CN105679879B - 一种提高太阳能电池效率的制冷涂层的制备方法 - Google Patents
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- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- 239000004411 aluminium Substances 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 5
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- 238000001338 self-assembly Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006056 electrooxidation reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
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- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
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- 239000002344 surface layer Substances 0.000 description 1
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Abstract
本发明涉及一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：包括以下步骤：将硅片表面进行清洗；将步骤(1)所得的硅片进行制绒；将步骤(2)所得的硅片制备多孔硅,多孔硅的孔径在0.5um‑10um，在硅片表面制作光子晶体制冷涂层；将步骤(3)所得的硅片上制作发射极、周边刻蚀、磷硅酸玻璃去除；将步骤(4)所得的硅片再依次进行沉淀氮化硅膜、高温退火、采用丝印正方面电极和背铝、烧结。其有益效果为：太阳能电池表面的多孔硅结构以及制冷涂层可有效降低太阳能电池的温度，提高工作状态下的发电效率。
Description
技术领域
本发明涉及太阳发电领域，具体涉及一种提高太阳能电池效率的制冷涂层的制备方法。
背景技术
随着工业发展以及人类活动的日趋活跃，人类对能源的消耗日趋增大，而地下非可再生资源日趋短缺，能源供需矛盾日益激化，能源问题已成为影响人类生存和发展的关键问题之一，与风力发电、海洋发电、生物智能发电等许多可再生能源相比，太阳能光伏发电具有清洁性、安全性、广泛性、无噪音、无污染、能量随处可得、无需消耗燃料、无机械传动部件、维护简单、可以无人值守、建设周期短、规模大小随意、并可与建筑相结合等诸多优点。太阳能电池是利用光生伏特效应将太阳能直接转化为电能的半导体器件，通过电池片间串联、封装、并联等形式组装成所需要的电压、电流和功率，目前广泛应用的是成本低廉发电效率表现好的晶体硅太阳能电池片。
晶体硅太阳能电池片组件在吸收太阳能发电的同时，也会产生热量，
温度对晶体硅太阳电池性能的影响：光伏组件温度较高时，工作效率下降，随着太阳能电池温度的增加，开路电压减小，在20-100℃范围，大约每升高1℃，每片电池的电压减小2mV；而光电流随温度的增加略有上升，大约每升高1℃每片电池的光电流增加千分之一，或0.03mA/℃*cm2；总的来说，温度升高太阳电池的功率下降，典型温度系数为-0.35％/℃，也就是说，如果太阳能电池温度每升高1℃，则功率减少0.35％。有效的降低工作状态下晶硅太阳能电池温度，是提高晶硅太阳能电池发电效率亟待解决的问题。
发明内容
为克服所述不足，本发明的目的在于提供一种提高太阳能电池效率的制冷涂层的制备方法，太阳能电池表面的多孔硅结构以及制冷涂层可有效降低太阳能电池的温度，提高工作状态下的发电效率。
本发明具有以下有益效果：一种提高太阳能电池效率的制冷涂料的制备方法，包括以下步骤：
(1)将硅片表面进行清洗；
(2)将步骤(1)所得的硅片进行制绒；
(3)将步骤(2)所得的硅片制备多孔硅,多孔硅的孔径在0.5um-10um，在硅片表面制作光子晶体制冷涂层；
(4)将步骤(3)所得的硅片上制作发射极、周边刻蚀、磷硅酸玻璃去除；
(5)将步骤(4)所得的硅片再依次进行沉淀氮化硅膜、高温退火、采用丝印正面电极和背铝、烧结。
进一步，步骤(1)至步骤(5)中的硅片设为P型掺杂单晶硅片。
进一步，步骤(3)中硅片制备多孔硅的结构采用电化学腐蚀法制备，全程由电脑程式自动控制电化学腐蚀平台，以硅片作为阳极，Pt作为阴极，腐蚀液为体积比为1:1的氢氟酸和酒精混合溶液，其中氢氟酸的浓度为25wt％-40wt％，阳极和阴极之间接通电流，电流密度为6mA/cm2-65mA/cm2，在温度-15℃－30℃，持续时间为0.1min-2min。
进一步，步骤(3)中硅片制备多孔硅的结构采用精密机械加工法制备。
进一步，步骤(3)中制备光子晶体制冷涂层采用垂直沉降自组装法将二氧化硅胶体微球制备成具有规则排布的三维光子晶体。
本发明的有益效果：在硅片表面形成的多孔硅实现较大的有效的中红外透过率，将电池片在工作过程中产生的热量能够有效的传出，同时在硅片表面的光子晶体制冷涂层，多孔硅的结构能够增大光子晶体制冷涂层的表面积，将太阳能发电过程中产生的热量以中红外线的方式辐射到周围空气中，起到降温的作用，有效提高太阳能电池的发电效率。
附图说明
图1为本发明的工艺流程图。
具体实施方式
现在结合附图对本发明作进一步详细的说明。
实施例1
根据图1所示的一种提高太阳能电池效率的制冷涂料的制备方法，包括以下步骤：
(1)将硅片表面进行清洗；
(2)将步骤(1)所得的硅片进行制绒；
(3)将步骤(2)所得的硅片制备多孔硅光子晶体结构；
(4)将步骤(3)所得的硅片上制作发射极、周边刻蚀、磷硅酸玻璃去除；
(5)将步骤(4)所得的硅片再依次进行沉淀氮化硅膜、高温退火、采用丝印正面电极和背铝、烧结。
进一步，步骤(1)至步骤(5)中的硅片设为P型掺杂单晶硅片。
进一步，步骤(3)中硅片制备多孔硅的结构采用电化学腐蚀法制备，全程由电脑程式自动控制电化学腐蚀平台，以硅片作为阳极，Pt作为阴极，腐蚀液为体积比为1:1的氢氟酸和酒精混合溶液，其中氢氟酸的浓度为25wt％-40wt％，阳极和阴极之间接通电流，电流密度为6mA/cm2-65mA/cm2，在温度-15℃－30℃，持续时间为0.1min-2min。
进一步，步骤(3)中制备光子晶体制冷涂层采用垂直沉降自组装法将二氧化硅胶体微球制备成具有规则排布的三维光子晶体。
实施例2
一种提高太阳能电池效率的制冷涂料的制备方法，包括以下步骤：
(1)将硅片表面进行清洗；
(2)将步骤(1)所得的硅片进行制绒；
(3)将步骤(2)所得的硅片制备多孔硅,多孔硅的孔径在0.5um-10um，在硅片表面制作光子晶体制冷涂层；
(4)将步骤(3)所得的硅片上制作发射极、周边刻蚀、磷硅酸玻璃去除；
(5)将步骤(4)所得的硅片再依次进行沉淀氮化硅膜、高温退火、采用丝印正面电极和背铝、烧结。
进一步，步骤(1)至步骤(5)中的硅片设为P型掺杂单晶硅片。
进一步，步骤(3)中硅片制备多孔硅的光子晶体结构采用精密机械加工法制备。
进一步，步骤(3)中制备光子晶体制冷涂层采用垂直沉降自组装法将二氧化硅胶体微球制备成具有规则排布的三维光子晶体。
本发明不局限于所述实施方式，任何人应得知在本发明的启示下作出的结构变化，凡是与本发明具有相同或相近的技术方案，均落入本发明的保护范围之内。
本发明未详细描述的技术、形状、构造部分均为公知技术。
Claims (5)
1.一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：包括以下步骤：
(1)将硅片表面进行清洗；
(2)将步骤(1)所得的硅片进行制绒；
(3)将步骤(2)所得的硅片制备多孔硅,多孔硅的孔径在0.5um-10um，在硅片的多孔硅表面制作光子晶体制冷涂层；
(4)将步骤(3)所得的硅片上制作发射极、周边刻蚀、磷硅酸玻璃去除；
(5)将步骤(4)所得的硅片再依次进行沉淀氮化硅膜、高温退火、采用丝印正面电极和背铝、烧结。
2.根据权利要求1所述的一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：步骤(1)至步骤(5)中的硅片设为P型掺杂单晶硅片。
3.根据权利要求1所述的一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：步骤(3)中硅片制备多孔硅的结构采用电化学腐蚀法制备，全程由电脑程式自动控制电化学腐蚀平台，以硅片作为阳极，Pt作为阴极，腐蚀液为体积比为1:1的氢氟酸和酒精混合溶液，其中氢氟酸的浓度为25wt％-40wt％，阳极和阴极之间接通电流，电流密度为6mA/cm2-65mA/cm2，在温度-15℃－30℃，持续时间为0.1min-2min。
4.根据权利要求1所述的一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：步骤(3)中硅片制备多孔硅的结构采用精密机械加工法制备。
5.根据权利要求1所述的一种提高太阳能电池效率的制冷涂料的制备方法，其特征在于：步骤(3)中制备光子晶体制冷涂层采用垂直沉降自组装法将二氧化硅胶体微球制备成具有规则排布的三维光子晶体。
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