CN105742164A - Preparation method of ordered Sr/Si interface structure - Google Patents
Preparation method of ordered Sr/Si interface structure Download PDFInfo
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- CN105742164A CN105742164A CN201610225799.3A CN201610225799A CN105742164A CN 105742164 A CN105742164 A CN 105742164A CN 201610225799 A CN201610225799 A CN 201610225799A CN 105742164 A CN105742164 A CN 105742164A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims abstract description 18
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000013049 sediment Substances 0.000 claims description 10
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 10
- 239000012498 ultrapure water Substances 0.000 claims description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 9
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 241000931526 Acer campestre Species 0.000 claims description 5
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229960002050 hydrofluoric acid Drugs 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 235000014593 oils and fats Nutrition 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000011224 oxide ceramic Substances 0.000 claims description 5
- 210000004483 pasc Anatomy 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000004549 pulsed laser deposition Methods 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910002367 SrTiO Inorganic materials 0.000 description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H01L21/2026—
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a preparation method of an ordered Sr/Si interface structure. The method comprises the following steps of cleaning a silicon wafer substrate; depositing a strontium oxide nanometer film on the silicon substrate by a pulsed laser deposition method; and preparing a 2*1-Sr/Si monoatomic layer ordered surface structure. By high-vacuum deposition methods, such as a pulsed laser deposition technology or a radio-frequency magnetron sputtering deposition technology, strontium oxide which is 1nm thick is deposited on the silicon substrate free of an oxidation layer; and then annealing treatment is carried out within a certain temperature range for a certain time period, so that an Sr/Si interface buffer layer with a 2*1 structure is obtained. According to the preparation method disclosed by the invention, through utilization of a pulsed laser deposition coating technology and a strontium oxide material, the equipment cost is reduced; the stability of the raw material is improved; and the 2*1-Sr/Si ordered surface buffer layer structure is obtained through treatment of a subsequent annealing process.
Description
Technical field
The present invention relates to the preparation method of a kind of orderly Sr/Si interfacial structure, belong to semiconductor components and devices field.
Background technology
Along with the raising of integrated circuit integrated level, the gate insulating layer material SiO in cmos basic cell2Thickness continues thinning,
And SiO2Dielectric constant is only 3.9, works as SiO2Thickness be reduced to nanometer scale after, quantum tunneling effect now can occur, lead
Cause a large amount of electronics and pass through SiO2Insulating barrier so that leakage current is excessive causes cmos device to lose efficacy.For overcoming this problem, can be by
SiO2Insulating barrier replaces to the SrTiO that dielectric constant is 3003, accordingly even when insulating barrier keeps identical physical thickness, use
SrTiO3After leakage current can be reduced to use SiO2About the 1/100 of insulating barrier, so that cmos device can stablize work
Make.
In order to obtain high-quality SrTiO on a monocrystaline silicon substrate3Thin film, generally uses film deposition rate to be only 1～2nm/h
Molecular beam epitaxial growth technology, and at silicon and SrTiO3Between increase monoatomic layer thickness Sr/Si interface cushion, thus
Eliminate silicon substrate and SrTiO in subsequent high temperature processes3Middle oxygen reacts the problem bringing decreasing insulating.
In order to obtain the monatomic boundary layer of Sr/Si, generally use molecular beam epitaxial growth technology that Preparation of Metallic Strontium is deposited on non-oxidation layer
On silicon substrate.It is known that strontium is as a kind of active metal material, instability is easy to react life with oxygen in an atmosphere
Become strontium oxide, it is difficult to preserve；Additionally molecular beam epitaxy technique needs ultrahigh vacuum equipment, expensive.
Summary of the invention
The problems referred to above existed for the preparation method of the monatomic boundary layer of Sr/Si in prior art, the present invention provides a kind of orderly
The preparation method of Sr/Si interfacial structure, uses fine vacuum deposition process such as pulsed laser deposition or r. f. magnetron sputtering technology,
By in strontium oxide deposition thick for 1nm to the silicon substrate of non-oxidation layer, in certain temperature range, then make annealing treatment certain time,
Thus obtain the Sr/Si interface cushion with 2 × 1 structures.
Technical scheme is as follows:
The preparation method of a kind of orderly Sr/Si interfacial structure, comprises the steps:
Step 1: cleaning silicon chip substrate；
Step 2: use pulse laser sediment method deposited oxide strontium nano thin-film on a silicon substrate；
Step 3: the preparation orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
Further, described step 1 comprises the steps:
Step 1-1: use analytical pure acetone ultrasonic cleaning to remove the oils and fats that silicon chip surface exists；
Step 1-2: use ultra-pure water ultrasonic cleaning；
Step 1-3: the silicon chip after above-mentioned two steps are cleaned is put in Fluohydric acid. and soaks, to remove the oxide layer of silicon chip surface, from
And obtain non-oxidation layer silicon substrate；
Step 1-4: use ultra-pure water flowing to clean non-oxidation layer silicon chip clean to be removed by remaining hydrogen fluoric acid；
Step 1-5: use high pure nitrogen to dry up silicon chip, and quickly put into vacuum chamber.
Further, described step 2 comprises the steps:
Step 2-1: evacuation so that the base vacuum of vacuum chamber reaches 1.0 × 10-4Pa；
Step 2-2: underlayer temperature controls, temperature range is room temperature～350 DEG C；
Step 2-3: use pulse laser sediment method, target be purity be the strontium oxide ceramic material of 99.9%, heavy on silicon chip
Long-pending 0.5～2nm thick strontium oxide nano thin-film；Lasing condition is: optical maser wavelength 266nm, pulse frequency 10Hz, laser energy
Density 1～2J/cm, vacuum is 0.05Pa, sedimentation time 10～30 seconds.
Further, described step 3 comprises the steps:
Step 3-1: SrO/Si sample is heated to 550～650 DEG C, vacuum is 1.0 × 10-4Pa；
Step 3-2: keeping 0.5～1 hour at 550～650 DEG C, vacuum is 1.0 × 10-4Pa, in this thermostatic process, oxygen
Change oxygen and pasc reaction in strontium and generate gaseous oxidation Asia silicon spilling sample surfaces；
Step 3-3: in vacuum 1.0 × 10-4Under the conditions of Pa, sample is dropped to room temperature, is scanned tunnel microscope and characterizes measurement,
Obtain the orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
Further, in step 1-1, the purity of analytical pure acetone is 99%, and the ultrasonic cleaning time is 15 minutes, and silicon chip is electronics
The Si (100) of level purity；In step 1-2 and step 1-4, ultrapure resistivity of water is 15 megaohms；In step 1-3, hydrogen fluorine
The concentration of acid is 10%, and soak time is 10～30 seconds.
Beneficial effects of the present invention is as follows:
The preparation method of the present invention orderly Sr/Si interfacial structure, by pulsed laser deposition coating technique and the utilization of strontium oxide material,
I.e. reduce equipment cost, improve raw-material stability, obtain out further through the process of subsequent annealing process and there is 2 × 1-Sr/Si
Orderly surface buffer Rotating fields.
Accompanying drawing explanation
Fig. 1 is the surface scan tunnel microscope picture of the 2 × 1-Sr/Si using the method for the present invention to prepare.
Detailed description of the invention
With embodiment, the present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment one
The first step: the cleaning of silicon chip substrate:
1, the analytical pure acetone ultrasonic cleaning 15 minutes using purity to be 99% is to remove silicon chip (Si (100), electron level purity)
Surface oils and fats that may be present；
2, with 15 megaohms of ultra-pure water ultrasonic cleaning 3 times；
3, the silicon chip after above-mentioned two steps are cleaned is put into immersion 10 seconds in the Fluohydric acid. that concentration is 10%, to remove silicon chip surface
Oxide layer, thus obtain non-oxidation layer silicon substrate；
4,15 megaohms of ultra-pure water flowings are used to clean non-oxidation layer silicon chip clean to be removed by remaining hydrogen fluoric acid；
5, use high pure nitrogen to dry up silicon chip, and quickly put into vacuum chamber.
Second step: use pulse laser sediment method deposited oxide strontium nano thin-film on a silicon substrate:
1, evacuation so that the base vacuum of vacuum chamber reaches 1.0 × 10-4Pa；
2, underlayer temperature controls, and temperature is 25 DEG C；
3, use pulse laser sediment method, target be purity be the strontium oxide ceramic material of 99.9%, on silicon chip deposit 0.5
Thick strontium oxide nano thin-film, lasing condition is: optical maser wavelength 266nm, pulse frequency 10Hz, laser energy density 1J/cm,
Vacuum is 0.05Pa, sedimentation time 30 seconds.
3rd step: the preparation orderly surface texture of 2 × 1-Sr/Si monoatomic layer:
1, SrO/Si sample being heated to 550 DEG C, vacuum is 1.0 × 10-4Pa；
2, keeping 1h at 550 DEG C, vacuum is 1.0 × 10-4Pa, in this thermostatic process, in strontium oxide, oxygen is raw with pasc reaction
Gaseous oxidation Asia silicon is become to overflow sample surfaces；
3, in vacuum 1.0 × 10-4Under the conditions of Pa, sample is dropped to room temperature, be scanned tunnel microscope and characterize measurement, surface
Structure is the orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
Embodiment two
The first step: the cleaning of silicon chip substrate:
1, the analytical pure acetone ultrasonic cleaning 15 minutes using purity to be 99% is to remove silicon chip (Si (100), electron level purity)
Surface oils and fats that may be present；
2, with 15 megaohms of ultra-pure water ultrasonic cleaning 3 times；
3, by through above-mentioned two steps clean after silicon chip put in the Fluohydric acid. that concentration is 10% soak 20 with remove silicon chip surface oxygen
Change layer, thus obtain non-oxidation layer silicon substrate；
4,15 megaohms of ultra-pure water flowings are used to clean non-oxidation layer silicon chip clean to be removed by remaining hydrogen fluoric acid；
5, use high pure nitrogen to dry up silicon chip, and quickly put into vacuum chamber.
Second step: use pulse laser sediment method deposited oxide strontium nano thin-film on a silicon substrate:
1, evacuation so that the base vacuum of vacuum chamber reaches 1.0 × 10-4Pa；
2, underlayer temperature controls, and temperature is 180 DEG C；
3, use pulse laser sediment method, target be purity be the strontium oxide ceramic material of 99.9%, on silicon chip deposit 1.3nm
Thick strontium oxide nano thin-film, lasing condition is: optical maser wavelength 266nm, pulse frequency 10Hz, laser energy density 1.5J/cm,
Vacuum is 0.05Pa, sedimentation time 20 seconds.
3rd step: the preparation orderly surface texture of 2 × 1-Sr/Si monoatomic layer:
1, SrO/Si sample being heated to 600 DEG C, vacuum is 1.0 × 10-4Pa；
2, keeping 0.7h at 600 DEG C, vacuum is 1.0 × 10-4Pa, in this thermostatic process, oxygen and pasc reaction in strontium oxide
Generate gaseous oxidation Asia silicon and overflow sample surfaces；
3, in vacuum 1.0 × 10-4Under the conditions of Pa, sample is dropped to room temperature, be scanned tunnel microscope and characterize measurement, surface
Structure is the orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
Embodiment three
The first step: the cleaning of silicon chip substrate:
1, the analytical pure acetone ultrasonic cleaning 15 minutes using purity to be 99% is to remove silicon chip (Si (100), electron level purity)
Surface oils and fats that may be present；
2, with 15 megaohms of ultra-pure water ultrasonic cleaning 3 times；
3, the silicon chip after above-mentioned two steps are cleaned is put into immersion 30 seconds in the Fluohydric acid. that concentration is 10%, to remove silicon chip surface
Oxide layer, thus obtain non-oxidation layer silicon substrate；
4,15 megaohms of ultra-pure water flowings are used to clean non-oxidation layer silicon chip clean to be removed by remaining hydrogen fluoric acid；
5, use high pure nitrogen to dry up silicon chip, and quickly put into vacuum chamber.
Second step: use pulse laser sediment method deposited oxide strontium nano thin-film on a silicon substrate:
1, evacuation so that the base vacuum of vacuum chamber reaches 1.0 × 10-4Pa；
2, underlayer temperature controls, and temperature is 350 DEG C；
3, use pulse laser sediment method, target be purity be the strontium oxide ceramic material of 99.9%, on silicon chip deposit 2nm
Thick strontium oxide nano thin-film, lasing condition is: optical maser wavelength 266nm, pulse frequency 10Hz, laser energy density 2J/cm,
Vacuum is 0.05Pa, sedimentation time 5 seconds.
3rd step: the preparation orderly surface texture of 2 × 1-Sr/Si monoatomic layer:
1, SrO/Si sample being heated to 650 DEG C, vacuum is 1.0 × 10-4Pa；
2, keeping 0.5h at 650 DEG C, vacuum is 1.0 × 10-4Pa, in this thermostatic process, oxygen and pasc reaction in strontium oxide
Generate gaseous oxidation Asia silicon and overflow sample surfaces；
3, in vacuum 1.0 × 10-4Under the conditions of Pa, sample is dropped to room temperature, be scanned tunnel microscope and characterize measurement, surface
Structure is the orderly surface texture of 2 × 1-Sr/Si monoatomic layer shown in Fig. 1.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention.All spirit in the present invention and former
Any amendment, equivalent and the improvement etc. made within then, should be included within the scope of the present invention.
Claims (5)
1. a preparation method for orderly Sr/Si interfacial structure, comprises the steps:
Step 1: cleaning silicon chip substrate；
Step 2: use pulse laser sediment method deposited oxide strontium nano thin-film on a silicon substrate；
Step 3: the preparation orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
The preparation method of a kind of orderly Sr/Si interfacial structure the most according to claim 1, it is characterised in that: described step 1 is wrapped
Include following steps:
Step 1-1: use analytical pure acetone ultrasonic cleaning to remove the oils and fats that silicon chip surface exists；
Step 1-2: use ultra-pure water ultrasonic cleaning；
Step 1-3: the silicon chip after above-mentioned two steps are cleaned is put in Fluohydric acid. and soaks, to remove the oxide layer of silicon chip surface, from
And obtain non-oxidation layer silicon substrate；
Step 1-4: use ultra-pure water flowing to clean non-oxidation layer silicon chip clean to be removed by remaining hydrogen fluoric acid；
Step 1-5: use high pure nitrogen to dry up silicon chip, and quickly put into vacuum chamber.
The preparation method of a kind of orderly Sr/Si interfacial structure the most according to claim 1, it is characterised in that: described step 2 is wrapped
Include following steps:
Step 2-1: evacuation so that the base vacuum of vacuum chamber reaches 1.0 × 10-4Pa；
Step 2-2: underlayer temperature controls, temperature range is room temperature～350 DEG C；
Step 2-3: use pulse laser sediment method, target be purity be the strontium oxide ceramic material of 99.9%, heavy on silicon chip
Long-pending 0.5～2nm thick strontium oxide nano thin-film；Lasing condition is: optical maser wavelength 266nm, pulse frequency 10Hz, laser energy
Density 1～2J/cm, vacuum is 0.05Pa, sedimentation time 10～30 seconds.
The preparation method of a kind of orderly Sr/Si interfacial structure the most according to claim 1, it is characterised in that: described step 3 is wrapped
Include following steps:
Step 3-1: SrO/Si sample is heated to 550～650 DEG C, vacuum is 1.0 × 10-4Pa；
Step 3-2: keeping 0.5～1 hour at 550～650 DEG C, vacuum is 1.0 × 10-4Pa, in this thermostatic process, oxygen
Change oxygen and pasc reaction in strontium and generate gaseous oxidation Asia silicon spilling sample surfaces；
Step 3-3: in vacuum 1.0 × 10-4Under the conditions of Pa, sample is dropped to room temperature, is scanned tunnel microscope and characterizes measurement,
Obtain the orderly surface texture of 2 × 1-Sr/Si monoatomic layer.
The preparation method of a kind of orderly Sr/Si interfacial structure the most according to claim 2, it is characterised in that: in step 1-1, point
The purity of analysis pure acetone is 99%, and the ultrasonic cleaning time is 15 minutes, and silicon chip is the Si (100) of electron level purity；Step 1-2
With in step 1-4, ultrapure resistivity of water is 15 megaohms；In step 1-3, the concentration of Fluohydric acid. is 10%, and soak time is
10～30 seconds.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319634A (en) * | 2016-09-28 | 2017-01-11 | 常州工学院 | Preparation method of atomic-scale flat monocrystalline silicon (100) surface |
| CN106399929A (en) * | 2016-09-28 | 2017-02-15 | 常州工学院 | Preparation method of atomic flat Sr/Si(100)-(2 * 3) reconstruction surface |
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| US20050263774A1 (en) * | 2004-05-25 | 2005-12-01 | Samsung Electronics Co., Ltd | Polycrystalline Si thin film structure and fabrication method thereof and method of fabricating TFT using the same |
| CN101122048A (en) * | 2007-04-30 | 2008-02-13 | 浙江大学 | Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
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- 2016-04-12 CN CN201610225799.3A patent/CN105742164A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050263774A1 (en) * | 2004-05-25 | 2005-12-01 | Samsung Electronics Co., Ltd | Polycrystalline Si thin film structure and fabrication method thereof and method of fabricating TFT using the same |
| CN101122048A (en) * | 2007-04-30 | 2008-02-13 | 浙江大学 | Epitaxy strontium lead titanate film with LiNiO2 cushioning layer |
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| 杜文汉: "锶硅表面体系的扫描隧道显微镜研究", 《博士学位论文电子期刊》 * |
| 杨景景，杜文汉: "Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究", 《物理学报》 * |
| 邱云飞，杜文汉，王兵: "Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究", 《物理学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319634A (en) * | 2016-09-28 | 2017-01-11 | 常州工学院 | Preparation method of atomic-scale flat monocrystalline silicon (100) surface |
| CN106399929A (en) * | 2016-09-28 | 2017-02-15 | 常州工学院 | Preparation method of atomic flat Sr/Si(100)-(2 * 3) reconstruction surface |
| CN106319634B (en) * | 2016-09-28 | 2018-08-31 | 常州工学院 | A kind of atomically flating monocrystalline silicon（100）The preparation method on surface |
| CN106399929B (en) * | 2016-09-28 | 2018-10-30 | 常州工学院 | A kind of atomically flating Sr/Si（100）The preparation method on -2 × 3 structure surfaces again |
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