CN1624873A - Sulfide semiconductor mask for photoetching - Google Patents
Sulfide semiconductor mask for photoetching Download PDFInfo
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- CN1624873A CN1624873A CN 200410093319 CN200410093319A CN1624873A CN 1624873 A CN1624873 A CN 1624873A CN 200410093319 CN200410093319 CN 200410093319 CN 200410093319 A CN200410093319 A CN 200410093319A CN 1624873 A CN1624873 A CN 1624873A
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- mask
- sulfide semiconductor
- antimony
- tellurium
- live width
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Abstract
The invention provides sulfide semiconductor masks for photo etch use. Its characteristics are: the materials of the mask are germanium telluride, germanium antimony tellurium, silver indium antimony tellurium, antimony tellurium or antimony. Because of the third-order non-linear effect of the materials of this invention, it can greatly reduce the width of the light-spot and the photo etch line, the photo etch point or the width of the photo etch line is 1/3-1/6 of the diffraction limit of the light-spot, and the effect is better than the metal In (60%) and the laser power is greatly limited.
Description
Technical field
The present invention relates to photoetching, be a kind of on photoresist sputter one deck sulfide semiconductor thin film material as the mask layer material, thereby can reduce the technology of etching live width greatly.
Background technology
High density, high-speed and hyperfrequency device constantly appear in improving constantly of semiconductor integrated circuit (IC) integrated level, have promoted fast development of information technology.Can do the integrated level of integrated circuit more high, have benefited from the continuous progress of Micrometer-Nanometer Processing Technology, particularly optical lithography techniques fully.Yet focal beam spot (be etched line wide～λ/NA) is subjected to the restriction of diffraction limit.Can reduce the etching live width by the numerical aperture (NA) that shortens exposure wavelength (λ) or increase lithographic objective.But: (1) photoresist is very sensitive to wavelength change, reduces wavelength and also must develop new photoresist, and problems such as light source that meanwhile matches and technology all need to solve.(2) increase of numerical aperture (NA) also is limited, and the numerical aperture of advanced lithographic objective is brought up to more than 0.8 at present, but its theoretical limit also can only reach 1.So it also is very limited reducing the etching live width by above dual mode.In advanced technology, on the photoresist that is applied on the silicon chip, plate layer of metal indium (In) film again, it is high and make the indium fusing to utilize energy to be the temperature of focal beam spot core of Gaussian Profile, the melting range is less than spot area, effective hot spot is reduced, thereby obtain littler etching live width, its etching live width for do not add indium metal (In) film 60% (H.Shieh et al.Optical disk mastering using optical superresolution effect.Jpn.J.Appl.Phys.2001,40:1671-1675.).But adopt indium (In) as mask material following shortcoming to be arranged: (1) In is a kind of metal material, have very big conductivity, thermal conductivity and thermal diffusion, have behind the focused beam irradiation In film of Gaussian Profile and after material interacts, the concentration of electrons excited, phonon is at the center and exist difference on every side, they are easy to spread towards periphery, non-linear poor, be unfavorable for reducing the etching live width.
Summary of the invention
The problem to be solved in the present invention is to improve effectively the difficulty of above-mentioned prior art, provides a kind of several amorphous sulfide semiconductor thin film material to replace indium metal (In), to reduce the etching live width.
Technical solution of the present invention is:
A kind of sulfide semiconductor mask for photoetching, the material that it is characterized in that described sulfide semiconductor mask are tellurium germanium (GeTe), Ge-Sb-Te (GeSbTe), silver indium antimony tellurium (AgInSbTe), antimony telluride (Sb
2Te
3) or antimony (Sb).
The thickness of described tellurium germanium, Ge-Sb-Te, silver indium antimony tellurium mask is 10-60nm.
The thickness of described antimony telluride mask is 10-40nm.
The thickness of described antimony mask is 5-30nm.
These several sulfide semiconductor thin film materials with behind the sputter mode plated film, are generally amorphous state at normal temperatures, and resistance ratio is bigger, laser radiation with Gaussian Profile is on this material, photon that excites and electronics are not easy to spread towards periphery, and push over calculating according to forefathers' document, light field E
0(r) become E by the outgoing light field behind the amorphous semiconductor film
s(r)=γ [n
0E
0(r)+α β E
0(r)
3], as can be seen, outgoing light field and incident field are the third-order non-linear relation, and laser beam not only can reduce hot spot or etching live width greatly by behind this material like this, can also reduce required laser power.
Plated one deck sulfide semiconductor film on photoresist again, its structure comprises as shown in Figure 1: sulfide semiconductor mask material 1, photoresist 2, silicon chip 3.Wherein sulfide semiconductor mask material 1 is tellurium germanium (GeTe), Ge-Sb-Te (GeSbTe), silver indium antimony tellurium (AgInSbTe), antimony telluride (Sb
2Te
3) or antimony (Sb).
The preferred thickness of sulfide semiconductor mask material 1 is for GeTe, and GeSbTe and AgInSbTe are 10-60nm, for Sb
2Te
3Being 10-40nm, is 5-30nm for Sb.
Technique effect of the present invention:
Compare with technology formerly, the present invention is not that the focal beam spot center that has utilized energy to be Gaussian Profile causes the metal In fusing, the melting range is less than the characteristic of spot area, but utilized the third-order non-linear effect of material, can reduce hot spot or etching live width greatly, etching point or etching live width are the 1/3-1/6 of hot spot diffraction limit, and be more obvious than the effect that adopts indium metal (In) (60%), and the laser power that needs simultaneously also reduces greatly.
Description of drawings
Fig. 1 photolithographic structures schematic diagram of the present invention.
Adopt the relation of the film thickness of indium (In) in sulfide semiconductor that Fig. 2 etching live width and the present invention adopt and the advanced technology.
Embodiment
Sulfide semiconductor mask material of the present invention is tellurium germanium, Ge-Sb-Te, silver indium antimony tellurium, antimony telluride or antimony.
Through repeatedly testing the preferred thickness that obtains described tellurium germanium, Ge-Sb-Te, silver indium antimony tellurium mask is 10-60nm.
The preferred thickness of described antimony telluride mask is 10-40nm.
The preferred thickness of described antimony mask is 5-30nm.
See also Fig. 1, adopt the method for spin coating, on the silicon chip after the polishing 3, be coated with the thick photoresist of one deck 50-100nm 2, use the method (sputtering pressure 1.0 * 10 of magnetron sputtering again
-4Pa) sulfide semiconductor thin film material 1 of sputter different-thickness on photoresist 2, these materials comprise GeTe, GeSbTe, AgInSbTe, Sb
2Te
3With the Sb different materials.Be that the krypton ion gas laser (gas laser has good beam quality and Gaussian Profile) of 406.7nm exposes with wavelength then, the numerical aperture of assembling object lens is 0.90, as shown in Figure 1, the object lens that adopt the short wavelength to make exposure wavelength and high-NA are in order to obtain little etching live width, and minimum hot spot after the focusing or etching live width are 0.6 λ/NA (270nm).The exposure back selects appropriate developer to remove photoresist, because this layer sulfide semiconductor thin film material is very thin, developer can see through semiconductive thin film and be penetrated into photoresist, developer and photoresist reaction after cure thing semiconductive thin film also come off naturally, so formed the etching live width of groove shaped at silicon chip, as Fig. 1.
The employing various sulfide semiconductor films of the present invention that Fig. 2 records for experiment do live width that mask obtains and and advanced technology in adopt indium (In) to do the comparison of mask, the abscissa of Fig. 2 is the thickness of sulfide semiconductor film, and ordinate is the etching live width on the silicon chip.Adopt In to make mask, minimum etching live width (about 160nm) is not for adding 60% of mask In, promptly do not add 60% of In mask minimum spot size 270nm, and adopt sulfide semiconductor film dimensions of the present invention obviously to reduce, the etching live width is the 1/3-1/6 of minimum spot size, effect is very obvious, particularly adopts AgInSbTe and Sb
2Te
3, when optimum thickness, minimum feature can be reduced to 40-50nm, has substantially exceeded optical diffraction limit, and the live width of the 193nm excimer laser more more advanced than present employing is also narrow.
In sum, adopt sulfide semiconductor film of the present invention as mask, utilize their third-order non-linear effect, reached the purpose that obviously reduces the etching live width, this technology has important use in technical field of lithography and is worth.
Claims (4)
1, a kind of sulfide semiconductor mask for photoetching, the material that it is characterized in that described sulfide semiconductor mask is tellurium germanium, Ge-Sb-Te, silver indium antimony tellurium, antimony telluride or antimony.
2, sulfide semiconductor mask for photoetching according to claim 1, the thickness that it is characterized in that described tellurium germanium, Ge-Sb-Te, silver indium antimony tellurium mask is 10-60nm.
3, sulfide semiconductor mask for photoetching according to claim 1, the thickness that it is characterized in that described antimony telluride mask is 10-40nm.
4, sulfide semiconductor mask for photoetching according to claim 1, the thickness that it is characterized in that described antimony mask is 5-30nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410093319XA CN1299330C (en) | 2004-12-21 | 2004-12-21 | Sulfide semiconductor mask for photoetching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410093319XA CN1299330C (en) | 2004-12-21 | 2004-12-21 | Sulfide semiconductor mask for photoetching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1624873A true CN1624873A (en) | 2005-06-08 |
| CN1299330C CN1299330C (en) | 2007-02-07 |
Family
ID=34766392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410093319XA Expired - Fee Related CN1299330C (en) | 2004-12-21 | 2004-12-21 | Sulfide semiconductor mask for photoetching |
Country Status (1)
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|---|---|
| CN (1) | CN1299330C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742477A (en) * | 2016-01-21 | 2016-07-06 | 中国科学院上海光学精密机械研究所 | Sb2Te3 thermoelectric film wet etching method |
| CN112864807A (en) * | 2021-04-26 | 2021-05-28 | 武汉云岭光电有限公司 | Method for burying heterojunction |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002015631A (en) * | 2000-06-29 | 2002-01-18 | Sumitomo Osaka Cement Co Ltd | Coating solution for photosensitive transparent electro- conductive film formation, patternized transparent electro-conductive film and manufacturing method of transparent electro-conductive film |
| CN1206573C (en) * | 2003-08-22 | 2005-06-15 | 中国科学院上海光学精密机械研究所 | Photomask containing non-linear optical material layer |
-
2004
- 2004-12-21 CN CNB200410093319XA patent/CN1299330C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742477A (en) * | 2016-01-21 | 2016-07-06 | 中国科学院上海光学精密机械研究所 | Sb2Te3 thermoelectric film wet etching method |
| CN105742477B (en) * | 2016-01-21 | 2018-01-12 | 中国科学院上海光学精密机械研究所 | A kind of Sb2Te3Thermoelectric film wet etching method |
| CN112864807A (en) * | 2021-04-26 | 2021-05-28 | 武汉云岭光电有限公司 | Method for burying heterojunction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1299330C (en) | 2007-02-07 |
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Granted publication date: 20070207 Termination date: 20101221 |