CN105762171B - A kind of Three-primary-color OLED luminescent device and its preparation and driving method - Google Patents
A kind of Three-primary-color OLED luminescent device and its preparation and driving method Download PDFInfo
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Abstract
The invention discloses a kind of Three-primary-color OLED luminescent device and its preparation and driving methods.Technical scheme of the present invention main points are：A kind of Three-primary-color OLED luminescent device, including the first forward direction OLED, the second forward direction OLED and reversion OLED, the anode of wherein first forward direction OLED is connected by nano silver wire with the cathode of the second forward direction OLED, it is separated by the glue-line that insulate between the nano silver wire and the first forward direction OLED and the second forward direction OLED, the insulation glue-line of the nano silver wire other side is used for segmenting pixels area, the cathode of first forward direction OLED is connected with the anode of the second forward direction OLED, inverts the forward direction OLED common cathodes of OLED and second.The invention further particularly discloses the preparation method of the Three-primary-color OLED luminescent device and driving methods.The Three-primary-color OLED luminescent device pixel resolution higher of the present invention, preparation process is simple, can greatly improve the yields etc. of production process, effectively reduce cost.
Description
Technical field
The invention belongs to light emitting device technologies fields, and in particular to a kind of Three-primary-color OLED luminescent device and its preparation and drive
Dynamic method.
Background technology
The display of oled panel at present usually has following three kinds：RGB（RGB）Pixel independently shines, Color Conversion and coloured silk
Color filter coating.
Rgb pixel independently shines：Utilize FMM（Accurate metal mask version）With CCD pixel precision technique of counterpoint, make first
Standby red, green, blue three-color light-emitting center, then adjusts the colour mixture ratio of three kinds of colors combination, generates colour, makes three color OLED elements
Independent shine constitutes a pixel.The key of this technology is to improve the excitation purity and luminous efficiency of luminescent material, while gold
It is also most important to belong to shadow mask lithographic technique.With the colorization of OLED display, high-resolution and larger in area, metal shadow mask quarter
Erosion technology directly affects the quality of display board picture, so being proposed more to metal shadow mask dimension of picture precision and positioning accuracy
Add harsh requirement.
Color Conversion：With Nan dian Yao combination Color Conversion membrane array, Nan dian Yao device is prepared first, then utilizes it
Blue light excites photochromic transition material to obtain feux rouges and green light, to obtain full color.The key of this technology is to improve photochromic
The excitation purity and efficiency of transition material, this technology are different from FMM technique of counterpoint, Nan dian Yao element only need to be deposited.But it
The disadvantage is that Color Conversion material is easy to absorb the blue light in environment, picture contrast is caused to decline, while light guide will also result in picture
The problem of face quality reduces.
Color filter film：Using white light OLED combination color filter film, the color filter film system of similar liquid crystal display LCD
Make technology, prepare the device for the OLED that emits white light first, three primary colours are then obtained by color filter film, recombinant three primary colours are realized
Colour display.The key of this technology is that the white light of acquisition high efficiency and high-purity, its manufacturing process are aligned different from FMM
Technology, but so that the light loss caused by penetrating color filter film is up to 2/3rds using this technology.
The display type of the above oled panel is red, blue, green three primary colours pixel in panel the same face and column distribution, is passed through
Driving circuit controls to realize the display of picture, and this kind of display pattern determines that pixel resolution will not be very high, and leads at present
Red, blue, green three primary colours pixel independently shines preparation process FMM（Accurate mask plate）And high-accuracy align of CCD is brought
The problems such as complex process yields is low, manufacturing cost is higher.
In OLED solid-state lightings field, otherwise the general cool white light of present OLED illuminating products or warm white.However people
Be accustomed in summer cool white light, winter cannot flexibly be converted very much with warm white etc..
Invention content
Pixel resolution that the present invention is faced for existing OLED luminescent devices display pattern is not high, preparation process is used
FMM（Accurate mask plate）When the problems such as yields is low, manufacturing cost is higher and OLED illuminating product tones are single, it is proposed that it is a kind of
Three-primary-color OLED luminescent device and its preparation and driving method.
The present invention adopts the following technical scheme that a kind of Three-primary-color OLED luminescent device is special to solve above-mentioned technical problem
Sign is to include the first forward direction OLED, the second forward direction OLED and reversion OLED, wherein the anode of the first forward direction OLED is received by silver
Rice noodles are connected with the cathode of the second forward direction OLED, by exhausted between the nano silver wire and the first forward direction OLED and the second forward direction OLED
PI layers of edge separates, and the PI floor of the nano silver wire other side is used for segmenting pixels area, the cathode of the first forward direction OLED and the second forward direction
The anode of OLED is connected, and inverts the forward direction OLED common cathodes of OLED and second.
Further preferably, the Three-primary-color OLED luminescent device by the first forward direction OLED anodes to reversion OLED anodes according to
It is secondary for anode, it is hole injection layer, hole transmission layer, the first luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, transparent
Anode, hole injection layer, hole transmission layer, the second luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, electron injection
Layer, electron transfer layer, third luminescent layer, hole transmission layer, hole injection layer and anode.
Further preferably, the first forward direction OLED is positive green light OLED, and the second forward direction OLED is positive feux rouges
OLED, reversion OLED are reversion Nan dian Yao or the first forward direction OLED is positive green light OLED, and the second forward direction OLED is forward direction
Nan dian Yao, reversion OLED are that the reversion forward directions of feux rouges OLED or first OLED is that forward direction feux rouges OLED, the second forward direction OLED are
Positive green light OLED, reversion OLED are reversion Nan dian Yao or the first forward direction OLED is positive feux rouges OLED, and second is positive
OLED is positive Nan dian Yao, and it is forward direction Nan dian Yao that reversion OLED, which be the reversion forward directions of green light OLED or first OLED, second
Positive OLED is positive feux rouges OLED, and reversion OLED is that the reversion forward directions of green light OLED or first OLED is positive Nan dian Yao,
Second forward direction OLED is positive green light OLED, and reversion OLED is reversion feux rouges OLED.
Selection per layer material：The photoelectric characteristic of OLED luminescent devices layers of material characteristic in by device architecture and structure
It influences, especially the characteristic of organic material.For anode material, consideration and hole transport layer（HTL）The energy band of material is arranged in pairs or groups, and is needed
It is wanted to have high work function（4.5-5.3eV）And property is stablized, some device architecture bottoms, which shine, is also contemplated that its translucency, so
ITO nesa coating is widely used in anode, and there is high work function to be also used as anode material for metallic nickel, gold, platinum etc..It is right
In cathode, in order to increase the luminous efficiency of element, the injection of electronics needs cathode to have a low work function, Ag, Al, Ca, In, Li with
The composition metal of the metals such as Mg or low work function（Such as：Mg-Ag magnesium silver）It is commonly used to make cathode.
Electron transport layer（ETL）Material, it is necessary to which electron-transporting is good and thermostabilization, mainly has and dislikes diindyl derivative and organic gold
Belong to complex compound such as Alq, Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT etc., in order to ensure effective electronics
Injection, electron transport layer（ETL）The lowest unoccupied molecular orbital of material（LUMO）Energy level should match with the work function of cathode.It is empty
Cave transport layer（HTL）Material must thermal stability to get well, most Hole transport materials are aromatic amine fluorescent dye compounds
Such as TPD, TDATA organic material, hole transport layer（HTL）The molecule highest occupied molecular orbital of material（HOMO）Energy level should be with anode
Work function match.
Many devices both increase electron injecting layer at present（EIL）Material and hole injection layer（HIL）Material adjusts the moon
The band gap gradient of anode and transmission layer material, reduces energy level potential barrier.
The material of organic luminous layer need to have under solid-state carrier transmission performance is good, thermal stability and chemical stability are good, amount
Son characteristic that is efficient and being capable of vacuum evaporation considers that material lifetime blue light mainly uses fluorescent material, and feux rouges, green light are mainly used
Efficient phosphor material.
The preparation method of Three-primary-color OLED luminescent device of the present invention, it is characterised in that the specific steps are：
（1）To prepare has the glass substrate of ITO after ultrasound, UV irradiations, deionized water process clean up, wait from
Substrate vapor deposition face is cleaned with o+, o- plasma in vacuum environment by sub-chamber；
（2）Ito glass substrate after cleaning is utilized into inkjet printing technology or photoetching technique, prepares two respectively absolutely
Edge glue-line and nano silver wire, two insulating layers are located at the both sides of nano silver wire, and in nano silver wire and the insulation contacted with electrode
Layer protective layer is prepared respectively at the top of glue-line；
（3）Using high-vacuum apparatus after thermal evaporation chamber adds O-mask and is aligned, the temperature of control evaporation material
It spends and monitors evaporation rate in 1 ~ 2 angstroms per second by crystal-vibration-chip；
（4）Thermal evaporation chamber with thermal evaporation methods according to emitting layer material Characteristics Control evaporate material temperature and by
Crystal-vibration-chip monitors evaporation rate：Required thickness is deposited in vacuum environment in 1 ~ 2 angstroms per second of main body, 0.1 ~ 0.3 angstroms per second of dopant；
（5）Before transparent anode and transparent cathode vapor deposition evaporation rate is monitored with M-mask exactitude positions and by crystal-vibration-chip
The thickness designed according to required 1 ~ 5 angstroms per second of gold, silver material vaporization rate vapor deposition, transparent cathode vapor deposition are preceding accurate with O-mask
It aligns and controls magnesium silver ratio, evaporation speed using method is steamed altogether according to required magnesium ag material by crystal-vibration-chip to monitor evaporation rate
The designed thickness of 1 ~ 5 angstroms per second of rate vapor deposition, transparent anode vapor deposition is preceding to align rationally control evaporation material with another M-mask
Temperature simultaneously monitors the thickness designed by 2 ~ 5 angstroms per second hot evaporation of evaporation rate by crystal-vibration-chip；
（6）Before preparing transparent cathode, the protective layer on nano silver wire, insulation glue-line 2 is removed using dry etching technology；
（7）Transparent cathode goes out the electrode with the transparent anode same direction under pure nitrogen gas environment with high-accuracy laser dry etching,
It is required that the width of laser ablation is 5 ~ 10 microns, depth is 300 nanometers ~ 1 micron；
（8）Device is packaged using encapsulation technology or film.
The driving method of Three-primary-color OLED luminescent device of the present invention, it is characterised in that sent out including independent three primary colours light
The driving of the driving and three primary colours complex light light-emitting mode of optical mode：
（1）The driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, give two electrodes of reversion OLED endothecium structures plus DC pulse signal
Driving element shines；
It needs to design circuit satisfaction output alternating impulse letter for the first forward direction OLED and the second forward direction OLED endothecium structures
Number, frequency is adjustable 60 ~ 100KHz, the positive and negative amplitude amplitude of pulse is adjustable, according to device operation principle, applies different drives to device
Dynamic model formula obtains sending out different base colors light out of device and its composite colored light of two primary colours is specially：
Direct impulse voltage, the current signal for applying a frequency to OLED pixel point device, second in device architecture
The luminescent layer of positive OLED structure is in normal luminous state, and the second positive OLED structure is equivalent to a capacitance；
Negative-going pulse voltage, the current signal for applying a frequency to OLED pixel point device, second in device architecture
The luminescent layer of positive OLED structure is in normal luminous state, and the first positive OLED structure is equivalent to a capacitance；
（2）The driving of three primary colours complex light light-emitting mode
Apply positive negative sense pulse voltage, the current signal of a frequency to OLED pixel point device, device first is positive
The luminescent layer of OLED structure and the second positive OLED structure is in normal luminous state in one cycle, sends out complex light, leads to
Overregulate positive negative pulse stuffing voltage, the ratio of current amplitude obtains the complex light of desired primary colours；
Apply the direct impulse voltage, current signal and a DC pulse letter of a frequency to OLED pixel point device
Number, the luminescent layer of the positive OLED structure of device first is in hair primary lights under the direct impulse voltage, current signal of the frequency
State, reversion OLED structure, in hair primary colours state, pass through adjusting direct impulse voltage, electricity under the driving of DC pulse signal
Stream amplitude combines hair with the luminescent layer that the current amplitude of DC pulse signal obtains desired first forward direction OLED and inverts OLED
The complex light gone out；
Apply the negative-going pulse voltage, current signal and a DC pulse letter of a frequency to OLED pixel point device
Number, the luminescent layer of the positive OLED structure of device second is in hair primary lights under the negative-going pulse voltage, current signal of the frequency
State, reversion OLED structure is in primary colours state under the driving of DC current, by adjusting negative-going pulse voltage, current amplitude
With the current value of DC current, obtains desired second forward direction OLED and combine the complex light sent out with reversion OLED luminescent layers.
The structure for the single pixel point that OLED of the present invention is shown realizes single pixel point independently rubescent bluish-green three primary colours light and three bases
Color complex light designs, and compared to the pixel resolution higher that existing OLED, LCD show picture, the first generation that can compare CRT is shown
Resolution ratio, color are more gorgeous more colorful；The structure of the OLED display pixels of the present invention and the design of driving circuit, compared to present
The OLED display pixel structures of AMOLED modes, driving TFT structure is relatively uniform simple, can save the relevant costs of TFT；This hair
Bright OLED shows the identical preparation process of the structure of each pixel, compared to the red bluish-green three primary colours of AMOLED and column distribution
Preparation process is simple, can greatly improve the yields etc. of production process, effectively reduce cost.
Description of the drawings
Fig. 1 is the structural schematic diagram of Three-primary-color OLED luminescent device of the present invention；
Fig. 2 is the output schematic diagram of alternating impulse driving voltage, electric current；
Fig. 3 is the concrete structure schematic diagram of every layer of material therefor of Three-primary-color OLED luminescent device of the present invention.
Specific implementation mode
The above of the present invention is described in further details by the following examples, but this should not be interpreted as to this
The range for inventing above-mentioned theme is only limitted to embodiment below, and all technologies realized based on the above of the present invention belong to this hair
Bright range.
Embodiment
OLED is an Organic Light Emitting Diode, the characteristic according to diode：For OLED structure, add forward drive electric
Pressure, electric current OLED device are access and luminous state.For OLED emitting device structures plus backward voltage, electric current OLED are
One off state.OLED emitting device structures are：Anode/hole injection layer（HIL）/ hole transmission layer（HTL）/ luminescent layer
（EML）/ electron transfer layer（ETL）/ electron injecting layer（EIL）/ cathode.
According to principle above, the device architecture for the light emitting pixel point of the bottoms OLED is designed（It is not unique）For：First is positive
Green light OLED structure adds the second positive feux rouges OLED structure to add reversion Nan dian Yao structure.Drive the OLED display pixels of the structure
Point pattern be：DC pulse signal driver inversion Nan dian Yao, high-frequency pulse voltage, current signal, and by adjusting just
The amplitude amplitude that negative direction high-frequency pulse voltage, current signal drive makes first in OLED display pixel point structures positive green
Light OLED structure part shines, the second positive feux rouges OLED structure part shines and send out color in green light, feux rouges OLED structure
A variety of complex lights etc. to realize that this single pixel point structure sends out red, blue, green three primary colours light and its composite colored light.
And it can be according to needs（Top shines, bottom shines, double-side）Come in adjusting device structure the position of three primary colours and
Drive mode realizes that the top of display shines, bottom shines, double-side etc..FMM is eliminated in device technology preparation process（It is accurate
Mask plate）Step can save and prepare FMM（Accurate mask plate）Cost.Such single pixel point sends out red bluish-green three primary colours face
Design, the pixel resolution of acquisition can be with first generation kinescope（CRT）The pixel resolution of display is compared, it is same this
Design, which is applied to OLED room lightings, can realize that the fantasy boundary of interior decoration and realization freely convert cool white light and warm white.
Device drive：In order to make the device architecture of pixel that newly-designed OLED shows independently rubescent turquoise（RGB）Three
Primary lights and its complex light need the driving circuit of the device architecture to the OLED pixel point to be designed.It is shone with the bottoms OLED
Device architecture for pixel is：First positive green light OLED structure adds the second positive feux rouges OLED structure to add reversion blue light
For OLED structure.
Three-primary-color OLED luminescent device adds the second positive feux rouges OLED structure to add reversion by the first positive green light OLED structure
Nan dian Yao structure is constituted, specially：Anode/hole injection layer（HIL）/ hole transmission layer（HTL）/ green light emitting layer
（EML1）/ electron transfer layer（ETL）/ electron injecting layer（EIL）/ transparent anode and cathode/hole injection layer（HIL）/ hole transmission layer
（HTL）/ red light emitting layer（EML2）/ electron transfer layer (ETL)/electron injecting layer（EIL）/ transparent cathode/electron injecting layer
（EIL）/ electron transfer layer (ETL)/blue light-emitting layer（EML3）/ hole transmission layer（HTL）/ hole injection layer（HIL）/ cathode.
The driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, give two electrodes of reversion OLED endothecium structures plus DC pulse signal
Driving allows device to send out light；
It needs to design circuit satisfaction output alternating impulse letter for the first forward direction OLED and the second forward direction OLED endothecium structures
Number, frequency is adjustable 60 ~ 100KHz, the positive and negative amplitude amplitude of pulse is adjustable, according to device operation principle, applies different drives to device
Dynamic model formula can obtain sending out different base colors light out of device and its composite colored light of two primary colours is specially：
Direct impulse voltage, the current signal for applying a frequency to OLED pixel point device, second in device architecture
The luminous of positive OLED structure is in normal luminous state layer by layer, and the second positive OLED structure is equivalent to a capacitance；
Negative-going pulse voltage, the current signal for applying a frequency to OLED pixel point device, second in device architecture
The luminescent layer of positive OLED structure is in normal luminous state, and the first positive OLED structure is equivalent to a capacitance；
The driving of three primary colours complex light light-emitting mode
Apply positive negative sense pulse voltage, the current signal of a frequency to OLED pixel point device, device first is positive
The luminescent layer of OLED structure and the second positive OLED structure is in normal luminous state in one cycle, sends out complex light, leads to
The ratio for overregulating positive negative pulse stuffing voltage, current amplitude obtains the complex light of desired primary colours；
Apply the direct impulse voltage, current signal and a DC pulse letter of a frequency to OLED pixel point device
Number, the luminescent layer of the positive OLED structure of device first is in hair primary lights under the direct impulse voltage, current signal of the frequency
State, reversion OLED structure, in hair primary colours state, pass through adjusting direct impulse voltage, electricity under the driving of DC pulse signal
The current amplitude for flowing amplitude and DC pulse signal obtains desired first forward direction OLED and inverts the luminescent layer combination hair of OLED
The complex light gone out；
Apply the negative-going pulse voltage, current signal and a DC pulse letter of a frequency to OLED pixel point device
Number, the luminescent layer of the positive OLED structure of device second is in hair primary lights under the negative-going pulse voltage, current signal of the frequency
State, reversion OLED structure is in primary colours state under the driving of DC current, by adjusting negative-going pulse voltage, current amplitude
With the current value of DC current, obtains desired second forward direction OLED and combine the complex light sent out with reversion OLED luminescent layers.
Selection per layer material：The shadow of the photoelectric characteristic of OLED device layers of material characteristic in by device architecture and structure
It rings, especially the characteristic of organic material.For anode material, consider in hole transport layer（HTL）The energy band of material is arranged in pairs or groups, and is needed
It has high work function（4.5-5.3eV）And property is stablized, some device architecture bottoms, which shine, is also contemplated that its translucency, so ITO
Transparent conductive film is widely used in anode, and there is high work function to be also used as anode material for metallic nickel, gold, platinum etc..For
Cathode, in order to increase the luminous efficiency of element, the injection of electronics needs cathode to have low work function, Ag, Al, Ca, In, Li and Mg
The composition metal of equal metals or low work function（Such as：Mg-Ag magnesium silver）It is commonly used to make cathode.
Electron transport layer（ETL）Material, it is necessary to which electron-transporting is good and thermostabilization, mainly has：Dislike diindyl derivative and organic
Metal complex such as Alq, Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT etc., in order to ensure effective electricity
Son injection, electron transport layer（ETL）The lowest unoccupied molecular orbital of material（LUMO）Energy level should match with the work function of cathode.
Hole transports（HTL）Material, it is necessary to which thermal stability will be got well, and most Hole transport materials are aromatic amine fluorescent dye compounds
Such as TPD, TDATA organic material.Hole transport layer（HTL）The molecule highest occupied molecular orbital of material（HOMO）Energy level should be with anode
Work function match.
Many devices both increase electron injecting layer now（EIL）Material and hole injection layer（HIL）Material, to adjust the moon
The gradient of anode and the band gap of transmission layer material, reduces energy level potential barrier.
The material of organic luminous layer must have under solid-state have carrier transportation performance is good, thermal stability and chemical stability are good,
Quantum efficiency is high and is capable of the characteristic of vacuum evaporation, considers that material lifetime blue light mainly uses fluorescent material, feux rouges, green light are main
With efficient phosphor material.
Preparation method：In general, OLED can be divided into two kinds by luminescent material：Small molecule OLED and macromolecule OLED（
It can be described as PLED）.The preparation process that the difference of small molecule OLED and macromolecule OLED is mainly manifested in device is different：Small molecule device
Part mainly uses vacuum thermal evaporation technique, macromolecule device then to use rotary coating or spraying printing technology.
For the small molecule OLED display ejection light PMOLED forms of present mainstream, a kind of structure of device is：The
One positive green light OLED structure adds the second positive feux rouges OLED structure to add reversion Nan dian Yao structure, specially：Anode/hole note
Enter layer（HIL）/ hole transmission layer (HTL)/green light emitting layer（EML1）/ electron transfer layer（ETL）/ electron injecting layer（EIL）/ thoroughly
Bright anode and cathode/hole injection layer（HIL）/ hole transmission layer（HTL）/ red light emitting layer（EML2）/ electron transfer layer（ETL）/ electricity
Sub- implanted layer（EIL）/ transparent cathode/electron injecting layer（EIL）/ electron transfer layer（ETL）/ blue light-emitting layer（EML3）/ hole
Transport layer（HTL）/ hole injection layer（HIL）/ cathode.
As shown in figure 3, the selection of material：The optional glass of substrate, PI, PET, PEN etc., anode-ITO（80nm）It notes in/hole
Enter layer（HIL）-MoO3（20nm）/ hole transmission layer（HTL）-TCTA（10nm）/ green light emitting layer（EML1）-CPB:GIr1
（30nm, 14%）/ electron transfer layer (ETL)-TPBI（10nm）/ electron injecting layer（EIL）-Cs2CO3（2nm）/ transparent anode and cathode-
Ag：Au（13nm 10:3）/ hole injection layer（HIL）-MoO3（20nm）/ hole transmission layer（HTL）-TCTA（10nm）/ red
Luminescent layer（EML3）-Ir2-phq)2(acac)（0.2nm）/ electron transfer layer（ETL）-TPBI（10nm）/ electron injecting layer
（EIL）-Cs2CO3（2nm）/ transparent cathode-Mg：Ag（200nm 50:150）/ electron injecting layer（EIL）-Cs2CO3（1nm）/ electricity
Sub- transport layer (ETL)-TPBI（10nm）/ blue light-emitting layer (EML2)-Fipic（0.2nm）/ hole transmission layer（HTL）-TCTA
（10nm）/ electron injecting layer（EIL）-Cs2CO3（1nm）/ anode-Au：Ag（13nm 3:10）.
It is prepared by device：
The glass substrate for having ITO will be prepared after ultrasound, UV irradiations, deionized water process clean up, in plasma
Chamber, in vacuum environment O+、O-Plasma cleans substrate vapor deposition face, it is therefore an objective to：It cleans the foreign matter of real estate, carry
The work function of high ITO；
LTPS glass substrates after cleaning are utilized into inkjet printing technology or photoetching technique, prepare insulation glue-line respectively
1, nano silver wire, insulation glue-line 2, and the glue-line 1 that insulate, insulation glue-line 2 are located at nano silver wire both sides, and in nano silver wire, exhausted
Edge glue-line 2 prepares layer protective layer on top；Insulate glue-line 1（It is about 5 microns wide, it is about 3 microns high）Two on LTPS substrates
A Disengagement zone ITO, nano silver wire（It is 5 microns wide, it is about 1 micron high）, insulation glue-line（It is 5 microns wide, it is about 1 micron high）Positioned at ito surface
On, control suitable temperature cures insulation glue-line, nano silver wire；
Using high-vacuum apparatus after thermal evaporation chamber adds O-mask and is aligned, the temperature of control evaporation material is simultaneously
Evaporation rate is monitored in 1 ~ 2 angstroms per second by crystal-vibration-chip；
The temperature of evaporation material is rationally controlled according to emitting layer material characteristic and borrow in thermal evaporation chamber thermal evaporation methods
Crystal-vibration-chip is helped to monitor evaporation rate：Designed institute is deposited in vacuum environment in 1 ~ 2 angstroms per second of main body, 0.1 ~ 0.3 angstroms per second of dopant
The thickness needed；
It is transparent sun cathode evaporation before with M-mask exactitude positions and by crystal-vibration-chip come monitor evaporation rate according to it is required gold,
The designed thickness of 1 ~ 5 angstroms per second of ag material evaporation rate vapor deposition；
The nano silver wire on ito surface, the protective layer on insulation glue-line 2 are being removed using dry etching technology, shelled
It goes the organic material plated above and gold and silver electrode material that nano silver wire is exposed, is fully connect convenient for transparent cathode and nano silver wire
It touches；
Evaporation rate is monitored according to required magnesium silver with O-mask exactitude positions before transparent cathode vapor deposition and by crystal-vibration-chip
Material use steams method to control magnesium silver ratio, the designed thickness of 1 ~ 5 angstroms per second of evaporation rate vapor deposition altogether；It is used before pushing up anode vapor deposition
The temperature of another M-mask contrapositions rationally control evaporation material is simultaneously steamed by crystal-vibration-chip to monitor 2 ~ 5 angstroms per second heat of evaporation rate
The designed thickness of plating；
Dry etching laterally is carried out to transparent cathode with high-accuracy infrared laser under pure nitrogen gas environment, it is desirable that the width of laser ablation
Degree is 5 ~ 10 microns, between depth is 300 nanometers ~ 1 micron.
Device is packaged using encapsulation technology such as frit or film etc..
Embodiment above describes the basic principles and main features and advantage of the present invention, and the technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe the originals of the present invention
Reason, under the range for not departing from the principle of the invention, various changes and improvements may be made to the invention, these changes and improvements are each fallen within
In the scope of protection of the invention.
Claims (5)
1. a kind of Three-primary-color OLED luminescent device, it is characterised in that including the first forward direction OLED, the second forward direction OLED and reversion
OLED, wherein the anode of the first forward direction OLED is connected by nano silver wire with the cathode of the second forward direction OLED, the nano silver wire with
It is separated by the glue-line that insulate between first forward direction OLED and the second forward direction OLED, the insulation glue-line of the nano silver wire other side is for dividing
Pixel region is cut, the cathode of the first forward direction OLED is connected with the anode of the second forward direction OLED, and the reversion forward directions of OLED and second OLED is total
Use cathode.
2. Three-primary-color OLED luminescent device according to claim 1, it is characterised in that：The three primary colours OLED photophores
Part is followed successively by anode by the first forward direction OLED anodes to reversion OLED anodes, hole injection layer, hole transmission layer, first shines
Layer, electron transfer layer, electron injecting layer, transparent cathode, transparent anode, hole injection layer, hole transmission layer, the second luminescent layer,
Electron transfer layer, electron injecting layer, transparent cathode, electron injecting layer, electron transfer layer, third luminescent layer, hole transmission layer, sky
Cave implanted layer and anode.
3. Three-primary-color OLED luminescent device according to claim 1, it is characterised in that：The first forward direction OLED is just
It is positive feux rouges OLED to green light OLED, the second forward direction OLED, reversion OLED is reversion Nan dian Yao or the first forward direction OLED
It is positive Nan dian Yao for positive green light OLED, the second forward direction OLED, reversion OLED is reversion feux rouges OLED or first positive
OLED is positive feux rouges OLED, and the second forward direction OLED is positive green light OLED, and reversion OLED is reversion Nan dian Yao or first
Positive OLED is positive feux rouges OLED, and the second forward direction OLED is positive Nan dian Yao, and reversion OLED is reversion green light OLED, or
First forward direction OLED is positive Nan dian Yao, and the second forward direction OLED is positive feux rouges OLED, and reversion OLED is reversed green light OLED,
Or first forward direction OLED be positive Nan dian Yao, the second forward direction OLED is positive green light OLED, and reversion OLED is to invert feux rouges
OLED。
4. a kind of preparation method of Three-primary-color OLED luminescent device described in claim 1, it is characterised in that the specific steps are：
（1）The glass substrate for having ITO will be prepared after ultrasound, UV irradiations, deionized water process clean up, in plasma chamber
Substrate vapor deposition face is cleaned with o+, o- plasma in vacuum environment in room；
（2）Ito glass substrate after cleaning is utilized into inkjet printing technology or photoetching technique, prepares two insulating cements respectively
Layer and nano silver wire, two insulation glue-lines are located at the both sides of nano silver wire, and in nano silver wire and the insulating cement contacted with electrode
Layer protective layer is prepared respectively in layer top；
（3）Using high-vacuum apparatus after thermal evaporation chamber adds O-mask and is aligned, the temperature of control evaporation material is simultaneously
Evaporation rate is monitored in 1 ~ 2 angstroms per second by crystal-vibration-chip；
（4）In thermal evaporation chamber with thermal evaporation methods according to the temperature of emitting layer material Characteristics Control evaporation material and by crystal oscillator
Piece monitors evaporation rate：1 ~ 2 angstroms per second of main body of emitting layer material, 0.1 ~ 0.3 angstroms per second of dopant of emitting layer material, true
Required thickness is deposited in Altitude；
（5）Transparent anode（2）And transparent cathode（1）M-mask exactitude positions are used before vapor deposition, and monitor evaporation by crystal-vibration-chip
Designed thickness, transparent cathode is deposited according to 1 ~ 5 angstroms per second of evaporation rate of required gold, silver material in rate（2）Before vapor deposition
With O-mask exactitude positions, and evaporation rate is monitored by crystal-vibration-chip, according to required magnesium ag material, is controlled using total steaming method
Designed thickness, anode is deposited in magnesium silver ratio processed, evaporation rate 1 ~ 5 angstroms per second（3）It is carried out with another M-mask before vapor deposition
Contraposition, the temperature of control evaporation material, and designed thickness is deposited to monitor 2 ~ 5 angstroms per second of evaporation rate by crystal-vibration-chip；
（6）Before preparing transparent cathode, by nano silver wire, insulation glue-line（2）On protective layer, utilize dry etching technology remove；
（7）Transparent cathode goes out the electrode with the transparent anode same direction under pure nitrogen gas environment with high-accuracy laser dry etching, it is desirable that
The width of laser ablation is 5 ~ 10 microns, depth is 300 nanometers ~ 1 micron；
（8）Device is packaged using encapsulation technology or film.
5. a kind of driving method of Three-primary-color OLED luminescent device described in claim 1, it is characterised in that including independent three bases
The driving of the driving and three primary colours complex light light-emitting mode of coloured light light-emitting mode：
（1）The driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, driven plus DC pulse signal to two electrodes of reversed OLED endothecium structures
Device shines；
It needs to design circuit satisfaction output alternating impulse signal, frequency for the first forward direction OLED and the second forward direction OLED endothecium structures
Rate is adjustable 60 ~ 100KHz, the positive and negative amplitude amplitude of pulse is adjustable, according to device operation principle, applies different driving moulds to device
Formula obtains sending out different base colors light out of device and its composite colored light of two primary colours is specially：
Apply direct impulse voltage, the current signal of a frequency to OLED pixel point device, second in device architecture is positive
The luminescent layer of OLED structure is in normal luminous state, and the second positive OLED structure is equivalent to a capacitance；
Apply negative-going pulse voltage, the current signal of a frequency to OLED pixel point device, second in device architecture is positive
The luminescent layer of OLED structure is in normal luminous state, and the first positive OLED structure is equivalent to a capacitance；
（2）The driving of three primary colours complex light light-emitting mode
Apply positive negative sense pulse voltage, the current signal of a frequency, the first forward direction of device OLED knots to OLED pixel point device
Structure and the luminescent layer of the second positive OLED structure are in normal luminous state in one cycle, send out complex light, pass through adjusting
Positive negative pulse stuffing voltage, current amplitude ratio obtain the complex light of desired primary colours；
Apply direct impulse voltage, current signal and the DC pulse signal of a frequency, device to OLED pixel point device
The luminescent layer of the positive OLED structure of part first is in hair primary colours light state under the direct impulse voltage, current signal of the frequency,
OLED structure is inverted under the driving of DC pulse signal in hair primary colours light state, by adjusting direct impulse voltage, electric current
Amplitude is combined with the luminescent layer that the current amplitude of DC pulse signal obtains desired first forward direction OLED and inverts OLED and is sent out
Complex light；
Apply negative-going pulse voltage, current signal and the DC pulse signal of a frequency, device to OLED pixel point device
The luminescent layer of the positive OLED structure of part second is in hair primary colours light state under the negative-going pulse voltage, current signal of the frequency,
OLED structure is inverted under the driving of DC current in hair primary colours light state, by adjusting negative-going pulse voltage, current amplitude
With the current value of DC current, obtains desired second forward direction OLED and combine the complex light sent out with reversion OLED luminescent layers.
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