CN105742477A - Sb2Te3 thermoelectric film wet etching method - Google Patents
Sb2Te3 thermoelectric film wet etching method Download PDFInfo
- Publication number
- CN105742477A CN105742477A CN201610039854.XA CN201610039854A CN105742477A CN 105742477 A CN105742477 A CN 105742477A CN 201610039854 A CN201610039854 A CN 201610039854A CN 105742477 A CN105742477 A CN 105742477A
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- Prior art keywords
- etching
- wet etching
- laser
- thermoelectric film
- thermoelectric
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000001039 wet etching Methods 0.000 title claims abstract description 23
- 229910017629 Sb2Te3 Inorganic materials 0.000 title claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 30
- 239000010408 film Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005057 refrigeration Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 230000015654 memory Effects 0.000 abstract 1
- BPDQXJZWVBPDSN-UHFFFAOYSA-N tellanylideneantimony;tellurium Chemical compound [Te].[Te]=[Sb].[Te]=[Sb] BPDQXJZWVBPDSN-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention discloses a Sb2Te3 thermoelectric film wet etching method comprising the steps of plating a glass substrate with a Sb2Te3 thermoelectric film through magnetron sputtering, using laser to apply a direct writing type laser exposure heating effect on the Sb2Te3 thermoelectric film, and using etching liquid to selectively wet-etch the film heated by laser. The wet etching method of the invention has the advantages of simple operation, low cost, controllable etching rate, high etching precision, and the like. The wet etching method can be used in the Sb2Te3 micro-nano pattern structure machining process in micro-nano structure manufacturing, thermal sensors, thermoelectric refrigeration devices, solar cells, phase change memories and other fields, and promote the application of the thermoelectric film in the fields.
Description
Technical field
The present invention relates to a kind of Sb2Te3Thermoelectric film wet etching method.
Background technology
Sb2Te3Thermoelectric film is a kind of narrow-band semiconductor thin film, there is the room temperature thermoelectricity capability of excellence, being acknowledged as one of best thermoelectric material for a long time, current most of thermoelectric refrigeration elements all adopt this material, are with a wide range of applications in freezing by thermoelectric action and thermo-electric generation.Meanwhile, Sb2Te3Or a kind of typical phase-change material, at phase transition storage, micro-nano structure manufactures field and has important application.But but without for Sb in existing technology2Te3The wet etching method of thermoelectric film.Thus, develop a kind of high-precision wet-etching technology for Sb2Te3Thermoelectric film application and industrialization have great importance.
Sb2Te3Thin film produces amorphous state to the transformation of crystalline state after laser explosure heat effect, and in NaOH solution, crystalline state has different etch rates from amorphous state, such that it is able to carry out wet etching in NaOH solution by the method for laser direct-writing formula exposure heat effect.
Summary of the invention
It is an object of the invention to provide a kind of Sb2Te3The method of thermoelectric film wet etching, uses NaOH solution as etching liquid, utilizes Sb2Te3Thin film produces amorphous state to the transformation of crystalline state after laser explosure heat effect, and crystalline state has different etch rates in NaOH solution from amorphous state and reaches the purpose of selective wet etching.The method have simple to operate, with low cost, etch rate is controlled, etching precision advantages of higher, it is expected to for micro-nano structure manufacture, heat sensor, thermoelectric cooling device, solaode, the Sb in the field such as phase transition storage2Te3Micro-nano graphic structure processing technique.
For reaching above-mentioned purpose, technical scheme is as follows:
A kind of Sb2Te3The method of thermoelectric film wet etching, comprises the following steps:
A () is on a glass substrate with the method plating last layer Sb of magnetron sputtering2Te3Thermoelectric film；
B () utilizes laser instrument to described Sb2Te3Thermoelectric film carries out write-through exposure heat effect；
C () adopts etching liquid that the thermoelectric film of laser explosure heat effect is carried out wet etching: by described Sb2Te3Thermoelectric film is placed in etching liquid, and according to the etching depth selective etching time needed for thin film, when etching depth is 0-50nm, required etch period is 0-3h.Wherein for laser explosure heat effect region, after etch period is more than 1h, etch rate is about 6nm/h；And for the unexposed heat effect region of laser, etch rate is about 0.2nm/h, both selective etching ratios are up to 30.Utilize this Sb2Te3Thermoelectric film laser action region is different with laser non-zone of action etching speed in etching liquid, it is possible to carry out wet etching.
Described thermoelectric film is Sb2Te3Thin film.
Described etching liquid is sodium hydroxide solution, and its molar concentration is 0.1mol/L.
The technique effect of the present invention:
The present invention passes through NaOH solution to Sb2Te3Membrane laser effect crystalline areas and laser do not act on the selective wet etching of non-crystallization region, it is possible to preparing smooth, steep, pattern micro-nano embossment structure clearly, its etch rate is controlled, and etching precision is high.
Accompanying drawing explanation
Fig. 1 is one Sb of the present invention2Te3The method flow schematic diagram of thermoelectric film wet etching；
Fig. 2 is Sb2Te3Thin film XRD figure spectrum before and after laser explosure heat effect；
Fig. 3 is Sb2Te3Thin film etching characteristic figure in the NaOH solution of 0.1mol/L；
Fig. 4 is the NaOH solution etching Sb adopting 0.1mol/L2Te3Atomic force microscope (AFM) 3-D scanning shape appearance figure after thin film.
Detailed description of the invention
Say below in conjunction with accompanying drawing and the specific embodiment of the present invention is described in further detail.
As it is shown in figure 1, a kind of Sb2Te3The method of thermoelectric film wet etching includes step:
A (), on a glass substrate with the method plating last layer Sb of magnetron sputtering2Te3Thermoelectric film, film thickness is 80nm；
B (), adopting wavelength is that the laser instrument of 405nm is to described Sb2Te3Thermoelectric film carries out write-through exposure heat effect, the Sb before and after laser explosure heat effect2Te3Thin film XRD figure spectrum as in figure 2 it is shown, by figure it is recognised that laser direct-writing exposure heat effect after region there occurs the amorphous state transformation to crystalline state；
C (), adopting molar concentration is that the NaOH solution of 0.1mol/L is to the Sb after laser explosure heat effect2Te3Thin film carries out wet etching, and etch period is 90min, with deionized water rinsing after having etched, then dries, obtains micro-nano structure figure.
The micro-nano structure figure etched can be obtained 3-D scanning shape appearance figure by atomic force microscope (AFM) scanning imagery, as shown in Figure 4.Shown in figure, it can be seen that the method etched after micro-nano embossment structure pattern clear, structure is smooth, steep, and wherein the line thickness in laser explosure heat effect region is about 1.182 μm, is highly about 37.28nm.
Claims (3)
1. a Sb2Te3Thermoelectric film wet etching method, it is characterised in that the method comprises the following steps:
A) on a glass substrate with the method plating last layer Sb of magnetron sputtering2Te3Thermoelectric film；
B) utilize laser instrument to described Sb2Te3Thermoelectric film carries out write-through exposure heat effect；
C) adopt etching liquid to the Sb after laser explosure heat effect2Te3Thermoelectric film carries out wet etching, is removed by the zonal corrosion through laser heat action, leaves the region that laser does not act on.
2. wet etching method according to claim 1, it is characterised in that specifically comprising the following steps that of described step c) wet etching
By described Sb2Te3Thermoelectric film is placed in etching liquid, according to the etching depth selective etching time needed for thin film, when etching depth is 0-50nm, required etch period is 0-3h, for laser explosure heat effect region, after etch period is more than 1h, etch rate is about 6nm/h, for the unexposed heat effect region of laser, etch rate is about 0.2nm/h, and both selective etching ratios are 30.
3. wet etching method according to claim 1, it is characterised in that in described step c), etching liquid is sodium hydroxide solution, molar concentration is 0.1mol/L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039854.XA CN105742477B (en) | 2016-01-21 | 2016-01-21 | A kind of Sb2Te3Thermoelectric film wet etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039854.XA CN105742477B (en) | 2016-01-21 | 2016-01-21 | A kind of Sb2Te3Thermoelectric film wet etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105742477A true CN105742477A (en) | 2016-07-06 |
| CN105742477B CN105742477B (en) | 2018-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610039854.XA Active CN105742477B (en) | 2016-01-21 | 2016-01-21 | A kind of Sb2Te3Thermoelectric film wet etching method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1624873A (en) * | 2004-12-21 | 2005-06-08 | 中国科学院上海光学精密机械研究所 | Sulfide semiconductor mask for photoetching |
| TW200616776A (en) * | 2004-11-24 | 2006-06-01 | Ind Tech Res Inst | Manufacture of mold core used in nanoimprint |
| TW201126779A (en) * | 2010-01-20 | 2011-08-01 | Nat I Lan University | Flexible thermoelectric energy converter and manufacturing method thereof |
-
2016
- 2016-01-21 CN CN201610039854.XA patent/CN105742477B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200616776A (en) * | 2004-11-24 | 2006-06-01 | Ind Tech Res Inst | Manufacture of mold core used in nanoimprint |
| CN1624873A (en) * | 2004-12-21 | 2005-06-08 | 中国科学院上海光学精密机械研究所 | Sulfide semiconductor mask for photoetching |
| TW201126779A (en) * | 2010-01-20 | 2011-08-01 | Nat I Lan University | Flexible thermoelectric energy converter and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN105742477B (en) | 2018-01-12 |
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