CN101122048A - Epitaxy strontium lead titanate film with LiNiO2 cushioning layer - Google Patents
Epitaxy strontium lead titanate film with LiNiO2 cushioning layer Download PDFInfo
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- CN101122048A CN101122048A CNA2007100684487A CN200710068448A CN101122048A CN 101122048 A CN101122048 A CN 101122048A CN A2007100684487 A CNA2007100684487 A CN A2007100684487A CN 200710068448 A CN200710068448 A CN 200710068448A CN 101122048 A CN101122048 A CN 101122048A
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- lead titanate
- strontium
- lithium nickelate
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- KHKWDWDCSNXIBH-UHFFFAOYSA-N [Sr].[Pb] Chemical compound [Sr].[Pb] KHKWDWDCSNXIBH-UHFFFAOYSA-N 0.000 title claims description 63
- 238000000407 epitaxy Methods 0.000 title description 5
- 229910003005 LiNiO2 Inorganic materials 0.000 title 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 59
- 238000005245 sintering Methods 0.000 claims abstract description 37
- MFEVGQHCNVXMER-UHFFFAOYSA-L 1,3,2$l^{2}-dioxaplumbetan-4-one Chemical compound [Pb+2].[O-]C([O-])=O MFEVGQHCNVXMER-UHFFFAOYSA-L 0.000 claims abstract description 19
- 229910000003 Lead carbonate Inorganic materials 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims abstract description 19
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 claims abstract description 19
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 19
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 19
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000002360 preparation method Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 20
- 238000004549 pulsed laser deposition Methods 0.000 claims description 19
- 238000000748 compression moulding Methods 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 6
- 239000002253 acid Substances 0.000 abstract 3
- 229910052759 nickel Inorganic materials 0.000 abstract 3
- 239000013077 target material Substances 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 229910052808 lithium carbonate Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000012071 phase Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 30
- 238000002791 soaking Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 8
- 238000000227 grinding Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910002340 LaNiO3 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005284 basis set Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention discloses an extent BST film with nickel acid lithium buffer layer and a preparation method of the film. A layer of buffer layer conductive electrode LNO film is deposited on one surface of the MgO matrix, and a layer of perovskite phase PST film is deposited on the buffer layer conductive electrode LNO film. The procedures are as follows: First, a nickel acid lithium target material and a BST target material are respectively preparation by the solid phase sintering method, with lithium carbonate, nickel oxide, lead carbonate, strontium carbonate and titanium oxide as raw materials; next, the (001) MgO basal is cleaned and put into a reaction chamber, vacuum pumping is conducted to the reaction chamber, the basal is heated, the oxygen is fed into the reaction chamber as a protective gas; the pulse laser is splashed to the target materials; the nickel acid lithium buffer layer and the BST film are subsequently extent and deposited on the basal. The preparation method of the invention is simple; the prepared BST film has good extensionality and high quality; and the medium controllability of the film can be up to 40 to 70percent.
Description
Technical field
The present invention relates to prepare a kind of extension strontium lead titanate film and preparation method with lithium nickelate buffer layer with the PLD method.
Background technology
In recent years, the adjustable dielectric materials of microwave has been widely used on the adjustable components and parts of microwave, as the phase shifter on the phased array antenna, resonator, wave filter etc.With regard to research system, mainly concentrate on uhligite phase ferroelectric material at present, as strontium-barium titanate (BST) and doped series thereof.Because various film preparing technologies all have the deficiency of himself, the technological factor that in addition influences film quality is more, so far for it, obtains to possess very desirable high tuning and the low-loss material of getting simultaneously as yet.Discovery strontium lead titanate (PST) potteries such as nearest Cross have higher adjustability and quite low dielectric loss, are a kind of materials that is highly suitable for the electric field adjusting element.Compare with BST, especially as thin-film material, the ferroelectric critical size of PST is less, crystallization temperature is lower, preparation technology and Si microelectronic technique compatibility, more can satisfy the needs that high performance Si basis set becomes circuit, to the miniaturization that promotes the modern device development with integratedly have a crucial meaning.As microwave dielectric material, in order to obtain better application in the adjustable microwave device, material should have (ratio of tunable performance and dielectric loss) of the higher figure of merit.Thereby dielectric materials should have following performance: under microwave frequency, on the one hand, specific inductivity is low, and defective will be lacked, and dielectric loss and leakage current are low; On the other hand, under the direct-current biasing electric field, it is big that the variation of specific inductivity is wanted, and higher tunable performance is arranged.
Along with the miniaturization of modern device development and integrated, thin-film material has shown its distinctive superiority, thereby the research of thin-film material has obtained suitable attention.Equally, the research work of PST film is also begun, existing existing report obtains the dielectric-constant adjustable of PST film with sol-gel process, and (50%～20%), dielectric loss are (2～5%) approximately.Compare with the data of people such as Cross report, the performance of film also reaches expected value far away, and therefore many problems are anxious to be treated in depth to study and solve.
By methods such as doping and orientations, can carry out modification to material effectively.And prepare the epitaxial orientation material by epitaxy method, can realize single crystal growing, defective control and the crystal property improvement etc. of material reaching the purpose of optimizing material property.Have and be reported in monocrystal material substrate such as STO (001), MgO (001), Si (001) etc. go up directly deposition preparation PST thin-film material, obtain result highly significant.Wherein, because the MgO substrate is transparent and have less specific inductivity and dielectric loss, be regarded as one of optimal baseplate material.Yet,, greatly reduced the dielectric properties of film because the lattice parameter of MgO baseplate material and PST thin-film material and incomplete coupling cause having stress between film and the substrate.S.W.Liu etc. are at Applied Physics Letters, 2005 Vol.87 No.142905 write articles and point out, though MgO (001) is for being suitable for one of substrate for preparing extension PST, but the dielectric adjustable of gained film only is 30%～40%, these data with people such as Cross report are compared and are differed bigger, and the result who promptly obtains is also not very good yet.From can know the correlative study result to material in the past, the increase buffer layer can produce bigger influence to the performance of associated materials, thereby in order to obtain best dielectric properties and microwave tunable performance, can consider to utilize buffer layer to improve the matching degree of PST film and baseplate material, to improve the dielectric properties of PST film on the MgO substrate.But the existence of buffer layer obviously can hinder the extension effect of MgO substrate to the PST film.On the one hand, consider that MgO substrate itself is non-conductive again, practical application then needs the bottom electrode of one deck conduction, therefore must solve the problem of introducing conductive electrode between MgO substrate and PST.Thereby, could solve the problem of existence if can develop a kind of material that had not only conducted electricity but also had the epitaxy propagation function and have the buffer layer effect simultaneously.Utilize the LaNiO3 layer to reach when only on Si (001) substrate, depositing the PST film at present and both have electric action, the purpose that has the epitaxy propagation function again, but, therefore can not be used for the preparation of (001) orientation PST film on MgO (001) substrate because LaNiO3 is (110) orientation.Buffer layer that the present invention adopts lithium nickelate to transmit as conduction and epitaxy has successfully prepared the PST film of (001) orientation, extension on MgO (001) substrate.And every dielectric properties of this extension PST material are all very excellent, and especially the dielectric adjustable of material can reach 40%～70%, have goodish using value.
Summary of the invention
The object of the present invention is to provide with the PLD method and prepare a kind of extension strontium lead titanate film and preparation method with lithium nickelate buffer layer.
The step of the technical solution used in the present invention is as follows:
1, a kind of extension strontium lead titanate film with lithium nickelate buffer layer
Deposition one deck buffer layer conductive electrode LNO film deposits one deck uhligite phase PST film again on buffer layer conductive electrode LNO film on the one side of MgO substrate.
Described strontium lead titanate film transmitance is 30%～60%, and specific conductivity is 2 * 10
-3～3 * 10
-3Ω m.
2, a kind of preparation method with extension strontium lead titanate film of lithium nickelate buffer layer, the step of this method is as follows:
1) be raw material with Quilonum Retard and nickel oxide, by the quality percentage composition 10%～20% Quilonum Retard with after 80%～90% nickel oxide mixes, ground 3～5 hours, with pressure is 2～10MPa compression moulding, and in air sintering, sintering temperature is 800～900 ℃, temperature rise rate is 100～600 ℃/h, insulation 1～3h obtains the lithium nickelate target after dropping to normal temperature;
2) be raw material with lead carbonate, Strontium carbonate powder and titanium oxide, by the quality percentage composition is after 20%～30% lead carbonate, 15%～25% Strontium carbonate powder and 45%～65% titanium oxide mix, ground 3～5 hours, with pressure is 2～10MPa compression moulding, and in air sintering, sintering temperature is 800～900 ℃, temperature rise rate is 100～600 ℃/h, insulation 1～3h obtains the strontium lead titanate target after dropping to normal temperature;
4) adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, the substrate temperature scope is 500～600 ℃;
5) adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, the substrate temperature scope is 700～800 ℃.
Described strontium lead titanate film has good epitaxial nature, and between-20v～20v extra electric field, dielectric adjustable is between 40% to 70%.
The present invention compares the useful effect that has with background technology:
1, adopt the strontium lead titanate ferroelectric membranc of conduction extension lithium nickelate buffer layer preparation, the film quality of preparation is better, and described strontium lead titanate film has good epitaxial nature, and the rocking curve value is 0.8 °～0.9 °.The thin film crystallization performance can increase under the effect of buffer layer.
2, because buffer layer can reduce stress between film and the substrate, thereby the specific inductivity of material increases, and dielectric loss obviously reduces.
3, adopt the strontium lead titanate ferroelectric membranc of conduction extension lithium nickelate buffer layer preparation, have the higher dielectric adjustable and the figure of merit preferably.Experiment shows that when substrate temperature was 850 ℃, the dielectric adjustable of strontium lead titanate film was 70%, and the figure of merit is 12.
4, adopt the extension high dielectric adjustable strontium lead titanate ferroelectric membranc of conduction extension lithium nickelate buffer layer preparation, preparing technique process is simple, and is with low cost, has good market outlook.
Description of drawings
Fig. 1 is a structure principle chart of the present invention.
To be utilization of the present invention conduction extension lithium nickelate prepare the XRD curve of extension high dielectric adjustable strontium lead titanate film material and the rocking curve of the rocking curve of strontium lead titanate film material and lithium nickelate buffer layer for buffer layer to Fig. 2.
Fig. 3 is utilization conduction extension lithium nickelate of the present invention prepares extension high dielectric adjustable strontium lead titanate film material for buffer layer a PHI scanning curve.
Fig. 4 is utilization conduction extension lithium nickelate of the present invention prepares extension high dielectric adjustable strontium lead titanate film material for buffer layer surface topography and a sectional drawing.
Fig. 5 is the specific conductivity and the transmittance curve of conduction epitaxial buffer layer lithium nickelate thin-film material of the present invention;
Fig. 6 is utilization conduction extension lithium nickelate of the present invention prepares extension high dielectric adjustable strontium lead titanate film material for buffer layer specific inductivity and a dielectric loss curve.
Fig. 7 is utilization conduction extension lithium nickelate of the present invention prepares extension high dielectric adjustable strontium lead titanate film material for buffer layer a dielectric adjustable curve.
Embodiment
As shown in Figure 1, the present invention deposits one deck buffer layer conductive electrode LNO film 2 on the one side of MgO substrate 1, deposits one deck uhligite phase PST film 3 on buffer layer conductive electrode LNO film 2 again.
Described strontium lead titanate film transmitance is 30%～60%, and specific conductivity is 2 * 10
-3～3 * 10
-3Ω m.
Embodiment 1:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 15% Quilonum Retard with after 85% nickel oxide mixes, ground 4 hours, with pressure is 5MPa compression moulding, and in air sintering, sintering temperature is 850 ℃, temperature rise rate is controlled to be 300 ℃/h, soaking time is controlled at 2h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 25% lead carbonate, 20% Strontium carbonate powder is with after 55% titanium oxide mixes, grinding 4 hours, is 6MPa compression moulding with pressure, and in air sintering, sintering temperature is 880 ℃, temperature rise rate is controlled to be 400 ℃/h, and soaking time is controlled at 2.5h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 550 ℃; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 750 ℃, obtains uhligite phase PST film.The X-ray diffractogram of the extension strontium lead titanate film that generates under the present embodiment condition is seen accompanying drawing 2, and film is 100kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v is 65%.
Embodiment 2:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 10% Quilonum Retard with after 90% nickel oxide mixes, ground 3 hours, with pressure is 2MPa compression moulding, and in air sintering, sintering temperature is 800 ℃, temperature rise rate is controlled to be 100 ℃/h, soaking time is controlled at 1h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 30% lead carbonate, 25% Strontium carbonate powder is with after 45% titanium oxide mixes, grinding 5 hours, is 10MPa compression moulding with pressure, and in air sintering, sintering temperature is 900 ℃, temperature rise rate is controlled to be 600 ℃/h, and soaking time is controlled at 3h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 600 ℃; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 680 ℃, obtains uhligite phase PST film.The PHI-scanning curve of the extension strontium lead titanate film that generates under this example condition is seen accompanying drawing 3, and film is 100kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v is 57%.
Embodiment 3:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 20% Quilonum Retard with after 80% nickel oxide mixes, ground 5 hours, with pressure is 10MPa compression moulding, and in air sintering, sintering temperature is 900 ℃, temperature rise rate is controlled to be 600 ℃/h, soaking time is controlled at 3h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 20% lead carbonate, 25% Strontium carbonate powder is with after 55% titanium oxide mixes, grinding 3 hours, is 2MPa compression moulding with pressure, and in air sintering, sintering temperature is 800 ℃, temperature rise rate is 100 ℃/h, and soaking time is controlled at 1～3h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 500 ℃; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 700 ℃, obtains uhligite phase PST film.The surface topography and the section of the extension strontium lead titanate film that generates under this example condition are seen accompanying drawing 4, and film is 100kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v is 60%.
Embodiment 4:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 16% Quilonum Retard with after 84% nickel oxide mixes, ground 3.3 hours, with pressure is 7.5 MPa compression mouldings, and in air sintering, sintering temperature is 830 ℃, temperature rise rate is 250 ℃/h, soaking time is 2h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 23% lead carbonate, 20% Strontium carbonate powder is with after 57% titanium oxide mixes, grinding 5 hours, is 6MPa compression moulding with pressure, and in air sintering, sintering temperature is 900 ℃, temperature rise rate is 500 ℃ of h, and soaking time is 1h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 600 ℃, obtains the lithium nickelate buffer layer thin film; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 730 ℃, obtains uhligite phase PST film.The specific conductivity and the transmitance of the lithium nickelate buffer layer that generates under this example condition are seen accompanying drawing 5, and the extension strontium lead titanate film is 100kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v is 50%.
Embodiment 5:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 12% Quilonum Retard with after 88% nickel oxide mixes, ground 4.5 hours, with pressure is 7MPa compression moulding, and in air sintering, sintering temperature is 870 ℃, temperature rise rate is 400 ℃/h, soaking time is 2h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, is 23% lead carbonate by the quality percentage composition, 20%
Strontium carbonate powder ground 5 hours with after 57% titanium oxide mixes, and was 6MPa compression moulding with pressure, and in air sintering, sintering temperature is 900 ℃, temperature rise rate is 500 ℃ of h, soaking time is 1h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilization/pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 600 ℃; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 710 ℃, obtains the uhligite phase PST film of (001) orientation.Accompanying drawing 6 is seen in the electric capacity and the loss of the extension strontium lead titanate film that generates under this example condition, and film is 10kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v is 47%.
Embodiment 6:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 17% Quilonum Retard with after 83% nickel oxide mixes, ground 3 hours, with pressure is 5MPa compression moulding, and in air sintering, sintering temperature is 850 ℃, temperature rise rate is 300 ℃/h, soaking time is controlled at 1h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 26% lead carbonate, 15% Strontium carbonate powder is with after 59% titanium oxide mixes, grinding 3 hours, is 5MPa compression moulding with pressure, and in air sintering, sintering temperature is 850 ℃, temperature rise rate is 300 ℃/h, and soaking time is controlled at 2h, obtains the strontium lead titanate target after dropping to normal temperature; Adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, substrate temperature is 600 ℃; Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 850 ℃, obtains uhligite phase PST film.The extension strontium lead titanate film that generates under this example condition is 10kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v seen accompanying drawing 6 (a), and as seen from the figure, the dielectric adjustable of strontium lead titanate film is 70%.
Embodiment 7:
With Quilonum Retard and nickel oxide is raw material, by the quality percentage composition 16% Quilonum Retard with after 84% nickel oxide mixes, ground 4 hours, with pressure is 10MPa compression moulding, and in air sintering, sintering temperature is 840 ℃, temperature rise rate is 300 ℃/h, soaking time is controlled at 1h, obtains the lithium nickelate target after dropping to normal temperature; With lead carbonate, Strontium carbonate powder and titanium oxide is raw material, it by the quality percentage composition 22% lead carbonate, 18% Strontium carbonate powder is with after 60% titanium oxide mixes, grinding 5 hours, is 6MPa compression moulding with pressure, and in air sintering, sintering temperature is 860 ℃, temperature rise rate is 500 ℃/h, and soaking time is 1h, obtains the strontium lead titanate target after dropping to normal temperature.Adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, substrate temperature is 650 ℃.Can generate the strontium lead titanate film of extension under this example condition, it is 10kHz in external electric field, and the dielectric adjustable of impressed voltage during for-20v～20v seen accompanying drawing 6 (b), and as seen from the figure, the dielectric adjustable of strontium lead titanate film is 40%.
Claims (4)
1. extension strontium lead titanate film with lithium nickelate buffer layer, it is characterized in that: deposition one deck buffer layer conductive electrode LNO film (2) on the one side of MgO substrate (1) deposits one deck uhligite phase PST film (3) again on buffer layer conductive electrode LNO film (2).
2. a kind of extension strontium lead titanate film according to claim 1 with lithium nickelate buffer layer, it is characterized in that: described strontium lead titanate film transmitance is 30%～60%, specific conductivity is 2 * 10
-3～3 * 10
-3Ω m.
3. preparation method with extension strontium lead titanate film of lithium nickelate buffer layer is characterized in that the step of this method is as follows:
1) be raw material with Quilonum Retard and nickel oxide, by the quality percentage composition 10%～20% Quilonum Retard with after 80%～90% nickel oxide mixes, ground 3～5 hours, with pressure is 2～10MPa compression moulding, and in air sintering, sintering temperature is 800～900 ℃, temperature rise rate is 100～600 ℃/h, insulation 1～3h obtains the lithium nickelate target after dropping to normal temperature;
2) be raw material with lead carbonate, Strontium carbonate powder and titanium oxide, by the quality percentage composition is after 20%～30% lead carbonate, 15%～25% Strontium carbonate powder and 45%～65% titanium oxide mix, ground 3～5 hours, with pressure is 2～10MPa compression moulding, and in air sintering, sintering temperature is 800～900 ℃, temperature rise rate is 100～600 ℃/h, insulation 1～3h obtains the strontium lead titanate target after dropping to normal temperature;
4) adopt the lithium nickelate target that has prepared, utilize pulsed laser deposition, deposition lithium nickelate film on (001) MgO substrate, the substrate temperature scope is 500～600 ℃;
5) adopt the strontium lead titanate target prepared, utilize pulsed laser deposition, cover and (001) MgO substrate of lithium nickelate buffer layer on deposit strontium lead titanate film, the substrate temperature scope is 700～800 ℃.
4. a kind of preparation method according to claim 3 with extension strontium lead titanate film of lithium nickelate buffer layer, it is characterized in that: described strontium lead titanate film has good epitaxial nature, between-20v～20v extra electric field, dielectric adjustable is between 40% to 70%.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181833A (en) * | 2011-06-10 | 2011-09-14 | 电子科技大学 | Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate |
| CN102514260A (en) * | 2011-12-03 | 2012-06-27 | 三峡大学 | Sol-gel preparation method of strontium titanate lead thin film |
| CN102888586A (en) * | 2012-11-02 | 2013-01-23 | 中国科学院上海硅酸盐研究所 | Lead strontium titanate thin film and production method thereof |
| CN102976746A (en) * | 2012-12-11 | 2013-03-20 | 东南大学 | Preparation method of ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film |
| CN105742164A (en) * | 2016-04-12 | 2016-07-06 | 常州工学院 | Preparation method of ordered Sr/Si interface structure |
| CN110581217A (en) * | 2019-09-06 | 2019-12-17 | 河北师范大学 | Method for preparing double-layer perovskite manganese oxide film on monocrystalline silicon substrate by epitaxial growth |
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2007
- 2007-04-30 CN CNB2007100684487A patent/CN100526522C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102181833A (en) * | 2011-06-10 | 2011-09-14 | 电子科技大学 | Method for epitaxially growing strontium titanate (STO) thin film on gallium arsenide (GaAs) substrate |
| CN102514260A (en) * | 2011-12-03 | 2012-06-27 | 三峡大学 | Sol-gel preparation method of strontium titanate lead thin film |
| CN102888586A (en) * | 2012-11-02 | 2013-01-23 | 中国科学院上海硅酸盐研究所 | Lead strontium titanate thin film and production method thereof |
| CN102976746A (en) * | 2012-12-11 | 2013-03-20 | 东南大学 | Preparation method of ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film |
| CN102976746B (en) * | 2012-12-11 | 2014-09-10 | 东南大学 | Preparation method of ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film |
| CN105742164A (en) * | 2016-04-12 | 2016-07-06 | 常州工学院 | Preparation method of ordered Sr/Si interface structure |
| CN110581217A (en) * | 2019-09-06 | 2019-12-17 | 河北师范大学 | Method for preparing double-layer perovskite manganese oxide film on monocrystalline silicon substrate by epitaxial growth |
| CN110581217B (en) * | 2019-09-06 | 2023-04-18 | 河北师范大学 | Method for preparing double-layer perovskite manganese oxide film on monocrystalline silicon substrate by epitaxial growth |
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