CN105702713A - Semiconductor structure - Google Patents
Semiconductor structure Download PDFInfo
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- CN105702713A CN105702713A CN201410705861.XA CN201410705861A CN105702713A CN 105702713 A CN105702713 A CN 105702713A CN 201410705861 A CN201410705861 A CN 201410705861A CN 105702713 A CN105702713 A CN 105702713A
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Abstract
The invention discloses a semiconductor structure. The semiconductor structure comprises a first doping area, a second doping area, a field oxidation layer, a grid electrode layer, and a metal layer, the first doping area comprises a first conductive type, the second doping area is formed in the first doping area and comprises a second conductive type relative to the first conductive type, the field oxidation layer is positioned on the first doping area, the grid electrode structure comprises a first grid portion and a second grid portion separating from each other, the second grid portion is positioned on the field oxidation layer, the second grid portion is electrically connected with a source electrode terminal, the metal layer is positioned on the grid electrode structure, and the metal layer comprises a first metal portion and a second metal portion separating from each other.
Description
Technical field
The invention relates to a kind of semiconductor structure, and in particular to a kind of semiconductor structure with stable threshold voltage。
Background technology
Between recent decades, semiconductor industry continues to reduce the size of semiconductor structure, and improves the unit cost of speed, usefulness, density and integrated circuit simultaneously。For the semiconductor element (such as metal-oxide semiconductor (MOS) MOS) that high pressure or supertension operate, when component size reduces, and MOS transistor is under operation with high pressure, it will usually the problem producing electrical property efficiency。
Therefore, research worker is all devoted to study how can produce stable high-voltage MOS transistor。
Summary of the invention
The invention relates to a kind of semiconductor structure。In embodiment, by the design of the grid structure in semiconductor structure so that semiconductor structure has stable threshold voltage (thresholdvoltage)。
According to one embodiment of the invention, it is propose a kind of semiconductor structure。Semiconductor structure includes one first doped region, one second doped region, a field oxide, a grid structure and a metal level。First doped region has one first conductivity type。Second doped region is formed in the first doped region, and has one second conductivity type relative to the first conductivity type。Field oxide is positioned on the first doped region。Grid structure includes a first grid part and a second grid part, separates each other, and wherein second grid part is positioned on field oxide, and second grid part is electrically connected to source-side。Metal level is positioned on grid structure, and metal level includes one first metal part and one second metal part, separates each other。
According to another embodiment of the present invention, it is propose a kind of semiconductor structure。Semiconductor structure includes a grid structure and a metal level。Grid structure includes a first grid part and a second grid part, separates each other, and wherein first grid part and second grid part have circulus, and first grid partially surrounds second grid part。Metal level is positioned on grid structure, and metal level includes one first metal part and one second metal part, separates each other, and wherein second grid part is to be electrically connected to source-side via the second metal part。
In order to the above-mentioned and other aspect of the present invention being had understanding more preferably, preferred embodiment cited below particularly, and coordinating institute's accompanying drawings, being described in detail below:
Accompanying drawing explanation
Figure 1A illustrates the top view of semiconductor structure according to an embodiment of the invention。
Figure 1B illustrates the local top view of the semiconductor structure of Figure 1A。
Fig. 1 C illustrates the semiconductor structure sectional view along hatching 1C-1C ' of Figure 1A。
The technique that Fig. 2～Fig. 4 illustrates the semiconductor structure according to present invention one embodiment。
Fig. 5 A is the I-V curve of the semiconductor structure according to present invention one comparative example。
Fig. 5 B is the I-V curve of the semiconductor structure according to present invention one embodiment。
[symbol description]
100: semiconductor structure
110: substrate
120: the first doped regions
130: the second doped regions
135: the three doped regions
140: grid structure
141: first grid part
143: second grid part
150: field oxide
160: metal level
161: the first metal parts
161a: the one C character form structure
161b: the two C character form structure
163: the second metal parts
163a: peripheral C character form structure
163b: inner annular structure
165: the three metal parts
167: the four metal parts
171: the first doped electrode districts
173: the second doped electrode districts
175: the three doped electrode districts
177: the four doped electrode districts
191a: top doped region
191b: doped layer
193: dielectric layer
1C-1C ': hatching
D1: the first distance
D2, D2 ': second distance
G: gate-voltage source
H: projection peak
I-1, I-2, I-1, II-2: curve
S: source terminal
W1: the first width
W2: the second width
Detailed description of the invention
In an embodiment of the present invention, it is propose a kind of semiconductor structure and manufacture method thereof。In embodiment, by the design of the grid structure in semiconductor structure so that semiconductor structure has stable threshold voltage (thresholdvoltage)。But, embodiment only in order to illustrate as example, can't the limit present invention be intended to protection scope。Additionally, the graphic element being omission part and wanting in embodiment, to clearly show that the technical characterstic of the present invention。
Refer to Figure 1A～Fig. 1 C, Figure 1A illustrates the top view of the semiconductor structure 100 according to present invention one embodiment, Figure 1B illustrates the local top view of the semiconductor structure 100 of Figure 1A, and Fig. 1 C illustrates the semiconductor structure 100 sectional view along hatching 1C-1C ' of Figure 1A。
As shown in Figure 1A～Fig. 1 C, semiconductor structure 100 includes one first doped region 120,1 second doped region 130, grid structure 140, field oxide 150 and a metal level 160。First doped region 120 has one first conductivity type。Second doped region 130 is formed in the first doped region 120, and has one second conductivity type relative to the first conductivity type。Field oxide 150 is positioned on the first doped region 120。Grid structure 140 includes first grid part 141 and a second grid part 143, first grid part 141 and second grid part 143 are separated each other, wherein second grid part 143 is positioned on field oxide 150, and second grid part 143 is electrically connected to source-side S。Metal level 160 includes one first metal part 161 and one second metal part 163, and the first metal part 161 and the second metal part 163 are separated each other。
In embodiment, design by the grid structure 140 in semiconductor structure 100, wherein the first grid part 141 of grid structure 140 and second grid part 143 are separated from one another, and the second grid part 143 being positioned on field oxide 150 is electrically connected to source terminal S, and make semiconductor structure 100 can have stable threshold voltage (thresholdvoltage)。
In embodiment, as shown in Figure 1A and Fig. 1 C, the second grid part 143 of grid structure 140 is to be electrically connected to source terminal S via the second metal part 163 of metal level 160。
In embodiment, as shown in Figure 1A～Fig. 1 C, the second metal part 163 of metal level 160 more includes an a peripheral C character form structure 163a and inner annular structure 163b, and peripheral C character form structure 163a and inner annular structure 163b is electrically connected to source terminal S jointly。As shown in Figure 1 C, the second grid part 143 of grid structure 140 is electrically connected to the inner annular structure 163b of the second metal part 163。In other words, the second grid part 143 of grid structure 140 is in fact the inner annular structure 163b of the second metal part 163 of direct contact metal layer 160, and is electrically connected to source terminal S。
In embodiment, as shown in Figure 1 C, the drift region of semiconductor structure 100 is positioned among the first doped region 120, and field oxide 150 is between second grid part 143 and the drift region of grid structure 140。
In embodiment, as shown in Figure 1A～Figure 1B, the first grid part 141 of grid structure 140 and second grid part 143 are respectively provided with circulus, and first grid part 141 is around second grid part 143。
In embodiment, as shown in Figure 1A and Fig. 1 C, the first grid part 141 of grid structure 140 is positioned on the second doped region 130, and first grid part 141 is electrically connected to a gate-voltage source G。
In embodiment, as shown in Figure 1A and Fig. 1 C, the first grid part 141 of grid structure 140 is to be electrically connected to gate-voltage source G via the first metal part 161 of metal level 160。
In embodiment, as shown in Figure 1A～Fig. 1 C, the first metal part 161 of metal level 160 more includes one the oneth C character form structure 161a。As shown in Figure 1 C, the first grid part 141 of grid structure 140 is electrically connected to a C character form structure 161a of the first metal part 161。In other words, the first grid part 141 of grid structure 140 is in fact a C character form structure 161a of the first metal part 161 of direct contact metal layer 160, and is electrically connected to gate-voltage source G。
In embodiment, design by the grid structure 140 in semiconductor structure 100, the second grid part 143 being particularly not only located on field oxide 150 is electrically connected to source terminal S, the first grid part 141 being positioned on the second doped region 130 is electrically connected to gate-voltage source G, that is, two parts separately of grid structure 140 are respectively connecting to source terminal S and gate-voltage source G, and then make semiconductor structure 100 can have stable threshold voltage。
Specifically, in semiconductor structure 100, the metallic circuit formed via single metal layer 160 reaches the effect being electrically connected, traditional grid structure but single metal layer is arranged in pairs or groups, easily cause the phenomenon that similar secondary turns on when applying grid voltage, and cause the rising of threshold voltage。According to embodiments of the invention, design by the grid structure 140 in semiconductor structure 100, two parts separately of grid structure 140 are respectively connecting to source terminal S and gate-voltage source G, be particularly at outside ring-type first grid part 141 be electrically connected to gate-voltage source G and be positioned at inner side ring-type second grid part 143 be electrically connected to source terminal S, therefore the generation that secondary turns on can be avoided, and then reduction threshold voltage, reach so that semiconductor structure 100 can have the effect of stable threshold voltage。
In embodiment, as shown in Figure 1A～Fig. 1 C, the first grid part 141 of grid structure 140 has one first width W1, and the second grid part 143 of grid structure 140 has one second width W2, and the first width W1 and the second width W2 can be identical or different。
In embodiment, as shown in Figure 1A～Fig. 1 C, a C character form structure 161a of the first metal part 161 is between the peripheral C character form structure 163a and inner annular structure 163b of the second metal part 163。
In embodiment, as shown in Figure 1A, the first metal part 161 of metal level 160 more includes one the 2nd C character form structure 161b, and the second metal part 163 is around the 2nd C character form structure 161b of the first metal part 161。
Specifically, as shown in Figure 1A, in embodiment, the inner annular structure 163b of the second metal part 163 is around the 2nd C character form structure 161b of the first metal part 161。
In embodiment, 2nd C character form structure 161b of the first metal part 161 is surrounded by the inner annular structure 163b of the second metal part 163, and the 2nd C character form structure 161b of the first metal part 161 is electrically connected to the first grid part 141 of grid structure 140 equally。Thus, oneth C character form structure 161a collocation the 2nd C character form structure 161b of the first metal part 161 configures substantially along first grid part 141 distributing position of grid structure 140, therefore when applying grid voltage, can all regions of substantially uniform conducting first grid part 141, thus the switching speed of semiconductor structure 100 device can be improved。
In embodiment, as shown in Figure 1 C, semiconductor structure 100 more can include one first doped electrode district of doped electrode district 171,1 second 173 and one the 3rd doped electrode district 175。First doped electrode district 171 is formed in the first doped region 120。Second doped electrode district 173 and the 3rd doped electrode district 175 are formed in the second doped region 130, and wherein the second doped electrode district 173 and the 3rd doped electrode district 175 are electrically connected to the second metal part 163 of metal level 160。
In embodiment, as shown in Figure 1A～Fig. 1 C, metal level 160 more includes one the 3rd metal part 165, and the 3rd metal part 165 and the first metal part 161 and the second metal part 163 are separated each other。As shown in Figure 1 C, the 3rd metal part 165 is electrically connected to the first doped electrode district 171。
In embodiment, as shown in Figure 1A～Fig. 1 C, it is separated by between first grid part 141 and the second grid part 143 of grid structure 140 one first distance D1, being separated by between first metal part 161 and the second metal part 163 of metal level 160 a second distance D2, the first distance D1 is such as greater than or equal to second distance D2。
In detail, the second distance being separated by between first metal part 161 and the second metal part 163 can be the second distance D2 between a C character form structure 161a and the inner annular structure 163b of the second metal part 163 of the first metal part 161, it is also possible to be the second distance D2 ' between a C character form structure 161a of the first metal part 161 and the peripheral C character form structure 163a of the second metal part 163。First distance D1 is such as greater than or equal to second distance D2 '。In embodiment, second distance D2 and second distance D2 ' can be identical or different。
As shown in Figure 1B～Fig. 1 C, semiconductor structure 100 more includes substrate 110, the 3rd doped region 135, top doped region 191a, a doped layer 191b and one a 4th doped electrode district 177。First doped region 120 and the 3rd doped region 135 are formed in substrate 110。4th doped electrode district 177 is formed in the 3rd doped region 135, and top doped region 191a is formed in the first doped region 120, and doped layer 191b is formed in the doped region 191a of top。
In embodiment, semiconductor structure 100 more includes dielectric layer 193, and metal level 160 more includes one the 4th metal part 167。Metal level 160 via the contact hole in dielectric layer 193 with dielectric layer 193 under element or doped region be electrically connected。4th metal part 167 is electrically connected to the 4th doped electrode district 177。
In embodiment, the first doped region 120 has the first conductivity type such as N-conductivity with doped layer 191b, and the first doped region 120 is such as high pressure N trap (HVNW), and doped layer 191b is such as N level doping (N-gradeimplant)。Substrate the 110, second doped region the 130, the 3rd doped region the 135, the 3rd doped electrode district of doped electrode district the 175, the 4th 177 has the second conductivity type such as P conductivity type relative to the first conductivity type with top doped region 191a, and substrate 110 is such as P type substrate or P type extension (P-epi)。
In one embodiment, semiconductor structure 100 is metal-oxide semiconductor (MOS) device。In this example, the first doped electrode district 171 and the second doped electrode district 173 have the first conductivity type such as N-conductivity。First doped electrode district 171 is used as drain electrode, and the second doped electrode district 173 is used as source electrode。
In another embodiment, semiconductor structure 100 is insulated gate bipolar transistor (IGBT) device。In this example, the first doped electrode district 171 has the second conductivity type such as P conductivity type, and the second doped electrode district 173 has the first conductivity type such as N-conductivity。First doped electrode district 171 is used as anode, and the second doped electrode district 173 is used as negative electrode。
The technique that Fig. 2～Fig. 4 illustrates the semiconductor structure 100 according to present invention one embodiment。
As shown in Figure 2, it is provided that silicon (SOI) on substrate 110 such as block silicon or insulator layer。Form the first doped region 120 in substrate 110。Form the second doped region 130 in the first doped region 120。Form the 3rd doped region 135 in substrate 110。In one embodiment, the first doped region 120 has the first conductivity type such as N-conductivity, and all has the second doped region 130 of the second conductivity type such as P conductivity type and the 3rd doped region 135 is to utilize same mask to concurrently form。Then, form top doped region 191a in the first doped region 120, form doped layer 191b in the doped region 191a of top。In embodiment, top doped region 191a and doped layer 191b is utilized respectively different mask to be formed。
As it is shown on figure 3, form field oxide 150 on doped layer 191b。Field oxide 150 more can be formed on the first doped region 120 and between the second doped region 130 and the 3rd doped region 135。Field oxide 150 is not limited to field oxide as shown in Figure 3, it is possible to include other suitable dielectric structures。
Then, as shown in Figure 4, grid structure 140 is formed on the first doped region 120 and the second doped region 130。In embodiment, grid structure 140 can include polysilicon and the metal silicide being formed on polysilicon such as tungsten silicide, and the clearance wall of grid structure 140 can include silicon dioxide such as tetraethoxysilane (Tetraethoxysilane；TEOS)。
In embodiment, the manufacture method of grid structure 140 such as comprises the following steps: form polysilicon and metal silicide layer, with mask etch process, polysilicon and metal silicide layer are patterned, to form separated first grid part 141 and second grid part 143, then, clearance wall is formed on sidewall。So far grid structure 140 as shown in Figure 4 is formed。In embodiment, the pattern of above-mentioned grid structure 140 is to complete in a mask etch process。
Then, refer to Figure 1A～Fig. 1 C, form the first doped electrode district 171 in the first doped region 120。Form the second doped electrode district 173 and the 3rd doped electrode district 175 in the second doped region 130。Form the 4th doped electrode district 177 in the 3rd doped region 135。In embodiment, the first doped electrode district 175 of the 171, second doped electrode district the 173, the 3rd of doped electrode district and the 4th doped electrode district 177 are heavily doped。
Then, refer to Figure 1A～Fig. 1 C figure, form dielectric layer 193 in substrate 110。Conductive metallic material is utilized to fill opening (contact hole) the pattern conductive metal material afterwards of dielectric layer 193, to form metal level 160。Metal level 160 includes such as tungsten, copper, aluminum etc.。
Fig. 5 A is the I-V curve of the semiconductor structure according to present invention one comparative example, and Fig. 5 B is the I-V curve of the semiconductor structure 100 according to present invention one embodiment。In embodiment, semiconductor structure 100 can be applicable to the device of high pressure, supertension (such as 300V～1000V), for instance MOS, IGBT and diode。
In Fig. 5 A, curve I-1 represents the once differentiation curve that the I-V curve of the semiconductor structure of the grid structure without embodiments of the invention, curve I-2 represent curve I-1。In Fig. 5 B, curve II-1 represents the once differentiation curve that the I-V curve of semiconductor structure 100, curve II-2 represent curve II-1。As shown in Figure 5A, in traditional semiconductor structure, when there is single metal layer but not there is the grid structure 140 such as previous embodiment, the once differentiation curve (curve I-2) of its I-V curve can produce a projection peak H because of the phenomenon of similar secondary conducting, and causes threshold voltage to be increased to the situation of about 1.73V。Comparatively speaking, as shown in Figure 5 B, according to embodiments of the invention, the once differentiation curve (curve II-2) of the I-V curve of semiconductor structure 100 does not have any projection peak, and its threshold voltage is approximately 0.9V。
In other words, according to embodiments of the invention, by the design of the grid structure 140 in semiconductor structure 100, it is possible to secondary conducting occurs when avoiding applying grid voltage, and then reduction threshold voltage, reach so that semiconductor structure 100 can have the effect of stable threshold voltage。
In sum, although the present invention is disclosed above with preferred embodiment, and so it is not limited to the present invention。Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations。Therefore, protection scope of the present invention is when depending on being as the criterion that appended claims scope defines。
Claims (17)
1. a semiconductor structure, including:
One first doped region, has one first conductivity type；
One second doped region, is formed in this first doped region, and has one second conductivity type relative to this first conductivity type；
One field oxide, is positioned on this first doped region；
One grid structure, including a first grid part and a second grid part, separates each other, and wherein this second grid part is positioned on this field oxide, and this second grid part is electrically connected to source-side；And
One metal level, is positioned on this grid structure, and this metal level includes one first metal part and one second metal part, separates each other。
2. semiconductor structure according to claim 1, wherein this second grid part is to be electrically connected to this source terminal via this second metal part。
3. semiconductor structure according to claim 1, wherein this first grid part is positioned on this second doped region, and this first grid part is electrically connected to a gate-voltage source。
4. semiconductor structure according to claim 3, wherein this first grid part is to be electrically connected to this gate-voltage source via this first metal part。
5. semiconductor structure according to claim 1, more includes a drift region, is positioned among this first doped region, and this field oxide is between this second grid part and this drift region。
6. semiconductor structure according to claim 1, more includes:
One first doped electrode district, is formed in this first doped region；And
One second doped electrode district and one the 3rd doped electrode district, be formed in this second doped region, and wherein this second doped electrode district and the 3rd doped electrode district are electrically connected to this second metal part。
7. semiconductor structure according to claim 6, wherein this metal level more includes one the 3rd metal part, 3rd metal part and this first metal part and this second metal part are separated each other, and wherein the 3rd metal part is electrically connected to this first doped electrode district。
8. semiconductor structure according to claim 1, wherein it is separated by between this first grid part and this second grid part one first distance, being separated by between this first metal part and this second metal part a second distance, this first distance is more than or equal to this second distance。
9. a semiconductor structure, including:
One grid structure, including a first grid part and a second grid part, separates each other, and wherein this first grid part and this second grid part have circulus, and this first grid partially surrounds this second grid part；And
One metal level, is positioned on this grid structure, and this metal level includes one first metal part and one second metal part, separates each other, and wherein this second grid part is to be electrically connected to source-side via this second metal part。
10. semiconductor structure according to claim 9, wherein this first grid part is to be electrically connected to a gate-voltage source via this first metal part。
11. semiconductor structure according to claim 9, wherein this first metal part includes one the oneth C character form structure。
12. semiconductor structure according to claim 11, wherein this second metal part includes peripheral C character form structure and an inner annular structure, and a C character form structure of this first metal part is between this periphery C character form structure and this inner annular structure。
13. semiconductor structure according to claim 9, wherein this second metal part includes peripheral C character form structure and an inner annular structure, wherein this periphery C character form structure and this inner annular structure are electrically connected to this source terminal jointly, and this second grid part is electrically connected to this inner annular structure。
14. semiconductor structure according to claim 9, wherein this first metal part includes one the 2nd C character form structure, and this second metal partially surrounds the 2nd C character form structure。
15. semiconductor structure according to claim 14, wherein this second metal part includes peripheral C character form structure and an inner annular structure, and this inner annular structure ring is around the 2nd C character form structure。
16. semiconductor structure according to claim 9, wherein this first grid part has one first width, and this second grid part has one second width, and this first width and this second width are identical or different。
17. semiconductor structure according to claim 9, wherein it is separated by between this first grid part and this second grid part one first distance, being separated by between this first metal part and this second metal part a second distance, this first distance is more than or equal to this second distance。
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| CN201410705861.XA CN105702713B (en) | 2014-11-28 | 2014-11-28 | Semiconductor structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117807A (en) * | 2010-01-05 | 2011-07-06 | 台湾积体电路制造股份有限公司 | High voltage devices and methods of forming the same |
| CN103296067A (en) * | 2012-02-24 | 2013-09-11 | 旺宏电子股份有限公司 | Semiconductor structure and forming method thereof |
| CN103887336A (en) * | 2012-12-19 | 2014-06-25 | 旺宏电子股份有限公司 | Semiconductor structure and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117807A (en) * | 2010-01-05 | 2011-07-06 | 台湾积体电路制造股份有限公司 | High voltage devices and methods of forming the same |
| CN103296067A (en) * | 2012-02-24 | 2013-09-11 | 旺宏电子股份有限公司 | Semiconductor structure and forming method thereof |
| CN103887336A (en) * | 2012-12-19 | 2014-06-25 | 旺宏电子股份有限公司 | Semiconductor structure and manufacturing method thereof |
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