CN105679670A - Method for reducing parasitic capacitances of gate of millimeter-wave AlGaN/GaN HEMT - Google Patents
Method for reducing parasitic capacitances of gate of millimeter-wave AlGaN/GaN HEMT Download PDFInfo
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- CN105679670A CN105679670A CN201610158793.9A CN201610158793A CN105679670A CN 105679670 A CN105679670 A CN 105679670A CN 201610158793 A CN201610158793 A CN 201610158793A CN 105679670 A CN105679670 A CN 105679670A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 21
- 230000003071 parasitic effect Effects 0.000 title abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 239000003990 capacitor Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000003628 erosive effect Effects 0.000 claims description 14
- 230000009467 reduction Effects 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract 5
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000002609 medium Substances 0.000 description 41
- 239000012530 fluid Substances 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 241000208340 Araliaceae Species 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- 238000000276 deep-ultraviolet lithography Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
- 239000001963 growth medium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention provides a method for reducing parasitic capacitances of a gate of a millimeter-wave AlGaN/GaN HEMT. The main structure of a microwave millimeter wave chip comprises an SiC substrate, an epitaxial channel, a barrier layer, a source-drain electrode and a T-shaped gate, wherein the T-shaped gate structure is prepared by once molding of electronic beams; and the method for reducing the gate parasitic capacitance of the millimeter-wave AlGaN/GaN HEMT comprises the steps as follows: a gate metal is stripped; a gate structure is passivated; the passivated compact dielectric has BOE solution corrosion resistance characteristic; capacitive dielectrics are grown; the gate is exposed while a capacitor structure is protected by gum by a photolithography technique; the capacitive dielectric is corroded by a BOE solution; and the capacitive dielectrics at two sides of the gate are eliminated and the passivated dielectric is reserved by controlling time. With different dielectrics as passivated and capacitive dielectrics, the parasitic capacitances at two sides of the gate are selectively eliminated. According to the method, with a high-temperature SiN dielectric with high density for gate passivation and a low-temperature SiN dielectric with low density as the capacitance, the capacitive dielectrics at two sides of the gate are eliminated by virtue of the BOE corrosion rate difference between the dielectric for gate passivation and the dielectric as the capacitance to reduce the parasitic capacitances of the gate.
Description
Technical field
The present invention relates to grid preparation technology, particularly relate to a kind of method reducing millimeter wave AlGaN/GaNHEMT grid stray capacitance.
Background technology
Three generations's semi-conductor has broad application prospects in the high frequency field of microwave and millimeter wave chip. Millimeter wave GaNHEMT device has operating voltage height, and output rating can reach more than watt level, and power density height and operating frequency can reach the advantages such as 100GHz. And the main technique bottleneck restricting high-frequency element development is the parasitic problem with little size grid. The grid technique preparation of current GaN millimeter H EMT device is commonly the T-shape grid based on electron-beam direct writing or " Y " type grid. And prepare T-shape grid or the grid technique of " Y " type grid, what generally adopt is naked grid technique. So-called naked grid technique refers to, not growth medium before grid evaporation of metal, directly obtains glue-type by electron-beam direct writing or deep-UV lithography on epitaxial material, after grid evaporation of metal, glue-type is converted into grid-type, and stripping obtains metal gate. For GaN device, the ohmic alloy metal adopted due to its source and drain is TiAlNiAu, and this metal system can not be exposed in air and water for a long time due to the oxidizable characteristic of Al and Ni. So directly adopting naked grid technique and not being suitable for the preparation of GaNHEMT device. In addition, naked grid technique itself has certain deficiency: naked grid structure does not have medium to assist in grid moulding process, peels off easily grid, and subsequent technique stability is not high. For GaN material, it is necessary to source and drain metal protection before grid technique, generally, the method for employing is growth one layer of medium. In addition, due to the feature of naked grid existence and stability difference, it is necessary to it is carried out passivation protection. For the chip preparation with MMIC monolithic, generally also need growth capacitor dielectric. Wherein the dielectric passivation of grid both sides is grill-protected stability, and unnecessary capacitor dielectric then adds the effect of grid stray capacitance, is unfavorable for that the high frequency characteristics of millimetric wave device improves.Another passivation is then adopt the BCB medium of low-k as passivation, and it can ensure that grid both sides have less stray capacitance, but BCB medium has bigger lossy microwave angle, is unfavorable for that the high frequency characteristics of millimetric wave device improves equally.
The device that live width is bigger adopts another kind of medium to assist grid technique. The auxiliary grid technique of medium refers to, before photoetching grid pin figure, grown medium bottom epitaxial material, utilizes etching means to be etched by grid pin, has had dielectric support just can strengthen its stability during so follow-up grid evaporation of metal. And for the auxiliary grid-type of medium, its deficiency is: thicker medium brings bigger stray capacitance, because there is the problem such as line width loss and alignment in dielectric etch simultaneously, causes the auxiliary shaping preparation of grid of medium to complete. For the GaNHEMT device of millimeter wave, the technique of most critical reduces gate-source parasitic capacitance Cgs exactly, and medium auxiliary process exactly makes it increase, therefore medium auxiliary process is not suitable for and millimeter wave GaNHEMT device. And derive, from the auxiliary grid technique of medium, the folded grid technique and refer to: crossing deep-UV lithography by electron-beam direct writing on epitaxial material obtains little live width figure, evaporates thinner grid metal, and now grid have good stability; Protected by growth medium again, utilize alignment and etching technics that thin grid metallic upper surface is exposed, then double evaporation-cooling grid metal is improved grid height. For folded grid technique, its deficiency is: 1. steaming grid technique for two times and add third photo etching or the electron-beam direct writing technique time etching technics that adds, step complexity brings the raising of technique cost; 2. photoetching or this step of electron-beam direct writing dielectric etch are difficult to ensure alignment, especially for little size grid; 3. folded grid technique dielectric passivation glue is thick, and corresponding stray capacitance can be bigger.
In sum, single T-shape grid or " Y " type grid technique for the millimeter wave GaNHEMT device under high frequency, Shortcomings. So, for millimetric wave device, it is necessary to current grid parasitism is optimized. Developing a kind of technique with little size grid stability and low parasitic capacitance, not only raising high-frequency element performance is had help, simultaneously also to the yield rate of little size grid, reliability has help.
Summary of the invention
It is an object of the invention to provide a kind of method reducing millimeter wave AlGaN/GaNHEMT grid stray capacitance, it is possible to reduce the stray capacitance of little size grid and improve the stability of grid.
In order to solve the problem, the present invention can adopt following technical scheme:
A kind of method reducing millimeter wave AlGaN/GaNHEMT grid stray capacitance, on the epitaxial material of described millimeter wave chip, growth has medium, described medium comprises SiC substrate, epi channels, barrier layer, source-drain electrode and T-shaped grid, described T-shaped grid structure adopts electron beam once shaped preparation, the method of described reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance comprises the following steps: peel off grid metal, grid structure is carried out passivation, and the compact medium of passivation has resistance to BOE (bufferoxideetcher) solution corrosion characteristic; Growth capacitor dielectric; Grid come out and capacitance structure is protected by glue to adopt photoetching process to make; Utilizing BOE solution to be corroded by capacitor dielectric, the period removes the capacitor dielectric of grid both sides and retains dielectric passivation.
Compared with prior art, the application has following useful effect: the application utilizes BOE corrosive fluid that the erosion rate difference of different density medium is carried out selective corrosion, grid passivation adopts fine and close SiN medium parcel, capacitor dielectric adopts relatively loose SiN medium, utilize the high selectivity of the erosion rate of BOE, make dielectric passivation as the self-stopping technology layer of corrosive fluid, in conjunction with photoetching process, effectively remove the partial capacity medium under grid both sides, reduce the stray capacitance of millimeter wave AlGaN/GaNHEMT thus promote its high frequency characteristics.
Accompanying drawing explanation
Fig. 1 is the schematic diagram preparing source-drain electrode and T-shaped grid on epitaxial film of the present invention;
Fig. 2 is that the present invention adopts compact medium that grid are carried out passivation schematic cross-section;
Fig. 3 is that the present invention grows grid schematic cross-section after loose capacitor dielectric;
Fig. 4 protects other parts only to make grid expose schematic diagram after photoetching of the present invention;
Fig. 5 is the schematic diagram after the capacitor dielectric of grid both sides is removed in selective corrosion of the present invention.
Embodiment
Ginseng Fig. 1, the application discloses a kind of method reducing millimeter wave AlGaN/GaNHEMT grid stray capacitance, on the epitaxial material 105 of described microwave and millimeter wave chip, growth has medium, described medium comprises SiC substrate 101, epi channels, barrier layer 102, source-drain electrode 103 and T-shaped grid 104, and described T-shaped grid 104 adopt electron beam once shaped to prepare.
Ginseng Fig. 2, the method of described reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance comprises the following steps: peel off grid metal, grid structure utilize the good compact medium 202 of isotropy carry out passivation, compact medium 202 thinner thickness of passivation and the compact medium 202 of passivation have very low BOE erosion rate, the BOE erosion rate of the compact medium 202 of passivation is in the deionized water of specific proportioning and BOE etchant solution, erosion rate is less than 10nm/min, the compact medium 202 of passivation can be used as the self-stopping technology layer of BOE solution, thus make corrosive fluid can not erode to grid metal and GaN epitaxy material. the growth of compact medium can be SiN or SiO of high growth temperature2Medium, it is also possible to be the medium such as SiN adopting ICP growth. As high growth temperature SiN medium carry out grid passivation time, growth under the high temperature of 300 DEG C or more, the thickness of growth SiN medium is at about 50nm.
After grid metal-stripping and passivation, growth capacitor dielectric, after grid passivation, capacitor dielectric grows under can adopting the low temperature being less than 200 DEG C, the deionized water of the BOE erosion rate of the medium under low-temperature epitaxy proportioning relatively same as described above and the solution of BOE corrosive fluid proportioning have higher erosion rate, generally can be greater than 100nm/min. Follow-up passive processes needs to prepare electric capacity thus grows capacitor dielectric, and as shown in Figure 3, the medium that low-temperature epitaxy relatively loosens is as capacitor dielectric, and for ensureing higher electric capacity voltage breakdown, it is thicker that capacitor dielectric need to grow.
Grid come out and capacitance structure is protected by glue to adopt photoetching process to make; Utilizing BOE solution to be corroded by capacitor dielectric, the period removes the capacitor dielectric of grid both sides and retains dielectric passivation.
Low temperature porous medium has the specific inductivity basically identical with high temperature compact medium, thus makes the demand that it meets capacitor dielectric. But low temperature porous medium has again very fast BOE erosion rate so that it is be easily removed. As shown in Figure 4, grid come out and capacitance structure is protected by glue to adopt photoetching process to make after growth capacitor dielectric. BOE solution is utilized to corrode. Owing to capacitor dielectric is corroded very soon, dielectric passivation is not easily corroded, therefore only needs the period can not remove the capacitor dielectric of grid both sides and retain dielectric passivation. Just the stability height grid structure that stray capacitance is little simultaneously is obtained, as shown in Figure 5 by the loose capacitor dielectric around corrosion grid.
The preparation technology of this kind of millimeter wave AlGaN/GaNHEMT device disclosed in this invention, different media is done passivation and capacitor dielectric, such that it is able to the stray capacitance of optionally place to go grid both sides, the high temperature SiN medium that the method density is high does grid passivation, the low temperature SiN medium utilizing density low does electric capacity, the capacitor dielectric of the BOE erosion rate difference removal grid both sides done grid passivation and do electric capacity is relied on to reduce grid stray capacitance, and twice medium growth and selective corrosion in the application, grid stray capacitance can be effectively reduced thus improve device high frequency characteristics.
In addition, the specific implementation method and access of the present invention is a lot, and the above is only the preferred embodiment of the present invention. , it is also possible to make some improvements and modifications, it is noted that for those skilled in the art, under the premise without departing from the principles of the invention these improvements and modifications also should be considered as protection scope of the present invention. The all available prior art of each integral part not clear and definite in the present embodiment is realized.
Claims (8)
1. one kind reduces the method for millimeter wave AlGaN/GaNHEMT grid stray capacitance, on the epitaxial material of described millimeter wave chip, growth has medium, described medium comprises SiC substrate, epi channels, barrier layer, source-drain electrode and T-shaped grid, described T-shaped grid structure adopts electron beam once shaped preparation, it is characterised in that: the method for described reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance comprises the following steps:
1), peeling off grid metal, grid structure is carried out passivation, the compact medium of passivation has the solution corrosion of resistance to BOE characteristic;
2), capacitor dielectric is grown;
3) grid come out and capacitance structure is protected by glue, to adopt photoetching process to make;
4), utilizing BOE solution to be corroded by capacitor dielectric, the period removes the capacitor dielectric of grid both sides and retains dielectric passivation.
2. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 1, it is characterised in that: compact medium can be SiN or SiO2Medium, it is also possible to be the SiN medium adopting ICP growth.
3. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 1, it is characterised in that: the compact medium of passivation is as the self-stopping technology layer of BOE solution.
4. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 3, it is characterized in that: do the compact medium of grid passivation by control and do the BOE erosion rate difference of the capacitor dielectric of electric capacity, and remove the capacitor dielectric of grid both sides, to reduce grid stray capacitance.
5. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 4, it is characterised in that: during grid passivation, growing SiN medium at the temperature more than 300 DEG C, the thickness of growth SiN medium is at 50nm.
6. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 5, it is characterised in that: the BOE erosion rate of compact medium doing grid passivation is for the deionized water of specific proportioning and BOE solution, and erosion rate is less than 10nm/min.
7. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 6, it is characterised in that: after grid passivation, capacitor dielectric adopts the temperature growth being less than 200 DEG C.
8. the method for reduction millimeter wave AlGaN/GaNHEMT grid stray capacitance according to claim 1, it is characterised in that: the BOE erosion rate of capacitor dielectric doing electric capacity is for the deionized water of specific proportioning and BOE solution, and erosion rate is greater than 100nm/min.
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| CN201610158793.9A CN105679670B (en) | 2016-03-18 | 2016-03-18 | Method for reducing parasitic capacitance of gate of millimeter wave AlGaN/GaN HEMT |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910371A (en) * | 2017-09-21 | 2018-04-13 | 中国电子科技集团公司第五十五研究所 | A kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds |
| CN112420821A (en) * | 2020-10-29 | 2021-02-26 | 北京元芯碳基集成电路研究院 | Y-shaped gate structure based on carbon-based material and preparation method thereof |
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| JPH05218100A (en) * | 1992-01-31 | 1993-08-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| CN102280476A (en) * | 2011-08-08 | 2011-12-14 | 中国电子科技集团公司第五十五研究所 | Pseudomorphic high electron mobility transistor and manufacturing method thereof |
| CN102299071A (en) * | 2010-06-23 | 2011-12-28 | 中国科学院微电子研究所 | Method for improving frequency characteristics of AlGaN (aluminum-gallium-nitrogen)/GaN (gallium-nitrogen) HEMTs (high electron mobility transistors) |
| CN103887335A (en) * | 2014-02-25 | 2014-06-25 | 中国电子科技集团公司第五十五研究所 | Pseudomorphic high electron mobility transistor and manufacture method for improving frequency characteristic |
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2016
- 2016-03-18 CN CN201610158793.9A patent/CN105679670B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05218100A (en) * | 1992-01-31 | 1993-08-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| CN102299071A (en) * | 2010-06-23 | 2011-12-28 | 中国科学院微电子研究所 | Method for improving frequency characteristics of AlGaN (aluminum-gallium-nitrogen)/GaN (gallium-nitrogen) HEMTs (high electron mobility transistors) |
| CN102280476A (en) * | 2011-08-08 | 2011-12-14 | 中国电子科技集团公司第五十五研究所 | Pseudomorphic high electron mobility transistor and manufacturing method thereof |
| CN103887335A (en) * | 2014-02-25 | 2014-06-25 | 中国电子科技集团公司第五十五研究所 | Pseudomorphic high electron mobility transistor and manufacture method for improving frequency characteristic |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910371A (en) * | 2017-09-21 | 2018-04-13 | 中国电子科技集团公司第五十五研究所 | A kind of method of improvement GaN HEMT surface electronic beam direct write charge accumulateds |
| CN112420821A (en) * | 2020-10-29 | 2021-02-26 | 北京元芯碳基集成电路研究院 | Y-shaped gate structure based on carbon-based material and preparation method thereof |
| CN112420821B (en) * | 2020-10-29 | 2021-11-19 | 北京元芯碳基集成电路研究院 | Y-shaped gate structure based on carbon-based material and preparation method thereof |
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