科技有限公司 | 太阳能电池组件的前板及制备方法和柔性太阳能电池组件 |
Also Published As
Publication number | Publication date |
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CN105789340B (zh) | 2017-08-18 |
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Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180112 Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |