CN105702549A - Device for manufacturing display device and method for manufacturing the same - Google Patents
Device for manufacturing display device and method for manufacturing the same Download PDFInfo
- Publication number
- CN105702549A CN105702549A CN201510733044.XA CN201510733044A CN105702549A CN 105702549 A CN105702549 A CN 105702549A CN 201510733044 A CN201510733044 A CN 201510733044A CN 105702549 A CN105702549 A CN 105702549A
- Authority
- CN
- China
- Prior art keywords
- pipe
- refrigerant
- supply pipe
- flowing
- cooler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a device for manufacturing a display device and a method for manufacturing the same. The device comprises a cavity, a supply tube which is constructed for supplying the cleaning gas, a plasma generator which is connected to the supply tube and is constructed to enable the cleaning gas to be ionized; the device also comprises a first refrigerator which is connected to the plasma generator and is used for cooling the cleaning gas discharged from the plasma generator; and the first refrigerator comprises an outer surface surrounding the supply tube and a first refrigerant runner pipe for the refrigerant to go through.
Description
This application claims in December in 2014 priority at the 10-2014-0177822 korean patent application of Korean Intellectual Property Office's submission on the 10th and rights and interests, the disclosure of this korean patent application is all incorporated herein by reference。
Technical field
The technology described relates in general to a kind of equipment for manufacturing display device and the method manufacturing this display device。
Background technology
Widely use portable electron device。Recently, except the compact electronic device of such as mobile phone, tablet PC has become widely used mobile computing machine。
In order to support various function, electronic apparatus includes the display unit of the visual information for providing a user with such as image or video。Recently, along with being used for driving the assembly of such display unit to become miniaturization, display unit proportion in device shape factor is gradually increased。Additionally, have been developed for bend to the structure with predetermined angular from smooth structure。
Summary of the invention
One invention aspect is for manufacturing the equipment of display device and the method manufacturing display device。
Being the equipment for manufacturing display device on the other hand, this equipment includes: chamber；Supply pipe, cleans gas from outside supply；Plasma generating unit, is connected to supply pipe and makes cleaning gas plasma；And first cooling unit, it is connected to plasma generating unit and cools down the cleaning gas discharged from plasma generating unit。Outer surface that first cooling unit includes being provided about supply pipe and make cold-producing medium through the first pipe for flowing of refrigerant of its flowing。
Cold-producing medium can include at least one selected from nitrogen, helium and carbon dioxide。
First cooling unit can also include: the first outer tube, is provided about the first pipe for flowing of refrigerant and has and the first separated inner surface of pipe for flowing of refrigerant。
Space between first outer tube and the first pipe for flowing of refrigerant may remain under vacuum state。
First cooling unit can also include the first heat insulation component being provided about the first outer tube。
First cooling unit can also include: first connects unit, is arranged on plasma and sends out between generating unit and supply pipe and seal supply pipe and the first pipe for flowing of refrigerant。
First connects unit can be formed by pottery。
Described equipment can also include: the second cooling unit, is arranged on cleaning in gas part in its stream to plasma generating unit of supply pipe。
Second cooling unit can include being provided about supply pipe and cold-producing medium second refrigerant runner pipe movable within。
Second cooling unit can also include being provided about second refrigerant runner pipe and keeping the second outer tube under vacuum conditions。
Being the equipment for manufacturing display device on the other hand, this equipment includes: chamber；Supply pipe, cleans gas from outside supply；Plasma generating unit, is connected to supply pipe and makes cleaning gas plasma；And second cooling unit, it is arranged on cleaning in gas part in its stream to plasma generating unit of supply pipe。Second cooling unit includes the second refrigerant runner pipe being provided about supply pipe and cold-producing medium through its flowing。
Second cooling unit can also include being provided about second refrigerant runner pipe and keeping the second outer tube under vacuum conditions。
Space between second refrigerant runner pipe and the second outer tube may remain under vacuum state。
Cold-producing medium can include at least one selected from nitrogen, helium and carbon dioxide。
Being the method manufacturing display device on the other hand, the method includes: form display unit in substrate；Process gas is fed to shower nozzle, makes process gas plasma in the showerhead, then the process gas of plasma is ejected on display unit, thus forming inorganic layer on the display unit；And substrate is taken out from chamber, plasma generating unit makes cleaning gas plasma, then the cleaning gas of plasma is fed to chamber。Before in cleaned gas stream to plasma generating unit or after flowing out plasma generating unit, cleaning gas is cooled down, or both all cleaning gas is being cooled down。
Clean gas to flow in supply pipe。Pipe for flowing of refrigerant can around supply pipe, it is possible to supply cold-producing medium between pipe for flowing of refrigerant and supply pipe, and the cleaning gas at supply Bottomhole pressure can be cooled down by cold-producing medium。
Institute's cold-producing medium can include at least one selected from nitrogen, helium and carbon dioxide。
Space between outer tube and pipe for flowing of refrigerant around pipe for flowing of refrigerant, and can be kept under vacuum conditions by outer tube。
Heat insulation component can be set in the outside of outer tube。
Being the equipment for manufacturing display device on the other hand, this equipment includes: chamber；Supply pipe, is configured to supply and cleans gas；Plasma generator, is connected to supply pipe and is configured to make cleaning gas plasma；And first cooler, it is connected to plasma generator and is configured to cool down the cleaning gas discharged from plasma generator, wherein, the first cooler includes around the outer surface of supply pipe and is configured to the first pipe for flowing of refrigerant making cold-producing medium pass through。
In superincumbent equipment, cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。In superincumbent equipment, the first cooler also includes the first outer tube around the first pipe for flowing of refrigerant, wherein, forms gap between inner surface and the outer surface of the first pipe for flowing of refrigerant of the first outer tube。In superincumbent equipment, gap keeps under vacuum conditions。In superincumbent equipment, the first cooler also includes the first heat insulation component around the first outer tube。In superincumbent equipment, the first cooler also includes: the first connector, between plasma generator and supply pipe and be configured to seal supply pipe and the first pipe for flowing of refrigerant。
In superincumbent equipment, the first connector is formed by pottery。Equipment above also includes: the second cooler, be arranged on supply pipe be configured to make cleaning gas be passed in the part in plasma generator。In superincumbent equipment, the second cooler includes around supply pipe and is configured to the second refrigerant runner pipe making cold-producing medium pass through。In superincumbent equipment, the second cooler also includes around second refrigerant runner pipe and keeps the second outer tube under vacuum conditions。
Being the equipment for manufacturing display device on the other hand, this equipment includes: chamber；Supply pipe, is configured to supply and cleans gas；Plasma generator, is connected to supply pipe and is configured to make cleaning gas plasma；And cooler, be arranged in supply pipe be configured to make cleaning gas be passed in the part of plasma generator, wherein, cooler includes around supply pipe and is configured to the pipe for flowing of refrigerant making cold-producing medium pass through。
In superincumbent equipment, cooler also includes around pipe for flowing of refrigerant and keeps outer tube under vacuum conditions。In superincumbent equipment, the space between pipe for flowing of refrigerant and outer tube keeps under vacuum conditions。In superincumbent equipment, cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。Equipment above also includes: other cooler, it is connected to plasma generator and is configured to cool down the cleaning gas discharged from plasma generator, wherein, cooler and described other cooler are positioned at the position adjacent with the opposite end of plasma generator。
Being the method manufacturing display device on the other hand, the method includes: form display unit in substrate；Process gas is fed to shower nozzle；Process gas is made to carry out the first plasma in the showerhead；The process gas of plasma is ejected on display unit, to form inorganic layer on the display unit；Substrate is taken out from chamber；Cleaning gas is made to carry out the second plasma；And the cleaning gas of plasma is fed to chamber, wherein, gas is cleaned at least one cooling in before and after the second plasma。
In the above methods, cleaning gas and flow in supply pipe, pipe for flowing of refrigerant is around supply pipe, wherein, supplies cold-producing medium between pipe for flowing of refrigerant and supply pipe, and wherein, the cleaning gas at supply Bottomhole pressure is cooled down by cold-producing medium。In the above methods, cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。In the above methods, outer tube is around pipe for flowing of refrigerant, wherein, is kept under vacuum conditions in the space between outer tube and pipe for flowing of refrigerant。Above method also includes the heat insulation component being positioned on the outer surface of outer tube。
Accompanying drawing explanation
Fig. 1 is the schematic sectional view of the equipment for manufacturing display device according to embodiment。
Fig. 2 is the amplification view of the part A of Fig. 1。
Fig. 3 is the sectional view of a part for the display device of the device fabrication by Fig. 1。
Fig. 4 is the schematic sectional view of the equipment for manufacturing display device according to another embodiment。
Detailed description of the invention
Embodiment will be made now referring in detail to, the example of embodiment is shown in the drawings, and wherein same labelling indicates same element all the time。On this point, the present embodiment can have different forms, and should not be construed as limited to the description set forth here。Therefore, embodiment is only described below, to explain the aspect of this description by referring to accompanying drawing。As used herein, term "and/or" includes one or more relevant any and all combination listd。When being expressed in after string element of such as " ... at least one (kind) (person) ", modify permutation element rather than modify the discrete component in this row element。
With reference to the accompanying drawings to be described more fully embodiment, the exemplary embodiment of invention illustrates in the accompanying drawings。But, the present invention can be embodied in many different forms, and should not be construed as limited to exemplary embodiments set forth herein。
Though figure number, identical or accordingly those assemblies by identical accompanying drawing labelling instruction, and omit the explanation of redundancy。
Although it will be appreciated that and can here use term " first ", " second " etc. to describe various assembly, but these assemblies should not be limited by these terms。These terms are only for distinguishing an assembly with another。
As used herein, unless context expressly states otherwise, otherwise singulative " ", " one ", " being somebody's turn to do " and " described " are also intended to include plural form。
It will be appreciated that when layer, region or assembly be referred to as " formed exist " another layer, region or assembly " on " time, it can directly or indirectly be formed on another layer described, region or assembly。Namely, for instance, it is possible to there is intermediate layer, region or assembly。
For the ease of explaining, the size of element in figure can be exaggerated。In other words, owing to for the ease of explaining, optionally illustrating size and the thickness of assembly in accompanying drawing, therefore the following examples are not limited to this。
When differently a certain embodiment can be implemented, it is possible to be different from the order of description to perform special process order。Such as, the technique of two continuous descriptions can perform substantially simultaneously or perform with the order contrary with the order described。In the disclosure, term " substantially " includes completely, almost completely or reach the implication according to some application and any significance degree according to those skilled in the art。Term " connection " includes electrical connection。
Fig. 1 is the schematic sectional view of the equipment 100 for manufacturing display device according to embodiment。Fig. 2 is the amplification view of the part A of Fig. 1。Display device can be flat faced display, for instance, Organic Light Emitting Diode (OLED) display or LCD display。
Seeing figures.1.and.2, manufacture equipment 100 includes chamber 110, shower nozzle 120, plasma generating unit or plasma generator 130, supply pipe 140, cooling unit or cooler 150, gas supply unit or gas supply device 190, main power supply unit or main charger 160, pedestal 170 and exhaust unit or exhaust apparatus 180。
Chamber 110 can include the opening formed on one side thereof。Opening can arrange gate valve 110-1 etc., therefore can open or close opening。
Shower nozzle 120 may be coupled to gas supply unit 190 and supply pipe 140。Can forming space in shower nozzle 120, this space can comprise the gas supplied by gas supply unit 190 or supply pipe 140。Shower nozzle 120 can form spray-hole so that shower nozzle 120 can connect with the inside of chamber 110。Spray-hole can spray gas towards pedestal 170。
Process gas and noble gas can be fed to shower nozzle 120 by gas supply unit 190。Such as, gas supply unit 190 supplies silane, ammonia, helium, hydrogen etc.。
By gas supply unit 190, these gases can be respectively supplied to shower nozzle 120, or these gas can be mixed to be fed to shower nozzle 120。Noble gas can be purge gas, it is possible to is the gas for forming plasma。
Supply pipe 140 may be coupled to shower nozzle 120 and supplies cleaning gas。In this case, supply pipe 140 may be coupled to outside and cleaning gas be directed to chamber 110。Clean gas and can include noble gas and the such as NF of such as argon or helium3Or the gas of HF。
Plasma generating unit 130 may be coupled to supply pipe 140。Plasma generating unit 130 can be remote plasma generator。Plasma generating unit 130 may be coupled to supply pipe 140, makes the cleaning gas plasma of supply, and provides chamber 110 by the cleaning gas of plasma。
Plasma generating unit 130 can include being connected to supply pipe 140 and the runner pipe 131 as the space forming plasma。Runner pipe 131 can have variously-shaped in arbitrary shape。Such as, runner pipe 131 be shaped as ellipse, semicircle or cylindricality。
Plasma generating unit 130 can include the outside being arranged on runner pipe 131 and the magnetic field formation unit 132 applying magnetic field。Magnetic field forms unit 132 can have FERRITE CORE shape。
Plasma generating unit 130 could be included for being fed to initial electrical the first power supply unit 133 of runner pipe 131。Plasma generating unit 130 can also include the electrode 134 being arranged in runner pipe 131 and being electrically connected to the first power supply unit 133。Primary power can be fed to cleaning gas by electrode 134。
Plasma generating unit 130 could be included for applying power to magnetic field and forms the second power supply unit 135 of unit 132。Radio frequency (RF) electric power can be applied to magnetic field and form unit 132 by the second power supply unit 135。
Plasma generating unit 130 can also include the end being connected to runner pipe 131 and the first cap 136 being connected to supply pipe 140。First cap 136 can be formed by ceramic material。
Plasma generating unit 130 can also include the other end being connected to runner pipe 131 and the second cap 137 being connected to supply pipe 140, discharges the cleaning gas of plasma through the second cap 137。Second cap 137 can also be formed by ceramic material。
Plasma generating unit 130 can also include being arranged on magnetic field and form the 3rd cooling unit (not shown) on the outer surface of unit 132 or runner pipe 131, to cool down plasma generating unit 130。3rd cooling unit receives from the coolant of environment and makes coolant circulate, thus preventing the temperature of plasma generating unit 130 from raising。
Cooling unit 150 can be arranged at least one part to select lower part: the cleaning gas cleaning gas part in its stream to plasma generating unit 130 and supply pipe 140 of supply pipe 140 flows out the part of plasma generating unit 130 through it。
In certain embodiments, cooling unit 150 includes the second cooling unit 150-2 in the cleaning gas being arranged on supply pipe 140 described part in its stream to plasma generating unit 130。In other embodiments, cooling unit 150 includes the cleaning gas being arranged on supply pipe 140 first cooling unit 150-1 in the described part that it flows out plasma generating unit 130。Cooling unit 150 can also include the first cooling unit 150-1 and the second cooling unit 150-2。For the ease of explaining, will be described in now cooling unit 150 and include the first cooling unit 150-1 and the situation of the second cooling unit 150-2。
First cooling unit 150-1 can cool down the cleaning gas discharged from plasma generating unit 130。In this case, the first cooling unit 150-1 can include the first pipe for flowing of refrigerant 151-1 around supply pipe 140。First cooling unit 150-1 can also include the first cold-producing medium supply pipe 152-1 that cold-producing medium is fed to the first pipe for flowing of refrigerant 151-1。Cold-producing medium can be at least one selected from nitrogen, helium and carbon dioxide。Cold-producing medium can with liquid supply。
First cooling unit 150-1 can also include the first refrigerant cycle pump 154-1 making the refrigerant cycle of the first cold-producing medium supply pipe 152-1。First cooling unit 150-1 can also include the first compressor 153-1 being arranged on the first cold-producing medium supply pipe 152-1 and compressing cold-producing medium。
First cooling unit 150-1 can also include the first outer tube 155-1 around the first pipe for flowing of refrigerant 151-1。Space between first outer tube 155-1 and the first pipe for flowing of refrigerant 151-1 may remain under vacuum state。
First cooling unit 150-1 can also include the first heat insulation component 156-1 around the first outer tube 155-1。First heat insulation component 156-1 can make the first outer tube 155-1 and extraneous air substantially completely completely cut off, thus preventing external heat to be passed to the first outer tube 155-1。Such as, the first heat insulation component 156-1 is formed by heat insulator。
First cooling unit 150-1 can also include the first connection unit or the first connector 157-1 that supply pipe 140 is connected to the first pipe for flowing of refrigerant 151-1 and the first outer tube 155-1。First connects unit 157-1 can substantially completely completely cut off the first pipe for flowing of refrigerant 151-1 and the first outer tube 155-1。Such as, in this case, first connects unit 157-1 is formed by ceramic material, so that the first cooling unit 150-1 is electrically connected to outside。In this case, the first connection unit 157-1 can form with the second cap 137。
First cooling unit 150-1 can also include the second connection unit or the second connector 158-1 that supply pipe 140 is connected to the first pipe for flowing of refrigerant 151-1 and the first outer tube 155-1。Second connects unit 158-1 can discharge the cleaning gas of flowing in supply pipe 140。
Second cooling unit 150-2 can be formed in the way of similar with the first cooling unit 150-1 described above。In this case, the second cooling unit 150-2 can be arranged on the upstream side of plasma generating unit 130。
Second cooling unit 150-2 can include second refrigerant runner pipe 151-2, the second outer tube 155-2, second refrigerant supply pipe 152-2, second refrigerant circulating pump 154-2, the second compressor 153-2, the second heat insulation component 156-2, the 3rd connection unit 157-2 and the four connection unit 158-2。
Main power supply unit 160 can make electric field be formed in chamber 110。In this case, main power supply unit 160 can include the main electric power applying unit 161 applying electric power and the main electrode unit 162 being electrically connected to main electric power applying unit 161。
Exchange (AC) electric power can be applied to main electrode unit 162 by main electric power applying unit 161。Main electrode unit 162 may be coupled to shower nozzle 120, chamber 110 and pedestal 170, and can form voltage difference between in shower nozzle 120 and chamber 110 and pedestal 170。
Pedestal 170 can be arranged in chamber 110, to rise or fall。Can substrate 210 be placed on pedestal 170, then mask M can be placed in substrate 210。Pedestal 170 can include the substrate control temperature unit (not shown) controlling the temperature of substrate 210。Substrate control temperature unit is essentially identical or similar to the substrate control temperature unit being arranged in usual pedestal, therefore omits its detailed description at this。
Exhaust unit 180 can include the conduit 181 being connected to chamber 110 and the pump 182 being arranged on conduit 181。Exhaust unit 180 can control the internal pressure of chamber 110, and the gas of chamber 110 can be discharged to outside。
In the operation of equipment 100, it is possible, firstly, to the substrate 210 with the display unit D being formed thereon is incorporated in chamber 110。Now, under the state that the inside of chamber 110 may be at air pressure, and gate valve 110-1 can open opening。
After substrate 210 is placed on pedestal 170, it is possible to be set to mask M separate with substrate 210。Afterwards, it is possible to sequentially or simultaneously supply process gas and noble gas, to form inorganic layer (not shown) on display unit D。Now, main power supply unit 160 can run, to form plasma in chamber 110, and can decomposition technique gas make the process gas deposition of decomposition on display unit D。
When the process is completed, it is possible to substrate 210 is taken out from chamber 110。It is then possible to cleaning gas is fed to chamber 110, with wash chamber 110。
Clean gas to flow in chamber 110 through supply pipe 140。Now, cleaning gas can through transfer pump 140 by the second cooling unit 150-2。Cold-producing medium can be fed to second refrigerant runner pipe 151-2, the cleaning gas flowed to be cooled in supply pipe 140。Such as, when second refrigerant circulating pump 154-2 runs, cold-producing medium can flow in second refrigerant supply pipe 152-2, and can will be fed to second refrigerant runner pipe 151-2 by the cold-producing medium of the second compressor 153-2 compression。Now, owing to second refrigerant runner pipe 151-2 is provided about supply pipe 140, therefore supply pipe 140 can carry out heat exchange with cold-producing medium, thus cooling down cleaning gas。
When cleaning gas cooled as stated above, the change cleaning the necessary free energy cleaning gas of the reaction between gas and supply pipe 140 can reduce。Therefore, cleaning the reaction between gas and supply pipe 140 can be slack-off, correspondingly cleans gas by forming few granule with the reaction on the surface of supply pipe 140。
As mentioned above, while the temperature cleaning gas reduces, the inside of the second outer tube 155-2 keeps under vacuum conditions, is therefore possible to prevent to cause generation dampness on the surface of second refrigerant runner pipe 151-2 because of direct contact the between second refrigerant runner pipe 151-2 and extraneous air。Additionally, the second outer tube 155-2 can make second refrigerant runner pipe 151-2 and extraneous air substantially completely completely cut off, so that the heat exchange on the surface of second refrigerant runner pipe 151-2 minimizes。
Second heat insulation component 156-2 can make the outer surface of the second outer tube 155-2 and extraneous air substantially completely completely cut off。Therefore, it can make second refrigerant runner pipe 151-2 and environment (or outside of housing) substantially completely completely cut off。
Cleaning gas cooled as above can be fed to plasma generating unit 130。Specifically, it is possible to be fed to, by cleaning gas, the runner pipe 131 being connected to supply pipe 140。Now, the first power supply unit 133 can apply power to electrode 134, and therefore primary power can be fed to the cleaning gas in the initial reaction stage stage。
The cleaning gas being supplied with primary power as above can decompose。When the second power supply unit 135 applies power to magnetic field formation unit 132, it is possible to make cleaning gas plasma。
Afterwards, it is possible to cleaning gas is fed to chamber 110 through supply pipe 140。Now, the first cooling unit 150-1 can to cool down cleaning gas with the second same or analogous mode of cooling unit 150-2。In detail, when cold-producing medium is fed to the first pipe for flowing of refrigerant 151-1, cleaning gas can be cooled by the heat exchange with cold-producing medium。Now, the first outer tube 155-1 and the first heat insulation component 156-1 is possible to prevent the first pipe for flowing of refrigerant 151-1 not by the impact of extraneous air, so that the first pipe for flowing of refrigerant 151-1 insulate and prevents the first pipe for flowing of refrigerant 151-1 by humidity corrosion。Additionally, the first connection unit 157-1 can make plasma generating unit 130 and the first cooling unit 150-1 electric screen。
Cleaning gas cooled as above can be fed to chamber 110, thus wash chamber 110。Now, owing to as mentioned above the cleaning gas being reduced to a certain degree is fed to chamber 110 by its temperature, therefore cleans gas and will not form granule when with the surface reaction of supply pipe 140。
Therefore, when manufacture equipment 100 can make cleaned gas stream in supply pipe 140, the quantity of produced granule minimizes, thus improve the life-span of equipment。Additionally, equipment 100 can prevent the deterioration of chamber 110 by lowered for its temperature cleaning gas is fed to chamber 110, thus preventing the inwall by chamber 110 and the reaction cleaned between gas and producing granule。
Fig. 3 is the sectional view of a part for the display device 200 manufactured by the equipment 100 of Fig. 1。
With reference to Fig. 3, display device 200 can include substrate 210 and display unit D。Display device 200 can also include thin film encapsulation layer E or form the encapsulating substrate (not shown) on display unit D。Encapsulating substrate is essentially identical or similar to the encapsulating substrate used in common display device, therefore omits its detailed description at this。It addition, for the ease of describing, will be described in now the situation that display device 200 includes thin film encapsulation layer E。
Display unit D can be formed in substrate 210。Display unit D can include thin film transistor (TFT) TFT, the passivation layer 270 of cover film transistor TFT and form Organic Light Emitting Diode (OLED) 280 on passivation layer 270。
Substrate 210 can be formed by glass material, but the exemplary embodiment of invention is not limited to this。Substrate 210 can be formed by the metal material of plastic material or such as rustless steel (SUS) or titanium (Ti)。Selectively, substrate 210 can use polyimides (PI)。For the ease of describing, will be described in now the situation that substrate 210 is formed by glass material。
The cushion 220 formed by organic compound and/or inorganic compound is further formed on the upper surface of substrate 210。Cushion 220 can by silicon oxide (SiOx) (x >=1) or silicon nitride (SiNx) (x >=1) formation。
The active layer 230 arranged in a predetermined pattern is formed on cushion 220, is then covered by gate insulator 240。Active layer 230 includes source region 231 and drain region 233, and also includes the channel region 232 between source region 231 and drain region 233。
Active layer 230 can be formed as including various material。Such as, active layer 230 can include the inorganic semiconductor material of such as non-crystalline silicon or silicon metal。As another example, active layer 230 can include oxide semiconductor。As another example, active layer 230 can include organic semiconducting materials。But, for the ease of describing, will be described in now the situation that active layer 230 is formed by non-crystalline silicon。
Active layer 230 can be formed in the following manner: forms amorphous silicon layer on cushion 220, makes amorphous silicon layer to form polysilicon layer, make polysilicon layer be patterned。Adulterated in source region 231 and the drain region 233 of active layer 230 by the TFT type impurity according to such as driving TFT (not shown), switch TFT etc.。
In the face of the gate electrode 250 of active layer 230 and the interlayer insulating film 260 of covering grid electrode 250 are formed on the upper surface of gate insulator 240。
Interlayer insulating film 260 and gate insulator 240 are formed contact hole H1, on interlayer insulating film 260, then forms source electrode 271 and drain electrode 272 so that source electrode 271 contacts source region 231 and drain region 233 respectively with drain electrode 272。
Passivation layer 270 is formed on the thin film transistor (TFT) TFT of formation as described above, and the pixel electrode 281 of OLED280 is formed on passivation layer 270。Pixel electrode 281 contacts the drain electrode 272 of thin film transistor (TFT) TFT by forming the through hole H2 in passivation layer 270。Passivation layer 270 can be formed by inorganic material and/or organic material, and can be formed as single or multiple lift。Passivation layer 270 can be formed as planarization layer so that its upper surface is smooth and be left out the roughness of the lower floor of passivation layer 270, or can be formed as uneven according to the roughness of lower floor。Passivation layer 270 can be formed by transparent insulator, thus realizing resonance effect。
Passivation layer 270 is formed after pixel electrode 281, organic material and/or inorganic material forms pixel confining layers 290 so that pixel confining layers 290 covers passivation layer 270。Pixel confining layers 290 has the opening through its exposure pixel electrode 281。
Intermediate layer 282 and to electrode 283 at least formed on pixel electrode 281。
Pixel electrode 281 is used as anode, and electrode 283 is used as negative electrode。Selectively, pixel electrode 281 can serve as negative electrode, and electrode 283 be can serve as anode。
Pixel electrode 281 and electrode 283 is insulated from each other by intermediate layer 282, and respectively the voltage of opposite polarity is applied to intermediate layer 282, to induce the light emission in organic emission layer。
Intermediate layer 282 can include organic emission layer。Such as, intermediate layer 282 includes organic emission layer。But, intermediate layer 282 can also include at least one in hole injection layer (HIL), hole transmission layer (HTL), electron transfer layer (ETL) and electron injecting layer (EIL)。
One unit pixel P includes multiple sub-pixel R, G and B, and multiple sub-pixel R, G and B can launch the light of shades of colour。Such as, unit pixel P can include the multiple sub-pixel R, G and the B that launch HONGGUANG, green glow and blue light respectively, or launches multiple sub-pixel (not shown) of HONGGUANG, green glow, blue light and white light respectively。
Thin film encapsulation layer E can include multiple inorganic layer, or can include inorganic layer and organic layer。
The organic layer of thin film encapsulation layer E is formed by polymer, and can be the monolayer or layer stack stack that are formed by polyethylene terephthalate (PET), polyimides, Merlon (PC), epoxy resin, polyethylene or polyacrylate。Organic layer can be formed by polyacrylate。In detail, organic layer can include the product that makes to comprise the polymerizing monomer components of diacrylate monomer and triacrylate class monomer。Monomer component can also include mono acrylic ester class monomer。Monomer component can also include the well-known light trigger of such as trimethyl benzoyl diphenyl base phosphine oxide (TPO), but the exemplary embodiment of the present invention is not limited to this。
The inorganic layer of thin film encapsulation layer E can be the monolayer or the layer stack stack that include metal-oxide or metal nitride。In detail, inorganic layer can include SiNx、Al2O3、SiO2Or TiO2。
The superiors being exposed to outside in thin film encapsulation layer E can be formed by inorganic layer, to prevent dampness from permeating to OLED280。
Thin film encapsulation layer E can include at least one sandwich structure plugging at least one organic layer between at least two inorganic layer。Selectively, thin film encapsulation layer E can include at least one sandwich structure of plugging at least one inorganic layer between at least two organic layer。Selectively, thin film encapsulation layer E can include the sandwich structure plugging at least one organic layer between at least two inorganic layer and the sandwich structure plugging at least one inorganic layer between at least two organic layer。
Thin film encapsulation layer E can include the first inorganic layer U1, the first organic layer O1 and the second inorganic layer U2 that the top from OLED280 starts to sequentially form。
Selectively, thin film encapsulation layer E can include the first inorganic layer, the first organic layer, the second inorganic layer, the second organic layer and the 3rd inorganic layer that the top from OLED280 starts to sequentially form。
Selectively, thin film encapsulation layer E can include the first inorganic layer, the first organic layer, the second inorganic layer, the second organic layer, the 3rd inorganic layer, the 3rd organic layer and the 4th inorganic layer that the top from OLED280 starts to sequentially form。
The metal halide layer of lithium fluoride (LiF) can also be included between OLED280 and the first inorganic layer U1。Metal halide layer damages OLED280 when being possible to prevent by sputtering and forming the first inorganic layer U1。
First organic layer can have the area less than the second inorganic layer, and the second organic layer can also have the area less than the 3rd inorganic layer。
For the ease of describing, thin film encapsulation layer E will be mainly described in detail include now the situation of the first inorganic layer U1, the first organic layer O1 and the second inorganic layer U2。
The method (seen figures.1.and.2 and it is described) that can pass through equipment 100 and manufacture display device manufactures the first inorganic layer U1 and the second inorganic layer U2。Owing to the first inorganic layer U1 and the second inorganic layer U2 is substantially identical to one another or similar, therefore to be easy to describe, first inorganic layer U1 will be mainly described in detail。
First inorganic layer U1 can densely be formed because making to be minimized by the quantity cleaning the granule etc. that gas produces。In detail, in the related art, the purgative gas in supply pipe 140 grade know from experience and produce substantial amounts of granule, therefore, when forming the first inorganic layer U1, the first inorganic layer U1 can include granule。But, when the device is in use, it is possible to making the quantity of the granule that cleaning gas produces minimize, the foreign body that therefore can make such as granule when forming the first inorganic layer U1 is minimized。
Therefore, display device 200 can stop outside moisture and oxygen effectively by including the inorganic layer of densification。Additionally, when manufacturing multiple display device 200, display device 200 can include the thin film encapsulation layer E substantially with same performance。
Fig. 4 is the schematic sectional view of the equipment 100A for manufacturing display device according to another embodiment。
With reference to Fig. 4, manufacture equipment 100A and include chamber 110A, shower nozzle 120A, plasma generating unit 130A, supply pipe 140A, cooling unit 150A, gas supply unit 190A, main power supply unit 160A, pedestal 170A and exhaust unit 180A。
Gate valve 110A-1 can be arranged in chamber 110A。Main power supply unit 160A can include main electric power applying unit 161A and main electrode unit 162A, exhaust unit 180A can include conduit 181A and pump 182A。
Chamber 110A, shower nozzle 120A, plasma generating unit 130A, supply pipe 140A, gas supply unit 190A, main power supply unit 160A, pedestal 170A and the chamber 110 that exhaust unit 180A describes above with reference to Fig. 1 and Fig. 2, shower nozzle 120, plasma generating unit 130, supply pipe 140, gas supply unit 190, main power supply unit 160, pedestal 170 are essentially identical with exhaust unit 180 or similar, therefore omit its detailed description at this。
Cooling unit 150A can cool down the cleaning gas being incorporated in plasma generating unit 130A。In this case, cooling unit 150A can include the pipe for flowing of refrigerant 151A around supply pipe 140A。Cooling unit 150A can also include the cold-producing medium supply pipe 154A that cold-producing medium is fed to pipe for flowing of refrigerant 151A。Cold-producing medium can be at least one selected from nitrogen, helium and carbon dioxide。Specifically, cold-producing medium can with liquid supply。
Cooling unit 150A can include cold-producing medium supply pipe 154A and refrigerant cycle pump 152A, cold-producing medium supply pipe 154A is connected to pipe for flowing of refrigerant 151A and cold-producing medium is fed to pipe for flowing of refrigerant 151A, and refrigerant cycle pump 152A makes the refrigerant cycle of cold-producing medium supply pipe 154A。Cooling unit 150A can also include the compressor 153A being arranged on cold-producing medium supply pipe 154A and compressing cold-producing medium。
Cooling unit 150A can also include the outer tube 155A around pipe for flowing of refrigerant 151A。Space between outer tube 155A and pipe for flowing of refrigerant 151A may remain under vacuum state。
Cooling unit 150A can also include the heat insulation component 156A around outer tube 155A。Heat insulation component 156A can make outer tube 155A and extraneous air substantially completely completely cut off, thus preventing external heat to be passed to outer tube 155A。Heat insulation component 156A can be formed by heat insulator。
Cooling unit 150A can include being connected to the first of supply pipe 140A and connect unit 157A and the second connection unit 158A。First connect that unit 157A and the second connect in unit 158A each can seal pipe for flowing of refrigerant 151A and outer tube 155A, and supply pipe 140A is connected to cooling unit 150A。First connects unit 157A and the second connection unit 158A can be formed by ceramic material, so that cooling unit 150A insulation。
In the operation of equipment 100A, it is possible to be incorporated in chamber 110A by the substrate 210 with the display unit D being formed thereon, then can be set to mask M separate with substrate 210。
Afterwards, it is possible to sequentially or simultaneously supply process gas and noble gas, to form inorganic layer (not shown) on display unit D。Now, main power supply unit 160A can make plasma be formed in chamber 110A。
After mask M is separated with substrate 210, it is possible to substrate 210 is taken out from chamber 110A, and can wash chamber 110A。
Through supply pipe 140A, cleaning gas can be fed to plasma generating unit 130A。Before being supplied to plasma generating unit 130A, it is possible to clean gas by cooling unit 150A cooling。
Such as, when cleaning gas and flowing in supply pipe 140A, refrigerant cycle pump 152A can run, by using compressor 153A to be compressed by the cold-producing medium of flowing in cold-producing medium supply pipe 154A, then the cold-producing medium of compression is fed to pipe for flowing of refrigerant 151A。Now, cold-producing medium can by cooling down cleaning gas with the heat exchange on the surface of supply pipe 140A。Additionally, outer tube 155A and heat insulation component 156A can make pipe for flowing of refrigerant 151A and extraneous air isolation, and pipe for flowing of refrigerant 151A is made to insulate。
Cleaning gas cooled as above plasma generating unit 130A can be fed to so that its plasma, then the cooling gas of plasma chamber 110A can be fed to。The method running plasma generating unit 130A is essentially identical or similar above with reference to Fig. 1 and Fig. 2 method described, and therefore omits its detailed description at this。Additionally, the method for wash chamber 110A is essentially identical or similar above with reference to Fig. 1 and Fig. 2 method described, therefore omit its detailed description at this。
When completing such technique and therefore forming inorganic layer on display unit D, it is possible to form organic layer in another chamber on inorganic layer。Multiple display device (not shown) can individually experience this technique。In some cases, it is possible to single display device is performed repeatedly this technique。
Therefore, the quantity of the granule produced when equipment 100A makes cleaning gas flow in supply pipe 140A minimizes, thus improve the life-span of equipment。Additionally, equipment 100A can be fed to chamber 110A by the cleaning gas its temperature being lowered prevents the deterioration of chamber 110A, thus prevent the reaction between the inwall by chamber 110A and cleaning gas and produce granule。
At least one in disclosed embodiment improves the productivity ratio of display device。
It should be understood that and only consider exemplary embodiment described here, but not the purpose in order to limit with illustrative implication。The description of the feature in each embodiment or aspect is generally considered as other the similar feature or the aspect that can be used in other embodiments。
Although the exemplary embodiment with reference to inventive technique specifically illustrates and describes inventive technique, but what those skilled in the art will appreciate that is, when without departing from the spirit and scope of the present invention being such as defined by the claims, it is possible to make the various changes in form and in details at this。
Claims (20)
1. the equipment being used for manufacturing display device, it is characterised in that described equipment includes:
Chamber；
Supply pipe, is configured to supply and cleans gas；
Plasma generator, is connected to described supply pipe and is configured to make described cleaning gas plasma；And
First cooler, is connected to described plasma generator and is configured to the described cleaning gas that cooling is discharged from described plasma generator,
Wherein, described first cooler includes around the outer surface of described supply pipe and is configured to the first pipe for flowing of refrigerant making cold-producing medium pass through。
2. equipment according to claim 1, it is characterised in that described cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。
3. equipment according to claim 1, it is characterised in that described first cooler also includes the first outer tube around described first pipe for flowing of refrigerant, wherein, forms gap between inner surface and the outer surface of described first pipe for flowing of refrigerant of described first outer tube。
4. equipment according to claim 3, it is characterised in that described gap keeps under vacuum conditions。
5. equipment according to claim 3, it is characterised in that described first cooler also includes the first heat insulation component around described first outer tube。
6. equipment according to claim 1, it is characterized in that, described first cooler also includes the first connector, and described first connector is located between described plasma generator and described supply pipe and is configured to seal described supply pipe and described first pipe for flowing of refrigerant。
7. equipment according to claim 6, it is characterised in that described first connector is formed by pottery。
8. equipment according to claim 1, it is characterised in that described equipment also includes the second cooler, be arranged on described supply pipe be configured to make described cleaning gas be passed in the part in described plasma generator。
9. equipment according to claim 8, it is characterised in that described second cooler includes around described supply pipe and is configured to the second refrigerant runner pipe making cold-producing medium pass through。
10. equipment according to claim 9, it is characterised in that described second cooler also includes around described second refrigerant runner pipe and keeps the second outer tube under vacuum conditions。
11. one kind for manufacturing the equipment of display device, it is characterised in that described equipment includes:
Chamber；
Supply pipe, is configured to supply and cleans gas；
Plasma generator, is connected to described supply pipe and is configured to make described cleaning gas plasma；And
Cooler, be arranged in described supply pipe be configured to make described cleaning gas be passed in the part of described plasma generator,
Wherein, described cooler includes around described supply pipe and is configured to the pipe for flowing of refrigerant making cold-producing medium pass through。
12. equipment according to claim 11, it is characterised in that described cooler also includes around described pipe for flowing of refrigerant and keeps outer tube under vacuum conditions。
13. equipment according to claim 12, it is characterised in that the space between described pipe for flowing of refrigerant and described outer tube keeps under vacuum conditions。
14. equipment according to claim 11, it is characterised in that described cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。
15. equipment according to claim 11, it is characterised in that described equipment also includes:
Other cooler, it is connected to described plasma generator and is configured to the described cleaning gas that cooling is discharged from described plasma generator, wherein, described cooler and described other cooler are positioned at the position that the end opposed with described plasma generator is adjacent。
16. the method manufacturing display device, it is characterised in that described method includes:
Substrate is formed display unit；
Process gas is fed to shower nozzle；
Described shower nozzle make described process gas carry out the first plasma；
The process gas of plasma is ejected on described display unit, to form inorganic layer on described display unit；
Described substrate is taken out from chamber；
Cleaning gas is made to carry out the second plasma；And
The cleaning gas of plasma is fed to described chamber,
Wherein, at least one in before and after described second plasma cools down described cleaning gas。
17. method according to claim 16, it is characterized in that: described cleaning gas flows in described supply pipe, pipe for flowing of refrigerant is around described supply pipe, wherein, cold-producing medium is supplied between described pipe for flowing of refrigerant and described supply pipe, wherein, the described cleaning gas at described supply Bottomhole pressure is cooled down by described cold-producing medium。
18. method according to claim 17, it is characterised in that described cold-producing medium include following at least one: nitrogen, helium and carbon dioxide。
19. method according to claim 17, it is characterised in that outer tube is around described pipe for flowing of refrigerant, wherein, the space between described outer tube and described pipe for flowing of refrigerant is kept under vacuum conditions。
20. method according to claim 19, it is characterised in that described method also includes the heat insulation component being positioned on the outer surface of described outer tube。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140177822A KR20160070929A (en) | 2014-12-10 | 2014-12-10 | Apparatus for manufacturing display apparatus and method of manufacturing display apparatus |
| KR10-2014-0177822 | 2014-12-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105702549A true CN105702549A (en) | 2016-06-22 |
| CN105702549B CN105702549B (en) | 2020-06-19 |
Family
ID=56228123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510733044.XA Active CN105702549B (en) | 2014-12-10 | 2015-11-02 | Apparatus for manufacturing display device and method of manufacturing display device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20160070929A (en) |
| CN (1) | CN105702549B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112233961A (en) * | 2019-07-15 | 2021-01-15 | Tes股份有限公司 | Substrate processing apparatus |
| CN112424921A (en) * | 2018-07-13 | 2021-02-26 | Lg电子株式会社 | Refrigerating machine |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102474022B1 (en) * | 2018-06-25 | 2022-12-05 | 주성엔지니어링(주) | Appratus for processing substrate |
| KR102410743B1 (en) | 2020-02-18 | 2022-06-21 | 세메스 주식회사 | Method and Apparatus for cleaning component |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09219295A (en) * | 1996-01-30 | 1997-08-19 | Applied Materials Inc | Liquid cooled remote plasma applicator |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CN102002686A (en) * | 2010-11-02 | 2011-04-06 | 深圳市华星光电技术有限公司 | Chemical vapor deposition equipment and cooling tank thereof |
-
2014
- 2014-12-10 KR KR1020140177822A patent/KR20160070929A/en not_active Application Discontinuation
-
2015
- 2015-11-02 CN CN201510733044.XA patent/CN105702549B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09219295A (en) * | 1996-01-30 | 1997-08-19 | Applied Materials Inc | Liquid cooled remote plasma applicator |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CN102002686A (en) * | 2010-11-02 | 2011-04-06 | 深圳市华星光电技术有限公司 | Chemical vapor deposition equipment and cooling tank thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112424921A (en) * | 2018-07-13 | 2021-02-26 | Lg电子株式会社 | Refrigerating machine |
| CN112424921B (en) * | 2018-07-13 | 2023-08-11 | Lg电子株式会社 | Refrigerating machine |
| CN112233961A (en) * | 2019-07-15 | 2021-01-15 | Tes股份有限公司 | Substrate processing apparatus |
| CN112233961B (en) * | 2019-07-15 | 2024-06-11 | Tes股份有限公司 | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160070929A (en) | 2016-06-21 |
| CN105702549B (en) | 2020-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105702549A (en) | Device for manufacturing display device and method for manufacturing the same | |
| CN104377317A (en) | Thin film encapsulation layer manufacturing apparatus and method of manufacturing display apparatus using the same | |
| KR101990555B1 (en) | Thin film encapsulation manufacturing device and manufacturing method of thin film encapsulation | |
| CN106449711B (en) | The production method of flexible displayer | |
| US9530990B2 (en) | Plasma curing of PECVD HMDSO film for OLED applications | |
| KR101673016B1 (en) | Thin film encapsulation manufacturing device and manufacturing method of display apparatus using the same | |
| US8771420B2 (en) | Substrate processing apparatus | |
| CN105489630B (en) | Apparatus and method for manufacturing display device | |
| US8986794B2 (en) | Vapor deposition apparatus and method of manufacturing organic light-emitting display apparatus | |
| TWI820066B (en) | Apparatus and method of manufacturing display apparatus | |
| US10211427B2 (en) | Display device and apparatus and method for manufacturing the same | |
| CN109234708A (en) | Chemical vapor depsotition equipment and the method for showing equipment using its manufacture | |
| US9803279B2 (en) | Apparatus and method for manufacturing display apparatus | |
| US20190131585A1 (en) | Apparatus of pecvd and manufacturing method of oled panel | |
| CN104576282A (en) | Plasma processing apparatus and plasma processing method | |
| KR20040102051A (en) | Device and method for forming film for organic el element using inductive coupling cvd | |
| KR102528303B1 (en) | Apparatus and method for manufacturing a display device | |
| KR20140007683A (en) | Organic light emitting display device and the fabrication method thereof | |
| JP2023156313A (en) | Method for HMDSO thermal stability | |
| TW201834123A (en) | Substrate transfer device and plasma processing system and method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |