CN105679864A - Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module - Google Patents
Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module Download PDFInfo
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- CN105679864A CN105679864A CN201610160295.8A CN201610160295A CN105679864A CN 105679864 A CN105679864 A CN 105679864A CN 201610160295 A CN201610160295 A CN 201610160295A CN 105679864 A CN105679864 A CN 105679864A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 107
- 239000010703 silicon Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 239000011574 phosphorus Substances 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 8
- 229920002472 Starch Polymers 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 235000019698 starch Nutrition 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000007581 slurry coating method Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000005215 recombination Methods 0.000 claims description 2
- 230000006798 recombination Effects 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract 4
- 210000004027 cell Anatomy 0.000 description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- -1 phosphorio Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell module integrated from a silicon cell and a chip-type backward diode. The solar cell module is formed by connecting dozens of integrated cell units in parallel or in parallel and series so as to substitute three independent reverse protection diodes originally used by the module, and each integrated cell unit is formed by connecting a conventional silicon solar cell and a chip-type backward protection diode in back-to-back manner by electrodes and electrodes. In the solar cell module, each cell unit comprises a solar cell p-type substrate, an n-type diffusion layer of the substrate, a diffusion layer electrode, a substrate electrode, a chip-type backward diode n-type substrate, a p-type diffusion layer, an n-type isolation region, a phosphorus impurity paste, an electrode of the p-type diffusion layer and an electrode of the chip-type backward diode n-type substrate, wherein the electrodes are in metal contact with the substrate electrode.
Description
Technical field
The present invention relates to field of renewable energy, particularly relate to a kind of solar module that shade is insensitive and be integrated with solar cell and the preparation method of reverse protection diode.
Background technology
Conventional reverse protection diode is power electronic devices, it is pressure height, and rectification characteristic is good, and forward current is big, generally forms with little semiconductor element complexed metal encapsulation, outer formation column or bulk. Owing to cost is high and cannot be integrated with solar cell piece in profile, 3 groups of the battery (about 60) of current each battery component point, mix 3 backward diodes through backboard, to protect battery in assembly. But, the low open-circuit voltage of solar cell needs to connect into assembly with the form of series connection, and therefore, assembly is extremely sensitive to shade and uneven light. In order to reduce shadow effect, people have employed the method (MPPT) of MPPT maximum power point tracking, i.e. direct current transformation+algorithm+chip controls technology. This technology from the power station level started, organize tandem, develop into current component level. The MPPT of component level is also optimizer, and each assembly is furnished with 3, by battery being cut half, dividing 3 string mixing connection in series-parallel, constant to maintain assembly output voltage.
The assembly connected into by battery integrated unit be then intelligent, shade is insensitive and assembly output be maximized, be also that MPPT maximum power point tracking maximizes (MPPT) acme of developing. Therefore in distributed power generation process, power generation loss can be reduced in power station, and can increase generating by increasing reflection light heterogeneous, thus helping power station owner's additional income at least 10%, reclaiming the power station cost time shortens dramatically. The present invention intends developing the solar module that a kind of every battery is integrated with diode reverse, this integrated be post chip silicon reverse protection diode at conventional solar cell shady face, the model of both substrates is contrary, and is connected by metal, as the power take-off mouth of battery; And another electrode of chip silicon reverse protection diode is connected with solar cell side to light electrode, as another power take-off mouth of battery. This technology is revolutionary, and after reduction cost is universal, its market is very big, and huge impetus all will be played by this in national or even global photovoltaic enterprise and market.
Summary of the invention
The voltage of monolithic battery output is low, and useful power is then high voltage and low current, for instance in civilian circuit, voltage is 220V and electric current < 10A, so photovoltaic module must improve the output voltage of assembly in the way of serial battery.
But, the mode of serial battery requires that each cell output current is consistent, namely uniform illumination under the premise that solar cell is identical in quality, if the illumination having a piece of battery is blocked, whole assembly will export with the low current of this battery, therefore, shade and the uneven output on photovoltaic module of light affect very big.
Chip silicon diode cost is low, it is possible to produces preparation on line at existing silicon solar cell, then is cut out, one of its cost two percentages that can be reduced to existing silicon solar cell. Chip silicon reverse protection diode is connected with silicon solar cell shady face metal; do not block sunlight, do not affect solar cell generating, do not affect silicon solar cell component package; mate on thickness with existing silicon solar cell, it is possible to the silicon solar cell assembly of composition best power output. By adding one or multi-channel transoid doping coil at chip silicon reverse protection diode doped layer periphery, and consistent with substrate model, it is possible to block the electric leakage that pn-junction edge damage brings, improve parallel resistance, reduce dark current.
Best mode is equipped with a backward diode to exactly each battery and protects, then is equipped with the photovoltaic component system of series connection. Therefore, the integrated solar module of the silion cell that dark current is little, rectification characteristic is good and chip silicon backward diode is the target of the present invention.
For reaching above-mentioned purpose, the technical scheme is that and be achieved in that:
The invention discloses the solar module that a kind of silion cell is integrated with chip backward diode, it is characterised in that this solar module is made up of many (tens to up to a hundred) individual integrated battery unit mixing connection in series-parallel. So-called integrated battery unit, it is characterised in that connected and composed with chip silicon reverse protection diode by conventional silicon solar cell, it is possible to be that back connects, as shown in Figure 1-2. Can also be connect side by side. And mix connection in series-parallel, it is characterised in that all integrated battery unit arranged in series in assembly, or battery is cut half, it is arranged in parallel with two tandems. Whole assembly is insensitive to shade, it is possible to increase generating by uneven reflection light.
One chip silicon reverse protection diode of attachment on conventional silicon solar cell shady face. When wherein said conventional silicon solar cell is to be substrate 1 with p-type silicon, launch extremely n-type doped layer 2; then chip silicon reverse protection diode is by n-type silicon substrate 5, p-type doped layer 6; n-type isolation area 7; phosphorio metal 8; the metal electrode 9 contacted with p-type silicon, the metal electrode 10 contacted with n-type silicon forms, referring to Fig. 1; electrode 9 forms outfan B after being connected with electrode 3, and electrode 10 forms another output terminals A with electrode 4 after being connected.
Described silicon doped region, there are 1 to 5 n-type isolation area 7 and phosphorus-based impurity slurry 8 in its edge, to prevent diode to be subject to the impact of edge current leakage.
One chip silicon reverse protection diode of attachment on conventional silicon solar cell shady face. When wherein said conventional silicon solar cell is to be substrate 11 with n-type silicon, launch extremely p-type doped layer 12; then chip silicon reverse protection diode is by p-type silicon substrate 15, n-type doped layer 16; p-type isolation region 17; aluminium based metal 18; the metal electrode 19 contacted with n-type silicon; the metal electrode 20 contacted with p-type silicon forms, referring to Fig. 2.Electrode 19 forms outfan E after being connected with electrode 13, and electrode 20 forms another outfan F with electrode 14 after being connected.
Described silicon doped region, there are 1 to 5 p-type isolation region 17 and aluminium based metal 18 in its edge, to prevent diode to be subject to the impact of edge current leakage.
The area scales of described chip silicon reverse protection diode is much larger than thickness, it is possible to being round, it is also possible to be square, it is also possible to be rectangle, planar dimension (diameter) is between 6-100 millimeter, and its thickness is within 6-200 micron.
Described chip silicon reverse protection diode, it is possible to be chip monocrystal silicon reverse protection diode, it is also possible to be chip polysilicon reverse protection diode.
Described crystalline silicon, two surface has SiO2Or the protection of SiN thin film passivation, to reduce surface recombination.
The preparation method of the solar module that a kind of silion cell is integrated with chip silicon backward diode, comprises the steps:
1) adopt silicon as substrate (5), it is adulterated, form pn-junction, reduce series resistance by deepening the junction depth of pn-junction;
2) thermal oxidation technique is adopted to carry out SiO to silicon chip is two-sided2Passivation, or adopt plasma reinforced chemical vapour deposition (PECVD) to carry out SiO to silicon is two-sided2Or SiN passivation;
3) adopt laser to the two-sided partially perforation of silicon chip, to remove portion of the passivating layer;
4) adopting screen printing technique that silicon chip one side carries out metal paste coating, toasted curing metal slurry, wherein p-type area A1 starches, and n-type area Ag starches;
5) adopting screen printing technique that silicon chip one side isolation area carries out impurity slurry coating, toasted curing metal slurry, wherein slurry is phosphorus slurry or aluminium paste;
6) adopting screen printing technique that silicon chip another side carries out metal paste coating, sintered technique prepares Ohm contact electrode and isolation area isolation, and wherein slurry is phosphorus slurry or aluminium paste;
7) the silicon chip segmentation adopting laser cutting technique to prepare, forms little chip silicon reverse protection diode;
8) chip silicon reverse protection diode is affixed on conventional crystal silicon solar battery shady face, forms integrated battery unit;
9) integrated battery unit is laid on the glass plate being covered with EVA, by integrated battery element solder line, rear EVA and backboard compacting, forms solar module.
The method have the advantages that
1, the present invention is utilized, it is possible to physically making reverse protection diode and silicon solar cell sheet compatibility on thickness, be namely attached to the back side of silicon solar cell, do not block sunlight, be not take up solar cell light absorption area, do not affect solar cell power generation operation; Under equal quality premise, it is substantially reduced the cost of reverse protection diode, is equipped with a backward diode to each battery and protects, then be equipped with the photovoltaic component system of series connection, namely keep the mode of serial battery, eliminate the interference of shade simultaneously.
2, the present invention is utilized, it is possible to by increasing the uneven luminous fluxes such as reflection, improve the generated energy of battery component, thus shortening the period of cost recovery in power station.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 (a) is the sectional view of a kind of integrated battery unit;
The equivalent circuit diagram that Fig. 1 (b) is Fig. 1 (a);
Fig. 2 (a) is the sectional view of a kind of integrated battery unit;
The equivalent circuit diagram that Fig. 2 (b) is Fig. 2 (a).
Detailed description of the invention
Referring to Fig. 1, wherein 1 is p-type crystalline silicon substrate, and 2 is n-type doped layer, and 3 is the metal electrode contacted with n-type silicon, 4 is the metal electrode contacted with p-type silicon, 5 is n-type crystalline silicon substrate, and 6 is p-type doped layer, and 7 is n-type isolation area, 8 is phosphorio metal, 9 is the metal electrode contacted with p-type silicon, and 10 is the metal electrode contacted with n-type silicon, and A and B is output port.The equivalent circuit diagram that Fig. 1 (b) is Fig. 1 (a), C is solar cell DC source, and D is chip silicon reverse protection diode, and A and B is output port.
Referring to sectional view for a kind of integrated battery unit of Fig. 2, Fig. 2 (a), wherein 11 is n-type crystalline silicon substrate, 12 is p-type doped layer, 13 is the metal electrode contacted with p-type silicon, and 14 is the metal electrode contacted with p-type silicon, and 15 is p-type crystalline silicon substrate, 16 is n-type doped layer, 17 is p-type isolation region, and 18 is aluminium based metal, and 19 is the metal electrode contacted with n-type silicon, 20 is the metal electrode contacted with p-type silicon, and E and F is output port. The equivalent circuit diagram that Fig. 2 (b) is Fig. 2 (a), G is solar cell DC source, and H is chip silicon reverse protection diode, and E and F is output port.
In the present invention, the preparation method of the solar module that silion cell is integrated with chip backward diode comprises the steps:
1) adopt silicon as substrate, it is adulterated, form pn-junction, reduce series resistance by deepening the junction depth of pn-junction.
2) thermal oxidation technique is adopted to carry out SiO to silicon chip is two-sided2Passivation, or adopt plasma reinforced chemical vapour deposition (PECVD) to carry out SiO to silicon is two-sided2Or SiN passivation;
3) adopt laser to its two-sided partially perforation, to remove portion of the passivating layer;
4) adopting screen printing technique that silicon chip one side is carried out metal paste coating, solidify after toasted, wherein p-type area Al starches, and n-type area Ag starches;
5) adopt screen printing technique that silicon chip one side isolation area is carried out impurity slurry coating, toasted solidified forming; , wherein slurry is phosphorus slurry or aluminium paste;
6) adopting screen printing technique that silicon chip another side carries out metal paste coating, sintered technique prepares Ohm contact electrode 3,4,9,10, and the impurity slurry simultaneously solidified expands and forms isolation into silicon top layer, and wherein slurry is phosphorus slurry or aluminium paste;
7) adopt laser cutting technique to protect diode to split silicon chip, form little chip silicon reverse protection diode;
8) chip silicon reverse protection diode is affixed on conventional crystal silicon solar battery shady face, forms integrated battery unit;
9) integrated battery unit is laid on the glass plate being covered with EVA, by integrated battery element solder line, rear EVA and backboard compacting, forms solar module.
Particular embodiments described above; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only specific embodiments of the invention; it is not limited to the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (8)
1. the solar module that silion cell is integrated with chip silicon backward diode, is made up of multiple integrated battery unit mixing connection in series-parallel, all integrated battery unit arranged in series in mixing connection in series-parallel finger assembly, or battery is cut half, arranges with multi-series and parallel townhouse, it is characterized in that, so-called integrated battery unit is made up of one chip silicon reverse protection diode of attachment on conventional silicon solar cell shady face, wherein chip silicon reverse protection diode is by n-type silicon substrate (5), p-type doped layer (6), n-type isolation area (7), phosphorus impurities slurry (8), the metal electrode (9) contacted with p-type silicon, metal electrode (10) composition contacted with n-type silicon, wherein electrode (9) forms outfan (B) after being connected with electrode (3), electrode (10) forms another outfan (A) with electrode (4) after being connected.
2. the solar module that silion cell as claimed in claim 1 is integrated with chip silicon backward diode, it is characterized in that, wherein said p-type doped layer (6), there are 1 to 5 n-type isolation area (7) and phosphorus impurities slurry (8) in its edge, to prevent diode to be subject to the impact of edge current leakage.
3. the solar module that silion cell is integrated with chip silicon backward diode, is made up of multiple integrated battery unit mixing connection in series-parallel, all integrated battery unit arranged in series in mixing connection in series-parallel finger assembly, or battery is cut half, arranges with multi-series and parallel townhouse, it is characterized in that, so-called integrated battery unit is made up of one chip silicon reverse protection diode of attachment on conventional n-type silicon solar cell shady face, wherein chip silicon reverse protection diode is by p-type silicon substrate (15), n-type doped layer (16), p-type isolation region (17), boron impurity slurry (18), the metal electrode (19) contacted with n-type silicon, metal electrode (20) composition contacted with p-type silicon, wherein electrode (19) forms outfan (E) after being connected with electrode (13), electrode (20) forms another outfan (F) with electrode (14) after being connected.
4. the solar module that silion cell as claimed in claim 3 is integrated with chip silicon backward diode, it is characterized in that, wherein said p-type doped layer (16), there are 1 to 5 n-type isolation area (17) and boron impurity slurry (18) in its edge, to prevent diode to be subject to the impact of edge current leakage.
5. the solar module that the silion cell as described in any one of claim 2 and 4 is integrated with chip silicon backward diode, it is characterized in that, the junction depth of described chip silicon reverse protection diode is between 0.5-30 micron, the area scales of described chip silicon reverse protection diode, more than thickness, is round or square or rectangle; Planar dimension or diameter are between 6-100 millimeter, and its thickness is between 6-200 micron.
6. the solar module that the silion cell as described in any one of claim 2 and 4 is integrated with chip silicon backward diode; it is characterized in that, described chip silicon reverse protection diode is chip monocrystal silicon reverse protection diode or chip polysilicon reverse protection diode.
7. the solar module that the silion cell according to any one of claim 2 and 4 is integrated with chip silicon backward diode, it is characterised in that two surfaces of described chip silicon reverse protection diode have the protection of SiO2 or SiN thin film passivation, to reduce surface recombination.
8. the preparation method of the solar module that the silion cell as described in any one of claim 1-7 is integrated with chip silicon backward diode, comprises the steps:
1) adopt silicon as substrate (5), it is adulterated, form pn-junction, reduce series resistance by deepening the junction depth of pn-junction;
2) thermal oxidation technique is adopted to carry out SiO to silicon chip is two-sided2Passivation, or adopt plasma reinforced chemical vapour deposition (PECVD) to carry out SiO to silicon is two-sided2Or SiN passivation;
3) adopt laser to the two-sided partially perforation of silicon chip, to remove portion of the passivating layer;
4) adopting screen printing technique that silicon chip one side carries out metal paste coating, toasted curing metal slurry, wherein p-type area Al starches, and n-type area Ag starches;
5) adopting screen printing technique that silicon chip one side isolation area carries out impurity slurry coating, toasted curing metal slurry, wherein slurry is phosphorus slurry or aluminium paste;
6) adopting screen printing technique that silicon chip another side carries out metal paste coating, sintered technique prepares Ohm contact electrode and isolation area isolation, and wherein slurry is phosphorus slurry or aluminium paste;
7) the silicon chip segmentation adopting laser cutting technique to prepare, forms little chip silicon reverse protection diode;
8) chip silicon reverse protection diode is affixed on conventional crystal silicon solar battery shady face, forms integrated battery unit;
9) integrated battery unit is laid on the glass plate being covered with EVA, by integrated battery element solder line, rear EVA and backboard compacting, forms solar module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610160295.8A CN105679864A (en) | 2016-03-21 | 2016-03-21 | Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610160295.8A CN105679864A (en) | 2016-03-21 | 2016-03-21 | Solar cell module integrated from silicon cell and chip-type backward diode and production method of solar cell module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825337A (en) * | 2019-11-21 | 2021-05-21 | 江苏宜兴德融科技有限公司 | Flexible solar cell array |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112825337A (en) * | 2019-11-21 | 2021-05-21 | 江苏宜兴德融科技有限公司 | Flexible solar cell array |
| CN112825337B (en) * | 2019-11-21 | 2023-07-21 | 江苏宜兴德融科技有限公司 | Flexible solar cell array |
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