CN105720133B - Manufacturing technology of high-conductivity and high-voltage solar photoelectric glass board - Google Patents
Manufacturing technology of high-conductivity and high-voltage solar photoelectric glass board Download PDFInfo
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- CN105720133B CN105720133B CN201610077620.4A CN201610077620A CN105720133B CN 105720133 B CN105720133 B CN 105720133B CN 201610077620 A CN201610077620 A CN 201610077620A CN 105720133 B CN105720133 B CN 105720133B
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- 239000011521 glass Substances 0.000 title claims abstract description 144
- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000007639 printing Methods 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 26
- 239000002002 slurry Substances 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 239000006071 cream Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000005496 tempering Methods 0.000 claims description 8
- 239000002923 metal particle Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 230000001680 brushing effect Effects 0.000 claims description 3
- JBSLOWBPDRZSMB-FPLPWBNLSA-N dibutyl (z)-but-2-enedioate Chemical compound CCCCOC(=O)\C=C/C(=O)OCCCC JBSLOWBPDRZSMB-FPLPWBNLSA-N 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007651 thermal printing Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000003466 welding Methods 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 2
- 230000004927 fusion Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000013528 metallic particle Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention provides a manufacturing technology of a high-conductivity and high-voltage solar photoelectric glass board. The technology comprises the following steps: firstly, printing conductive paste; forming a glass board with a circuit layer through sintering, fusing and secondary covering to prepare a high-conductivity transparent glass-based circuit board; and finally welding a solar wafer by a reflow soldering technology. The high-conductivity transparent glass-based circuit board prepared by the middle step is high in light transmittance and high in conductivity; a complete circuit comprising the solar wafer and a conducting circuit can efficiently run; the solar wafer is not easily peeled off after being welded; and the finally prepared high-conductivity and high-voltage solar photoelectric glass board also has high light transmittance and can be applied to the scenes, such as an agricultural greenhouse ceiling, of requiring large-area light transmission.
Description
Technical field
The present invention relates to a kind of high conducting high voltage solar photoelectric glass plate manufacture craft, belongs to electronic device and makes neck
Domain.
Background technology
Electronic industry is maked rapid progress as national pillar industry, development in recent years, particularly with light, thin, short, little to send out
The end product of exhibition trend, to its basic industry --- printed wiring board industry, it is proposed that high density, small size, high conductivity
Etc. requirements at the higher level.Wiring board techniques develop under this background growth rapidly, and the industry in each light current field, such as computer and week
Side accessory system, medicine equipment, mobile phone, number (taking the photograph) camera, Communication Equipment, precision instrument, Aero-Space etc., all to track
The technique and quality of road plate proposes many concrete and clear and definite technical specification.
Traditional solar photoelectric glass is prepared often through following technique：Electricity is made first in solar wafer
Pole, both positive and negative polarity may be located at the same face of solar wafer, it is also possible to positioned at the positive and negative of solar wafer, the general tradition sun
The electroded solar wafer that energy photoelectric glass is used, its electrode is located at the same face.Because solar wafer is crystalline silicon, this
Body very thin and fragile, needs to be welded on pressure-bearing effect by one group of copper bar using the electroded solar wafer of butt-joint technique
The base plate with electronic circuit on, finally solar module is installed on face glass using laminating technology, glass
Panel primarily serves isolation and the effect protected.
Because solar photoelectric glass needs that the electric current that bears is big, voltage is strong, then need conductive capability very strong, but this
The solar photoelectric glass that traditional handicraft is made is planted, because itself base plate on-state rate with electronic circuit is limited, is led
Cause the on-state rate of whole solar photoelectric glass plate very limited.Meanwhile, butt-joint technique causes interconnectivity between circuit very strong,
Glass is only simultaneously coated with, solar wafer assembles pressure-bearing on glass, during high-power high-voltage use, once the sun
Energy photoelectric glass plate is broken or circuit goes wrong, it is easy to causes short circuit, there is very big potential safety hazard, it is difficult to pacified by 3C
Rule certification, and butt-welding machine is expensive, and efficiency is low.Additionally, traditional solar photoelectric glass plate is opaque, it is suitable for
Occasion is very limited.
The content of the invention
In order to solve the deficiencies in the prior art, the invention provides a kind of high conducting high voltage solar photoelectric glass plate system
Make technique, making for high conducting clear glass base circuit board can be realized, then the solar wafer that electrode is located at into two sides is direct
It is welded on high conducting clear glass base circuit board and makes high conducting high voltage solar photoelectric glass plate, made high conducting
High voltage solar photoelectric glass plate can realize large-area glass circuit production and realize that standard photovoltaic module dimension glass is complete
Circuit is made, and can bear high-tension high-power and use.
The present invention is for the solution technical scheme that adopted of its technical problem：There is provided a kind of high conducting high voltage solar energy
Photoelectric glass plate manufacture craft, comprises the following steps：
(1) high conducting clear glass base circuit board is made by procedure below：
A () electrocondution slurry is printed on the air surface of glass plate；The electrocondution slurry is 65～75 by mass ratio：3：5～
10：10～20：1～3 conducting powder, cryogenic glass powder, ethyl cellulose, terpinol and dibutyl maleate composition,
Wherein conducting powder is the mixture of Graphene powder or metal powder and Graphene powder；If conducting powder is metal powder and Graphene powder
Mixture, then the mass percent that Graphene powder accounts for electrocondution slurry is 2 ‰～5%；
B () will be covered with the glass plate of electrocondution slurry and toast 100～200 seconds at a temperature of 120～150 DEG C；
C () is placed in glass plate 300～360 seconds in 550～600 DEG C of temperature environments, be subsequently placed in 710～730 DEG C of temperature
Maintain 120～220 seconds in environment, be finally cooled to normal temperature, then now electrocondution slurry forms conducting wire and is distributed in glass plate
Surface and with glass plate melting, conducting wire becomes a part for glass plate, obtains high conducting clear glass base circuit board；
(2) two pieces high conducting clear glass base circuit boards are taken, along the conductor wire of two pieces high conducting clear glass base circuit boards
Road part scratches low temperature tin cream；
(3) electroded solar wafer is taken, the positive pole and negative pole of the electroded solar wafer are located at respectively too
The obverse and reverse of positive energy chip；Solar wafer is sandwiched between two pieces high conducting clear glass base circuit boards, solar energy is made
The positive pole of chip it is high with one piece conducting clear glass and circuit board on low temperature tin cream contact, while the negative pole of solar wafer and
Low temperature tin cream contact on another piece high conducting clear glass and circuit board；
(4) conductive trace portion is heated using solder reflow techniques, melts low temperature tin cream；
(5) by the edge seal of two pieces high conducting clear glass base circuit boards.
Mixed metal particles described in step (a) are cube or irregular polyhedronses.
Metal powder described in step (a) is one or more mixed metal particles in gold, silver and copper, grain graininess
More than 300 mesh.
The air surface that electrocondution slurry is printed on glass plate described in step (a), is printed using bat printing technology, embossing plate is printed
One kind in brush technology, screen printing technique, Thermal-printing Technology and dispensing formula map brushing technology.
It is different for the glass plate process time of different-thickness in step (c)：If sheet thickness is 5mm, by glass
Plate is placed in 360 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730 DEG C of temperature environments and is maintained 120 seconds；If glass
Plate thickness is 6mm, then glass plate is placed in 340 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730 DEG C of temperature rings
Maintain 140 seconds in border；If sheet thickness is 8mm, 320 seconds in 550～600 DEG C of temperature environments, then glass plate is placed in
It is placed in 710～730 DEG C of temperature environments and maintains 180 seconds；If sheet thickness is 10mm, glass plate is placed in into 550～600 DEG C
300 seconds in temperature environment, it is subsequently placed in 710～730 DEG C of temperature environments and maintains 220 seconds.
Cooled down to carry out tempering to glass plate with the speed that normal temperature is cooled in 30s in step (c).
In step (4), conductive trace portion is heated using special reflow machine, the heat of the special reflow machine blowout
Wind only heats conductive trace portion.
In step (5), using fluid sealant by two pieces high conducting clear glass base circuit board edge seal.
The present invention is had advantageous effect in that based on its technical scheme：
(1) electrocondution slurry of the invention is through special proportioning, wherein conducting metal can be included, it is also possible to only by graphite
Alkene powder is conductive, and with glass plate in the baking of step (b) and the melting process of step (c), glass is at 500 DEG C for electrocondution slurry
Start to soften, glass surface molecule has started to be in active state when 550 DEG C, now the terpinol and maleic in electrocondution slurry
Adipate all volatilizees at high temperature, and cryogenic glass powder has melted and has been in active state with conducting powder and glass surface
Glass molecule fused --- then glass molecule is also inactive less than 550 DEG C for temperature during this, if higher than if 600 DEG C
Glass plate easily bursts --- 720 DEG C or so high-temperature fusions are entered after the fusion of five or six minutes or so, now conducting powder molecule
Also begin to enliven, and deep fusion carried out with more active glass molecule, this process needs to complete for 2 to 4 minutes --- this single order
In section temperature not preferably less than 710 DEG C or higher than 730 DEG C preventing final glass deformation excessive --- now glass surface with lead
The molecule of electric powder is fully fused and is integrally formed, and this fusion is molecular level, with traditional handicraft using adhesive compared with have
Higher adhesion, and glass surface can become an entirety with circuit layer surface, make whole glass base circuit board smooth,
Suitable for various application occasions；
(2) if containing metallic particles in the electrocondution slurry of the present invention, metallic particles can process polishing for it is spherical, cube
Body or irregular polyhedronses, wherein being processed as particle marshalling after cube, are particularly advantageous in electric conductivity；When in electrocondution slurry
During containing metallic particles, although Graphene content is few, the mass percent for only accounting for electrocondution slurry is 2 ‰～5%, its molecule row
Row are extremely fine and close, and light weight can float on metallic molecule surface, because it is than abrasion-resistant metal and conductance is high, therefore most end form
Into conducting wire still ensure that its high on-state rate；Graphene is almost fully transparent, and its light transmittance can reach 97.7%, institute
High transmission rate can guarantee that with the glass base circuit board made；When conducting powder is only Graphene powder, on-state rate and light transmittance
It is higher；
(3) component and proportion design of electrocondution slurry of the present invention, step (b) sintering temperature and time design and
Whether step (3) fusion temperature and the design of time, carry out the later stage tempering and take into account, by tempering and conductive paste to glass
Smelting process unite two into one, regardless of whether carry out tempering to glass, above-mentioned design can make the high conducting being made saturating
Bright glass base circuit board has high conduction performance, the high grade of transparency, high-bond；
(4) present invention can carry out toughening process after step (c) alloying process, and rapidly cooling can make glass to glass
Tempering, quick cooling makes the conducting powder being merged produce negative tension force with glass molecule and combine more firmly, the mistake of tempering
Journey ruptures can the glass of hidden defect, make the glass of high-quality intact, the quality of finished product is improved, while allowing glass base circuit board more to tie
It is real；
(5) high conducting clear glass base circuit board light transmittance made by step (1) of the present invention is more than 90%, with superconducting
Ability, conducting impedance is less than 5 × 10-8Ω, enables the complete circuit Efficient Operation of solar wafer and conducting wire composition；Together
When, made by high conducting clear glass base circuit board combine without medium, circuit layer is led with good in high-power applications
Heat energy power, and circuit layer and the fusion of glass plate molecule in close, carry out being difficult to peel off after solar wafer welding；
(6) present invention has given up completely butt-joint technique, directly by solar wafer and conductor wire by the way of Reflow Soldering
Road connects, and substantially reduces cost, and improves process efficiency；
(7) because the conducting wire of the present invention is melted on glass substrate completely, if high conducting high voltage solar photoelectric
Glass plate is crushed, and whole circuit is then turned off, and glass is in itself nonconducting, will not re-form voltage, can be by peace
Rule, are adapted to high-tension high-power scene and use, it is only necessary to be directly output to high voltage power network by direct current is converted to into exchange；And
Traditional solar photoelectric glass plate not easily passs through safety, and low-voltage can only be allowed to use, if must connect with high voltage power network, needs
It is High Level AC Voltage by low voltage transition；
(8) because solar wafer is welded in the high conducting clear glass base circuit board of high transmission rate by solder reflow techniques
On, after the fusing of low temperature tin cream solar wafer can with conducting wire conducting, by designing solar wafer and conducting wire
Layout, for example, reduce the area of solar wafer, and by the sparse arrangement of solar wafer, then finally obtained height turns on high voltage too
Positive energy photoelectric glass plate also has high transmission rate, and can be applied to agricultural greenhouse ceiling etc. needs the scene of large area printing opacity to make
With range of application is wider compared with traditional solar photoelectric glass plate.
Specific embodiment
With reference to embodiment, the invention will be further described.
The invention provides a kind of high conducting high voltage solar photoelectric glass plate manufacture craft, comprises the following steps：
(1) high conducting clear glass base circuit board is made by procedure below：
A () electrocondution slurry is printed on the air surface of glass plate；The electrocondution slurry is 65～75 by mass ratio：3：5～
10：10～20：1～3 conducting powder, cryogenic glass powder, ethyl cellulose, terpinol and dibutyl maleate composition,
Wherein conducting powder is the mixture of Graphene powder or metal powder and Graphene powder；If conducting powder is metal powder and Graphene powder
Mixture, then the mass percent that Graphene powder accounts for electrocondution slurry is 2 ‰～5%；
B () will be covered with the glass plate of electrocondution slurry and toast 100～200 seconds at a temperature of 120～150 DEG C；
C () is placed in glass plate 300～360 seconds in 550～600 DEG C of temperature environments, be subsequently placed in 710～730 DEG C of temperature
Maintain 120～220 seconds in environment, be finally cooled to normal temperature, then now electrocondution slurry forms conducting wire and is distributed in glass plate
Surface and with glass plate melting, conducting wire becomes a part for glass plate, obtains high conducting clear glass base circuit board；
(2) two pieces high conducting clear glass base circuit boards are taken, along the conductor wire of two pieces high conducting clear glass base circuit boards
Road part scratches low temperature tin cream；
(3) electroded solar wafer is taken, the positive pole and negative pole of the electroded solar wafer are located at respectively too
The obverse and reverse of positive energy chip；Solar wafer is sandwiched between two pieces high conducting clear glass base circuit boards, solar energy is made
The positive pole of chip it is high with one piece conducting clear glass and circuit board on low temperature tin cream contact, while the negative pole of solar wafer and
Low temperature tin cream contact on another piece high conducting clear glass and circuit board；
(4) conductive trace portion is heated using solder reflow techniques, melts low temperature tin cream；
(5) by the edge seal of two pieces high conducting clear glass base circuit boards.
Mixed metal particles described in step (a) are cube or irregular polyhedronses.
Metal powder described in step (a) is one or more mixed metal particles in gold, silver and copper, grain graininess
More than 300 mesh.
The air surface that electrocondution slurry is printed on glass plate described in step (a), is printed using bat printing technology, embossing plate is printed
One kind in brush technology, screen printing technique, Thermal-printing Technology and dispensing formula map brushing technology.
It is different for the glass plate process time of different-thickness in step (c)：If sheet thickness is 5mm, by glass
Plate is placed in 360 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730 DEG C of temperature environments and is maintained 120 seconds；If glass
Plate thickness is 6mm, then glass plate is placed in 340 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730 DEG C of temperature rings
Maintain 140 seconds in border；If sheet thickness is 8mm, 320 seconds in 550～600 DEG C of temperature environments, then glass plate is placed in
It is placed in 710～730 DEG C of temperature environments and maintains 180 seconds；If sheet thickness is 10mm, glass plate is placed in into 550～600 DEG C
300 seconds in temperature environment, it is subsequently placed in 710～730 DEG C of temperature environments and maintains 220 seconds.
Cooled down to carry out tempering to glass plate with the speed that normal temperature is cooled in 30s in step (c).
In step (4), conductive trace portion is heated using special reflow machine, the heat of the special reflow machine blowout
Wind only heats conductive trace portion.
In step (5), using fluid sealant by two pieces high conducting clear glass base circuit board edge seal.
Height made by step (1) of the present invention turns on clear glass base circuit board light transmittance more than 90%, with superconductive power
Power, conducting impedance is less than 5 × 10-8Ω, enables the complete circuit Efficient Operation of solar wafer and conducting wire composition；Together
When, made by high conducting clear glass base circuit board conducting wire and glass plate combine without medium, make circuit layer high-power
Using when with the good capacity of heat transmission, and circuit layer is fused with glass plate molecule in close, after carrying out solar wafer welding
It is difficult to peel off；Directly solar wafer is connected with conducting wire by the way of Reflow Soldering, substantially reduces cost, and improved
Process efficiency；Can be adapted to high-tension high-power scene and use by safety；Agricultural greenhouse ceiling etc. can also be applied to be needed
The scene for wanting large area printing opacity is used, and range of application is wider compared with traditional solar photoelectric glass plate.
Claims (8)
1. a kind of height turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that comprise the following steps：
(1) high conducting clear glass base circuit board is made by procedure below：
A () electrocondution slurry is printed on the air surface of glass plate；The electrocondution slurry is 65～75 by mass ratio：3：5～10：10
～20：1～3 conducting powder, cryogenic glass powder, ethyl cellulose, terpinol and dibutyl maleate composition, wherein leading
Electric powder is the mixture of Graphene powder or metal powder and Graphene powder；If conducting powder is the mixing of metal powder and Graphene powder
Thing, then the mass percent that Graphene powder accounts for electrocondution slurry is 2 ‰～5%；
B () will be covered with the glass plate of electrocondution slurry and toast 100～200 seconds at a temperature of 120～150 DEG C；
C () is placed in glass plate 300～360 seconds in 550～600 DEG C of temperature environments, be subsequently placed in 710～730 DEG C of temperature environments
It is middle to maintain 120～220 seconds, be finally cooled to normal temperature, then now electrocondution slurry forms the surface that conducting wire is distributed in glass plate
And melt with glass plate, conducting wire becomes a part for glass plate, obtains high conducting clear glass base circuit board；
(2) two pieces high conducting clear glass base circuit boards are taken, along the conducting wire portion of two pieces high conducting clear glass base circuit boards
Divide blade coating low temperature tin cream；
(3) electroded solar wafer is taken, the positive pole and negative pole of the electroded solar wafer are located at respectively solar energy
The obverse and reverse of chip；Solar wafer is sandwiched between two pieces high conducting clear glass base circuit boards, solar wafer is made
Positive pole it is high with one piece conducting clear glass and circuit board on low temperature tin cream contact, while the negative pole of solar wafer with it is another
Low temperature tin cream contact on the high conducting clear glass of block and circuit board；
(4) conductive trace portion is heated using solder reflow techniques, melts low temperature tin cream；
(5) by the edge seal of two pieces high conducting clear glass base circuit boards.
2. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
A the metal powder described in () is one or more mixed metal particles in gold, silver and copper, grain graininess is more than 300 mesh.
3. height according to claim 2 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
A the mixed metal particles described in () are cube or irregular polyhedronses.
4. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
The air surface that electrocondution slurry is printed on glass plate described in (a), using printing bat printing technology, embossing plate printing technology, silk screen
One kind in printing technology, Thermal-printing Technology and dispensing formula map brushing technology.
5. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
It is different for the glass plate process time of different-thickness in (c)：If sheet thickness is 5mm, glass plate is placed in into 550～
360 seconds in 600 DEG C of temperature environments, it is subsequently placed in 710～730 DEG C of temperature environments and maintains 120 seconds；If sheet thickness is 6mm,
Then glass plate is placed in 340 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730 DEG C of temperature environments and is maintained 140
Second；If sheet thickness is 8mm, glass plate is placed in 320 seconds in 550～600 DEG C of temperature environments, is subsequently placed in 710～730
Maintain 180 seconds in DEG C temperature environment；If sheet thickness is 10mm, glass plate is placed in 550～600 DEG C of temperature environments
300 seconds, it is subsequently placed in 710～730 DEG C of temperature environments and maintains 220 seconds.
6. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
Cooled down to carry out tempering to glass plate with the speed that normal temperature is cooled in 30s in (c).
7. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
(4) in, conductive trace portion is heated using special reflow machine, the hot blast of the special reflow machine blowout only adds thermal conducting
Circuit pack.
8. height according to claim 1 turns on high voltage solar photoelectric glass plate manufacture craft, it is characterised in that：Step
(5) in, using fluid sealant by two pieces high conducting clear glass base circuit board edge seal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610077620.4A CN105720133B (en) | 2016-02-03 | 2016-02-03 | Manufacturing technology of high-conductivity and high-voltage solar photoelectric glass board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| WO2013025380A1 (en) * | 2011-08-15 | 2013-02-21 | Newdelman Mitchell Jay | Evacuated solar thermal electric generator |
| CN104751938A (en) * | 2013-12-31 | 2015-07-01 | 比亚迪股份有限公司 | Conductive paste for solar battery |
| CN204794893U (en) * | 2015-06-18 | 2015-11-18 | 贺学林 | Solar energy photovoltaic assembly |
| CN105122379A (en) * | 2012-12-28 | 2015-12-02 | 赫劳斯德国有限两和公司 | An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in mwt solar cells |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013025380A1 (en) * | 2011-08-15 | 2013-02-21 | Newdelman Mitchell Jay | Evacuated solar thermal electric generator |
| CN105122379A (en) * | 2012-12-28 | 2015-12-02 | 赫劳斯德国有限两和公司 | An electro-conductive paste comprising coarse inorganic oxide particles in the preparation of electrodes in mwt solar cells |
| CN104751938A (en) * | 2013-12-31 | 2015-07-01 | 比亚迪股份有限公司 | Conductive paste for solar battery |
| CN204794893U (en) * | 2015-06-18 | 2015-11-18 | 贺学林 | Solar energy photovoltaic assembly |
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