CN105761778B - A kind of preparation method of low temperature curing type conductive silver paste - Google Patents
A kind of preparation method of low temperature curing type conductive silver paste Download PDFInfo
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- CN105761778B CN105761778B CN201610253683.0A CN201610253683A CN105761778B CN 105761778 B CN105761778 B CN 105761778B CN 201610253683 A CN201610253683 A CN 201610253683A CN 105761778 B CN105761778 B CN 105761778B
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 238000013035 low temperature curing Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 238000003756 stirring Methods 0.000 claims abstract description 35
- 238000002156 mixing Methods 0.000 claims abstract description 23
- 239000004411 aluminium Substances 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 17
- 239000000654 additive Substances 0.000 claims abstract description 16
- 230000000996 additive effect Effects 0.000 claims abstract description 16
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 16
- 239000011812 mixed powder Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000004952 Polyamide Substances 0.000 claims description 5
- 238000001723 curing Methods 0.000 claims description 5
- 125000002883 imidazolyl group Chemical group 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- 229920005668 polycarbonate resin Polymers 0.000 claims description 5
- 239000004431 polycarbonate resin Substances 0.000 claims description 5
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical group CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 102220043159 rs587780996 Human genes 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- -1 butyl carbitol vinegar Acid esters Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
Abstract
The present invention relates to a kind of preparation methods of low temperature curing type conductive silver paste, include the following steps：（1）Raw material is weighed in proportion, it is spare；（2）Nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, nano-silver powder and nanometer aluminium powder is made to be uniformly mixed, and the grain size of mixed-powder is less than 100nm, it is spare；（3）Thermoplastic resin, additive and solvent are put into a mixing bowl and dissolved, and heating stirring, heating temperature is 80 ~ 90 DEG C, and mixing speed is 600 ~ 800 r/min, and stirring and heating time are 2 ~ 3h；（4）By step（2）In mixed-powder be added a mixing bowl, continue heating stirring, heating temperature be 40 ~ 60 DEG C, mixing speed be 2600 ~ 3500 r/min, stirring and heating time be 4 ~ 6h；It is mixed into paste-like, then low-temperature cured conductive silver paste is made；The preparation process is simple, and operability is strong, and productivity is high.
Description
Technical field
The present invention relates to a kind of field of new energy technologies, more particularly to a kind of preparation side of low temperature curing type conductive silver paste
Method.
Background technology
Solar energy is a kind of inexhaustible, nexhaustible clean type energy, with non-renewable energy resources such as coal, oil
Increasingly depleted, exploitation becomes big hot spot using solar energy, and solar cell is exactly a kind of important means using solar energy.
Currently, crystal silicon solar batteries technology is increasingly ripe, transfer efficiency is close to 20%；Most researchers are all being ground
The transfer efficiency for how improving solar cell studied carefully；It is 29% that silicon/crystalline silicon heterojunction solar battery theoretical calculation, which goes out its transfer efficiency,
Between the transfer efficiency for the silicon/crystalline silicon heterojunction solar battery produced at present is 22 ~ 23%, the transfer efficiency in laboratory is then up to
25%, and the temperature tolerance of the silicon/crystalline silicon heterojunction solar battery and stability are better than common crystal silicon solar batteries, mainly
Because the electrode of silicon/crystalline silicon heterojunction solar battery is to use low-temperature conductive silver slurry, and the slurry of electrode influence crystal silicon is heterogeneous
The fill factor of joint solar cell, to influence its transfer efficiency；There are many method for manufacturing electrode, and silk-screen printing and cofiring are
A kind of presently the most universal production technology.Silicon/crystalline silicon heterojunction solar battery conductive slurry for front electrode and backplate are equal
Conductive silver paste is coated on battery by silk-screen printing and positive and negative electrode is formed on silicon chip two sides by low-temperature sintering；Cofiring
The electrode of silicon/crystalline silicon heterojunction solar battery after knot must adhesion-tight, do not fall ash, silicon chip is unlikely to deform, and is easy to weld
It connects, convenient for the electric current collection for being generated illumination with conducting wire and export.Most of low-temperature conductive silver paste is due to its viscosity at present
And the properties such as electric conductivity cause the fill factor of silicon/crystalline silicon heterojunction solar battery not high, it is therefore necessary to develop a kind of raising
The low-temperature cured conductive silver paste of the fill factor of solar cell.
Invention content
The technical problem to be solved by the present invention is to provide a kind of preparation method of low temperature curing type conductive silver paste.
To solve the above-mentioned problems, the technical solution adopted by the present invention is the preparation of the low temperature curing type conductive silver paste
Method, each component being formulated are by weight：86 ~ 92wt% of nano-silver powder, 0.5 ~ 2wt% of nanometer aluminium powder, thermoplastic resin 2 ~
4wt%, additive 0.1 ~ 2 wt%, 1 ~ 10wt% of solvent.
Further improvement lies in that each component of formula is by weight：Nano-silver powder 92wt%, nanometer aluminium powder 0.5wt%,
Thermoplastic resin 2wt%, additive 0.5 wt%, solvent 5wt%.
Further improvement lies in that the solvent is butyl carbitol acetate or/and butyl carbitol.
Further improvement lies in that thermoplastic resin takes polyamide with polycarbonate resin according to mass ratio 3：
97~10：The mixture of 90 mixing.
Further improvement lies in that the nano-silver powder is ball shape silver powder, the median particle size D50=50- of the ball shape silver powder
200nm。
Further improvement lies in that the additive is imidazole curing agent.
Using above-mentioned technical proposal, the preparation method of obtained low temperature curing type conductive silver paste have low-temperature setting and
Hardening time is short, and the electrode depth-width ratio of obtained solar cell is big, improves the fill factor of solar cell, to carry
The high transfer efficiency of solar cell.
The technical problem to be solved by the present invention is to provide a kind of preparation method of low temperature curing type conductive silver paste, make
Standby simple for process, operability is strong, and productivity is high and using the preparation of the low temperature curing type conductive silver paste prepared by this method
Method is at low cost, and yield is big, suitable for being commercially widely popularized.
To solve the above-mentioned problems, the technical solution adopted by the present invention is the preparation of the low temperature curing type conductive silver paste
Method includes the following steps：
（1）Raw material is weighed in proportion, it is spare；
（2）Nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, keeps nano-silver powder and nanometer aluminium powder mixed
It closes uniformly, and the grain size of mixed-powder is less than 100nm, it is spare；
（3）Thermoplastic resin, additive and solvent are put into a mixing bowl and dissolved, and heating stirring, heating temperature be 80 ~
90 DEG C, mixing speed is 600 ~ 800 r/min, and stirring and heating time are 2 ~ 3h；
（4）By step（2）In mixed-powder be added a mixing bowl, continue heating stirring, heating temperature be 40 ~ 60 DEG C, stir
It is 2600 ~ 3500 r/min to mix speed, and stirring and heating time are 4 ~ 6h；It is mixed into paste-like, then low-temperature setting is made
Conductive silver paste.
Specific implementation mode
Embodiment 1：The low temperature curing type conductive silver paste, each component being formulated are by weight：Nano-silver powder
92wt%, nanometer aluminium powder 0.5wt%, thermoplastic resin 2wt%, additive 0.5 wt%, solvent 5wt%；The solvent is that butyl card must
Alcohol acetate；Thermoplastic resin takes polyamide with polycarbonate resin according to mass ratio 6：The mixture of 94 mixing；
The nano-silver powder is ball shape silver powder, the median particle size D50=50-200nm of the ball shape silver powder；The additive is imidazoles
Curing agent.
The preparation method of the low temperature curing type conductive silver paste, includes the following steps：
（1）Raw material is weighed in proportion, it is spare；
（2）Nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, keeps nano-silver powder and nanometer aluminium powder mixed
It closes uniformly, and the grain size of mixed-powder is less than 100nm, it is spare；
（3）Thermoplastic resin, additive and solvent are put into a mixing bowl and dissolved, and heating stirring, heating temperature 80
DEG C, mixing speed is 700 r/min, and stirring and heating time are 2.5h；
（4）By step（2）In mixed-powder be added a mixing bowl, continue heating stirring, heating temperature be 50 DEG C, stirring speed
Degree is 3000 r/min, and stirring and heating time are 5h；It is mixed into paste-like, then low-temperature cured conductive silver paste is made.
Embodiment 2：The low temperature curing type conductive silver paste, each component being formulated are by weight proportion：Nano-silver powder
86wt%, nanometer aluminium powder 2wt%, thermoplastic resin 4wt%, additive 2 wt%, solvent 6wt%；The solvent is butyl carbitol；
Thermoplastic resin takes polyamide with polycarbonate resin according to mass ratio 3：The mixture of 97 mixing；The nanometer
Silver powder is ball shape silver powder, the median particle size D50=50-200nm of the ball shape silver powder；The additive is imidazole curing agent.
The preparation method of the low temperature curing type conductive silver paste, includes the following steps：
（1）Raw material is weighed in proportion, it is spare；
（2）Nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, keeps nano-silver powder and nanometer aluminium powder mixed
It closes uniformly, and the grain size of mixed-powder is less than 100nm, it is spare；
（3）Thermoplastic resin, additive and solvent are put into a mixing bowl and dissolved, and heating stirring, heating temperature 90
DEG C, mixing speed is 800 r/min, and stirring and heating time are 2h；
（4）By step（2）In mixed-powder be added a mixing bowl, continue heating stirring, heating temperature be 60 DEG C, stirring speed
Degree is 3500 r/min, and stirring and heating time are 4h；It is mixed into paste-like, then low-temperature cured conductive silver paste is made.
Embodiment 3：The low temperature curing type conductive silver paste, each component being formulated are by weight proportion：Nano-silver powder
90wt%, nanometer aluminium powder 1wt%, thermoplastic resin 3wt%, additive 1 wt%, solvent 5wt%；The solvent is butyl carbitol vinegar
Acid esters and butyl carbitol；Thermoplastic resin takes polyamide with polycarbonate resin according to mass ratio 10：90 is mixed
The mixture of conjunction；The nano-silver powder is ball shape silver powder, the median particle size D50=50-200nm of the ball shape silver powder；It is described to add
It is imidazole curing agent to add agent.
The preparation method of the low temperature curing type conductive silver paste, includes the following steps：
（1）Raw material is weighed in proportion, it is spare；
（2）Nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, keeps nano-silver powder and nanometer aluminium powder mixed
It closes uniformly, and the grain size of mixed-powder is less than 100nm, it is spare；
（3）Thermoplastic resin, additive and solvent are put into a mixing bowl and dissolved, and heating stirring, heating temperature 85
DEG C, mixing speed is 600 r/min, and stirring and heating time are 3h；
（4）By step（2）In mixed-powder be added a mixing bowl, continue heating stirring, heating temperature be 40 DEG C, stirring speed
Degree is 2600r/min, and stirring and heating time are 6h；It is mixed into paste-like, then low-temperature cured conductive silver paste is made.
Silver paste is led using the low temperature obtained by above-described embodiment, the silicon/crystalline silicon heterojunction sun is applied to using silk-screen printing technique
After energy battery, fill factor：1 ＞ embodiments of embodiment, 3 ＞ embodiments 2.
Finally, it should also be noted that it is listed above be only the present invention several specific embodiments.Obviously, this hair
Bright to be not limited to above example, acceptable there are many deformations.Those skilled in the art can be from present disclosure
All deformations for directly exporting or associating, are considered as protection scope of the present invention.
Claims (1)
1. a kind of preparation method of low temperature curing type conductive silver paste, includes the following steps：
(1) raw material is weighed in proportion, it is spare；
(2) nano-silver powder and nanometer aluminium powder are put into ball mill, ground while stirring, so that nano-silver powder and nanometer aluminium powder is mixed equal
It is even, and the grain size of mixed-powder is less than 100nm, it is spare；
(3) thermoplastic resin, additive and solvent are put into a mixing bowl and are dissolved, and heating stirring, heating temperature is 80~90
DEG C, mixing speed is 600~800r/min, and stirring and heating time are 2~3h；
(4) a mixing bowl is added in the mixed-powder in step (2), continues heating stirring, heating temperature is 40~60 DEG C, stirring speed
Degree is 2600~3500r/min, and stirring and heating time are 4~6h；It is mixed into paste-like, then low-temperature cured conductive is made
Silver paste；It is formulated each component be by weight：86~92wt% of nano-silver powder, 0.5~2wt% of nanometer aluminium powder, thermoplasticity
2~4wt% of resin, 0.1~2wt% of additive, 1~10wt% of solvent；The solvent is butyl carbitol acetate or/and fourth
Base carbitol；Thermoplastic resin takes polyamide with polycarbonate resin according to mass ratio 3：97~10：90 mixing
Mixture；The additive is imidazole curing agent.
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| CN201610253683.0A CN105761778B (en) | 2016-04-22 | 2016-04-22 | A kind of preparation method of low temperature curing type conductive silver paste |
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| CN105761778B true CN105761778B (en) | 2018-09-21 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9972740B2 (en) | 2015-06-07 | 2018-05-15 | Tesla, Inc. | Chemical vapor deposition tool and process for fabrication of photovoltaic structures |
| US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
| US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
| US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
| CN107978384A (en) * | 2017-11-27 | 2018-05-01 | 西安工程大学 | A kind of electrocondution slurry aerosol and preparation method thereof |
| CN114220587A (en) * | 2021-11-23 | 2022-03-22 | 苏州思尔维纳米科技有限公司 | Auxiliary agent for low-temperature silver paste and preparation method and application thereof |
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