CN105789079A - Location-aided chip wafer mapping method - Google Patents
Location-aided chip wafer mapping method Download PDFInfo
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- CN105789079A CN105789079A CN201610226898.3A CN201610226898A CN105789079A CN 105789079 A CN105789079 A CN 105789079A CN 201610226898 A CN201610226898 A CN 201610226898A CN 105789079 A CN105789079 A CN 105789079A
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000013507 mapping Methods 0.000 title claims abstract description 47
- 238000005259 measurement Methods 0.000 claims abstract description 66
- 238000000605 extraction Methods 0.000 claims abstract description 38
- 238000012360 testing method Methods 0.000 claims description 58
- 239000000523 sample Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 15
- 238000012545 processing Methods 0.000 description 12
- 238000002372 labelling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The present invention discloses a location-aided chip wafer mapping method. The method comprises the following steps: moving elements to be measured to an extraction position through adoption of a mobile station, and recording the location movement amount of the mobile station; turning the extracted elements to be measured and the location movement amount of the corresponding mobile station or the coordinates calibrated through the location movement amount of the mobile station in a measurement link; and reconstituting parameter wafer mapping through adoption of structure parameters of each element to be measured, the location movement amount of the corresponding mobile station and the measurement parameters obtained in the measurement link. Different from the method for performing physical marking on a chip, the location-aided chip wafer mapping method is configured to mark the relative position or coordinates of the chip on the wafer by means of having the location movement amount with determined location relation with the chip and realize the reconstruction of the wafer mapping of the parameters of the chip after the measurement of the chip level physical parameters, without adding the cost in the process of the detection link on the hardware view.
Description
Technical field
The present invention relates to a kind of photoelectric chip wafer mapping method.
Background technology
Photoelectricity class chip, particularly wherein " edge emitting " class chip, for instance laser diode (LD), have quite some important property parameters can not directly complete to measure on wafer.Traditional way is that wafer (Wafer) is cut into fragrant plant bar (Bar), or is cut into chip (Chip) further, then detects its physical attribute.
Traditional chip, on processing procedure, does not mark and distinguishes, if the fragrant plant bar cut and the unordered random measurement of chip, naturally has no way of setting up physical attribute wafer and maps the pattern of (WaferMapping).
Along with photoelectric chip, particularly edge emitting class chip, the raising to making technology testing requirement, the driving that particularly chip yield is promoted by its inherence so that the functional requirement that the wafer of photoelectric chip maps puts on the schedule of detection of process gradually.
In traditional integrated circuit (IC) chip processing procedure, it is a critical step that wafer maps, and for finding out the defect relevant to spatial distribution of processing procedure, thus improving technique, improves yield.A kind of current way is that each chip is carried out physical markings, so after wafer is cut, these physical markings still can be relied on to reconstruct wafer and map.
But, chip makes marks, not only needs to increase cost of manufacture, and the functional areas of chip are likely to have impact additionally to reduce the yield of chip by these labellings.And in detection process, it is also desirable to increase the optical module that can recognise that these labellings, add board cost, indirectly reduce the flow rate (Throughtput) of detection.
Summary of the invention
It is an object of the invention to provide a kind of location aided rebroadcast chip die mapping method, to exempt the cost of processing procedure that physical markings brings and detection.
For this, according to an aspect of the present invention, it is provided that a kind of location aided rebroadcast chip die mapping method, comprise the following steps: utilize mobile platform that element under test is moved to extraction position, and record the step of the position amount of movement of mobile platform；By together with the element under test being extracted and corresponding location of mobile station amount of movement or the coordinate demarcated by location of mobile station amount of movement in measurement links the step of circulation；And utilize the structural parameters of each element under test, corresponding location of mobile station amount of movement or coordinate and the measurements parameter that obtains in measurement links to carry out the step of wafer mapping of reconfigurable measurement parameter.
Further, the scaling method of above-mentioned coordinate comprises the following steps: demarcate the step of the source point of the wafer moved on platform；Source point is moved to extracting position and recording the position amount of movement of mobile platform using the step as zero reference.
Further, the source point that the step of the source point of the wafer on platform includes utilizing location position device to demarcate the wafer on mobile platform is moved in above-mentioned demarcation.
Further, utilizing location position device before the step demarcating the source point of wafer, also to include the step that wafer loads line position calibration of going forward side by side on a mobile station.
Further, above-mentioned mobile platform is that two-dimensional coordinate moves platform or limit coordinate moves platform.
Further, said chip wafer is photoelectric chip wafer, chip of micro-electro-mechanical system wafer or probe card chip die, and photoelectric chip wafer is preferably edge emitting class photoelectric chip wafer.
Further, above-mentioned element under test is a photoelectric chip and/or the fragrant plant bar being made up of plural photoelectric chip.
Further, above-mentioned mobile platform includes the first record unit being recorded for the position amount of movement that each element under test is corresponding, measurement links includes for the second record unit that the structural parameters of each element under test, measurement parameter are recorded together with position amount of movement or coordinate, and the data that the second record unit provides map for the wafer of reconfigurable measurement parameter.
Further, above-mentioned coordinate is ranks coordinate.
According to a further aspect in the invention, it is provided that a kind of location aided rebroadcast chip die mapping method, comprise the following steps: utilize extraction element to move to the element under test of wafer, and record the step of the position amount of movement of extraction element；By the element under test the being extracted position amount of movement with corresponding extraction element or the coordinate step of circulation in measurement links together demarcated by position amount of movement；And utilize the structural parameters of each element under test, corresponding extraction element position amount of movement or coordinate and the measurements parameter that obtains in measurement links to carry out the step of wafer mapping of reconfigurable measurement parameter.
Further, the scaling method of above-mentioned coordinate comprises the following steps: demarcate the step of the source point of wafer；Extraction element moved to source point and record the position amount of movement of extraction element using the step as zero reference.
Further, the step of the source point of above-mentioned demarcation wafer includes the source point that utilizes location position device to demarcate wafer.This location position device is optical pattern identification system.
Further, above-mentioned photoelectric chip wafer is laser diode chip wafer.
Further, above-mentioned element under test is photoelectric chip and/or the fragrant plant bar being made up of multiple photoelectric chips.
Further, said extracted device includes the 3rd record unit that the position amount of movement that the extraction of each element under test is corresponding is recorded, measurement links includes the 4th record unit that the measurement parameter to each element under test records together with position amount of movement or coordinate, and the data that the wafer mapping of the measurement parameter of to-be-measured cell is provided by the 4th record unit map for the wafer of reconfigurable measurement parameter.
In the Conventional process of photoelectric chip, one single chip is not calibration position, if its physical attribute can not be measured in the level of wafer, under traditional detection pattern, just cannot set up the standard that wafer maps, lose the ability finding out processing procedure defect.The present invention is by means of the position amount of movement of the position amount of movement or extraction element that move platform, carry out tagging chip coordinate on wafer, after realizing chip-scale parameter measurement, the reconstruct that the wafer of its parameter is mapped, the method being different from chip to carry out physical markings, the method for the present invention eliminates the cost increasing processing procedure and detection on hardware view.
Except purpose described above, feature and advantage, the present invention also has other purpose, feature and advantage.Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The Figure of description constituting the part of the application is used for providing a further understanding of the present invention, and the schematic description and description of the present invention is used for explaining the present invention, is not intended that inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the flow chart of location aided rebroadcast chip die mapping method according to a first embodiment of the present invention；
Fig. 2 is the flow chart of location aided rebroadcast chip die mapping method according to a second embodiment of the present invention；
Fig. 3 is the schematic diagram that the wafer constructed by location aided rebroadcast chip die mapping method according to a second embodiment of the present invention maps；
Fig. 4 is the schematic diagram that the element under test of location aided rebroadcast chip die mapping method according to a second embodiment of the present invention is extracted on a mobile station；
Fig. 5 is the stream compression block diagram of the location aided rebroadcast chip die mapping method according to the present invention the first and second embodiment；
Fig. 6 is the flow chart of location aided rebroadcast chip die mapping method according to a third embodiment of the present invention；
Fig. 7 is the flow chart of location aided rebroadcast chip die mapping method according to a fourth embodiment of the present invention；And
Fig. 8 be the location aided rebroadcast chip die mapping method according to the present invention the third and fourth embodiment stream compression block diagram.
Detailed description of the invention
It should be noted that when not conflicting, the embodiment in the application and the feature in embodiment can be mutually combined.Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
According to the first embodiment of the present invention, provide a kind of location of mobile station companion chip wafer mapping method, the method utilizes location of mobile station fill-in light electrical chip wafer to map, as shown in Figure 1, comprise the following steps: utilize mobile platform that element under test is moved to extraction position, and record the step S11 of the position amount of movement of mobile platform；The step S13 that the element under test being extracted is circulated together with corresponding location of mobile station amount of movement in measurement links；And utilize the structural parameters of each element under test, corresponding location of mobile station amount of movement and in measurement links, obtain the step S15 of the wafer mapping measuring parameter to reconstruct this measurement parameter.
nullIn the present embodiment，When wafer is calibrated on a mobile station，On wafer, each element under test all differs relative to the position amount of movement extracting position，Therefore this position amount of movement confirms element under test positional information on wafer，The positional information of each element under test circulates together with the measurement parameter obtained in detection，Thus the data qualification that the wafer meeting reconfigurable measurement parameter maps，In the present invention，For same photoelectric chip wafer，When element under test is photoelectric chip，Its structural parameters are all identical，When element under test is fragrant plant bar，Its structural parameters are relevant to the quantity of the photoelectric chip that fragrant plant bar comprises，Therefore the structural parameters of element under test are added in the wafer mapping method of the present invention，The wafer of the measurement parameter that can realize single photoelectric chip maps、The wafer of the measurement parameter of the fragrant plant bar being made up of plural photoelectric chip maps、And photoelectric chip and fragrant plant bar mix the wafer mapping of measurement parameter during survey.
The structural parameters of above-mentioned element under test typing the sports platform position amount of movement with correspondence can circulate in measurement links when extracting, it is possible to typing in measurement links.The structural parameters of element under test mainly include the gap between geomery and other element under tests, these structural parameters are determined by the processing procedure before photoelectric chip wafer, can pass through to extract process data to obtain, when each element under test is the identical element of structural parameters, such as this element under test is single photoelectric chip, and in step S15, the structural parameters of each element under test can hands-free supply.
In the present invention, position amount of movement is determined according to the movement rule of mobile platform, such as when mobile platform is that X-Y axle moves platform, adopt two-dimensional axial quantity of motion (x, y) calibration position amount of movement, when mobile platform be R-Theta move platform time, adopt limit coordinate (R, θ) calibration position amount of movement.
Different from the method for direct physical labelling on chip, the method of the present invention has the position amount of movement of mobile that determines position relationship by element under test, carry out labelling element under test relative position on wafer, it is achieved that the purpose of the reconstruct mapped after chip-scale physical parameters measurement, to the wafer of its parameter.
According to the second embodiment of the present invention, it is provided that a kind of location aided rebroadcast chip die mapping method, the program utilizes location of mobile station fill-in light electrical chip wafer to map, as in figure 2 it is shown, comprise the following steps: demarcate the step S21 of the source point of the wafer moved on platform；Source point is moved to extracting position and recording the position amount of movement of mobile platform using the step S23 as zero；Utilize mobile platform that element under test is moved to extraction position, and record the step S25 of the position amount of movement of mobile platform；The step S27 that the element under test being extracted is circulated together with the coordinate demarcated by location of mobile station amount of movement in measurement links；And utilize the structural parameters of each element under test, coordinate and in measurement links obtain measurements parameter come reconfigurable measurement parameter wafer mapping step S29.
Below in conjunction with Fig. 3 and Fig. 4, the location aided rebroadcast chip die mapping method of second embodiment of the invention is described.Mobile platform 10 adopts X-Y axle to move platform, including microscope carrier 11, X-axis driver element 11 and Y-axis driver element, microscope carrier 11 is selected to drive by X-axis driver element 11 and Y-axis driver element, realize certain element under test on wafer is moved the underface to pickup unit 30, with to be picked up, this moves platform 10 is the very accurate equipment with digital processing function.
(cutting is not picked up wafer, fragrant plant bar, chip are still on blue film substrate) it is loaded on the microscope carrier of mobile platform, the source point of wafer is defined by location position device (such as optical pattern identification system), the X-Y axle recording correspondence moves the coordinate position (x0, y0) of platform.Then, mobile platform moves to extraction position P chip (or fragrant plant bar), and mobile platform records its position amount of movement (xi, yj), according to chip size and interval information, carry out corresponding demarcation chip ranks coordinate (i on wafer, j), the i-th row jth row namely it are positioned at.This chip is extracted, and departs from blue film substrate, delivers to measuring unit and gone parameter measurement, and in whole process, the coordinate of chip makes as information parameter together in measurement links circulation, and also (i j) stores the result of detection together with its coordinate.After the chip detection of whole wafer completes, according to detection parameter and coordinate (i, j), reconstruct this parameter wafer map.
Different from the method for direct physical labelling on chip, the method of the present embodiment has the position amount of movement of mobile that determines position relationship by element under test, and it is translated into coordinate, come tagging chip position on wafer, it is achieved that the reconstruction purpose mapped after chip-scale physical parameters measurement, to the wafer of its parameter.
The wafer mapping method of according to a first embodiment of the present invention with the second embodiment, particular for laser diode chip wafer, after realizing chip-scale physical parameters measurement, the reconstruct that the wafer of its parameter is mapped.
The wafer mapping method of according to a first embodiment of the present invention with the second embodiment, before the source point of the wafer demarcated on mobile platform, also includes the step that wafer loads line position calibration of going forward side by side on a mobile station.The step of this position correction can adopt existing position calibration method, the confirmation method that can also refer to realize in the China document CN104422864A wafer sort disclosed position alignment carries out, and may further reference the China document CN103063185A single-point disclosed and determines that the method for wafer sort scope carries out.
In the first embodiment of the present invention and the second embodiment, as shown in Figure 5, mobile platform includes the first record unit being recorded for the position amount of movement that each element under test is corresponding, measurement links includes the second record unit for the structural parameters of each element under test, corresponding position amount of movement or coordinate, measurement parameter are recorded together, the data of the first recording unit records are supplied to the second record unit, and the data that the second record unit provides are for meeting the requirement that the wafer measuring parameter maps.
According to the third embodiment of the invention, provide a kind of location aided rebroadcast chip die mapping method, the program utilizes extraction element location aided rebroadcast photoelectric chip wafer to map, as shown in Figure 6, comprise the following steps: utilize extraction element to move to the element under test of wafer, and record the step S31 of the position amount of movement of extraction element；The step S33 that the element under test being extracted is circulated together with the position amount of movement of corresponding extraction element in measurement links；And utilize the structural parameters of each element under test, corresponding extraction element position amount of movement and the measurements parameter that obtains in measurement links to carry out the step S35 of wafer mapping of reconfigurable measurement parameter.
Being different in that with first embodiment, in the present embodiment, extraction element is driven by gearshift, and the position of photoelectric chip wafer maintains static after calibration, demarcates element under test position on wafer by recording the position amount of movement of extraction element.
The present embodiment is by by the position amount of movement having the extraction element determining position relationship with chip, carry out indirect labelling chip relative position on wafer, after realizing chip-scale physical parameters measurement, the reconstruct that the wafer of its parameter is mapped, does not increase the cost of processing procedure and detection on hardware view.
According to the fourth embodiment of the invention, it is provided that a kind of location aided rebroadcast chip die mapping method, the program utilizes extraction element location aided rebroadcast photoelectric chip wafer to map, as it is shown in fig. 7, comprises following steps: demarcate the step S41 of the source point of wafer；Extraction element moved to source point and record the position amount of movement of extraction element using the step S43 as zero reference；Utilize extraction element to move to the element under test of wafer, and record the step S45 of the position amount of movement of extraction element；The step S47 that the element under test being extracted is circulated together with the corresponding coordinate demarcated by position amount of movement in measurement links；And utilize the structural parameters of each element under test, coordinate and in measurement links obtain measurements parameter come reconfigurable measurement parameter wafer mapping step S49.
Being different in that with the second embodiment, in the present embodiment, extraction element is driven by gearshift, and the position of photoelectric chip wafer maintains static after calibration, demarcates element under test position on wafer by recording the position amount of movement of extraction element.
The present embodiment is by by the position amount of movement having the extraction element determining position relationship with chip, carry out indirect labelling chip coordinate on wafer, after realizing chip-scale physical parameters measurement, the reconstruct that the wafer of its parameter is mapped, hardware view does not increase the cost of processing procedure and detection.
In the third embodiment of the present invention and the 4th embodiment, as shown in Figure 8, said extracted device includes the 3rd record unit being recorded for the position amount of movement that the extraction to each element under test is corresponding, measurement links includes the 4th record unit for the structural parameters of each element under test, measurement parameter, position amount of movement (coordinate) are recorded together, the data of the 3rd recording unit records are supplied to the 4th record unit, and the data of the 4th recording unit records are for meeting the requirement that the wafer measuring parameter maps.
In the present invention, when position amount of movement is converted into the coordinate of element under test, this coordinate be preferably ranks coordinate (i, j), in order to wafer maps the processing procedure defect found out can be accurately corresponding with at elder generation's processing procedure.
It is to be noted, although the present invention is the technical scheme that ' photoelectric chip of edge emitting type ' is released, other kinds of photoelectric chip (the photoelectric chip of surface launching type can also be generalized to, such as LED) detection/measurement process in, come secondary wafer dissociate (cutting) become after individual chips, in making detection, physical parameter wafer is mapped the backstepping of (wafermapping).At the same time it can also be the chip die being applied to MEMS (MEMS) and probe card (probecard) type maps.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. a location aided rebroadcast chip die mapping method, it is characterised in that comprise the following steps:
Utilize mobile platform that element under test is moved to extraction position, and record the step of the position amount of movement of mobile platform；
By together with the element under test that is extracted and corresponding location of mobile station amount of movement or the coordinate demarcated by described location of mobile station amount of movement in measurement links the step of circulation；And
Utilize the structural parameters of each described element under test, corresponding described location of mobile station amount of movement or described coordinate and the measurements parameter that obtains in measurement links to reconstruct the step of the wafer mapping of described measurement parameter.
2. location aided rebroadcast chip die mapping method according to claim 1, it is characterised in that the scaling method of described coordinate comprises the following steps:
Demarcate the step of the source point of the wafer moved on platform；And
Described source point moved to described extraction position and record the position amount of movement of described mobile platform using the step as zero reference.
3. location aided rebroadcast chip die mapping method according to claim 2, it is characterised in that the source point that the step of the source point of the wafer on platform includes utilizing location position device to demarcate the wafer on mobile platform is moved in described demarcation.
4. location aided rebroadcast chip die mapping method according to claim 2, it is characterised in that described mobile platform is that two-dimensional coordinate moves platform or limit coordinate moves platform.
5. location aided rebroadcast chip die mapping method according to claim 1, it is characterised in that described chip die is edge emitting class photoelectric chip wafer, chip of micro-electro-mechanical system wafer or probe card chip die.
6. location aided rebroadcast chip die mapping method according to claim 1, it is characterised in that described element under test is a photoelectric chip and/or the fragrant plant bar being made up of plural photoelectric chip.
7. location aided rebroadcast chip die mapping method according to claim 1, it is characterized in that, described mobile platform includes the first record unit being recorded for the position amount of movement that each element under test is corresponding, the described measurement links the second record unit for the measurements parameter of each described element under test and position amount of movement or coordinate are recorded together, the data that described second record unit provides are for reconstructing the wafer mapping of described measurement parameter.
8. a location aided rebroadcast chip die mapping method, it is characterised in that comprise the following steps:
Utilize extraction element to move to the element under test of wafer, and record the step of the position amount of movement of extraction element；
By position amount of movement with corresponding extraction element of the element under test that is extracted or the coordinate step of circulation in measurement links together demarcated by described position amount of movement；And
Utilize the structural parameters of each described element under test, corresponding extraction element position amount of movement or described coordinate and the measurements parameter that obtains in measurement links to reconstruct the step of the wafer mapping of described measurement parameter.
9. location aided rebroadcast chip die mapping method according to claim 8, it is characterised in that the step of the source point of described demarcation wafer includes the source point utilizing location position device to demarcate wafer.
10. location aided rebroadcast chip die mapping method according to claim 8, it is characterised in that the scaling method of described coordinate comprises the following steps: demarcate the step of the source point of wafer；And extraction element moved to described source point and record the position amount of movement of extraction element using the step as zero reference.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106783681A (en) * | 2016-12-12 | 2017-05-31 | 北京中电科电子装备有限公司 | A kind of method and device for demarcating mapping size |
| CN108693456A (en) * | 2018-04-09 | 2018-10-23 | 马鞍山杰生半导体有限公司 | A kind of chip wafer test method |
| CN112017990A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Device and method for selectively moving LED chip and transfer device and method for micro light-emitting diode |
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| US20110303125A1 (en) * | 2004-11-09 | 2011-12-15 | Hiroshi Itou | Load port and adaptor |
| CN103063185A (en) * | 2012-12-31 | 2013-04-24 | 中国电子科技集团公司第四十五研究所 | Single-point method for confirming testing range of wafer |
| CN103646377A (en) * | 2013-12-19 | 2014-03-19 | 北京中电科电子装备有限公司 | Coordinate conversion method and device |
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| US20110303125A1 (en) * | 2004-11-09 | 2011-12-15 | Hiroshi Itou | Load port and adaptor |
| CN103063185A (en) * | 2012-12-31 | 2013-04-24 | 中国电子科技集团公司第四十五研究所 | Single-point method for confirming testing range of wafer |
| CN103646377A (en) * | 2013-12-19 | 2014-03-19 | 北京中电科电子装备有限公司 | Coordinate conversion method and device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106783681A (en) * | 2016-12-12 | 2017-05-31 | 北京中电科电子装备有限公司 | A kind of method and device for demarcating mapping size |
| CN106783681B (en) * | 2016-12-12 | 2019-04-26 | 北京中电科电子装备有限公司 | A kind of method and device of calibration mapping size |
| CN108693456A (en) * | 2018-04-09 | 2018-10-23 | 马鞍山杰生半导体有限公司 | A kind of chip wafer test method |
| CN108693456B (en) * | 2018-04-09 | 2021-07-20 | 马鞍山杰生半导体有限公司 | Wafer chip testing method |
| CN112017990A (en) * | 2019-05-31 | 2020-12-01 | 云谷（固安）科技有限公司 | Device and method for selectively moving LED chip and transfer device and method for micro light-emitting diode |
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| CN105789079B (en) | 2018-04-24 |
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