CN106399929B - A kind of atomically flating Sr/Si（100）The preparation method on -2 × 3 structure surfaces again - Google Patents

A kind of atomically flating Sr/Si（100）The preparation method on -2 × 3 structure surfaces again Download PDF

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CN106399929B
CN106399929B CN201610860393.2A CN201610860393A CN106399929B CN 106399929 B CN106399929 B CN 106399929B CN 201610860393 A CN201610860393 A CN 201610860393A CN 106399929 B CN106399929 B CN 106399929B
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杜文汉
杨景景
熊超
朱锡芳
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Changzhou Dingxian Electronics Co ltd
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Changzhou Institute of Technology
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    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Abstract

The invention discloses a kind of preparation methods on the structure surfaces again atomically flating Sr/Si (100) -2 × 3, belong to nm regime.A kind of preparation method on the structure surfaces again atomically flating Sr/Si (100) -2 × 3 of the present invention, using monocrystalline silicon (100) piece as substrate, step is：1) substrate cleans；2) substrate surface silica is removed, while preparing the structure surfaces again Si (100) -2 × 1；3) subband structures Preparation of Metallic Strontium film is prepared on Si (100) -2 × 1 again substrate on structure surface；4) the structure surfaces again atomically flating Sr/Si (100) -2 × 3 are prepared.Step of the present invention is simple, easy to operate, obtains the structure surface again the Sr/Si (100) -2 × 3 of atomically flating, and can accurately determine that the coverage of strontium is 1/6 monoatomic layer to Sr/Si (100) -2 × 3 on structure surface again.

Description

A kind of atomically flating Sr/Si（100）The preparation method on -2 × 3 structure surfaces again
Technical field
The present invention relates to a kind of preparation methods on the surface of structure again, more specifically to a kind of atomically flating Sr/Si The preparation method on (100) -2 × 3 structure surfaces again.
Background technology
With the raising of integrated circuit integrated level, the gate insulating layer material SiO in cmos basic cell2Thickness persistently subtracts It is thin, and SiO2Dielectric constant is only 3.9, works as SiO2Thickness be reduced to nanometer scale after, quantum tunneling effect can occur at this time, A large amount of electronics are caused to pass through SiO2Insulating layer so that leakage current is excessive to cause cmos device to fail.To overcome the problems, such as this, can incite somebody to action SiO2Insulating layer is substituted for the high oxide of dielectric constant, such as SrTiO3(dielectric constant 300), BaTiO3Deng.Accordingly even when grid Pole insulating layer keeps identical physical thickness, and can leakage current two be reduced after substituting silica using high dielectric constant oxide The order of magnitude, so that cmos device can be with steady operation.
Since there are the very strong dangling bonds of reactivity for the outermost layer silicon atom of monocrystalline silicon surface, if directly by high dielectric Constant oxide such as SrTiO3Being deposited thereon will make silicon face dangling bonds are reacted with the oxygen in oxide to generate silica, lead The epitaxial growth that cannot achieve high dielectric constant oxide on cause silicon, to reduce the dielectric properties of high dielectric constant oxide.
In order to realize high dielectric constant oxide SrTiO3Epitaxial growth on silicon, most crucial problem are silicon to be eliminated The dangling bonds of surface outermost layer silicon atom, and in strontium silicon face structure, it is accurate to determine that the surface coverage of strontium atom is to obtain It is passivated the key condition of silicon atom dangling bonds, and in strontium silicon face structure, the only Sr/Si with surface of stability structure (100) -2 × 3, it can determine that the surface coverage of strontium atom at this time is 1/6 monoatomic layer by first-principles calculations, it should Surface is there are the silicon dimer of dimerization, and silicon dimer is there are two kinds of arrangements of vertical and horizontal, and strontium atom occupies 2 × 3 structures again A stable position in unit, and the strontium atom can be formed to longitudinal silicon dimer transfer charge in 2 × 3 again structure unit The structure surfaces again stable Sr/Si (100) -2 × 3, therefore how to prepare the structure surface again the Sr/Si (100) -2 × 3 of atomically flating It is particularly important.
Invention content
1. technical problems to be solved by the inivention
It is an object of the present invention to overcome the above mentioned deficiencies, providing a kind of atomically flating Sr/Si (100) -2 × 3 again The preparation method on structure surface, technical solution using the present invention, step is simple, easy to operate, obtains the Sr/Si of atomically flating (100) -2 × 3 structure surfaces again, and can accurately determine that the coverage of strontium is 1/6 single former to Sr/Si (100) -2 × 3 on structure surface again Sublayer.
2. technical solution
In order to achieve the above objectives, technical solution provided by the invention is：
The preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the present invention, with monocrystalline silicon (100) Piece is substrate, and step is：
1) substrate cleans：
Monocrystalline silicon (100) piece 1-1) is cut into a certain size；
1-2) monocrystalline silicon of well cutting (100) piece is cleaned by ultrasonic in acetone；
1-3) monocrystalline silicon (100) piece after acetone is cleaned by ultrasonic is cleaned by ultrasonic using pure water；
Monocrystalline silicon (100) piece after pure water is cleaned by ultrasonic is dried up with high pure nitrogen 1-4), is then placed in vacuum chamber；
2) substrate surface silica is removed, while preparing the structure surfaces again Si (100) -2 × 1：
2-1) cavity of above-mentioned vacuum chamber is vacuumized so that base vacuum reaches 1 × 10-8Pa；
Underlayer temperature 2-2) is heated to 650 DEG C by the way of DC heating and is kept for 12 hours；
It 2-3) uses the mode of DC heating that underlayer temperature is heated to 1100 DEG C with certain heating rate and keeps 10 ~30s；
Underlayer temperature 2-4) is reduced to by room temperature with certain rate of temperature fall；
3) Si (100) -2 × 1 formed on a substrate prepares subband structures Preparation of Metallic Strontium film on structure surface again：
3-1) will through step 2), treated that substrate moves in sample preparation vacuum chamber, the cavity of sample preparation vacuum chamber is vacuumized, So that base vacuum reaches 1 × 10-6Pa；
3-2) 1 × 10-6Under the vacuum of Pa, substrate is heated, heating temperature is 500 DEG C；
3-3) pulsed laser deposition technique or electron beam evaporation technique is used to be deposited on Si (100) -2 × 1 again structure surface The Preparation of Metallic Strontium film of 0.5nm thickness；
4) the structure surfaces again atomically flating Sr/Si (100) -2 × 3 are prepared：
4-1) will be through step 3) treated substrate moves to analysis vacuum chamber, and will be analyzed using ionic pump and titanium sublimation pump The background vacuum of vacuum chamber is extracted into 1 × 10-8Pa；
4-2) by the silicon containing Preparation of Metallic Strontium film to 750 DEG C, and 5~10min is maintained at a temperature of 750 DEG C, Structure surface silicon dimer generation electronics transfer is anti-again with Si (100) -2 × 1 for strontium atom in Preparation of Metallic Strontium film in this thermostatic process It answers, while other than lateral silicon dimer existing for script on Si (100) -2 × 1 again structure surface, can also form longitudinal arrangement Silicon dimer；
Substrate temperature 4-3) is reduced to room temperature, while ensuring that the background vacuum of vacuum chamber maintains 1 × 10-8Pa, Can be obtained the structure surface again the Sr/Si (100) -2 × 3 of atomically flating, Sr/Si (100) -2 × 3 again on structure surface strontium covering Degree is 1/6 monoatomic layer.
Further, the technological parameter of pulsed laser deposition technique is in the step 3)：Laser power density is 1 ~10W/cm2, technique vacuum degree is 1 × 10-6~1 × 10-4Pa, Preparation of Metallic Strontium target, underlayer temperature are room temperature~500 DEG C, deposition Time is 1s~5s, film thickness 0.5nm.
Further, in the step 2) underlayer temperature from 650 DEG C to 1100 DEG C of heating rate be 20~50 DEG C/ S, underlayer temperature are 5~10 DEG C/s from 1100 DEG C to the rate of temperature fall of room temperature.
Further, monocrystalline silicon (100) piece cuts into 2 × 2cm in the step 1)2Size, monocrystalline silicon (100) piece It is cleaned by ultrasonic 3 times in acetone, the time being cleaned by ultrasonic every time is 15 minutes, and monocrystalline silicon (100) piece is using 15 megaohms of pure water It is cleaned by ultrasonic 3 times, the time being cleaned by ultrasonic every time is 10 minutes.
3. advantageous effect
Using technical solution provided by the invention, compared with existing known technology, there is following remarkable result：
(1) preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the invention, monocrystalline silicon (100) successively it is cleaned by ultrasonic in acetone and pure water, will be finally cleaned by ultrasonic monocrystalline silicon (100) piece and be dried up with high pure nitrogen, and grasp Facilitate, the organic matter on monocrystalline silicon (100) piece surface can be removed well；
(2) preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the invention, in step 2) Underlayer temperature is heated to 650 DEG C by the way of DC heating and is kept for 12 hours, it can to remove monocrystalline silicon (100) piece surface Organic matter existing for energy；
(3) preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the invention, removes substrate Surface Oxygen SiClx, while the structure surfaces again Si (100) -2 × 1 are prepared, monocrystalline silicon (100) piece Surface Oxygen is removed by flash evaporation technology SiClx, while obtaining structure and keeping the structure surfaces again complete Si (100) -2 × 1, there are the silicon atoms of dimerization on the surface, and There are a reactive pendant keys for each silicon atom, provide the foundation on structure surface again to prepare Sr/Si (100) -2 × 3；
(4) preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the invention, in Si (100) -2 × 1 prepare subband structures Preparation of Metallic Strontium film on structure surface again, since the activity of silicon atom dangling bonds is strong, if not using Source of the Preparation of Metallic Strontium as strontium atom, but if using other sources of such as strontium oxide strontia as strontium atom, easily so that oxygen The silicon dimer for changing oxygen atom and silicon face in strontium reacts, to destroy the neat silicon dimeric structure of silicon, therefore must Source of the Preparation of Metallic Strontium as strontium atom must be used；
(5) preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the invention is true in superelevation Monocrystalline silicon (100) piece Surface Oxygen SiClx is removed by flash evaporation technology under empty condition, while obtaining structure and keeping complete Si (100) -2 × 1 structure surfaces again, then by pulsed laser deposition technique or electron beam evaporation technique in the structure tables again of Si (100) -2 × 1 The Preparation of Metallic Strontium film that 0.5nm thickness is deposited on face, finally carries out annealing heat-treats, annealing temperature is under UHV condition 750 DEG C, annealing time is 5~10min, and strontium atom and Si (100) -2 × 1 be again in Preparation of Metallic Strontium film during annealing heat-treats Electron transfer reaction occurs for structure surface silicon dimer, while other than existing lateral silicon dimer itself, can also form longitudinal direction The silicon dimer of arrangement, you can obtain the structure surfaces again Sr/Si (100) -2 × 3, and the strontiums on structure surface again of Sr/Si (100) -2 × 3 Coverage be 1/6 monoatomic layer.
Description of the drawings
Fig. 1 is made by a kind of atomically flating Sr/Si (100) -2 × 3 of the invention again preparation method on structure surface The scanning tunneling microscope picture on the structure surfaces again the Sr/Si (100) -2 × 3 of atomically flating.
Specific implementation mode
To further appreciate that present disclosure, the present invention is described in detail in conjunction with the accompanying drawings and embodiments.
Embodiment 1
The preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the present embodiment, with monocrystalline silicon (100) piece is substrate, and step is：
1) substrate cleans：
Monocrystalline silicon (100) piece 1-1) is cut into a certain size, in the present embodiment monocrystalline silicon (100) piece cut into 2 × 2cm2Size；
1-2) monocrystalline silicon of well cutting (100) piece is cleaned by ultrasonic in acetone, monocrystalline silicon (100) piece exists in the present embodiment It is cleaned by ultrasonic 3 times in acetone, the time being cleaned by ultrasonic every time is 15 minutes；
1-3) monocrystalline silicon (100) piece after acetone is cleaned by ultrasonic is cleaned by ultrasonic using pure water, monocrystalline in the present embodiment Silicon (100) piece is cleaned by ultrasonic 3 times using 15 megaohms of pure water, and the time being cleaned by ultrasonic every time is 10 minutes；
Monocrystalline silicon (100) piece after pure water is cleaned by ultrasonic is dried up with high pure nitrogen 1-4), is then placed in vacuum chamber；
2) substrate surface silica is removed, while preparing the structure surfaces again Si (100) -2 × 1：
2-1) cavity of above-mentioned vacuum chamber is vacuumized so that base vacuum reaches 1 × 10-8Pa；
Underlayer temperature 2-2) is heated to 650 DEG C by the way of DC heating and is kept for 12 hours；
It 2-3) uses the mode of DC heating that underlayer temperature is heated to 1100 DEG C with certain heating rate and keeps 10s, in the present embodiment underlayer temperature from 650 DEG C to 1100 DEG C of heating rate be 20 DEG C/s；
Underlayer temperature 2-4) is reduced to by room temperature with certain rate of temperature fall, in the present embodiment underlayer temperature from 1100 DEG C to The rate of temperature fall of room temperature is 5 DEG C/s；
3) Si (100) -2 × 1 formed on a substrate prepares subband structures Preparation of Metallic Strontium film on structure surface again：
3-1) will through step 2), treated that substrate moves in sample preparation vacuum chamber, the cavity of sample preparation vacuum chamber is vacuumized, So that base vacuum reaches 1 × 10-6Pa；
3-2) 1 × 10-6Under the vacuum of Pa, substrate is heated, heating temperature is 500 DEG C；
3-3) pulsed laser deposition technique or electron beam evaporation technique is used to be deposited on Si (100) -2 × 1 again structure surface The Preparation of Metallic Strontium film of 0.5nm thickness, in the present embodiment using pulsed laser deposition technique on Si (100) -2 × 1 again structure surface Deposit the Preparation of Metallic Strontium film of 0.5nm thickness, laser power density 10W/cm2, technique vacuum degree is 1 × 10-6Pa, Preparation of Metallic Strontium target Material, underlayer temperature are 25 DEG C, sedimentation time 1s, film thickness 0.5nm；
4) the structure surfaces again atomically flating Sr/Si (100) -2 × 3 are prepared：
4-1) will be through step 3) treated substrate moves to analysis vacuum chamber, and will be analyzed using ionic pump and titanium sublimation pump The background vacuum of vacuum chamber is extracted into 1 × 10-8Pa；
4-2) by the silicon containing Preparation of Metallic Strontium film to 750 DEG C, and 5min is maintained at a temperature of 750 DEG C, at this Electron transfer reaction occurs strontium atom for structure surface silicon dimer again with Si (100) -2 × 1 in Preparation of Metallic Strontium film in thermostatic process, together When other than lateral silicon dimer existing for script on Si (100) -2 × 1 again structure surface, can also form the silicon dimerization of longitudinal arrangement Body；
Substrate temperature 4-3) is reduced to room temperature, while ensuring that the background vacuum for analyzing vacuum chamber maintains 1 × 10- 8Pa, background vacuum maintain 1 × 10-8Pa is in order to eliminate in vacuum cavity residual gas especially hydrone to the oxygen on surface Change acts on, you can obtains the structure surface again the Sr/Si (100) -2 × 3 of atomically flating, Sr/Si (100) -2 × 3 is again on structure surface The coverage of strontium is 1/6 monoatomic layer (shown in Figure 1).
Preparation principle is：First monocrystalline silicon (100) piece is cleaned, it is ensured that the organic matter on removal monocrystalline silicon (100) surface, Then 1 × 10-8Under the vacuum degree of Pa, using flash evaporation technology remove substrate surface silica, while prepare Si (100) -2 × 1 structure surface again provides basis in structure surface again to prepare Sr/Si (100) -2 × 3, then 1 × 10-6Under the vacuum degree of Pa, using arteries and veins Rush laser deposition technique or electron beam evaporation technique deposited on Si (100) -2 × 1 again structure surface 0.5nm thickness Preparation of Metallic Strontium it is thin Film, finally 1 × 10-8It is made annealing treatment under the vacuum degree of Pa, 5~10min is maintained at being 750 DEG C in annealing temperature so that Electron transfer reaction occurs strontium atom for structure surface silicon dimer again with Si (100) -2 × 1 in Preparation of Metallic Strontium film, while in addition to itself Outside existing transverse direction silicon dimer, the silicon dimer of longitudinal arrangement can be also formed, you can obtain the structure tables again of Sr/Si (100) -2 × 3 Face, and the coverage of strontium is 1/6 monoatomic layer to Sr/Si (100) -2 × 3 on structure surface again.
Embodiment 2
The preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the present embodiment, with monocrystalline silicon (100) piece is substrate, and step is：
1) substrate cleans：
Monocrystalline silicon (100) piece 1-1) is cut into a certain size, in the present embodiment monocrystalline silicon (100) piece cut into 2 × 2cm2Size；
1-2) monocrystalline silicon of well cutting (100) piece is cleaned by ultrasonic in acetone, monocrystalline silicon (100) piece exists in the present embodiment It is cleaned by ultrasonic 3 times in acetone, the time being cleaned by ultrasonic every time is 15 minutes；
1-3) monocrystalline silicon (100) piece after acetone is cleaned by ultrasonic is cleaned by ultrasonic using pure water, monocrystalline in the present embodiment Silicon (100) piece is cleaned by ultrasonic 3 times using 15 megaohms of pure water, and the time being cleaned by ultrasonic every time is 10 minutes；
Monocrystalline silicon (100) piece after pure water is cleaned by ultrasonic is dried up with high pure nitrogen 1-4), is then placed in vacuum chamber；
2) substrate surface silica is removed, while preparing the structure surfaces again Si (100) -2 × 1：
2-1) cavity of above-mentioned vacuum chamber is vacuumized so that base vacuum reaches 1 × 10-8Pa；
Underlayer temperature 2-2) is heated to 650 DEG C by the way of DC heating and is kept for 12 hours；
It 2-3) uses the mode of DC heating that underlayer temperature is heated to 1100 DEG C with certain heating rate and keeps 20s, in the present embodiment underlayer temperature from 650 DEG C to 1100 DEG C of heating rate be 35 DEG C/s；
Underlayer temperature 2-4) is reduced to by room temperature with certain rate of temperature fall, in the present embodiment underlayer temperature from 1100 DEG C to The rate of temperature fall of room temperature is 8 DEG C/s；
3) Si (100) -2 × 1 formed on a substrate prepares subband structures Preparation of Metallic Strontium film on structure surface again：
3-1) will through step 2), treated that substrate moves in sample preparation vacuum chamber, the cavity of sample preparation vacuum chamber is vacuumized, So that base vacuum reaches 1 × 10-6Pa；
3-2) 1 × 10-6Under the vacuum of Pa, substrate is heated, heating temperature is 500 DEG C；
3-3) pulsed laser deposition technique or electron beam evaporation technique is used to be deposited on Si (100) -2 × 1 again structure surface The Preparation of Metallic Strontium film of 0.5nm thickness, in the present embodiment using pulsed laser deposition technique on Si (100) -2 × 1 again structure surface Deposit the Preparation of Metallic Strontium film of 0.5nm thickness, laser power density 6W/cm2, technique vacuum degree is 5 × 10-5Pa, Preparation of Metallic Strontium target, Underlayer temperature is 260 DEG C, sedimentation time 3s, film thickness 0.5nm of room temperature；
4) the structure surfaces again atomically flating Sr/Si (100) -2 × 3 are prepared：
4-1) will be through step 3) treated substrate moves to analysis vacuum chamber, and will be analyzed using ionic pump and titanium sublimation pump The background vacuum of vacuum chamber is extracted into 1 × 10-8Pa；
4-2) by the silicon containing Preparation of Metallic Strontium film to 750 DEG C, and 8min is maintained at a temperature of 750 DEG C, at this Electron transfer reaction occurs strontium atom for structure surface silicon dimer again with Si (100) -2 × 1 in Preparation of Metallic Strontium film in thermostatic process, together When other than lateral silicon dimer existing for script on Si (100) -2 × 1 again structure surface, can also form the silicon dimerization of longitudinal arrangement Body；
Substrate temperature 4-3) is reduced to room temperature, while ensuring that the background vacuum for analyzing vacuum chamber maintains 1 × 10- 8Pa, you can obtain the structure surface again the Sr/Si (100) -2 × 3 of atomically flating, the strontiums on structure surface again of Sr/Si (100) -2 × 3 Coverage is 1/6 monoatomic layer.
Embodiment 3
The preparation method on the structure surfaces again a kind of atomically flating Sr/Si (100) -2 × 3 of the present embodiment, with monocrystalline silicon (100) piece is substrate, and step is：
1) substrate cleans：
Monocrystalline silicon (100) piece 1-1) is cut into a certain size, in the present embodiment monocrystalline silicon (100) piece cut into 2 × 2cm2Size；
1-2) monocrystalline silicon of well cutting (100) piece is cleaned by ultrasonic in acetone, monocrystalline silicon (100) piece exists in the present embodiment It is cleaned by ultrasonic 3 times in acetone, the time being cleaned by ultrasonic every time is 15 minutes；
1-3) monocrystalline silicon (100) piece after acetone is cleaned by ultrasonic is cleaned by ultrasonic using pure water, monocrystalline in the present embodiment Silicon (100) piece is cleaned by ultrasonic 3 times using 15 megaohms of pure water, and the time being cleaned by ultrasonic every time is 10 minutes；
Monocrystalline silicon (100) piece after pure water is cleaned by ultrasonic is dried up with high pure nitrogen 1-4), is then placed in vacuum chamber；
2) substrate surface silica is removed, while preparing the structure surfaces again Si (100) -2 × 1：
2-1) cavity of above-mentioned vacuum chamber is vacuumized so that base vacuum reaches 1 × 10-8Pa；
Underlayer temperature 2-2) is heated to 650 DEG C by the way of DC heating and is kept for 12 hours；
It 2-3) uses the mode of DC heating that underlayer temperature is heated to 1100 DEG C with certain heating rate and keeps 30s, in the present embodiment underlayer temperature from 650 DEG C to 1100 DEG C of heating rate be 50 DEG C/s；
Underlayer temperature 2-4) is reduced to by room temperature with certain rate of temperature fall, in the present embodiment underlayer temperature from 1100 DEG C to The rate of temperature fall of room temperature is 10 DEG C/s；
3) Si (100) -2 × 1 formed on a substrate prepares subband structures Preparation of Metallic Strontium film on structure surface again：
3-1) will through step 2), treated that substrate moves in sample preparation vacuum chamber, the cavity of sample preparation vacuum chamber is vacuumized, So that base vacuum reaches 1 × 10-6Pa；
3-2) 1 × 10-6Under the vacuum of Pa, substrate is heated, heating temperature is 500 DEG C；
3-3) pulsed laser deposition technique or electron beam evaporation technique is used to be deposited on Si (100) -2 × 1 again structure surface The Preparation of Metallic Strontium film of 0.5nm thickness, in the present embodiment using pulsed laser deposition technique on Si (100) -2 × 1 again structure surface Deposit the Preparation of Metallic Strontium film of 0.5nm thickness, laser power density 10W/cm2, technique vacuum degree is 1 × 10-4Pa, Preparation of Metallic Strontium target Material, underlayer temperature are 500 DEG C, sedimentation time 1s, film thickness 0.5nm；
4) the structure surfaces again atomically flating Sr/Si (100) -2 × 3 are prepared：
4-1) will be through step 3) treated substrate moves to analysis vacuum chamber, and will be analyzed using ionic pump and titanium sublimation pump The background vacuum of vacuum chamber is extracted into 1 × 10-8Pa；
4-2) by the silicon containing Preparation of Metallic Strontium film to 750 DEG C, and 10min is maintained at a temperature of 750 DEG C, at this Electron transfer reaction occurs strontium atom for structure surface silicon dimer again with Si (100) -2 × 1 in Preparation of Metallic Strontium film in thermostatic process, together When other than lateral silicon dimer existing for script on Si (100) -2 × 1 again structure surface, can also form the silicon dimerization of longitudinal arrangement Body；
Substrate temperature 4-3) is reduced to room temperature, while ensuring that the background vacuum for analyzing vacuum chamber maintains 1 × 10- 8Pa, background vacuum maintain 1 × 10-8Pa is in order to eliminate in vacuum cavity residual gas especially hydrone to the oxygen on surface Change acts on, you can obtains the structure surface again the Sr/Si (100) -2 × 3 of atomically flating, Sr/Si (100) -2 × 3 is again on structure surface The coverage of strontium is 1/6 monoatomic layer.
A kind of preparation method on the structure surfaces again atomically flating Sr/Si (100) -2 × 3 of the present invention, step is simple, operation It is convenient, the structure surface again the Sr/Si (100) -2 × 3 of atomically flating is obtained, and can accurately determine the structures again of Sr/Si (100) -2 × 3 The coverage of strontium is 1/6 monoatomic layer on surface.
Schematically the present invention and embodiments thereof are described above, description is not limiting, institute in attached drawing What is shown is also one of embodiments of the present invention, and actual structure is not limited to this.So if the common skill of this field Art personnel are enlightened by it, without departing from the spirit of the invention, are not inventively designed and the technical solution Similar frame mode and embodiment, are within the scope of protection of the invention.

Claims (4)

1. a kind of atomically flating Sr/Si（100）The preparation method on -2 × 3 structure surfaces again, with monocrystalline silicon（100）Piece is substrate, Its step is：
1）Substrate cleans：
1-1）By monocrystalline silicon（100）Piece cuts into a certain size；
1-2）By the monocrystalline silicon of well cutting（100）Piece is cleaned by ultrasonic in acetone；
1-3）By the monocrystalline silicon after acetone is cleaned by ultrasonic（100）Piece is cleaned by ultrasonic using pure water；
1-4）By the monocrystalline silicon after pure water is cleaned by ultrasonic（100）Piece is dried up with high pure nitrogen, is then placed in vacuum chamber；
2）Substrate surface silica is removed, while preparing Si（100）- 2 × 1 structure surface again：
2-1）The cavity of above-mentioned vacuum chamber is vacuumized so that base vacuum reaches 1 × 10-8Pa；
2-2）Underlayer temperature is heated to 650 DEG C by the way of DC heating and is kept for 12 hours；
2-3）It uses the mode of DC heating that underlayer temperature is heated to 1100 DEG C with certain heating rate and keeps 10 ~ 30s；
2-4）Underlayer temperature is reduced to room temperature with certain rate of temperature fall；
3）Si formed on a substrate（100）- 2 × 1 prepares subband structures Preparation of Metallic Strontium film on structure surface again：
3-1）It will be through step 2）Treated, and substrate moves in sample preparation vacuum chamber, and the cavity of sample preparation vacuum chamber is vacuumized so that Base vacuum reaches 1 × 10-6Pa；
3-2）1 × 10-6Under the vacuum of Pa, substrate is heated, heating temperature is 500 DEG C；
3-3）Using pulsed laser deposition technique or electron beam evaporation technique in Si（100）- 2 × 1 deposits 0.5nm on structure surface again The Preparation of Metallic Strontium film of thickness；
4）Prepare atomically flating Sr/Si（100）- 2 × 3 structure surfaces again：
4-1）It will be through step 3）Treated, and substrate moves to analysis vacuum chamber, and will analyze vacuum using ionic pump and titanium sublimation pump The background vacuum of chamber is extracted into 1 × 10-8Pa；
4-2）By the silicon containing Preparation of Metallic Strontium film to 750 DEG C, and 5 ~ 10min is maintained at a temperature of 750 DEG C, in this perseverance Strontium atom and Si in Preparation of Metallic Strontium film during temperature（100）- 2 × 1 again structure surface silicon dimer occur electron transfer reaction, simultaneously In addition to Si（100）- 2 × 1 again on structure surface outside lateral silicon dimer existing for script, can also form the silicon dimerization of longitudinal arrangement Body；
4-3）Substrate temperature is reduced to room temperature, while ensuring that the background vacuum for analyzing vacuum chamber maintains 1 × 10-8Pa, It can be obtained the Sr/Si of atomically flating（100）- 2 × 3 structure surfaces again, Sr/Si（100）- 2 × 3 again on structure surface strontium covering Degree is 1/6 monoatomic layer.
2. a kind of atomically flating Sr/Si according to claim 1（100）The preparation method on -2 × 3 structure surfaces again, it is special Sign is：The step 3）The technological parameter of middle pulsed laser deposition technique is：Laser power density is 1 ~ 10W/cm2, work Skill vacuum degree is 1 × 10-6~1×10-4Pa, Preparation of Metallic Strontium target, underlayer temperature are room temperature ~ 500 DEG C, and sedimentation time is 1s ~ 5s, thin Film thickness is 0.5nm.
3. a kind of atomically flating Sr/Si according to claim 2（100）The preparation method on -2 × 3 structure surfaces again, it is special Sign is：The step 2）Middle underlayer temperature is 20 ~ 50 DEG C/s from 650 DEG C to 1100 DEG C of heating rate, and underlayer temperature is certainly 1100 DEG C of rate of temperature fall to room temperature are 5 ~ 10 DEG C/s.
4. a kind of atomically flating Sr/Si according to claim 3（100）The preparation method on -2 × 3 structure surfaces again, it is special Sign is：The step 1）Middle monocrystalline silicon（100）Piece cuts into 2 × 2cm2Size, monocrystalline silicon（100）Piece is ultrasonic in acetone Cleaning 3 times, the time being cleaned by ultrasonic every time are 15 minutes, monocrystalline silicon（100）Piece is cleaned by ultrasonic 3 times using 15 megaohms of pure water, The time being cleaned by ultrasonic every time is 10 minutes.
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