CN105675955B - A kind of zero-power voltage detecting circuit - Google Patents
A kind of zero-power voltage detecting circuit Download PDFInfo
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- CN105675955B CN105675955B CN201610039075.XA CN201610039075A CN105675955B CN 105675955 B CN105675955 B CN 105675955B CN 201610039075 A CN201610039075 A CN 201610039075A CN 105675955 B CN105675955 B CN 105675955B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
Abstract
The invention discloses a kind of zero-power voltage detecting circuits, the circuit is to detect the variation of input supply voltage using the detection circuit of multiple metal-oxide-semiconductors and phaselocked loop composition, and the work of detection circuit can be stopped after the working power that supply voltage reaches integrated circuit, to reach the function of zero-power；The delay circuit of input terminal setting further meets the requirement that integrated circuit works when power supply reaches operating voltage.
Description
Technical field
The invention belongs to the voltage detection circuit technical fields in integrated circuit, more particularly, to a kind of zero power power consumption
Press detection circuit.
Background technology
Currently, moment of the integrated circuit in energization, not up to integrated in supply voltage due to the delay of power boost
When the operating voltage of circuit, the integrated circuit situation that may start to work not only cannot be guaranteed the normal work of integrated circuit
But also integrated circuit can be damaged, need setting one for detecting the circuit of supply voltage, in the prior art compared with
Judgement sampling is carried out frequently with circuit structure as shown in Figure 1, due to there is voltage always on the Vref of circuit, so with collection
There is power consumption always at circuit work, this causes the waste of resource, and increases and affect the cost of integrated circuit and make
With.
Invention content
To solve the problems, such as that the deficiencies in the prior art, the present invention provide a kind of zero-power voltage detecting circuit, the electricity
Road is the detection circuit that is formed using multiple metal-oxide-semiconductors and phaselocked loop to detect the variation of input supply voltage, and can be in power supply
Voltage reaches the work for stopping detection circuit after the working power of integrated circuit, to reach the function of zero-power；Input terminal
The delay circuit of setting further meets integrated circuit and reaches the requirement that operating voltage is work in power supply.
A kind of zero-power voltage detecting circuit, including power input, output end, ground terminal and voltage delay detection electricity
Road, the voltage delay detection circuit includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor
And phase lock circuitry；The grid of first metal-oxide-semiconductor connect circuit output end, the first metal-oxide-semiconductor source electrode connection electricity with the grid of the 4th metal-oxide-semiconductor
Source input terminal, the drain electrode of drain electrode the second metal-oxide-semiconductor of connection of the first metal-oxide-semiconductor；The source electrode of second metal-oxide-semiconductor connects ground terminal, the 2nd MOS
The grid of the grid connection third metal-oxide-semiconductor of pipe；The source electrode of third metal-oxide-semiconductor connects ground terminal, the grid of drain electrode the 5th metal-oxide-semiconductor of connection
Pole；The source electrode and drain electrode of 5th metal-oxide-semiconductor connects power input, and the source electrode and drain electrode of the 4th metal-oxide-semiconductor connects ground terminal；Locking phase electricity
Road includes the first phase inverter and the second phase inverter, and the output end of the input terminal of the first phase inverter and the second phase inverter is separately connected the
Between the grid and the drain electrode of third metal-oxide-semiconductor of five metal-oxide-semiconductors, the input terminal of the output end of the first phase inverter and the second phase inverter is distinguished
It is connected between the grid and the grid of the 4th metal-oxide-semiconductor of first metal-oxide-semiconductor.
Preferably, first metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are PMOS tube, second metal-oxide-semiconductor, the 3rd MOS
Pipe and the 4th metal-oxide-semiconductor are NMOS tubes.
Preferably, the first adjunct circuit is connected between the grid and source electrode of first metal-oxide-semiconductor, the first adjunct circuit is extremely
One PMOS tube of few parallel connection.
Preferably, the second adjunct circuit is connected between the grid and source electrode of the third metal-oxide-semiconductor, the second adjunct circuit is extremely
One NMOS tube of few parallel connection.
Preferably, the output end is connected with delay circuit, and delay circuit includes the third phase inverter being serially connected, the 4th
Phase inverter and the 5th phase inverter.
A kind of zero-power voltage detecting circuit of the present invention is the detection electricity formed using multiple metal-oxide-semiconductors and phaselocked loop
The variation of input supply voltage is detected on road, and can stop detection electricity after the working power that supply voltage reaches integrated circuit
The work on road, to reach the function of zero-power；The delay circuit of input terminal setting further meets integrated circuit and exists
Power supply reaches the requirement that operating voltage is work.
Description of the drawings
Fig. 1 is the circuit diagram that voltage compares sample circuit in the prior art.
Fig. 2 is the circuit diagram of the zero-power voltage detecting circuit of the present invention.
Specific implementation mode
As follows in conjunction with attached drawing, application scheme is further described：
As shown in Fig. 2, a kind of zero-power voltage detecting circuit, including power input Vcc, output end vo ut, ground terminal
Vgnd and voltage delay detection circuit, the voltage delay detection circuit includes the first metal-oxide-semiconductor N1, the second metal-oxide-semiconductor N2, third
Metal-oxide-semiconductor N3, the 4th metal-oxide-semiconductor N4, the 5th metal-oxide-semiconductor N5 and phase lock circuitry.
The grid of first metal-oxide-semiconductor N1 connect circuit output end Vout, the first sources metal-oxide-semiconductor N1 with the grid of the 4th metal-oxide-semiconductor N4
Pole connects the drain electrode of the second metal-oxide-semiconductor N2 of drain electrode connection of power input Vcc, the first metal-oxide-semiconductor N1；The source electrode of second metal-oxide-semiconductor N2
Connect the grid of the grid connection third metal-oxide-semiconductor N3 of ground terminal Vgnd, the second metal-oxide-semiconductor N2；The source electrode of third metal-oxide-semiconductor N3 connects
Ground terminal Vgnd, the grid of the 5th metal-oxide-semiconductor N5 of drain electrode connection；The source electrode and drain electrode of 5th metal-oxide-semiconductor N5 connects power input
The source electrode and drain electrode connection ground terminal Vgnd of Vcc, the 4th metal-oxide-semiconductor N4；The first metal-oxide-semiconductor N1 and the described 5th in the present embodiment
Metal-oxide-semiconductor N5 is PMOS tube, and the second metal-oxide-semiconductor N2, third metal-oxide-semiconductor N3 and the 4th metal-oxide-semiconductor N4 are NMOS tubes.
Phase lock circuitry includes the first phase inverter D1 and the second phase inverter D2, and the input terminal 11 of the first phase inverter D1 and second is instead
The output end 22 of phase device D2 is connected between the grid of the 5th metal-oxide-semiconductor N5 and the drain electrode of third metal-oxide-semiconductor N3, the first phase inverter
The input terminal 21 of the output end 12 of D1 and the second phase inverter D2 are connected to the grid and the 4th MOS of the first metal-oxide-semiconductor N1
Between the grid of pipe N4.
Further, the first metal-oxide-semiconductor N1 causes circuit that can not work due to failure in order to prevent, the first metal-oxide-semiconductor N1
Grid and source electrode between be connected with the first adjunct circuit, the first adjunct circuit PMOS tube at least in parallel, in the present embodiment
The first adjunct circuit include two concatenated PMOS tube N11 and N12.
Further, third metal-oxide-semiconductor N3 causes circuit that can not work due to failure in order to prevent, the 3rd MOS
The second adjunct circuit, the second adjunct circuit NMOS tube at least in parallel, this implementation are connected between the grid and source electrode of pipe N3
The second adjunct circuit in example includes two concatenated NMOS tube N31 and N32.
Further, in order to meet the requirement that integrated circuit works when power supply reaches operating voltage, the output end
Vout is connected with delay circuit, and delay circuit includes third phase inverter D3, the 4th phase inverter D4 and the 5th reverse phase being serially connected
Device D5.
A kind of zero-power voltage detecting circuit of the present invention is the detection electricity formed using multiple metal-oxide-semiconductors and phaselocked loop
The variation of input supply voltage is detected on road, and can stop detection electricity after the working power that supply voltage reaches integrated circuit
The work on road, to reach the function of zero-power；The delay circuit of input terminal setting further meets integrated circuit and exists
Power supply reaches the requirement that operating voltage is work.
It is that above-mentioned preferred embodiment should be regarded as application scheme embodiment for example, all with application scheme thunder
Technology deduction, replacement, improvement etc. same, approximate or make based on this, are regarded as the protection domain of this patent.
Claims (5)
1. a kind of zero-power voltage detecting circuit, including power input, output end, ground terminal and voltage delay detection circuit,
It is characterized in that：Voltage delay detection circuit includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the
Five metal-oxide-semiconductors and phase lock circuitry；The grid of first metal-oxide-semiconductor connect circuit output end, the first metal-oxide-semiconductor source with the grid of the 4th metal-oxide-semiconductor
Pole connects power input, the drain electrode of drain electrode the second metal-oxide-semiconductor of connection of the first metal-oxide-semiconductor；The source electrode connection ground connection of second metal-oxide-semiconductor
End, the grid of the grid connection third metal-oxide-semiconductor of the second metal-oxide-semiconductor；The source electrode of third metal-oxide-semiconductor connects ground terminal, drain electrode connection the
The grid of five metal-oxide-semiconductors；The source electrode and drain electrode of 5th metal-oxide-semiconductor connects power input, and the source electrode and drain electrode of the 4th metal-oxide-semiconductor connects
Ground terminal；Phase lock circuitry includes the first phase inverter and the second phase inverter, the output of the input terminal of the first phase inverter and the second phase inverter
End is separately connected between the grid and the drain electrode of third metal-oxide-semiconductor of the 5th metal-oxide-semiconductor, the output end of the first phase inverter and the second phase inverter
Input terminal be connected between the grid and the grid of the 4th metal-oxide-semiconductor of first metal-oxide-semiconductor.
2. a kind of zero-power voltage detecting circuit according to claim 1, it is characterised in that：First metal-oxide-semiconductor and institute
It is PMOS tube to state the 5th metal-oxide-semiconductor, and second metal-oxide-semiconductor, the third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor are NMOS tubes.
3. a kind of zero-power voltage detecting circuit according to claim 2, it is characterised in that：The grid of first metal-oxide-semiconductor
The first adjunct circuit, the first adjunct circuit PMOS tube at least in parallel are connected between pole and source electrode.
4. a kind of zero-power voltage detecting circuit according to claim 2, it is characterised in that：The grid of the third metal-oxide-semiconductor
The second adjunct circuit, the second adjunct circuit NMOS tube at least in parallel are connected between pole and source electrode.
5. a kind of zero-power voltage detecting circuit according to claim 3 or 4, it is characterised in that：The output end connection
It includes the third phase inverter, the 4th phase inverter and the 5th phase inverter being serially connected to have delay circuit, delay circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039075.XA CN105675955B (en) | 2016-01-21 | 2016-01-21 | A kind of zero-power voltage detecting circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610039075.XA CN105675955B (en) | 2016-01-21 | 2016-01-21 | A kind of zero-power voltage detecting circuit |
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| CN105675955A CN105675955A (en) | 2016-06-15 |
| CN105675955B true CN105675955B (en) | 2018-08-10 |
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| CN201610039075.XA Active CN105675955B (en) | 2016-01-21 | 2016-01-21 | A kind of zero-power voltage detecting circuit |
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| CN102710242A (en) * | 2012-06-17 | 2012-10-03 | 湖南华宽通电子科技有限公司 | On-chip power-on reset detection circuit applied to high-frequency phase locked loop (PLL) |
| CN103716023A (en) * | 2013-12-03 | 2014-04-09 | 北京中电华大电子设计有限责任公司 | Power-on reset circuit with ultra-low power consumption |
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| CN104253529A (en) * | 2013-06-25 | 2014-12-31 | 无锡华润上华半导体有限公司 | Starting circuit of power supply management chip and power supply management chip |
| CN204190734U (en) * | 2014-11-05 | 2015-03-04 | 百利通科技（扬州）有限公司 | A kind of electrify restoration circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007012993A2 (en) * | 2005-07-28 | 2007-02-01 | Koninklijke Philips Electronics N.V. | Transistor bulk control for compensating frequency and/or process variations |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101414748A (en) * | 2007-10-19 | 2009-04-22 | 深圳迈瑞生物医疗电子股份有限公司 | Method for starting control circuit and protecting power supply control chip |
| CN101499644A (en) * | 2008-02-02 | 2009-08-05 | 华润矽威科技（上海）有限公司 | Under-voltage protection circuit with low starting current |
| CN201345613Y (en) * | 2008-12-18 | 2009-11-11 | 比亚迪股份有限公司 | Voltage adjusting device for load starting |
| CN202142841U (en) * | 2011-06-24 | 2012-02-08 | 广州市君盘实业有限公司 | Switch power supply output short circuit protective circuit |
| CN102710242A (en) * | 2012-06-17 | 2012-10-03 | 湖南华宽通电子科技有限公司 | On-chip power-on reset detection circuit applied to high-frequency phase locked loop (PLL) |
| CN104122971A (en) * | 2013-04-29 | 2014-10-29 | 鸿富锦精密电子(天津)有限公司 | Power circuit |
| CN104253529A (en) * | 2013-06-25 | 2014-12-31 | 无锡华润上华半导体有限公司 | Starting circuit of power supply management chip and power supply management chip |
| CN103716023A (en) * | 2013-12-03 | 2014-04-09 | 北京中电华大电子设计有限责任公司 | Power-on reset circuit with ultra-low power consumption |
| CN204190734U (en) * | 2014-11-05 | 2015-03-04 | 百利通科技（扬州）有限公司 | A kind of electrify restoration circuit |
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| CN105675955A (en) | 2016-06-15 |
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