CN105742438B - A kind of iii-nitride light emitting devices - Google Patents
A kind of iii-nitride light emitting devices Download PDFInfo
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- CN105742438B CN105742438B CN201610276668.8A CN201610276668A CN105742438B CN 105742438 B CN105742438 B CN 105742438B CN 201610276668 A CN201610276668 A CN 201610276668A CN 105742438 B CN105742438 B CN 105742438B
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- iii
- emitting devices
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- 230000004888 barrier function Effects 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- 230000006798 recombination Effects 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005215 recombination Methods 0.000 claims abstract description 8
- 230000007704 transition Effects 0.000 claims abstract description 5
- 108091006146 Channels Proteins 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 230000006872 improvement Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of iii-nitride light emitting devices, successively including substrate, N-type nitride, MQW, V pits, n-type doped channel region, local non-impurity-doped region, V pits local electronic barrier layer, p-type nitride, and p-type contact layer, it is characterised in that：The V pits both sides in the MQW region have local non-impurity-doped region, prevent electronics and holes-leakage to V pits；Meanwhile the n-type doped channel region of quantum rank is formed between V pits and V pits, limit to electronics and hole and transition and compound is carried out in this region, lift the transverse direction and longitudinal direction extension of the combined efficiency and electric current of carrier, lifting luminous intensity and improve ESD；The local electronic barrier layer of the top growth nanoscale in V pits both sides local non-impurity-doped region, further stop that thermoelectron and holes-leakage to V pits, reduce non-radiative recombination, lift luminous intensity and improve and leak electricity.
Description
Technical field
The present invention relates to semiconductor photoelectric device field, particularly a kind of iii-nitride light emitting devices.
Background technology
Now, light emitting diode（LED）, particularly iii-nitride light emitting devices are because of its higher luminous efficiency, common
Lighting field, which has obtained, to be widely applied.Because of the bottom existing defects of iii-nitride light emitting devices, cause to lack during grown quantum trap
Sunken extension can form V-pits, form non-radiative recombination center, cause electronics to be leaked easily by V-pits leak channel, shape
Into electric leakage and non-radiative recombination, luminous intensity and ESD are reduced.
The content of the invention
The purpose of the present invention is：A kind of iii-nitride light emitting devices are provided, undoped MQW are grown, then more
The V-pits both sides of SQW form n-type doped channel region drawn game domain non-impurity-doped region by positioning doping, pass through non-impurity-doped
Region limits electronics leakage to V-pits, and n-type doped channel region then provides Electron Extended, transition and compound passage, carries
Rise luminous intensity and improve ESD；
A kind of iii-nitride light emitting devices, successively including substrate, N-type nitride, MQW, V-pits, n-type doping ditch
Road region, local non-impurity-doped region, V-pits local electronic barrier layer, p-type nitride, and p-type contact layer, its feature
It is：The V-pits both sides in the MQW region have local non-impurity-doped region, prevent electronics and holes-leakage to V-
pits；Meanwhile make the n-type doped channel region of formation quantum rank between V-pits and V-pits by positioning doping, make electricity
Son and hole limitation carry out transition and compound in this region, the combined efficiency for lifting carrier and the transverse direction for improving electric current and vertical
To extension, lifting luminous intensity and improvement ESD；The local of the top growth nanoscale in V-pits both sides local non-impurity-doped region
Electronic barrier layer, further stop that thermoelectron and holes-leakage to V-pits, reduce non-radiative recombination, lift luminous intensity and change
Kind electric leakage.
Further, the size in the n-type channel region is 50nm ~ 1000nm, and doping concentration is 1E17 ~ 1E20cm-3, it is excellent
Select 1E18 cm-3。
Further, the size in the local non-impurity-doped region is 50nm ~ 1000nm, concentration of background carriers be 1E15 ~
1E17cm-3。
Further, the V-pits in MQW region size is 50 ~ 500 nm.
Further, the material on the local electronic barrier layer is AlxGa1-xN, wherein 0≤x≤1, preferably x=0.2, chi
Very little size is 50 ~ 500nm, preferably 100nm.
Further, the substrate is sapphire, carborundum, silicon, gallium nitride, aluminium nitride, the suitable epitaxial growth of zinc oxide
Substrate.
Further, cushion is formed in the substrate.
Brief description of the drawings
Fig. 1 is conventional nitride luminous diode multi-quantum well V-pits schematic diagrames.
Fig. 2 is the iii-nitride light emitting devices V-pits of embodiment of the present invention schematic diagram.
Fig. 3 is the stop electrons spread of the iii-nitride light emitting devices of the embodiment of the present invention to V-pits and improves electronics horizontal stroke
To the schematic diagram of Longitudinal Extension.
Illustrate：100：Substrate, 101：Cushion, 102：N-type nitride, 103：MQW, 104：V-pits,
105：N-type doped channel region, 106：Local non-impurity-doped region, 107：V-pits local electronic barrier layer, 108：P-type nitrogenizes
Thing, 109：P-type contact layer.
Embodiment
Traditional iii-nitride light emitting devices, because lattice mismatch and thermal mismatching can be formed during nitride growth it is scarce
Fall into, the dislocation can extend to form V-pits when growing MQW, as shown in Figure 1；The V-pits forms non-radiative recombination center,
Cause electronics to be leaked easily by V-pits leak channel, form electric leakage and non-radiative recombination, reduce luminous intensity and ESD.
Leak channel and non-radiative recombination center, the nitride light-emitting two that the present embodiment proposes are formed in order to solve V-pits
Pole pipe, as shown in Fig. 2 including successively from bottom to up：Substrate 100, cushion 101, N-type nitride 102, MQW 103, V-
Pits 104, n-type doped channel region 105, local non-impurity-doped region 106, V-pits local electronic barrier layer 107, p-type nitrogen
Compound 108, p-type contact layer 109.
First, undoped MQW is grown, then, using the method for meridian tyre doping in V-pits and V-pits
Between carry out positioning doping, form the n-type doped channel region of quantum rank, doping concentration about 1E18cm-3；Meanwhile in V-
Pits both sides form local non-impurity-doped region, its concentration of background carriers about 5E16cm-3, by undoped resistive formation, prevent
Electronics and holes-leakage improve electric leakage and ESD, reduce non-radiative recombination to V-pits；V-pits and V- are entrained in by positioning
The n-type doped channel region formed between pits, limit to electronics and hole and transition and compound is carried out in this region, and as electricity
Extended channel is flowed, the combined efficiency for lifting carrier and the transverse direction and longitudinal direction extension for improving electric current, luminous intensity is lifted and changes
Kind ESD, as shown in Figure 3；Then, the local electronic of the top growth nanoscale in V-pits both sides local non-impurity-doped region stops
Layer, material is the Al that Al component x values are 0.2xGa1-xN, thickness 100nm, further stop thermoelectron and holes-leakage extremely
V-pits, reduces non-radiative recombination, and lifting luminous intensity and improvement are leaked electricity.
Embodiment of above is merely to illustrate the present invention, and is not intended to limit the present invention, those skilled in the art,
In the case of not departing from the spirit and scope of the present invention, various modifications and variation can be made to the present invention, thus it is all equivalent
Technical scheme fall within scope of the invention, scope of patent protection of the invention should regard Claims scope and limit.
Claims (8)
- A kind of 1. iii-nitride light emitting devices, successively including substrate, N-type nitride, MQW, V-pits, n-type doped channel Region, local non-impurity-doped region, V-pits local electronic barrier layer, p-type nitride, and p-type contact layer, its feature exist In：The V-pits both sides in the MQW region have a local non-impurity-doped region, on the local non-impurity-doped region of V-pits both sides The local electronic barrier layer of Fang Shengchang nanoscales, make to form quantum rank between V-pits and V-pits by positioning doping N-type doped channel region, electronics and holes-leakage is prevented to reduce non-radiative recombination to V-pits.
- A kind of 2. iii-nitride light emitting devices according to claim 1, it is characterised in that：The n-type doped channel region It is formed at by positioning doping between V-pits and V-pits so that electronics and hole limitation are in the progress transition of this region and again Close, lift the combined efficiency of carrier and improve the transverse direction and longitudinal direction extension of electric current, lifting luminous intensity and improvement ESD.
- A kind of 3. iii-nitride light emitting devices according to claim 1, it is characterised in that：V-pits both sides local without The local electronic barrier layer of the top growth nanoscale of doped region, for stopping thermoelectron and holes-leakage to V-pits, Non-radiative recombination is further reduced, lifts luminous intensity, and improve electric leakage.
- A kind of 4. iii-nitride light emitting devices according to claim 1, it is characterised in that：The n-type channel region it is big Small is 50nm ~ 1000nm, and doping concentration is 1E17 ~ 1E20cm-3。
- A kind of 5. iii-nitride light emitting devices according to claim 1, it is characterised in that：The local non-impurity-doped region Size is 50nm ~ 1000nm, and concentration of background carriers is 1E15 ~ 1E17cm-3。
- A kind of 6. iii-nitride light emitting devices according to claim 1, it is characterised in that：The V- in the MQW region Pits size is 50 ~ 500 nm.
- A kind of 7. iii-nitride light emitting devices according to claim 1, it is characterised in that：The local electronic barrier layer Material is AlxGa1-xN, wherein 0≤x≤1, size is 50 ~ 500nm.
- A kind of 8. iii-nitride light emitting devices according to claim 1, it is characterised in that：The substrate is sapphire, carbon SiClx, silicon, gallium nitride, aluminium nitride, zinc oxide are adapted to the substrate of epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610276668.8A CN105742438B (en) | 2016-04-29 | 2016-04-29 | A kind of iii-nitride light emitting devices |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610276668.8A CN105742438B (en) | 2016-04-29 | 2016-04-29 | A kind of iii-nitride light emitting devices |
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| Publication Number | Publication Date |
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| CN105742438A CN105742438A (en) | 2016-07-06 |
| CN105742438B true CN105742438B (en) | 2018-03-02 |
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| CN107845709B (en) * | 2017-10-10 | 2019-11-01 | 厦门三安光电有限公司 | A kind of nitride semiconductor LED |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013187484A (en) * | 2012-03-09 | 2013-09-19 | Sharp Corp | Nitride semiconductor light-emitting element and manufacturing method of the same |
| CN104576712A (en) * | 2013-10-28 | 2015-04-29 | 首尔伟傲世有限公司 | Semiconductor device and method of manufacturing the same |
| CN105161580A (en) * | 2015-08-25 | 2015-12-16 | 厦门市三安光电科技有限公司 | Equipment and method for manufacturing nitride light-emitting diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20100093872A (en) * | 2009-02-17 | 2010-08-26 | 삼성엘이디 주식회사 | Nitride semiconductor light emitting device and manufacturing method thereof |
| US8698163B2 (en) * | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013187484A (en) * | 2012-03-09 | 2013-09-19 | Sharp Corp | Nitride semiconductor light-emitting element and manufacturing method of the same |
| CN104576712A (en) * | 2013-10-28 | 2015-04-29 | 首尔伟傲世有限公司 | Semiconductor device and method of manufacturing the same |
| CN105161580A (en) * | 2015-08-25 | 2015-12-16 | 厦门市三安光电科技有限公司 | Equipment and method for manufacturing nitride light-emitting diode |
Non-Patent Citations (2)
| Title |
|---|
| Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits;Wang Min-Shuai,etc.;《IEEE ELECTRON DEVICE LETTERS》;20140320;第35卷(第4期);第464-466页 * |
| 含V形坑的Si衬底GaN基蓝光LED发光性能研究;吴小明;《中国博士学位论文全文数据库 工程科技Ⅰ辑》;20150531;B016-52 第1-119页 * |
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| CN105742438A (en) | 2016-07-06 |
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Effective date of registration: 20231025 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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