CN105762171A - Three-primary-color OLED device and method for preparing and driving same - Google Patents
Three-primary-color OLED device and method for preparing and driving same Download PDFInfo
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Abstract
The invention discloses a three-primary-color OLED device and a method for preparing and driving the same. The three-primary-color OLED device comprises a first forward OLED, a second forward OLED, and a backward OLED. The anode of the first forward OLED is connected with the cathode of the second forward OLED via a silver nano wire. The silver nano wire is separate from the first forward OLED and the second forward OLED by insulating glue layers. The insulating glue layer on the other side of the silver nano wire is used for segmenting a pixel region. The cathode of the first forward OLED is connected with the anode of the second forward OLED. The backward OLED and the second forward OLED share a cathode. The invention also specifically discloses the method for preparing and driving the three-primary-color OLED device. The three-primary-color OLED device is high in pixel resolution, simple in preparation technology, greatly increased in yield in production processes, and effectively decreased in cost.
Description
Technical field
The invention belongs to light emitting device technologies field, be specifically related to a kind of Three-primary-color OLED luminescent device and preparation thereof and driving method.
Background technology
The display of current oled panel generally has following three kinds: independent luminous, the Color Conversion of RGB (RGB) pixel and color filter film.
Rgb pixel is independent luminous: utilize metal mask version accurate for FMM() and CCD pixel precision technique of counterpoint, first red, green, blue three-color light-emitting center is prepared, then regulate the colour mixture ratio that three kinds of colors combine, produce colour, make trichroism OLED element one pixel of independent luminous composition.The excitation that it is critical only that raising luminescent material of this technology and luminous efficiency, metal shadow mask lithographic technique is also most important simultaneously.Along with the colorization of OLED display, high-resolution and large area, metal shadow mask lithographic technique directly affects the quality of display panel picture, so metal shadow mask dimension of picture precision and positioning precision are proposed harsher requirement.
Color Conversion: with Nan dian Yao in conjunction with Color Conversion membrane array, first prepares Nan dian Yao device, then utilizes its blue-light excited Color Conversion material to obtain HONGGUANG and green glow, thus obtaining full color.The excitation that it is critical only that raising Color Conversion material of this technology and efficiency, this technology is different from FMM technique of counterpoint, only need to be deposited with Nan dian Yao element.But its shortcoming is the blue light that Color Conversion material easily absorbs in environment, causing picture contrast to decline, photoconduction will also result in the problem that image quality reduces simultaneously.
Color filter film: utilize white light OLED in conjunction with color filter film, the color filter film manufacturing technology of similar liquid crystal display LCD, first prepare the device of the OLED that emits white light, then pass through color filter film and obtain three primary colours, recombinant three primary colours realize colour display.This technology it is critical only that acquisition high efficiency and highly purified white light, its manufacturing process is different from FMM technique of counterpoint, but adopt this technology to make to pass through light loss that color filter film causes is up to 2/3rds.
The display type of above oled panel is that three primary colours pixel red, blue, green is at panel the same face column distribution, the display of picture is realized by the control of drive circuit, this kind of display pattern determines that pixel resolution will not be significantly high, and the independent luminous preparation process FMM(precision mask plate of general at present three primary colours pixel red, blue, green) and the problem such as the complex process yields brought of the high-accuracy para-position of CCD is low, preparation cost is higher.
In OLED solid-state illumination field, present OLED illuminating product is general or cool white light, or warm white.But people's custom uses cool white light in summer, winter, the aspect such as warm white can not convert flexibly very much.
Summary of the invention
The present invention is directed to that the existing OLED luminescent device display encountered pixel resolution of pattern is not high, preparation process FMM(precision mask plate) time the problems such as yields is low, preparation cost is higher and OLED illuminating product tone is single, it is proposed that a kind of Three-primary-color OLED luminescent device and preparation thereof and driving method.
The present invention solves that above-mentioned technical problem adopts the following technical scheme that, a kind of Three-primary-color OLED luminescent device, it is characterized in that including the first forward OLED, the second forward OLED and reversion OLED, wherein the anode of the first forward OLED is connected by the negative electrode of nano silver wire and the second forward OLED, separated by the PI layer that insulate between this nano silver wire and the first forward OLED and the second forward OLED, the PI floor of nano silver wire opposite side is used for segmenting pixels district, the negative electrode of the first forward OLED and the anode of the second forward OLED are connected, OLED and the second forward OLED common cathode of reversing.
It is preferred that, described Three-primary-color OLED luminescent device is followed successively by anode, hole injection layer, hole transmission layer, the first luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, transparent anode, hole injection layer, hole transmission layer, the second luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, electron injecting layer, electron transfer layer, the 3rd luminescent layer, hole transmission layer, hole injection layer and anode by the first forward OLED anode to reversion OLED anode.
nullIt is preferred that，The first described forward OLED is forward green glow OLED，Second forward OLED is forward HONGGUANG OLED，Reversion OLED is reversion Nan dian Yao，Or the first forward OLED is forward green glow OLED，Second forward OLED is forward Nan dian Yao，Reversion OLED is reversion HONGGUANG OLED，Or the first forward OLED is forward HONGGUANG OLED，Second forward OLED is forward green glow OLED，Reversion OLED is reversion Nan dian Yao，Or the first forward OLED is forward HONGGUANG OLED，Second forward OLED is forward Nan dian Yao，Reversion OLED is reversion green glow OLED，Or the first forward OLED is forward Nan dian Yao，Second forward OLED is forward HONGGUANG OLED，Reversion OLED is reversion green glow OLED，Or the first forward OLED is forward Nan dian Yao，Second forward OLED is forward green glow OLED，Reversion OLED is reversion HONGGUANG OLED.
Choosing of every layer material: the photoelectric characteristic of OLED luminescent device is by the impact of layers of material characteristic, the especially characteristic of organic material in device architecture and structure.For anode material, consider the energy band collocation with hole transport layer (HTL) material, need its tool high work function (4.5-5.3eV) and stable in properties, luminescence at the bottom of some device architecture it is also contemplated that its light transmission, so transparent conducting film is widely used in anode, metallic nickel, gold, platinum etc. have high work function and are also used as anode material.For negative electrode, in order to increase the luminous efficiency of element, the injection of electronics needs negative electrode to have low work function, and the composition metal of the metal such as Ag, Al, Ca, In, Li and Mg or low work function (as: Mg-Ag magnesium silver) it is commonly used to make negative electrode.
Electron transport layer (ETL) material, necessary electron-transporting is good and thermally-stabilised, mainly there are evil diindyl derivant and metal-organic complex such as Alq, Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT etc., in order to ensure that effective electronics injects, lowest unoccupied molecular orbital (LUMO) energy level of electron transport layer (ETL) material should match with the work function of negative electrode.Hole transport layer (HTL) material must be got well by heat stability, most Hole transport materials are the organic materials such as aromatic amine fluorescent dye compound such as TPD, TDATA, and molecule highest occupied molecular orbital (HOMO) energy level of hole transport layer (HTL) material should match with the work function of anode.
A lot of devices both increase electron injecting layer (EIL) material and hole injection layer (HIL) material to regulate the band gap gradient of anode and cathode and transport layer material at present, reduce energy level potential barrier.
The material of organic luminous layer need to possess that carrier transmission performance under solid-state is good, heat stability and chemical stability is good, quantum efficiency is high and can the characteristic of vacuum evaporation, considering that material lifetime blue light mainly uses fluorescent material, HONGGUANG, green glow mainly use high efficiency phosphor material.
The preparation method of Three-primary-color OLED luminescent device of the present invention, it is characterised in that concretely comprise the following steps:
(1) preparation is had the glass substrate of ITO after ultrasonic, UV irradiation, deionized water operation clean up, at plasma cavity, substrate is deposited with face is carried out at vacuum environment o+, o-plasma；
(2) ito glass substrate after cleaning is utilized inkjet technology or photoetching technique; prepare two insulation glue-lines and nano silver wire respectively; two insulating barriers are positioned at the both sides of nano silver wire, and do not prepare layer protective layer at nano silver wire with the insulation glue-line top portion of electrode contact；
(3) utilize high-vacuum apparatus after thermal evaporation chamber adds O-mask and carries out para-position, control the temperature of evaporation material and monitor evaporation rate in 1 ~ 2 angstroms per second by crystal-vibration-chip；
(4) evaporate the temperature of material in thermal evaporation chamber thermal evaporation methods foundation emitting layer material Characteristics Control and monitor evaporation rate by crystal-vibration-chip: main body 1 ~ 2 angstroms per second, adulterant 0.1 ~ 0.3 angstroms per second, being deposited with desired thickness in vacuum environment；
(5) evaporation rate is monitored according to required gold with M-mask exactitude position and by crystal-vibration-chip before transparent anode and transparent cathode evaporation, the thickness that ag material evaporation rate 1 ~ 5 angstroms per second evaporation is designed, transparent cathode evaporation before with O-mask exactitude position and by crystal-vibration-chip monitor evaporation rate according to required magnesium ag material utilize altogether steam method control magnesium silver ratio, the thickness that evaporation rate 1 ~ 5 angstroms per second evaporation is designed, evaporate the temperature of material with another M-mask para-position conservative control before transparent anode evaporation and monitor, by crystal-vibration-chip, the thickness that evaporation rate 2 ~ 5 angstroms per second heat evaporation is designed；
(6) before preparing transparent cathode, by the protective layer on nano silver wire, insulation glue-line 2, dry etching technology is utilized to remove；
(7) transparent cathode goes out and the electrode of transparent anode equidirectional by high-accuracy laser dry etching under pure nitrogen gas environment, it is desirable to the width of laser ablation is 5 ~ 10 microns, the degree of depth is 300 nanometers ~ 1 micron；
(8) utilize encapsulation technology or thin film that device is packaged.
The driving method of Three-primary-color OLED luminescent device of the present invention, it is characterised in that include the driving of independent three primary colours light light-emitting mode and the driving of three primary colours complex light light-emitting mode:
(1) driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, carry out driving element luminescence plus DC pulse signal to two electrodes of reversion OLED endothecium structure；
Design circuit is needed to meet output alternating impulse signal for the first forward OLED and the second forward OLED endothecium structure, frequency-adjustable 60 ~ 100KHz, pulse positive and negative amplitude amplitude is adjustable, according to device operation principle, device is applied different drive patterns obtain in device, send the composite colored light of different base colors light and two primary colours thereof particularly as follows:
Applying the direct impulse voltage of a frequency, current signal to OLED pixel point device, the luminescent layer of the second forward OLED structure in device architecture is in normal luminous state, and the second forward OLED structure is equivalent to an electric capacity；
Applying the negative-going pulse voltage of a frequency, current signal to OLED pixel point device, the luminescent layer of the second forward OLED structure in device architecture is in normal luminous state, and the first forward OLED structure is equivalent to an electric capacity；
(2) driving of three primary colours complex light light-emitting mode
The positive negative sense pulse voltage of a frequency, current signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure and the second forward OLED structure is in normal luminous state within a cycle, send out complex light, obtain the complex light of desired primary colours by the ratio of adjustment positive negative pulse stuffing voltage, current amplitude；
The direct impulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure is under the direct impulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is under the driving of DC pulse signal sends out primary colours state, and the luminescent layer obtaining desired first forward OLED and reversion OLED by regulating the current amplitude of direct impulse voltage, current amplitude and DC pulse signal combines the complex light sent；
The negative-going pulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the second forward OLED structure is under the negative-going pulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is in primary colours state under the driving of DC current, by regulating the current value of negative-going pulse voltage, current amplitude and DC current, obtain desired second forward OLED and combine, with reversion OLED luminescent layer, the complex light sent.
The structure of single pixel that OLED of the present invention shows realizes the independent rubescent bluish-green three primary colours light of single pixel and the design of three primary colours complex light, comparing existing OLED, LCD and show that the pixel resolution of picture is higher, resolution, color that the first generation CRT that can compare shows are more gorgeous more colorful；The OLED of the present invention shows the structure of pixel and the design of drive circuit, compares the OLED display pixel structure of present AMOLED mode, drives TFT structure relatively uniform simply, can save the relevant cost of TFT；The OLED of the present invention shows that the structure of each pixel is the same from preparation technology, and the preparation technology comparing the red bluish-green three primary colours of AMOLED column distribution is simple, it is possible to improves the yields etc. of production process greatly, effectively reduces cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of Three-primary-color OLED luminescent device of the present invention；
Fig. 2 is the output schematic diagram of alternating impulse driving voltage, electric current；
Fig. 3 is the concrete structure schematic diagram of every layer of material therefor of Three-primary-color OLED luminescent device of the present invention.
Detailed description of the invention
By the following examples the foregoing of the present invention being described in further details, but this should not being interpreted as, the scope of the above-mentioned theme of the present invention is only limitted to below example, all technology realized based on foregoing of the present invention belong to the scope of the present invention.
Embodiment
OLED is an Organic Light Emitting Diode, according to the characteristic of diode: for OLED structure, add positive drive voltage, electric current OLED is path and luminous state.OLED emitting device structure adds backward voltage, electric current OLED is an off state.OLED emitting device structure is: anode/hole injection layer (HIL)/hole transmission layer (HTL)/luminescent layer (EML)/electron transfer layer (ETL)/electron injecting layer (EIL)/negative electrode.
According to principle above, the device architecture (not being unique) that light emitting pixel point at the bottom of design OLED is example is: the first forward green glow OLED structure adds the second forward HONGGUANG OLED structure and adds reversion Nan dian Yao structure.The OLED driving this structure shows that the pattern of pixel is: DC pulse signal driver inversion Nan dian Yao, high-frequency pulse voltage, current signal, and the amplitude amplitude by regulating positive negative direction high-frequency pulse voltage, current signal drives, allow OLED the first forward green glow OLED structure part showing in pixel structure is luminous, the second forward HONGGUANG OLED structure part is luminous and send in green glow, HONGGUANG OLED structure the multiple complex light of color etc. sending three primary colours light red, blue, green and composite colored light thereof realizing this single pixel structure.
And (top is luminous, the end luminous, double-side) position of three primary colours in adjusting device structure can be come and drive pattern realizes the top luminescence of display, end luminescence, double-side etc. according to needing.Device technology preparation process eliminates FMM(precision mask plate) step, it is possible to save preparation FMM(precision mask plate) cost.Such single pixel sends the design of red bluish-green three primary colours face, obtain pixel resolution can show with first generation kinescope (CRT) pixel resolution analogy, equally this design be applied to OLED room lighting can realize the fantasy boundary of interior decoration and realize freely change cool white light and warm white.
Device drive: in order to allow independent rubescent turquoise (RGB) the three primary colours light of device architecture of the newly-designed OLED pixel shown and complex light thereof, it is necessary to the drive circuit of the device architecture of this OLED pixel point is designed.For the device architecture of light emitting pixel point at the bottom of OLED it is: the first forward green glow OLED structure adds the second forward HONGGUANG OLED structure and adds reversion Nan dian Yao structure.
Three-primary-color OLED luminescent device is added the second forward HONGGUANG OLED structure and adds reversion Nan dian Yao structure and constitute by the first forward green glow OLED structure, particularly as follows: anode/hole injection layer (HIL)/hole transmission layer (HTL)/green light emitting layer (EML1)/electron transfer layer (ETL)/electron injecting layer (EIL)/transparent anode and cathode/hole injection layer (HIL)/hole transmission layer (HTL)/red light emitting layer (EML2)/electron transfer layer (ETL)/electron injecting layer (EIL)/transparent cathode/electron injecting layer (EIL)/electron transfer layer (ETL)/blue light-emitting layer (EML3)/hole transmission layer (HTL)/hole injection layer (HIL)/negative electrode.
The driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, drive plus DC pulse signal to two electrodes of reversion OLED endothecium structure and allow device send light；
Design circuit is needed to meet output alternating impulse signal for the first forward OLED and the second forward OLED endothecium structure, frequency-adjustable 60 ~ 100KHz, pulse positive and negative amplitude amplitude is adjustable, according to device operation principle, device is applied different drive patterns can obtain in device, send the composite colored light of different base colors light and two primary colours thereof particularly as follows:
Applying the direct impulse voltage of a frequency, current signal to OLED pixel point device, the luminescence of the second forward OLED structure in device architecture is in normal luminous state layer by layer, and the second forward OLED structure is equivalent to an electric capacity；
Applying the negative-going pulse voltage of a frequency, current signal to OLED pixel point device, the luminescent layer of the second forward OLED structure in device architecture is in normal luminous state, and the first forward OLED structure is equivalent to an electric capacity；
The driving of three primary colours complex light light-emitting mode
The positive negative sense pulse voltage of a frequency, current signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure and the second forward OLED structure is in normal luminous state within a cycle, send out complex light, by regulating the ratio of positive negative pulse stuffing voltage, current amplitude, obtain the complex light of desired primary colours；
The direct impulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure is under the direct impulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is under the driving of DC pulse signal sends out primary colours state, by regulating the current amplitude of direct impulse voltage, current amplitude and DC pulse signal, the luminescent layer obtaining desired first forward OLED and reversion OLED combines the complex light sent；
The negative-going pulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the second forward OLED structure is under the negative-going pulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is in primary colours state under the driving of DC current, by regulating the current value of negative-going pulse voltage, current amplitude and DC current, obtain desired second forward OLED and combine, with reversion OLED luminescent layer, the complex light sent.
Choosing of every layer material: the photoelectric characteristic of OLED is by the impact of layers of material characteristic, the especially characteristic of organic material in device architecture and structure.For anode material, consider can arrange in pairs or groups by band in hole transport layer (HTL) material, need its tool high work function (4.5-5.3eV) and stable in properties, luminescence at the bottom of some device architecture it is also contemplated that its light transmission, so transparent conducting film is widely used in anode, metallic nickel, gold, platinum etc. have high work function and are also used as anode material.For negative electrode, in order to increase the luminous efficiency of element, the injection of electronics needs negative electrode to have low work function, and the composition metal of the metal such as Ag, Al, Ca, In, Li and Mg or low work function (as: Mg-Ag magnesium silver) it is commonly used to make negative electrode.
Electron transport layer (ETL) material, necessary electron-transporting is good and thermally-stabilised, mainly have: dislike diindyl derivant and metal-organic complex such as Alq, Znq, Gaq, Bebq, Balq, DPVBi, ZnSPB, PBD, OXD, BBOT etc., in order to ensure that effective electronics injects, lowest unoccupied molecular orbital (LUMO) energy level of electron transport layer (ETL) material should match with the work function of negative electrode.Hole transports (HTL) material, it is necessary to heat stability to be got well, and most Hole transport materials are the organic materials such as aromatic amine fluorescent dye compound such as TPD, TDATA.Molecule highest occupied molecular orbital (HOMO) energy level of hole transport layer (HTL) material should match with the work function of anode.
A lot of devices both increase electron injecting layer (EIL) material and hole injection layer (HIL) material now, regulate the gradient of anode and cathode and the band gap of transport layer material, reduce energy level potential barrier.
The material of organic luminous layer must possess and have under solid-state that carrier transportation performance is good, heat stability and chemical stability is good, quantum efficiency is high and can the characteristic of vacuum evaporation, considering that material lifetime blue light mainly uses fluorescent material, HONGGUANG, green glow mainly use high efficiency phosphor material.
Preparation method: it is said that in general, OLED can be divided into two kinds by luminescent material: little Molecule OLEDs and macromolecule OLED(are alternatively referred to as PLED).The preparation technology that little Molecule OLEDs is mainly manifested in device with the difference of macromolecule OLED is different: small molecule devices mainly adopts vacuum thermal evaporation technique, macromolecule device then to adopt rotary coating or spraying typography.
nullLittle Molecule OLEDs for present main flow shows that ejecting light PMOLED form is example，A kind of structure of device is: the first forward green glow OLED structure adds the second forward HONGGUANG OLED structure and adds reversion Nan dian Yao structure，Particularly as follows: anode/hole injection layer, (HIL)/hole transmission layer (HTL)/green light emitting layer, (EML1)/electron transfer layer, (ETL)/electron injecting layer, (EIL)/transparent anode and cathode/hole injection layer, (HIL)/hole transmission layer, (HTL)/red light emitting layer, (EML2)/electron transfer layer, (ETL)/electron injecting layer, (EIL)/transparent cathode/electron injecting layer, (EIL)/electron transfer layer, (ETL)/blue light-emitting layer, (EML3)/hole transmission layer, (HTL)/hole injection layer, (HIL)/negative electrode.
As it is shown on figure 3, the choosing of material: the optional glass of substrate, PI, PET, PEN etc., anode ITO(80nm)/hole injection layer (HIL)-MoO3(20nm)/hole transmission layer (HTL)-TCTA(10nm)/green light emitting layer (EML1)-CPB:GIr1(30nm, 14%)/electron transfer layer (ETL)-TPBI(10nm)/electron injecting layer (EIL)-Cs2CO3(2nm)/transparent anode and cathode-Ag:Au(13nm10:3)/hole injection layer (HIL)-MoO3(20nm)/hole transmission layer (HTL)-TCTA(10nm)/red light emitting layer (EML3)-Ir2-phq)2(acac) (0.2nm)/electron transfer layer (ETL)-TPBI(10nm)/electron injecting layer (EIL)-Cs2CO3(2nm)/transparent cathode-Mg:Ag(200nm50:150)/electron injecting layer (EIL)-Cs2CO3(1nm)/electron transfer layer (ETL)-TPBI(10nm)/blue light-emitting layer (EML2) Fipic(0.2nm)/hole transmission layer (HTL)-TCTA(10nm)/electron injecting layer (EIL)-Cs2CO3(1nm)/anode-Au:Ag(13nm3:10).
Prepared by device:
Preparation is had the glass substrate of ITO after ultrasonic, UV irradiation, deionized water operation clean up, at plasma cavity, at vacuum environment O+、O-Substrate is deposited with face and is carried out by plasma, it is therefore an objective to: clean the foreign body of real estate, improve the work function of ITO；
LTPS glass substrate after cleaning is utilized inkjet technology or photoetching technique; prepare insulation glue-line 1, nano silver wire, insulation glue-line 2 respectively; and the glue-line 1 that insulate, insulation glue-line 2 are positioned at nano silver wire both sides, and prepare layer protective layer at nano silver wire, insulation glue-line 2 on top；Glue-line 1(is wide about 5 microns in insulation, high about 3 microns) to be positioned at two ITO Disengagement zone on LTPS substrate, nano silver wire (wide 5 microns, high about 1 micron), insulation glue-line (wide 5 microns, high about 1 micron) be positioned on ito surface, control suitable temperature and insulation glue-line, nano silver wire solidified；
Utilize high-vacuum apparatus after thermal evaporation chamber adds O-mask and carries out para-position, control the temperature of evaporation material and monitor evaporation rate in 1 ~ 2 angstroms per second by crystal-vibration-chip；
Evaporating the temperature of material at thermal evaporation chamber thermal evaporation methods foundation emitting layer material characteristic conservative control and monitor evaporation rate by crystal-vibration-chip: main body 1 ~ 2 angstroms per second, adulterant 0.1 ~ 0.3 angstroms per second, at the designed required thickness of vacuum environment evaporation；
Transparent sun negative electrode is deposited with front M-mask exactitude position and monitors evaporation rate according to the thickness designed by required gold, silver material vaporization rate 1 ~ 5 angstroms per second evaporation by crystal-vibration-chip；
Protective layer on the nano silver wire utilizing dry etching technology to will be located on ito surface, insulation glue-line 2 is peeled off, and peels off the organic material plated above and gold silver electrode material exposes nano silver wire, it is simple to transparent cathode and nano silver wire are fully contacted；
With O-mask exactitude position and monitor evaporation rate by crystal-vibration-chip and utilize according to required magnesium ag material and steam method altogether and control magnesium silver ratio before transparent cathode evaporation, the thickness that evaporation rate 1 ~ 5 angstroms per second evaporation is designed；Evaporate the temperature of material with another M-mask para-position conservative control before the anode evaporation of top and monitor, by crystal-vibration-chip, the thickness that evaporation rate 2 ~ 5 angstroms per second heat evaporation is designed；
Under pure nitrogen gas environment, with high-accuracy iraser, transparent cathode is laterally carried out dry etching, it is desirable to the width of laser ablation is 5 ~ 10 microns, and the degree of depth is between 300 nanometers ~ 1 micron.
Utilize encapsulation technology such as frit or thin film etc. that device is packaged.
Embodiment above describes the ultimate principle of the present invention, principal character and advantage; skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; under the scope without departing from the principle of the invention; the present invention also has various changes and modifications, and these changes and improvements each fall within the scope of protection of the invention.
Claims (5)
1. a Three-primary-color OLED luminescent device, it is characterized in that including the first forward OLED, the second forward OLED and reversion OLED, wherein the anode of the first forward OLED is connected by the negative electrode of nano silver wire and the second forward OLED, separated by the glue-line that insulate between this nano silver wire and the first forward OLED and the second forward OLED, the insulation glue-line of nano silver wire opposite side is used for segmenting pixels district, the negative electrode of the first forward OLED and the anode of the second forward OLED are connected, OLED and the second forward OLED common cathode of reversing.
2. Three-primary-color OLED luminescent device according to claim 1, it is characterised in that: described Three-primary-color OLED luminescent device is followed successively by anode, hole injection layer, hole transmission layer, the first luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, transparent anode, hole injection layer, hole transmission layer, the second luminescent layer, electron transfer layer, electron injecting layer, transparent cathode, electron injecting layer, electron transfer layer, the 3rd luminescent layer, hole transmission layer, hole injection layer and anode by the first forward OLED anode to reversion OLED anode.
null3. Three-primary-color OLED luminescent device according to claim 1，It is characterized in that: the first described forward OLED is forward green glow OLED，Second forward OLED is forward HONGGUANG OLED，Reversion OLED is reversion Nan dian Yao，Or the first forward OLED is forward green glow OLED，Second forward OLED is forward Nan dian Yao，Reversion OLED is reversion HONGGUANG OLED，Or the first forward OLED is forward HONGGUANG OLED，Second forward OLED is forward green glow OLED，Reversion OLED is reversion Nan dian Yao，Or the first forward OLED is forward HONGGUANG OLED，Second forward OLED is forward Nan dian Yao，Reversion OLED is reversion green glow OLED，Or the first forward OLED is forward Nan dian Yao，Second forward OLED is forward HONGGUANG OLED，Reversion OLED is reverse green glow OLED，Or the first forward OLED is forward Nan dian Yao，Second forward OLED is forward green glow OLED，Reversion OLED is reversion HONGGUANG OLED.
4. the preparation method of the Three-primary-color OLED luminescent device described in a claim 1, it is characterised in that concretely comprise the following steps:
(1) preparation there is is the glass substrate of ITO after the operations such as ultrasonic, deionized water clean up, at plasma cavity, substrate is deposited with face is carried out at vacuum environment o+, o-plasma；
(2) ito glass substrate after cleaning is utilized inkjet technology or photoetching technique; prepare two insulation glue-lines and nano silver wire respectively; two insulating barriers are positioned at the both sides of nano silver wire, and do not prepare layer protective layer at nano silver wire with the insulation glue-line top portion of electrode contact；
(3) utilize high-vacuum apparatus after thermal evaporation chamber adds O-mask and carries out para-position, control the temperature of evaporation material and monitor evaporation rate in 1 ~ 2 angstroms per second by crystal-vibration-chip；
(4) evaporate the temperature of material in thermal evaporation chamber thermal evaporation methods foundation emitting layer material Characteristics Control and monitor evaporation rate by crystal-vibration-chip: main body 1 ~ 2 angstroms per second, adulterant 0.1 ~ 0.3 angstroms per second, being deposited with desired thickness in vacuum environment；
(5) evaporation rate is monitored according to required gold with M-mask exactitude position and by crystal-vibration-chip before transparent anode and transparent cathode evaporation, the thickness that ag material evaporation rate 1 ~ 5 angstroms per second evaporation is designed, transparent cathode evaporation before with O-mask exactitude position and by crystal-vibration-chip monitor evaporation rate according to required magnesium ag material utilize altogether steam method control magnesium silver ratio, the thickness that evaporation rate 1 ~ 5 angstroms per second evaporation is designed, evaporate the temperature of material with another M-mask para-position conservative control before transparent anode evaporation and monitor, by crystal-vibration-chip, the thickness that evaporation rate 2 ~ 5 angstroms per second heat evaporation is designed；
(6) before preparing transparent cathode, by the protective layer on nano silver wire, insulation glue-line 2, dry etching technology is utilized to remove；
(7) transparent cathode goes out and the electrode of transparent anode equidirectional by high-accuracy laser dry etching under pure nitrogen gas environment, it is desirable to the width of laser ablation is 5 ~ 10 microns, the degree of depth is 300 nanometers ~ 1 micron；
(8) utilize encapsulation technology or thin film that device is packaged.
5. the driving method of the Three-primary-color OLED luminescent device described in a claim 1, it is characterised in that include the driving of independent three primary colours light light-emitting mode and the driving of three primary colours complex light light-emitting mode:
(1) driving of independent three primary colours light light-emitting mode
In OLED pixel point device architecture, carry out driving element luminescence to two electrodes of reverse OLED endothecium structure plus DC pulse signal；
Design circuit is needed to meet output alternating impulse signal for the first forward OLED and the second forward OLED endothecium structure, frequency-adjustable 60 ~ 100KHz, pulse positive and negative amplitude amplitude is adjustable, according to device operation principle, device is applied different drive patterns obtain in device, send the composite colored light of different base colors light and two primary colours thereof particularly as follows:
Applying the direct impulse voltage of a frequency, current signal to OLED pixel point device, the luminescent layer of the second forward OLED structure in device architecture is in normal luminous state, and the second forward OLED structure is equivalent to an electric capacity；
Applying the negative-going pulse voltage of a frequency, current signal to OLED pixel point device, the luminescent layer of the second forward OLED structure in device architecture is in normal luminous state, and the first forward OLED structure is equivalent to an electric capacity；
(2) driving of three primary colours complex light light-emitting mode
The positive negative sense pulse voltage of a frequency, current signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure and the second forward OLED structure is in normal luminous state within a cycle, send out complex light, obtain the complex light of desired primary colours by the ratio of adjustment positive negative pulse stuffing voltage, current amplitude；
The direct impulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the first forward OLED structure is under the direct impulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is under the driving of DC pulse signal sends out primary colours state, and the luminescent layer obtaining desired first forward OLED and reversion OLED by regulating the current amplitude of direct impulse voltage, current amplitude and DC pulse signal combines the complex light sent；
The negative-going pulse voltage of a frequency, current signal and a DC pulse signal is applied to OLED pixel point device, the luminescent layer of device the second forward OLED structure is under the negative-going pulse voltage of this frequency, current signal sends out primary lights state, reversion OLED structure is in primary colours state under the driving of DC current, by regulating the current value of negative-going pulse voltage, current amplitude and DC current, obtain desired second forward OLED and combine, with reversion OLED luminescent layer, the complex light sent.
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