CN105714290A - 一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法 - Google Patents

一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法 Download PDF

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CN105714290A
CN105714290A CN201610077639.9A CN201610077639A CN105714290A CN 105714290 A CN105714290 A CN 105714290A CN 201610077639 A CN201610077639 A CN 201610077639A CN 105714290 A CN105714290 A CN 105714290A
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王莉丽
王秀锋
刘派
伍媛婷
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Shaanxi University of Science and Technology
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer

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Abstract

本发明一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，属于光子晶体结构色制备技术领域。取粒径为310±10nm SiO2微球，配制浓度1?3wt％的SiO2胶体溶液，超声分散2?4h，将清洗过的基片垂直固定在SiO2胶体溶液中，40?65℃干燥24?30h；采用蒸镀仪在组装好的SiO2胶体晶体膜表面镀厚度为5?10nm的碳膜，采用真空离子溅射法在碳膜表面再镀一层厚度为5?10nm的铂金膜；碳膜提供了光吸收背景，使其在光子禁带的反射率增强，对禁带以外波长的反射率降低，吸收了杂散光，铂金膜使其在光子禁带的反射强度进一步增强；宏观上呈色表现出低角度依赖性，色饱和度显著提高，呈现绚丽的单一蓝色。

Description

一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法
技术领域
本发明属于光子晶体结构色制备技术领域，特别涉及一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法。
背景技术
SiO2胶体晶体的一个典型用途是在结构色方面的应用。SiO2胶体晶体结构色因具有高亮度、永不褪色、虹彩现象、持久性和环境友好性而日益受到国内外学者的广泛关注。SiO2胶体晶体以其制备工艺简单，不需要特殊的设备，制备过程不会造成任何环境污染等在结构色应用方面具有潜在的优势。目前，SiO2胶体晶体的制备方法主要有电子微加工法、激光全息法和胶体自组装法等。物理制备方法一般较为复杂、费时、成本高，又需要多个步骤才能完成。相比之下，胶体自组装法是一种简单、快速和廉价的化学制备方法。然而，胶体自组装法制备的SiO2胶体晶体结构不可避免的会引入一些随机的缺陷，比如堆垛层错、粒子的缺失、取向的不可控制和位错等，这些随机缺陷会降低禁带的反射率，散射禁带以外波长的光。
目前，人工合成的SiO2胶体晶体膜通常呈色微弱，在特定的角度反射出彩虹色，有一定的角度依赖性，也就是说SiO2胶体晶体膜的颜色会随观察者入射光角度的变化而呈现不同的颜色。在自然光的条件下，只有有经验的人在特定的角度才可以察觉到颜色，而且颜色不够绚丽，色饱和度低，因而限制了它的应用。如何降低SiO2胶体晶体膜呈色的角度依赖性，获得明确的、呈色明亮的、单一颜色SiO2胶体晶体膜，而不是彩虹色，成为今后的一个研究热门。
发明内容
为了克服上述现有技术的缺点，本发明的目的在于提供一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，以解决目前SiO2胶体晶体膜呈现微弱彩虹色，色饱和度低，呈色具有角度依赖性，不能获得明确的、呈现绚丽的单一蓝色的问题。
为了实现上述目的，本发明采用的技术方案是：
一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，包括如下步骤：
(1)取平均粒径为310±10nm的SiO2微球，放入乙醇中搅拌均匀，配制浓度为1-3wt％的SiO2胶体溶液，超声分散2-4h；
(2)用去离子水清洗基片，然后分别在去离子水和乙醇中超声清洗30-90min后烘干备用，将清洗过的基片垂直固定在已超声分散的SiO2胶体溶液中，移入干燥箱中，干燥时间为24-30h，干燥温度为40-65℃，得到组装好的SiO2胶体晶体膜；
(3)将从干燥箱中取出的SiO2胶体晶体膜放入蒸镀仪中镀碳膜，使SiO2胶体晶体膜表面的碳膜厚度为5-10nm；
(4)将已经镀过碳膜的SiO2胶体晶体膜取出，改变靶材为铂金，采用真空离子溅射法在其表面再镀一层厚度为5-10nm的铂金膜，即得低角度依赖高饱和度蓝色SiO2胶体晶体膜。
所述基片为玻璃基片、金属基片、有机基片以及纺织织物等。
所述步骤(3)中，通过控制镀膜电流和碳丝的粗细实现对碳膜厚度的控制；所述步骤(4)中，通过控制镀膜电流和时间实现对铂金膜厚度的控制。例如，所述步骤(3)中，设置镀膜电流为60mA，所述步骤(4)中，设置镀膜电流为10mA，镀膜时间为50-100s。
与现有技术相比，本发明的有益效果是：
(1)本发明所得的蓝色SiO2胶体晶体膜微观上呈现高质量的密排六方结构。由于该胶体晶体表面喷涂了一层很薄的碳膜，提供了一种有助于增强该材料呈色饱和度的光吸收背景，使其在光子禁带的反射率增强，而对禁带以外波长的反射率降低，宏观上呈现明亮的单一蓝色(R:24 G:71 B 133；C:100％ M:60％ Y:0％ K:25％)，不再是彩虹色。
(2)本发明所得的蓝色SiO2胶体晶体膜在镀碳膜的基础上又镀了一层铂金膜，使其在降低禁带以外波长反射率的同时，禁带的反射率进一步增强，从而，色饱和度进一步提高。
(3)本发明所得的蓝色SiO2胶体晶体膜无论从那个角度观察都呈现单一的蓝色，呈色的角度依赖性显著降低。
(4)本发明所得的蓝色SiO2胶体晶体膜制备工艺简单，不需要特殊的设备，制备过程不会造成任何环境污染，是一种环境友好材料，有望取代传统色剂。
附图说明
图1是本发明组装后的蓝色SiO2胶体晶体膜微观形貌图。
图2是本发明组装后的蓝色SiO2胶体晶体膜微观形貌图。
具体实施方式
下面结合附图和实施例详细说明本发明的实施方式。
本发明一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，包括如下步骤：
(1)取少量单分散性、均一性良好的平均粒径为310±10nm的SiO2微球，放入一定量的乙醇中搅拌均匀，配制浓度为1-3wt％的SiO2胶体溶液，超声分散2-4h；
(2)用去离子水清洗基片，然后分别在去离子水和乙醇中超声清洗30-90min后烘干备用。将清洗过的基片垂直固定在已超声分散的SiO2胶体溶液中，将其移入干燥箱中，控制干燥时间为24-30h，干燥温度为40-65℃；
(3)将从干燥箱取出的已经组装好的SiO2胶体晶体膜放入蒸镀仪中镀碳膜，设置镀膜电流为60mA,通过控制碳丝的粗细来调整碳膜的厚度，使SiO2胶体晶体膜表面的碳膜厚度为5-10nm。
(4)将已经镀过碳膜的SiO2胶体晶体膜取出，改变靶材为铂金，采用真空离子溅射法镀铂金膜，设置镀膜电流为10mA，镀膜时间为50-100s，在碳膜表面再镀一层厚度为5-10nm的铂金膜。即可改善SiO2胶体晶体膜角度依赖性和饱和度，使其呈现明亮的单一蓝色，不随观察者入射光角度的改变而改变。
本发明得到的低角度依赖高饱和度蓝色SiO2胶体晶体膜如图1和2所示，可见其微观上呈现高质量的密排六方结构，宏观上呈色表现出低角度依赖性，色饱和度显著提高，呈现绚丽的单一蓝色，不再是彩虹色。

Claims (4)

1.一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，其特征在于，包括如下步骤：
(1)取平均粒径为310±10nm的SiO2微球，放入乙醇中搅拌均匀，配制浓度为1-3wt％的SiO2胶体溶液，超声分散2-4h；
(2)用去离子水清洗基片，然后分别在去离子水和乙醇中超声清洗30-90min后烘干备用，将清洗过的基片垂直固定在已超声分散的SiO2胶体溶液中，移入干燥箱中，干燥时间为24-30h，干燥温度为40-65℃，得到组装好的SiO2胶体晶体膜；
(3)将从干燥箱中取出的SiO2胶体晶体膜放入蒸镀仪中镀碳膜，使SiO2胶体晶体膜表面的碳膜厚度为5-10nm；
(4)将已经镀过碳膜的SiO2胶体晶体膜取出，改变靶材为铂金，采用真空离子溅射法在其表面再镀一层厚度为5-10nm的铂金膜，即可得到低角度依赖高饱和度蓝色SiO2胶体晶体膜。
2.根据权利要求1所述低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，其特征在于，所述基片为玻璃基片、金属基片、有机基片或纺织织物。
3.根据权利要求1所述低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，其特征在于，所述步骤(3)中，通过控制镀膜电流和碳丝粗细实现对碳膜厚度的控制；所述步骤(4)中，通过控制镀膜电流和时间实现对铂金膜厚度的控制。
4.根据权利要求1所述低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法，其特征在于，所述步骤(3)中，设置镀膜电流为60mA，所述步骤(4)中，设置镀膜电流为10mA，镀膜时间为50-100s。
CN201610077639.9A 2016-02-03 2016-02-03 一种低角度依赖高饱和度蓝色SiO2胶体晶体膜的制备方法 Pending CN105714290A (zh)

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