CN105699904A - Battery voltage detecting circuit and method - Google Patents
Battery voltage detecting circuit and method Download PDFInfo
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- CN105699904A CN105699904A CN201610035227.9A CN201610035227A CN105699904A CN 105699904 A CN105699904 A CN 105699904A CN 201610035227 A CN201610035227 A CN 201610035227A CN 105699904 A CN105699904 A CN 105699904A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/382—Arrangements for monitoring battery or accumulator variables, e.g. SoC
- G01R31/3835—Arrangements for monitoring battery or accumulator variables, e.g. SoC involving only voltage measurements
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Abstract
The embodiment of the invention discloses a battery voltage detecting circuit and method. The battery voltage detecting circuit comprises a current-limiting resistor, a diode, a single-chip microcomputer. One end of the current-limiting resistor is connected with the positive pole of a battery to be tested and the other end of the current-limiting resistor is connected with the positive input end of a diode. The output end of the diode is connected with the negative pole of the battery to be tested. The Vin interface of an ADC module in the single-chip microcomputer is connected with the positive input end of the diode and the Vref interface of the ADC module is connected with the positive pole of the battery to be tested. Since the forward voltage drop of the diode has a basically invariable characteristic, the actual voltage value of the battery to be tested can be calculated by using an inversion deriving method. The battery voltage detecting circuit replaces a boost chip in the prior art by the current-limiting resistor and the diode so as to achieve low element cost and effectively reduce cost. The battery voltage detecting method also provides a step of calibrating the actual forward voltage drop of the diode so as to increase the measurement precision of the battery voltage.
Description
Technical field
The present invention relates to circuit engineering field, particularly relate to testing circuit and the voltage detection method of a kind of cell voltage。
Background technology
Along with the kind of hand-hold electronic equipments and low power dissipation electron equipment increases gradually, the voltage detecting of the supply module of electronic equipment becoming the conventional modules of electronic equipment, usual way is to use boost chip to be used as a reference source to measure magnitude of voltage。
As it is shown in figure 1, for conventional based on the single-chip microprocessor MCU testing circuit schematic diagram being internally integrated ADC in prior art, the reference voltage input at described testing circuit is provided with boost chip and voltage stabilizing chip。At voltage detecting process, cell voltage Vbat is after described boost chip is raised to fixed voltage, input in voltage stabilizing chip again, the last Vref end being input to described ADC as fiducial reference source, simultaneously, cell voltage Vbat is also input to the Vin end of described ADC as collection voltage, and described ADC obtains transforming numerical, i.e. Vin digital quantity according to described voltage Vbat simultaneously。The precision assuming described ADC is nbit, then the full scale of described ADC is 2n-1, the ratio Vbat/Vref according to two analog voltages, equal to the ratio (Vin digital quantity)/(2 of corresponding described ADC conversion valuen-1), following relational expression Vbat=(Vin digital quantity)/(2 is obtainedn-1) * Vref, Vbat is the current voltage value of battery。
But the relatively costly and circuit structure of boost chip and voltage stabilizing chip is more complicated in above-mentioned testing circuit, can not meet reduction cost, user's request easy to use。
Summary of the invention
The embodiment of the present invention provides testing circuit and the voltage detection method of a kind of cell voltage, the problem high to solve battery voltage detection circuit cost of the prior art。
In order to solve above-mentioned technical problem, the embodiment of the invention discloses following technical scheme:
According to first aspect of the invention process, it is provided that the testing circuit of a kind of cell voltage, including current-limiting resistance R, diode D and single-chip microprocessor MCU, wherein:
One end of described current-limiting resistance R for connecting the positive pole of mesuring battary, the other end be connected to the positive input of described diode D, the outfan of described diode D is for connecting the negative pole of described mesuring battary;
Being provided with ADC in described single-chip microprocessor MCU, the Vin interface of described ADC is connected to the positive input of described diode D, Vref interface for connecting the positive pole of described mesuring battary。
Preferably, described testing circuit also includes electric capacity of voltage regulation C, and described electric capacity of voltage regulation C is connected in parallel on the two ends of described diode D。
Preferably, described diode D includes the silicon-based diode D that forward voltage drop is 0.5-0.7V。
Preferably, the resistance of described current-limiting resistance R is 100-500K。
According to second aspect of the invention process, it is provided that the voltage detection method of a kind of cell voltage, the testing circuit utilized battery voltage to, including:
By canonical reference voltage source, input normal voltage to the Vref interface end of described ADC;
According to described normal voltage, calculate the true forward voltage drop V of described diode D0;
Mesuring battary is accessed described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary。
Preferably, described mesuring battary is accessed described circuit to be detected, calculate the actual voltage value Vbat of described mesuring battary, including:
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC;
Precision figure place n according to described ADC, described forward voltage drop V0With described Vin digital quantity N, draw the actual voltage value of described mesuring battary, wherein, Vbat=(V0/N)*(2n-1)。
Preferably, described mesuring battary is accessed described circuit to be detected, calculate the actual voltage value Vbat of described mesuring battary, including:
The reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end in the described ADC of corresponding acquisition;
According to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, set up the demarcation relation table that described Vin digital quantity is corresponding with described reference voltage;
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end output in described ADC1;
According to described Vin digital quantity N1With described demarcation relation table, utilize look-up interpolations to calculate the actual voltage value Vbat of described mesuring battary。
Preferably, described mesuring battary is accessed described circuit to be detected, calculate the actual voltage value Vbat of described mesuring battary, including:
The reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end output in the described ADC of corresponding acquisition;
According to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, it is thus achieved that the characteristic curve that described reference voltage changes with described Vin digital quantity;
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC2;
By described Vin digital quantity N2Substitute into described characteristic curve, calculate the actual voltage value Vbat of described mesuring battary。
From above technical scheme, the testing circuit of a kind of cell voltage that the embodiment of the present invention provides, including current-limiting resistance R, diode D and single-chip microprocessor MCU, wherein: one end of described current-limiting resistance R for connecting the positive pole of mesuring battary, the other end be connected to the positive input of described diode D, the outfan of described diode D is for connecting the negative pole of described mesuring battary;Being provided with ADC in described single-chip microprocessor MCU, the Vin interface of described ADC is connected to the positive input of described diode D, Vref interface for connecting the positive pole of described mesuring battary。In battery voltage detection process, mesuring battary accesses described testing circuit, owing to described diode D two ends add after forward voltage turns it on, its forward voltage drop has the characteristic being held essentially constant, so by the method for reverse derivation, just can calculate described mesuring battary and access the reference voltage of described Vref interface, be the actual voltage value of described mesuring battary。Described testing circuit substitutes boost chip of the prior art and voltage stabilizing chip by a resistance and diode, and element cost is low, it is possible to effectively reduce the cost of testing circuit;And resistance in described testing circuit and diode small volume, circuit level is high, it is possible to effectively save the area of circuit board。
Meanwhile, in the voltage detection method that the embodiment of the present invention provides, additionally provide the demarcating steps of actual forward pressure drop to described diode D, and then the certainty of measurement to cell voltage can be effectively improved。
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, for those of ordinary skills, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings。
Based on the single-chip microcomputer detection circuit schematic diagram being internally integrated ADC in the prior art that Fig. 1 provides for the embodiment of the present invention;
The testing circuit schematic diagram of a kind of cell voltage that Fig. 2 provides for the embodiment of the present invention;
The flowage structure of the voltage detection method of a kind of cell voltage that Fig. 3 provides for the embodiment of the present invention;
The flowage structure of the voltage detection method of another cell voltage that Fig. 4 provides for the embodiment of the present invention;
The flowage structure of the voltage detection method of another cell voltage that Fig. 5 provides for the embodiment of the present invention。
Detailed description of the invention
In order to make those skilled in the art be more fully understood that the technical scheme in the present invention, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiments。Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, all should belong to the scope of protection of the invention。
Referring to Fig. 1, for the testing circuit schematic diagram of a kind of cell voltage that the embodiment of the present invention provides, described testing circuit includes current-limiting resistance R, diode D and single-chip microprocessor MCU。
One end of described current-limiting resistance R for connecting the positive pole of mesuring battary, the other end be connected to the positive input of described diode D, the outfan of described diode D is for connecting the negative pole of described mesuring battary;Being provided with ADC in described single-chip microprocessor MCU, the Vin interface of described ADC is connected to the positive input of described diode D, Vref interface for connecting the positive pole of described mesuring battary;Wherein, the Vcc interface of described single-chip microprocessor MCU can also be connected to the positive pole of described mesuring battary, for powering for described single-chip microprocessor MCU。
Further, in order to improve the anti-interference of described testing circuit, described testing circuit also includes electric capacity of voltage regulation C, and described electric capacity of voltage regulation C is connected in parallel on the two ends of described diode D。
In the present embodiment, described diode can be switching diode or commutation diode etc., as long as meeting precision under wide temperature, such as, it is possible to adopt cheap, versatility good, forward voltage drop is the high accuracy IN4148 silicon-based diode of 0.5-0.7V;In order to reduce the power consumption of described testing circuit, the resistance of described current-limiting resistance R is 100-500K, is certainly not limited to described numerical range, it is also possible to select diode or the resistance of other model according to actual needs。
The embodiment of the present invention, support that wide-voltage range is powered according to single-chip microcomputer great majority of the prior art, so reference voltage part substitutes boost chip of the prior art, cell voltage Vbat is directly used to be input to described Vref interface as the reference voltage, i.e. Vref=Vbat。
After being connected by a big current-limiting resistance R and diode D, access cell voltage Vbat, simultaneously adding after forward voltage turns it on according to diode two ends, its forward voltage drop has the characteristic being held essentially constant, and the positive input at described diode D accesses the Vin interface of described ADC and connects。
In the present embodiment, the precision of described ADC is 12bit, according to Vin=(Vin digital quantity)/4095*Vref, then can reverse push to derive the voltage of Vref be Vref=Vin/ (Vin digital quantity) * 4095;Further, according to Vin equal to the forward voltage drop tube of described diode D, then can in the hope of and go out Vref, be cell voltage Vbat。Certainly, the precision of described ADC can also be other value。
In the present embodiment, described testing circuit substitutes boost chip of the prior art and voltage stabilizing chip by described current-limiting resistance R and described diode D, and element cost is low, it is possible to effectively reduce the cost of testing circuit;And resistance in described testing circuit and diode small volume, circuit level is high, it is possible to effectively save the area of circuit board。
The present embodiment additionally provides the detection method of cell voltage, it is illustrated in figure 3 the flowage structure of the voltage detection method of a kind of cell voltage that the embodiment of the present invention provides, described detection method uses the described testing circuit that the present embodiment provides, and specifically includes following steps:
S110: by canonical reference voltage source, input normal voltage to the Vref interface end of described ADC。
Wherein, the input of described current-limiting resistance R and described diode D institute built-up circuit can connect the positive pole of mesuring battary, it is also possible to connects described reference voltage source, does not limit in the present embodiment。
S120: according to described normal voltage, calculate the true forward voltage drop V of described diode0。
Concrete, according to the Vin digital quantity of Vin end in described normal voltage, described ADC and described ADC precision, calculates and is input in described ADC the voltage of Vin end, the i.e. true forward voltage drop V of described diode0。
The actual forward pressure drop of described diode, by accessing described standard voltage source, is demarcated, it is possible to know the true forward voltage drop of described diode, and then can be effectively improved the follow-up certainty of measurement to cell voltage by the present embodiment。
S130: mesuring battary accesses described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary。
Concrete comprises the steps:
S1301: mesuring battary accesses described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC。
S1302: the precision figure place n according to described ADC, described forward voltage drop V0With described Vin digital quantity N, draw the actual voltage value of described mesuring battary, wherein, Vbat=(V0/N)*(2n-1)。
In order to improve the data amount of calculation reducing described single-chip microprocessor MCU, thus reducing power consumption, the embodiment of the present invention additionally provides the mode by tabling look-up, and calculates the actual voltage value of described mesuring battary。As shown in Figure 4, for the flowage structure of voltage detection method of another cell voltage that the embodiment of the present invention provides, namely specifically include following steps in step 130。
S210: the reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end in the described ADC of corresponding acquisition。
S220: according to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, set up the demarcation relation table that described Vin digital quantity is corresponding with described reference voltage。
S230: mesuring battary accesses described circuit to be detected, obtains the Vin digital quantity N of Vin end output in described ADC1。
S240: according to described Vin digital quantity N1With described demarcation relation table, utilize look-up interpolations to calculate the actual voltage value Vbat of described mesuring battary。
In order to improve the measuring accuracy of described testing circuit further, the embodiment of the present invention additionally provides the characteristic curve that the voltage of matching Vref end changes with the digital quantity of Vin end, calculates the actual voltage value of described mesuring battary by calling the algorithm of characteristic curve。As it is shown in figure 5, the flowage structure of voltage detection method of another cell voltage provided for the embodiment of the present invention, namely specifically include following steps in step 130。
S310: the reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end output in the described ADC of corresponding acquisition。
S310: according to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, it is thus achieved that the characteristic curve that described reference voltage changes with described Vin digital quantity。
S330: mesuring battary accesses described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC2。
S340: by described Vin digital quantity N2Substitute into described characteristic curve, calculate the actual voltage value Vbat of described mesuring battary。
It is, of course, also possible to use the look-up table that the present embodiment provides and the algorithm calling characteristic curve simultaneously, improve the computational accuracy of the virtual voltage to mesuring battary further。
The embodiment of the present invention additionally provides the chip using STM32F103ZET6 model, the voltage of the diode of the STM32 gathered by chip and the ratio of actual diode voltage, by Vref=(canonical reference source/stm32 measured value) * (diode virtual voltage), wherein, diode virtual voltage is 0.556V, calculate the actual voltage value at Vref end, measure as shown in Table 1 through reality:
Table one:
Be can be seen that by table one, when the ceiling voltage that reference voltage requires lower than chip, reference voltage and collection are worth inversely proportional relation, within the scope of this, the battery voltage error recorded is less than 0.01V, the testing circuit that the embodiment of the present invention provides is described, the required precision for battery voltage measurement in current electronic equipment can be met completely。
It should be noted that, in this article, the such as relational terms of " first " and " second " or the like is used merely to separate an entity or operation with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially。And, term " includes ", " comprising " or its any other variant are intended to comprising of nonexcludability, so that include the process of a series of key element, method, article or equipment not only include those key elements, but also include other key elements being not expressly set out, or also include the key element intrinsic for this process, method, article or equipment。When there is no more restriction, statement " including ... " key element limited, it is not excluded that there is also other identical element in including the process of described key element, method, article or equipment。
The above is only the specific embodiment of the present invention, makes to skilled artisans appreciate that or realize the present invention。The multiple amendment of these embodiments be will be apparent to one skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments。Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty。
Claims (8)
1. the testing circuit of a cell voltage, it is characterised in that include current-limiting resistance R, diode D and single-chip microprocessor MCU, wherein:
One end of described current-limiting resistance R for connecting the positive pole of mesuring battary, the other end be connected to the positive input of described diode D, the outfan of described diode D is for connecting the negative pole of described mesuring battary;
Being provided with ADC in described single-chip microprocessor MCU, the Vin interface of described ADC is connected to the positive input of described diode D, Vref interface for connecting the positive pole of described mesuring battary。
2. the testing circuit of cell voltage according to claim 1, it is characterised in that described testing circuit also includes electric capacity of voltage regulation C, and described electric capacity of voltage regulation C is connected in parallel on the two ends of described diode D。
3. the testing circuit of cell voltage according to claim 1 and 2, it is characterised in that described diode D includes the silicon-based diode that forward voltage drop is 0.5-0.7V。
4. the testing circuit of cell voltage according to claim 1 and 2, it is characterised in that the resistance of described current-limiting resistance R is 100-500K。
5. a voltage detection method for cell voltage, utilizes the arbitrary described testing circuit of claim 1-4, it is characterised in that including:
By canonical reference voltage source, input normal voltage to the Vref interface end of described ADC;
According to described normal voltage, calculate the true forward voltage drop V of described diode0;
Mesuring battary is accessed described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary。
6. the voltage detection method of cell voltage according to claim 5, it is characterised in that described mesuring battary accesses described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary, including:
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC;
Precision figure place n according to described ADC, described forward voltage drop V0With described Vin digital quantity N, draw the actual voltage value of described mesuring battary, wherein, Vbat=(V0/N)*(2n-1)。
7. the voltage detection method of cell voltage according to claim 5, it is characterised in that described mesuring battary accesses described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary, including:
The reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end in the described ADC of corresponding acquisition;
According to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, set up the demarcation relation table that described Vin digital quantity is corresponding with described reference voltage;
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end output in described ADC1;
According to described Vin digital quantity N1With described demarcation relation table, utilize look-up interpolations to calculate the actual voltage value Vbat of described mesuring battary。
8. the voltage detection method of cell voltage according to claim 5, it is characterised in that described mesuring battary accesses described circuit to be detected, calculates the actual voltage value Vbat of described mesuring battary, including:
The reference voltage source with different reference voltage is accessed described circuit to be detected, the Vin digital quantity of Vin end output in the described ADC of corresponding acquisition;
According to different described reference voltages and the Vin digital quantity corresponding with described reference voltage, it is thus achieved that the characteristic curve that described reference voltage changes with described Vin digital quantity;
Mesuring battary is accessed described circuit to be detected, obtains the Vin digital quantity N of Vin end in described ADC2;
By described Vin digital quantity N2Substitute into described characteristic curve, calculate the actual voltage value Vbat of described mesuring battary。
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CN106771526A (en) * | 2017-01-19 | 2017-05-31 | 成都海川高科科技有限公司 | A kind of pressure bomb battery voltage detector |
CN106981166A (en) * | 2017-05-25 | 2017-07-25 | 欧阳培光 | A kind of network intelligence photoelectric smoke detecting alarm control system and its control method |
CN108957324A (en) * | 2017-05-18 | 2018-12-07 | 佛山市顺德区美的电热电器制造有限公司 | The detection device and method of electric cooking pot and wherein battery capacity |
CN109470913A (en) * | 2018-09-19 | 2019-03-15 | 东莞市正旭新能源设备科技有限公司 | A method of supply voltage is pushed away by reference to voltage is counter |
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CN116430249A (en) * | 2023-03-13 | 2023-07-14 | 深圳龙电华鑫控股集团股份有限公司 | Voltage detection method, modeling method of voltage detection model and electronic equipment |
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