CN105679721B - The microchannel fluid radiator passed through for the leakage of anti-heat radiation working medium and chip conducting wire - Google Patents
The microchannel fluid radiator passed through for the leakage of anti-heat radiation working medium and chip conducting wire Download PDFInfo
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- CN105679721B CN105679721B CN201610034123.6A CN201610034123A CN105679721B CN 105679721 B CN105679721 B CN 105679721B CN 201610034123 A CN201610034123 A CN 201610034123A CN 105679721 B CN105679721 B CN 105679721B
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Abstract
The present invention provides a kind of microchannel fluid radiators passed through for the leakage of anti-heat radiation working medium and chip conducting wire, including silicon base part, metal flow passage structure division and heat radiation working medium part, wherein: the production of silicon base portion of upper surface has silicon base chip, at silicon base part back, production has silicon substrate through-hole and bulge-structure, production has metal throuth hole, groove structure, metal heat-conducting column, working medium entrance on metal flow passage structure division；Bulge-structure is embedded in groove structure and bonds together to form closure runner cavity；Heat radiation working medium is partially disposed in the closure runner cavity；Working medium entrance is set to metal flow passage structure division rear and front end inside outer wall center；Metal heat-conducting column and silicon base chip back contact, for conducting the heat of silicon base chip.The present invention solves microchannel fluid heat radiation working medium leakage problem, chip back lead difficulty, while simple process, and heat dissipation effect is excellent, matches with the processing technology of silicon base chip, solves the heat dissipation problem of high-power chip.
Description
Technical field
The present invention relates to chip cooling technical fields, and in particular, to one kind is led for the leakage of anti-heat radiation working medium and chip
The microchannel fluid radiator that line passes through.
Technical background
With the development of chip process technique and the development of three-dimensional packaging technology, the computing capability and power of single-chip
It is greatly improved, and the size of chip is smaller and smaller.The following chip overheating problem becomes puzzlement chip and stablizes
The key problem of property.And the operating power of existing high-power chip has reached 200-400W/cm2, in the near future will
More than 1000W/cm2, the heat dissipation of chip will face very big challenge, and some researches show that chip temperature is every to promote 10 DEG C, stablizes
Property will reduce by 50%.
Chip radiator is based on the above reason and is born.Common radiating mode has passive heat dissipation, forced air pair
Flow heat dissipation, fluid radiator and phase-change heat sink etc..Micro-dimension based on chip, microchannel fluid heat dissipation is considered as most having
The technological means of future solution high-power chip heat dissipation problem.
Microchannel fluid radiator is earliest by D.B.Tuckerman and R.F.W.Pease et al. in IEEE Electron
Device Letters (1981) Vol.Edl-2, article " the High-Performance Heat Sinking fo that NO.5 is delivered
VLSI " in propose, the structure of design is in chip base to etch runner, and be packaged with lower cover plate.But silicon conduct
Runner, for thermal conductivity for metal, gap still obviously, thus constrains the development of heat dissipation performance.It is used
Flat panel enclosure, there are problems that being easy leakage working medium, and and unresolved chip lead arrangement problem.
Huawei Zhang and Liubao Chen et al. is in International Journal of Heat and
Article " the Experimental study on heat transfer that Mass Transfer 56 (2013) 172-180 is delivered
Performance of lotus-type porous copper heat sink " propose copper with lotus-shaped flower hole shape
Microfluid radiator is made, as the metal heat sink of high heat conductance, opposite silicon heat dissipation performance is enhanced, still
Hole shape is higher to the purity requirement of heat radiation working medium since its structure limits, and flow restriction is higher, therefore seal operation condition is wanted
Ask higher.
Junhong Zhao and Yan Wang et al. is in Journal of Micromechanices and
Article " Design, the fabrication and that Microengineering 24 (2014) 115013 (9pp) is delivered
measurement of a microchannel heat sink with a pin-fin array and optimal
Inlet position for alleviating the hot spot effect " it proposes and uses metallic copper as heat dissipation base
Bottom, and set fluid channel and heating column based on metallic copper.Its excellent heat conductivity performance for successfully combining copper and by micro-
Runner increases the ability that fluid passes through, and makes it possible to add the metal nanoparticle of high heat conductance also in working medium.But due to
The planar package that upper cover plate uses, micropore problem, be easy to cause leakage in the case where High Pressure Difference caused by bonding deforms
A possibility that working medium problem.And the design does not refer to the lead arrangement problem of chip.
Summary of the invention
For the defects in the prior art, the object of the present invention is to provide one kind leads comprising the leakage of anti-heat radiation working medium and chip
The microchannel fluid radiator that line passes through, solves the above problems.
The present invention is achieved through the following technical solutions:
A kind of microchannel fluid radiator passed through for the leakage of anti-heat radiation working medium and chip conducting wire, comprising: silicon base, gold
Belong to flow passage structure and heat radiation working medium, in which: surface production has silicon base chip on a silicon substrate, production has at the back of silicon base
" returning " font bulge-structure and silicon substrate through-hole comprising annular protrusion structure；Making in metal flow passage structure has " returning " font recessed
Slot structure, the metal throuth hole comprising circular groove structure, metal heat-conducting column, working medium entrances, sender property outlet；" returning " font protrusion knot
Structure is embedded in " returning " font groove structure, and the runner cavity of closure is formed by bonding technology；Heat radiation working medium is placed in closure
Runner cavity；Working medium entrances and sender property outlet are respectively arranged at the both ends inside outer wall center of metal flow passage structure；Include
The silicon substrate through-hole of annular protrusion structure is nested with the metal throuth hole comprising circular groove structure, for drawing the work of silicon base chip
Conducting wire；Metal heat-conducting column is directly contacted with the back of silicon base chip, and the heat that silicon base chip generates when working passes through metal heat-conducting
Column and the heat radiation working medium for flowing through metal flow passage structure are taken out of, to guarantee the constant of operating temperature.
Preferably, the back of the silicon base forms the silicon substrate containing annular protrusion structure by RIE etching technics and leads to
Hole and " returning " font bulge-structure；The metal flow passage structure forms metal fever guide post by MEMS technology, containing annular
The metal throuth hole of groove structure and " returning " font groove structure；Wherein: " returning " font bulge-structure and " returning " font groove knot
The position of structure is corresponding；The position pair of silicon substrate through-hole containing annular protrusion structure and the metal throuth hole containing circular groove structure
It answers.
It is highly preferred that the silicon substrate through-hole containing annular protrusion structure and the metal throuth hole containing circular groove structure
By bonding together to form chip wire channel, the active conductors of silicon base chip are guided by chip wire channel to the back of radiator
Portion, in order to the integration packaging of silicon base chip.
It is highly preferred that the metal throuth hole containing circular groove structure, first passes through MEMS technology and forms solid metal
Then cylindrical structure forms through-hole structure by machining or laser boring.
Preferably, the shape of the metal heat-conducting column is ellipsoid, or just body with cord structure or rectangular parallelepiped structure, or just
Cube structure；The arrangement of the metal heat-conducting column is array or staggered array type, in order to the conduction of silicon base chip heat
And heat radiation working medium is evenly dispersed.
Preferably, silicon substrate core is convenient in the ipsilateral extraction of the active conductors of the working medium entrances, sender property outlet and silicon base chip
The integral packaging of piece and radiator.
It is highly preferred that the working medium entrances, sender property outlet carry out the importing of heat radiation working medium by tube of metal,drainage and lead
Out.
Preferably, the heat radiation working medium is for deionized water or containing the aqueous solution of nano-metal particle or other thermal conductivities
The solution outstanding higher than the thermal conductivity of 293K deionised water (0.599W/m.K).
Preferably, the material of the metal flow passage structure is one or more of copper, iron, silver-colored aluminium, zinc metal.
Preferably, the metal flow passage structure runs through entire radiator.
The present invention by bumps agrees with structure, and that metal flow passage structure and silicon base chip Direct Bonding formed closed performance is good
Good runner cavity, the entrance by being placed in metallic micro channel introduce and export respectively heat radiation working medium and take away silicon base chip generation
Heat achieve the purpose that conduct that heat, be uniformly dispersed heat radiation working medium while by metal heat-conducting column.Meanwhile being designed at metal
The conducting wire of chip can be directed to the back of radiator by the metal via structure in microchannel, facilitate silicon base chip to reach
The purpose of encapsulation.
Compared with prior art, the invention has the following advantages:
Compared with existing radiator sealing structure and chip wiring compatibility, the anti-working medium of radiator of the present invention
Leakage ability is prominent, has and chip conducting wire is led to radiator back consequently facilitating chip front side encapsulates, heat-sinking capability is very excellent
Show, while manufacture craft is relatively easy, it is relatively high with the processing technology matching degree of chip.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is the whole 3 D stereo schematic diagram of one embodiment of the invention；
Fig. 2 is the integrated artistic flow chart of one embodiment of the invention；
Fig. 3 is the metal flow passage structure top view of one embodiment of the invention；
Fig. 4 be one embodiment of the invention metal flow passage structure along metal throuth hole sectional view；
Fig. 5 be one embodiment of the invention metal flow passage structure along working medium entrances sectional view；
Fig. 6 is the silicon base chip back side top view of one embodiment of the invention；
Fig. 7 is the silicon base chip of one embodiment of the invention along conducting wire silicon substrate through hole sectional view；
When Fig. 8 is packaged for the silicon base chip and metal flow passage structure of one embodiment of the invention, " returning " font protrusion knot
Sectional view at the encapsulation of structure and " returning " font groove structure；
When Fig. 9 is packaged for the silicon base chip and metal flow passage structure of one embodiment of the invention, contain annular protrusion knot
The silicon substrate through-hole of structure and the sectional view of the metal throuth hole containing circular groove structure；
In figure: silicon base chip 1, silicon substrate through-hole 2, " returning " font bulge-structure 3, metal throuth hole 4, metal heat-conducting column 5, working medium
Entrance 6, sender property outlet 7, " returning " font groove structure 8, silicon base 9, metal flow passage structure 10.
Specific embodiment
It elaborates with reference to the accompanying drawing to the embodiment of the present invention.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
As shown in Figure 1, a kind of microchannel fluid radiator passed through for the leakage of anti-heat radiation working medium and chip conducting wire, packet
It includes: silicon base chip 1, silicon substrate through-hole 2, " returning " font bulge-structure 3, metal throuth hole 4, metal heat-conducting column 5, working medium entrances 6, working medium
Outlet 7, " returning " font groove structure 8, silicon base 9, metal flow passage structure 10 and heat radiation working medium, in which:
Silicon substrate through-hole 2 is located at 9 left and right sides middle position of silicon base, and there is annular projection structure at back；Metal throuth hole 4
In 10 left and right sides middle position of metal flow passage structure, annular recess structure is arranged at top；Silicon substrate containing annular protrusion structure
Through-hole 2 and the position of the metal throuth hole 4 containing circular groove structure are nested in correspondence with each other, the active conductors difference of silicon base chip 1
The back of radiator is led to across silicon substrate through-hole 2 and metal throuth hole 4；9 upper surface of silicon base silicon is produced by making technology
The back side of base chip 1, silicon base 9 processes " returning " font bulge-structure 3 and the silicon containing annular protrusion structure by technique
Base through-hole 2；There is " returning " font groove structure 8 in metal flow passage structure 10, it is recessed that " returning " font bulge-structure 3 is embedded in " returning " font
Slot structure 8 to realize being connected and fixed for silicon base chip 1 and metal flow passage structure 10, and passes through the stream that bonding technology forms closure
Road cavity；In the closure runner cavity that heat radiation working medium is placed in silicon base chip 1 and metal flow passage structure 10 is formed；6 He of working medium entrances
Sender property outlet 7 is respectively arranged at the rear and front end inside outer wall center of metal flow passage structure 10, for leading for heat radiation working medium
Enter and exports；Metal heat-conducting column 5 is additionally provided in metal flow passage structure 10, the back of silicon base chip 1 and metal heat-conducting column 5 are direct
Contact, the heat that silicon base chip 1 generates when working pass through metal heat-conducting column 5 and flow through the heat radiation working medium of metal flow passage structure 10
It takes out of, to guarantee the constant of operating temperature.
As shown in Fig. 2, in one embodiment, the integral processing process of radiator is as follows:
Step 1, in the silicon wafer of 10mm*10mm*0.9mm, (silicon base chip and silicon base are all that silicon wafer is process: top
It is divided into silicon base chip, processes later entirety as silicon base) on, in center, produced by chip making technology
The silicon base chip 1 of 6mm*6mm*0.2mm thickness (in such as Fig. 2 shown in (a)).
Step 2, the back side spin coating exposure mask in silicon wafer, and dissolve by litho pattern the shape of silicon substrate through-hole 2, with RIE into
Row etching etches silicon substrate through-hole 2 (in such as Fig. 2 shown in (b)).
Step 3, removal step 2 mask structure, and " returning " word is dissolved in ipsilateral spin coating exposure mask again, and by litho pattern
The annular protrusion structure of shape bulge-structure 3 and silicon substrate through-hole 2, is performed etching with RIE, etching depth 0.4mm, to be formed
The annular protrusion structure of silicon substrate through-hole 2 (in such as Fig. 2 shown in (c)).
Step 4, removal step 3 mask structure, and Cr/Cu seed layer is sputtered at the back of silicon wafer, and plate one layer of 20um
Sn layer, 9 part of silicon base of radiator completes (in such as Fig. 2 (d) shown in).
Step 5 (is in addition to take a piece of silicon wafer here, is carried out by MEMS technology in the silicon wafer of 0.5mm thickness as silicon base
The production of metal flow passage structure) on, spin coating 0.5mm thickness su-8 glue, and by photoetching, development, graphically, in patterned su-8
Cr/Cu seed layer is sputtered on glue (in such as Fig. 2 shown in (e)).
Step 6 passes through MEMS high-aspect-ratio electroplating technology, has the photoetching glue surface of seed layer to power in sputtering and plates out Cu matter
Metal flow passage structure 10 (in such as Fig. 2 shown in (f)).
Silicon base used in step 7, strip step 5 and su-8 glue (in such as Fig. 2 shown in (g)).
Step 8 forms corresponding 4 ring of metal throuth hole in 4 position of metal throuth hole by machining or laser boring
Connected in star structure (in such as Fig. 2 shown in (h)).
1-4 is walked the metal that the silicon base 9 (shown in (d) in such as Fig. 2) that processing is formed is formed with 5-8 step processing by step 9
Runner section 10 (shown in (h) in such as Fig. 2) is assembled, and is bonded by high temperature, forms complete closed cavity structure (such as
In Fig. 2 shown in (i)).
As shown in figure 3, for 10 schematic diagram of metal flow passage structure in an embodiment, the metal flow passage structure 10 is preferably
Copper, including but not limited to other thermal conductivities excellent metal, such as silver, iron, nickel etc..Gold in the metal flow passage structure 10
Belong to heating column 5, preferably ellipsoid, including but not limited to other hot propertys and the good cylindrical body of flow resistance performance, cuboid,
Square, just profound body etc..
In the present embodiment, " returning " font groove structure for closed cavity is provided in the metal flow passage structure 10
8, for passing through the metal throuth hole 4 and working medium entrances 6, sender property outlet 7 of the active conductors of silicon base chip 1；Wherein:
The working medium entrances 6, sender property outlet 7 form through-hole structure by machining or laser boring, for outer
Connect diversion pipe.
As shown in figure 4, in one embodiment, the metal flow passage structure 10 is formed by plating.The metal is logical
Hole 4 by metal flow passage structure 10 be machined or laser boring formed.The arrangement of the metal heat-conducting column 5 is battle array
Column or staggered array type, in order to 1 heat of silicon base chip conduction and heat radiation working medium it is evenly dispersed.
As shown in figure 5, in one embodiment, the sectional view at the working medium entrances 6 along metal flow passage structure 10, figure
Described in working medium entrances 6 be set to the front end inside outer wall center of metal flow passage structure 10.The sender property outlet 7 is set
It is placed in the rear end inside outer wall center (not still further Detailed description of the invention) of metal flow passage structure 10.
As shown in fig. 6, in one embodiment, the silicon base chip 1 is completed by chip making technology.Described
9 back side of silicon base etches to form the silicon substrate through-hole 2 containing annular protrusion structure and " returning " font bulge-structure 3 by RIE.
As shown in fig. 7, in one embodiment, the silicon substrate containing annular protrusion structure along 9 back of silicon base is logical
Sectional view at hole 2, the silicon substrate through-hole 2 containing annular protrusion structure are located at intermediate at left and right sides of the back of silicon base 9
Position.
As shown in Figure 8, Figure 9, respectively described " returning " font bulge-structure 3 and " returning " font groove structure 8, Yi Jihan
There is the structure silicon-based through-hole 2 of annular protrusion to form enclosed construction by bonding technology with the metal throuth hole 4 containing circular groove structure,
To achieve the purpose that prevent leak.
It by the way that in one embodiment, the heat radiation working medium is preferably deionized water, but also may include containing nano metal
The aqueous solution of particle or the preferable solution of other thermal conductivities.The heat radiation working medium is introduced working medium through diversion pipe and is entered by water pump
Mouth 6, flows through metal flow passage structure 10, is finally discharged from sender property outlet 7.Through supercooling, filtering, the closing chamber of heat dissipation is reentered
Body.Most of heat that the work of silicon base chip 1 generates to metal heat-conducting column 5 and is dissipated by the back heat transfer of silicon base chip 1
In hot working fluid, and the heat radiation working medium through flowing through is taken out of, is moved in circles.Metal heat-conducting column 5 has heat conduction and Homogeneouslly-radiating
The effect of working medium heat distribution, to improve heat dissipation effect.
As a preferred embodiment, each component part of the radiator uses following size:
The size of silicon base 1 is 10mm*10mm*0.9mm；
Circle hole radius is 0.1mm in the annular of silicon substrate through-hole 2 containing circular groove structure, the radius of circular outer is
0.2mm；
The convex portion height of " returning " font bulge-structure 3 is 0.4mm, width 0.15mm；
Circle hole radius is 0.22mm in the annular of metal throuth hole 4 containing annular protrusion structure, and the radius of circular outer is
0.4mm；
The height of ellipsoid metal heat-conducting column 5 is 0.5mm, major radius 0.282mm, short radius 0.0705mm；
Circular working medium entrances 6, sender property outlet 7 radius be 0.2mm；
The groove cup depth of " returning " font groove structure 8 is 0.5mm, and the width of concave face is 0.17mm；
The size of metal flow passage structure 10 is 10mm*10mm*1mm.
By emulation, heat radiation working medium is deionized water, 6 flow of working medium entrances is 90ml/min, the power of silicon base chip 1
For 240W/cm2In the case where, 1 hot face temperature 342K of silicon base chip；It is deionized water, work in heat radiation working medium through overtesting
6 flow of matter entrance is 90ml/min, and 1 power of silicon base chip is 243W/cm2In the case where, 1 hot face temperature of silicon base chip is
338K.In test, flow is under 210ml/min, and working medium entrances 6,7 pressure difference of sender property outlet are not occur any under 0.21Mpa
Heat radiation working medium leakage situation.By emulation and verification experimental verification, actual demand is complied fully with.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (11)
1. a kind of microchannel fluid radiator passed through for the leakage of anti-heat radiation working medium and chip conducting wire characterized by comprising
Silicon base, metal flow passage structure and heat radiation working medium, in which: surface production on a silicon substrate has silicon base chip, in silicon base
Back production has " returning " font bulge-structure and the silicon substrate through-hole comprising annular protrusion structure；Making in metal flow passage structure has
" returning " font groove structure, the metal throuth hole comprising circular groove structure, metal heat-conducting column, working medium entrances and sender property outlet；
" returning " font bulge-structure is embedded in " returning " font groove structure, and the runner cavity of closure is formed by bonding technology；Heat dissipation
Working medium is placed in the flow passage chamber body of closure；Working medium entrances and sender property outlet are respectively arranged in the both ends outer wall of metal flow passage structure
Side center；Silicon substrate through-hole comprising annular protrusion structure is nested with the metal throuth hole comprising circular groove structure, for drawing
The active conductors of silicon base chip out；Metal heat-conducting column is directly contacted with the back of silicon base chip, what silicon base chip generated when working
Heat is by metal heat-conducting column and flows through the heat radiation working medium of metal flow passage structure and takes out of, to guarantee the constant of operating temperature.
2. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 1
Device, which is characterized in that the back of the silicon base forms the silicon substrate through-hole containing annular protrusion structure by RIE etching technics
And " returning " font bulge-structure；The metal flow passage structure forms metal fever guide post by MEMS technology, containing annular recessed
The metal throuth hole of slot structure and " returning " font groove structure；Wherein: " returning " font bulge-structure and " returning " font groove structure
Position it is corresponding；Silicon substrate through-hole containing annular protrusion structure is corresponding with the position of the metal throuth hole containing circular groove structure.
3. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 2
Device, which is characterized in that the silicon substrate through-hole containing annular protrusion structure and the metal throuth hole containing circular groove structure are logical
It crosses and bonds together to form chip wire channel, the active conductors of silicon base chip are guided by chip wire channel to the back of radiator,
In order to the integration packaging of silicon base chip.
4. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 2
Device, which is characterized in that the metal throuth hole containing circular groove structure first passes through MEMS technology and forms solid metal cylinder
Then structure forms through-hole structure by machining or laser boring.
5. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 1
Device, which is characterized in that the shape of the metal heat-conducting column is ellipsoid, or positive body with cord structure or rectangular parallelepiped structure, or square
Body structure；The arrangement of the metal heat-conducting column is array, in order to the conduction and heat radiation working medium of silicon base chip heat
It is evenly dispersed.
6. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 5
Device, which is characterized in that the arrangement of the metal heat-conducting column is staggered array type.
7. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 1
Device, which is characterized in that silicon substrate core is convenient in the ipsilateral extraction of active conductors of working medium entrances, the sender property outlet and silicon base chip
The integral packaging of piece and radiator.
8. a kind of microchannel fluid heat dissipation passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 7
Device, which is characterized in that the working medium entrances, sender property outlet pass through importing and export that tube of metal,drainage carries out heat radiation working medium.
9. a kind of microchannel passed through for the leakage of anti-heat radiation working medium and chip conducting wire according to claim 1-8
Fluid radiator, which is characterized in that the heat radiation working medium be deionized water or containing the aqueous solution of nano-metal particle or other
The solution of deionized water thermal conductivity when thermal conductivity is higher than 293K.
10. it is according to claim 1-8 it is a kind of passed through for the leakage of anti-heat radiation working medium and chip conducting wire it is micro- logical
Road fluid radiator, which is characterized in that the material of the metal flow passage structure is one or more of copper, iron, silver-colored aluminium, zinc
Metal.
11. it is according to claim 1-8 it is a kind of passed through for the leakage of anti-heat radiation working medium and chip conducting wire it is micro- logical
Road fluid radiator, which is characterized in that the metal flow passage structure runs through entire radiator.
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| CN107256850B (en) * | 2017-07-25 | 2023-03-31 | 厦门大学 | Adapter plate embedded with metal micro-channel and preparation method thereof |
| CN109770438B (en) * | 2019-03-25 | 2023-07-25 | 云南中烟工业有限责任公司 | Film-coated silicon-based electronic cigarette atomization chip and preparation method thereof |
| CN110707059B (en) * | 2019-09-26 | 2020-12-22 | 上海交通大学 | Multi-dimensional mesh-shaped mixed micro-channel fluid radiator |
| CN111415915B (en) * | 2020-04-30 | 2022-07-12 | 西安交通大学 | Heat radiation structure of micro-channel radiator |
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| US20030210525A1 (en) * | 2002-05-07 | 2003-11-13 | Chao-Tsai Chung | Side-exhaust heat dissipation module |
| US20050173878A1 (en) * | 2004-02-05 | 2005-08-11 | Gilbert Bobby Espejo | Transportable shopping cart |
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| US20010003302A1 (en) * | 1996-06-27 | 2001-06-14 | Kaveh Azar | Narrow channel heat sink with tapered fins |
| US20030210525A1 (en) * | 2002-05-07 | 2003-11-13 | Chao-Tsai Chung | Side-exhaust heat dissipation module |
| US20050173878A1 (en) * | 2004-02-05 | 2005-08-11 | Gilbert Bobby Espejo | Transportable shopping cart |
| US20070125518A1 (en) * | 2005-12-01 | 2007-06-07 | General Electric Company | Heat sink assembly |
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